[go: up one dir, main page]

CN103033734B - Method for measuring graphene carrier mobility based on non-contact Hall effect - Google Patents

Method for measuring graphene carrier mobility based on non-contact Hall effect Download PDF

Info

Publication number
CN103033734B
CN103033734B CN201210593927.1A CN201210593927A CN103033734B CN 103033734 B CN103033734 B CN 103033734B CN 201210593927 A CN201210593927 A CN 201210593927A CN 103033734 B CN103033734 B CN 103033734B
Authority
CN
China
Prior art keywords
graphene
mobility
electromagnetic wave
hall
measuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201210593927.1A
Other languages
Chinese (zh)
Other versions
CN103033734A (en
Inventor
韩砀
王东
宁静
闫景东
柴正
张进成
郝跃
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xidian University
Original Assignee
Xidian University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xidian University filed Critical Xidian University
Priority to CN201210593927.1A priority Critical patent/CN103033734B/en
Publication of CN103033734A publication Critical patent/CN103033734A/en
Application granted granted Critical
Publication of CN103033734B publication Critical patent/CN103033734B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Carbon And Carbon Compounds (AREA)

Abstract

The invention belongs to the technical field of semiconductors, and provides a method for measuring graphene carrier mobility based on a non-contact Hall effect. Induced current and Hall current are guided in graphene by adopting an incident electromagnetic wave exciting mode; electromagnetic wave radiated by the Hall current is measured, and is compared with incident electromagnetic wave to obtain the mobility of the graphene; the projection position of excited electromagnetic wave is changed to implement multi-point measurement; and the mobilities of the graphene in different positions are compared to obtain whether the graphene has excellent consistence. The method adopts the non-contact electromagnetic wave to measure the graphene mobility, so that the time spent in measuring the graphene mobility is saved, the influence on properties of the graphene from the traditional method for producing metal probes is avoided, and whether a large amount of prepared graphene has excellent consistence can be judged; and the method has strong practicability and stronger promotion and application benefits.

Description

基于非接触式霍尔效应测量石墨烯载流子迁移率的方法Method for Measuring Carrier Mobility of Graphene Based on Non-contact Hall Effect

技术领域 technical field

本发明属于半导体技术领域,尤其涉及基于非接触式霍尔效应测量石墨烯载流子迁移率的方法。The invention belongs to the technical field of semiconductors, in particular to a method for measuring graphene carrier mobility based on a non-contact Hall effect.

背景技术 Background technique

石墨烯材料是一种碳基二维晶体,是目前已知最轻最薄的材料,单层仅原子厚度,它具有极其优异的物理化学性质,比如极高的载流子迁移率(理论估计超过200000cm2V-1s-1,是Si的数百倍),超强的机械性能(杨氏模量约1000GP),极高的比表面积和极好的气敏特性,极高的透明性和柔韧性,而且它与衬底不存在失配问题,可以与Si基器件工艺完全兼容,具有突出的产业优势。因此,石墨烯的出现为产业界和科技界带来曙光,它是最被看好的替代Si成为下一代基础半导体材料的新材料。Graphene material is a carbon-based two-dimensional crystal. It is the lightest and thinnest material known so far. The single layer is only atomically thick. It has extremely excellent physical and chemical properties, such as extremely high carrier mobility (theoretical estimation More than 200,000cm 2 V -1 s -1 , hundreds of times that of Si), super mechanical properties (Young's modulus about 1000GP), extremely high specific surface area and excellent gas-sensing properties, extremely high transparency And flexibility, and there is no mismatch between it and the substrate, it can be fully compatible with Si-based device technology, and has outstanding industrial advantages. Therefore, the emergence of graphene has brought dawn to the industry and science and technology circles, and it is the most promising new material to replace Si as the next-generation basic semiconductor material.

为了提高石墨烯制备的一致性,通常在制备结束后需要对石墨烯的迁移率进行测试,常规的范德堡法原理简单,理论上适用于测量任意形状样品(要求材料为近似二维材料,即厚度远小于长度宽度)测量误差小。但是由于需要制作欧姆接触、金属焊点,使得石墨烯材料被破环,难以进行其他测试。而且由于单层石墨烯厚度太薄,掺杂石墨烯制备难以取得良好的一致性,石墨烯材料跟金属材料间的功函数差异较大,不容易制成良好的欧姆接触,再加上石墨烯上电极制作昂贵,使得范德堡法并不适合表征石墨烯。所以,为了高效的表征石墨烯,判定大量制备石墨烯是否具有良好的一致性,提出了采用非接触法测量迁移率。In order to improve the consistency of graphene preparation, it is usually necessary to test the mobility of graphene after the preparation is completed. The conventional van der Pauw method has a simple principle and is theoretically suitable for measuring samples of any shape (the material is required to be an approximately two-dimensional material, That is, the thickness is much smaller than the length and width) and the measurement error is small. However, due to the need to make ohmic contacts and metal solder joints, the graphene material is damaged and it is difficult to perform other tests. Moreover, because the thickness of single-layer graphene is too thin, it is difficult to obtain good consistency in the preparation of doped graphene. The work function difference between graphene material and metal material is large, and it is not easy to make a good ohmic contact. The upper electrode is expensive to make, making the van der Pauw method unsuitable for characterizing graphene. Therefore, in order to efficiently characterize graphene and determine whether a large amount of graphene has good consistency, a non-contact method is proposed to measure the mobility.

发明内容 Contents of the invention

本发明提供了基于非接触式霍尔效应测量石墨烯载流子迁移率的方法,旨在解决现有技术提供的测试石墨烯迁移率的方法,使石墨烯材料被破环,难以进行其他测试,同时测试成本较高,操作复杂的问题。The present invention provides a method for measuring the mobility of graphene carriers based on the non-contact Hall effect, aiming to solve the method for testing the mobility of graphene provided by the prior art, which makes the graphene material damaged and difficult to perform other tests , At the same time, the test cost is high and the operation is complicated.

本发明的目的在于提供基于非接触式霍尔效应测量石墨烯载流子迁移率的方法,该方法采用入射电磁波激发的方式,在石墨烯中引入感应电流和霍尔电流,通过测量霍尔电流辐射出的电磁波,并与入射电磁波相比较,得出石墨烯的迁移率,再改变激发电磁波的投射位置,进行多点测量。The object of the present invention is to provide a method for measuring graphene carrier mobility based on the non-contact Hall effect. The method uses incident electromagnetic wave excitation to introduce induced current and Hall current into graphene. The radiated electromagnetic wave is compared with the incident electromagnetic wave to obtain the mobility of graphene, and then the projected position of the excited electromagnetic wave is changed for multi-point measurement.

进一步,该方法的具体实现步骤如下:Further, the specific implementation steps of the method are as follows:

步骤一,把铜圆片放置在载物台上,对准电磁波发射器,利用测试设备自动读取铜片的反射能量,并获取的反射能量调整设备参数;Step 1, place the copper disc on the stage, align it with the electromagnetic wave transmitter, use the test equipment to automatically read the reflected energy of the copper disc, and adjust the equipment parameters with the acquired reflected energy;

步骤二,把转移到衬底上的石墨烯放置在载物台上,选择内置的响应测试衬底;Step 2, place the graphene transferred onto the substrate on the stage, and select the built-in response test substrate;

步骤三,对平衡桥电路施加反相信号,手动调节探测器,使探测到的Hall值达到最小;Step 3, apply an anti-phase signal to the balance bridge circuit, and manually adjust the detector to minimize the detected Hall value;

步骤四,在零磁场下,通过反射电磁波测量石墨烯面电阻和载流子浓度,测量值将用于迁移率的测量;Step 4, under zero magnetic field, measure graphene surface resistance and carrier concentration by reflecting electromagnetic waves, and the measured values will be used for mobility measurement;

步骤五,保持磁感应强度在5000-10000G,测量石墨烯Hall激发电流辐射的Hall能量,并由此计算得到石墨烯迁移率;Step five, keep the magnetic induction at 5000-10000G, measure the Hall energy radiated by the graphene Hall excitation current, and calculate the graphene mobility from it;

步骤六,移动衬底,测量其他位置石墨烯迁移率。Step six, move the substrate, and measure the mobility of graphene at other positions.

进一步,在步骤一中,由反射能量测量出的铜圆片电阻值不大于10ohms。Further, in step 1, the resistance value of the copper disc measured by reflected energy is not greater than 10 ohms.

进一步,在步骤二中,使用衬底须不小于2英寸。Further, in step two, the substrate used must be no smaller than 2 inches.

进一步,在步骤六中,通过比较不同位置石墨烯迁移率,可得到石墨烯是否具有良好的一致性。Further, in step six, by comparing the mobility of graphene at different positions, it can be obtained whether the graphene has a good consistency.

本发明提供的基于非接触式霍尔效应测量石墨烯载流子迁移率的方法,采用入射电磁波激发的方式,在石墨烯中引入感应电流和霍尔电流,通过测量霍尔电流辐射出的电磁波,并与入射电磁波相比较,得出石墨烯的迁移率,再改变激发电磁波的投射位置,进行多点测量,并通过比较不同位置石墨烯迁移率,可得到石墨烯是否具有良好的一致性,该方法采用非接触式电磁波测量石墨烯迁移率,节省了测量石墨烯迁移率的时间,避免了传统方法制作金属探针对石墨烯性质的影响,可判定大量制备石墨烯是否具有良好的一致性,实用性强,具有较强的推广与应用价值。The method for measuring the carrier mobility of graphene based on the non-contact Hall effect provided by the present invention adopts the method of incident electromagnetic wave excitation, introduces induced current and Hall current into graphene, and measures the electromagnetic wave radiated by the Hall current , and compared with the incident electromagnetic wave, the mobility of graphene is obtained, and then the projected position of the excited electromagnetic wave is changed to perform multi-point measurement, and by comparing the mobility of graphene at different positions, it can be obtained whether the graphene has good consistency. This method uses non-contact electromagnetic waves to measure the mobility of graphene, which saves the time for measuring the mobility of graphene, avoids the influence of the traditional method of making metal probes on the properties of graphene, and can determine whether a large amount of graphene has good consistency. , strong practicability, and strong promotion and application value.

附图说明Description of drawings

图1是本发明实施例提供的基于非接触式霍尔效应测量石墨烯载流子迁移率的方法的实现流程图;Fig. 1 is the implementation flowchart of the method for measuring graphene carrier mobility based on the non-contact Hall effect provided by the embodiment of the present invention;

图2是本发明实施例提供的基于非接触式霍尔效应测量石墨烯载流子迁移率的方法的原理示意图。Fig. 2 is a schematic diagram of the principle of the method for measuring the carrier mobility of graphene based on the non-contact Hall effect provided by the embodiment of the present invention.

具体实施方式 detailed description

为了使本发明的目的、技术方案及优点更加清楚明白,以下结合附图及实施例,对本发明进行进一步的详细说明。应当理解,此处所描述的具体实施例仅仅用以解释本发明,并不用于限定发明。In order to make the purpose, technical solution and advantages of the present invention more clear, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the invention.

本发明的目的在于提供基于非接触式霍尔效应测量石墨烯载流子迁移率的方法,该方法采用入射电磁波激发的方式,在石墨烯中引入感应电流和霍尔电流,通过测量霍尔电流辐射出的电磁波,并与入射电磁波相比较,得出石墨烯的迁移率,再改变激发电磁波的投射位置,进行多点测量。The object of the present invention is to provide a method for measuring graphene carrier mobility based on the non-contact Hall effect. The method uses incident electromagnetic wave excitation to introduce induced current and Hall current into graphene. The radiated electromagnetic wave is compared with the incident electromagnetic wave to obtain the mobility of graphene, and then the projected position of the excited electromagnetic wave is changed for multi-point measurement.

图1示出了本发明实施例提供的基于非接触式霍尔效应测量石墨烯载流子迁移率的方法的实现流程。Fig. 1 shows the implementation process of the method for measuring the carrier mobility of graphene based on the non-contact Hall effect provided by the embodiment of the present invention.

如图1所示,在本发明实施例中,该方法的具体实现步骤如下:As shown in Figure 1, in the embodiment of the present invention, the specific implementation steps of the method are as follows:

步骤一,把铜圆片放置在载物台上,对准电磁波发射器,利用测试设备自动读取铜片的反射能量,并获取的反射能量调整设备参数;Step 1, place the copper disc on the stage, align it with the electromagnetic wave transmitter, use the test equipment to automatically read the reflected energy of the copper disc, and adjust the equipment parameters with the acquired reflected energy;

步骤二,把转移到衬底上的石墨烯放置在载物台上,选择内置的响应测试衬底;Step 2, place the graphene transferred onto the substrate on the stage, and select the built-in response test substrate;

步骤三,对平衡桥电路施加反相信号,手动调节探测器,使探测到的Hall值达到最小;Step 3, apply an anti-phase signal to the balance bridge circuit, and manually adjust the detector to minimize the detected Hall value;

步骤四,在零磁场下,通过反射电磁波测量石墨烯面电阻和载流子浓度,测量值将用于迁移率的测量;Step 4, under zero magnetic field, measure graphene surface resistance and carrier concentration by reflecting electromagnetic waves, and the measured values will be used for mobility measurement;

步骤五,保持磁感应强度在5000-10000G,测量石墨烯Hall激发电流辐射的Hall能量,并由此计算得到石墨烯迁移率;Step five, keep the magnetic induction at 5000-10000G, measure the Hall energy radiated by the graphene Hall excitation current, and calculate the graphene mobility from it;

步骤六,移动衬底,测量其他位置石墨烯迁移率。Step six, move the substrate, and measure the mobility of graphene at other positions.

在本发明实施例中,在步骤一中,由反射能量测量出的铜圆片电阻值不大于10ohms。In the embodiment of the present invention, in step 1, the resistance value of the copper disc measured by reflected energy is not greater than 10 ohms.

在本发明实施例中,在步骤二中,使用衬底须不小于2英寸。In the embodiment of the present invention, in the second step, the used substrate must not be smaller than 2 inches.

在本发明实施例中,在步骤六中,通过比较不同位置石墨烯迁移率,可得到石墨烯是否具有良好的一致性。In the embodiment of the present invention, in step 6, by comparing the mobility of graphene at different positions, it can be obtained whether the graphene has a good consistency.

下面结合附图及具体实施例对本发明的应用原理作进一步描述。The application principle of the present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

本发明的目的在于克服接触式测量的不足,提供一种基于电磁波激发的非接触式迁移率测量方法,可以免除探针,方便的测量石墨烯迁移率。另外其多点测量的优势,可以用来表征石墨烯的均匀性。The purpose of the present invention is to overcome the shortcomings of contact measurement, and provide a non-contact mobility measurement method based on electromagnetic wave excitation, which can eliminate probes and conveniently measure graphene mobility. In addition, its advantage of multi-point measurement can be used to characterize the uniformity of graphene.

实现本发明目的技术关键是:采用入射电磁波激发的方式,在石墨烯中引入感应电流和霍尔电流,通过测量霍尔电流辐射出的电磁波,并与入射电磁波相比较,得出石墨烯的迁移率。改变激发电磁波的投射位置,进行多点测量。其实现步骤包括如下:The technical key to realize the purpose of the present invention is: adopt the mode of incident electromagnetic wave excitation, introduce induction current and Hall current in graphene, measure the electromagnetic wave that Hall current radiates, and compare with incident electromagnetic wave, obtain the migration of graphene Rate. Change the projected position of the excited electromagnetic wave to perform multi-point measurement. Its implementation steps include the following:

(1)把铜圆片放置在载物台上,对准电磁波发射器,测试设备自动读取铜片的反射能量,以此调整设备参数,补偿测试过程中可能出现的能量波动。由反射能量测量出的铜圆片电阻值不大于10ohms;(1) Place the copper disc on the stage and align it with the electromagnetic wave transmitter. The test equipment automatically reads the reflected energy of the copper disc, so as to adjust the equipment parameters and compensate for the energy fluctuations that may occur during the test. The resistance value of the copper disc measured by reflected energy is not greater than 10ohms;

(2)把转移到衬底上的石墨烯放置在载物台上,选择软件内置的相应测试衬底,使用衬底须不小于2英寸;(2) Place the graphene transferred onto the substrate on the stage, and select the corresponding test substrate built into the software, and the substrate used must not be smaller than 2 inches;

(3)系统对平衡桥电路施加反相信号,手动调节探测器,使探测到的Hall值达到最小,尽可能的抵消噪声;(3) The system applies an anti-phase signal to the balance bridge circuit, and manually adjusts the detector to minimize the detected Hall value and cancel the noise as much as possible;

(4)在零磁场下,通过反射电磁波测量石墨烯面电阻和载流子浓度,测量值将用于迁移率的测量;(4) Under zero magnetic field, the surface resistance and carrier concentration of graphene are measured by reflecting electromagnetic waves, and the measured values will be used for the measurement of mobility;

(5)保持磁感应强度在5000-10000G,测量石墨烯Hall激发电流辐射的Hall能量,由此计算得到石墨烯迁移率;(5) Keep the magnetic induction at 5000-10000G, measure the Hall energy radiated by the graphene Hall excitation current, and calculate the graphene mobility from this;

(6)移动衬底,测量其他位置石墨烯迁移率,不同位置比较得到材料是否均匀。(6) Move the substrate, measure the mobility of graphene at other positions, and compare different positions to find out whether the material is uniform.

用上述方法测量石墨烯迁移率其特征在于:迁移率的测量不需要使用金属探针接触,方便测量材料不同位置的迁移率。Using the above method to measure the mobility of graphene is characterized in that the measurement of the mobility does not need to be contacted with a metal probe, which is convenient for measuring the mobility of different positions of the material.

本发明具有如下优点:The present invention has the following advantages:

1.由于采用非接触式电磁波测量石墨烯迁移率,省去了探针制作,避免了材料破坏。1. Due to the use of non-contact electromagnetic waves to measure the mobility of graphene, the fabrication of probes is omitted and material damage is avoided.

2.由于采用非接触式电磁波测量石墨烯迁移率,可以方便的测量不同位置的迁移率,表征石墨烯制备均匀性。2. Due to the use of non-contact electromagnetic waves to measure the mobility of graphene, it is convenient to measure the mobility of different positions and characterize the uniformity of graphene preparation.

参照图1,本发明给出如下实施例:With reference to Fig. 1, the present invention provides following embodiment:

实施例1:Example 1:

本发明的实现步骤如下:The realization steps of the present invention are as follows:

步骤1,利用铜圆片调整设备参数。Step 1, use the copper disc to adjust the equipment parameters.

把铜圆片放置在载物台上,对准电磁波发射器,测试设备自动读取铜片的反射能量,由反射能量测量出的铜圆片电阻值不大于10ohms。Place the copper disc on the stage and align it with the electromagnetic wave transmitter. The test equipment automatically reads the reflected energy of the copper disc. The resistance value of the copper disc measured by the reflected energy is not greater than 10ohms.

步骤2,调节反射Hall值。Step 2, adjust the reflection Hall value.

把石墨烯转移到4英寸Si衬底上,放置在载物台上,对准电磁波发射器,调整反射Hall值到最小。Transfer the graphene to a 4-inch Si substrate, place it on the stage, align the electromagnetic wave emitter, and adjust the reflection Hall value to the minimum.

步骤3,测量石墨烯面电阻和载流子浓度。Step 3, measuring graphene surface resistance and carrier concentration.

在零磁场下,通过反射电磁波测量石墨烯面电阻和载流子浓度。Under zero magnetic field, graphene surface resistance and carrier concentration were measured by reflecting electromagnetic waves.

步骤4,测量石墨烯迁移率。Step 4, measuring graphene mobility.

保持磁感应强度在5000G,测量石墨烯Hall激发电流辐射的Hall能量,系统自动计算出石墨烯迁移率。Keep the magnetic induction at 5000G, measure the Hall energy radiated by the graphene Hall excitation current, and the system automatically calculates the graphene mobility.

步骤5,移动衬底,测量其他位置迁移率。Step 5, move the substrate, and measure the mobility at other positions.

实施例2:Example 2:

本发明的实现步骤如下:The realization steps of the present invention are as follows:

步骤A,利用铜圆片调整设备参数。Step A, using the copper disc to adjust the device parameters.

把铜圆片放置在载物台上,对准电磁波发射器,测试设备自动读取铜片的反射能量,由反射能量测量出的铜圆片电阻值不大于10ohms。Place the copper disc on the stage and align it with the electromagnetic wave transmitter. The test equipment automatically reads the reflected energy of the copper disc. The resistance value of the copper disc measured by the reflected energy is not greater than 10ohms.

步骤B,调节反射Hall值。Step B, adjusting the reflective Hall value.

把石墨烯转移到3英寸SiO2衬底上,放置在载物台上,对准电磁波发射器,调整反射Hall值到最小。Transfer the graphene to a 3-inch SiO 2 substrate, place it on the stage, align the electromagnetic wave emitter, and adjust the reflection Hall value to the minimum.

步骤C,测量石墨烯面电阻和载流子浓度。Step C, measuring graphene surface resistance and carrier concentration.

在零磁场下,通过反射电磁波测量石墨烯面电阻和载流子浓度。Under zero magnetic field, graphene surface resistance and carrier concentration were measured by reflecting electromagnetic waves.

步骤D,测量石墨烯迁移率。Step D, measuring graphene mobility.

保持磁感应强度在7000G,测量石墨烯Hall激发电流辐射的Hall能量,系统自动计算出石墨烯迁移率。Keep the magnetic induction at 7000G, measure the Hall energy radiated by the graphene Hall excitation current, and the system automatically calculates the graphene mobility.

步骤E,移动衬底,测量其他位置迁移率。Step E, moving the substrate, and measuring mobility at other positions.

实施例3:Example 3:

本发明的实现步骤如下:The realization steps of the present invention are as follows:

步骤1,利用铜圆片调整设备参数。Step 1, use the copper disc to adjust the equipment parameters.

把铜圆片放置在载物台上,对准电磁波发射器,测试设备自动读取铜片的反射能量,由反射能量测量出的铜圆片电阻值不大于10ohms。Place the copper disc on the stage and align it with the electromagnetic wave transmitter. The test equipment automatically reads the reflected energy of the copper disc. The resistance value of the copper disc measured by the reflected energy is not greater than 10ohms.

步骤2,调节反射Hall值。Step 2, adjust the reflection Hall value.

把石墨烯转移到2英寸GaN衬底上,放置在载物台上,对准电磁波发射器,调整反射Hall值到最小。Transfer the graphene to a 2-inch GaN substrate, place it on the stage, align the electromagnetic wave emitter, and adjust the reflection Hall value to the minimum.

步骤3,测量石墨烯面电阻和载流子浓度。Step 3, measuring graphene surface resistance and carrier concentration.

在零磁场下,通过反射电磁波测量石墨烯面电阻和载流子浓度。Under zero magnetic field, graphene surface resistance and carrier concentration were measured by reflecting electromagnetic waves.

步骤4,测量石墨烯迁移率。Step 4, measuring graphene mobility.

保持磁感应强度在10000G,测量石墨烯Hall激发电流辐射的Hall能量,系统自动计算出石墨烯迁移率。Keep the magnetic induction at 10000G, measure the Hall energy radiated by the graphene Hall excitation current, and the system automatically calculates the graphene mobility.

步骤5,移动衬底,测量其他位置迁移率。Step 5, move the substrate, and measure the mobility at other positions.

本发明公开了一种基于非接触式霍尔效应的石墨烯载流子迁移率测量方法,主要解决非接触测量石墨烯迁移率的问题。其测量步骤是:(1)把Cu圆片放置在载物台上,对准电磁波发射器,测试设备自动读取铜片的反射能量,以此调整设备参数,补偿测试过程中可能出现的能量波动。由反射能量测量出的Cu圆片电阻值不大于10ohms;(2)把转移到衬底上的石墨烯放置在载物台上,选择软件内置的相应测试衬底,使用衬底须不小于2英寸;(3)系统对平衡桥电路施加反相信号,手动调节探测器,使探测到的Hall值达到最小,尽可能的抵消噪声;(4)在0磁场下,通过反射电磁波测量石墨烯面电阻和载流子浓度,测量值将用于迁移率的测量;(5)保持磁感应强度在100-1000G,测量石墨烯Hall激发电流辐射的Hall能量,由此计算得到石墨烯迁移率;(6)移动衬底,测量其他位置石墨烯迁移率,不同位置比较得到材料是否均匀。本发明节省了测量石墨烯迁移率的时间,避免了制作金属探针对石墨烯性质的影响。The invention discloses a non-contact Hall effect-based graphene carrier mobility measurement method, which mainly solves the problem of non-contact measurement of graphene mobility. The measurement steps are: (1) Place the Cu disc on the stage and align it with the electromagnetic wave transmitter. The test equipment automatically reads the reflected energy of the copper sheet, so as to adjust the equipment parameters and compensate for the energy that may occur during the test. fluctuation. The resistance value of the Cu disc measured by the reflected energy is not greater than 10ohms; (2) Place the graphene transferred to the substrate on the stage, select the corresponding test substrate built into the software, and the used substrate must not be less than 2 Inch; (3) The system applies an anti-phase signal to the balance bridge circuit, and manually adjusts the detector to minimize the detected Hall value and offset the noise as much as possible; (4) Measure the graphene surface by reflecting electromagnetic waves under 0 magnetic field Resistance and carrier concentration, the measured value will be used to measure the mobility; (5) Keep the magnetic induction at 100-1000G, measure the Hall energy of the graphene Hall excitation current radiation, and calculate the graphene mobility from this; (6 ) to move the substrate, measure the graphene mobility at other positions, and compare different positions to find out whether the material is uniform. The invention saves the time for measuring the mobility of graphene and avoids the influence of making metal probes on the properties of graphene.

本发明实施例提供的基于非接触式霍尔效应测量石墨烯载流子迁移率的方法,采用入射电磁波激发的方式,在石墨烯中引入感应电流和霍尔电流,通过测量霍尔电流辐射出的电磁波,并与入射电磁波相比较,得出石墨烯的迁移率,再改变激发电磁波的投射位置,进行多点测量,并通过比较不同位置石墨烯迁移率,可得到石墨烯是否具有良好的一致性,该方法采用非接触式电磁波测量石墨烯迁移率,节省了测量石墨烯迁移率的时间,避免了传统方法制作金属探针对石墨烯性质的影响,可判定大量制备石墨烯是否具有良好的一致性,实用性强,具有较强的推广与应用价值。The method for measuring the carrier mobility of graphene based on the non-contact Hall effect provided by the embodiment of the present invention adopts the method of incident electromagnetic wave excitation to introduce induced current and Hall current into graphene, and radiate out by measuring the Hall current. The electromagnetic wave, and compared with the incident electromagnetic wave, the mobility of graphene is obtained, and then the projected position of the excited electromagnetic wave is changed, and multi-point measurement is performed, and by comparing the mobility of graphene at different positions, it can be obtained whether the graphene has a good consistency. This method uses non-contact electromagnetic waves to measure the mobility of graphene, which saves the time for measuring the mobility of graphene, avoids the influence of the traditional method of making metal probes on the properties of graphene, and can determine whether large-scale preparation of graphene has good properties. Consistency, strong practicability, and strong promotion and application value.

以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明的保护范围之内。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present invention should be included in the protection of the present invention. within range.

Claims (1)

1. the method for graphene carrier mobility is measured based on contactless Hall effect, it is characterized in that, the mode that the method adopts incident electromagnetic wave to excite, induction current and Hall current is introduced in Graphene, by measuring the electromagnetic wave that Hall current gives off, and compared with incident electromagnetic wave, draw the mobility of Graphene, change again and excite electromagnetic launching position, carry out multimetering;
The specific implementation step of the method is as follows:
Step one, is placed on copper coin sheet on objective table, aims at electromagnetic wave transmitter, utilizes testing apparatus automatically to read the reflected energy of copper sheet, and the reflected energy adjustment device parameter obtained;
Step 2, is placed on the Graphene transferred on substrate on objective table, selects built-in response test substrate;
Step 3, apply inversion signal to balanced bridge circuit, manual adjustments detector, makes the Hall value detected reach minimum;
Step 4, under zero magnetic field, by reflected electromagnetic wave measurement Graphene surface resistance and carrier concentration, measured value will be used for the measurement of mobility;
Step 5, keeps magnetic induction density at 5000-10000G, measures the Hall energy of Graphene Hall excitation current radiation, and calculates Graphene mobility thus;
Step 6, moving substrate, measures other position Graphene mobilities;
In step one, the copper coin sheet resistance values measured by reflected energy is not more than 10ohms;
In step 2, use substrate must be not less than 2 inches;
In step 6, by comparing diverse location Graphene mobility, Graphene can be obtained whether there is good consistance.
CN201210593927.1A 2012-12-31 2012-12-31 Method for measuring graphene carrier mobility based on non-contact Hall effect Expired - Fee Related CN103033734B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201210593927.1A CN103033734B (en) 2012-12-31 2012-12-31 Method for measuring graphene carrier mobility based on non-contact Hall effect

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201210593927.1A CN103033734B (en) 2012-12-31 2012-12-31 Method for measuring graphene carrier mobility based on non-contact Hall effect

Publications (2)

Publication Number Publication Date
CN103033734A CN103033734A (en) 2013-04-10
CN103033734B true CN103033734B (en) 2015-05-27

Family

ID=48020826

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210593927.1A Expired - Fee Related CN103033734B (en) 2012-12-31 2012-12-31 Method for measuring graphene carrier mobility based on non-contact Hall effect

Country Status (1)

Country Link
CN (1) CN103033734B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107037284B (en) * 2017-03-29 2019-04-23 中国科学院苏州纳米技术与纳米仿生研究所 A method for measuring the mobility of graphene microdomains using semiconductor as substrate
US11041827B2 (en) * 2019-04-12 2021-06-22 International Business Machines Corporation Carrier-resolved photo-hall system and method
CN111983532A (en) * 2020-07-30 2020-11-24 南昌工程学院 Electromagnetic testing system and testing device for graphene device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59178739A (en) * 1983-03-30 1984-10-11 Hitachi Ltd Device for measuring carrier mobility
SU1465750A1 (en) * 1987-05-27 1989-03-15 Войсковая часть 67947 Method of measuring concentration and mobility of current carriers in semiconductors
CN1531656A (en) * 2001-05-03 2004-09-22 �պ��ٵ��ӹ�˾ Method and apparatus for non-destructive measurement and profiling of sheet materials
CN1971295A (en) * 2005-11-21 2007-05-30 杨瑞霞 A novel method for measuring current carrier mobility of magnetic semiconductor
CN101740434A (en) * 2008-11-21 2010-06-16 索尼株式会社 Nondestructive testing method for oxide semiconductor layer and method for making oxide semiconductor layer
CN102313835A (en) * 2011-07-21 2012-01-11 河北工业大学 Method for measuring electric parameter of gallium arsenide pseudomorphic HEMT (high electron mobility transistor) material

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59178739A (en) * 1983-03-30 1984-10-11 Hitachi Ltd Device for measuring carrier mobility
SU1465750A1 (en) * 1987-05-27 1989-03-15 Войсковая часть 67947 Method of measuring concentration and mobility of current carriers in semiconductors
CN1531656A (en) * 2001-05-03 2004-09-22 �պ��ٵ��ӹ�˾ Method and apparatus for non-destructive measurement and profiling of sheet materials
CN1971295A (en) * 2005-11-21 2007-05-30 杨瑞霞 A novel method for measuring current carrier mobility of magnetic semiconductor
CN101740434A (en) * 2008-11-21 2010-06-16 索尼株式会社 Nondestructive testing method for oxide semiconductor layer and method for making oxide semiconductor layer
CN102313835A (en) * 2011-07-21 2012-01-11 河北工业大学 Method for measuring electric parameter of gallium arsenide pseudomorphic HEMT (high electron mobility transistor) material

Also Published As

Publication number Publication date
CN103033734A (en) 2013-04-10

Similar Documents

Publication Publication Date Title
KR101725595B1 (en) Polishing method
CN102049732B (en) Silicon wafer edge film thickness measuring method
CN101131314B (en) Nondestructive thickness measuring method for nickel coat on Fe substrate
TWI866587B (en) Compensation for substrate doping in edge reconstruction for in-situ electromagnetic inductive monitoring
CN103033734B (en) Method for measuring graphene carrier mobility based on non-contact Hall effect
CN115464556B (en) Metal film thickness measuring method and chemical mechanical polishing equipment
CN107817054B (en) An infrared imager temperature measurement method for components in a vacuum cavity
CN108267102B (en) Segment difference detection equipment and segment difference detection method
CN110718478A (en) Wafer film measuring method and device
CN106643587B (en) A kind of thickness of metal film measurement method based on microwave transmission method
JP2012231040A (en) Temperature calibration apparatus and temperature calibration method
CN111157580A (en) A system and method for measuring electromagnetic parameters of high temperature materials based on fixture de-embedding
Reznik et al. Quantitative determination of sheet resistance of semiconducting films by microwave near-field probing
CN120194602A (en) Measuring instrument and measuring method for thickness of wafer metal film
CN110568063A (en) A method and system for non-destructive testing of multi-frequency excitation eddy current field phase gradient spectrum
CN113932700B (en) Thermal barrier coating bonding layer thickness measuring method based on impedance coordinate transformation
CN108802098B (en) Measuring device and measuring method for thermal conductivity of continuous silicon carbide film
CN109708793B (en) Stress test system and test method
Qu et al. High-precision resistivity measurement of silicon wafer under unstable lift-off distance using inductive and laser sensors-integrated probe
CN109115830B (en) Nondestructive testing device and method for three-dimensional anisotropic thermal conductivity of material
CN105891746B (en) A kind of ferromagnetic conductor relative permeability detection method and system based on Kelvin effect
CN103398662A (en) Method and device for measuring thickness of 10 to 100 Mum solid thin films
CN209117761U (en) A kind of test device for extracting conductive film surface conductivity based on electromagnetic field near field
Siblini et al. Determination of initial magnetic permeability of YIG thin films using the current sheet method
CN106546619A (en) A kind of grinding and polishing damage measure method of cadmium-zinc-teiluride base mercury cadmium telluride thin film

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150527