CN103000549B - Cavity device and substrate processing equipment comprising same - Google Patents
Cavity device and substrate processing equipment comprising same Download PDFInfo
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- CN103000549B CN103000549B CN201110273597.3A CN201110273597A CN103000549B CN 103000549 B CN103000549 B CN 103000549B CN 201110273597 A CN201110273597 A CN 201110273597A CN 103000549 B CN103000549 B CN 103000549B
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- 239000000758 substrate Substances 0.000 title claims abstract description 93
- 238000012545 processing Methods 0.000 title claims abstract description 21
- 238000012544 monitoring process Methods 0.000 claims abstract description 113
- 230000007246 mechanism Effects 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 18
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- 238000013461 design Methods 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
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- 238000000151 deposition Methods 0.000 description 2
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- 238000009826 distribution Methods 0.000 description 2
- 239000007770 graphite material Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000003190 augmentative effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
The invention discloses a cavity device and substrate processing equipment comprising the same. The cavity device comprises a cavity body, an online monitoring mechanism and N layers of trays, wherein a crafting cavity is limited in the cavity body, a monitoring opening is formed in the cavity body, the N layers of the trays are parallelly arranged in the crafting cavity in the first direction distant from the monitoring opening, the tray of each layer is used for bearing substrates which are circumferentially arranged on the surface of the layer of the tray at intervals, and each of the trays on the first to the (N-1)th layers is provided with at least one hole so that the online monitoring mechanism can monitor at least one substrate borne on the tray of each layer of the N layers via the monitoring opening. By the aid of the cavity device, the state of the substrates on the tray of each layer can be monitored online.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to chamber device and there is its substrate processing equipment.
Background technology
MOCVD technology is since first nineteen sixties proposes, and through the development of 70 to the eighties, the nineties has become core growth technology prepared by the photoelectron material such as GaAs, indium phosphide epitaxial wafer.Be used widely in the photoelectron material such as GaAs, indium phosphide is produced at present.
MOCVD device generally comprises chamber device, gas transport system, exhaust treatment system, control system, substrate transfer system etc.Chamber device is the most crucial hardware of MOCVD device, is also most active field in MOCVD device design.In order to grow the epitaxial wafer of high-quality, and augmenting response chamber capacity, each equipment vendors and research worker make many efforts in the design of reaction chamber structure, design the chamber device of a variety of different structure.Classify from the arrangement form of pallet, single level trays formula chamber device and multiple layer tray formula chamber device can be divided into.Consider and need heating, pallet generally adopts graphite material to make, but is subject to the restriction of graphite material difficulty of processing, and pallet dimension is not easy to do greatly, and this makes reaction chamber single batch of capacity of single level trays structure be very limited.Therefore, the chamber device of multiple layer tray structure receives publicity.
Because the requirement of MOCVD epitaxy growth is harsh, it is desirable to on-line monitoring technique to be applied to chamber device and carry out the information such as the temperature of wafer in on-line monitoring technique growth course, reflectivity and curvature, for the technique adjustment of wafer property diagnosis and next batch.
Therefore in the chamber device of multiple layer tray structure, how to arrange online mechanism for monitoring realize carrying out on-line condition monitoring to the technique growth course of the substrate on each layer pallet, thus the condition between substrate that realizes changes and between each layer pallet, the diagnosis of condition change and the adjustment of technological parameter are the difficult problems that those skilled in the art face.
Summary of the invention
The present invention is intended at least one of solve the problems of the technologies described above.
For this reason, one object of the present invention is to propose a kind ofly to have and can carry out the chamber device of on-line monitoring to the substrate in process.
Another object of the present invention is to propose a kind of substrate processing equipment.
The chamber device of embodiment according to a first aspect of the present invention, comprising: chamber body, is limited with process cavity in described chamber body, and described chamber body is provided with monitoring mouth; On-line monitoring mechanism; With N layer pallet, described N layer pallet is located in described process cavity along the first direction away from described monitoring mouth in parallel with each other, every layer of pallet is arranged in the substrate on the surface of this layer of pallet for the circumferential interval carried along this layer of pallet, wherein the 1st be provided with at least one hole so that at least one substrate on described on-line monitoring mechanism can be carried in described N layer pallet by the monitoring of described monitoring mouth every layer of pallet to every layer of pallet in N-1 layer pallet, N be more than or equal to 2 integer
According to the chamber device of the embodiment of the present invention, owing to being provided with at least one hole the 1st to every layer of pallet in N-1 layer pallet, therefore, along with the rotation of pallet, when the hole on pallet turns to position corresponding with described monitoring mouth in said first direction, described on-line monitoring mechanism can monitor by monitoring mouth and hole at least one substrate be carried on every one deck pallet, thus can realize carrying out on-line monitoring to the state of substrate on every one deck pallet.
According to one embodiment of present invention, the axis of described monitoring mouth is orthogonal with the plane at the surperficial place of described N layer pallet carrying substrates.
According to one embodiment of present invention, described hole is arcuate socket, being centrally located at circumferentially same and the described 1st being more than or equal to the diameter of described substrate to the radial width in the hole on N-1 layer pallet of the substrate on the described 1st to the radial center and this layer of pallet in the hole on N-1 layer pallet.
According to some embodiments of the present invention, a hole is equipped with on described 1st to every layer of pallet in N-1 layer pallet, described 1st correspondingly in said first direction to the hole on N-1 layer pallet is arranged, and in the described 1st to the adjacent two layers pallet in N-1 layer pallet contiguous described monitoring mouth pallet on the camber ratio in hole away from the large predetermined value of radian in the hole on the pallet of described monitoring mouth so that described on-line monitoring mechanism can by the hole monitoring on the pallet of contiguous described monitoring mouth away from least one substrate on described monitoring mouth pallet.
Further, described predetermined value is the radian of a substrate at the described same circumference circumferentially occupied.
According to other embodiments of the present invention, described 1st reduces to the hole number on N-1 layer pallet successively along described first direction, is positioned at aliging respectively with the corresponding hole on the pallet of the vicinity being positioned at described first direction described monitoring mouth away from the hole on the pallet of described monitoring mouth of described first direction in the wherein said 1st to the adjacent two layers pallet in N-1 layer pallet.
Further, the hole number on i-th layer of pallet is N-i, and wherein i is integer and 1≤i≤N-1.
Further, the quantity of the described substrate that described N layer pallet can be evenly arranged along the circumference of this pallet is M, and wherein the radian in each described hole is more than or equal to (1/M) × 360.
Further, described monitoring mouth is multiple, and described in described multiple monitoring opening's edge, chamber body circumferentially, and described mechanism for monitoring comprises multiple probe, and described multiple probe is located at described multiple monitoring mouth place respectively.
Alternatively, described first direction is direction from the top down, and wherein said monitoring mouth is located on the roof of described chamber body.
In addition, alternatively, described first direction is direction from bottom to top, and wherein said monitoring mouth is located on the diapire of described chamber body.
The substrate processing equipment of embodiment according to a second aspect of the present invention, comprises gas handling system, gas extraction system and chamber device, and wherein said chamber device is the chamber device of embodiment according to a first aspect of the present invention.
Wherein, described substrate processing equipment can be MOCVD device.
Additional aspect of the present invention and advantage will part provide in the following description, and part will become obvious from the following description, or be recognized by practice of the present invention.
Accompanying drawing explanation
Above-mentioned and/or additional aspect of the present invention and advantage will become obvious and easy understand from accompanying drawing below combining to the description of embodiment, wherein:
Fig. 1 is the schematic diagram of substrate processing equipment according to an embodiment of the invention;
Fig. 2 a ~ Fig. 2 c is the schematic top plan view according to the pallet 3001 ', 3002 ' and 3003 ' in the chamber device of the present invention's example, wherein: Fig. 2 a shows the pallet 3001 ' being positioned at the 1st layer, Fig. 2 b shows pallet 3002 ', Fig. 2 c being positioned at the 2nd layer and shows the pallet 3003 ' being positioned at the 3rd layer; With
Fig. 3 a ~ Fig. 3 c is according to the pallet 3001 in the chamber device of another example of the present invention ", 3002 " and 3003 " schematic top plan view; wherein: Fig. 3 a shows the pallet 3001 being positioned at the 1st layer ", Fig. 3 b shows the pallet 3002 being positioned at the 2nd layer ", Fig. 3 c shows the pallet 3003 being positioned at the 3rd layer ".
Embodiment
Be described below in detail embodiments of the invention, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Being exemplary below by the embodiment be described with reference to the drawings, only for explaining the present invention, and can not limitation of the present invention being interpreted as.
In describing the invention, it will be appreciated that, term " " center ", " longitudinal direction ", " transverse direction ", " on ", D score, " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", orientation or the position relationship of the instruction such as " outward " are based on orientation shown in the drawings or position relationship, only the present invention for convenience of description and simplified characterization, instead of indicate or imply that the device of indication or element must have specific orientation, with specific azimuth configuration and operation, therefore limitation of the present invention can not be interpreted as.In addition, term " first ", " second " only for describing object, and can not be interpreted as instruction or hint relative importance or imply the quantity indicating indicated technical characteristic.Thus, be limited with " first ", the feature of " second " can express or impliedly comprise one or more these features.In describing the invention, except as otherwise noted, the implication of " multiple " is two or more.
In describing the invention, it should be noted that, unless otherwise clearly defined and limited, term " installation ", " being connected ", " connection " should be interpreted broadly, and such as, can be fixedly connected with, also can be removably connect, or connect integratedly; Can be mechanical connection, also can be electrical connection; Can be directly be connected, also indirectly can be connected by intermediary, can be the connection of two element internals.For the ordinary skill in the art, concrete condition above-mentioned term concrete meaning in the present invention can be understood.
In addition, in describing the invention, except as otherwise noted, the implication of " multiple " is two or more.
First chamber device according to the embodiment of the present invention is described with reference to the drawings below.
Substrate processing device according to the embodiment of the present invention illustrated in fig. 1.Known with reference to figure 1, according to the chamber device of the embodiment of the present invention, comprise chamber body 100, on-line monitoring mechanism 200 and N layer pallet 300.
Specifically, be limited with process cavity in chamber body 100, chamber body 100 is provided with monitoring mouth 110.
N layer pallet 300 (has illustrated 4 layers of pallet 3001 in Fig. 1, 3002, 3003 and 3004) be located in parallel with each other in process cavity along the first direction (in Fig. 1 for from the top down direction) away from monitoring mouth 110, every layer of pallet is (corresponding to the pallet 3001 in Fig. 1, 3002, 3003 and 3004) substrate 400 on the surface of this layer of pallet is arranged in for the circumferential interval carried along this layer of pallet, wherein the 1st to N-1 layer (when in FIG, referring to " the 1st to the 3rd layer ") pallet is (corresponding to the pallet 3001 in Fig. 1, 3002 and 3003, can not providing holes on n-th layer pallet and pallet 3004.) in every layer of pallet (i.e. pallet 3001,3002 and 3003) be provided with at least one hole (corresponding to hole 3101,3102 and 3103) so that at least one substrate 400 on on-line monitoring mechanism 200 can be carried in N layer pallet 300 by the monitoring of monitoring mouth 110 every layer of pallet (pallet 3001,3002,3003 and 3004 corresponding in Fig. 1).
It should be noted that, about the number of plies of N layer pallet 300, as long as be more than or equal to 2, can the number of plies wanted of design as required.
According to the chamber device of the embodiment of the present invention, due to the 1st to every layer of pallet in N-1 layer pallet (corresponding to the pallet 3001 in Fig. 1, 3002 and 3003) at least one hole is provided with on, therefore, along with the rotation of N layer pallet 300, when hole is (corresponding to hole 3101, 3102 and 3103) when turning to position corresponding with monitoring mouth 110 in said first direction, on-line monitoring mechanism 200 can be carried on every one deck pallet (corresponding to the pallet 3001 in Fig. 1 by monitoring mouth 110 and hole 310 monitoring, 3002, 3003 and 3004) at least one substrate 400 on, thus can realize every one deck pallet (corresponding to the pallet 3001 in Fig. 1, 3002, 3003 and 3004) state of the substrate 400 on, such as temperature, reflectivity, curvature etc. carry out on-line monitoring.
Be understandable that, on-line checkingi mechanism 200 can be located at monitoring mouth place or be connected with monitoring mouth 110 by circuit, probe etc.
It should be noted that, " monitoring " herein both can be " directly monitoring " also can be " indirect monitoring ".So-called " directly monitoring " refers to and directly monitors the presence (comprising temperature, reflectivity, curvature etc.) of substrate 400, and so-called " indirect monitoring " refers to that the presence by monitoring N layer pallet 300 monitors the presence of the substrate 400 be carried on N layer pallet 300 indirectly.
It should be noted that, in chamber device in the substrate processing equipment of the embodiment of the present invention shown in Fig. 1, monitoring mouth 110 is on the roof of chamber body 100, described first direction is direction from the top down, N layer pallet 300 is horizontally disposed with, on-line monitoring mechanism 200 pairs of substrates 400 are implemented " directly monitoring ", but the present invention is not limited to this.Such as, monitoring mouth 110 can also be arranged on the diapire of chamber body 100, now monitor mouth 110 corresponding with the lower surface of N layer pallet 300, described first direction is that (namely the pallet of contiguous described monitoring mouth refers to " pallet of lower floor " for direction from bottom to top, and refer to " pallet on upper strata " away from the pallet of described monitoring mouth), now on-line monitoring mechanism 200 pairs of substrates 400 are implemented " indirect monitoring ".In addition, N layer pallet 300 can also vertically be arranged, with relative with N layer pallet 300 on the sidewall that now according to the design feature of chamber body 110, monitoring mouth 110 can be located at chamber body 110, described first direction is in the case direction from left to right or direction from right to left.
Below describe is carry out based on the structure of the chamber device in the substrate processing equipment shown in Fig. 1, about the chamber device of other collocation forms above-mentioned, carrying out reasoning by reference to the chamber device shown in Fig. 1 to those skilled in the art can easily understand its operation principle.
In some embodiments of the invention, the axis of monitoring mouth 110 is orthogonal with the plane at the surperficial place of N layer pallet 300 carrying substrates 400.Thus, on-line monitoring can be carried out to the substrate on each layer pallet 300 more accurately.
In some embodiments of the invention, hole 310 is arcuate socket, described 1st to N-1 layer pallet (corresponding to the 1st in Fig. 1 to the 3rd layer of pallet, i.e. pallet 3001,3002 and 3003) on the radial center in hole 310 and being centrally located at circumferentially same and the described 1st being more than or equal to the diameter of substrate 400 to the radial width in the hole 310 on N-1 layer pallet (corresponding to the 1st in Fig. 1 to the 3rd layer of pallet, i.e. pallet 3001,3002 and 3003) of substrate 400 on this layer of pallet (i.e. pallet 3001,3002 and 3003).Thus, on-line monitoring can be carried out to the radial state information of the substrate 400 on each layer of N layer pallet 300, and due to the design feature such as gas supply-discharge system and heating system of chamber device, the transition information of the radial state of substrate 400 regulates treatment conditions in chamber device to improve the key of Substrate treatment quality, and the chamber device therefore with this structure is more conducive to raising Substrate treatment quality.
Below, first with reference to figure 1 and Fig. 2 a ~ 2c, describe according to the pallet in the chamber device of a kind of preferred embodiment of the present invention for N=4.Be that the situation that other are more than or equal to the integer of 2 easily can be derived on the basis with reference to figure 1 and Fig. 2 a ~ 2c based on following description about N.
As shown in Figure 1, in some embodiments of the invention, 1st to the 3rd layer of (i.e. N-1 layer) pallet 3001, every layer of pallet in 3002 and 3003 is equipped with a hole 310, and the 1st to the 3rd layer of pallet 3001, hole 3101 on 3002 and 3003,3102 and 3103 corresponding settings in said first direction, and the 1st to the 3rd layer of pallet 3001, adjacent two layers pallet in 3002 and 3003 (such as, pallet 3001 and 3002) in contiguous monitoring mouth 110 pallet on the camber ratio in hole (hole 3101 corresponding on pallet 3001) of (corresponding to the pallet 3001 in " pallet 3001 and the 3002 ") pallet away from monitoring mouth 110 the large predetermined value of radian in the hole (hole 3102 corresponding on pallet 3002) of (corresponding to the pallet 3002 in " pallet 3001 and 3002 ") so that on-line monitoring mechanism 200 can by hole (hole 3101 corresponding on the pallet 3001) monitoring on the pallet (corresponding to the pallet 3001 in " pallet 3001 and 3002 ") of contiguous monitoring mouth 110 away from least one substrate 400 on the pallet (corresponding to the pallet 3002 in " pallet 3001 and 3002 ") of monitoring mouth 110.
Exemplarily, Fig. 2 a ~ Fig. 2 c shows has 4 layers of support holder structure and the schematic top plan view of the 1 to 3 layer of pallet 3001 ', 3002 ' and 3003 ' in monitoring mouth 110 is located on the roof of chamber body 100 chamber device: Fig. 2 a shows the pallet 3001 ' being positioned at the 1st layer, Fig. 2 b shows pallet 3002 ', Fig. 2 c being positioned at the 2nd layer and shows the pallet 3003 ' being positioned at the 3rd layer.
As shown in Fig. 2 a ~ 2c, the hole 3101 ', 3002 ' and 3003 ' on the 1st to the 3rd layer of pallet 3001 ', 3002 ' and 3003 ' is upper corresponding in direction (that is, described first direction) from the top down.In other words, the projection in the hole 3103 ' on the 3rd layer of pallet 3003 ' is positioned at the projection in the hole 3102 ' on the 2nd layer of pallet 3002 ', and the projection in hole 3102 ' on the 2nd layer of pallet 3002 ' is positioned at the projection in the hole 3101 ' on the 1st layer of pallet 3001 '.
The N layer pallet 300 of this structure, ensure that the hole of being monitored the pallet of mouth by vicinity can obtain the presence information away from the substrate 400 on the pallet of monitoring mouth 110, the presence information of the substrate 400 on pallet 3002 ' such as can be obtained by the hole 3101 ' of pallet 3001 ', the presence information of the substrate 400 on pallet 3003 ' can be obtained by the hole 3102 ' of pallet 3002 ', the information of the upper substrate 400 of its lower tray (not shown) can be obtained by the hole 3103 ' of pallet 3003 ', simultaneously, each layer pallet 3001 ' can be made, hole 3101 ' on 3002 ' and 3003 ', 3102 ' and 3103 ' radian little as much as possible, thus can pallet 3001 ' be improved, 3002 ' and 3003 ' intensity and useful life, and the Substrate treatment amount of every batch can be improved.
Further preferably, described predetermined value is the radian of a substrate 400 at the described same circumference circumferentially occupied.The quantity of the substrate 400 that can be evenly arranged with the circumference along this pallet on N layer pallet for M (that is, a substrate 400 is 1/M at the radian of the described circumference circumferentially occupied) calculate, the radian of the arcuate socket then on i-th layer of pallet is ((N-i)/M) × 360, wherein 1≤i≤N-1.That is, the difference of the radian of the arcuate socket on the radian of the arcuate socket on i-th layer of pallet and the i-th+1 layer pallet is ((N-i)/M) × 360-((N-i-1)/M) × 360=1/M, and namely substrate 400 is at the radian of the described same circumference circumferentially occupied.
Such as, 4th layer of pallet can be provided with 12 (M=12) individual substrate 400 (for the 4th layer of not apertured) for 4 (N=4) layer pallet, wherein each substrate 400 is 30 degree at the radian circumferentially occupied, the radian of the arcuate socket 3101 ' then on the 1st layer of pallet 3001 ' is 90 degree, and the radian of arcuate socket 3102 ' on the 2nd layer of pallet 3002 ' is 60 degree, the radian in the hole 3103 ' on the 3rd layer of pallet 3003 ' is 30 degree, that is from the 1st layer to the 3rd layer, the hole being positioned at upper strata is greater than 30 degree, the hole being positioned at lower floor successively.
Thus, on-line monitoring can be carried out to all information of the circumferencial direction along pallet (i.e. pallet 3001 ', 3002 ' and 3003 ') of a substrate 400 on every layer of pallet (i.e. pallet 3001 ', 3002 ' and 3003 '), more be conducive to the distribution situation of the various conditions diagnosed in chamber device.
Below, first with reference to figure 1 and Fig. 3 a ~ 3c, the pallet in chamber device is according to another embodiment of the present invention described.
Fig. 3 a ~ Fig. 3 c shows to be had 4 layers of support holder structure and monitors the schematic top plan view that mouth 110 is located at the pallet 300 in the chamber device of the roof of chamber body 100, wherein: Fig. 3 a shows the pallet 3001 being positioned at the 1st layer "; Fig. 3 b shows the pallet 3002 being positioned at the 2nd layer ", Fig. 3 c shows the pallet 3003 being positioned at the 3rd layer ".
1st layer to N-1 layer pallet (i.e. pallet 3001 ", 3002 in some embodiments of the invention " and 3003 ") on the quantity in hole reduce along described first direction, wherein in the 1st to the adjacent two layers pallet in N-1 layer pallet away from the hole on the pallet of monitoring mouth 110 be close to the corresponding hole of monitoring on the pallet of mouth 110 and align.
As shown in Fig. 3 a ~ 3c, hole number on 1st layer to the 3rd layer pallet reduces successively along direction from the top down, aligns in the adjacent two layers pallet in the 1st layer to the 3rd layer pallet away from the hole on the pallet of monitoring mouth 110 with contiguous corresponding hole of monitoring on the pallet of mouth 110.In other words, the 3rd layer of pallet 3003 " on hole 3103 " projection and the 2nd layer of pallet 3002 " on hole 3102 " projection overlap, and the 2nd layer of pallet 3002 " on hole 3102 " projection and the 1st layer of pallet 3001 " on hole 3101 " projection overlap.The pallet of this structure not only can make the radian in the hole on every layer of pallet little of the Substrate treatment amount of the intensity improving pallet and useful life and every batch as much as possible as mentioned above.In addition, by making hole along the distribution of pallet circumference, while the presence information (reflecting the conditional uniformity axially in chamber device) obtaining the substrate on each layer pallet, the presence information (reflecting the technological parameter in the radial direction of every layer of pallet) of multiple substrate in every layer of pallet can also be obtained by the radian designing each arcuate socket, be therefore more conducive to the technological parameter uniformity in on-line monitoring chamber device in all directions.
Preferably, the hole number on i-th layer of pallet is N-i, and wherein i is integer and 1≤i≤N-1 (that is, the 1st in N-1 layer pallet, the quantity in the hole on i-th layer of pallet is N-i).Exemplarily, as shown in Fig. 3 a ~ 3c, the 1st layer of pallet 3001 " on have 3 holes 3101 ", and the 2nd layer of pallet 3002 " have 2 holes 3102 ", the 3rd layer of pallet 3003 " have 1 hole 3103 ".Thus, can realize can both realizing on-line monitoring to every layer of pallet with minimum hole.
Further preferably, the quantity of the substrate 400 that every layer of pallet can be evenly arranged along the circumference of this pallet is M, and the radian in each hole 310 is more than or equal to (1/M) × 360.Thus, can by the presence information of the pallet acquisition of contiguous monitoring mouth 110 away from least 1 substrate in the pallet of monitoring mouth 110.
In some embodiments of the invention, monitoring mouth 110 is multiple, and along chamber body 100 circumferentially, mechanism for monitoring 200 comprises multiple probe (not shown) to multiple monitoring mouth 110, and described multiple probe is located at multiple monitoring mouth 110 place respectively.Thus, the monitoring frequency to substrate not only can be improved, and the impact of uniformity that the structure that can overcome reaction chamber device circumferentially goes up for the substrate 400 at pallet 300, thus be more conducive to adjusting process parameter to improve the uniformity of substrate 400.
Below with reference to the accompanying drawings 1 substrate processing equipment describing embodiment according to a second aspect of the present invention.
As shown in Figure 1, comprise gas handling system, gas extraction system and chamber device according to the substrate processing equipment of the embodiment of the present invention, wherein, described chamber device is the chamber device of above-mentioned any embodiment.Described substrate processing equipment can be such as MOCVD device.
Below with the substrate processing equipment (such as, MOCVD device) shown in Fig. 1 for example simply describes its course of work and operation principle.
According to the MOCVD device of the embodiment of the present invention, when carrying out substrate 400 and processing, first substrate 400 is positioned on each layer pallet, after this N layer pallet 300 is moved in process cavity.Then, close process cavity, carry out heat treated, make pallet rotate simultaneously to substrate, carry out Substrate treatment by gas handling system input process gas wherein, after being reacted by gas extraction system, gas discharges process cavity simultaneously.
Carrying out in processing procedure to substrate, because N layer pallet is around central axis, and the 1st to every layer of pallet in N-1 layer pallet (corresponding to the pallet 3001 in Fig. 1, 3002 and 3003) at least one hole is provided with on (corresponding to the hole 3101 in Fig. 1, 3102 and 3103), therefore, along with the rotation of N layer pallet 300, when hole 310 turns to position corresponding with monitoring mouth 110 in said first direction, on-line monitoring mechanism 200 can be monitored by monitoring mouth 110 and hole 310 and be carried on pallet 3001, 3002, at least one substrate 400 on 3003 and 3004, thus can realize pallet 3001, 3002, the state of the substrate 400 on 3003 and 3004 carries out on-line monitoring, the temperature of such as substrate surface, the reflectivity of substrate deposition film surface, the curvature etc. of substrate, and monitoring result is fed back in time control system with adjusting process parameter in time.Wherein the temperature of substrate surface and the reflectivity of substrate deposition film surface can be monitored by a testing agency, the curvature of substrate can be undertaken by other testing agency, certainly along with technological progress, these three parameters also can be monitored by an on-line checkingi mechanism.
In the description of this specification, specific features, structure, material or feature that the description of reference term " embodiment ", " some embodiments ", " example ", " concrete example " or " some examples " etc. means to describe in conjunction with this embodiment or example are contained at least one embodiment of the present invention or example.In this manual, identical embodiment or example are not necessarily referred to the schematic representation of above-mentioned term.And the specific features of description, structure, material or feature can combine in an appropriate manner in any one or more embodiment or example.
Although illustrate and describe embodiments of the invention, those having ordinary skill in the art will appreciate that: can carry out multiple change, amendment, replacement and modification to these embodiments when not departing from principle of the present invention and aim, scope of the present invention is by claim and equivalents thereof.
Claims (13)
1. a chamber device, is characterized in that, comprising:
Chamber body, is limited with process cavity in described chamber body, and described chamber body is provided with monitoring mouth;
On-line monitoring mechanism; With
N layer pallet, described N layer pallet is located in described process cavity along the first direction away from described monitoring mouth in parallel with each other, every layer of pallet is arranged in the substrate on the surface of this layer of pallet for the circumferential interval carried along this layer of pallet, wherein the 1st be provided with at least one hole so that at least one substrate on described on-line monitoring mechanism can be carried in described N layer pallet by the monitoring of described monitoring mouth every layer of pallet to every layer of pallet in N-1 layer pallet, wherein N be more than or equal to 2 integer.
2. chamber device according to claim 1, is characterized in that, the axis of described monitoring mouth is orthogonal with the plane at the surperficial place of described N layer pallet carrying substrates.
3. chamber device according to claim 2, it is characterized in that, described hole is arcuate socket, being centrally located at circumferentially same and the described 1st being more than or equal to the diameter of described substrate to the radial width in the hole on N-1 layer pallet of the substrate on the described 1st to the radial center and this layer of pallet in the hole on N-1 layer pallet.
4. chamber device according to claim 3, it is characterized in that, a hole is equipped with on described 1st to every layer of pallet in N-1 layer pallet, the described 1st corresponding setting in said first direction to the hole on N-1 layer pallet, and the camber ratio of being close to the hole on the pallet of described monitoring mouth in the described 1st to the adjacent two layers pallet in N-1 layer pallet is monitored away from least one substrate on the pallet of described monitoring mouth so that described on-line monitoring mechanism can pass through the hole be close on the pallet of described monitoring mouth away from the large predetermined value of radian in the hole on the pallet of described monitoring mouth.
5. chamber device according to claim 4, is characterized in that, described predetermined value is the radian of a substrate at the described same circumference circumferentially occupied.
6. chamber device according to claim 3, it is characterized in that, described 1st reduces to the hole number on N-1 layer pallet successively along described first direction, aligns in the wherein said 1st to the adjacent two layers pallet in N-1 layer pallet away from the hole on the pallet of described monitoring mouth with the corresponding hole on the pallet of contiguous described monitoring mouth.
7. chamber device according to claim 6, is characterized in that, the hole number on i-th layer of pallet is N-i, and wherein i is integer and 1≤i≤N-1.
8. chamber device according to claim 7, is characterized in that, the quantity of the described substrate that described N layer pallet can be evenly arranged along the circumference of this pallet is M, and wherein the radian in each described hole is more than or equal to (1/M) × 360.
9. chamber device according to claim 1, it is characterized in that, described monitoring mouth is multiple, and described in described multiple monitoring opening's edge, chamber body circumferentially, and described on-line monitoring mechanism comprises multiple probe, described multiple probe is located at described multiple monitoring mouth place respectively.
10. chamber device according to claim 1, is characterized in that, described first direction is direction from the top down, and wherein said monitoring mouth is located on the roof of described chamber body.
11. chamber device according to claim 1, is characterized in that, described first direction is direction from bottom to top, and wherein said monitoring mouth is located on the diapire of described chamber body.
12. 1 kinds of substrate processing equipments, comprise gas handling system, gas extraction system and chamber device, it is characterized in that, described chamber device is the chamber device according to any one of claim 1-11.
13. substrate processing equipments according to claim 12, is characterized in that, described substrate processing equipment is MOCVD device.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101314844A (en) * | 2008-06-20 | 2008-12-03 | 江苏大学 | A MOCVD reaction chamber with a horizontal tangential inlet and a central vertical outlet |
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| US7372582B2 (en) * | 2002-10-18 | 2008-05-13 | Hitachi, Ltd. | Method for fabrication semiconductor device |
| JP4080392B2 (en) * | 2003-07-17 | 2008-04-23 | 東京エレクトロン株式会社 | Gasification monitor, mist detection method, film forming method, film forming apparatus |
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| Title |
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| 现代MOCVD技术的发展与展望;文尚胜等;《华南师范大学学报》;19991231(第3期);第99－107页 * |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |