CN103022284A - LED chip cutting method and LED chip manufactured by same - Google Patents
LED chip cutting method and LED chip manufactured by same Download PDFInfo
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- CN103022284A CN103022284A CN2013100048580A CN201310004858A CN103022284A CN 103022284 A CN103022284 A CN 103022284A CN 2013100048580 A CN2013100048580 A CN 2013100048580A CN 201310004858 A CN201310004858 A CN 201310004858A CN 103022284 A CN103022284 A CN 103022284A
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- led chip
- chip
- semiconductor substrate
- cutting method
- cutting
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- 238000005520 cutting process Methods 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- 238000005260 corrosion Methods 0.000 claims abstract description 9
- 230000007797 corrosion Effects 0.000 claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 239000013078 crystal Substances 0.000 claims abstract description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 5
- 230000011218 segmentation Effects 0.000 claims description 24
- 229910052594 sapphire Inorganic materials 0.000 claims description 13
- 239000010980 sapphire Substances 0.000 claims description 13
- 229910002601 GaN Inorganic materials 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000000608 laser ablation Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 238000007747 plating Methods 0.000 abstract description 3
- 230000004907 flux Effects 0.000 abstract description 2
- 230000008569 process Effects 0.000 abstract description 2
- 230000006698 induction Effects 0.000 abstract 1
- 238000012913 prioritisation Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000005422 blasting Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- Dicing (AREA)
Abstract
The invention discloses an LED chip cutting method on the basis of side-wall corrosion. The LED chip cutting method includes that an LED wafer is subjected to front laser scribing and side-wall corrosion and then is manufactured to form a chip according to a normal LED chip manufacturing process; back laser hidden cutting is carried out after the wafer is subjected to thinning and back plating, and positioning of hidden cutting lines is controlled, so that the hidden cutting lines are staggered from front scribing lines; and an oblique fracture surface is formed on each side wall of a crystal grain under the induction action of stress during fracturing, lateral light emergence is facilitated, the integral luminous flux of the chip is increased, and the appearance and the electric performance of the chip are unaffected. The invention further discloses the LED chip manufactured by the LED chip cutting method. Edges of the LED chip are in the shape of 'Z'-shaped sections with the oblique fracture surfaces. The 'Z'-shaped sections are manufactured by means of laser hidden cutting after the GaN wafer which is a semiconductor substrate is subjected to a chip side-wall corrosion process, accordingly, quantities of emergent light on the side walls are increased, and the brightness of the integral LED chip is improved.
Description
Technical field
The present invention relates to LED and manufacture the field, relate in particular to a kind of led chip cutting method.
Background technology
Usually sapphire substrate LED chip technique is after introducing the sidewall corrosion, all can be behind the wafer attenuate direct sliver, the sidewall of the chip of output can be more vertical like this, is unfavorable for the side bright dipping.
Summary of the invention
The objective of the invention is for the problems of the prior art, a kind of led chip cutting method of effective increase light emission rate and the led chip of preparation thereof are provided.
For reaching above purpose, the invention provides a kind of led chip cutting method based on the sidewall corrosion, comprise the steps: that (1) provides the Semiconductor substrate with GaN extension luminescent layer, carry out laser scribing in the Semiconductor substrate front and form groove to cut apart crystal grain, adopt wet etching method corrosion laser ablation zone in groove, to form coarse surface, finish on this basis follow-up chip manufacturing; (2) will be coated with again back reflector after Semiconductor substrate attenuate, the polishing; (3) carry out the stealthy cutting of laser at the Semiconductor substrate back side, the groove in cutting position and Semiconductor substrate front staggers in the horizontal direction; (4) along stealthy cutting position the chip splitting is opened, have " ㄣ " shape section of oblique segmentation face this moment along the formation of splitting between the stealthy cutting position at the channel bottom in Semiconductor substrate front and the Semiconductor substrate back side.The LED wafer is finished chip manufacturing according to normal led chip manufacturing process after corroding through front laser scribing, sidewall; Carry out the stealthy cutting of backside laser after wafer attenuate, the back of the body plating, control stealthy line of cut position itself and front scribe line are staggered; Stress induced lower, an oblique segmentation face will appear in the crystal grain sidewall, more be conducive to the side bright dipping during sliver, increase the whole luminous flux of chip and not affect the outward appearance of chip and electrical.
As the further prioritization scheme of this patent, the inclination angle of the oblique segmentation face of described " ㄣ " shape section reduces along with the increase of chip size, reduces the incidence angle of light as far as possible, and its emergent light is increased.
As the further prioritization scheme of this patent, the depth of cut by reducing the Semiconductor substrate back side is with the inclination angle of the oblique segmentation face that reduces " ㄣ " shape section.
As the further prioritization scheme of this patent, the material of described Semiconductor substrate comprises sapphire, zinc oxide, gallium nitride or carborundum.
According to another aspect of the present invention, provide a kind of according to the prepared led chip of above-described led chip cutting method, the edge of described led chip is " ㄣ " shape section with oblique segmentation face.Semiconductor substrate GaN wafer is produced " ㄣ " shape section in conjunction with the stealthy cutting of laser after process chip side wall erosion technique, increase the brightness of whole led chip from the aspect that increases the sidewall amount of light.
As the further prioritization scheme of this patent, described " ㄣ " shape section has coarse surface.
As the further prioritization scheme of this patent, the inclination angle of the oblique segmentation face of described " ㄣ " shape section reduces along with the increase of chip size.
Owing to adopted above technical scheme, the present invention introduces stealthy cutting technique after the sidewall corrosion, make chip generation oblique segmentation by controlling stealthy cutting position, produce " ㄣ " shape sapphire section, the light that a part is penetrated downwards is removed from sidewall, promotes the whole light of chip and takes out efficient.
Description of drawings
Fig. 1 is the profile according to led chip of the present invention, is in the front state of the rear splitting of stealthy cutting;
Fig. 2 is the profile according to led chip of the present invention, is in the complete state of sliver.
Among the figure: 1, GaN extension luminous zone; 2, Sapphire Substrate; 3, back of the body plating speculum; 4, groove; 5, the stealthy Cutting Blasting point of laser; 6, oblique segmentation face; 7, coarse surface; A, from oblique segmentation face light out; B, from stealthy cutting position light out.
Embodiment
Below in conjunction with accompanying drawing preferred embodiment of the present invention is described in detail, thereby so that advantages and features of the invention can be easier to be it will be appreciated by those skilled in the art that protection scope of the present invention is made more explicit defining.
With shown in the accompanying drawing 2, provide a kind of led chip cutting method referring to accompanying drawing 1 in this enforcement, comprised the steps:
(1) provides the Sapphire Substrate 2 with GaN extension luminescent layer 1, carry out laser scribing in Sapphire Substrate 2 fronts and form groove 4 to cut apart crystal grain, adopt wet etching method corrosion laser ablation zone in groove, to form coarse surface 7, according to traditional chip manufacturing process, finish on this basis the follow-up manufacturing of positive cartridge chip;
(2) will be coated with again back reflector 3 after Sapphire Substrate 2 attenuates, the polishing;
(3) finish above technique after, carry out the stealthy cutting of laser at Sapphire Substrate 2 back sides, the groove 4 in cutting position and Sapphire Substrate 2 fronts staggers in the horizontal direction, as shown in Figure 1;
(4) along stealthy cutting position the chip splitting is opened, has " ㄣ " shape section of oblique segmentation face 6 this moment along the formation of splitting between the stealthy cutting position at the channel bottom in Sapphire Substrate front and the Sapphire Substrate back side, as shown in Figure 2, there is shown the position selection scheme of the stealthy Cutting Blasting point 5 of laser.
Need to prove, shown in Figure 2ly just make oblique segmentation face 6 in a direction of crystal grain, with same technique, can make same oblique segmentation face 6 effects at other direction, this technique highlight effect with double.Referring to accompanying drawing 2, because the total reflection effect can't will be removed at oblique segmentation face place by light a out originally; In addition, stealthy cutting can form coarse sapphire section, equally also can increase amount of light, such as light b.
It should be noted that stealthy cutting position and the degree of depth can regulate to control size and the gradient of oblique segmentation face, adapt to different size chip demand.Large-sized chip is than small size, penetrate sideways light and the side angle is larger, thereby the inclination angle of the oblique segmentation face of " ㄣ " shape section reduces along with the increase of chip size, make milder oblique segmentation face, reduce the incidence angle of light as far as possible, its emergent light is increased.Cutting position that can be by reducing the Semiconductor substrate back side and the groove in the Semiconductor substrate front inclination angle of spacing with the oblique segmentation face that reduces " ㄣ " shape section of staggering in the horizontal direction; Perhaps the depth of cut by reducing the Semiconductor substrate back side is with the inclination angle of the oblique segmentation face that reduces " ㄣ " shape section.
Because front crystal grain cuts apart, the oblique segmentation face that this technique is made can not have influence on epitaxial loayer, electrically can not being affected of chip.Tilt broken face simultaneously much smaller than the size of chip, therefore also can not affect the front appearance of chip.In addition, the material of the Semiconductor substrate in the present embodiment also comprises zinc oxide, gallium nitride or carbofrax material.
Above execution mode only is explanation technical conceive of the present invention and characteristics; its purpose is to allow the people that is familiar with technique understand content of the present invention and is implemented; can not limit protection scope of the present invention with this, all equivalences that Spirit Essence is done according to the present invention change or modification all is encompassed in protection scope of the present invention.
Claims (7)
1. a led chip cutting method is characterized in that, comprises the steps:
(1) provides the Semiconductor substrate with GaN extension luminescent layer, carry out laser scribing in the Semiconductor substrate front and form groove to cut apart crystal grain, adopt wet etching method corrosion laser ablation zone in groove, to form coarse surface, finish on this basis follow-up chip manufacturing;
(2) will be coated with again back reflector after Semiconductor substrate attenuate, the polishing;
(3) carry out the stealthy cutting of laser at the Semiconductor substrate back side, the groove in cutting position and Semiconductor substrate front staggers in the horizontal direction;
(4) along stealthy cutting position the chip splitting is opened, have " ㄣ " shape section of oblique segmentation face this moment along the formation of splitting between the stealthy cutting position at the channel bottom in Semiconductor substrate front and the Semiconductor substrate back side.
2. led chip cutting method according to claim 1, it is characterized in that: the inclination angle of the oblique segmentation face of described " ㄣ " shape section reduces along with the increase of chip size.
3. led chip cutting method according to claim 2 is characterized in that: the depth of cut by reducing the Semiconductor substrate back side is with the inclination angle of the oblique segmentation face that reduces " ㄣ " shape section.
4. led chip cutting method according to claim 1, it is characterized in that: the material of described Semiconductor substrate comprises sapphire, zinc oxide, gallium nitride or carborundum.
5. the above prepared led chip of the described led chip cutting method of arbitrary claim of a basis, it is characterized in that: the edge of described led chip is " ㄣ " shape section with oblique segmentation face.
6. led chip according to claim 5, it is characterized in that: described " ㄣ " shape section has coarse surface.
7. according to claim 5 or 6 described led chips, it is characterized in that: the inclination angle of the oblique segmentation face of described " ㄣ " shape section reduces along with the increase of chip size.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013100048580A CN103022284A (en) | 2013-01-08 | 2013-01-08 | LED chip cutting method and LED chip manufactured by same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013100048580A CN103022284A (en) | 2013-01-08 | 2013-01-08 | LED chip cutting method and LED chip manufactured by same |
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| CN103022284A true CN103022284A (en) | 2013-04-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2013100048580A Pending CN103022284A (en) | 2013-01-08 | 2013-01-08 | LED chip cutting method and LED chip manufactured by same |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105679888A (en) * | 2016-02-05 | 2016-06-15 | 厦门市三安光电科技有限公司 | Manufacturing method of light emitting diode chip |
| CN105917460A (en) * | 2013-10-29 | 2016-08-31 | 皇家飞利浦有限公司 | Scribing wafers for semiconductor devices |
| CN110556456A (en) * | 2019-09-30 | 2019-12-10 | 湘能华磊光电股份有限公司 | High-brightness LED chip and cutting method thereof |
| CN113763816A (en) * | 2021-09-07 | 2021-12-07 | 京东方科技集团股份有限公司 | Display panel, method for making the same, and display device |
| CN115206810A (en) * | 2022-08-04 | 2022-10-18 | 马鞍山杰生半导体有限公司 | Method for manufacturing light emitting device and light emitting device |
| WO2022252138A1 (en) * | 2021-06-02 | 2022-12-08 | 泉州三安半导体科技有限公司 | Light-emitting diode and manufacturing method therefor |
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| US20060145171A1 (en) * | 2002-03-14 | 2006-07-06 | Kabushiki Kaisha Toshiba | Semiconductor light emitting element and semiconductor light emitting device |
| CN101552312A (en) * | 2009-05-12 | 2009-10-07 | 上海蓝光科技有限公司 | Method for fabricating light-emitting diode (LED) chip |
| US20110204412A1 (en) * | 2008-10-27 | 2011-08-25 | Showa Denko K.K. | Method for manufacturing semiconductor light emitting element |
| CN203055974U (en) * | 2013-01-08 | 2013-07-10 | 聚灿光电科技(苏州)有限公司 | Led chip |
-
2013
- 2013-01-08 CN CN2013100048580A patent/CN103022284A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060145171A1 (en) * | 2002-03-14 | 2006-07-06 | Kabushiki Kaisha Toshiba | Semiconductor light emitting element and semiconductor light emitting device |
| US20110204412A1 (en) * | 2008-10-27 | 2011-08-25 | Showa Denko K.K. | Method for manufacturing semiconductor light emitting element |
| CN101552312A (en) * | 2009-05-12 | 2009-10-07 | 上海蓝光科技有限公司 | Method for fabricating light-emitting diode (LED) chip |
| CN203055974U (en) * | 2013-01-08 | 2013-07-10 | 聚灿光电科技(苏州)有限公司 | Led chip |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105917460A (en) * | 2013-10-29 | 2016-08-31 | 皇家飞利浦有限公司 | Scribing wafers for semiconductor devices |
| CN105679888A (en) * | 2016-02-05 | 2016-06-15 | 厦门市三安光电科技有限公司 | Manufacturing method of light emitting diode chip |
| CN105679888B (en) * | 2016-02-05 | 2018-03-02 | 厦门市三安光电科技有限公司 | The preparation method of light-emitting diode chip for backlight unit |
| CN110556456A (en) * | 2019-09-30 | 2019-12-10 | 湘能华磊光电股份有限公司 | High-brightness LED chip and cutting method thereof |
| WO2022252138A1 (en) * | 2021-06-02 | 2022-12-08 | 泉州三安半导体科技有限公司 | Light-emitting diode and manufacturing method therefor |
| CN113763816A (en) * | 2021-09-07 | 2021-12-07 | 京东方科技集团股份有限公司 | Display panel, method for making the same, and display device |
| CN113763816B (en) * | 2021-09-07 | 2023-08-22 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof and display device |
| CN115206810A (en) * | 2022-08-04 | 2022-10-18 | 马鞍山杰生半导体有限公司 | Method for manufacturing light emitting device and light emitting device |
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Address after: 215123 Suzhou Province Industrial Park, Jiangsu new road, No. 8 Applicant after: FOCUS LIGHTINGS TECHNOLOGY CO., LTD. Address before: 215123 Suzhou Province Industrial Park, Jiangsu new road, No. 8 Applicant before: Focus Lightings Tech Inc. |
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Free format text: CORRECT: APPLICANT; FROM: FOCUS LIGHTING (SUZHOU) CO., LTD. TO: FOCUS LIGHINGS TECHNOLOGY CO., LTD. |
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Application publication date: 20130403 |