CN103296161B - A kind of GaN base LED superlattice buffer layer structure and preparation method thereof - Google Patents
A kind of GaN base LED superlattice buffer layer structure and preparation method thereof Download PDFInfo
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- CN103296161B CN103296161B CN201210051922.6A CN201210051922A CN103296161B CN 103296161 B CN103296161 B CN 103296161B CN 201210051922 A CN201210051922 A CN 201210051922A CN 103296161 B CN103296161 B CN 103296161B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 16
- 239000010980 sapphire Substances 0.000 claims abstract description 16
- 238000010276 construction Methods 0.000 claims description 6
- 238000003475 lamination Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 abstract description 10
- 238000000576 coating method Methods 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 abstract description 4
- 239000012467 final product Substances 0.000 abstract description 3
- 229910052733 gallium Inorganic materials 0.000 abstract description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a kind of GaN base LED superlattice buffer layer structure and preparation method thereof, by the cycle alternately prepares GaN layer and Al on a sapphire substrate
1-xga
xn layer, is formed and has the resilient coating of superlattice structure, and by Al described in the proportional control that controls Al atom and the Ga atom number passed into
1-xga
xthe change of Ga component in N layer, or by controlling epitaxial gan layers and Al
1-xga
xthe time scale of N layer controls its Thickness Ratio, to reduce the difference of extension edge wavelength and centre wavelength gradually, make extension centre wavelength and edge wavelength basically identical, thus the uniformity of extension wavelength is improved.The present invention significantly can also reduce time and the cost of follow-up chip and sorting flow process, improves final product output rate.
Description
Technical field
The present invention relates to a kind of LED epitaxial loayer and preparation method thereof, particularly relate to a kind of GaN base LED superlattice buffer layer structure and preparation method thereof.
Background technology
MOCVD is a kind of Novel air phase epitaxy growing technology grown up on the basis of vapor phase epitaxial growth (VPE).MOCVD is using hydride of the organic compound of III, II race element and V, VI race element etc. as crystal growth raw material, in pyrolysis mode at the enterprising promoting the circulation of qi phase epitaxy of substrate, grow the thin layer monocrystal material of various iii-v, II-VI group compound semiconductor and their multivariate solid solution.Crystal growth in usual MOCVD system is all logical H under normal pressure or low pressure (10-100Torr)
2cold wall quartz (stainless steel) reative cell in carry out, underlayer temperature is 500-1200 DEG C, and with filament heating graphite plate (substrate base is above graphite plate), H2 carries metallorganic to vitellarium by the fluid supply bubbling of temperature-controllable.
Utilize MOCVD device growing GaN extension, generally need that Sapphire Substrate is inserted reative cell and react.Because the lattice between sapphire and GaN exists mismatch, can produce dislocation when growing affects crystalline quality.In order to reduce the impact of these dislocations as far as possible, when growing high-purity GaN monocrystalline, general needs first grows one deck GaN resilient coating, regrowth GaN monocrystalline on sapphire.The composition of resilient coating and the crystalline quality of growth conditions to GaN crystal have vital effect.
Current MOCVD board growing large-size epitaxial wafer, when especially using graph substrate, the stress produced due to the lattice mismatch between substrate and extension and thermal deformation difference can make epitaxial wafer generation warping phenomenon, warpage make when grown quantum trap epitaxial wafer center than edge closer to or the surface of adjacent graphite plate Pocket, thus make central portion temp higher than marginal portion, finally cause the emission wavelength of epitaxial wafer core shorter than marginal portion.Because large-size epitaxial wafer area is larger, the wavelength difference of extension core and marginal portion will be aggravated, this will to make follow-up chip and sorting work causes the significantly increase of time and cost, also will the wavelength yields of epitaxial wafer be caused significantly to decline simultaneously.
The resilient coating of extension is the articulamentum be between Sapphire Substrate and GaN epitaxy, and its component and growth conditions will have an impact to the lattice mismatch between substrate and extension, changes the stress distribution of epitaxial wafer thus the warpage degree in change growth course.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of GaN base LED superlattice buffer layer structure and preparation method thereof, Al atom is mixed by utilizing superlattice structure in GaN resilient coating, and optimize the component ratio of Al/Ga, realization improves epitaxial wafer wavelength uniformity, to solve the problem that the stress produced due to the lattice mismatch between substrate and extension and thermal deformation difference in prior art can make epitaxial wafer generation warping phenomenon.
For achieving the above object and other relevant objects, the invention provides a kind of GaN base LED superlattice buffer layer structure, described superlattice buffer layer structure is by multiple GaN layer and multiple Al
1-xga
xthe stepped construction that N layer is mutually alternately laminated, wherein, 0.01≤x≤1, and each this Al
1-xga
xin N layer, Ga component x increases progressively with the increase of stacked number.
In GaN base LED superlattice buffer layer structure of the present invention, described alternately laminated number is 2 ~ 30.
In GaN base LED superlattice buffer layer structure of the present invention, along with the increase of stacked number, described Al
1-xga
xthe Thickness Ratio of N layer and described GaN layer increases progressively.Preferably, same stacked described Al
1-xga
xthe Thickness Ratio of N layer and described GaN layer is 0.1: 1 ~ 20: 1.
The present invention also provides a kind of preparation method of GaN base LED superlattice buffer layer structure, and described preparation method at least comprises: provide Sapphire Substrate, and is formed in described Sapphire Substrate by multiple GaN layer and multiple Al
1-xga
xthe stepped construction that N layer is mutually alternately laminated, wherein, 0.01≤x≤1, and each this Al
1-xga
xin N layer, Ga component x increases progressively with the increase of stacked number.
In the preparation method of GaN base LED superlattice buffer layer structure of the present invention, described alternately laminated number is 2 ~ 30.
In the preparation method of GaN base LED superlattice buffer layer structure of the present invention, control described Al by the ratio controlling Al atomicity and the Ga atomicity passed into
1-xga
xthe value of x in N layer.
In the preparation method of GaN base LED superlattice buffer layer structure of the present invention, along with the increase of stacked number, described Al
1-xga
xthe growth time ratio of N layer and described GaN layer increases progressively.Preferably, the described Al of same lamination
1-xga
xthe growth time ratio of N layer and described GaN layer is 0.1: 1 ~ 20: 1.
As mentioned above, a kind of GaN base LED superlattice buffer layer structure of the present invention and preparation method thereof, has following beneficial effect: by the cycle alternately prepares GaN layer and Al on a sapphire substrate
1-xga
xn layer, is formed and has the resilient coating of superlattice structure, and by Al described in the proportional control that controls Al atom and the Ga atom number passed into
1-xga
xthe change of Ga component in N layer, or by controlling epitaxial gan layers and Al
1-xga
xthe time scale of N layer controls its Thickness Ratio, to reduce the difference of extension edge wavelength and centre wavelength gradually, make extension centre wavelength and edge wavelength basically identical, thus the uniformity of extension wavelength is improved.The present invention significantly can also reduce time and the cost of follow-up chip and sorting flow process, improves final product output rate.
Accompanying drawing explanation
Fig. 1 ~ 3 are shown as the structural representation that GaN base LED superlattice buffer layer structure of the present invention and preparation method thereof each step presents more.
Element numbers explanation
11 Sapphire Substrate
12 superlattice buffer layer structure
121 first GaN layer
122 the one Al
1-x1ga
x1n layer
123 second GaN layer
124 the 2nd Al
1-x2ga
x2n layer
127 n-th GaN layer
128 n-th Al
1-xnga
xnn layer
122 ' Al
0.8ga
0.2n layer
124 ' Al
0.6ga
0.4n layer
126 ' Al
0.4ga
0.6n layer
128 ' Al
0.2ga
0.8n layer
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 1 to Fig. 3.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
As shown in figures 2-3, the invention provides a kind of GaN base LED superlattice buffer layer structure, described superlattice buffer layer structure 12 is by multiple GaN layer and multiple Al
1-xga
xthe stepped construction that N layer is mutually alternately laminated, wherein, 0.01≤x≤1, and each this Al
1-xga
xin N layer, Ga component x increases progressively with the increase of stacked number.Wherein, described alternately laminated stacked number is 2 ~ 30.Along with the increase of stacked number, described Al
1-xga
xthe Thickness Ratio of N layer and described GaN layer increases progressively.Preferably, same stacked described Al
1-xga
xthe Thickness Ratio of N layer and described GaN layer is 0.1: 1 ~ 20: 1.
In the present embodiment, as shown in Figure 2, described superlattice buffer layer structure 12 is for having Al
1-xga
xthe superlattice buffer layer structure of N/GaN superlattice structure, comprises the first GaN layer 121, is incorporated into an Al on described first GaN layer 121 surface
1-x1ga
x1n layer 122, be incorporated into a described Al
1-x1ga
x1second GaN layer 123 on N layer 122 surface, be incorporated into the 2nd Al on described second GaN layer 123 surface
1-x2ga
x2n layer 124 ..., the n-th GaN layer 127 and be incorporated into n-th Al on described n-th GaN layer 127 surface
1-xnGa
xnn layer 128, wherein, x1 < x2 < ... < xn, 2≤n≤30.
Particularly, as shown in Figure 3, described resilient coating comprises: thickness is first GaN layer 121 ' of 10nm, thickness is the Al of 5nm
0.8ga
0.2n layer 122 ', thickness are second GaN layer 123 ' of 10nm, thickness is the Al of 10nm
0.6ga
0.4n layer 124 ', thickness are the 3rd GaN layer 125 ' of 10nm, thickness is the Al of 15nm
0.4ga
0.6n layer 126 ', thickness are the 4th GaN layer 127 ' of 10nm and thickness is the Al of 20nm
0.2ga
0.8n layer 128 ', to form Al
1-xga
xn/GaN superlattice structure 12 '.Certainly, the present invention is not limited to this, and in other embodiments, described has Al
1-xga
xthe resilient coating of N/GaN superlattice structure can have different stacked numbers, different component ratios and different thickness proportion.
Refer to Fig. 1 ~ Fig. 3, as shown in the figure, the present invention also provides a kind of preparation method of GaN base LED superlattice buffer layer structure, and described preparation method at least comprises: provide Sapphire Substrate, and is formed in described Sapphire Substrate by multiple GaN layer and multiple Al
1-xga
xthe stepped construction that N layer is mutually alternately laminated, wherein, 0.01≤x≤1, and each this Al
1-xga
xin N layer, Ga component x increases progressively with the increase of stacked number.Wherein, described alternately laminated number is 2 ~ 30.In the present embodiment, the ratio by controlling Al atomicity and the Ga atomicity passed into controls described Al
1-xga
xthe value of x in N layer.Along with the increase of stacked number, described Al
1-xga
xthe growth time ratio of N layer and described GaN layer increases progressively.Preferably, the described Al of same lamination
1-xga
xthe growth time ratio of N layer and described GaN layer is 0.1: 1 ~ 20: 1.
Refer to Fig. 1 ~ 3, as shown in the figure, in the present embodiment, provide a Sapphire Substrate 11, first select TMGa (trimethyl gallium) for Ga source, NH
3(ammonia) adopts metal organic chemical compound vapor deposition method to grow the first GaN layer 121 for N source in described Sapphire Substrate 11, then selects TMGa (trimethyl gallium) for Ga source, NH
3(ammonia) is N source, TMAl (trimethyl aluminium) as Al source, described first GaN layer 121 adopts metal organic chemical compound vapor deposition method grow an Al
1-x1Ga
x1n layer 122, as shown in Figure 1; Then identical means are adopted to grow the second GaN layer 123, the 2nd Al successively
1-x2ga
x2n layer 124 ... n-th GaN layer 127 and the n-th Al
1-xnga
xnn layer 128, wherein, x1 < x2 < ... < xn, as shown in Figure 2.Wherein, 2≤n≤30, described Al
1-xga
xin N layer, the value of x is controlled by the ratio controlling Al atomicity and the Ga atomicity passed into, described GaN layer and described Al
1-xga
xthe thickness of N layer is then controlled by growth time.
In concrete implementation process, as shown in Figure 3, growth thickness is first GaN layer 121 ' of 10nm successively, thickness is the Al of 5nm to adopt metal organic chemical compound vapor deposition method
0.8ga
0.2n layer 122 ', thickness are second GaN layer 123 ' of 10nm, thickness is the Al of 10nm
0.6ga
0.4n layer 124 ', thickness are the 3rd GaN layer 125 ' of 10nm, thickness is the Al of 15nm
0.4ga
0.6n layer 126 ', thickness are the 4th GaN layer 127 ' of 10nm and thickness is the Al of 20nm
0.2ga
0.8n layer 128 ', to form Al
1-xga
xn/GaN superlattice structure 12 '.Certainly, the present invention is not limited to this, and in other embodiments, described has Al
1-xga
xthe resilient coating of N/GaN superlattice structure can have different stacked numbers, different component ratios and different thickness proportion.
In sum, a kind of GaN base LED superlattice buffer layer structure of the present invention and preparation method thereof, by the cycle alternately prepares GaN layer and Al on a sapphire substrate
1-xga
xn layer, is formed and has the resilient coating of superlattice structure, and by Al described in the proportional control that controls Al atom and the Ga atom number passed into
1-xga
xthe change of Ga component in N layer, or by controlling epitaxial gan layers and Al
1-xga
xthe time scale of N layer controls its Thickness Ratio, to reduce the difference of extension edge wavelength and centre wavelength gradually, make extension centre wavelength and edge wavelength basically identical, thus the uniformity of extension wavelength is improved.The present invention significantly can also reduce time and the cost of follow-up chip and sorting flow process, improves final product output rate.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (7)
1. a GaN base LED superlattice buffer layer structure, is characterized in that, described superlattice buffer layer structure is by multiple GaN layer and multiple Al
1-xga
xthe stepped construction that N layer is mutually alternately laminated, wherein, 0.01≤x≤1, and each this Al
1-xga
xin N layer, Ga component x increases progressively with the increase of stacked number, along with the increase of stacked number, and described Al
1-xga
xthe Thickness Ratio of N layer and described GaN layer increases progressively.
2. GaN base LED superlattice buffer layer structure according to claim 1, is characterized in that: described alternately laminated number is 2 ~ 30.
3. GaN base LED superlattice buffer layer structure according to claim 1, is characterized in that: same stacked described Al
1-xga
xthe Thickness Ratio of N layer and described GaN layer is 0.1:1 ~ 20:1.
4. a preparation method for GaN base LED superlattice buffer layer structure, is characterized in that, described preparation method at least comprises: provide Sapphire Substrate, and is formed in described Sapphire Substrate by multiple GaN layer and multiple Al
1-xga
xthe stepped construction that N layer is mutually alternately laminated, wherein, 0.01≤x≤1, and each this Al
1-xga
xin N layer, Ga component x increases progressively with the increase of stacked number, along with the increase of stacked number, and described Al
1-xga
xthe growth time ratio of N layer and described GaN layer increases progressively.
5. the preparation method of GaN base LED superlattice buffer layer structure according to claim 4, is characterized in that, described alternately laminated number is 2 ~ 30.
6. the preparation method of GaN base LED superlattice buffer layer structure according to claim 4, is characterized in that, controls described Al by the ratio controlling Al atomicity and the Ga atomicity passed into
1-xga
xthe value of x in N layer.
7. the preparation method of GaN base LED superlattice buffer layer structure according to claim 4, is characterized in that, the described Al of same lamination
1-xga
xthe growth time ratio of N layer and described GaN layer is 0.1:1 ~ 20:1.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11581269B2 (en) | 2019-10-17 | 2023-02-14 | Samsung Electronics Co., Ltd. | Semiconductor thin film structures and electronic devices including the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103806104A (en) * | 2014-02-19 | 2014-05-21 | 中国科学院半导体研究所 | Method for preparing AlGaN film with high content of Al |
| CN103904177B (en) * | 2014-02-28 | 2018-01-12 | 华灿光电(苏州）有限公司 | LED epitaxial slice and its manufacture method |
| CN104201257B (en) * | 2014-09-17 | 2017-01-18 | 湘能华磊光电股份有限公司 | Method for regulating and controlling LED epitaxial wafer wavelength uniformity through buffer layer |
| CN106098882B (en) * | 2016-07-25 | 2020-08-18 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
| KR20200018418A (en) | 2017-04-24 | 2020-02-19 | 엔크리스 세미컨덕터, 아이엔씨. | Semiconductor Structures, and Methods of Manufacturing Semiconductor Structures |
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