CN102916342A - Vertical-cavity surface-emitting laser device with tunable liquid crystals in inner cavity and manufacturing method thereof - Google Patents
Vertical-cavity surface-emitting laser device with tunable liquid crystals in inner cavity and manufacturing method thereof Download PDFInfo
- Publication number
- CN102916342A CN102916342A CN2012104188650A CN201210418865A CN102916342A CN 102916342 A CN102916342 A CN 102916342A CN 2012104188650 A CN2012104188650 A CN 2012104188650A CN 201210418865 A CN201210418865 A CN 201210418865A CN 102916342 A CN102916342 A CN 102916342A
- Authority
- CN
- China
- Prior art keywords
- liquid crystal
- layer
- dbr
- ridge
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 230000003647 oxidation Effects 0.000 claims abstract description 21
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229920000642 polymer Polymers 0.000 claims abstract description 15
- 210000002858 crystal cell Anatomy 0.000 claims abstract description 8
- 238000002347 injection Methods 0.000 claims abstract description 7
- 239000007924 injection Substances 0.000 claims abstract description 7
- 238000005260 corrosion Methods 0.000 claims description 9
- 230000007797 corrosion Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 8
- 238000001039 wet etching Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000006116 polymerization reaction Methods 0.000 claims description 2
- 238000000206 photolithography Methods 0.000 claims 5
- 238000000151 deposition Methods 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 4
- 238000004140 cleaning Methods 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 230000010287 polarization Effects 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000004988 Nematic liquid crystal Substances 0.000 abstract 1
- 230000005693 optoelectronics Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 29
- 238000010586 diagram Methods 0.000 description 14
- 238000001259 photo etching Methods 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 4
- 101100442490 Artemisia annua DBR2 gene Proteins 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000010025 steaming Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Images
Landscapes
- Semiconductor Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
内腔液晶可调谐垂直腔面发射激光器属于半导体光电子器件领域。该激光器结构分为三部分: 从下到上依次为n型背面电极(11)、底部衬底(10)、下DBR(9)、有源区(8)、包括氧化限制层(7)的p型DBR(12)、p型注入电极(6)、ITO层(14)、取向膜(3)，此为第一部分，从氧化限制层(7)往上为脊型结构；脊型两端为对称结构的聚合物衬垫(5)，形成液晶盒，液晶盒存储有液晶(4) ，此为第二部分；第三部分，依次包括，有出光孔的顶部衬底(1)、上DBR(2)、ITO层(14)、取向膜(3)；第三部分倒立放置在第二部分上，依靠聚合物衬垫(5)支撑。本发明通过在液晶盒两端加调谐电压引起液晶层折射率变化，来实现激光波长的连续调谐。同时，由于向列相液晶独特的各向异性，激光器可以实现激光偏振稳定输出。
An inner cavity liquid crystal tunable vertical cavity surface emitting laser belongs to the field of semiconductor optoelectronic devices. The laser structure is divided into three parts: from bottom to top, the n-type back electrode (11), the bottom substrate (10), the lower DBR (9), the active region (8), including the oxidation limiting layer (7) P-type DBR (12), p-type injection electrode (6), ITO layer (14), alignment film (3), this is the first part, from the oxidation limiting layer (7) upwards into a ridge structure; the two ends of the ridge A polymer liner (5) with a symmetrical structure forms a liquid crystal cell, and the liquid crystal cell stores liquid crystal (4), which is the second part; the third part includes, in turn, the top substrate (1) with a light exit hole, the upper DBR (2), ITO layer (14), alignment film (3); the third part is placed upside down on the second part, supported by the polymer liner (5). The invention realizes the continuous tuning of the laser wavelength by adding a tuning voltage to both ends of the liquid crystal box to cause the change of the refractive index of the liquid crystal layer. At the same time, due to the unique anisotropy of nematic liquid crystals, the laser can achieve laser polarization stable output.
Description
Technical field:
Inner chamber liquid crystal tunable vertical-cavity surface emitting laser belongs to semi-conductor photoelectronic technology and physics of liquid crystals and learns the field, relates to a kind of novel tunable vertical cavity surface emitting laser.
Background technology
Wavelength-tunable vertical-cavity surface emitting laser is the very promising light sources in field such as the dense wave division multipurpose communication technology, detection of gas and spectrum analysis.Inner chamber liquid crystal tunable vertical-cavity surface emitting laser is adding under the tuning voltage effect, utilizes the electrically conerolled birefringence characteristic of liquid crystal layer can realize the wavelength continuous wave output.Because inner chamber liquid crystal tunable vertical-cavity surface emitting laser can reduce cost greatly, improve reliability, following very possible traditional multi-wavelength semiconductor laser array that replaces, and will in fast-developing at present optical interconnection and optical communication network technology, play a significant role.
Wavelength-tunable vertical-cavity surface emitting laser requires the laser stabilization polarization in many applications, so the development of inner chamber liquid crystal tunable vertical-cavity surface emitting laser is significant.The stable output of vertical cavity surface emitting laser realization polarization is main to be adopted as making asymmetric cavity, introducing the modes such as grating and liquid crystal.Germany's Technische University Darmstadt was reported the asymmetric cavity method, the polarization of realizing wavelength tuning by the curvature that changes the upper reflector different crystal orientations is stable, but stress and amount of curvature are wayward because speculum is delayed time outside, are difficult to realize that polarization is stable, unified.The U.S. Chang-Hasnain of Berkeley University seminar has reported that employing high-contrast grating method obtains the polarization tunable vertical-cavity surface emitting laser.Yet because the high-contrast grating is single layer structure, when wet etching discharged grating, the individual layer grating easily was corroded, and has increased the technique manufacture difficulty.France Castany seminar utilizes liquid crystal as the electrooptic modulation layer, realizes the wavelength tuning under the optical pumping, however liquid crystal layer from active area close to, light loss is serious, and the optical pumping mode is unfavorable for commercially producing and practical application.Therefore, we need to invent a kind of new tuning manner and solve above-mentioned technical problem.
Summary of the invention
The object of the present invention is to provide a kind of inner chamber liquid crystal tunable vertical-cavity surface emitting laser, can in wavelength tuning process, realize the stable output of polarization, improve reliability.
Inner chamber liquid crystal tunable vertical-cavity surface emitting laser of the present invention, as shown in Figure 1.Device is divided into three parts: be followed successively by from top to bottom N-shaped backplate 11, base substrate 10, lower DBR9, active area 8, the p-type DBR12 that includes the oxidation limiting layer 7 of light hole, the p-type injecting electrode 6 that light hole is arranged, ITO layer 14, alignment films 3, this is the luminous zone for first, from oxidation limiting layer 7 up structure be ridge; The ridge two ends are the polymer liner 5 of symmetrical structure, consist of liquid crystal cell, and liquid crystal cell stores liquid crystal 4, and this is second portion; Third part is upper reflector, comprises successively, has the top substrate 1 of light hole, upper DBR2, ITO layer 14, alignment films 3; Third part is stood upside down and is placed on the second portion, relies on polymer liner 5 to support.
Structure among the present invention, alignment films 3 obtains by the linear polarized uv polymerization technique;
The present invention also provides a kind of preparation method of inner chamber liquid crystal tunable vertical-cavity surface emitting laser, comprising:
N-shaped backplate 11 is prepared in step 4, sputter, photoetching, corrosion;
Deposit p-type injecting electrode 6 (6) on step 5, the ridge table top, photoetching, corrosion obtain light hole;
In step 14, the liquid crystal cell that consists of to polymer liner 5, inject liquid crystal 4;
Step 15, employing self-registered technology are carried out bonding, curing with luminous zone and upper reflector, finish element manufacturing.
Adopt self-registered technology that bonding, curing is carried out in luminous zone and upper reflector, finish element manufacturing.
Laser of the present invention can be realized the stable output of polarization in wavelength tuning process, improve reliability.
Description of drawings
Inner chamber liquid crystal tunable vertical-cavity surface emitting laser of the present invention
Fig. 1: inner chamber liquid crystal tunable vertical-cavity surface emitting laser cross section structure schematic diagram of the present invention;
Fig. 2: the ridge table top schematic diagram that inner chamber liquid crystal tunable vertical-cavity surface emitting laser makes by lithography;
Fig. 3: device oxidation limiting layer carries out lateral oxidation and forms Injection Current limiting aperture schematic diagram;
Fig. 4: device back side substrate thinning, preparation bottom electrode device architecture schematic diagram;
Fig. 5: make p-type injecting electrode schematic diagram;
Fig. 6: growth ITO schematic diagram;
Fig. 7: growth orientation membrane structure schematic diagram;
Fig. 8: at upper reflector (third part) epitaxial wafer growth ITO schematic diagram;
Fig. 9: growth orientation membrane structure schematic diagram;
Figure 10: make upper reflector ridge table top schematic diagram by lithography
Figure 11: the top substrate attenuate makes the unthreaded hole schematic diagram by lithography
Figure 12: symmetric growth polymer liner schematic diagram
Figure 13: inject the liquid crystal schematic diagram to liquid crystal cell.
Figure 14: luminous zone (first) and upper reflector (third part) glue and rear device architecture schematic diagram.
Figure 15: device reflectivity curve and quantum well gain spectral.
Among the figure: 1, top substrate 2, upper DBR 3, alignment films 4, liquid crystal 5, polymer liner 6, p-type injecting electrode 7, oxidation limiting layer 8, active area 9, lower DBR 10, base substrate 11, N-shaped backplate 12, p-type DBR 13, etch stop layer 14, ITO layer.
Embodiment
Introduce the preparation method of inner chamber liquid crystal tunable vertical-cavity surface emitting laser below in conjunction with Fig. 2-Figure 14;
33.5 couples of lower DBR9 of epitaxial growth successively on GaAs substrate 10, active area 8 and the p-type DBR12 that includes the oxidation limiting layer 7 of light hole;
Photoetching corrosion goes out the ridge table top of 82 μ m * 82 μ m, until expose oxidation limiting layer 7 sidewalls;
With high temperature oxidation furnace device oxidation limiting layer 7 is carried out lateral oxidation, form the Injection Current limiting holes;
Sputtered with Ti/Au, N-shaped backplate 11 is prepared in photoetching, corrosion;
Deposit p-type injecting electrode 6 on the ridge table top, photoetching, corrosion obtain light hole;
Cross machine deposit growth ITO layer 14 with steaming;
Deposit growth photosensitive polymer alignment films 3 is finished first's preparation;
DBR2 and ITO14 on 13,22.5 pairs of successively epitaxial growth etch stop layer on the GaAs substrate 1;
Cross machine deposit growth orientation film 3 with steaming;
Utilize photoetching and selective wet etching method to be etched into 75 μ m * 75 μ m ridge table tops, until expose etch stop layer 13;
With substrate thinning, polishing is cleaned, and with glue spreader spin coating photoresist, photoetching obtains light hole, until expose etch stop layer 13;
Remove etch stop layer with the etch stop layer corrosive liquid, make the upper reflector part;
Symmetric growth polymer liner 5 on the part of luminous zone;
In the liquid crystal cell that surrounds to polymer liner 5, inject liquid crystal 4;
Adopt self-registered technology that bonding, curing is carried out in luminous zone and upper reflector, finish element manufacturing.
Figure 15 provides reflectivity curve and the quantum well gain spectral of device.As can be seen from the figure, the device excitation wavelength can from the 850nm blue shift to 835nm, can be realized the tuning range of 15nm.When device cavity mould wavelength is 835nm, have another chamber mould wavelength 863nm and produce, but quantum well gain corresponding to 835nm wavelength obviously gains greater than 863nm is corresponding, so only have the lase of 835nm wavelength.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210418865.0A CN102916342B (en) | 2012-10-28 | 2012-10-28 | Vertical-cavity surface-emitting laser device with tunable liquid crystals in inner cavity and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210418865.0A CN102916342B (en) | 2012-10-28 | 2012-10-28 | Vertical-cavity surface-emitting laser device with tunable liquid crystals in inner cavity and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102916342A true CN102916342A (en) | 2013-02-06 |
| CN102916342B CN102916342B (en) | 2014-12-03 |
Family
ID=47614627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210418865.0A Active CN102916342B (en) | 2012-10-28 | 2012-10-28 | Vertical-cavity surface-emitting laser device with tunable liquid crystals in inner cavity and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102916342B (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103618211A (en) * | 2013-11-18 | 2014-03-05 | 北京工业大学 | Surface liquid crystal-vertical-cavity surface emitting laser and manufacturing method thereof |
| CN105428550A (en) * | 2015-12-22 | 2016-03-23 | 昆山国显光电有限公司 | Organic light-emitting device |
| CN107093840A (en) * | 2017-07-07 | 2017-08-25 | 北京工业大学 | Independent addressable liquid crystal tuning vertical cavity surface emitting laser arrays and preparation method |
| CN108616031A (en) * | 2018-04-20 | 2018-10-02 | 长春理工大学 | A kind of single polarization semiconductor laser with tunable and preparation method thereof containing alignment films |
| CN110299669A (en) * | 2019-08-26 | 2019-10-01 | 常州纵慧芯光半导体科技有限公司 | Vertical cavity surface emitting laser and preparation method with particulate metal articulamentum |
| CN113013727A (en) * | 2021-03-01 | 2021-06-22 | 中国计量大学 | Quantum dot single photon source based on tunable resonant cavity |
| CN113285350A (en) * | 2021-05-10 | 2021-08-20 | 北京工业大学 | Inner cavity sub-wavelength grating liquid crystal tunable vertical cavity surface emitting laser and preparation method thereof |
| CN113381297A (en) * | 2020-03-09 | 2021-09-10 | 济南晶正电子科技有限公司 | Integrated optical composite substrate |
| CN118336516A (en) * | 2024-06-11 | 2024-07-12 | 长春中科长光时空光电技术有限公司 | Tunable VCSEL of narrow linewidth polymer dispersed liquid crystal and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5301201A (en) * | 1993-03-01 | 1994-04-05 | At&T Bell Laboratories | Article comprising a tunable semiconductor laser |
| US20030134448A1 (en) * | 2002-01-16 | 2003-07-17 | Ju Young Gu | Method of fabricating long wavelength vertical-cavity surface-emitting lasers |
| US6625195B1 (en) * | 1999-07-20 | 2003-09-23 | Joseph Reid Henrichs | Vertical cavity surface emitting laser that uses intracavity degenerate four wave mixing to produce phase-conjugated and distortion free collimated laser light |
| CN101667716A (en) * | 2008-09-03 | 2010-03-10 | 中国科学院半导体研究所 | Double-sided bonding long-wavelength vertical cavity surface emitting laser and manufacturing method thereof |
-
2012
- 2012-10-28 CN CN201210418865.0A patent/CN102916342B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5301201A (en) * | 1993-03-01 | 1994-04-05 | At&T Bell Laboratories | Article comprising a tunable semiconductor laser |
| US6625195B1 (en) * | 1999-07-20 | 2003-09-23 | Joseph Reid Henrichs | Vertical cavity surface emitting laser that uses intracavity degenerate four wave mixing to produce phase-conjugated and distortion free collimated laser light |
| US20030134448A1 (en) * | 2002-01-16 | 2003-07-17 | Ju Young Gu | Method of fabricating long wavelength vertical-cavity surface-emitting lasers |
| CN101667716A (en) * | 2008-09-03 | 2010-03-10 | 中国科学院半导体研究所 | Double-sided bonding long-wavelength vertical cavity surface emitting laser and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| QU HONG WEI ET AL.: "980nm oxide-confined vertical cavity surface emitting laser", 《半导体学报》 * |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103618211A (en) * | 2013-11-18 | 2014-03-05 | 北京工业大学 | Surface liquid crystal-vertical-cavity surface emitting laser and manufacturing method thereof |
| CN103618211B (en) * | 2013-11-18 | 2016-04-06 | 北京工业大学 | Surface liquid crystal-vertical cavity surface emitting laser and preparation method thereof |
| CN105428550A (en) * | 2015-12-22 | 2016-03-23 | 昆山国显光电有限公司 | Organic light-emitting device |
| CN107093840A (en) * | 2017-07-07 | 2017-08-25 | 北京工业大学 | Independent addressable liquid crystal tuning vertical cavity surface emitting laser arrays and preparation method |
| CN108616031A (en) * | 2018-04-20 | 2018-10-02 | 长春理工大学 | A kind of single polarization semiconductor laser with tunable and preparation method thereof containing alignment films |
| CN110299669A (en) * | 2019-08-26 | 2019-10-01 | 常州纵慧芯光半导体科技有限公司 | Vertical cavity surface emitting laser and preparation method with particulate metal articulamentum |
| CN110299669B (en) * | 2019-08-26 | 2019-12-17 | 常州纵慧芯光半导体科技有限公司 | Vertical cavity surface emitting laser with special metal connecting layer and preparation method thereof |
| CN113381297A (en) * | 2020-03-09 | 2021-09-10 | 济南晶正电子科技有限公司 | Integrated optical composite substrate |
| CN113013727A (en) * | 2021-03-01 | 2021-06-22 | 中国计量大学 | Quantum dot single photon source based on tunable resonant cavity |
| CN113285350A (en) * | 2021-05-10 | 2021-08-20 | 北京工业大学 | Inner cavity sub-wavelength grating liquid crystal tunable vertical cavity surface emitting laser and preparation method thereof |
| CN118336516A (en) * | 2024-06-11 | 2024-07-12 | 长春中科长光时空光电技术有限公司 | Tunable VCSEL of narrow linewidth polymer dispersed liquid crystal and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102916342B (en) | 2014-12-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102916342A (en) | Vertical-cavity surface-emitting laser device with tunable liquid crystals in inner cavity and manufacturing method thereof | |
| CN103618211B (en) | Surface liquid crystal-vertical cavity surface emitting laser and preparation method thereof | |
| CN102570302B (en) | Polarization wavelength tunable vertical cavity surface emitting laser and its preparation method | |
| TWI701883B (en) | Nanowire laser structure and fabrication method | |
| CN107093840B (en) | Independently addressable liquid crystal tunable vertical cavity surface emitting laser array and preparation method | |
| CN107257084A (en) | A kind of guide mode resonance grating narrow linewidth vertical cavity surface emitting laser and preparation method thereof | |
| CN102684069B (en) | Hybrid silicone monomode laser based on evanescent field coupling and period microstructural frequency selecting | |
| CN107768979A (en) | Extension integrates high-contrast grating external cavity emitting laser | |
| JP4874768B2 (en) | Wavelength conversion element | |
| JP2004056010A (en) | Nitride semiconductor light emitting device | |
| CN101764354A (en) | Multi-wavelength vertical cavity surface emitting laser based on one-dimension photonic crystal and preparation method thereof | |
| CN113285350A (en) | Inner cavity sub-wavelength grating liquid crystal tunable vertical cavity surface emitting laser and preparation method thereof | |
| CN103199435B (en) | Ultra-low divergence angle inclined light beam single longitudinal mode artificial micro structure laser | |
| CN103887705A (en) | Method for manufacturing silicon-based mixing laser achieving complete metal limitation | |
| CN113708214B (en) | Dual-wavelength VCSEL structure based on selective epitaxial technology and preparation method thereof | |
| CN115189227A (en) | Output coherent array semiconductor laser with completely filled aperture and preparation method thereof | |
| CN108616031A (en) | A kind of single polarization semiconductor laser with tunable and preparation method thereof containing alignment films | |
| CN112510134B (en) | LED indirectly modulating light polarization mode | |
| CN114400499A (en) | Vertical cavity surface emitting laser array structure and preparation method thereof | |
| CN119726377A (en) | Tunable VCSEL structure | |
| CN114976861A (en) | Vertical cavity surface emitting semiconductor laser based on lateral epitaxial technology and preparation method thereof | |
| CN111785819B (en) | A kind of GaN-based narrow-band emission resonant cavity light-emitting diode and its manufacturing method | |
| CN101316025A (en) | Preparation method of fiber-coupled module of red light AlGaInP semiconductor laser | |
| CN102684072A (en) | Hybrid integrated laser and preparation method thereof | |
| CN114094439A (en) | Gallium nitride surface emitting laser based on silicon nitride photonic crystal and preparation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |