CN103165680B - A kind of substrate for display and display unit - Google Patents

Abstract

The invention provides a substrate for display and a display device, relates to the field of display technology, and solves the problem of low transmittance of the existing transparent film. A display substrate, comprising: a substrate and a plurality of pixel structures arranged on the substrate; the pixel structure is divided into a light-transmitting area and a non-light-transmitting area, and the pixel structure located in the light-transmitting area Part includes a plurality of transparent films, the refractive index of at least three adjacent transparent films in the plurality of transparent films changes sequentially in sequence; a gate insulating layer, a passivation layer and a pixel electrode are sequentially arranged on the substrate, so The refractive indices of at least three adjacent transparent films among the plurality of transparent films are sequentially changed according to the arrangement sequence, specifically: the refractive indices of the gate insulating layer, the passivation layer and the pixel electrode are sequentially changed. The invention is applicable to the field of manufacturing display devices.

Description

A display substrate and a display device

technical field

The invention relates to the field of display technology, in particular to a transparent thin film and a manufacturing method thereof, a display substrate and a display device.

Background technique

As a display tool, monitors are playing an increasingly important role in people's daily lives. And with the continuous update of technology, people have higher and higher requirements for displays. For example, people require it to have high brightness, wide viewing angle, high resolution and so on.

Wherein, in the prior art, a method for increasing the brightness of a display is to increase light utilization efficiency. The existing display includes an array substrate, as shown in Fig. 1 and Fig. 2, the array substrate includes a substrate 1 and gate lines 2, data lines 4 and common electrode lines 6 arranged on the substrate 1, wherein the gate The area enclosed by the line 2 and the data line 4 is called a pixel area, in which thin film transistors 3 and other devices are arranged, and the area of the pixel area except the thin film transistors 3 and other devices is a display area. As shown in FIG. 2 , light passing through the display area passes through the substrate 1 and the gate insulating layer 7 , passivation layer 8 and pixel electrode layer 5 arranged on the substrate 1 in sequence. In order to improve the utilization efficiency of light, the transmittance of the substrate, gate insulating layer, passivation layer, and pixel electrode layer must be increased to reduce light loss.

Contents of the invention

Embodiments of the present invention provide a transparent thin film and its manufacturing method, a display substrate, and a display device. The transparent thin film includes at least three sublayers, and the refractive indices of the at least three sublayers change sequentially in sequence, so that all The transmittance of the transparent film is higher.

In order to achieve the above object, embodiments of the present invention adopt the following technical solutions:

An embodiment of the present invention provides a transparent film, including at least three sublayers stacked, the refractive indices of the at least three sublayers are different, and the refractive index of any sublayer located between the bottommost layer and the topmost layer is between between the refractive indices of the two adjacent sublayers.

Optionally, the material forming the transparent film is silicon nitride.

The embodiment of the present invention provides a method for manufacturing a transparent film, including:

Setting initial process conditions to form an initial sublayer of the transparent film;

According to the influence of the change of each process condition on the refractive index of the transparent film, adjust the at least one process condition to form at least two subsequent sublayers whose refractive index changes sequentially based on the initial sublayer. .

Optionally, setting the initial process conditions includes: setting initial generation temperature, generation pressure, power and gas flow.

Optionally, according to the influence of each process condition change on the refractive index of the transparent film, the at least one process condition is adjusted to form a transparent film whose refractive index changes sequentially based on the initial sub-layer. At least two subsequent sublayers include:

Forming the second sub-layer by at least one adjustment mode of increasing the forming temperature, reducing the forming pressure and reducing the power;

Forming one or more subsequent sub-layers by one or more adjustment methods of increasing the forming temperature, reducing the forming pressure and reducing the power;

or,

Forming the second sub-layer by using at least one adjustment method among reducing the formation temperature, increasing the formation pressure, and increasing the power;

One or more subsequent sub-layers are formed by adopting at least one adjustment method among lowering the forming temperature, increasing the forming pressure and increasing the power one or more times.

Optionally, according to the influence of each process condition change on the refractive index of the transparent film, the at least one process condition is adjusted to form a transparent film whose refractive index changes sequentially based on the initial sub-layer. At least two subsequent sublayers include:

Forming the second sub-layer by at least one of increasing the formation temperature, reducing the formation pressure, reducing the power, and reducing the gas flow rate of silane relative to ammonia;

forming one or more subsequent sublayers one or more times by at least one of increasing the formation temperature, reducing the formation pressure, reducing the power, and reducing the gas flow of silane relative to ammonia;

or,

Forming the second sub-layer by at least one of reducing the formation temperature, increasing the formation pressure, increasing the power, and increasing the gas flow rate of silane relative to ammonia;

The one or more subsequent sublayers are formed one or more times by adjusting at least one of lowering the formation temperature, increasing the formation pressure, increasing the power, and increasing the gas flow of silane relative to ammonia.

An embodiment of the present invention provides a substrate for display, including: a substrate and a plurality of pixel structures arranged on the substrate; the pixel structure is divided into a light-transmitting area and a non-light-transmitting area, and the The part of the light-transmitting region includes a plurality of transparent films, wherein the at least one transparent film is any one of the films provided in the embodiments of the present invention.

Optionally, the display substrate is an array substrate, and one of the transparent thin films in each pixel structure is a part of a gate insulating layer, or a part of a passivation layer.

The present invention provides a substrate for display, comprising: a substrate and a plurality of pixel structures arranged on the substrate; the pixel structure is divided into a light-transmitting area and a non-light-transmitting area, and the The part of the light-transmitting area includes a plurality of transparent films, and the refractive indices of at least three adjacent transparent films in the plurality of transparent films change sequentially in sequence.

The present invention provides a display device, including any one of the display substrates provided in the embodiments of the present invention.

The embodiments of the present invention provide a transparent film and its manufacturing method, a display substrate, and a display device. Compared with the existing transparent film including two sublayers, the transparent film includes at least three sublayers, and the at least three sublayers The refractive indices are different, and the refractive indices of the at least three sublayers are changed sequentially according to the order of arrangement, that is, the refractive index of any sublayer located between the bottommost layer and the topmost layer is lower than that of the two adjacent sublayers. rate, so that the transmittance of the transparent film is higher.

Description of drawings

FIG. 1 is a schematic structural view of a partial top view of an array substrate in the prior art;

FIG. 2 is a schematic cross-sectional structural view of the array substrate shown in FIG. 1;

Fig. 3 is a kind of transparent film provided by the embodiment of the present invention;

4 is a schematic cross-sectional structure diagram of an array substrate provided by an embodiment of the present invention;

Fig. 5 is a schematic diagram of a method for making a transparent film provided by an embodiment of the present invention;

FIG. 6 is a schematic diagram of a method for manufacturing a gate insulating film provided by an embodiment of the present invention;

Reference signs:

1-substrate; 2-gate line; 3-thin film transistor; 4-data line; 5-pixel electrode layer; 6-common electrode line; 7-gate insulating layer; 8-passivation layer; 10-transparent film; 101- 1st sublayer; 102-second sublayer; 103-third sublayer.

detailed description

The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention.

It should be noted that when light is incident from a medium with a refractive index of n1 to a medium with a refractive index of n2, reflection and refraction of light will occur simultaneously at the interface, thereby resulting in light loss. According to the fundamental theorem of optics, the Fresnel equation, the relationship between the reflectivity R and the transmittance T and the refractive index of the medium is:

$\mathrm{<span\; class="notranslate">\; R</span>}<span\; class="notranslate">\; =</span>\frac{{<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; no</span>}\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; no</span>}\mathrm{<span\; class="notranslate">\; 2</span>}<span\; class="notranslate">\; )</span>}^{\mathrm{<span\; class="notranslate">\; 2</span>}}}{{<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; no</span>}\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; +</span>\mathrm{<span\; class="notranslate">\; no</span>}\mathrm{<span\; class="notranslate">\; 2</span>}<span\; class="notranslate">\; )</span>}^{\mathrm{<span\; class="notranslate">\; 2</span>}}}<span\; class="notranslate">\; ,</span>$ $\mathrm{<span\; class="notranslate">\; T</span>}<span\; class="notranslate">\; =</span>\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; -</span>\mathrm{<span\; class="notranslate">\; R</span>}<span\; class="notranslate">\; =</span>\frac{\mathrm{<span\; class="notranslate">\; 4</span>}\mathrm{<span\; class="notranslate">\; no</span>}\mathrm{<span\; class="notranslate">\; ln</span>}\mathrm{<span\; class="notranslate">\; 2</span>}}{{<span\; class="notranslate">\; (</span>\mathrm{<span\; class="notranslate">\; no</span>}\mathrm{<span\; class="notranslate">\; 1</span>}<span\; class="notranslate">\; +</span>\mathrm{<span\; class="notranslate">\; no</span>}\mathrm{<span\; class="notranslate">\; 2</span>}<span\; class="notranslate">\; )</span>}^{\mathrm{<span\; class="notranslate">\; 2</span>}}}<span\; class="notranslate">\; ,</span>$

Assume now that n1=2, n2=1, that is, light enters from a medium with a refractive index of 2 into a medium with a refractive index of 1. After calculation, it can be obtained that R=11.1%, T=88.9%, where the reflectivity and refractive index are calculated approximate values.

When a medium with a refractive index n3 is added between the mediums with a refractive index n1 and a refractive index n2, wherein n3 is between n1 and n2. For example, n3=1.5, it can be calculated that R=5.9%, T=94.1%, that is, the transmittance is increased by 5.2%.

When a medium with a refractive index of n4 is added between a medium with a refractive index of n1 and a refractive index of n3, a medium with a refractive index of n5 is added between a medium with a refractive index of n2 and a refractive index of n3, wherein n4 is between Between n1 and n3, n5 between n2 and n3. For example, n4=1.75, n5=1.25, it can be calculated that R=3.0%, T=97.0%, that is, the transmittance is increased by 8.1%.

From this, it can be concluded that when light passes through media with different refractive indices, there will be light loss due to reflection and refraction, but by adding a medium with a refractive index between the two media between media with different refractive indices , can increase the transmittance of light, and then improve the utilization rate of light.

Based on the above theory, the present invention provides a transparent film, as shown in Figure 3, comprising at least three sub-layers stacked, the refractive indices of the at least three sub-layers are different, and are located between the bottommost layer and the topmost layer The refractive index of any sub-layer is between the refractive indices of the two adjacent sub-layers.

Wherein, the transparent thin film may be a gate insulating layer or a passivation layer on an array substrate in a display device. And it should be noted that in the prior art, most of the layer structures in the field of display devices are deposited by vapor deposition, for example, passivation layers, gate insulating layers, etc. can be formed by PECVD (PlasmaEnhancedChemicalVaporDeposition, plasma vapor deposition) . Plasma vapor deposition is a kind of ionization of the gas containing the constituent atoms of the film by means of microwave or radio frequency to form plasma locally, and the plasma is highly chemically active and easy to react, and then deposits the desired film on the substrate. In the embodiments of the present invention, "thin film" refers to a layer of thin film produced by methods such as deposition. If the "thin film" does not require a patterning process during the entire manufacturing process, the "thin film" can also be called a "layer", such as a gate insulating layer; It is called "film" before the process, and it is called "layer" after the patterning process. The "layer" after the patterning process contains at least one film "pattern". For example, the passivation layer is deposited to form a thin film, and then a via hole is formed on the thin film through a patterning process.

In the prior art, the gate insulating layer is deposited by PECVD, and the material forming the gate insulating layer is preferably SiNx (silicon nitride), and of course other materials, such as SiO ₂ (silicon dioxide), can also be used. The embodiment of the present invention is described in detail only by taking silicon nitride as an example for the gate insulating layer. During the deposition process of the gate insulating film, silane and ammonia gas are respectively ionized to form plasma, and silicon nitride is formed by reaction to form a gate insulating film on the substrate. In the early stage of gate insulating film deposition, the deposition radio frequency power is higher and the deposition rate is faster, which can increase productivity, but the deposited SiNx structure is loose, and the Si/N ratio is relatively high, and the refractive index of the formed gate insulating film is relatively large. . In the later stage of deposition, in order to ensure that the source and drain conduction signals on the active layer are not disturbed, the deposition rate will be reduced. The deposited SiNx has a dense structure and a relatively low Si/N ratio. The refractive index of the formed gate insulating film smaller. That is, the gate insulating layer includes two sublayers with different refractive indices.

The film provided by the present invention may be the gate insulating film, and compared with the existing gate insulating film comprising two sublayers, the transmittance of the gate insulating film comprising at least three sublayers is improved, thereby improving the utilization rate of light , applied to the display panel, can improve the brightness of the display panel. As shown in FIG. 3 , the gate insulating layer 10 includes three sublayers as an example, and the three sublayers are respectively a first sublayer 101 , a second sublayer 102 and a third sublayer 103 . Wherein, the transmittance of the second sub-layer 102 is between those of the first sub-layer 101 and the third sub-layer 103 . In this way, by disposing the second sublayer between the first sublayer and the third sublayer, the transmittance of the gate insulating layer is improved, and when applied to a display panel, the brightness of the display panel can be improved.

The passivation layer is similar to the gate insulating layer, and the material forming the passivation layer may also be silicon nitride, and the passivation film in the prior art also includes two sublayers with different refractive indices. Specifically, in the early stage of the deposition of the passivation film, in order to protect the signal lines from being corroded, the deposited SiNx has a dense structure, and the formed passivation film has a relatively small refractive index. In the later stage of the passivation film deposition, in order to facilitate the control of the slope angle of the via hole, the deposited SiNx structure is loose, and the formed passivation film has a relatively large refractive index.

The film provided by the present invention can be the passivation film, and compared with the existing passivation film comprising two sub-layers, the transmittance of the passivation film comprising at least three sub-layers is improved, thereby improving the utilization rate of light , applied to the display panel, can improve the brightness of the display panel.

Of course, the films provided in the embodiments of the present invention are not limited to the gate insulating film and the passivation film, and may also be other films in the display field or films in other fields. For example, it may also be a pixel electrode film or a common electrode film on a color filter substrate, etc. The embodiment of the present invention only uses a gate insulating film and a passivation film as examples for detailed description.

The present invention provides a method for making a transparent film, which can be used to make the transparent film provided by the embodiment of the present invention, as shown in Figure 5, including:

Step S101 , setting initial process conditions to form an initial sub-layer of the transparent film.

Wherein, the process conditions for forming the transparent thin film are different according to the thin films of different materials and different forming methods. The embodiment of the present invention is described in detail by taking the formation of a silicon nitride film by PECVD as an example. Specifically, for forming a silicon nitride film by PECVD, the process conditions include: generation temperature, generation pressure, power and gas flow. Then, the setting of the initial process conditions includes: setting the initial generation temperature, generation pressure, power and gas flow.

Wherein, the gas flow rate affects the mass ratio of each chemical element of the material forming the transparent film, and the amount of generated gas is different, so is the content of each chemical element in the material forming the transparent film. And for different substances, the gases generated are also different. For example, to deposit silicon nitride, silane and ammonia gas are ionized to form plasma, and silicon nitride is formed by reaction to form a silicon nitride film on the substrate. Then the generated gas is silane and ammonia gas, wherein silane provides silicon element, and ammonia gas provides nitrogen element. Si/N (silicon-nitrogen ratio) for forming a silicon nitride film can be controlled by controlling the gas flow rate.

Step S102, according to the influence of the change of each process condition on the refractive index of the transparent film, adjust the at least one process condition to form at least two layers whose refractive index changes sequentially based on the initial sub-layer. subsequent sublayers.

Among them, the influence of process conditions on the transmittance of films of different materials is also different, which requires specific analysis according to the specific conditions of the films. The embodiments of the present invention are described by taking the influence of the above process conditions on the refractive index of the silicon nitride thin film as an example.

Specifically, the formation temperature is inversely proportional to the refractive index of the silicon nitride transparent film, that is, the higher the formation temperature, the smaller the refractive index of the silicon nitride transparent film; conversely, the lower the formation temperature, the lower the The greater the refractive index of the silicon nitride transparent film; the generation pressure is proportional to the refractive index of the silicon nitride transparent film, that is, the greater the generation pressure, the greater the refractive index of the silicon nitride transparent film, and vice versa, The smaller the generation pressure, the smaller the refractive index of the silicon nitride transparent film; the power is proportional to the refractive index of the silicon nitride transparent film, that is, the greater the power, the smaller the refractive index of the silicon nitride transparent film The larger the power, on the contrary, the smaller the power, the smaller the refractive index of the silicon nitride transparent film.

The adjustment of the at least one process condition is to form at least two subsequent sublayers whose refractive index changes sequentially based on the initial sublayer. It can be based on the initial sublayer, and the refractive indices of at least two subsequent sublayers increase sequentially in sequence; or based on the initial sublayer, the refractive indices of at least two subsequent sublayers can be arranged in sequence order in decreasing order.

Specifically, according to the influence of the change of each process condition on the refractive index of the transparent film, the at least one process condition is adjusted to form at least one layer whose refractive index decreases sequentially based on the initial sub-layer. The two subsequent sublayers include:

Forming the second sub-layer by at least one adjustment mode of increasing the forming temperature, reducing the forming pressure and reducing the power;

One or more subsequent sub-layers are formed by adopting at least one adjustment method among increasing the forming temperature, reducing the forming pressure and reducing the power one or more times.

Or, according to the influence of the change of each process condition on the refractive index of the transparent film, adjust the at least one process condition to form at least two primary sub-layers whose refractive index increases sequentially based on the order of arrangement. Subsequent sublayers include:

Forming the second sub-layer by using at least one adjustment method among reducing the formation temperature, increasing the formation pressure, and increasing the power;

One or more subsequent sub-layers are formed by adopting at least one adjustment method among lowering the forming temperature, increasing the forming pressure and increasing the power one or more times.

For the same substance, the gas flow rate is controlled so that the content of each chemical element in the substance of the transparent thin film is different, and the influence of the refractive index is also different. Moreover, the content of each chemical element in the transparent film formed by different substances has different effects on its refractive index. In the embodiment of the present invention, only silicon nitride is taken as an example. Different ratios of silicon to ammonia can be obtained by controlling the gas flow of silane and ammonia to generate silicon nitride, and the refractive index of the silicon nitride transparent film is directly proportional to Si/N. That is, the larger the Si/N, the larger the refractive index of the silicon nitride transparent film; the smaller the Si/N, the smaller the refractive index of the silicon nitride transparent film.

Specifically, for the formation of a silicon nitride transparent film by silane and ammonia gas, according to the influence of the change of each process condition on the refractive index of the transparent film, adjust the at least one process condition to form the initial particle The at least two subsequent sub-layers whose refractive index decreases sequentially according to the layer include:

Forming the second sub-layer by at least one of increasing the formation temperature, reducing the formation pressure, reducing the power, and reducing the gas flow rate of silane relative to ammonia;

One or more subsequent sub-layers are formed using at least one of increasing the formation temperature, reducing the formation pressure, reducing the power, and reducing the gas flow of silane relative to ammonia one or more times.

Wherein, the reduction of the gas flow rate of silane relative to the ammonia gas may be to reduce the gas flow rate of silane gas or to increase the gas flow rate of ammonia gas, as long as the Si/N ratio is lowered.

Or, according to the influence of the change of each process condition on the refractive index of the transparent film, the at least one process condition is adjusted to form at least one layer whose refractive index increases sequentially based on the initial sub-layer. The two subsequent sublayers include:

Forming the second sub-layer by at least one of reducing the formation temperature, increasing the formation pressure, increasing the power, and increasing the gas flow rate of silane relative to ammonia;

The one or more subsequent sublayers are formed one or more times by adjusting at least one of lowering the formation temperature, increasing the formation pressure, increasing the power, and increasing the gas flow of silane relative to ammonia.

Wherein, the increase of the gas flow rate of silane relative to the ammonia gas may be to increase the gas flow rate of silane gas or to decrease the gas flow rate of ammonia gas, as long as the Si/N ratio is increased.

Specifically, for the gate insulating layer on the substrate, since the refractive index of the two sub-layers decreases sequentially from bottom to top in the existing process, when the gate insulating layer includes multiple sub-layers, the refractive index of each sub-layer sequentially decreases from bottom to top decrease. For the passivation layer on the substrate, since the refractive index of the two sublayers increases sequentially from bottom to top in the prior art, when the passivation layer includes multiple sublayers, the refractive index of each sublayer increases sequentially from bottom to top. The "upper" and "lower" are based on the order in which the sub-layers are produced, for example, the sub-layer formed first is the lower sub-layer, and the sub-layer formed later is the upper sub-layer.

Specifically, as shown in FIG. 6, making the gate insulating film includes:

Step S201 , setting initial generation temperature, generation pressure, power and gas flow rate to form an initial sub-layer of the gate insulating film.

Step S202 , using at least one adjustment method among increasing the generation temperature, reducing the generation pressure, reducing the power, and reducing the gas flow rate of silane relative to ammonia to form the second sublayer.

On the basis of the initial process conditions, increasing the formation temperature, reducing the formation pressure, reducing the power, and reducing the gas flow rate of silane relative to ammonia can be adjusted in one of them, or in multiple ways at the same time, so that the formed second child The refractive index of the layer is greater than the refractive index of the first sublayer.

Step S203 , using at least one adjustment method among increasing the generation temperature, reducing the generation pressure, reducing the power, and reducing the gas flow rate of silane relative to ammonia to form the third sublayer.

Similarly, on the basis of the process conditions in step S202, increase the generation temperature, reduce the generation pressure, reduce the power, and reduce the gas flow rate of silane relative to ammonia, one of which can be adjusted, and multiple ways can also be adjusted at the same time , so that the refractive index of the formed third sublayer is greater than the refractive index of the second sublayer.

By analogy, subsequent sub-layers can also be formed, and the formed gate insulating film includes at least three sub-layers, and the refractive index of each sub-layer increases sequentially. Compared with the existing gate insulating film, its transmittance is higher .

The embodiment of the present invention is described in detail by taking the fabrication of the gate insulating film as an example, and the above-mentioned steps may be referred to for fabricating other transparent films, and details are not repeated here.

The present invention provides a substrate for display, comprising: a substrate and a plurality of pixel structures arranged on the substrate; the pixel structure is divided into a light-transmitting area and a non-light-transmitting area, and the The part of the light-transmitting area includes a plurality of transparent films, wherein at least one of the transparent films is the film provided by the embodiment of the present invention.

It should be noted that part of the transparent film located in the light-transmitting region may also extend to the non-transmitting region, that is, the transparent film is located on the substrate and covers the light-transmitting region and the non-transmitting region. The display substrate can be applied to a liquid crystal display device, and can also be applied to an organic light emitting diode display device.

Optionally, the display substrate is an array substrate, and one of the transparent thin films in each pixel structure is a part of a gate insulating layer, or a part of a passivation layer. As shown in FIG. 4 , both the gate insulating layer 7 and the passivation layer 8 on the array substrate include at least three sublayers. Certainly, the transparent thin film may also be a pixel electrode layer on the array substrate. In addition, the display substrate may also be a color filter substrate, and the transparent thin film is the common electrode layer on the color filter substrate located in the light-transmitting area, and the light passes through each thin film that will cause light loss.

An embodiment of the present invention provides a substrate for display, including: a substrate and a plurality of pixel structures arranged on the substrate; the pixel structure is divided into a light-transmitting area and a non-light-transmitting area, and the The part of the light-transmitting area includes a plurality of transparent films, and the refractive indices of at least three adjacent transparent films in the plurality of transparent films change sequentially in sequence.

Specifically, the refractive index may be sequentially changed according to the sequence of arrangement, may be sequentially decreased according to the sequence of arrangement, or may be sequentially increased according to the sequence of arrangement. In the embodiment of the present invention, the substrate may also be a transparent film. As shown in FIG. 4, the array substrate is provided with a gate insulating layer 7, a passivation layer 8 and a pixel electrode 5 in sequence on the substrate 1, and the gate insulating layer 7 is arranged on the passivation layer in each pixel structure. 8 and substrate 1. The refractive indices of the at least three adjacent transparent films change sequentially according to the arrangement order, and the refractive index of the gate insulating layer may be between the refractive index of the substrate and the refractive index of the passivation layer, that is, The refractive indices of the substrate, the gate insulating layer and the passivation layer change sequentially. The light transmittance of the array substrate can be improved, and the brightness of the display panel can be improved under the same light intensity. The refractive index of the at least three adjacent transparent thin films changes sequentially according to the arrangement order, and the refractive index of the adjacently arranged gate insulating layer, passivation layer and pixel electrode may also change sequentially. Of course, the refractive index of each thin film may also change sequentially from the lowest layer to the topmost layer, that is, the refractive index of the substrate, gate insulating layer, passivation layer and pixel electrode may also change sequentially.

It should be noted that part of the transparent film located in the light-transmitting region may also extend to the non-transmitting region, that is, the transparent film is located on the substrate and covers the light-transmitting region and the non-transmitting region. The display substrate can be applied to a liquid crystal display device, and can also be applied to an organic light emitting diode display device.

The present invention provides a display device, including the array substrate provided by the embodiment of the present invention. The display device can be a display device such as a liquid crystal display, an electronic paper, an OLED (Organic Light-Emitting Diode, organic light-emitting diode) display, and any product or component with a display function such as a TV, a digital camera, a mobile phone, a tablet computer, etc. that include these display devices .

The above is only a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Anyone skilled in the art can easily think of changes or substitutions within the technical scope disclosed in the present invention. All should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention should be determined by the protection scope of the claims.

Claims (2)

1. A substrate for display, comprising: a substrate and a plurality of pixel structures arranged on the substrate; the pixel structure is divided into a light-transmitting area and a non-light-transmitting area, and the pixel structure is located Part of the zone includes a plurality of transparent films, characterized in that the refractive indices of at least three adjacent transparent films in the plurality of transparent films change sequentially in sequence; A gate insulating layer, a passivation layer, and a pixel electrode are sequentially arranged on the substrate, and the refractive indices of at least three adjacent transparent films among the plurality of transparent films change sequentially according to the arrangement sequence, specifically: the gate insulating layer, The refractive index of the passivation layer and the pixel electrode changes sequentially. 2. A display device comprising the display substrate according to claim 1.