CN103096528B - Preparation method for silicon nitride heating body - Google Patents
Preparation method for silicon nitride heating body Download PDFInfo
- Publication number
- CN103096528B CN103096528B CN201310003718.1A CN201310003718A CN103096528B CN 103096528 B CN103096528 B CN 103096528B CN 201310003718 A CN201310003718 A CN 201310003718A CN 103096528 B CN103096528 B CN 103096528B
- Authority
- CN
- China
- Prior art keywords
- silicon nitride
- biscuit
- temperature
- boron nitride
- sintering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 45
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 238000010438 heat treatment Methods 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title abstract 3
- 238000005245 sintering Methods 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 29
- 235000015895 biscuits Nutrition 0.000 claims abstract description 28
- 239000000843 powder Substances 0.000 claims abstract description 28
- 229910052582 BN Inorganic materials 0.000 claims abstract description 22
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000003825 pressing Methods 0.000 claims abstract description 19
- 239000000203 mixture Substances 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 15
- 239000007791 liquid phase Substances 0.000 claims abstract description 12
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000002156 mixing Methods 0.000 claims abstract description 9
- 239000012298 atmosphere Substances 0.000 claims abstract description 6
- 238000001035 drying Methods 0.000 claims abstract description 6
- 238000007731 hot pressing Methods 0.000 claims abstract description 6
- 239000002002 slurry Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 25
- 238000004519 manufacturing process Methods 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 238000009472 formulation Methods 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 6
- 239000010439 graphite Substances 0.000 claims description 6
- 239000003595 mist Substances 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 230000014759 maintenance of location Effects 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract description 4
- 238000005469 granulation Methods 0.000 abstract description 2
- 230000003179 granulation Effects 0.000 abstract description 2
- 238000002955 isolation Methods 0.000 abstract 2
- 238000005507 spraying Methods 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 description 7
- 239000000654 additive Substances 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 3
- 238000007493 shaping process Methods 0.000 description 3
- 206010027146 Melanoderma Diseases 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- -1 TiN Chemical class 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 229920002521 macromolecule Polymers 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000010583 slow cooling Methods 0.000 description 2
- 206010037660 Pyrexia Diseases 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 238000010000 carbonizing Methods 0.000 description 1
- 238000005255 carburizing Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Abstract
The invention relates to a preparation method for a silicon nitride heating body. The preparation method comprises that silicon nitride powder and small amount of high-temperature liquid-phase sintering aid are arranged into absolute ethyl alcohol to be mixed, the mixture is made into a formula material through spraying granulation 10-72 hours after mixing; a metal heating wire is embedded into the formula material, the formula material is formed by drying and pressing; then the formula material is further formed by pressing through isostatic cool pressing of 180-220Mpa, pressure is maintained for 3-10 minutes, and the material is formed into a biscuit; then a boron nitride isolation layer is evenly coated on the surface of the biscuit, the biscuit is dried; the biscuit is sintered through hot pressing, sintering pressure is 20-30MPa, sintering temperature is from 1600-1900 DEG C, heat insulation time is 0.5-4 hours, and a blank is formed; and finally, the blank is arranged into a vacuum atmosphere furnace, constant temperature of 1300-1600 DEG C is kept for 10-24 hours, and then the blank is naturally cooled to room temperature. The boron nitride isolation layer is thick slurry formed by mixing the absolute ethyl alcohol with a mixture prepared by mixing the boron nitride powder and silicon nitride powder.
Description
The application is divisional application, the application number of original application: 201010582116.2, the applying date: 2010-12-09, invention and created name: the manufacture method of silicon nitride heat generating body.
Technical field
The present invention relates to the technical field of the manufacture method of electric heating element, specifically a kind of manufacture method of silicon nitride heat generating body.
Background technology
Silicon nitride is a kind of covalent bond pottery, pure Si
3n
4powder cannot sinter, and must add a small amount of sintering agent and form liquid phase at high temperature, carry out liquid-phase sintering, just can obtain the silicon nitride material of excellent performance.Conventional additive comprises: Al
2o
3, MgO, SiO
2deng metal oxide, Y
2o
3, La
2o
3, CeO
2deng rare earth oxide, and AlN, Mg
3n
2, the nitride such as TiN, ZrN.High-performance silicon nitride ceramics has the excellent electricity such as insulation, high-strength, high temperature resistant, resistance to oxidation, heat shock resistance and high-termal conductivity, calorifics and mechanical property.
Silicon nitride heating plate is a kind of device in conjunction with high-performance silicon nitride ceramics matrix and long-life powerful high-temperature metal heating wire.There is volume little, the large and heat efficiency high of power, while be also proved to be a kind of safe and reliable heating system.After direct-electrifying, temperature is done on surface can reach 1200 degrees Celsius, and working life reaches more than 5000 hours.High-temperature metal heating wire material comprises, the materials such as tungsten filament, molybdenum filament and various tungsten-molybdenum alloy silks.
At present, more there is the phenomenon of carburizing in the silicon nitride heating sheet material in market, surface distributed has the phenomenons such as bulk blackspot, black patch from the appearance, and color and luster is uneven.Pure Si
3n
4the true qualities of dense sintering material should be canescence, and existing product exists matrix color blackout mostly, and surface uniform or uneven distribution pore, more have surface distributed to have the phenomenons such as bulk blackspot, black patch.This mainly in hot pressed sintering process because biscuit directly contacts with graphite, carbon infiltrates along liquid channel, dissolves in liquid phase, or reacts with silicon nitride and produce.The infiltration of carbon can the insulation property of deteriorated material, reduce safety and reliability.Simultaneously because the hot pressed sintering time is short, rely on mechanical pressure to strengthen fine and close effect, there is the microstructure that boundary stress is large, liquid phase crystallization is insufficient in the material obtained, affects the useful life of basis material.
Summary of the invention
The technical problem to be solved in the present invention is to provide the manufacture method of the simple silicon nitride heat generating body of a kind of technique, to produce the silicon nitride heat generating body with higher reliability and fail safe.
For solving the problems of the technologies described above, the manufacture method of silicon nitride heat generating body provided by the invention, comprising:
Step 1, silicon nitride powder and high-temperature liquid-phase sintering agent inserted in absolute ethyl alcohol by weight 0.96:0.04 to 0.80:0.20 mix, after batch mixing 10-72 hour, make formulation material through mist projection granulating;
Step 2, metal heating wire is imbedded in described formulation material dry-pressing formed, then compressing further by the isostatic cool pressing of 180-220MPa, and pressurize 3-10 minute, to make biscuit; Described metal heating wire is tungsten filament;
Step 3, apply one deck boron nitride separator post-drying at described biscuit surface uniform;
Step 4, then carry out hot pressed sintering, sintering pressure 20-30MPa, sintering temperature 1600-1900 DEG C, temperature retention time 0.5-4 hour, to make blank;
Step 5, described blank is put into vacuum atmosphere oven, keep 1300-1600 DEG C of constant temperature 10-24 hour, then naturally cool to room temperature.
Further, described boron nitride separator is by the thick shape slurry that boron nitride powder and silicon nitride powder mix afterwards and absolute ethyl alcohol reconciles into; Wherein, the part by weight of silicon nitride powder and boron nitride powder is: 0.10:0.90 to 0:1.00.
Further, in described step 4, when carrying out hot pressed sintering, the hot pressing graphite jig of employing with the contact-making surface of biscuit on scribble boron nitride separator described in one deck.
The preferred Al of described high-temperature liquid-phase sintering agent
2o
3, MgO, SiO
2deng metal oxide, Y
2o
3, La
2o
3, CeO
2deng rare earth oxide, AlN, Mg
3n
2, the nitride such as TiN, ZrN, addition is 4wt%-20wt%.Wherein, the addition of described metal oxide is 0-20wt%, and the addition of rare earth oxide is 0-20wt%, and the addition of nitride is 0-5wt%.Common metal oxides can reduce sintering temperature, and rare earth oxide and a small amount of nitride can increase the viscosity of high-temperature liquid-phase and help high temperature crystallization.
The technique effect that the present invention has: (1) silicon nitride heat generating body of the present invention adopts high purity silicon nitride (Si
3n
4) powder, a small amount of liquid phase sintering and high-temperature metal heating wire composition, through forming of green body, after hot pressed sintering and high-temperature heat treatment, make compact silicon nitride base heater.This heater has the feature of high-strength, high thermal conductance, high reliability.Wherein biscuit surface has boron nitride powder (BN) coating, this process eliminates the infiltration of carbon in production process.High-temperature heat treatment process eliminates material stress, facilitates the crystallization of grain boundary glassy phase, substantially increases reliability and the fail safe of device.(2) in the manufacture method of silicon nitride heat generating body of the present invention, with absolute ethyl alcohol (99.9% purity) as medium, ball milling mixing 10-72 hour, both ensure that batch mixing was even, had again reduced oxidative phenomena.Any macromolecule modifier is not added in manufacturing process of the present invention.Some polymeric additive can improve the performance of biscuit and improve shaping finished product rate, but the technique that the biscuit of this technological forming must glue through row, get rid of polymeric additive.In general, under oxygen atmosphere, row is sticky can get rid of to greatest extent and burn the carbon in polymeric additive.And silicon nitride can only be arranged sticky under vacuum or nitrogen protection atmosphere, thoroughly eliminate carbon more difficult, so the residue always leaving some carbon containings is evenly distributed in biscuit, insulated with material and reliability can be reduced.The present invention does not adopt any macromolecule additive, but relies on dry-pressing and isostatic cool pressing technique to prepare the biscuit of high strength.(3) in the present invention, biscuit surface uniform is coated with BN separator, biscuit can be stoped to contact with the direct of graphite, eliminate the possibility of high temperature case-carbonizing element.(4) the present invention is after hot pressed sintering, and the material stress of silicon nitride heat generating body is comparatively large, is slow cooling to room temperature, can eliminates the stress of material after at high temperature annealing in process 10-24 hour.In addition, in high-temperature process, make the glassy phase crystallization in material, remaining carbon can be eliminated further and reduce material stress.(5) silicon nitride heating matrix of the present invention contains high-purity Si 3N4 powder and a small amount of high-temperature liquid-phase sintering agent.Initial substrate raw material and heating wire make biscuit through dry-pressing and isostatic cool pressing, biscuit surface-coated BN material.Biscuit at high temperature under high pressure hot pressed sintering becomes blank.Sintering blank high-temperature heat treatment process eliminates material stress and glass ceramics phase, has the feature of higher reliability and fail safe.
Accompanying drawing explanation
In order to make content of the present invention be more likely to be clearly understood, below basis specific embodiment and by reference to the accompanying drawings, the present invention is further detailed explanation, wherein
Fig. 1 is the structural representation of the silicon nitride heat generating body in embodiment.
Reference numeral: 1--silicon nitride heat generating body, 2--metal heating wire, 3--electrode.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in detail:
(embodiment 1)
The silicon nitride heat generating body of the present embodiment is made up of silicon nitride heating and the high-temperature metal heating wire be located in silicon nitride heat generating body.Metal heating wire is tungsten filament, molybdenum filament or tungsten-molybdenum alloy silk.
The manufacture method of above-mentioned silicon nitride heat generating body comprises:
Step 1, silicon nitride powder and high-temperature liquid-phase sintering agent inserted in absolute ethyl alcohol by weight 0.96:0.04 to 0.80:0.20 mix (ballmillmixer specifically can be adopted to mix), after batch mixing 10-72 hour, make formulation material through mist projection granulating;
Step 2, metal heating wire is imbedded in described formulation material dry-pressing formed, then compressing further by the isostatic cool pressing of 180-220MPa, and pressurize 3-10 minute, to make biscuit;
Step 3, apply one deck boron nitride separator post-drying at described biscuit surface uniform;
Step 4, then carry out hot pressed sintering, sintering pressure 20-30MPa, sintering temperature 1600-1900 DEG C, temperature retention time 0.5-4 hour, to make blank;
Step 5, described blank is put into vacuum atmosphere oven, keep 1300-1600 DEG C of constant temperature 10-24 hour, then naturally cool to room temperature, finally at metal heating wire two ends welding electrode.
Described boron nitride separator is by the thick shape slurry that boron nitride powder and silicon nitride powder mix afterwards and absolute ethyl alcohol reconciles into; Wherein, the part by weight of silicon nitride powder and boron nitride powder is: 0.10:0.90 to 0:1.00.
In described step 4, when carrying out hot pressed sintering, the hot pressing graphite jig of employing with the contact-making surface of biscuit on scribble boron nitride separator described in one deck.
(embodiment 2)
On the basis of embodiment 1, the manufacture method of the silicon nitride heat generating body of the present embodiment comprises:
By the silicon nitride powder of 92wt%, the Al of 3wt %
2o
3, the Y of 3wt%
2o
3, the AlN of the MgO of 1wt%, 1wt% adds 99.9% absolute ethyl alcohol Homogeneous phase mixing 72 hours, then inserts mist projection granulating in explosion-proof mist projection granulating tower and makes formulation material.
Formulation material is poured in mould, then metal heating wire is imbedded in powder dry-pressing formed, be of a size of 120*20*10.Encapsulated by dry-pressing formed biscuit, put into isostatic cool pressing equipment and carry out isostatic pressed process, the pressure of isostatic pressed is 200MPa, dwell time 3-10 minute again.Reconcile into thick shape slurry with high-pure anhydrous ethanol and boron nitride fine powder, adopt knife coating, at the uniform boron nitride separator of biscuit surface-coated one deck, drying and processing.Also be coated with one deck boron nitride separator at hot pressing graphite jig and biscuit contact-making surface, the biscuit handled well is put into mould.Mould is put into hot pressing furnace, and at 1800 degrees Celsius, 25MPa suppresses 2 hours, comes out of the stove within Temperature fall to 50 degree Celsius.Blank after sintering is put into heat-treatment furnace, and flowing nitrogen is protected, and at 1300-1500 degree Celsius, insulation is after 15 hours altogether, and slow cooling is come out of the stove to room temperature.Processed through surfacing by the fever tablet blank made, the subsequent techniques such as soldering make the silicon nitride heating plate of high-performance and high reliability.
Relevant isostatic cool pressing: under normal temperature, be placed in by powder in the middle of airtight liquid environment, liquid transfer superhigh pressure makes powder compacting.Because in liquid, pressure is equal everywhere, so be isostatic pressed.Again due under being normal temperature, so be isostatic cool pressing.Working temperature, when 100-200 DEG C, is warm isostatic pressed.Working temperature is higher is then high temperature insostatic pressing (HIP).What have reaches 2000 DEG C
Traditional spray granulation is all pass into hot blast in drying tower, by contacting with feed liquid is large-area, and transpiring moisture, and obtain shaping particle.
Hot pressed sintering is filled in model by dry powder, then add flanging heating from limit, single shaft direction, makes shaping and sinter a kind of sintering method simultaneously completed.Hot-press equipment: conventional hot press forms primarily of heating furnace, pressue device, mould and thermometric pressure tester.
Obviously, above-described embodiment is only for example of the present invention is clearly described, and is not the restriction to embodiments of the present invention.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.And these belong to spirit institute's apparent change of extending out of the present invention or change and are still among protection scope of the present invention.
Claims (3)
1. a manufacture method for silicon nitride heat generating body, is characterized in that comprising:
Step 1, silicon nitride powder and high-temperature liquid-phase sintering agent inserted in absolute ethyl alcohol by weight 0.96:0.04 to 0.80:0.20 mix, after batch mixing 10-72 hour, make formulation material through mist projection granulating;
Step 2, metal heating wire is imbedded in described formulation material dry-pressing formed, then compressing further by the isostatic cool pressing of 180-220MPa, and pressurize 3-10 minute, to make biscuit; Described metal heating wire is tungsten filament;
Step 3, apply one deck boron nitride separator post-drying at described biscuit surface uniform;
Step 4, then carry out hot pressed sintering, sintering pressure 20-30MPa, sintering temperature 1600-1900 DEG C, temperature retention time 0.5-4 hour, to make blank;
Step 5, described blank is put into vacuum atmosphere oven, keep 1300-1600 DEG C of constant temperature 10-24 hour, then naturally cool to room temperature, finally at metal heating wire two ends welding electrode.
2. the manufacture method of silicon nitride heat generating body according to claim 1, is characterized in that: described boron nitride separator is by the thick shape slurry that boron nitride powder and silicon nitride powder mix afterwards and absolute ethyl alcohol reconciles into; Wherein, the part by weight of silicon nitride powder and boron nitride powder is: 0.10:0.90 to 0:1.00.
3. the manufacture method of silicon nitride heat generating body according to claim 2, is characterized in that: in described step 4, when carrying out hot pressed sintering, the hot pressing graphite jig of employing with the contact-making surface of biscuit on scribble boron nitride separator described in one deck.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310003718.1A CN103096528B (en) | 2010-12-09 | 2010-12-09 | Preparation method for silicon nitride heating body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310003718.1A CN103096528B (en) | 2010-12-09 | 2010-12-09 | Preparation method for silicon nitride heating body |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010582116 Division CN102170716B (en) | 2010-12-09 | 2010-12-09 | Manufacturing method of silicon nitride heating element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103096528A CN103096528A (en) | 2013-05-08 |
| CN103096528B true CN103096528B (en) | 2015-04-08 |
Family
ID=48208488
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310003718.1A Active CN103096528B (en) | 2010-12-09 | 2010-12-09 | Preparation method for silicon nitride heating body |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103096528B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104446507A (en) * | 2014-11-19 | 2015-03-25 | 东莞市国研电热材料有限公司 | Manufacturing method of ceramic heating element and ceramic heating element |
| CN105936595A (en) * | 2015-11-28 | 2016-09-14 | 衡阳凯新特种材料科技有限公司 | Silicon nitride heating element and preparation method thereof |
| CN105884375B (en) * | 2016-03-18 | 2018-05-22 | 北方民族大学 | A kind of Si3N4-TiZrN2The lqiuid phase sintering method of-TiN composite conductive ceramics |
| CN106007661A (en) * | 2016-05-23 | 2016-10-12 | 湖南省醴陵市电热电器瓷厂 | Making method of integral ceramic heating body and integral ceramic heating body |
| CN110557853B (en) * | 2019-07-18 | 2022-08-09 | 武汉纺织大学 | Method for manufacturing high-temperature sintered body capable of generating heat by electrifying, product and application method |
| CN112369693B (en) * | 2020-06-09 | 2023-06-16 | 湖北中烟工业有限责任公司 | A heating element for low-temperature tobacco products and its preparation method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1229829A (en) * | 1999-03-15 | 1999-09-29 | 广州石潮高性能陶瓷总公司 | Silicon nitride heat generating body and its prodn. method |
| EP1282341A2 (en) * | 2001-07-30 | 2003-02-05 | Ngk Spark Plug Co., Ltd | Ceramic heater and method for manufacturing the same |
| CN1849017A (en) * | 2005-04-05 | 2006-10-18 | 郜长福 | Silicon nitride heating body and its pressureless lower temperature sintering producing method |
| CN101318822A (en) * | 2008-07-04 | 2008-12-10 | 冷水江市明玉陶瓷工具有限责任公司 | Silicon nitride composite ceramics heater |
| CN101665363A (en) * | 2009-09-25 | 2010-03-10 | 湖南赛瑞新能源有限公司 | Additive for silicon nitride sintered bodies |
| CN101885608A (en) * | 2010-07-15 | 2010-11-17 | 武汉工程大学 | Boron nitride nanotube toughened silicon nitride ceramic material and preparation method thereof |
-
2010
- 2010-12-09 CN CN201310003718.1A patent/CN103096528B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1229829A (en) * | 1999-03-15 | 1999-09-29 | 广州石潮高性能陶瓷总公司 | Silicon nitride heat generating body and its prodn. method |
| EP1282341A2 (en) * | 2001-07-30 | 2003-02-05 | Ngk Spark Plug Co., Ltd | Ceramic heater and method for manufacturing the same |
| CN1849017A (en) * | 2005-04-05 | 2006-10-18 | 郜长福 | Silicon nitride heating body and its pressureless lower temperature sintering producing method |
| CN101318822A (en) * | 2008-07-04 | 2008-12-10 | 冷水江市明玉陶瓷工具有限责任公司 | Silicon nitride composite ceramics heater |
| CN101665363A (en) * | 2009-09-25 | 2010-03-10 | 湖南赛瑞新能源有限公司 | Additive for silicon nitride sintered bodies |
| CN101885608A (en) * | 2010-07-15 | 2010-11-17 | 武汉工程大学 | Boron nitride nanotube toughened silicon nitride ceramic material and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103096528A (en) | 2013-05-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103096529B (en) | There is the manufacture method of the silicon nitride heat generating body of higher reliability and fail safe | |
| CN103096528B (en) | Preparation method for silicon nitride heating body | |
| CN108585881A (en) | A kind of high heat conductivity silicon nitride ceramics and preparation method thereof | |
| CN100540506C (en) | A kind of preparation method of large size ceramic ball | |
| CN104909765B (en) | A kind of low cost, quick preparation high-performance Si3N4The method of Ceramic Balls | |
| CN103553559A (en) | Composite material and preparation method of CaO-B2O3-SiO2 glass + aluminum nitride ceramics | |
| CN102515714A (en) | Low-temperature co-fired ceramic material with high thermal conductivity and preparation method thereof | |
| CN114149261B (en) | A kind of lead hafnate antiferroelectric ceramic material and preparation method thereof | |
| CN102795860A (en) | Method for preparing silicon nitride ceramic balls | |
| CN106348777A (en) | Alumina-based composite ceramic knife material and microwave preparation method thereof | |
| CN116217239A (en) | Preparation method of silicon nitride ceramic with high thermal conductivity and low resistivity | |
| CN111848179B (en) | Preparation method of high-strength boron nitride ceramic capable of being used in ultrahigh-temperature environment | |
| CN113817946B (en) | A kind of HEA-SiC high temperature wave absorbing material and preparation method thereof | |
| CN104177087A (en) | Method for preparing silicon carbide bonded silicon nitride composite material by using microwave sintering process | |
| CN101734920B (en) | Titanium nitride porous ceramics and preparation method thereof | |
| CN103320636A (en) | A new method for rapid preparation of high-performance Mg2Si0.3Sn0.7-based thermoelectric materials | |
| CN117142863A (en) | Boron nitride ceramic setter plate and preparation method thereof | |
| CN116396090B (en) | Silicon carbide/boron carbide ceramic skeleton reinforced carbon-based composite material, and preparation method and application thereof | |
| CN102821550B (en) | Nanostructure composite LED (Light Emitting Diode) ceramic substrate and manufacturing method thereof | |
| CN101948304B (en) | Preparation method of stannic oxide electrode | |
| CN1978099A (en) | PbTe powde material formation preparing method | |
| CN106673669A (en) | Magnesia-alumina spinel-silicon nitride-based honeycomb ceramic heat-absorbing body and preparation method thereof | |
| CN107879745B (en) | Ceramic material containing eutectic structure and preparation method thereof | |
| CN105936595A (en) | Silicon nitride heating element and preparation method thereof | |
| CN112142469A (en) | Graphite-based oxidation-resistant section bar, preparation method and application |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: JIANGSU JINSHENG CERAMIC TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: JIANGSU HUASHENG FINE CERAMIC SCI. + TECH. CO., LTD. Effective date: 20140521 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20140521 Address after: 213000, No. 1, Hua Sheng Road, Tang Zhen Town, Yao Town, Changzhou City, Jiangsu, Jintan Applicant after: JIANGSU JINSHENG CERAMIC TECHNOLOGY CO., LTD. Address before: 213000, No. 1, Miss Xiang Road, Jintan Economic Development Zone, Jiangsu, Changzhou Applicant before: Huasheng Fine Ceramic Science-Technolgoy Co., Ltd., Jiangsu |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 213000, No. 1, Hua Sheng Road, Tang Zhen Town, Yao Town, Changzhou City, Jiangsu, Jintan Patentee after: Jiangsu guoci Jinsheng Ceramic Technology Co., Ltd Address before: 213000, No. 1, Hua Sheng Road, Tang Zhen Town, Yao Town, Changzhou City, Jiangsu, Jintan Patentee before: Jiangsu JinSheng Ceramic Technology Co.,Ltd. |