CN103187943B - Radio-frequency filter for electrostatic chuck - Google Patents
Radio-frequency filter for electrostatic chuck Download PDFInfo
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- CN103187943B CN103187943B CN201110448621.2A CN201110448621A CN103187943B CN 103187943 B CN103187943 B CN 103187943B CN 201110448621 A CN201110448621 A CN 201110448621A CN 103187943 B CN103187943 B CN 103187943B
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- electrostatic chuck
- power supply
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- 238000010438 heat treatment Methods 0.000 claims abstract description 29
- 238000009832 plasma treatment Methods 0.000 claims abstract description 11
- 239000003990 capacitor Substances 0.000 claims abstract description 10
- 238000001914 filtration Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 34
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 229910052742 iron Inorganic materials 0.000 claims description 13
- 239000004020 conductor Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000007669 thermal treatment Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention relates to a multifrequency radio-frequency filter for an electrostatic chuck. The electrostatic chuck is mounted in a plasma treatment device and used for fixing a to-be-treated substrate, wherein the plasma treatment device comprises a radio-frequency power supply provided with a plurality of radio frequencies and connected with a plasma generator; the electrostatic chuck comprises a heating electrode; and the radio-frequency filter is connected between the heating electrode of the electrostatic chuck and a heating power supply. The radio-frequency filter is characterized in that the radio-frequency filter comprises an iron-core inductor, an air inductor and a filter capacitor. A resonant frequency of the filter greater than a to-be-filtered frequency is selected as the resonant frequency of the filter. The radio-frequency filter with the structure can achieve more efficient filtering with a smaller size.
Description
Technical field
The present invention relates to a kind of radio-frequency filter, it is connected with the electrostatic chuck of plasma processing apparatus particularly to a kind of
Radio-frequency filter.
Background technology
In the manufacture process of semiconductor device, in order to be deposited on the semiconductor wafer as substrate, etch
PROCESS FOR TREATMENT, typically carrys out sticking by electrostatic chuck (Electrostatic chuck, abbreviation ESC) generation electrostatic attraction and fixes
With support chip.
As shown in figure 1, electrostatic chuck 200 is generally arranged at the application of vacuum chamber bottom as plasma processing apparatus,
It is connected with radio frequency power source 400 as bottom electrode, and formed between the Top electrode in application of vacuum chamber roof and this bottom electrode and penetrate
Frequency electric field, makes to be occurred ionization to collide by electronics of electric field acceleration etc. with the reactant gas molecules being passed through processing chamber housing, produces reaction
The plasma of gas and chip are reacted.By adjusting this radio frequency power source being connected with the pedestal of electrostatic chuck 200
400, control the density of the plasma generating.
Chip is placed on the dielectric layer 210 of electrostatic chuck 200 top, high-heat-conductivity ceramic material, by dielectric layer
Bury some electrodes 310 in 210 and apply the sticking power supply of direct current respectively, make to produce electrostatic between chip and dielectric layer 210
Gravitation, makes chip firmly be adsorbed on electrostatic chuck 200.Typically it is additionally provided with some heating element heaters in dielectric layer 210
320, by heating dielectric layer 210, even heat is transferred to chip, temperature when controlling chip to process.
Typically require and pass in the temperature control power supply (heater power) 301 being applied to each heating element heater 320 and its temperature
On the detection signal 302 of sensor, it is respectively provided with radio-frequency filter 100 and is filtered so as to export will not be to above-mentioned radio-frequency power
Source 400 interferes.However, modern technologies to control the different qualities of plasma process through commonly using multiple radio-frequency power supplies, such as
Produce plasma with high-frequency radio frequency source such as 40Mhz, 60Mhz or higher frequency.The radio-frequency power supply of lower frequency (is less than
The such as 2Mhz of radio frequency 10Mhz) incides the energy of substrate surface controlling plasma.Just so it is connected to the wave filter of heater
Need to be designed to be able to filter two very big radio-frequency (RF) energy of difference, otherwise these radio-frequency powers can flow backwards along heater circuit,
Damage and be used for the circuit of electrostatic chuck heating.In order to filter such frequency, prior art is generally with the air of multiple series connection
The filter circuit that core inductance is constituted with electric capacity.Although also the circuit with required resonant frequency can be obtained with air-core inductance,
It is the sensibility reciprocal very little due to air-core inductance, will obtain that to be accomplished by coiling corresponding to 2M or more low-frequency radio-frequency (RF) energy hundreds of
The even more coil of circle, not only bulky but also manufacturing cost is high.If adopting less air-core point sense, inductance
The numerical value of amount does not reach requirement again, the very big power supply of 2 incident frequency distance of the coupling that such structure cannot be intact, causes
Final filter effect is not good.
Content of the invention
It is an object of the invention to provide a kind of radio-frequency filter for electrostatic chuck, described electrostatic chuck is arranged on one
It is used for fixing pending substrate in plasma treatment appts, described plasma treatment appts include thering is penetrating of multiple rf frequencies
Frequency power is connected to plasma generator, includes a heating electrode in described electrostatic chuck, and a radio-frequency filter connects
Heat between electrode and a heating power supply it is characterised in that described radio-frequency filter comprises a ferrum in described electrostatic chuck
Core inductance and an air inductor and an electric capacity.Heating power supply can be the power frequency of input or the heating voltage of direct current.
In electrostatic chuck, the heating element heater of setting can be multiple and the different heating region of each correspondence, and this is some
Individual heating element is electrically connected to heating power supply by multiple wave filter.
Wave filter includes an air inductor being serially connected and an iron inductance is electrically connected to described heating power supply
Power input, a filter capacitor is connected between described power input and earth point.
The radio-frequency power supply wherein with multiple rf frequencies exports a high-frequency radio frequency voltage to frequency and a low frequency radio frequency
The voltage of frequency, the resonance circuit that in described wave filter, air inductor is formed with filter capacitor, there is the first resonant frequency and be more than
Described high-frequency radio frequency frequency；The resonance circuit that in described wave filter, iron inductance is formed with filter capacitor, has the second resonance frequency
Rate is more than described low frequency radio frequency frequency and is less than described high-frequency radio frequency frequency.First resonant frequency may be greater than described high frequency and penetrates
Again and again rate 15%, the second resonant frequency may be greater than described low frequency radio frequency frequency 50%.
Wherein said high-frequency radio frequency frequency is more than 40Mhz, and low frequency radio frequency frequency is less than 20Mhz.Iron inductance is in input
There is during low frequency radio frequency frequency the impedance more than 1 kilohm.
The resonance circuit of air-core inductance and iron inductance combination formation can not only be suitable for the very big radio frequency system of frequency phase-difference
System, and there are small volume low cost and other advantages.Due to the employing of iron core, make inductance value be easy for being improved, have more
High adaptability, copes with the radio system of different frequency.The present invention can be not only used for the heating current limliting filter of electrostatic chuck
Ripple is it is also possible to need to multifrequency occasion on a large scale for any in plasma reaction chamber.There is provided such as in electrostatic chuck
The hvdc transmission line of electrostatic, or it is used for some probes that the reaction intracavity signal of telecommunication is detected, need to filter some big
The very big radiofrequency signal of frequency difference, these occasions or part can realize the high-efficient filter to wide range of frequencies using the present invention
Remove.As long as so the conductor being located in reaction chamber can be coupled with multiple rf frequencies, and this conductor is driven with outside
Galvanic electricity road connects to be needed to filter these High-frequency Interference, can adopt present configuration.
Same shape；Similar, in the package parts of multi-layer winding structure, correspondence wears the channel position of multiple conducting wires
Fixing, make formation multiple inductor filter coil shapes also identical it is thus possible to obtain consistent on multiple inductor filter coils
Filter effect, decrease electric arc generation possibility, improve electrostatic chuck work reliability.
Brief description
Fig. 1 is the general structure schematic diagram of the radio-frequency filter of existing electrostatic chuck.
Fig. 2 is to be shown according to the population structure of the radio-frequency filter being used for electrostatic chuck in a specific embodiment of the present invention
It is intended to.
Specific embodiment
Specific embodiment below in conjunction with the brief description present invention.
Embodiment 1
Cooperation is shown in Figure 2, provides a kind of Multi-channel radiofrequency filter for electrostatic chuck in the present embodiment
100.Picture 2 shows an electrostatic chuck heating system with multiple thermals treatment zone, and the electrostatic chuck thermal treatment zone includes center,
Mesozone and marginal zone are connected to 3 by 3 filter circuits respectively can be with the power supply of independent control output AC power.Heating
Alternating current power supply can be power frequency (50hz) or direct current, as long as heater in electrostatic chuck can be heated just
Permissible.Filter circuit includes inductance L1, L2, L3 of 3 series connection, and wherein L2, L3 include an iron core, and L1 is air-core.This
Invention electrostatic chuck heater can also be the only one of which thermal treatment zone or the more than three thermal treatment zone, 3 thermals treatment zone shown in figure
Merely illustrative.The inductance connected with heater in each thermal treatment zone can also only have 2, by an air-core inductance and an iron core
Inductance forms.Series inductance passes through capacitance connection to earth point, and the radio-frequency power flowing into heater circuit is filtered.
The present invention is applied to plasma treatment appts, and plasma treatment appts include plasma generator, is connected to multiple
After radio-frequency power supply, plasma is formed to the gas dissociation in reaction chamber.Plasma generator can be the reaction of capacitively coupled
Device, applies rf electric field between upper/lower electrode, and wherein in the present invention, electrostatic chuck is located at bottom electrode, can be subject to the shadow of multiple radio frequencies
Ring.Plasma generator can also be inductive type, and the rf electric field that the coil outside reaction chamber produces passes through insulating barrier
Window enters reaction chamber, and Partial Power also can enter the bottom electrode installing pending substrate.The reaction chamber of other many radio-frequency power supplies
As ECR etc. is also suitable present configuration.
An air-core inductance being serially connected by present invention design and the inductance of a ribbon core adapt to the present invention
To be filtered from several megahertzs to the rf frequency of dozens or even hundreds of hertz.
Air-core inductance is designed to limit high-frequency radio frequency voltage, and common is all above 40Mhz, such as 40Mhz,
The radio-frequency voltage of 60Mhz, 80Mhz, 120Mhz or 160Mhz.
Iron inductance is designed to limit the radio-frequency voltage of medium and low frequency, especially less than 27Mhz, such as 27Mhz,
The radio-frequency voltage of 13.56Mhz, 2Mhz, 1Mhz or 400Khz.
Both combinations are obtained in that the radio-frequency filter of a multifrequency to filter multiple radio-frequency voltages simultaneously.The present invention filters
Ripple device is highly effective on double frequency, the semiconductor equipment of three frequencies or other multifrequency.
For effective attenuation radiofrequency signal, each radio frequency inductive is designed to there is resonant frequency more than to be filtered out
The frequency of radio-frequency voltage.For high-frequency radio frequency voltage, the impedance of a resonance circuit can be with the increasing of input radio frequency signal frequency
Plus and increase, when reaching resonance point, impedance is maximum, but resonance circuit is relative to this frequency when frequency exceedes resonance point
Signal starts to show capacitive, so impedance starts zooming out again again.The resonant circuit parameters choosing of the inductance of the present invention and electric capacity composition
Select and make the resonant frequency that resonance circuit has higher than needing the radio-frequency power filtering.So make in the work of plasma reaction chamber
In group of frequencies Chengdu of any input be in the higher region of impedance.Radio-frequency power supply enter plasma reaction chamber after out itself
Outside the frequency of radio-frequency power supply input, also can produce the harmonic wave of a lot of high frequencies, the fundamental wave of such as 2Mhz in various impedances and reflection
Such as 4Mhz can be produced, the harmonic wave of 8Mhz etc..The part of so these harmonic waves also can be had the wave filter of upper resonance frequency to
Filter out.The present invention is that can selecting of 60Mhz has in the selection of trap resonant frequency to radiofrequency signal to be filtered
There is the circuit that the resonant frequency inductance more than 70Mhz, impedance are more than 1 kilohm.The correspondence signal for 13.56Mhz to be filtered
Can from more than or equal to 20Mhz, impedance be more than 1.1 kilohms resonant frequency circuit.For to be filtered for 2Mhz's
Radiofrequency signal can be selected has the resonance circuit being more than 1.4 kilohms more than 5Mhz resonant frequency, impedance.
Filter circuit experimental result using present configuration：
When low-frequency range power is 2000W, attenuation amplitude is more than 20 decibels (2.26KV input voltage, 21V output voltage)；Ferrum
Core temperature 34.5-43.3 DEG C, test in 30 minutes
When high band power is 1000W, attenuation amplitude is more than 17 decibels (200V input voltage, 4V output voltage)；
In sum, the Multi-channel radiofrequency filter for electrostatic chuck of the present invention, by air-core inductance and iron core
The resonance circuit that inductor combination is formed can not only be suitable for the very big radio system of frequency phase-difference, and it is low to have small volume cost
Advantage.Due to the employing of iron core, make inductance value be easy for being improved, there is higher adaptability, cope with different frequencies
The radio system of rate.The present invention can be not only used for the heating current limliting filtering of electrostatic chuck it is also possible to be used for plasma reaction chamber
In any need to multifrequency occasion on a large scale.The hvdc transmission line of electrostatic is provided such as in electrostatic chuck, or uses
Carry out some probes that the reaction intracavity signal of telecommunication is detected it is also desirable to filter the very big radiofrequency signal of some big frequency differences,
These occasions or part can be realized the high-efficient filter of wide range of frequencies is removed using the present invention.As long as so being located in reacting
The conductor of intracavity can be coupled with multiple rf frequencies, and this conductor is connected with external drive circuit that to need to filter these high
Frequency interference, present configuration can be adopted.
Although present disclosure has been made to be discussed in detail by above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read the above, for the present invention's
Multiple modifications and substitutions all will be apparent from.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (10)
1. a kind of radio-frequency filter for electrostatic chuck, described electrostatic chuck is arranged in plasma treatment appts and is used for
Fixing pending substrate, the radio-frequency power supply that described plasma treatment appts include having multiple rf frequencies is connected to plasma and sends out
Generating apparatus,
Described electrostatic chuck includes a heating electrode, and a radio-frequency filter is connected to described electrostatic chuck heating electrode and
Between individual heating power supply,
It is characterized in that, described radio-frequency filter comprises an iron inductance and an air inductor and a filter capacitor,
It is electrically connected to the power input of described heating power supply, described filter capacitor after described air inductor and the series connection of described iron inductance
It is connected between described power input and earth point；
The described voltage of radio-frequency power supply one the first rf frequency of output with multiple rf frequencies and a second radio frequency frequency
The voltage of rate, described first rf frequency is higher than 40Mhz, and described second rf frequency is less than 27Mhz, and described air inductor is used for
Filter the first rf frequency therein, described iron inductance is used for filtering the second rf frequency.
2. it is used for the radio-frequency filter of electrostatic chuck as claimed in claim 1 it is characterised in that being provided with described electrostatic chuck
The different region of some heating element heater correspondences, described some heating element heaters are electrically connected to heating power supply by multiple wave filter.
3. it is used for the radio-frequency filter of electrostatic chuck as claimed in claim 1 it is characterised in that described heating power supply input is defeated
Enter the heating voltage of power frequency or direct current.
4. it is used for as claimed in claim 1 the radio-frequency filter of electrostatic chuck it is characterised in that air inductor in described wave filter
The resonance circuit being formed with filter capacitor, is had the first resonant frequency and is more than described first rf frequency；
The resonance circuit that in described wave filter, iron inductance is formed with filter capacitor, has the second resonant frequency and is more than described second
Rf frequency and be less than described first rf frequency.
5. it is used for the radio-frequency filter of electrostatic chuck as claimed in claim 4 it is characterised in that described first resonant frequency is more than
Described first rf frequency 15%.
6. it is used for the radio-frequency filter of electrostatic chuck as claimed in claim 4 it is characterised in that described second resonant frequency is more than
Described second rf frequency 50%.
7. it is used for the radio-frequency filter of electrostatic chuck as claimed in claim 1 it is characterised in that described first rf frequency is more than
40Mhz, the second rf frequency is less than 20Mhz.
8. it is used for as claimed in claim 1 the radio-frequency filter of electrostatic chuck it is characterised in that described iron inductance is in input the
There is during two rf frequencies the impedance more than 1 kilohm.
9. a kind of radio-frequency filter for plasma treatment appts, described plasma treatment appts include a reaction chamber, and one
The individual radio-frequency power supply with multiple rf frequencies is connected to plasma generator, the described radio frequency electrical with multiple rf frequencies
The source output voltage of one the first rf frequency and the voltage of second rf frequency, the wherein first rf frequency is more than
40Mhz, the second rf frequency is less than 20Mhz；
One electrode is located at reaction intracavity and is coupled with the plurality of rf frequency, and described electrode has external drive circuit to join
Logical；
One wave filter is connected between described electrode and drive circuit；
It is characterized in that, described wave filter comprises an iron inductance and an air inductor and a filter capacitor, described
It is electrically connected to the power input of described drive circuit, described filter capacitor connects after air inductor and the series connection of described iron inductance
Between described power input and earth point；Described air inductor is used for filtering the first rf frequency therein, described iron core
Inductance is used for filtering the second rf frequency.
10. it is used for the radio-frequency filter of plasma treatment appts according to claim 9, described wave filter includes two series connection
Iron inductance and an air inductor.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110448621.2A CN103187943B (en) | 2011-12-28 | 2011-12-28 | Radio-frequency filter for electrostatic chuck |
| TW101143728A TW201342508A (en) | 2011-12-28 | 2012-11-22 | Radio frequency filter for electrostatic chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110448621.2A CN103187943B (en) | 2011-12-28 | 2011-12-28 | Radio-frequency filter for electrostatic chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103187943A CN103187943A (en) | 2013-07-03 |
| CN103187943B true CN103187943B (en) | 2017-02-08 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110448621.2A Active CN103187943B (en) | 2011-12-28 | 2011-12-28 | Radio-frequency filter for electrostatic chuck |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103187943B (en) |
| TW (1) | TW201342508A (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104637838B (en) * | 2013-11-15 | 2018-06-26 | 中微半导体设备(上海)有限公司 | A kind of semiconductor processing device |
| CN104733363B (en) * | 2013-12-19 | 2017-07-14 | 中微半导体设备(上海)有限公司 | A kind of radio frequency filter circuit and electrostatic chuck |
| CN104753486B (en) * | 2013-12-31 | 2019-02-19 | 北京北方华创微电子装备有限公司 | A kind of radio-frequency filter and semiconductor processing equipment |
| US9312832B2 (en) * | 2014-07-23 | 2016-04-12 | Lam Research Corporation | High power filter with single adjust for multiple channels |
| CN105592674B (en) * | 2014-10-21 | 2018-08-28 | 深圳振华富电子有限公司 | Emi filter |
| US10044338B2 (en) * | 2015-10-15 | 2018-08-07 | Lam Research Corporation | Mutually induced filters |
| US11837446B2 (en) | 2017-07-31 | 2023-12-05 | Lam Research Corporation | High power cable for heated components in RF environment |
| CN111211029B (en) | 2018-11-21 | 2023-09-01 | 中微半导体设备(上海)股份有限公司 | Multi-zone temperature-control plasma reactor |
| CN111276381A (en) * | 2018-12-04 | 2020-06-12 | 江苏鲁汶仪器有限公司 | Device and method for adjusting wafer etching uniformity |
| CN111385915B (en) * | 2018-12-27 | 2022-04-26 | 中微半导体设备(上海)股份有限公司 | Plasma reactor and heating device thereof |
| CN111383894B (en) * | 2018-12-29 | 2022-12-30 | 中微半导体设备(上海)股份有限公司 | Plasma processor and electrostatic chuck heating method |
| US10985724B1 (en) * | 2020-06-10 | 2021-04-20 | Apple Inc. | Transformer-based wideband filter with ripple reduction |
| CN114975219A (en) * | 2022-05-24 | 2022-08-30 | 北京北方华创微电子装备有限公司 | Electrostatic chucks and semiconductor process equipment |
| CN118971824A (en) * | 2023-05-15 | 2024-11-15 | 江苏鲁汶仪器股份有限公司 | A radio frequency filtering device and a radio frequency connecting device |
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| TW200405443A (en) * | 2002-06-18 | 2004-04-01 | Anelva Corp | Electrostatic absorbing apparatus |
| CN1581445A (en) * | 2003-08-01 | 2005-02-16 | 东京毅力科创株式会社 | Plasma etching method and plasma treatment apparatus |
| CN101090259A (en) * | 2006-06-13 | 2007-12-19 | 应用材料股份有限公司 | High AC Current, High RF Power AC-RF Decoupling Filter for Heating Electrostatic Chucks in Plasma Reactors |
| CN101437354A (en) * | 2007-11-14 | 2009-05-20 | 东京毅力科创株式会社 | Plasma processing apparatus |
| CN101872733A (en) * | 2009-04-24 | 2010-10-27 | 中微半导体设备(上海)有限公司 | System and method for sensing and removing residual charge of processed semiconductor process piece |
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2011
- 2011-12-28 CN CN201110448621.2A patent/CN103187943B/en active Active
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2012
- 2012-11-22 TW TW101143728A patent/TW201342508A/en unknown
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200405443A (en) * | 2002-06-18 | 2004-04-01 | Anelva Corp | Electrostatic absorbing apparatus |
| CN1581445A (en) * | 2003-08-01 | 2005-02-16 | 东京毅力科创株式会社 | Plasma etching method and plasma treatment apparatus |
| CN101090259A (en) * | 2006-06-13 | 2007-12-19 | 应用材料股份有限公司 | High AC Current, High RF Power AC-RF Decoupling Filter for Heating Electrostatic Chucks in Plasma Reactors |
| CN101437354A (en) * | 2007-11-14 | 2009-05-20 | 东京毅力科创株式会社 | Plasma processing apparatus |
| CN101872733A (en) * | 2009-04-24 | 2010-10-27 | 中微半导体设备(上海)有限公司 | System and method for sensing and removing residual charge of processed semiconductor process piece |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI484579B (en) | 2015-05-11 |
| TW201342508A (en) | 2013-10-16 |
| CN103187943A (en) | 2013-07-03 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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