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CN103178055B - LED device - Google Patents

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CN103178055B
CN103178055B CN201110430355.0A CN201110430355A CN103178055B CN 103178055 B CN103178055 B CN 103178055B CN 201110430355 A CN201110430355 A CN 201110430355A CN 103178055 B CN103178055 B CN 103178055B
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light
emitting diode
internal resistance
characteristic curve
adjusting module
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CN103178055A (en
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张忠凯
李顺昌
洪诚禧
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Everlight Electronics Co Ltd
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Everlight Electronics Co Ltd
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Abstract

A light emitting diode device comprises a first adjusting module and a second adjusting module. The first adjusting module comprises at least one first light emitting diode with a first internal resistance, and the first internal resistance has a first characteristic curve. The first characteristic curve covers a region including a first non-fully conducting region and a first conducting region, and the first internal resistance exponentially decays in the first non-fully conducting region as the current increases from a zero value to a high value, and the first conducting region is linear. The second adjusting module comprises an impedance providing element and an electronic element which are connected in series, and the second adjusting module is electrically connected with the first adjusting module in parallel. The second adjusting module has a second internal resistance, and the second internal resistance has a second characteristic curve, wherein the first characteristic curve and the second characteristic curve are matched with each other.

Description

发光二极管装置LED device

技术领域 technical field

本发明是有关于一种发光二极管的电路设计,且特别是有关于一种发光二极管装置的结构。The present invention relates to a circuit design of a light emitting diode, and in particular to a structure of a light emitting diode device.

背景技术 Background technique

近来,随着发光二极管(lightemittingdiode,LED)的制造技术提升,相关的发光亮度与发光效率持续地增加,并且发光二极管的应用范围越来越普及。Recently, as the manufacturing technology of light emitting diodes (LEDs) improves, the related luminous brightness and luminous efficiency continue to increase, and the application range of light emitting diodes is becoming more and more popular.

传统上为了顺利且稳定地驱动发光二极管发光,会在电路设计上使用限流电阻,用来提供定电流以驱动发光二极管发光。然而,在传统的驱动架构下,所搭配的发光二极管在温度改变时,会使发光二极管在色温的表现上有偏移的现象。举例而言,蓝光LED随温度变化的发光强度改变最小,基本上不受温度变化的任何影响。绿光LED在温度由20℃上升至80℃时,其发光强度大约下降15%。红光LED在温度由20℃上升至40℃时,其发光强度大约下降15%。所以,红光LED的发光强度随着温度变化而改变的程度比蓝光LED的发光强度随着温度变化而改变的程度还要大。也就是说,红光LED的光衰特性比蓝光LED的光衰特性还要严重。Traditionally, in order to drive light-emitting diodes to emit light smoothly and stably, current-limiting resistors are used in circuit design to provide constant current to drive light-emitting diodes to emit light. However, under the traditional driving architecture, when the temperature of the matched LEDs changes, the color temperature of the LEDs will shift. For example, blue LEDs have minimal changes in luminous intensity with temperature changes, and are basically not affected by any temperature changes. When the temperature of green LED rises from 20°C to 80°C, its luminous intensity drops by about 15%. When the temperature of a red LED rises from 20°C to 40°C, its luminous intensity drops by about 15%. Therefore, the degree to which the luminous intensity of red LEDs changes with temperature changes is greater than that of blue LEDs. In other words, the light attenuation characteristics of red LEDs are more serious than those of blue LEDs.

发明内容 Contents of the invention

有鉴于此,本发明提出一种发光二极管装置,借以解决现有技术中存在的问题。In view of this, the present invention proposes a light emitting diode device to solve the problems existing in the prior art.

本发明实施例提出一种发光二极管装置,其包括第一调整模块以及第二调整模块。第一调整模块包括具有第一内阻的至少一第一发光二极管,用以接收一第一电流,而第一内阻与第一电流之间具有第一特性曲线,第一特性曲线所涵盖的区域包括第一非完全导通区与第一导通区,且第一内阻随着第一电流由零值往上增加时在第一非完全导通区呈现指数衰减,而在第一导通区呈现线性。第二调整模块包括串联的阻抗提供元件及电子元件,而第二调整模块与第一调整模块电性并联,用以接收一第二电流,且第二调整模块具有第二内阻,而第二内阻与第二电流之间具有第二特性曲线,第二特性曲线所涵盖的区域包括第二非完全导通区与第二导通区,且第二内阻随着第二电流由零值往上增加时在第二非完全导通区呈现指数衰减,而在第二导通区呈现线性。其中第一特性曲线与第二特性曲线相互匹配。An embodiment of the present invention provides a light emitting diode device, which includes a first adjustment module and a second adjustment module. The first adjustment module includes at least one first light-emitting diode with a first internal resistance for receiving a first current, and there is a first characteristic curve between the first internal resistance and the first current, and the first characteristic curve covers The region includes the first non-complete conduction region and the first conduction region, and the first internal resistance exhibits exponential decay in the first non-complete conduction region as the first current increases from zero, while in the first conduction region The pass region is linear. The second adjustment module includes impedance providing elements and electronic components connected in series, and the second adjustment module is electrically connected in parallel with the first adjustment module to receive a second current, and the second adjustment module has a second internal resistance, and the second adjustment module There is a second characteristic curve between the internal resistance and the second current, the area covered by the second characteristic curve includes the second incomplete conduction region and the second conduction region, and the second internal resistance changes from zero to zero with the second current When it increases upwards, it shows exponential decay in the second non-complete conduction region, but it shows linearity in the second conduction region. Wherein the first characteristic curve and the second characteristic curve match each other.

在本发明的一实施例中,阻抗提供元件为正温度系数的半导体元件或热敏电阻。In an embodiment of the present invention, the impedance providing element is a positive temperature coefficient semiconductor element or a thermistor.

在本发明的一实施例中,电子元件为二极管、齐纳二极管、发光二极管、二极管阵列、齐纳二极管阵列或发光二极管阵列。In an embodiment of the present invention, the electronic component is a diode, Zener diode, LED, diode array, Zener diode array or LED array.

在本发明的一实施例中,发光二极管装置还包括第三调整模块。第三调整模块包括至少一第二发光二极管。第三调整模块分别与第一调整模块、第二调整模块串联。In an embodiment of the invention, the LED device further includes a third adjustment module. The third adjustment module includes at least one second light emitting diode. The third adjustment module is connected in series with the first adjustment module and the second adjustment module respectively.

在本发明的一实施例中,第一发光二极管能激发出具有第一波长的第一光线,而第二发光二极管能激发出具有第二波长的第二光线,且第一波长与第二波长相异。In an embodiment of the present invention, the first light-emitting diode can excite the first light with the first wavelength, and the second light-emitting diode can excite the second light with the second wavelength, and the first wavelength and the second wave They look different.

在本发明的一实施例中,第一发光二极管与第二发光二极管分别为红光发光二极管与蓝光发光二极管。In an embodiment of the present invention, the first light emitting diode and the second light emitting diode are red light emitting diodes and blue light emitting diodes respectively.

从另一观点来看,本发明实施例提出一种发光二极管装置,其包括第一二极管阵列、以及串联的第二二极管阵列与阻抗提供元件。第一二极管阵列包括具有第一内阻的多个个第一发光二极管,用以接收一第一电流,而第一内阻与第一电流之间具有第一特性曲线,第一特性曲线所涵盖的区域包括第一非完全导通区与第一导通区,且第一内阻随着第一电流由零值往上增加时在第一非完全导通区呈现指数衰减,而在第一导通区呈现线性。串联的第二二极管阵列与阻抗提供元件用来与第一二极管阵列电性并联,用以接收一第二电流,而串联的第二二极管阵列与阻抗提供元件具有第二内阻,而第二内阻与第二电流之间具有第二特性曲线,第二特性曲线所涵盖的区域包括第二非完全导通区与第二导通区,且第二内阻随着第二电流由零值往上增加时在第二非完全导通区呈现指数衰减,而在第二导通区呈现线性。其中第一特性曲线与第二特性曲线相互匹配。From another point of view, an embodiment of the present invention provides a light emitting diode device, which includes a first diode array, a second diode array and an impedance providing element connected in series. The first diode array includes a plurality of first light-emitting diodes with a first internal resistance for receiving a first current, and there is a first characteristic curve between the first internal resistance and the first current, and the first characteristic curve The covered area includes the first incomplete conduction region and the first conduction region, and the first internal resistance exhibits an exponential decay in the first incomplete conduction region as the first current increases from zero, and in the first incomplete conduction region The first conduction region is linear. The second diode array and the impedance providing element connected in series are used to be electrically connected in parallel with the first diode array to receive a second current, and the second diode array and the impedance providing element connected in series have a second internal Resistance, and there is a second characteristic curve between the second internal resistance and the second current, the area covered by the second characteristic curve includes the second incomplete conduction region and the second conduction region, and the second internal resistance increases with the first When the second current increases from zero to upward, it exhibits exponential decay in the second non-complete conduction region, and exhibits linearity in the second conduction region. Wherein the first characteristic curve and the second characteristic curve match each other.

在本发明的一实施例中,第二二极管阵列为二极管、齐纳二极管或发光二极管所形成的阵列。In an embodiment of the present invention, the second diode array is an array formed of diodes, Zener diodes or light emitting diodes.

在本发明的一实施例中,发光二极管装置更包括第三二极管阵列。第三二极管阵列包括多个个第二发光二极管,第三二极管阵列分别与第一二极管阵列、串联的第二二极管阵列与阻抗提供元件串联。In an embodiment of the invention, the LED device further includes a third diode array. The third diode array includes a plurality of second light-emitting diodes, and the third diode array is connected in series with the first diode array and the second diode array connected in series with the impedance providing element.

基于上述,本发明的发光二极管装置的结构因采用第一调整模块与第二调整模块的电性并联,第一调整模块具有至少一发光二极管,而第二调整模块包括串联的阻抗提供元件及电子元件。利用第一调整模块的第一特性曲线与第二调整模块的第二特性曲线相互匹配,使得发光二极管装置可以动态地调光而减少色温偏移的范围,且可在高温时进行发光亮度补偿,从而避免高温热衰的问题。Based on the above, the structure of the light-emitting diode device of the present invention adopts the electrical parallel connection of the first adjustment module and the second adjustment module, the first adjustment module has at least one light-emitting diode, and the second adjustment module includes a series impedance providing element and electronic element. The first characteristic curve of the first adjustment module is matched with the second characteristic curve of the second adjustment module, so that the light emitting diode device can be dynamically adjusted to reduce the range of color temperature deviation, and the luminous brightness compensation can be performed at high temperature, So as to avoid the problem of high temperature heat decay.

基于上述,本发明还提出一种发光二极管装置,包括一第一发光二极管阵列、串联的一第二发光二极管阵列与一阻抗提供元件。第一发光二极管阵列包括一第一内阻,用以接收一第一电流,而第一内阻与第一电流之间具有一第一特性曲线。串联的一第二发光二极管阵列与一阻抗提供元件与第一发光二极管阵列电性并联,用以接收一第二电流。而串联的第二发光二极管阵列与阻抗提供元件具有一第二内阻,而第二内阻与第二电流之间具有一第二特性曲线。其中第一特性曲线与第二特性曲线相互匹配。Based on the above, the present invention also proposes a light emitting diode device, which includes a first light emitting diode array, a second light emitting diode array and an impedance providing element connected in series. The first LED array includes a first internal resistance for receiving a first current, and there is a first characteristic curve between the first internal resistance and the first current. A second LED array connected in series and an impedance providing element are electrically connected in parallel with the first LED array for receiving a second current. The second LED array and the impedance providing element connected in series have a second internal resistance, and there is a second characteristic curve between the second internal resistance and the second current. Wherein the first characteristic curve and the second characteristic curve match each other.

其中第一特性曲线所涵盖的区域包括一第一非完全导通区与一第一导通区,且第一内阻随着第一电流由零值往上增加时在第一非完全导通区呈现指数衰减,而在第一导通区呈现线性。第二特性曲线所涵盖的区域包括一第二非完全导通区与一第二导通区,且第二内阻随着第二电流由零值往上增加时在第二非完全导通区呈现指数衰减,而在第二导通区呈现线性。Wherein the area covered by the first characteristic curve includes a first non-complete conduction region and a first conduction region, and the first internal resistance increases with the first current from zero to the first non-complete conduction region. region exhibits exponential decay, while it exhibits linearity in the first conduction region. The area covered by the second characteristic curve includes a second incomplete conduction region and a second conduction region, and the second internal resistance is in the second incomplete conduction region when the second current increases from zero to upward Shows exponential decay, and shows linearity in the second conduction region.

其中第一发光二极管阵列及第二发光二极管阵列分别为多个个红光发光二极管所形成的阵列,第一内阻与第二发光二极管阵列的内阻实质上相等。Wherein the first LED array and the second LED array are respectively arrays formed by a plurality of red LEDs, and the first internal resistance is substantially equal to the internal resistance of the second LED array.

其中阻抗提供元件为正温度系数的半导体元件或热敏电阻。The impedance providing element is a semiconductor element or a thermistor with a positive temperature coefficient.

为让本发明的上述特征和优点能更明显易懂,下文特举实施例,并配合所附图式作详细说明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings.

附图说明 Description of drawings

下面的所附图式是本发明的说明书的一部分,绘示了本发明的示例实施例,所附图式与说明书的描述一起说明本发明的原理。The accompanying drawings, which follow and constitute a part of the specification of the invention, illustrate example embodiments of the invention and together with the description explain the principles of the invention.

图1A是依照本发明一实施例的发光二极管装置的示意图。FIG. 1A is a schematic diagram of a light emitting diode device according to an embodiment of the invention.

图1B是绘示本发明一实施例的内阻对应电流的关系图。FIG. 1B is a graph showing the relationship between internal resistance and current according to an embodiment of the present invention.

图2A是依照本发明一实施例的发光二极管装置的示意图。FIG. 2A is a schematic diagram of a light emitting diode device according to an embodiment of the invention.

图2B是依照本发明一实施例的内阻对应电流的关系图。FIG. 2B is a relationship diagram of internal resistance versus current according to an embodiment of the invention.

图2C是依照本发明另一实施例的内阻对应电流的关系图。FIG. 2C is a relationship diagram of internal resistance versus current according to another embodiment of the present invention.

图3是依照本发明另一实施例的发光二极管装置的示意图。FIG. 3 is a schematic diagram of a light emitting diode device according to another embodiment of the present invention.

图4A是依照本发明一实施例的发光二极管装置的示意图。FIG. 4A is a schematic diagram of a light emitting diode device according to an embodiment of the invention.

图4B是依照本发明一实施例的发光二极管装置的示意图。FIG. 4B is a schematic diagram of a light emitting diode device according to an embodiment of the invention.

主要元件符号说明:Description of main component symbols:

100、200、300、400A、400B:发光二极管装置100, 200, 300, 400A, 400B: LED devices

110、350:发光二极管阵列110, 350: LED array

110A、120A、150_1~150_4:特性曲线110A, 120A, 150_1~150_4: characteristic curve

120、422:阻抗提供元件120, 422: Impedance providing components

130A、230A:非完全导通区130A, 230A: non-complete conduction area

130B、230B:导通区130B, 230B: conduction area

140:发光二极管阵列140: LED array

150:调整模块150: Tuning Module

351~355:发光二极管351~355: LED

410:第一调整模块410: The first adjustment module

412:第一发光二极管412: First LED

420:第二调整模块420: Second adjustment module

424:电子元件424: Electronic components

430:第三调整模块430: The third adjustment module

432:第二发光二极管432: Second LED

ID、ID1、ID2、ID3:驱动电流ID, ID1, ID2, ID3: drive current

RD、RD1、RD2:内阻RD, RD1, RD2: internal resistance

具体实施方式 detailed description

现将详细参考本发明的实施例,并在附图中说明所述实施例的实例。另外,凡可能之处,在图式及实施方式中使用相同标号的元件/构件代表相同或类似部分。Reference will now be made in detail to embodiments of the invention, examples of which are illustrated in the accompanying drawings. In addition, wherever possible, elements/members using the same reference numerals in the drawings and embodiments represent the same or similar parts.

图1A是依照本发明一实施例的发光二极管装置的示意图。请参阅图1A。发光二极管装置100包括发光二极管阵列110以及阻抗提供元件120。发光二极管阵列110包括多个个发光二极管。阻抗提供元件120与发光二极管阵列110相互电性并联。阻抗提供元件120会依据环境温度来调整所提供的内阻RD,而阻抗提供元件120可为正温度系数的半导体元件或热敏电阻,例如是正温度系数(PositiveTemperatureCoefficient,PTC)的半导体元件或热敏电阻,用来补偿发光二极管因温度变化的发光亮度。也就是说,当驱动电流ID时,依据克希荷夫电流定律(Kirchhoff′scircuitlaws),驱动电流ID会分成两驱动电流ID1及ID2。驱动电流ID1则分流至发光二极管阵列110的此些发光二极管,驱动电流ID2则流至阻抗提供元件120。并且,驱动电流ID的电流值大小恰等于驱动电流ID1及ID2的电流值大小的和。其中,发光二极管阵列110两端的跨压以及阻抗提供元件120两端的跨压为相同。FIG. 1A is a schematic diagram of a light emitting diode device according to an embodiment of the invention. See Figure 1A. The LED device 100 includes a LED array 110 and an impedance providing element 120 . The LED array 110 includes a plurality of LEDs. The impedance providing element 120 and the LED array 110 are electrically connected in parallel with each other. The impedance providing element 120 will adjust the provided internal resistance RD according to the ambient temperature, and the impedance providing element 120 can be a semiconductor element or a thermistor with a positive temperature coefficient, such as a semiconductor element or a thermistor with a positive temperature coefficient (PositiveTemperatureCoefficient, PTC). The resistor is used to compensate the light-emitting brightness of the light-emitting diode due to temperature changes. That is to say, when driving the current ID, the driving current ID will be divided into two driving currents ID1 and ID2 according to Kirchhoff's circuit laws. The driving current ID1 is shunted to the LEDs of the LED array 110 , and the driving current ID2 is flowed to the impedance providing element 120 . Moreover, the current value of the driving current ID is exactly equal to the sum of the current values of the driving currents ID1 and ID2 . Wherein, the voltage across the two ends of the LED array 110 and the voltage across the impedance providing element 120 are the same.

在此,驱动电流ID1及ID2的电流值大小是由阻抗提供元件120所提供的内阻RD以及发光二极管阵列110的内阻RD1的比例来决定的。请特别注意,在本实施例中,阻抗提供元件120所提供的内阻RD是与环境温度的高低成正比的。在本实施例中,当阻抗提供元件120例如是正温度系数的半导体元件或热敏电阻时,其内阻RD与环境温度成反比。也就是说,当环境温度升高时,阻抗提供元件120的内阻RD减少。当环境温度降低时,阻抗提供元件120的内阻RD增加。Here, the current values of the driving currents ID1 and ID2 are determined by the ratio of the internal resistance RD provided by the impedance providing element 120 to the internal resistance RD1 of the LED array 110 . Please note that in this embodiment, the internal resistance RD provided by the impedance providing element 120 is proportional to the ambient temperature. In this embodiment, when the impedance providing element 120 is, for example, a positive temperature coefficient semiconductor element or a thermistor, its internal resistance RD is inversely proportional to the ambient temperature. That is, as the ambient temperature increases, the internal resistance RD of the impedance providing element 120 decreases. When the ambient temperature decreases, the internal resistance RD of the impedance providing element 120 increases.

简单来说,当阻抗提供元件120所提供的内阻RD大于发光二极管阵列110的内阻RD1时,驱动电流ID1的电流值会大于驱动电流ID2的电流值。相反的,若是当阻抗提供元件120所提供的内阻RD小于发光二极管阵列110的内阻RD1时,驱动电流ID1的电流值会小于驱动电流ID2的电流值。当然,当阻抗提供元件120所提供的内阻RD与发光二极管阵列110的内阻RD1相等时,驱动电流ID被平均分配至驱动电流ID1及ID2。In short, when the internal resistance RD provided by the impedance providing element 120 is greater than the internal resistance RD1 of the LED array 110 , the current value of the driving current ID1 is greater than the current value of the driving current ID2 . On the contrary, if the internal resistance RD provided by the impedance providing element 120 is smaller than the internal resistance RD1 of the LED array 110 , the current value of the driving current ID1 will be smaller than the current value of the driving current ID2 . Certainly, when the internal resistance RD provided by the impedance providing element 120 is equal to the internal resistance RD1 of the LED array 110 , the driving current ID is evenly distributed to the driving currents ID1 and ID2 .

由上述的说明可以清楚的得知,在发光二极管装置100进行长时间的操作时,阻抗提供元件120对应着随时间升高的环境温度来调高其所提供的内阻RD。而随着内阻RD的上升,分流至发光二极管阵列110的驱动电流ID1也会随着增加。这个随环境温度上升的驱动电流ID1,则可以有效地补偿因环境温度上升而导致原先(未补偿前)应该下降的发光二极管阵列110的发光亮度,从而弥补发光二极管的光衰特性。It can be clearly known from the above description that when the light emitting diode device 100 is operated for a long time, the impedance providing element 120 increases the internal resistance RD provided by it corresponding to the ambient temperature increasing with time. As the internal resistance RD increases, the driving current ID1 shunted to the LED array 110 will also increase accordingly. The driving current ID1 that rises with the ambient temperature can effectively compensate the luminance of the LED array 110 that should have decreased due to the ambient temperature rise (before compensation), thereby compensating for the light decay characteristic of the LEDs.

图1B是绘示本发明一实施例的内阻对应电流的关系图。请合并参阅图1A和图1B。当发光二极管阵列110以多个红光发光二极管来实施时,其等效的内阻RD1经实际量测为特性曲线110A,而阻抗提供元件120的内阻RD经实际量测为特性曲线120A,且特性曲线120A在电流0~46mA的范围呈现直线,而在大于46mA的范围呈现上扬弯曲的曲线。特性曲线120A在于表示阻抗提供元件120的内阻RD于小电流区段中大约维持为较小的固定值,但于大电流区段中大约维持较大的上扬值。FIG. 1B is a graph showing the relationship between internal resistance and current according to an embodiment of the present invention. Please refer to Figure 1A and Figure 1B together. When the light-emitting diode array 110 is implemented with a plurality of red light-emitting diodes, its equivalent internal resistance RD1 is actually measured as a characteristic curve 110A, and the internal resistance RD of the impedance providing element 120 is actually measured as a characteristic curve 120A, Moreover, the characteristic curve 120A presents a straight line in the range of current 0-46mA, and an upward curved curve in the range of more than 46mA. The characteristic curve 120A indicates that the internal resistance RD of the impedance providing element 120 maintains a relatively small fixed value in the low current segment, but maintains a relatively large rising value in the high current segment.

在图1B的绘示中,特性曲线110A是量自于以三串红光发光二极管串且每一串作并联的阻值变化,且特性曲线110A所涵盖的区域包括非完全导通区130A与导通区130B,其中非完全导通区130A介于电流0~23mA的区域,而导通区130B介于电流23~80mA或23mA以上的区域。在非完全导通区130A,发光二极管阵列110的内阻RD1随着电流减小而呈现指数递增的变化,越来越接近阻抗提供元件120的内阻RD2,甚至超越过阻抗提供元件120的内阻RD2很多,产生阻值不匹配的问题;而在导通区130B,内阻RD1随着电流增加而呈现线性,大约维持为固定值,但比阻抗提供元件120的内阻RD2还要小。另一方面,特性曲线120A的内阻相对电流0~46mA的范围呈现线性关系,大约维持为较小的固定值。由于发光二极管阵列110的内阻RD1在不同电流条件下的阻值不一样,这会造成发光二极管阵列110与阻抗提供元件120的阻值不匹配,在低电流(例如,低于或等于15mA)的情况下,大部分的电流分流至阻抗提供元件120,但剩余小部分的电流分至发光二极管阵列110。因此,造成了发光二极管阵列110在电流15mA至80mA,甚至到200mA的区间无法发挥实质发光效率而衍生出大约2000K的色温偏移,其中K为凯氏(Kelvins)温标。请需要注意的是,本发明的发光二极管阵列110并不限于以红光发光二极管来实施,且特性曲线所相应的直轴的电流数值与横轴欧姆数值不限于本实例所列出的数值。一切端视实际设计需求而论。In the illustration of FIG. 1B , the characteristic curve 110A is measured from the change in the resistance value of three strings of red light emitting diodes connected in parallel, and the area covered by the characteristic curve 110A includes the non-complete conduction region 130A and The conduction region 130B, wherein the non-complete conduction region 130A is in the region of current 0-23mA, and the conduction region 130B is in the region of current 23-80mA or above 23mA. In the non-complete conduction region 130A, the internal resistance RD1 of the light emitting diode array 110 presents an exponentially increasing change as the current decreases, getting closer to the internal resistance RD2 of the impedance providing element 120, and even exceeding the internal resistance of the impedance providing element 120. There are many resistors RD2 , resulting in the problem of mismatched resistance values; while in the conduction region 130B, the internal resistance RD1 is linear with the increase of current, approximately maintaining a constant value, but smaller than the internal resistance RD2 of the impedance providing element 120 . On the other hand, the internal resistance of the characteristic curve 120A exhibits a linear relationship with respect to the current range of 0-46 mA, and approximately maintains a small fixed value. Since the internal resistance RD1 of the light-emitting diode array 110 has different resistance values under different current conditions, this will cause a mismatch between the resistance values of the light-emitting diode array 110 and the impedance providing element 120. In the case of , most of the current is shunted to the impedance providing element 120 , but the remaining small portion of the current is shunted to the LED array 110 . Therefore, the light-emitting diode array 110 cannot exert substantial luminous efficiency in the current range of 15mA to 80mA, or even 200mA, resulting in a color temperature shift of about 2000K, where K is the Kelvins temperature scale. Please note that the LED array 110 of the present invention is not limited to be implemented with red LEDs, and the current value on the direct axis and the ohm value on the horizontal axis corresponding to the characteristic curve are not limited to the values listed in this example. Everything depends on the actual design requirements.

图2A是依照本发明一实施例的发光二极管装置的示意图。图2B是依照本发明一实施例的内阻对应电流的关系图。请合并参阅图2A和图2B。为了进一步改进色温偏移的问题,发光二极管装置200包括发光二极管阵列110以及调整模块150,其中调整模块150包括串联的阻抗提供元件120与二极管阵列140。而调整模块150用来与发光二极管阵列110电性并联。在本实施例中,调整模块150可以提供电阻变化的角色,实际上不贡献亮度。在另一实施例中,调整模块150不仅可以提供电阻变化的角色,也可以贡献亮度。FIG. 2A is a schematic diagram of a light emitting diode device according to an embodiment of the invention. FIG. 2B is a relationship diagram of internal resistance versus current according to an embodiment of the invention. Please refer to Figure 2A and Figure 2B together. In order to further improve the problem of color temperature shift, the LED device 200 includes a LED array 110 and an adjustment module 150 , wherein the adjustment module 150 includes an impedance providing element 120 and a diode array 140 connected in series. The adjustment module 150 is used to be electrically connected in parallel with the LED array 110 . In this embodiment, the adjustment module 150 can provide the role of the resistance change, and actually does not contribute to the brightness. In another embodiment, the adjustment module 150 can not only provide the role of resistance variation, but also contribute brightness.

发光二极管阵列110包括具有内阻RD1的多个第一发光二极管,而经实际量测内阻RD1,其具有特性曲线110A,特性曲线110A可参见前述实施例的说明,在此不多详述。The light emitting diode array 110 includes a plurality of first light emitting diodes having an internal resistance RD1, and the internal resistance RD1 has a characteristic curve 110A after actual measurement.

二极管阵列140可使用二极管、齐纳二极管或发光二极管所形成的阵列,用以与发光二极管阵列110的电阻及电流变化特性有相似或相同的变化。在本实施例中,二极管阵列140的内阻大约与发光二极管阵列110的内阻RD1相等。而调整模块150具有等效的内阻RD2。此内阻RD2经实际量测而具有呈现出类似或等同于特性曲线150_1~150_4的变化,阻抗提供元件120例如是PTC。其中特性曲线150_1是量自于以红光发光二极管串接PTC(15欧姆)的阻值变化,特性曲线150_2是量自于以红光发光二极管串接PTC(150欧姆)的阻值变化,特性曲线150_3是量自于以红光发光二极管串接PTC(300欧姆)的阻值变化,并且特性曲线150_4是量自于以红光发光二极管串接PTC(450欧姆)的阻值变化。在小电流区段,特性曲线150_4、150_3、150_2、150_1相对于特性曲线110A而言,其电阻随着电流减小而呈现指数递增的一致性趋势。在大电流区段,特性曲线150_4、150_3、150_2、150_1呈现线性关系,每一者大约维持固定值。这些特性曲线在数值关系上,特性曲线150_4、150_3、150_2、150_1依序递减。特性曲线150_4、150_3、150_2相对于特性曲线110A存在明显的间隔(差距),而特性曲线110A与特性曲线150_1在内阻与电流的关系曲线呈现重叠现象。特性曲线150_4、150_3、150_2、150_1、110A所涵盖的区域包括非完全导通区230A与导通区230B,其中非完全导通区230A介于电流0~23mA的区域,而导通区230B介于电流23~80mA或23mA以上的区域。The diode array 140 can be formed of diodes, zener diodes, or light emitting diodes, so as to have similar or identical changes in the resistance and current change characteristics of the light emitting diode array 110 . In this embodiment, the internal resistance of the diode array 140 is approximately equal to the internal resistance RD1 of the LED array 110 . The adjustment module 150 has an equivalent internal resistance RD2. The internal resistance RD2 has a change similar to or equal to the characteristic curves 150_1 - 150_4 through actual measurement, and the impedance providing element 120 is, for example, a PTC. Among them, the characteristic curve 150_1 is measured from the resistance change of a red light emitting diode connected in series with a PTC (15 ohms), and the characteristic curve 150_2 is measured from the resistance value change of a red light emitting diode connected in series with a PTC (150 ohms). Curve 150_3 is measured from the resistance change of PTC (300 ohm) connected in series with red LED, and characteristic curve 150_4 is measured from the resistance change of PTC (450 ohm) connected in series with red LED. In the small current section, the resistance of the characteristic curves 150_4 , 150_3 , 150_2 , 150_1 , compared with the characteristic curve 110A, exhibits a consistent trend of exponential increase as the current decreases. In the high current section, the characteristic curves 150_4 , 150_3 , 150_2 , and 150_1 exhibit a linear relationship, each of which maintains approximately a constant value. In terms of the numerical relationship of these characteristic curves, the characteristic curves 150_4 , 150_3 , 150_2 , and 150_1 decrease in sequence. The characteristic curves 150_4 , 150_3 , 150_2 have obvious intervals (gap) with respect to the characteristic curve 110A, and the relationship curves between the internal resistance and the current of the characteristic curve 110A and the characteristic curve 150_1 overlap. The areas covered by the characteristic curves 150_4, 150_3, 150_2, 150_1, and 110A include the incomplete conduction region 230A and the conduction region 230B, wherein the incomplete conduction region 230A is between the current 0-23mA region, and the conduction region 230B is between In the area where the current is 23-80mA or above 23mA.

图2C是依照本发明另一实施例的内阻对应电流的关系图。请参阅图2C。有鉴于图2B的特性曲线150_4、150_3、150_2相对于特性曲线110A存在间隔(差距)。理想状况下,在常温(摄氏25度)下,PTC的内阻大约趋近为0。在本实施例中,在常温(摄氏25度)下,阻抗提供元件120的设计可依实际情况来选择,用以减小两条特性曲线之间的间隔,例如阻抗提供元件120在常温为15欧姆时,经实验证实了特性曲线110A与150_1会重叠且呈现一致性,即电阻及电流的变化特性重叠且呈现一致性,从而可以应用在非完全导通区与导通区都能相互匹配,亦即内阻RD2可相似比例于内阻RD1作变化。本实施例虽以15欧姆为PTC的最小内阻作说明,但本实施例并不局限在此。FIG. 2C is a relationship diagram of internal resistance versus current according to another embodiment of the present invention. See Figure 2C. Considering that the characteristic curves 150_4 , 150_3 , 150_2 of FIG. 2B have distances (differences) relative to the characteristic curve 110A. Ideally, at room temperature (25 degrees Celsius), the internal resistance of the PTC approaches zero. In this embodiment, at normal temperature (25 degrees Celsius), the design of the impedance providing element 120 can be selected according to the actual situation, so as to reduce the interval between the two characteristic curves. For example, the impedance providing element 120 at normal temperature is 15 Ohms, it has been proved by experiments that the characteristic curves 110A and 150_1 will overlap and be consistent, that is, the change characteristics of resistance and current are overlapping and consistent, so that it can be applied in the non-complete conduction region and the conduction region can match each other, That is to say, the internal resistance RD2 can be changed in a similar proportion to the internal resistance RD1. Although the present embodiment is described with 15 ohms as the minimum internal resistance of the PTC, the present embodiment is not limited thereto.

再者,驱动电流ID分成两驱动电流ID1及ID3。驱动电流ID1及ID3则分别流至发光二极管阵列110以及调整模块150。由于两条特性曲线的阻值在随着电流变大而呈现指数衰减变化,或者是维持线性部分皆为相似的比例,使得内阻RD2与内阻RD1从小电流(接近零电流)至大电流(正常工作的驱动电流)而可以一直维持相似比例,因此驱动电流ID3也具有比例于驱动电流ID1的稳定效果。如此一来,即使驱动电流ID1和ID3是位在非完全导通区,而内阻RD1与RD2仍可以相似比例作变化,因此驱动电流ID3不会远大于驱动电流ID1,故本实施例可用来确保通过发光二极管阵列110与调整模块150的电流比例是固定的,确保发光二极管阵列110实质上发挥亮度,从而减少色温偏移的范围。Furthermore, the driving current ID is divided into two driving currents ID1 and ID3. The driving currents ID1 and ID3 respectively flow to the LED array 110 and the adjustment module 150 . Since the resistance values of the two characteristic curves exhibit exponential decay as the current increases, or maintain a similar ratio in the linear part, the internal resistance RD2 and internal resistance RD1 make the internal resistance RD2 and internal resistance RD1 from small current (close to zero current) to large current ( The driving current for normal operation) can always maintain a similar ratio, so the driving current ID3 also has a stabilizing effect proportional to the driving current ID1. In this way, even if the driving currents ID1 and ID3 are in the non-complete conduction region, the internal resistances RD1 and RD2 can still change in a similar ratio, so the driving current ID3 will not be much greater than the driving current ID1, so this embodiment can be used for Ensuring that the ratio of the current passing through the LED array 110 and the adjustment module 150 is constant, ensures that the LED array 110 substantially exerts brightness, thereby reducing the range of color temperature shift.

因此,发光二极管装置200除了可以动态地调光而减少色温偏移的范围,且可在高温时进行发光亮度补偿,从而避免高温热衰的问题。另一方面,若使用元件的特性曲线110A与特性曲线150_1在内阻与电流的关系曲线非常相似而重叠时,则可进一步将色温偏移的范围降到最小。Therefore, the light emitting diode device 200 can not only dynamically adjust light to reduce the range of color temperature shift, but also can perform brightness compensation at high temperature, so as to avoid the problem of high temperature heat fading. On the other hand, if the characteristic curve 110A and the characteristic curve 150_1 of the element are very similar and overlap, the range of the color temperature shift can be further minimized.

基于上述,以图1A的电路架构为例,虽可弥补发光二极管的光衰特性,但是发光二极管阵列110在电流15mA至200mA的区间会有2000K的色温偏移;而以图2A的电路架构为例,当特性曲线110A与150A重叠时,可将色温偏移2000K收敛至200K,甚至更小。所以,本实施例的发光二极管装置200可以有效地解决传统在驱动发光二极管时因温度改变或驱动电流调变所衍生的亮度与色温偏移的问题。Based on the above, taking the circuit structure of FIG. 1A as an example, although it can compensate for the light decay characteristics of LEDs, the LED array 110 will have a color temperature shift of 2000K in the range of current 15mA to 200mA; and the circuit structure of FIG. 2A is For example, when the characteristic curves 110A and 150A overlap, the color temperature shift of 2000K can be converged to 200K, or even smaller. Therefore, the light-emitting diode device 200 of this embodiment can effectively solve the traditional problem of brightness and color temperature shifts caused by temperature changes or driving current modulation when driving light-emitting diodes.

图3是依照本发明另一实施例的发光二极管装置的示意图。请参阅图3。在本实施方式中,相较于图2A的绘示,发光二极管装置300更可包括发光二极管阵列350。发光二极管阵列350分别与发光二极管阵列110、调整模块150串接,并接收驱动电流ID来进行发光。发光二极管阵列110可包括多个红光发光二极管,而发光二极管阵列350可包括多个非红光发光二极管351~355,发光二极管351~355依序串接。其中,发光二极管351的电流输入端与红光发光二极管的电流输出端电性连接,发光二极管351的电流输入端分别与阻抗提供元件120的电流输出端电性连接。在增加如发光二极管阵列350的设置后,可以改变发光二极管装置300所发送出的光的颜色。发光二极管阵列350的发光二极管可以是并联、串联或串并联混合。FIG. 3 is a schematic diagram of a light emitting diode device according to another embodiment of the present invention. See Figure 3. In this embodiment, compared with the illustration in FIG. 2A , the LED device 300 may further include a LED array 350 . The LED array 350 is connected in series with the LED array 110 and the adjustment module 150 respectively, and receives the driving current ID to emit light. The LED array 110 may include a plurality of red LEDs, and the LED array 350 may include a plurality of non-red LEDs 351-355, and the LEDs 351-355 are sequentially connected in series. Wherein, the current input end of the LED 351 is electrically connected to the current output end of the red LED, and the current input end of the LED 351 is electrically connected to the current output end of the impedance providing element 120 respectively. After adding settings such as the LED array 350, the color of the light emitted by the LED device 300 can be changed. The LEDs of the LED array 350 can be connected in parallel, in series or a combination of series and parallel.

当然,发光二极管阵列350中所包括的非红光发光二极管的数量并不仅限于五颗,可依实际情况来设计。发光二极管阵列350也可改为至少一颗的非红光发光二极管即可来实施。此外,红光发光二极管的光衰特性比非红光发光二极管的光衰特性还要严重且大。Of course, the number of non-red LEDs included in the LED array 350 is not limited to five, and can be designed according to actual conditions. The LED array 350 can also be implemented by changing at least one non-red LED. In addition, the light attenuation characteristics of red light emitting diodes are more severe and greater than those of non-red light emitting diodes.

于本实施例中,红光发光二极管能激发出具有第一波长的第一光线,而非红光发光二极管能激发出具有第二波长的第二光线,且第一波长相异于第二波长。例如,发光二极管阵列350中所包括的非红光发光二极管可以为蓝光发光二极管,或是可发出其他颜色光线的发光二极管,例如是绿光发光二极管、黄光发光二极管、橘光发光二极管、紫外光发光二极管、近蓝光发光二极管或白光发光二极管。In this embodiment, the red light-emitting diode can excite the first light with the first wavelength, and the non-red light-emitting diode can excite the second light with the second wavelength, and the first wavelength is different from the second wavelength . For example, the non-red light-emitting diodes included in the light-emitting diode array 350 can be blue light-emitting diodes, or light-emitting diodes that can emit light of other colors, such as green light-emitting diodes, yellow light-emitting diodes, orange light-emitting diodes, ultraviolet light-emitting diodes, etc. Light-emitting diodes, near-blue light-emitting diodes, or white light-emitting diodes.

基于上述实施例所揭示的内容,可以汇整出一种通用的发光二极管装置。更清楚来说,图4A是依照本发明一实施例的发光二极管装置的示意图。请参阅图4A,发光二极管装置400A包括第一调整模块410以及第二调整模块420。第一调整模块410包括至少一第一发光二极管412,第二调整模块420包括串联的阻抗提供元件422及电子元件424,而第二调整模块410与第一调整模块420电性并联。其中阻抗提供元件422可为正温度系数的半导体元件或热敏电阻,电子元件424可为二极管、齐纳二极管、发光二极管、二极管阵列、齐纳二极管阵列或发光二极管阵列,但不限于所列举的元件种类,只要是能与第一发光二极管412的元件特性产生具有相似或相同变化的特性曲线即可。以下更详细说明特性曲线。Based on the content disclosed in the above embodiments, a general light emitting diode device can be compiled. More clearly, FIG. 4A is a schematic diagram of a light emitting diode device according to an embodiment of the present invention. Please refer to FIG. 4A , the LED device 400A includes a first adjustment module 410 and a second adjustment module 420 . The first adjustment module 410 includes at least one first light emitting diode 412 , the second adjustment module 420 includes an impedance providing element 422 and an electronic element 424 connected in series, and the second adjustment module 410 and the first adjustment module 420 are electrically connected in parallel. The impedance providing element 422 can be a semiconductor element with a positive temperature coefficient or a thermistor, and the electronic element 424 can be a diode, a zener diode, a light emitting diode, a diode array, a zener diode array or a light emitting diode array, but not limited to the listed ones. The type of the device is sufficient as long as it can produce a characteristic curve having a similar or the same change as the device characteristic of the first light emitting diode 412 . The characteristic curves are described in more detail below.

在操作原理上,第一调整模块410具有第一内阻,第二调整模块420具有第二内阻。第一内阻具有第一特性曲线(如图2B或图2C所绘示的特性曲线110A),第一特性曲线所涵盖的区域包括第一非完全导通区(如图2B所绘示的230A)与第一导通区(如图2B所绘示的230B),且第一内阻随着电流由零值往上增加时在第一非完全导通区呈现指数衰减,而在第一导通区呈现线性。而第二内阻具有第二特性曲线(如图2B或图2C所绘示的特性曲线150A),第二特性曲线所涵盖的区域包括第二非完全导通区(如图2B所绘示的230A)与第二导通区(如图2B所绘示的230B),且第二内阻随着电流由零值往上增加时在第二非完全导通区呈现指数衰减,而在第二导通区呈现线性。其中第一特性曲线与第二特性曲线在非完全导通区与导通区都能相互匹配。In operation principle, the first adjustment module 410 has a first internal resistance, and the second adjustment module 420 has a second internal resistance. The first internal resistance has a first characteristic curve (the characteristic curve 110A shown in FIG. 2B or FIG. 2C ), and the area covered by the first characteristic curve includes the first non-complete conduction region (the characteristic curve 110A shown in FIG. 2B ). ) and the first conduction region (230B as shown in FIG. 2B ), and the first internal resistance exhibits exponential decay in the first non-complete conduction region as the current increases from zero, while in the first conduction region The pass region is linear. The second internal resistance has a second characteristic curve (the characteristic curve 150A shown in FIG. 2B or FIG. 2C ), and the area covered by the second characteristic curve includes the second non-complete conduction region (as shown in FIG. 2B 230A) and the second conduction region (230B as shown in FIG. 2B ), and the second internal resistance exhibits an exponential decay in the second non-complete conduction region as the current increases from zero, and in the second The conduction region is linear. Wherein the first characteristic curve and the second characteristic curve can match each other in the incomplete conduction region and the conduction region.

驱动电流ID分成两驱动电流ID1及ID3,并且驱动电流ID的电流值大小恰等于驱动电流ID1及ID3的电流值大小的和。由于第一特性曲线与第二特性曲线相互匹配,因此当驱动电流ID变化时,驱动电流ID3也会与驱动电流ID1成比例作变化,因此本实施例可进一步减少色温偏移的范围。The driving current ID is divided into two driving currents ID1 and ID3, and the current value of the driving current ID is exactly equal to the sum of the current values of the driving currents ID1 and ID3. Since the first characteristic curve and the second characteristic curve match each other, when the driving current ID changes, the driving current ID3 will also change in proportion to the driving current ID1, so this embodiment can further reduce the range of the color temperature shift.

图4B是依照本发明一实施例的发光二极管装置的示意图。请参阅图4B,在本实施方式中,相较于图4A的绘示,发光二极管装置400B更可包括第三调整模块430。第三调整模块430包括至少一第二发光二极管432。第一发光二极管412能激发出具有第一波长的第一光线,而第二发光二极管432能激发出具有第二波长的第二光线,且第一波长与第二波长相异。第三调整模块430分别与第一调整模块410、第二调整模块420串联,并接收驱动电流ID来进行发光。在增加如第三调整模块430的设置后,可以改变发光二极管装置400B所发送出的光的颜色。例如,第一发光二极管412与第二发光二极管432可分别为红光发光二极管与蓝光发光二极管,但本发明并不限制于此。FIG. 4B is a schematic diagram of a light emitting diode device according to an embodiment of the invention. Please refer to FIG. 4B . In this embodiment, compared with the illustration in FIG. 4A , the LED device 400B may further include a third adjustment module 430 . The third adjusting module 430 includes at least one second light emitting diode 432 . The first light emitting diode 412 can excite a first light with a first wavelength, and the second light emitting diode 432 can excite a second light with a second wavelength, and the first wavelength is different from the second wavelength. The third adjustment module 430 is connected in series with the first adjustment module 410 and the second adjustment module 420 respectively, and receives the driving current ID to emit light. After adding settings such as the third adjustment module 430, the color of the light emitted by the LED device 400B can be changed. For example, the first LED 412 and the second LED 432 may be red LEDs and blue LEDs respectively, but the present invention is not limited thereto.

上述实施例所述的电阻、内阻、阻值及阻抗的意思都是一样,其单位都是欧姆。The meanings of the resistance, internal resistance, resistance value and impedance described in the above embodiments are the same, and the unit is ohm.

上述实施例所述的环境温度,可以是发光二极管装置、发光二极管阵列、发光二极管、发光二极管芯片、调整模块、二极管阵列或阻抗提供元件的环境温度。The ambient temperature in the above embodiments may be the ambient temperature of the LED device, LED array, LED, LED chip, adjustment module, diode array or impedance providing element.

在上述实施例所述的发光二极管阵列中,此些发光二极管可以并联、串联或串并联。此外,发光二极管阵列110的此些发光二极管可以是发光二极管芯片(chip)、发光二极管封装结构(package)或以上任意组合。In the LED array described in the above embodiments, the LEDs can be connected in parallel, in series or in series and parallel. In addition, the LEDs of the LED array 110 may be LED chips, LED packages, or any combination thereof.

上述实施例所述的发光二极管可以是红光、绿光、蓝光、白光或以上任意组合的发光二极管,而白光发光二极管可以包含蓝光发光二极管芯片及黄色萤光粉,还可包含红光发光二极管芯片或红色萤光粉。此外,上述白光发光二极管可以包含红光、绿光及蓝光发光二极管芯片,还可包含黄色萤光粉,更进一步可包含红色萤光粉。另外,上述萤光粉以均匀、不均匀或浓度梯度变化的方式分布于上述发光二极管的透光胶体中。The light-emitting diodes described in the above embodiments can be red light, green light, blue light, white light or any combination of the above light-emitting diodes, and the white light-emitting diodes can include blue light-emitting diode chips and yellow phosphor powder, and can also include red light-emitting diodes chip or red phosphor. In addition, the above-mentioned white light-emitting diodes may include red, green and blue light-emitting diode chips, may also include yellow phosphor powder, and may further include red phosphor powder. In addition, the above-mentioned fluorescent powder is distributed in the light-transmitting colloid of the above-mentioned light-emitting diode in a manner of uniformity, non-uniformity or concentration gradient.

综上所述,本发明的发光二极管装置的结构因采用第一调整模块与第二调整模块的电性并联,第一调整模块具有至少一发光二极管,而第二调整模块包括串联的阻抗提供元件及电子元件。利用第一调整模块的第一特性曲线与第二调整模块的第二特性曲线相互匹配,使得发光二极管装置可以动态地调光而减少色温偏移的范围,且可在高温时进行发光亮度补偿,从而避免高温热衰的问题。另一方面,本发明的发光二极管装置亦可应用于室内照明装置、室外照明装置、背光装置或指示装置中。To sum up, the structure of the light emitting diode device of the present invention adopts the electrical parallel connection of the first adjustment module and the second adjustment module, the first adjustment module has at least one light emitting diode, and the second adjustment module includes impedance providing elements connected in series and electronic components. The first characteristic curve of the first adjustment module is matched with the second characteristic curve of the second adjustment module, so that the light emitting diode device can be dynamically adjusted to reduce the range of color temperature deviation, and the luminous brightness compensation can be performed at high temperature, So as to avoid the problem of high temperature heat decay. On the other hand, the LED device of the present invention can also be applied to indoor lighting devices, outdoor lighting devices, backlight devices or indicating devices.

虽然本发明已以较佳实施例揭示如上,然其并非用以限定本发明,任何本领域技术人员,在不脱离本发明的精神和范围内,当可作些许的修改和完善,因此本发明的保护范围当以权利要求书所界定的为准。Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art may make some modifications and improvements without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection should be defined by the claims.

Claims (9)

1. a light-emitting diode assembly, comprising:
One first adjusting module, comprise at least one first light-emitting diode with one first internal resistance, in order to receive one first electric current, and there is between this first internal resistance and this first electric current one first characteristic curve, the region that this first characteristic curve is contained comprises one first non-fully conducting district and one first conducting district, and this first internal resistance presents exponential damping along with when this first electric current is up increased by null value in this first non-fully conducting district, and present linearly in this first conducting district; And
One second adjusting module, the impedance comprising series connection provides element and an electronic component, and this second adjusting module is electrically in parallel with this first adjusting module, in order to receive one second electric current, and this second adjusting module has one second internal resistance, and there is between this second internal resistance and this second electric current one second characteristic curve, the region that this second characteristic curve is contained comprises one second non-fully conducting district and one second conducting district, and this second internal resistance presents exponential damping along with when this second electric current is up increased by null value in this second non-fully conducting district, and present linearly in this second conducting district,
Wherein this first characteristic curve mates mutually with this second characteristic curve, and this electronic component is Zener diode or zener diode array.
2. light-emitting diode assembly as claimed in claim 1, is characterized in that, this impedance provides element to be semiconductor element or the thermistor of positive temperature coefficient.
3. light-emitting diode assembly as claimed in claim 1, also comprises:
One the 3rd adjusting module, comprises at least one second light-emitting diode, and the 3rd adjusting module is connected with this first adjusting module, this second adjusting module respectively.
4. light-emitting diode assembly as claimed in claim 3, it is characterized in that, this first light-emitting diode can inspire the first light that one has a first wave length, and this second light-emitting diode can inspire the second light that one has a second wave length, and this first wave length and this second wave length different.
5. light-emitting diode assembly as claimed in claim 4, it is characterized in that, this first light-emitting diode and this second light-emitting diode are respectively red light-emitting diode and blue light-emitting diode.
6. a light-emitting diode assembly, comprising:
One first light emitting diode matrix, comprises one first internal resistance, in order to receive one first electric current, and has one first characteristic curve between this first internal resistance and this first electric current; And
Zener diode array and an impedance of series connection provide element, electrically in parallel with this first light emitting diode matrix, in order to receive one second electric current, and this zener diode array of series connection and this impedance provide element to have one second internal resistance, and there is between this second internal resistance and this second electric current one second characteristic curve;
Wherein this first characteristic curve mates mutually with this second characteristic curve.
7. light-emitting diode assembly as claimed in claim 6, it is characterized in that, the region that this first characteristic curve is contained comprises one first non-fully conducting district and one first conducting district, and this first internal resistance presents exponential damping along with when this first electric current is up increased by null value in this first non-fully conducting district, and present linearly in this first conducting district: and
The region that this second characteristic curve is contained comprises one second non-fully conducting district and one second conducting district, and this second internal resistance presents exponential damping along with when this second electric current is up increased by null value in this second non-fully conducting district, and present linearly in this second conducting district.
8. light-emitting diode assembly as claimed in claim 6, it is characterized in that, this first light emitting diode matrix and this zener diode array are respectively the array that multiple red light-emitting diode and Zener diode are formed, and this first internal resistance is equal with the internal resistance of this zener diode array.
9. light-emitting diode assembly as claimed in claim 6, is characterized in that, this impedance provides element to be semiconductor element or the thermistor of positive temperature coefficient.
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