CN103187232B - A kind of focusing ring reducing chip back surface generation polymer - Google Patents
A kind of focusing ring reducing chip back surface generation polymer Download PDFInfo
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- CN103187232B CN103187232B CN201110448622.7A CN201110448622A CN103187232B CN 103187232 B CN103187232 B CN 103187232B CN 201110448622 A CN201110448622 A CN 201110448622A CN 103187232 B CN103187232 B CN 103187232B
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- Prior art keywords
- ring
- back surface
- chip back
- focusing ring
- metal oxide
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- 229920000642 polymer Polymers 0.000 title claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 27
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 18
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 238000005260 corrosion Methods 0.000 claims abstract description 8
- 230000007797 corrosion Effects 0.000 claims abstract description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 20
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 11
- 238000001020 plasma etching Methods 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 5
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 3
- MCVFFRWZNYZUIJ-UHFFFAOYSA-M lithium;trifluoromethanesulfonate Chemical compound [Li+].[O-]S(=O)(=O)C(F)(F)F MCVFFRWZNYZUIJ-UHFFFAOYSA-M 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 abstract description 5
- 238000004140 cleaning Methods 0.000 abstract description 2
- 239000013618 particulate matter Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 7
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000013528 metallic particle Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 1
- -1 as quartzy Substances 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 210000004483 pasc Anatomy 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a kind of focusing ring reducing chip back surface generation polymer, described focusing ring comprises interior ring and outer ring, the surface of described interior ring is the metal oxide of anti-plasma corrosion, ensure that the polymer that chip back surface is formed is not siliceous, easy cleaning, simultaneously, only adopt metal oxide materials in interior ring, metal oxide materials directly can not be contacted with plasma, ensure that under plasma bombardment, do not have metal oxide particle pollution condition in plasma processing chamber and occur.Focusing ring main body of the present invention both can adopt semi-conducting material also can adopt insulating material, and structure is simple, obviously can reduce chip back surface and generate polymer.
Description
Technical field
The present invention relates to the manufacture field of semiconductor device, particularly relate to the technical field reducing chip back surface polymer.
Background technology
When semiconductor wafer etches; wafer is placed on the pedestal of plasma etching room; pedestal periphery, usually around arranging a focusing ring, in order to regulate the electric field strength of plasma etching indoor, thus ensures the uniformity of wafer central region and fringe region etching.A narrow gap can be formed between focusing ring and wafer, during etching, plasma etching indoor apply energy so that exciting gas is formed plasma to etching reaction gas (by one or more gas compositions), the material generation chemical reaction on the plasma in reacting gas and focusing ring surface, the marginal portion that the polymer deposition generated comes out at chip back surface, pollutes.The material that making focusing ring can adopt has a lot, and when focusing ring is insulating material, as quartz, during aluminium oxide, focusing ring exposure part in the plasma, by plasma etching, forms metallic particle, causes severe contamination to pending wafer; When focusing ring is for containing semi-conducting material, as carborundum, during the materials such as silicon, plasma and pasc reaction form siliceous polymer, because siliceous polymer is difficult to remove, makes it be gathered in chip back surface, may become the pollution source of Subsequent semiconductor processing procedure.
Summary of the invention
In order to solve the problem of prior art, the invention provides a kind of focusing ring reducing chip back surface generation polymer, its outer circumferential side of pedestal being compassingly set at wafer in a plasma etching room and supporting described wafer, described focusing ring comprises ring and an outer ring in one, described interior ring extends under the edge of chip back surface, the surface of described interior ring is the metal oxide of anti-plasma corrosion, and described outer loop surfaces is semi-conducting material.
Described focusing ring material of main part is carborundum, and the metal oxide of described anti-plasma corrosion is be coated in one or more in yttria, alundum (Al2O3) and the lithium triflate in focusing ring main body.
Described focusing ring material of main part is yttria, and the semi-conducting material of described outer loop surfaces coating is carborundum.
Described focusing ring material of main part is alundum (Al2O3), and the semi-conducting material of described outer loop surfaces coating is silicon.
Described focusing ring comprises bi-material, and described inner ring ring material is yttria, and described outer ring ring material is carborundum.
Described focusing ring comprises bi-material, and described inner ring ring material is alundum (Al2O3), and described outer ring ring material is silicon.
The technique applying the metal oxide of described anti-plasma corrosion is chemical vapour deposition (CVD) or spraying coating process.
The interior loop surfaces material of focusing ring of the present invention adopts the metal oxide of anti-plasma corrosion, the surfacing of outer ring adopts semi-conducting material, ensure that the polymer that chip back surface is formed is not siliceous, easy cleaning, meanwhile, only adopt metal oxide materials in interior ring, metal oxide materials directly can not be contacted with plasma, ensure that under plasma bombardment, do not have metal oxide particle pollution condition in plasma processing chamber and occur.Focusing ring main body of the present invention both can adopt semi-conducting material also can adopt insulating material, and structure is simple, obviously can reduce chip back surface and generate polymer.
Accompanying drawing explanation
By reading the detailed description done non-limiting example with reference to the following drawings, other features, objects and advantages of the present invention will become more obvious:
The plasma etching cell structure schematic diagram that Fig. 1 applies for focusing ring of the present invention;
Fig. 2 be focusing ring of the present invention structural representation;
Embodiment
As shown in Figure 1-2, the present invention specifically discloses a kind of focusing ring reducing chip back surface generation polymer, in plasma etching room 100, has top electrode 10 and bottom electrode 2, top electrode 10 coupled reaction gas source 110, can use as gas injection apparatus simultaneously.As the pedestal of plasma etching indoor while of bottom electrode 2, to support the wafer 1 above it.
Put a focusing ring 4 at wafer 1 and the winding of bottom electrode 2 peripheral ring, between the upper surface of focusing ring 4 and the lower surface of wafer 1, form a narrow gap; Lower surface is seated on a support ring 3, focusing ring 4 comprises interior ring 41 and outer ring 42, interior ring 41 extends under the edge of chip back surface, an edge ring 5 is put in the winding of outer ring 42 outer shroud, edge ring 5 is near plasm reaction cavity wall, interior ring 41 and outer ring 42 can be integrated, also can be separate, and in the present embodiment, ring 41 and outer ring 42 are integrated.
In the present invention, the material of main part of focusing ring 4 can be insulating material, as quartzy, ceramic etc., also can be semi-conducting material, as silicon, carborundum etc.Carborundum is as making the conventional material of focusing ring, generally obtained by chemical vapour deposition (CVD), during etching, in plasma etching room 100, energy is applied so that exciting gas is formed plasma to etching reaction gas (by one or more gas compositions), there is chemical reaction in interior ring 41 surface of the plasma in reacting gas and focusing ring 4, the part that the siliceous polymer deposition generated comes out at chip back surface, due to the more difficult removal of siliceous polymer, therefore increasing polymer can be formed at wafer 1 back side, pollute, affect subsequent reactions process.In order to prevent plasma and interior ring 41 surface from reacting, the metal oxide that the present embodiment corrodes at interior ring 41 surface-coated one deck anti-plasma can be one or more in yittrium oxide, aluminium oxide, lithium fluoride.The technique of the coated metal oxide that the present embodiment adopts is spraying coating process.
The present invention also can select insulating material to make focusing ring, as yittrium oxide, aluminium oxide, lithium fluoride etc., the outer ring 42 of the focusing ring made due to above-mentioned metal oxide exposes in the plasma, forming metallic particle after subject plasma bombardment is present in plasma processing chamber, treat processed wafer to pollute, therefore metal-free material such as the surface-coated carborundum of ring 42 or silicon outside, with normally carrying out of ensureing to react.The technique of described coating silicon carbide or silicon is chemical vapor deposition method.
Embodiment 2: interior ring 41 and the outer ring 42 of the focusing ring 4 described in this enforcement are separate, different materials is adopted to make, the metal oxide materials that described interior ring 41 adopts anti-plasma to corrode, as one or more in yittrium oxide, aluminium oxide, lithium fluoride, the present embodiment adopts aluminium oxide; Outer ring 42 adopts semi-conducting material, and as silicon, carborundum etc., the present embodiment adopts silicon as the material of outer ring 42.Same above-described embodiment of other technologies feature of the present embodiment.
Although the present invention discloses as above with preferred embodiment, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (5)
1. one kind is reduced the focusing ring that chip back surface generates polymer, its outer circumferential side of pedestal being compassingly set at wafer in a plasma etching room and supporting described wafer, described focusing ring comprises ring and an outer ring in one, described interior ring extends under the edge of chip back surface, the upper surface of described interior ring is just to the back side of Waffer edge, and and form gap between the back side of wafer, it is characterized in that: described interior ring and described outer ring are integrally formed, and both material of main parts are identical; The surface of described interior ring is the metal oxide of anti-plasma corrosion, and described outer loop surfaces is semi-conducting material.
2. a kind of focusing ring reducing chip back surface generation polymer according to claim 1, it is characterized in that: the material of main part of described interior ring and described outer ring is carborundum, the metal oxide of described anti-plasma corrosion is be coated in one or more in yttria, alundum (Al2O3) and the lithium triflate in focusing ring main body.
3. a kind of focusing ring reducing chip back surface generation polymer according to claim 1, is characterized in that: the material of main part of described interior ring and described outer ring is yttria, and the semi-conducting material of described outer loop surfaces coating is carborundum.
4. a kind of focusing ring reducing chip back surface generation polymer according to claim 1, is characterized in that: the material of main part of described interior ring and described outer ring is alundum (Al2O3), and the semi-conducting material of described outer loop surfaces coating is silicon.
5. a kind of focusing ring reducing chip back surface generation polymer according to claim 2, is characterized in that: the technique applying the metal oxide of described anti-plasma corrosion is chemical vapour deposition (CVD) or spraying coating process.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110448622.7A CN103187232B (en) | 2011-12-28 | 2011-12-28 | A kind of focusing ring reducing chip back surface generation polymer |
| TW101143726A TW201332013A (en) | 2011-12-28 | 2012-11-22 | Focus ring for reducing polymer at the back of wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110448622.7A CN103187232B (en) | 2011-12-28 | 2011-12-28 | A kind of focusing ring reducing chip back surface generation polymer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103187232A CN103187232A (en) | 2013-07-03 |
| CN103187232B true CN103187232B (en) | 2015-09-16 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110448622.7A Active CN103187232B (en) | 2011-12-28 | 2011-12-28 | A kind of focusing ring reducing chip back surface generation polymer |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103187232B (en) |
| TW (1) | TW201332013A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023239574A1 (en) * | 2022-06-08 | 2023-12-14 | Lam Research Corporation | Chucking system with silane coupling agent |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102136790B1 (en) * | 2013-11-15 | 2020-07-23 | 삼성디스플레이 주식회사 | Flexible display device and the fabrication method thereof |
| CN104008946B (en) * | 2014-06-12 | 2016-09-07 | 上海华力微电子有限公司 | Aluminium etching technics focusing ring, aluminium etching technics |
| CN109423606A (en) * | 2017-08-24 | 2019-03-05 | 中微半导体设备(上海)有限公司 | Focusing ring and its corrosion-resistant means of defence |
| JP7370228B2 (en) * | 2019-11-22 | 2023-10-27 | 東京エレクトロン株式会社 | plasma processing equipment |
| CN113097038B (en) * | 2021-02-25 | 2022-07-15 | 长江存储科技有限责任公司 | Etching device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6464843B1 (en) * | 1998-03-31 | 2002-10-15 | Lam Research Corporation | Contamination controlling method and apparatus for a plasma processing chamber |
| CN101552182A (en) * | 2008-03-31 | 2009-10-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Marginal ring mechanism used in semiconductor manufacture technology |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1518073A (en) * | 2003-01-07 | 2004-08-04 | 东京毅力科创株式会社 | Plasma processing apparatus and focus ring |
| US20070032081A1 (en) * | 2005-08-08 | 2007-02-08 | Jeremy Chang | Edge ring assembly with dielectric spacer ring |
| JP4571217B2 (en) * | 2006-10-06 | 2010-10-27 | カナン精機株式会社 | Corrosion resistant member and manufacturing method thereof |
| DE202010015933U1 (en) * | 2009-12-01 | 2011-03-31 | Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont | An edge ring arrangement for plasma etching chambers |
-
2011
- 2011-12-28 CN CN201110448622.7A patent/CN103187232B/en active Active
-
2012
- 2012-11-22 TW TW101143726A patent/TW201332013A/en unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6464843B1 (en) * | 1998-03-31 | 2002-10-15 | Lam Research Corporation | Contamination controlling method and apparatus for a plasma processing chamber |
| CN101552182A (en) * | 2008-03-31 | 2009-10-07 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Marginal ring mechanism used in semiconductor manufacture technology |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023239574A1 (en) * | 2022-06-08 | 2023-12-14 | Lam Research Corporation | Chucking system with silane coupling agent |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103187232A (en) | 2013-07-03 |
| TW201332013A (en) | 2013-08-01 |
| TWI488237B (en) | 2015-06-11 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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