CN102915108B - Device and method for dynamic regulation of core voltage of embedded processor - Google Patents
Device and method for dynamic regulation of core voltage of embedded processor Download PDFInfo
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Abstract
The invention provides a device and a method for dynamic regulation of core voltage of an embedded processor. The device comprises a business statistical analysis module, a core voltage selection module, an input and output control module and a core voltage adjuster. The business statistical analysis module, the core voltage selection module and the input and output control module are positioned in the embedded processor and are connected in sequence, the input and output control module is connected with the core voltage adjuster. The method includes the following steps: acquiring and counting current business data of the embedded processor for determining load data; determining a core voltage value according to the load data; determining an input and output control signal according to the core voltage value; changing a feedback divider resistance combination of the core voltage adjuster by the input and output control signal, and then changing the size of the output voltage of the core voltage adjuster; and providing the output voltage to the embedded processor by the core voltage adjuster. By the aid of the device and the method for dynamic regulation of the core voltage of the embedded processor, the real-time and dynamic adjustment of the core voltage of the embedded processor is achieved, and use efficiency of power consumption of the embedded processor is effectively improved.
Description
Technical field
The present invention relates to embedded system technology field, be specifically related to a kind of flush bonding processor core voltage dynamic adjusting device and method.
Background technology
Flush bonding processor is the core of embedded system, is the most important hardware cell of control, backup system operation.Flush bonding processor of a great variety, application very extensive, be common in the every field such as Industry Control, instrument and meter, military project, consumer electronics.Along with development and the raising of electronic technology and semiconductor technology, the integrated level of flush bonding processor is more and more higher, and travelling speed is more and more faster, and function becomes increasingly complex.Be accompanied by improving constantly of flush bonding processor performance and function, the power management of flush bonding processor and power management seem more and more important.Can reduce by the improvement of chip optimal design and making technology the power consumption of flush bonding processor on the one hand, on the other hand also can be in actual use by the supply voltage of flush bonding processor (particularly core voltage) be carried out to appropriate managerial, effectively to improve flush bonding processor power service efficiency.
The circuit that is illustrated in figure 1 voltage-dropping type DC/DC converter forms schematic diagram, DC/DC converter is a kind of electric pressure converter that input direct voltage (as 3.0V) is converted to other DC voltage (as 1.0V or 5.0V), is conventionally divided into voltage-dropping type, booster type and buck-boost type DC/DC converter.DC/DC converter forms (in Fig. 1 center, element is the element of voltage-dropping type DC/DC converter) by elements such as control chip, switching tube, diode, inductance, electric capacity conventionally.Conventional DC/DC converter adopts PWM (pulse-length modulation) control mode, the switching pulse certain by output frequency, pulse width is adjustable, and the make-and-break time of gauge tap pipe, thus obtain required regulated output voltage.As shown in Figure 1, Vin is input direct voltage, and Vout is output dc voltage, and SW is switching tube, be generally MOSFET or transistor, L is energy storage inductor, and D is fly-wheel diode, and C is filter capacitor, R1, R2 are divider resistance, output voltage is produced after dividing potential drop to error feedback signal and offer DC/DC converter, in order to adjust the height of output voltage, the voltage of stable output.Element in frame is integrated in DC/DC converter chip conventionally.The principle of work of voltage-dropping type DC/DC converter is as follows: when switching tube SW is operated in conducting state under the control of PWM switching pulse, Vin forms loop through switching tube SW, energy storage inductor L and capacitor C, charging current is not only set up DC voltage at capacitor C two ends, and on energy storage inductor L, produces left positive right negative electromotive force; When switching tube SW is operated in cut-off state under the control of PWM switching pulse, because the electric current in energy storage inductor L can not suddenly change, so L by self-induction produce right just, left negative pulse voltage, L, C and D form discharge loop like this, discharge current continues to set up DC voltage at capacitor C two ends, and the DC voltage that C two ends obtain like this can be load supplying.Divider resistance R1, R2, by after output voltage V out dividing potential drop, feed back to DC/DC converter, by the reference voltage V ref with DC/DC converter inside, relatively produce error signal, control the dutycycle (high level time in a wave period and the ratio of low level time) of PWM switching pulse, thus ON time and the closing time of by-pass cock pipe SW, and then the height of adjustment output voltage, form a closed-loop control, to reach the effect of regulated output voltage.
At present flush bonding processor adopts the power management of fixing core voltage or static capable of regulating core voltage conventionally, be illustrated in figure 2 the typical circuit that flush bonding processor core voltage is controlled, in Fig. 2, U1 is voltage-dropping type DC/DC converter, and it adopts PWM control mode conventionally, by input voltage V
iNbe converted to lower output voltage V
cORE, as the core power voltage of flush bonding processor, according to the principle of work of voltage-dropping type DC/DC converter, output voltage V
cORE=V
rEF* (1+R1/R2), V
rEFfor DC/DC converter reference voltage, from formula above, by changing the resistance of fixed resistance R2, or adjust the resistance of variable potentiometer R2, can obtain different output voltage V
cORE.Circuit shown in Fig. 2, although can adjust statically the core voltage of flush bonding processor, it is underaction in use, can not, according to the current payload situation of flush bonding processor, in real time, dynamically adjust the size of core voltage.
Summary of the invention
The features and advantages of the present invention are partly statement in the following description, or can describe obviously from this, or can learn by putting into practice the present invention.
For solving the problem of prior art, the present invention proposes a kind of flush bonding processor core voltage dynamic adjusting device and method, technical solution of the present invention can, according to the current business load of flush bonding processor, in real time, dynamically be adjusted the size of core voltage.
It is as follows that the present invention solves the problems of the technologies described above adopted technical scheme:
According to an aspect of the present invention, a kind of flush bonding processor core voltage dynamic adjusting device is provided, comprise successively connected business statistics analysis module, core voltage selection module and input/output control module, core voltage adjuster, and this business statistics analysis module, core voltage selection module and input/output control module are all positioned at flush bonding processor;
Described business statistics analysis module, for the business datum of the current selection of flush bonding processor described in statistics and analysis and configuration, is determined the load data of this flush bonding processor;
Described core voltage selects module for according to this load data, is described flush bonding processor selection core voltage value;
Described input/output control module, for according to the described core voltage value of selecting, is exported corresponding input/output control signal, controls described core voltage adjuster and exports corresponding core voltage.
Described core voltage adjuster comprises DC/DC converter, variable dividing potential drop feedback resistive network, described DC/DC converter is connected with described variable dividing potential drop feedback resistive network, described input/output control module is connected with described variable dividing potential drop feedback resistive network, described input/output control signal changes the divider resistance size of described variable dividing potential drop feedback resistive network, described divider resistance carries out dividing potential drop to the Voltage-output of described DC/DC converter, obtains corresponding core voltage.
According to one embodiment of present invention, described DC/DC converter is connected with described variable dividing potential drop feedback resistive network by resistance.
According to one embodiment of present invention, described variable dividing potential drop feedback resistive network comprises at least one field effect transistor, the source electrode of described field effect transistor is connected with drain electrode the resistance that is used for dividing potential drop, controls the grid of described field effect transistor with the corresponding described input/output control signal of described field effect transistor quantity.
According to one embodiment of present invention, described variable dividing potential drop feedback resistive network comprises field effect transistor Q1, field effect transistor Q2, resistance R 3, resistance R 4, resistance R 7, resistance R 8, one end contact resistance R2 of resistance R 3, its other end contact resistance R4, the other end ground connection of resistance R 4, one end of resistance R 7 connects the grid of field effect transistor Q1, its other end ground connection, one end of resistance R 8 connects the grid of field effect transistor Q2, its other end ground connection, the source electrode of field effect transistor Q1 and drain electrode be the two ends of contact resistance R4 respectively, copolar end and the earth terminal of the source electrode of field effect transistor Q2 and drain electrode difference contact resistance R3 and resistance R 2.
According to one embodiment of present invention, described input/output control signal comprises the first input/output control signal and the second input/output control signal, the first input/output control signal is for controlling the grid of field effect transistor Q1, and the second input/output control signal is for controlling the grid of field effect transistor Q2.
According to one embodiment of present invention, between field effect transistor Q1 and resistance R 7, be provided with low-pass filter.
According to one embodiment of present invention, between field effect transistor Q2 and resistance R 8, be provided with low-pass filter.
According to one embodiment of present invention, described low-pass filter is made as RC filter network.
According to one embodiment of present invention, also comprise field effect transistor Q3, resistance R 9 and resistance R 10, one end contact resistance R4 of resistance R 9, its other end ground connection, the source electrode of field effect transistor Q3 and drain electrode be the two ends of contact resistance R9 respectively, and one end of resistance R 10 connects the grid of field effect transistor Q3, its other end ground connection, described input/output control signal also comprises the 3rd input/output control signal, and the 3rd input/output control signal is for controlling the grid of field effect transistor Q3.
According to another aspect of the present invention, provide a kind of flush bonding processor core voltage dynamic adjusting method, comprise step:
Gather and add up the current business data of flush bonding processor, determine load data;
According to described load data, determine the core voltage value adapting when preload with described flush bonding processor;
According to described core voltage value, determine corresponding input/output control signal;
The feedback divider resistance that is changed core voltage adjuster by described input/output control signal combines, thereby changes the size of core voltage adjuster output voltage;
Described core voltage adjuster offers described flush bonding processor by the described output voltage after adjusting.
According to one embodiment of present invention, described core voltage adjuster comprises DC/DC converter, variable dividing potential drop feedback resistive network, described DC/DC converter is connected with described variable dividing potential drop feedback resistive network, described input/output control signal changes the divider resistance size of described variable dividing potential drop feedback resistive network, described divider resistance carries out dividing potential drop to the Voltage-output of described DC/DC converter, obtains corresponding core voltage.
According to one embodiment of present invention, described DC/DC converter is connected with described variable dividing potential drop feedback resistive network by resistance.
According to one embodiment of present invention, described variable dividing potential drop feedback resistive network comprises at least one field effect transistor, the source electrode of described field effect transistor is connected with drain electrode the resistance that is used for dividing potential drop, controls the grid of described field effect transistor with the corresponding described input/output control signal of described field effect transistor quantity.
Flush bonding processor core voltage dynamic adjusting device of the present invention and method have realized in real time, dynamically adjusting of flush bonding processor core voltage, effectively improved flush bonding processor power service efficiency, the variable dividing potential drop feedback resistive network of the present invention circuit can carry out multi-tier as required.
By reading instructions, those of ordinary skills will understand feature and the aspect of these embodiment and other embodiment better.
Accompanying drawing explanation
Below by describing particularly the present invention with reference to accompanying drawing and in conjunction with example, advantage of the present invention and implementation will be more obvious, wherein content shown in accompanying drawing is only for explanation of the present invention, and do not form the restriction of going up in all senses of the present invention, in the accompanying drawings:
Fig. 1 is prior art DC/DC converter control circuit schematic diagram;
Fig. 2 is the flush bonding processor core voltage control circuit schematic diagram that prior art is used DC/DC converter chip;
Fig. 3 is flush bonding processor core voltage control circuit schematic diagram of the present invention;
Fig. 4 is the flush bonding processor core voltage control circuit schematic diagram that the present invention uses DC/DC converter chip;
Fig. 5 is three grades of control circuit schematic diagram of first embodiment of the invention flush bonding processor core voltage;
Fig. 6 is second embodiment of the invention flush bonding processor core voltage level Four control circuit schematic diagram.
Embodiment
As shown in Figure 3, flush bonding processor core voltage dynamic adjusting device of the present invention, comprise successively connected business statistics analysis module 10, core voltage selection module 20 and input/output control module 30, core voltage adjuster 40, and this business statistics analysis module 10, core voltage selection module 20 and input/output control module 30 are all positioned at flush bonding processor; Business statistics analysis module 10, for the business datum of the current selection of statistics and analysis flush bonding processor and configuration, is determined the load data of flush bonding processor; Core voltage selects module 20 for according to described load data, is flush bonding processor selection core voltage value; Input/output control module 30, for according to the described core voltage value of selecting, is exported corresponding input/output control signal, controls core voltage adjuster and exports corresponding core voltage.
As shown in Figure 4, according to one embodiment of present invention, core voltage adjuster 40 comprises DC/DC converter 401, variable dividing potential drop feedback resistive network 402, DC/DC converter 401 is connected with variable dividing potential drop feedback resistive network 402, input/output control module 30 is connected with variable dividing potential drop feedback resistive network 402, input/output control signal I/Os changes the divider resistance size of variable dividing potential drop feedback resistive network 402, described divider resistance carries out dividing potential drop to the Voltage-output of DC/DC converter 401, obtains corresponding core voltage.
According to one embodiment of present invention, DC/DC converter 401 is connected with variable dividing potential drop feedback resistive network 402 by resistance, input/output control module 30 is connected with variable dividing potential drop feedback resistive network 402, input/output control signal I/Os changes the divider resistance size of variable dividing potential drop feedback resistive network 402, resistance and divider resistance carry out dividing potential drop to the Voltage-output of DC/DC converter 401, obtain corresponding core voltage.
As shown in Figure 5, it is three grades of control circuit schematic diagram of first embodiment of the invention flush bonding processor core voltage.In the present embodiment, described variable dividing potential drop feedback resistive network 402 comprises field effect transistor Q1, field effect transistor Q2, resistance R 3, resistance R 4, resistance R 7, resistance R 8, one end contact resistance R2 of resistance R 3, its other end contact resistance R4, the other end ground connection of resistance R 4, one end of resistance R 7 connects the grid of field effect transistor Q1, its other end ground connection, one end of resistance R 8 connects the grid of field effect transistor Q2, its other end ground connection, the source electrode of field effect transistor Q1 and drain electrode be the two ends of contact resistance R4 respectively, copolar end and the earth terminal of the source electrode of field effect transistor Q2 and drain electrode difference contact resistance R3 and resistance R 2.Input/output control signal comprises the first input/output control signal I/O1 and the second input/output control signal I/O2, the first input/output control signal I/O1 is for controlling the grid of field effect transistor Q1, and the second input/output control signal I/O2 is for controlling the grid of field effect transistor Q2.
In the present embodiment, between field effect transistor Q1 and resistance R 7, be provided with low-pass filter, between field effect transistor Q2 and resistance R 8, be provided with low-pass filter, described low-pass filter can be RC filter network.
As shown in Figure 6, it is second embodiment of the invention flush bonding processor core voltage level Four control circuit schematic diagram.In the present embodiment, described variable dividing potential drop feedback resistive network 402, except comprising field effect transistor Q1, field effect transistor Q2 in described the first embodiment, resistance R 3, resistance R 4, resistance R 7, resistance R 8, also comprises field effect transistor Q3, resistance R 9 and resistance R 10.One end contact resistance R4 of resistance R 9, its other end ground connection, the source electrode of field effect transistor Q3 and drain electrode be the two ends of contact resistance R9 respectively, one end of resistance R 10 connects the grid of field effect transistor Q3, its other end ground connection, described input/output control signal also comprises the 3rd input/output control signal, and the 3rd input/output control signal is for controlling the grid of field effect transistor Q3.
Flush bonding processor core voltage dynamic adjusting method of the present invention, comprises step:
The current business data of S110, collection and statistics flush bonding processor, determine load data;
S120, the core voltage value that definite according to load data and flush bonding processor adapts when preload;
S130, according to core voltage value, determine corresponding input/output control signal;
S140, the feedback divider resistance that changes core voltage adjuster by input/output control signal combine, thereby change the size of core voltage adjuster output voltage;
S150, core voltage adjuster offer flush bonding processor by the output voltage after adjusting.
According to one embodiment of present invention, core voltage adjuster comprises DC/DC converter, variable dividing potential drop feedback resistive network, DC/DC converter is connected with variable dividing potential drop feedback resistive network, input/output control signal changes the divider resistance size of variable dividing potential drop feedback resistive network, divider resistance carries out dividing potential drop to the Voltage-output of DC/DC converter, obtains corresponding core voltage.Variable dividing potential drop feedback resistive network comprises field effect transistor Q1, field effect transistor Q2, input/output control signal comprises the first input/output control signal I/O1 and the second input/output control signal I/O2, the first input/output control signal I/O1 is for controlling the grid of field effect transistor Q1, and the second input/output control signal I/O2 is for controlling the grid of field effect transistor Q2.
Technical solution of the present invention selects module, input/output control module and core voltage adjuster to form by business statistics analysis module, core voltage, wherein business statistics analysis module, core voltage select module, hardware cell and/or the software module of input/output control module in flush bonding processor to complete, and core voltage adjuster is comprised of DC/DC converter circuit and variable dividing potential drop feedback resistive network.Business statistics analysis module for gathering, the main business data of the current selection of statistics and analysis flush bonding processor and configuration; The flush bonding processor current business load data that core voltage selects module to obtain according to business statistics analysis module, for flush bonding processor is selected needed suitable core voltage size: every kind of business to flush bonding processor, according to the complexity of business, take the indexs such as flush bonding processor resource size and power consumption demand, for traffic load value of every kind of traffic assignments, described value is larger, represents that the core voltage value needing is higher.The flush bonding processor current business data that core voltage selects module to collect according to business statistics analysis module, the traffic load value of each business is added, obtain the current total load value of flush bonding processor, according to predefined corresponding relation, for flush bonding processor is selected needed core voltage; Input/output control module, according to the core voltage size of selecting, is exported corresponding input/output control signal, controls the variable dividing potential drop feedback resistive network in core voltage adjuster, changes the size of divider resistance, exports corresponding core voltage.Core voltage adjuster finally produces the core voltage that flush bonding processor needs.
Figure 5 shows that three grades of dynamic core voltage regulator circuits, compare with Fig. 2 and increased by 2 N-channel MOSFET(field effect transistor Q1, field effect transistor Q2), 6 resistance (R3, R4, R5, R6, R7, R8) and 2 electric capacity (C3, C4).N-channel MOSFET is N NMOS N-channel MOS N field effect transistor, when the positive voltage VGS adding between grid G and source S is greater than the cut-in voltage VT of N-channel MOSFET, N-channel MOSFET is in conducting state, between drain D and source S, present impedance path, otherwise when VGS is less than VT or is negative, N-channel MOSFET, in cut-off state, presents high impedance between drain D and source S.Input/output control signal: control signal I/O1 and control signal I/O2, from flush bonding processor, are respectively used to control conducting and the cut-off of field effect transistor Q1 and field effect transistor Q2.R5 and C3 form RC low-pass filter network, and R6 and C4 form RC low-pass filter network, are respectively used to the interference on filtering control signal I/O1 and I/O2, guarantee field effect transistor Q1 and field effect transistor Q2 reliably working.R7 and R8 are pull down resistor, be respectively used to arrange control signal I/O1 and control signal I/O2 original state is low level, when control signal I/O1 and control signal I/O2 are low level, according to the characteristic of N-channel MOSFET, field effect transistor Q1 and field effect transistor Q2 are simultaneously in cut-off state, and the output voltage of DC/DC converter U1 is V
cORE1=V
rEF* [1+R1/ (R2+R3+R4)]; At control signal I/O1, be high level, control signal I/O2 while being low level, field effect transistor Q1 conducting, field effect transistor Q2 cut-off, the output voltage of DC/DC converter U1 is V
cORE2=V
rEF* [1+R1/ (R2+R3)]; At control signal I/O1, be low level, control signal I/O2 while being high level, field effect transistor Q1 cut-off, field effect transistor Q2 conducting, the output voltage of DC/DC converter U1 is V
cORE3=V
rEF* (1+R1/R2).Visible, by changing control signal I/O1 and control signal I/O2, can dynamically adjust the output voltage of DC/DC converter, for flush bonding processor provides three kinds of different core voltage.
The just example of a tertiary voltage Circuit tuning that Fig. 5 provides, can expand accordingly according to the concrete condition of flush bonding processor in actual applications, obtains more multistage core voltage Circuit tuning.
Figure 6 shows that a dynamic core voltage regulator circuit of level Four, compare with Fig. 5 and increased a N-channel MOSFET(field effect transistor Q3), the resistance R 9 for dividing potential drop increasing is contact resistance R4 and earth terminal respectively, is used for controlling conducting and the cut-off of field effect transistor Q3 from the input/output control signal I/O3 of flush bonding processor.R10 and C5 form RC low-pass filter network, for the interference on filtering control signal I/O3, guarantee field effect transistor Q3 reliably working.It is low level that pull down resistor R11 is used for arranging control signal I/O3 original state, when control signal I/O1, control signal I/O2 and control signal I/O3 are low level, field effect transistor Q1, field effect transistor Q2 and field effect transistor Q3 are simultaneously in cut-off state, and the output voltage of DC/DC converter U1 is V
cORE1=V
rEF* [1+R1/ (R2+R3+R4+R9)]; At control signal I/O3, be high level, control signal I/O1 and control signal I/O2 while being low level, field effect transistor Q3 conducting, field effect transistor Q1 and field effect transistor Q2 cut-off, the output voltage of DC/DC converter U1 is V
cORE2=V
rEF* [1+R1/ (R2+R3+R4)]; At control signal I/O2, be low level, control signal I/O1 while being high level, field effect transistor Q2 cut-off, field effect transistor Q1 conducting, the output voltage of DC/DC converter U1 is V
cORE3=V
rEF* [1+R1/ (R2+R3)]; When control signal I/O2 is high level, field effect transistor Q2 conducting, the output voltage of DC/DC converter U1 is V
cORE4=V
rEF* (1+R1/R2); The rest may be inferred, and N-channel MOSFET of every increase and corresponding control signal, can increase an adjustable voltage grade.
The concrete steps that technical solution of the present invention realizes are as follows:
1. after embedded system electrifying startup, flush bonding processor is with the core voltage operation of default setting;
2. business statistics analysis module gathers and adds up the current business data of flush bonding processor, analyzes the current business load level of flush bonding processor;
3. core voltage selects module according to the flush bonding processor current business load level drawing, according to certain rule, selects the core voltage value adapting when preload with flush bonding processor;
4. input/output control module, according to the core voltage value of selecting, is exported corresponding input/output control signal: control signal I/O1, control signal I/O2;
5. under the control of control signal I/O1, control signal I/O2, by conducting and the cut-off of corresponding N-channel MOSFET, change the feedback divider resistance combination of DC/DC converter, thereby change the size of core voltage adjuster output voltage;
6. core voltage adjuster offers flush bonding processor by the core voltage after adjusting;
7. business statistics analysis module continues to gather and adds up the business datum of flush bonding processor, the traffic load grade of analysis of built-in processor, if traffic load grade changes, reenters the core voltage adjustment process of step 2～step 6.
With reference to the accompanying drawings of the preferred embodiments of the present invention, those skilled in the art do not depart from the scope and spirit of the present invention above, can have multiple flexible program to realize the present invention.For example, the feature that illustrates or describe as the part of an embodiment can be used for another embodiment to obtain another embodiment.These are only the better feasible embodiment of the present invention, not thereby limit to interest field of the present invention, the equivalence that all utilizations instructions of the present invention and accompanying drawing content are done changes, within being all contained in interest field of the present invention.
Claims (13)
1. a flush bonding processor core voltage dynamic adjusting device, is characterized in that:
Comprise successively connected business statistics analysis module, core voltage selection module and input/output control module, core voltage adjuster, and described business statistics analysis module, core voltage selection module and input/output control module are all positioned at flush bonding processor;
Described business statistics analysis module, for the business datum of the current selection of flush bonding processor described in statistics and analysis and configuration, is determined the load data of described flush bonding processor;
Described core voltage selects module for according to described load data, is described flush bonding processor selection core voltage value;
Described input/output control module, for according to the described core voltage value of selecting, is exported corresponding input/output control signal, controls described core voltage adjuster and exports corresponding core voltage;
Described core voltage adjuster comprises DC/DC converter, variable dividing potential drop feedback resistive network, described DC/DC converter is connected with described variable dividing potential drop feedback resistive network, described input/output control module is connected with described variable dividing potential drop feedback resistive network, described input/output control signal changes the divider resistance size of described variable dividing potential drop feedback resistive network, described divider resistance carries out dividing potential drop to the Voltage-output of described DC/DC converter, obtains corresponding core voltage.
2. flush bonding processor core voltage dynamic adjusting device according to claim 1, is characterized in that: described DC/DC converter is connected with described variable dividing potential drop feedback resistive network by a resistance.
3. flush bonding processor core voltage dynamic adjusting device according to claim 2, it is characterized in that: described variable dividing potential drop feedback resistive network comprises at least one field effect transistor, the source electrode of described field effect transistor is connected with drain electrode the resistance that is used for dividing potential drop, controls the grid of described field effect transistor with the corresponding described input/output control signal of described field effect transistor quantity.
4. flush bonding processor core voltage dynamic adjusting device according to claim 3, it is characterized in that: described variable dividing potential drop feedback resistive network comprises field effect transistor Q1, field effect transistor Q2, resistance R 3, resistance R 4, resistance R 7, resistance R 8, one end contact resistance R2 of resistance R 3, its other end contact resistance R4, the other end ground connection of resistance R 4, one end of resistance R 7 connects the grid of field effect transistor Q1, its other end ground connection, one end of resistance R 8 connects the grid of field effect transistor Q2, its other end ground connection, the source electrode of field effect transistor Q1 and drain electrode be the two ends of contact resistance R4 respectively, copolar end and the earth terminal of the source electrode of field effect transistor Q2 and drain electrode difference contact resistance R3 and resistance R 2.
5. flush bonding processor core voltage dynamic adjusting device according to claim 4, it is characterized in that: described input/output control signal comprises the first input/output control signal and the second input/output control signal, the first input/output control signal is for controlling the grid of field effect transistor Q1, and the second input/output control signal is for controlling the grid of field effect transistor Q2.
6. flush bonding processor core voltage dynamic adjusting device according to claim 4, is characterized in that: between field effect transistor Q1 and resistance R 7, be provided with low-pass filter.
7. flush bonding processor core voltage dynamic adjusting device according to claim 4, is characterized in that: between field effect transistor Q2 and resistance R 8, be provided with low-pass filter.
8. according to the flush bonding processor core voltage dynamic adjusting device described in claim 6 or 7, it is characterized in that: described low-pass filter is made as RC filter network.
9. flush bonding processor core voltage dynamic adjusting device according to claim 4, it is characterized in that: also comprise field effect transistor Q3, resistance R 9 and resistance R 10, one end contact resistance R4 of resistance R 9, its other end ground connection, the source electrode of field effect transistor Q3 and drain electrode be the two ends of contact resistance R9 respectively, one end of resistance R 10 connects the grid of field effect transistor Q3, its other end ground connection, described input/output control signal also comprises the 3rd input/output control signal, and the 3rd input/output control signal is for controlling the grid of field effect transistor Q3.
10. a flush bonding processor core voltage dynamic adjusting method, is characterized in that, comprises step:
Gather and add up the current business data of flush bonding processor, determine load data;
According to described load data, determine the core voltage value adapting when preload with described flush bonding processor;
According to described core voltage value, determine corresponding input/output control signal;
The feedback divider resistance that is changed core voltage adjuster by described input/output control signal combines, thereby changes the size of core voltage adjuster output voltage;
Described core voltage adjuster offers described flush bonding processor by the described output voltage after adjusting.
11. flush bonding processor core voltage dynamic adjusting method according to claim 10, it is characterized in that: described core voltage adjuster comprises DC/DC converter, variable dividing potential drop feedback resistive network, described DC/DC converter is connected with described variable dividing potential drop feedback resistive network, described input/output control signal changes the divider resistance size of described variable dividing potential drop feedback resistive network, described divider resistance carries out dividing potential drop to the Voltage-output of described DC/DC converter, obtains corresponding core voltage.
12. flush bonding processor core voltage dynamic adjusting method according to claim 11, is characterized in that: described DC/DC converter is connected with described variable dividing potential drop feedback resistive network by resistance.
13. flush bonding processor core voltage dynamic adjusting method according to claim 11, it is characterized in that: described variable dividing potential drop feedback resistive network comprises at least one field effect transistor, the source electrode of described field effect transistor is connected with drain electrode the resistance that is used for dividing potential drop, controls the grid of described field effect transistor with the corresponding described input/output control signal of described field effect transistor quantity.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210375939.7A CN102915108B (en) | 2012-09-30 | 2012-09-30 | Device and method for dynamic regulation of core voltage of embedded processor |
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| CN201210375939.7A CN102915108B (en) | 2012-09-30 | 2012-09-30 | Device and method for dynamic regulation of core voltage of embedded processor |
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| CN102915108A CN102915108A (en) | 2013-02-06 |
| CN102915108B true CN102915108B (en) | 2014-04-16 |
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| CN105700599A (en) * | 2014-11-24 | 2016-06-22 | 鸿富锦精密工业(武汉)有限公司 | Voltage regulation device for electronic equipment |
| CN105100608B (en) * | 2015-07-03 | 2018-07-13 | 浙江宇视科技有限公司 | A kind of the core voltage adjusting method and device of intelligent camera |
| CN105974184A (en) * | 2016-05-05 | 2016-09-28 | 浪潮电子信息产业股份有限公司 | Method for realizing automatic test of memory Vref Margin |
| CN107977069A (en) * | 2017-12-25 | 2018-05-01 | 湖南长城银河科技有限公司 | The core voltage automaton and method of a kind of Feiteng processor |
| CN115421584A (en) * | 2022-08-23 | 2022-12-02 | 中国电子科技集团公司第十研究所 | Domestic DSP core voltage management method, circuit, equipment and medium |
| CN116841373B (en) * | 2023-08-29 | 2024-01-16 | 苏州浪潮智能科技有限公司 | Embedded computing module switching circuits, carrier board systems and servers |
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