CN102856465B - Light emitting diode packaging structure - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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Abstract
Description
技术领域 technical field
本发明涉及一种半导体结构，尤其涉及一种发光二极管封装结构。 The invention relates to a semiconductor structure, in particular to a light emitting diode packaging structure.
背景技术 Background technique
发光二极管(Light Emitting Diode，LED)封装结构的制作通常是先在一个树脂或塑料的基板上形成电路结构，然后将发光二极管芯片固定于基板上并与电路结构电性连接，最后形成封装层覆盖发光二极管芯片并切割形成多个封装后的发光二极管。 The manufacture of light emitting diode (Light Emitting Diode, LED) packaging structure is usually to form a circuit structure on a resin or plastic substrate, then fix the light emitting diode chip on the substrate and electrically connect with the circuit structure, and finally form the packaging layer covering The light emitting diode chip is cut to form a plurality of packaged light emitting diodes.
然而，发光二极管芯片工作时会产生大量热量，会对发光二极管的寿命造成较大影响，因此如何将发光二极管芯片产生的热量快速有效的消散是业界一直努力解决的课题。 However, a large amount of heat is generated when the LED chip is in operation, which will greatly affect the life of the LED. Therefore, how to quickly and effectively dissipate the heat generated by the LED chip is a subject that the industry has been working hard to solve.
发明内容 Contents of the invention
有鉴于此，有必要提供一种具有良好散热效率的发光二极管封装结构。 In view of this, it is necessary to provide a light emitting diode packaging structure with good heat dissipation efficiency.
一种发光二极管封装结构，包括基板、形成于基板上的电极、固定于基板上并与电极电性连接的发光二极管芯片及覆盖发光二极管芯片于基板上的封装层，所述封装层内分布有散热颗粒，所述散热颗粒包括碳纳米颗粒和包覆该碳纳米颗粒于内的类钻石膜。 A light-emitting diode packaging structure, including a substrate, electrodes formed on the substrate, a light-emitting diode chip fixed on the substrate and electrically connected to the electrodes, and an encapsulation layer covering the light-emitting diode chip on the substrate. The encapsulation layer is distributed with Heat dissipation particles, the heat dissipation particles include carbon nanoparticles and a diamond-like film covering the carbon nanoparticles.
在碳纳米颗粒的外表面附着一层类钻石膜，并将其均匀填充于封装层中，因为纳米碳和类钻石均具有很高的导热性能，因此能够促使封装层的导热性能提高，使发光二极管芯片产生的热量较为快速的传导至封装结构的外部，有助于散热，从而延长发光二极管封装结构的使用寿命。 Attach a layer of diamond-like film on the outer surface of carbon nanoparticles, and fill it evenly in the encapsulation layer, because both nano-carbon and diamond-like film have high thermal conductivity, so it can improve the thermal conductivity of the encapsulation layer and make the luminescence The heat generated by the diode chip is conducted to the outside of the package structure relatively quickly, which is helpful for heat dissipation, thereby prolonging the service life of the package structure of the light emitting diode.
下面参照附图，结合具体实施例对本发明作进一步的描述。 The present invention will be further described below in conjunction with specific embodiments with reference to the accompanying drawings.
附图说明 Description of drawings
图1为本发明第一实施例的发光二极管封装结构的剖面示意图。 FIG. 1 is a schematic cross-sectional view of a light emitting diode package structure according to a first embodiment of the present invention.
图2为本发明第二实施例的发光二极管封装结构的剖面示意图。 FIG. 2 is a schematic cross-sectional view of a light emitting diode packaging structure according to a second embodiment of the present invention.
图3为本发明第三实施例的发光二极管封装结构的剖面示意图。 FIG. 3 is a schematic cross-sectional view of a light emitting diode package structure according to a third embodiment of the present invention.
主要元件符号说明 Description of main component symbols
如下具体实施方式将结合上述附图进一步说明本发明。 The following specific embodiments will further illustrate the present invention in conjunction with the above-mentioned drawings.
具体实施方式 Detailed ways
请参见图1，本发明第一实施例提供的发光二极管封装结构10，其包括基板11、电极12、固定于基板11上并与电极12电性连接的发光二极管芯片13、及覆盖发光二极管芯片13的封装层14。 Please refer to FIG. 1, the light emitting diode package structure 10 provided by the first embodiment of the present invention includes a substrate 11, an electrode 12, a light emitting diode chip 13 fixed on the substrate 11 and electrically connected to the electrode 12, and a covering light emitting diode chip 13 encapsulation layer 14.
该基板11大致呈矩形平板状，该基板11包括上表面111、与上表面111相对的下表面112以及连接该上表面111和下表面112的若干侧面113。所述上表面111和下表面112均为平面，该上表面111用于承载发光二极管芯片13。 The substrate 11 is substantially in the shape of a rectangular plate. The substrate 11 includes an upper surface 111 , a lower surface 112 opposite to the upper surface 111 , and several side surfaces 113 connecting the upper surface 111 and the lower surface 112 . Both the upper surface 111 and the lower surface 112 are plane, and the upper surface 111 is used to carry the LED chip 13 .
所述电极12形成于基板11上。所述电极12至少为两个，分别为第一电极121和第二电极122。所述第一电极121与第二电极122间隔设置，从而电性绝缘。所述第一电极121与第二电极122分别自基板11的上表面111的中部向相反方向延伸，并经过基板11的相对两侧面113绕行至下表面112。该电极12采用金属材料制作，例如铜、金或合金等。所述第一电极121与第二电极122的截面大致呈U形。 The electrodes 12 are formed on the substrate 11 . There are at least two electrodes 12 , namely a first electrode 121 and a second electrode 122 . The first electrode 121 is spaced apart from the second electrode 122 so as to be electrically insulated. The first electrodes 121 and the second electrodes 122 respectively extend from the middle of the upper surface 111 of the substrate 11 in opposite directions, and detour to the lower surface 112 through opposite side surfaces 113 of the substrate 11 . The electrodes 12 are made of metal materials, such as copper, gold or alloys. Sections of the first electrode 121 and the second electrode 122 are substantially U-shaped.
所述发光二极管芯片13装设于基板11上。具体的，该发光二极管芯片13可直接固定于其中一个电极12上。在本实施例中，该发光二极管芯片13固定于第一电极121上，并采用导线131将该发光二极管芯片13的电极分别与第一电极121与第二电极122打线连接。具体实施时，该发光二极管芯片13的数量根据不同需求可以为一个或者多个。在本实施例中，所述发光二极管芯片13的数量为一个。该发光二极管芯片13可采用蓝光芯片或黄光芯片等以达到不同的设计需要。当发光二极管芯片13采用蓝光芯片时，可于该发光二极管芯片13的外表面涂覆一层黄色的荧光层132，以使蓝色的发光二极管芯片13发出的其中一部分蓝光射入荧光层132激发后于与另一部分蓝光混合从而形成白光。 The LED chips 13 are installed on the substrate 11 . Specifically, the LED chip 13 can be directly fixed on one of the electrodes 12 . In this embodiment, the LED chip 13 is fixed on the first electrode 121 , and the electrodes of the LED chip 13 are respectively connected to the first electrode 121 and the second electrode 122 by wires 131 . During specific implementation, the number of the light emitting diode chips 13 can be one or more according to different requirements. In this embodiment, the number of the LED chip 13 is one. The light-emitting diode chip 13 can be a blue light chip or a yellow light chip to meet different design requirements. When the light-emitting diode chip 13 adopts a blue chip, a yellow fluorescent layer 132 can be coated on the outer surface of the light-emitting diode chip 13, so that a part of the blue light emitted by the blue light-emitting diode chip 13 enters the fluorescent layer 132 for excitation. It is then mixed with another part of blue light to form white light.
所述封装层14覆盖所述发光二极管芯片13于基板11之上。该封装层14采用透明材料，如硅树脂、环氧树脂等材料制成。该封装层14大致呈矩形，其包括与基板11的上表面111结合的结合面141及与该结合面141相对的出光面142。该封装层14的内部均匀分布有散热颗粒15。 The encapsulation layer 14 covers the LED chip 13 on the substrate 11 . The encapsulation layer 14 is made of transparent materials, such as silicone resin, epoxy resin and other materials. The encapsulation layer 14 is substantially rectangular, and includes a bonding surface 141 bonded to the upper surface 111 of the substrate 11 and a light-emitting surface 142 opposite to the bonding surface 141 . Heat dissipation particles 15 are evenly distributed inside the encapsulation layer 14 .
所述散热颗粒15包括碳纳米颗粒151和包覆该碳纳米颗粒151于其内的类钻石膜152。每一碳纳米颗粒151由类钻石膜152包覆形成一个散热颗粒15。该类钻石膜152是由透明、高热传导性且折射率大于封装层14的折射率的材料制成。该类钻石膜152是由碳氢化合物添加一种或多种添加物形成，所述添加物选自钛（Ti）、铬（Cr）、铝（Al）、钨（Wu）、硅（Si）及氧化硅（SiO）中的一种或多种。该类钻石膜152可采用涂覆或喷涂的方式形成于碳纳米颗粒151的外表面。该碳纳米颗粒151和类钻石膜152均具有高热传导性，其均匀地分布于封装层14中，能够改善封装层14的热量聚集，使得该封装层14具有较好的散热性能，从而可以将发光二极管芯片产生的热量迅速的散发至发光二极管封装结构10之外。该散热颗粒15的整体外径通常为15nm（nanometer，纳米）至30nm之间。由于该散热颗粒15的整体外径较小，又由于包覆该碳纳米颗粒151的类钻石膜152的透光性且折射率较大，使得射向散热颗粒15的光线能够尽可能多的通过类钻石膜152折射和反射后向外射出，从而避免光线直接射向碳纳米颗粒151产生光线的损耗，由此在提高散热的同时保证发光二极管封装结构10的出光效率。本实施例中，类钻石膜152的折射率在2.0至2.4之间，所述封装层14的折射率在1.2至1.6之间。由于类钻石膜152的折射率大于封装层14的折射率，因此于该封装层14内分布所述散热颗粒15还可以提高光的萃取率。 The heat dissipation particles 15 include carbon nanoparticles 151 and a diamond-like film 152 covering the carbon nanoparticles 151 . Each carbon nanoparticle 151 is covered by a diamond-like film 152 to form a heat dissipation particle 15 . The diamond-like film 152 is made of a transparent material with high thermal conductivity and a higher refractive index than the encapsulation layer 14 . This type of diamond film 152 is formed by adding one or more additives to hydrocarbons, and the additives are selected from titanium (Ti), chromium (Cr), aluminum (Al), tungsten (Wu), silicon (Si) and one or more of silicon oxide (SiO). The diamond-like film 152 can be formed on the outer surface of the carbon nanoparticles 151 by coating or spraying. Both the carbon nanoparticle 151 and the diamond-like film 152 have high thermal conductivity, and they are evenly distributed in the encapsulation layer 14, which can improve the heat accumulation of the encapsulation layer 14, so that the encapsulation layer 14 has better heat dissipation performance, so that the encapsulation layer 14 can be The heat generated by the LED chip is quickly dissipated to the outside of the LED packaging structure 10 . The overall outer diameter of the heat dissipation particles 15 is usually between 15nm (nanometer, nanometer) and 30nm. Because the overall outer diameter of the heat dissipation particles 15 is small, and because the diamond-like film 152 covering the carbon nanoparticles 151 has a light transmittance and a large refractive index, the light rays directed at the heat dissipation particles 15 can pass through as much as possible. The diamond-like film 152 is refracted and reflected and emitted outwards, so as to avoid the loss of light caused by the light directly hitting the carbon nanoparticles 151 , thereby improving the heat dissipation and ensuring the light extraction efficiency of the LED packaging structure 10 . In this embodiment, the refractive index of the diamond-like film 152 is between 2.0 and 2.4, and the refractive index of the packaging layer 14 is between 1.2 and 1.6. Since the refractive index of the diamond-like film 152 is greater than that of the encapsulation layer 14 , distributing the heat dissipation particles 15 in the encapsulation layer 14 can also improve the light extraction rate.
上述实施例中，还可以形成一荧光层132于封装层14的上表面，从而达到改善发光二极管芯片13发出的光线的光学特性的功效。 In the above embodiment, a fluorescent layer 132 can also be formed on the upper surface of the encapsulation layer 14 , so as to achieve the effect of improving the optical characteristics of the light emitted by the LED chip 13 .
请同时参阅图2，为本发明第二实施例提供的发光二极管封装结构20，其与第一实施例的发光二极管封装结构10不同之处在于，该基板11的上表面111上还形成一环绕发光二极管芯片13在内的一反射杯25，所述封装层24填充于发射杯25内，从而覆盖该发光二极管芯片13于反射杯25的内部。该反射杯25的顶面与封装层24的顶面平齐，一荧光层232形成于所述反射杯25与封装层24的顶面上。该反射杯25是由反射性能较好的材料制成，因此，发光二极管芯片13发出的光线中部分光线经由反射杯25反射后改变原来的照射方向后向外射出，从而使得光线出射更加集中，以配合增加光强的需要。可以理解的，该反射杯25也可以不为反射材料制成，而直接于反射杯25围设该发光二极管芯片13的内表面上形成由反射性能较好的材料制成的反射层，从而达到相同的反射效果。 Please refer to FIG. 2 at the same time. The light emitting diode packaging structure 20 provided for the second embodiment of the present invention is different from the light emitting diode packaging structure 10 of the first embodiment in that a ring is formed on the upper surface 111 of the substrate 11. A reflective cup 25 inside the LED chip 13 , the encapsulation layer 24 is filled in the emitting cup 25 , so as to cover the LED chip 13 inside the reflective cup 25 . The top surface of the reflective cup 25 is flush with the top surface of the encapsulation layer 24 , and a fluorescent layer 232 is formed on the top surfaces of the reflective cup 25 and the encapsulation layer 24 . The reflective cup 25 is made of a material with better reflective properties. Therefore, part of the light emitted by the light emitting diode chip 13 is reflected by the reflective cup 25 and then changes its original irradiation direction and then is emitted outward, thereby making the light emission more concentrated. In order to meet the needs of increasing light intensity. It can be understood that the reflective cup 25 may not be made of reflective material, but directly forms a reflective layer made of a material with better reflective performance on the inner surface of the reflective cup 25 surrounding the light-emitting diode chip 13, so as to achieve Same reflection effect.
请参阅图3，为本发明第三实施例提供的发光二极管封装结构30，其与第一实施例的发光二极管封装结构10不同之处在于，所述发光二极管芯片13的底部通过一粘合层36贴合连接于基板11的第一电极121上。该粘合层36采用胶体材料制成，其内部均匀分布有碳纳米颗粒151。因此，发光二极管芯片13产生的热量一部分向上传导至封装层14，并经由封装层14内的散热颗粒15向外散发，另一部分向下传导，经粘合层36传导至基板11，通过基板11向外散发。由于粘合层36内分布有导热性能良好的碳纳米颗粒151，因此在发光二极管芯片13产生的热量向上经由封装层14向外散发的同时，有利于加速发光二极管芯片13产生热量的向下经由粘合层36传导，使热量快速传导至基板11并由基板11散发至发光二极管封装结构30的外部，使散热效果显著。 Please refer to FIG. 3 , the light emitting diode packaging structure 30 provided for the third embodiment of the present invention is different from the light emitting diode packaging structure 10 of the first embodiment in that the bottom of the light emitting diode chip 13 passes through an adhesive layer 36 is bonded and connected to the first electrode 121 of the substrate 11 . The adhesive layer 36 is made of colloidal material, and carbon nanoparticles 151 are evenly distributed inside it. Therefore, part of the heat generated by the light-emitting diode chip 13 is conducted upwards to the encapsulation layer 14, and dissipated outwards through the heat dissipation particles 15 in the encapsulation layer 14, and the other part is conducted downwards, conducted to the substrate 11 through the adhesive layer 36, and passed through the substrate 11. Radiate outward. Since the carbon nano-particles 151 with good thermal conductivity are distributed in the adhesive layer 36, while the heat generated by the light-emitting diode chip 13 is dissipated upward through the encapsulation layer 14, it is beneficial to accelerate the downward passage of heat generated by the light-emitting diode chip 13. The adhesive layer 36 is conductive, so that the heat is quickly conducted to the substrate 11 and dissipated from the substrate 11 to the outside of the LED packaging structure 30 , so that the heat dissipation effect is remarkable.
可以理解的是，对于本领域的普通技术人员来说，可以根据本发明的技术构思做出其它各种相应的改变与变形，而所有这些改变与变形都应属于本发明权利要求的保护范围。 It can be understood that those skilled in the art can make various other corresponding changes and modifications according to the technical concept of the present invention, and all these changes and modifications should belong to the protection scope of the claims of the present invention.
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