CN103337466B - The guard ring of prevention test structure short circuit and manufacture method thereof and packaging and testing method - Google Patents
The guard ring of prevention test structure short circuit and manufacture method thereof and packaging and testing method Download PDFInfo
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- CN103337466B CN103337466B CN201310258225.2A CN201310258225A CN103337466B CN 103337466 B CN103337466 B CN 103337466B CN 201310258225 A CN201310258225 A CN 201310258225A CN 103337466 B CN103337466 B CN 103337466B
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- 238000012360 testing method Methods 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 12
- 230000002265 prevention Effects 0.000 title claims description 26
- 239000002184 metal Substances 0.000 claims abstract description 130
- 238000002955 isolation Methods 0.000 claims abstract description 21
- 230000008569 process Effects 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 26
- 239000000919 ceramic Substances 0.000 claims description 19
- 238000005538 encapsulation Methods 0.000 abstract description 7
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 238000006731 degradation reaction Methods 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 description 12
- 238000000576 coating method Methods 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 230000004048 modification Effects 0.000 description 3
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- 238000005516 engineering process Methods 0.000 description 2
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Abstract
The present invention propose a kind of prevent test structure short circuit guard ring and manufacture method and packaging and testing method, guard ring has an isolation structure, isolation structure comprises multiple identical interconnection layer successively connected successively from the bottom to top, have metal band-shaped encirclement structure in each interconnection layer, metal band-shaped encirclement structure is that fluting, filling metal are formed in a low K dielectric layer; Three layers of upper dielectric layer, are formed on isolation structure, and have window in three layers of upper dielectric layer; And multiple metal gasket; be formed in the low K dielectric layer that metal band-shaped encirclement structure surrounds; and metal gasket described in each window correspondence one; enter to prevent test structure aqueous vapor in section encapsulation or other operating process; cause the problem of test structure degradation; and avoid because metal gasket is too little or operate miss makes metal connecting line ball portion get to outside metal gasket, cause metal connecting line ball to contact with guard ring and the problem of the test structure short circuit caused.
Description
Technical field
The invention belongs to technical field of semiconductor chip encapsulation, particularly relate to a kind of prevent test structure short circuit guard ring and manufacture method and packaging and testing method.
Background technology
When test structure needs to carry out package level test, test structure can play metal connecting line ball on corresponding test structure metal gasket, then on metal connecting line ball, break metal wire is connected on base of ceramic pin, as shown in Fig. 1 base of ceramic structure, being 1. test structure put area, is 2. base of ceramic pin, Fig. 2 is test structure enlarged drawing after encapsulation, 3. being metal gasket, is 4. metal wire, is 5. metal connecting line ball.Need to carry out under the environment of water during wafer cutting, the dielectric layer (inorganic compound) that water can be formed by the low-K material of test structure side spreads everywhere to test structure, owing to there being the metal throuth hole in order to conduction under metal gasket, if the metal throuth hole that diffusion of moisture is connected to test structure also enters test structure along metal throuth hole, just may have an impact to the performance of test structure.
Therefore, for some structure on wafer, such as test structure, in order to prevent having aqueous vapor to enter in section encapsulation or other operating process, a metal coating ring can be made 6. in the periphery of test structure, be illustrated in figure 3 the existing test structure vertical view with metal coating ring, Fig. 4 is the sectional view of metal coating ring, described metal coating ring successively links time the superiors' interconnection layer 64 from bottom interconnection layer 61, the superiors' interconnection layer 66, and on the superiors' interconnection layer, form a top dielectric layer 67, described metal coating ring adds becket and surrounds structure in every layer of interconnection layer, and (62 is underlying metal through hole to add a lot of metal throuth hole via between every two-layer interconnection layer, 63 is time the superiors' metal throuth hole, 65 is the superiors' metal throuth hole), when wafer being cut in water, such aqueous vapor is diffused in the process of structure by low K dielectric layer 68, the stop that the becket different from the dielectric layer that low-K material is formed surrounds structure or densely covered metal throuth hole will be run into, reduce the diffusivity of aqueous vapor, thus make aqueous vapor be difficult to enter test structure, realize the protection to test structure.
Metal connecting line ball on metal gasket is broken metal wire when being connected on base of ceramic pin, size due to metal gasket or routing error too small relative to metal connecting line ball, and the distance of metal coating ring and metal gasket is limited, and the top dielectric layer that the superiors' interconnection layer of metal coating ring is formed is one deck, metal connecting line ball portion is easily made to get to outside metal gasket, the superiors' interconnection layer that metal connecting line ball easily gets to metal coating ring will be there is 7. go up, therefore the hidden danger of test structure short circuit can be caused, as shown in Figure 5, Fig. 6 is close-up top view, 8. be the connecting line between test structure and metal gasket.
For this reason; be badly in need of providing a kind of new guard ring; in order to avoid the thin metal connecting line ball portion that makes of the thickness of or operate miss or top dielectric layer too little due to metal gasket to reach metal gasket, metal connecting line ball is caused to contact with guard ring and the problem of the test structure short circuit caused.
Summary of the invention
The object of this invention is to provide a kind of prevent test structure short circuit guard ring and manufacture method and packaging and testing method; to avoid because test structure metal gasket is too little or operate miss makes metal connecting line ball portion get to outside test structure metal gasket, metal connecting line ball is caused to contact with guard ring and the problem of the test structure short circuit caused.
For solving the problem, the invention provides a kind of guard ring preventing test structure short circuit, described guard ring comprises:
One isolation structure, described isolation structure comprises multiple identical interconnection layer successively connected successively from the bottom to top, has metal band-shaped encirclement structure in interconnection layer described in each, and described metal band-shaped encirclement structure is that fluting, filling metal are formed in a low K dielectric layer;
Three layers of upper dielectric layer, are formed on described isolation structure, and have window in described three layers of upper dielectric layer; And
Multiple metal gasket, is formed in the low K dielectric layer that described metal band-shaped encirclement structure surrounds, and metal gasket described in each described window correspondence one.
Further, the material of every layer of described upper dielectric layer use is not identical with the material that low K dielectric layer uses.
Further, the material of every layer of described upper dielectric layer use is Si oxide, and dielectric constant is 4 ~ 4.2.
In order to reach another object of the present invention, a kind of manufacture method of preventing the guard ring of test structure short circuit being also provided, comprising the steps:
Step 1: form a low K dielectric layer, slots, fills the interconnection layer that metal is formed with a metal band-shaped encirclement structure in described low K dielectric layer;
Step 2: repeat step 1, form multiple described interconnection layer successively connected successively from the bottom to top, thus form an isolation structure, and in the process forming described isolation structure, in the low K dielectric layer that described metal band-shaped encirclement structure is surrounded, form multiple metal gasket;
Step 3: form dielectric layer on three layers on described isolation structure, and on described three layers windowing in dielectric layer, make metal gasket described in each described window correspondence one.
Further, the material of every layer of described upper dielectric layer use is not identical with the material that low K dielectric layer uses.
Further, the material of every layer of described upper dielectric layer use is Si oxide, and dielectric constant is 4 ~ 4.2.
In order to reach another object of the present invention, a kind of packaging and testing method of preventing test structure short circuit being also provided, comprising the steps:
Wafer is formed the guard ring of described prevention test structure short circuit;
Wafer is cut, to obtain the guard ring of described prevention test structure short circuit;
There is provided a base of ceramic, described base of ceramic has put area and base of ceramic pin, and the guard ring of described prevention test structure short circuit is positioned on put area;
Metal gasket in the guard ring of described prevention test structure short circuit plays metal connecting line ball;
Metal wire broken by described metal connecting line ball be connected on base of ceramic pin.
Further, the material of every layer of described upper dielectric layer use is not identical with the material that low K dielectric layer uses.
Further, the material of every layer of described upper dielectric layer use is Si oxide, and dielectric constant is 4 ~ 4.2.
From above technical scheme, a kind of guard ring and manufacture method of preventing test structure short circuit disclosed by the invention, described guard ring comprises: an isolation structure, described isolation structure comprises multiple identical interconnection layer successively connected successively from the bottom to top, have metal band-shaped encirclement structure in interconnection layer described in each, described metal band-shaped encirclement structure is that fluting, filling metal are formed in a low K dielectric layer; Three layers of upper dielectric layer, are formed on described isolation structure, and have window in described three layers of upper dielectric layer; And multiple metal gasket; be formed in the low K dielectric layer that described metal band-shaped encirclement structure surrounds; and metal gasket described in each described window correspondence one; the guard ring of this structure all has metal band-shaped encirclement structure due in the interconnection layer that successively connects; and the top layer of the interconnection layer successively connected has three layers of enough thick upper dielectric layer, can prevent test structure aqueous vapor in section encapsulation or other operating process from entering.
In addition, a kind of packaging and testing method of preventing test structure short circuit disclosed by the invention, the guard ring of the present invention obtained after cutting in water by wafer is placed in the put area of base of ceramic, after metal gasket in guard ring being played metal connecting line ball, because described guard ring can prevent aqueous vapor from entering test structure in section encapsulation or other operating process, be therefore not easy the degradation causing test structure, simultaneously, metal connecting line ball is stamped to the metal gasket in guard ring by the window in layer upper dielectric layer of three in guard ring of the present invention, even if metal gasket is too little or operate miss makes metal connecting line ball portion get to outside test structure metal gasket, because the superiors' interconnection layer in described guard ring is of the prior art the superiors' interconnection layer, and descend two layer medium layer most in described guard ring three layers upper dielectric layer, instead of the superiors of the prior art metal throuth hole and the superiors' interconnection layer respectively, make the distance of three layers of upper dielectric layer of the present invention and the superiors' interconnection layer under it, far away many compared with the distance of the superiors' interconnection layer under it with a top dielectric layer of the prior art, therefore be not easy to cause metal connecting line ball to contact with guard ring of the present invention and the problem of the test structure short circuit caused.
Accompanying drawing explanation
Fig. 1 is the structural representation of the base of ceramic in an embodiment of prior art;
Fig. 2 is test structure enlarged drawing after the encapsulation in an embodiment of prior art;
Fig. 3 is the vertical view with the test structure of metal coating ring in an embodiment of prior art;
Fig. 4 is the sectional view of the metal coating ring in Fig. 3;
Fig. 5 is the vertical view that metal connecting line ball in Fig. 3 touches metal coating ring;
Fig. 6 is the close-up top view of Fig. 5;
Fig. 7 is the schematic flow sheet of the manufacture method of the guard ring of prevention test structure short circuit in the embodiment of the present invention one;
Fig. 8 is the schematic cross-section of the guard ring of prevention test structure short circuit in the embodiment of the present invention one;
Fig. 9 is the schematic flow sheet of the packaging and testing method of prevention test structure short circuit in the embodiment of the present invention two;
Figure 10 is the close-up top view that metal connecting line ball in the embodiment of the present invention two touches metal coating ring.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Set forth a lot of detail in the following description so that fully understand the present invention.But the present invention can be much different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention, therefore the present invention is by the restriction of following public concrete enforcement.
Embodiment one
For the schematic flow sheet shown in Fig. 7, composition graphs 8, is described in detail a kind of manufacture method of the guard ring of test structure short circuit of preventing provided by the invention.
In step 1, form a low K dielectric layer 100, slot in described low K dielectric layer, fill the interconnection layer that metal is formed with a metal band-shaped encirclement structure, the interconnection layer that first time is formed is as bottom interconnection layer 201.
In step 2, repeat step 1, then on bottom interconnection layer, form the interconnection layer as described in step 1, the interconnection layer that second time is formed is as underlying metal through hole 202; Repeat step 1 again, then on underlying metal through hole, form the interconnection layer as described in step 1, the interconnection layer that third time is formed is as secondary bottom interconnection layer; Then repeat step 1, then on secondary bottom interconnection layer, form the interconnection layer as described in step 1, the interconnection layer that third time is formed is as secondary underlying metal through hole; Therefore, constantly repeat according to above-mentioned steps, until form time the superiors' metal throuth hole 204 on Ci Ci the superiors interconnection layer 203, secondary the superiors metal throuth hole 204 is formed time the superiors' interconnection layer 205, thus forming multiple interconnection layer successively connected successively from the bottom to top, these interconnection layers successively connected constitute an isolation structure 200.
Meanwhile, in the process forming described isolation structure, according to the technological requirement of actual test structure, in the low K dielectric layer that described metal band-shaped encirclement structure is surrounded, multiple metal gasket is formed.
In step 3, dielectric layer 400 on described isolation structure forms three layers from the bottom to top successively, the material of every layer of described upper dielectric layer use is not identical with the material that low K dielectric layer uses, preferably, the material of every layer of described upper dielectric layer use is Si oxide, and dielectric constant is 4 ~ 4.2.The position of corresponding metal gasket in dielectric layer on described three layers, runs through described three layers of upper dielectric layer windowing from the bottom to top, makes metal gasket described in each described window correspondence one, thus on wafer, define a kind of guard ring 500 preventing test structure short circuit.
As can be seen here; guard ring of the present invention is compared with guard ring of the prior art; on secondary the superiors interconnection layer, do not form the superiors' metal throuth hole; and do not form the superiors' interconnection layer at the superiors' metal throuth hole; but define dielectric layer on three layers on secondary the superiors interconnection layer, and the encirclement structure of every layer of metal throuth hole layer formed also for closing.
During cutting, aqueous vapor can affect performance mainly for relatively more loose low K material.Owing to all having metal band-shaped encirclement structure in every layer of low K dielectric layer in guard ring of the present invention, metal band-shaped encirclement structure in the described interconnection layer successively connected carries out water resisting protection to its low K dielectric layer surrounded, and described separator also has three layers of enough thick upper dielectric layer, every layer of described upper dielectric layer is Si oxide, the material capability of upper dielectric layer determines aqueous vapor and is not easy to enter, therefore, when cutting under the environment of wafer at water, aqueous vapor is diffused in the process of test structure by low K dielectric layer will run into the stop that the becket different from low K dielectric layer material surrounds structure and upper dielectric layer, reduce the diffusivity of aqueous vapor, thus make aqueous vapor be difficult to enter test structure.
Embodiment two
For the schematic flow sheet shown in Fig. 9, in conjunction with Figure 10, a kind of packaging and testing method of test structure short circuit of preventing provided by the invention is described in detail.
In step 10, wafer is formed the guard ring 500 of described prevention test structure short circuit.
In step 20, wafer is carried out cut in water, obtain the guard ring of described prevention test structure short circuit.
In step 30; one base of ceramic is provided; described base of ceramic has put area and base of ceramic pin, is placed on described put area, has the test structure of protection in the guard ring of described prevention test structure short circuit by the guard ring of described prevention test structure short circuit.In the present embodiment, actual is described base of ceramic when can put down the guard ring of described prevention test structure short circuit, being the bigger the better of the guard ring cutting of described prevention test structure short circuit, the position of cutting from test structure more away from better.
In step 40, the metal gasket in the guard ring of described prevention test structure short circuit plays metal connecting line ball 600.
In step 50, metal wire broken by described metal connecting line ball to be connected on base of ceramic pin.
Because the superiors' interconnection layer 205 in described guard ring is of the prior art the superiors' interconnection layer, and three layers of the most lower two-layer upper dielectric layer gone up in dielectric layers 400 in described guard ring, instead of the superiors of the prior art metal throuth hole and the superiors' interconnection layer respectively, make the distance of three layers of upper dielectric layer of the present invention and the superiors' interconnection layer 205 under it, far away many compared with the distance of the nearest the superiors' interconnection layer under it with a top dielectric layer of the prior art, carry out the routing of connecting line 700 between the metal gasket in test structure and guard ring after, even if metal gasket is too little or operate miss makes metal connecting line ball portion get to outside metal gasket, also be not easy to cause metal connecting line ball to contact with guard ring of the present invention and the problem of the test structure short circuit caused.
In this specification, each embodiment adopts the mode of going forward one by one to describe, and what each embodiment stressed is the difference with other embodiments, between each embodiment identical similar portion mutually see.For system disclosed in embodiment, owing to corresponding to the method disclosed in Example, so description is fairly simple, relevant part illustrates see method part.
Professional can also recognize further, in conjunction with unit and the algorithm steps of each example of embodiment disclosed herein description, can realize with electronic hardware, computer software or the combination of the two, in order to the interchangeability of hardware and software is clearly described, generally describe composition and the step of each example in the above description according to function.These functions perform with hardware or software mode actually, depend on application-specific and the design constraint of technical scheme.Professional and technical personnel can use distinct methods to realize described function to each specifically should being used for, but this realization should not thought and exceeds scope of the present invention.
Obviously, those skilled in the art can carry out various change and modification to invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (9)
1. prevent a guard ring for test structure short circuit, it is characterized in that, described guard ring comprises:
One isolation structure, described isolation structure comprises multiple identical interconnection layer successively connected successively from the bottom to top, has metal band-shaped encirclement structure in interconnection layer described in each, and described metal band-shaped encirclement structure is that fluting, filling metal are formed in a low K dielectric layer;
Three layers of upper dielectric layer, are formed on described isolation structure, and have window in described three layers of upper dielectric layer; And
Multiple metal gasket, is formed in the low K dielectric layer that described metal band-shaped encirclement structure surrounds, and metal gasket described in each described window correspondence one.
2. the guard ring of prevention test structure according to claim 1 short circuit, is characterized in that, the material of every layer of described upper dielectric layer use is not identical with the material that low K dielectric layer uses.
3. the guard ring of prevention test structure according to claim 2 short circuit, is characterized in that, the material of every layer of described upper dielectric layer use is Si oxide, and dielectric constant is 4 ~ 4.2.
4. prevent a manufacture method for the guard ring of test structure short circuit, it is characterized in that, comprise the steps:
Step 1: form a low K dielectric layer, slots, fills the interconnection layer that metal is formed with a metal band-shaped encirclement structure in described low K dielectric layer;
Step 2: repeat step 1, form multiple described interconnection layer successively connected successively from the bottom to top, thus form an isolation structure, and in the process forming described isolation structure, in the low K dielectric layer that described metal band-shaped encirclement structure is surrounded, form multiple metal gasket;
Step 3: form dielectric layer on three layers on described isolation structure, and on described three layers windowing in dielectric layer, make metal gasket described in each described window correspondence one.
5. the manufacture method of the guard ring of prevention test structure according to claim 4 short circuit, is characterized in that, the material of every layer of described upper dielectric layer use is not identical with the material that low K dielectric layer uses.
6. the manufacture method of the guard ring of prevention test structure according to claim 5 short circuit, is characterized in that, the material of every layer of described upper dielectric layer use is Si oxide, and dielectric constant is 4 ~ 4.2.
7. prevent a packaging and testing method for test structure short circuit, it is characterized in that, comprise the steps:
Wafer is formed the guard ring of prevention test structure as claimed in claim 1 short circuit;
Wafer is cut, to obtain the guard ring of described prevention test structure short circuit;
There is provided a base of ceramic, described base of ceramic has put area and base of ceramic pin, and the guard ring of described prevention test structure short circuit is positioned on put area;
Metal gasket in the guard ring of described prevention test structure short circuit plays metal connecting line ball;
Metal wire broken by described metal connecting line ball be connected on base of ceramic pin.
8. the packaging and testing method of prevention test structure according to claim 7 short circuit, is characterized in that, the material of every layer of described upper dielectric layer use is not identical with the material that low K dielectric layer uses.
9. the packaging and testing method of prevention test structure according to claim 8 short circuit, is characterized in that, the material of every layer of described upper dielectric layer use is Si oxide, and dielectric constant is 4 ~ 4.2.
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| CN103594454B (en) * | 2013-11-13 | 2016-06-01 | 上海华力微电子有限公司 | The guard ring structure of test structure short circuit during for preventing to encapsulate |
| CN104022105B (en) * | 2014-04-22 | 2018-12-18 | 上海华力微电子有限公司 | The protection ring and packaging and testing method of structure short circuit are tested when for preventing encapsulation |
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| CN103050424A (en) * | 2012-08-17 | 2013-04-17 | 上海华虹Nec电子有限公司 | Protecting ring for semiconductor device |
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| JP4257013B2 (en) * | 2000-03-28 | 2009-04-22 | エルピーダメモリ株式会社 | Semiconductor integrated circuit device |
| KR20040102719A (en) * | 2003-05-29 | 2004-12-08 | 주식회사 하이닉스반도체 | Semiconductor device |
| US7482675B2 (en) * | 2005-06-24 | 2009-01-27 | International Business Machines Corporation | Probing pads in kerf area for wafer testing |
| US7566915B2 (en) * | 2006-12-29 | 2009-07-28 | Intel Corporation | Guard ring extension to prevent reliability failures |
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