CN103474445B - Miniature LED integrated array device and preparation method - Google Patents

Abstract

The micro-LED integrated array device and its preparation method relate to the technical field of light-emitting display, and solve the problem that the existing planar LED micro-display devices are limited in use because they cannot be bent. The working process of the micro-flexible LED array device of the present invention is that the current is The upper electrode is injected and flows out from the lower electrode, forming an electric field in the device, so that the positive load carriers recombine and emit light in the light-emitting layer. Part of the light goes upward through the light-transmitting layer and exits from the microlens; part of the light reaches down to the reflective layer, is reflected by the reflective layer, passes through the light-emitting layer and the light-transmitting layer, and exits from the microlens. Since the luminescence principle of the light-emitting device is the recombination of carriers in the pn junction, it has the nonlinear characteristics of diode current and voltage, and the luminous brightness also has nonlinear characteristics with the magnitude of the injected current. The invention controls the brightness and darkness of the phase elements through a circuit to realize luminescent display.

Description

Micro LED integrated array device and preparation method

technical field

The invention relates to the technical field of LEDs, in particular to a micro-LED integrated array device and a preparation method.

Background technique

At present, micro-display devices have become the focus of attention of all scientific and technological powers by virtue of their unique advantages. LED microdisplays have many unique advantages, such as active light emission, ultra-high brightness, long life, low operating voltage, high luminous efficiency, fast response, stable and reliable performance, and wide operating temperature range. The traditional manufacturing method is to arrange multiple single-tube LED chips on the base, and then wire and package. Affected by the base, it is difficult to make the pixel size of the display device made by this method smaller, so the resolution is limited to a certain extent, and it does not meet the development needs of miniaturization and clarity in the future. Combining semiconductor process technology with MOEMS three-dimensional microfabrication technology, its industrial production does not require additional large investment, so it has broad industrialization prospects.

Contents of the invention

The present invention provides a micro-LED integrated chip and a manufacturing method in order to solve the problem that the pixel size of the LED is difficult to be reduced in the existing LED micro-display, which leads to the limitation of the resolution and the inability to meet the needs.

A micro-LED integrated array device, including a light-transmitting layer, a light-emitting layer, a reflective layer, a substrate, an upper electrode, an upper electrode lead, a lower electrode, a lower electrode lead, a diaphragm, a microlens, an adhesive material and a substrate, the light-transmitting Layer, luminescent layer, reflective layer, substrate and microlens form an LED light-emitting unit; the top of the reflective layer is a light-emitting layer, light-transmitting layer and microlens in turn, and the bottom of the reflective layer is a substrate; a plurality of LED light-emitting units are uniform Arranged to form an array of light-emitting units, the light-emitting units are formed by diaphragms, and the diaphragms connect each light-emitting unit in turn and realize the isolation of the light-emitting units; the upper surface of the light-transmitting layer is arranged with upper electrodes, and the upper surface of the diaphragm is arranged The upper electrode leads are arranged, and the upper electrodes in the same row are connected to the upper electrode leads in sequence. The lower electrodes are arranged on the lower surface of the substrate, and the lower electrode leads are arranged on the lower surface of the aperture. The electrodes and the lower electrode leads are connected in sequence, and the lower lead column composed of the lower electrode and the lower electrode leads and the upper lead row composed of the upper electrode and the upper electrode leads are perpendicular to each other in the direction; the substrate is fixed to the light-emitting unit through an adhesive material the lower surface of the array.

A method for preparing a micro-LED integrated array device, the method is realized by the following steps:

Step 1, the back side of the light-emitting chip is thinned,

Step 11, select a light-emitting chip, the light-emitting chip is composed of a light-transmitting layer, a light-emitting layer, a reflective layer and a substrate;

Step 12, cleaning the light-emitting chip, and then preparing a protective film on the upper surface of the light-transmitting layer of the light-emitting chip;

Step 13, using an adhesive to paste a protective sheet on the upper surface of the protective film, thinning the lower surface of the substrate of the light-emitting chip, and then performing polishing treatment;

Step 2, forming an island structure on the back of the light-emitting chip; preparing a layer of masking layer on the lower surface of the thinned light-emitting chip substrate; coating the surface of the masking layer with photoresist, and opening the masking layer through photolithography and etching processes Out of the window, the shape of the window is the same as that of the flexible area; the substrate is selectively etched to obtain an island structure on the back of the light-emitting chip;

Step 3, preparing the lower electrode and the lower electrode lead; removing the lower masking layer to prepare the lower electrode and the lower electrode lead; then, preparing a flexible material on the lower surface of the substrate;

Step 4, fixing the back of the light-emitting chip; using an adhesive to fix the lower surface of the substrate of the light-emitting chip with the back flexible material on the lower protective sheet;

Step 5, pixel segmentation of the light-emitting chip to obtain multiple LED light-emitting units;

Step 51, removing the upper protective sheet and the adhesive in step 13 to expose the protective film on the upper surface of the light-emitting chip;

Step 52: Cleaning, photoetching and corroding the protective film on the light-emitting chip described in step 51 to expose the aperture window; performing ICP etching on the upper surface of the light-emitting chip under the cover of the protective film and photoresist to completely remove The light-emitting chip material in the flexible area realizes the pixel segmentation of the light-emitting chip;

Step 6: Prepare the aperture area between the light-emitting units; coat the aperture material on the upper surface of the light-emitting chip that realizes the separation of the light-emitting units, perform pre-curing, remove the aperture material on the upper surface of the light-transmitting layer through photolithography and corrosion processes, and Form a concave shape on the upper surface of the formed flexible material by removing glue and corroding again; complete the complete curing of the diaphragm material, and remove the protective film on the upper surface of the light-transmitting layer;

Step 7, preparing the upper electrode and the upper electrode lead;

Step 8, preparing a microlens; preparing a high-adhesion polymer layer on the light-emitting chip with the upper electrode and the upper electrode lead, and obtaining a polymer microlens by a hot-melt method;

Step 9, removing the lower protective sheet and the adhesive on the lower surface of the substrate of the light-emitting chip, making circuit leads, and completing the manufacture of the LED device.

The working process of the micro-LED integrated array device of the present invention is that current is injected from the upper electrode and flows out from the lower electrode to form an electric field in the device, so that the positive load carriers recombine and emit light in the light-emitting layer. Part of the light goes upward through the light-transmitting layer and exits from the microlens; part of the light reaches down to the reflective layer, is reflected by the reflective layer, passes through the light-emitting layer and the light-transmitting layer, and exits from the microlens. Since the luminescence principle of the light-emitting device is the recombination of carriers in the p-n junction, it has the nonlinear characteristics of diode current and voltage, and the luminous brightness also has nonlinear characteristics with the magnitude of the injected current. The invention controls the brightness and darkness of the phase elements through a circuit to realize luminescent display.

Beneficial effects of the present invention: the present invention adopts the inorganic active light-emitting diode chip to prepare the flexible micro-display device, which has a simple structure, firmness, and fast response; and overcomes the problems of the short life of the organic light-emitting device and the low driving current that limit the light output intensity, thereby Provided are a self-illuminating, small-volume, low-power-consumption microdisplay device based on a high-brightness light-emitting chip and a preparation method thereof. This microdisplay device can be applied to many fields such as medical equipment and micro sensor device manufacturing.

Description of drawings

Fig. 1 is the effect drawing of micro-LED integrated array device described in the present invention;

Figure 2a and Figure 2b in Figure 2 are the main sectional view and the left sectional view of the micro LED integrated array device according to the present invention, respectively;

Fig. 3 is a distribution diagram of light emitting units using square light emitting units in the micro LED integrated array device according to the present invention.

Figures 4a to 4e in Figure 4 are schematic diagrams of five types of upper electrodes and upper electrode lead structures using square light-emitting units in the micro LED integrated array device according to the present invention;

Fig. 5a to Fig. 5d in Fig. 5 are schematic diagrams of four kinds of lower electrodes and lower electrode leads using square light-emitting units in the micro LED integrated array device according to the present invention;

6 is a distribution diagram of light emitting units using circular light emitting units in the micro LED integrated array device according to the present invention;

7a to 7d in FIG. 7 are schematic diagrams of four types of upper electrodes and upper electrode leads using circular light-emitting units of the micro-LED integrated array device according to the present invention;

8a to 8c in FIG. 8 are schematic diagrams of three types of lower electrodes and lower electrode lead wires using circular light-emitting units in the micro LED integrated array device according to the present invention.

Figures 9a to 9g in Figure 9 are front cross-sectional views of the preparation of the micro-LED integrated array device; Figures 9h to 9m are left-side cross-sectional views of the preparation of the micro-LED integrated array device, and Figures 9n and 9o are the completed pixel arrays Left and front sectional views.

detailed description

Specific Embodiments 1. This embodiment will be described in conjunction with FIGS. 1 to 8. The micro LED integrated array device includes: a light-transmitting layer 1, a light-emitting layer 2, a reflective layer 3, a substrate 4, an upper electrode 5, an upper electrode lead 9, Bottom electrode 6 , bottom electrode leads 10 , aperture 7 , microlens 8 and substrate 11 . The light-transmitting layer 1, the light-emitting layer 2, the reflective layer 3, the substrate 4 and the micro-lens 8 form an LED light-emitting unit. The upper surface of the reflective layer 3 is the luminous layer 2 , the light-transmissive layer 1 and the microlens 8 in sequence, and the lower surface of the reflective layer 3 is the substrate 4 . The LED light-emitting units are uniformly arranged to form a light-emitting unit array. A diaphragm 7 is located between the light emitting units, and the diaphragm 7 connects each light emitting unit in sequence and realizes the isolation of pixels. The upper surface of the light-transmitting layer 1 is arranged with an upper electrode 5, and the upper surface of the diaphragm 7 is arranged with an upper electrode lead 9. The lower electrode 6 is arranged on the surface, and the lower electrode lead 10 is arranged on the lower surface of the aperture 7. The lower electrodes 6 in the same column are connected with the lower electrode lead 10 in turn, and the lower electrode 6 and the lower electrode lead 10 are formed. The lead line column and the upper lead line row composed of the upper electrode 5 and the upper electrode lead 9 are perpendicular to each other in different directions. The substrate 11 is fixed on the lower surface of the light emitting unit array by an adhesive material 12 .

The LED light-emitting unit described in this embodiment has a square, rectangular, circular or other shape. The shape of the upper electrode 5 is circular, circular, single strip, double strip or other shapes. The shape of the lower electrode 6 is rectangle, circle, single strip, double strip or other shapes.

The light-transmitting layer 1 , light-emitting layer 2 , reflective layer 3 , and substrate 4 described in this embodiment are general-purpose AlGaInPLED epitaxial wafer materials produced by conventional techniques. The material of the upper electrode 5 on the light-emitting unit and the upper electrode lead 9 outside the light-emitting unit is Cr/Au or Ti/Pt/Au or Ti/Mo/Au or AuGeNi/Au or Al or Cu, or made of Cr/Au or Ti The composite film composed of /Pt/Au or Ti/Mo/Au or AuGeNi/Au and Cu or Au is prepared by thin film evaporation and photolithography etching forming process. In order to improve the reliability of the upper electrode and the upper electrode lead, or by evaporation Thick film electrodes are made by thin film coating, mask preparation by photolithography and electroforming. The material of the lower electrode 6 and the lower electrode lead 10 is Cr/AuTi/Pt/Au or Ti/Mo/Au or AuGeNi/Au or Al or Cu, or made of Cr/Au or Ti/Pt/Au or Ti/Mo/Au Or a composite film composed of AuGeNi/Au and Cu or Au, prepared by thin film evaporation and photolithography etching forming process, in order to improve the reliability of the lower electrode and the lower electrode lead, or prepare a mask and electrode Casting and other processes to make thick film electrodes. Aperture 7 Material The aperture material needs to meet the following three requirements. One is good insulation, which can better realize the electrical isolation between pixels; the other is light-tight, ensuring that there will be no crosstalk between pixels. ; The third is that there is a certain degree of adhesion, making the LED pixels link into a whole. The material of the microlens 8 is hard epoxy resin or other high transmittance materials.

Specific Embodiment 2. This embodiment is described in conjunction with FIG. 9. This embodiment is a method for preparing the micro-LED integrated array device described in Embodiment 1; this embodiment adopts a bottom-up manufacturing method, that is, the back side structure, and then protect the back structure to prepare the front structure. During the fabrication process, flexible electrodes are fabricated by filling flexible materials and photoetching special topography.

A. Thinning of the back of the light-emitting chip:

a) The matrix material used in the present invention is a light-emitting chip, and the light-emitting chip used is composed of a light-transmitting layer, a light-emitting layer, a reflective layer and a substrate, as shown in FIG. 9a.

b) Cleaning the light-emitting chip. Then prepare a protective film on the upper surface of the light-emitting chip, that is, the upper surface of the light-transmitting layer, as shown in FIG. 9b.

c) Paste a protective sheet on the upper surface of the protective film with an adhesive, as shown in FIG. 9c.

d) Thinning the lower surface of the entire light-emitting chip to a desired thickness, and then performing polishing treatment, as shown in FIG. 9d.

B. Forming the back island structure: firstly, a masking layer is prepared on the lower surface of the thinned substrate. Then, a photoresist is coated on the surface of the masking layer, and a window is opened in the masking layer through photolithography and etching processes, and the shape of the window is the same as that of the flexible area. Finally, the substrate is selectively etched to obtain an island-like structure on the lower surface, as shown in FIG. 9e.

C. Prepare the lower electrode and the lower electrode lead:

The lower masking layer is removed, and then, a thin-film lower electrode and a lower electrode lead; or a thick-film lower electrode and a lower electrode lead are prepared, as shown in FIG. 9f.

D. Fixing the back of the light-emitting chip: In order to protect the lower surface of the light-emitting chip with the prepared flexible material on the back, it is fixed on the lower protective sheet with an adhesive. Figure 9g is a front cross-sectional view of the light-emitting chip with the back fixed.

E. Pixel segmentation of light-emitting chips:

a) Remove the upper protective sheet and the adhesive to expose the protective film on the upper surface of the light-emitting chip, as shown in Figure 9h.

b) It is cleaned, photolithographically and etched into the protective film to expose the flexible area window. ICP etching is performed on the upper surface of the light-emitting chip under the cover of the protective film and photoresist to completely remove the material of the light-emitting chip in the flexible region, and realize the pixel division of the light-emitting chip, as shown in FIG. 9i.

F. Prepare the aperture area between the light emitting units:

a) Coating an aperture material on the surface of the light-emitting chip that realizes pixel separation, and performing pre-curing, as shown in FIG. 9j .

b) removing the diaphragm material on the upper surface of the light-transmitting layer through photolithography and etching processes. Complete curing of the aperture material.

c) Remove the protective film, as shown in Figure 9k.

G. Preparation of upper electrode and upper electrode lead: the upper electrode and upper electrode lead are fabricated on the upper surface of the light-emitting chip in the prepared flexible region by photolithography, evaporation and electroforming, as shown in FIG. 9l.

H. Preparation of microlens array: prepare a high-adhesive polymer layer on the light-emitting chip with the upper electrode and upper electrode leads, and obtain polymer microlenses by hot-melt method. As shown in Figure 9m.

I. Remove the protective sheet and the adhesive on the back of the light-emitting chip, and the left and front cross-sectional views of the obtained pixel array are shown in Figures 9n and 9o. Make circuit leads to complete device fabrication.

Specific Embodiment 3. This embodiment is the preparation method of the micro-LED integrated array device described in Specific Embodiment 2, which is realized by the following steps:

A. Thinning of the back of the light-emitting chip:

a) The light-emitting chip described in this embodiment is an AlGaInP-LED epitaxial wafer, which is composed of a light-transmitting layer, a light-emitting layer, a reflective layer and a substrate, and the thickness of the light-emitting chip is 200 μm to 1000 μm. The lower surface of the light-emitting chip is thinned and polished by mechanical thinning and polishing or chemical thinning and polishing or a combination of mechanical and chemical methods, and the light-emitting chip after thinning is 20-300 μm.

b) The material of the protective film prepared on the upper surface of the light-emitting chip is silicon dioxide or silicon nitride or a composite film composed of silicon dioxide and silicon nitride or metal or organic material or inorganic material or other films that can play a protective role Material. The preparation method of the protective film is electron beam evaporation, radio frequency sputtering, magnetron sputtering, sol-gel method or other film growth methods.

c) The adhesive material is photoresist or thermal curing adhesive or ultraviolet curing adhesive or other adhesive materials. The material of the upper protective sheet is silicon or glass or quartz or ceramics or aluminum or titanium or other inorganic materials or organic materials or metal materials.

d) The thinning method is mechanical thinning or chemical thinning, and the polishing method is mechanical polishing or chemical polishing.

B. Form the back island structure:

a) The masking layer material prepared on the lower surface of the thinned substrate is silicon dioxide or silicon nitride or a composite film composed of silicon dioxide and silicon nitride or metal or organic material or inorganic material or other materials that can play a role Protective film material.

b) Coating photoresist on the surface of the masking layer, performing pre-baking, exposure, development and post-baking to form a window with the same pattern as the flexible area.

c) Under the protection of the photoresist, the masking layer is etched or etched, so that the masking layer on the lower surface of the substrate opens a window.

d) The method of selectively etching the substrate to obtain the island structure on the lower surface is a dry etching process such as ICP or RIE or a wet etching process. The island structure pattern is a square, a rectangle, a circle or other shapes, which are the same as the shape of the light-emitting unit. It can also be done by lift-off process.

C. Prepare the lower electrode and the lower electrode lead:

a) The lower masking layer is removed by wet etching or dry etching. Prepare thin-film bottom electrodes and bottom electrode leads by lift-off process or coating-lithography-corrosion process, or prepare thick-film bottom electrodes and bottom electrode leads by thick-resist photolithography, evaporation and electroforming thickening processes.

The material of the lower electrode and the lower electrode lead is Cr/Au or Ti/Pt/Au or Ti/Mo/Au or AuGeNi/Au or Al or Cu, or made of Cr/Au or Ti/Pt/Au or Ti/Mo/Au Or a composite film composed of AuGeNi/Au and Cu or Au. The thin film evaporation method is electron beam evaporation or radio frequency sputtering or magnetron sputtering.

There are two methods for preparing the thick-film lower electrode and the lower electrode leads: 1. First, carry out thick photolithography to obtain a thick photoresist pattern opposite to the lower electrode pattern, and then vapor-deposit the lower electrode film, and the lower electrode is selected from Au or AuGeNi/Au or Ti/Pt/Au or Ti/Mo/Au or other metals with good ohmic contact characteristics with the substrate. After stripping, electroforming is performed to thicken the electrode. The electroformed material is the same or different from the evaporated film material.

2. First, vapor-deposit the lower electrode film, and the lower electrode is selected from Au or AuGeNi/Au or Ti/Pt/Au or Ti/Mo/Au or other metals with good ohmic contact characteristics with the substrate. Then perform thick resist photolithography to obtain a thick photoresist pattern opposite to that of the lower electrode. Electroforming makes the electrode thicker, and the electroforming material is the same or different from the evaporated film material. Finally, the thick photoresist is removed to obtain thick film electrodes.

D. Fixing on the back of the light-emitting chip: the adhesive material is photoresist or thermal curing adhesive or ultraviolet curing adhesive or other adhesive materials. The material of the lower protective sheet is silicon or glass or quartz or ceramics or aluminum or titanium or other metal materials or inorganic materials or organic materials.

E. Pixel segmentation of light-emitting chips:

a) Removing the adhesive between the upper protective sheet and the protective film by a wet or dry method, separating the upper protective sheet from the light-emitting chip, and exposing the protective film on the upper surface of the light-emitting chip.

b) The step of preparing the window in the diaphragm area is: forming a photoresist window pattern in the diaphragm area on the protective film through a photolithography process, and obtaining the pattern of the protective film by dry etching or wet etching under the protection of the photoresist window graphics. The thickness of the photoresist is 0.2 μm-15 μm, and the upper surface of the light-emitting chip is etched by ICP under the cover of the protective film and the photoresist. Reach the lower electrode to realize the pixel division of the light-emitting chip.

c) The protective film is removed by wet etching or dry etching.

F. Prepare the aperture area between the light emitting units:

a) The aperture material coated on the surface of the light-emitting chip that realizes pixel separation, that is, the pixel connection material is polyimide or flexible epoxy resin or polydimethylsiloxane (PDMS) or other film-forming materials that can be coated flexible organic materials. The pre-curing method is heat curing or room temperature curing.

b) removing the diaphragm material on the upper surface of the light-transmitting layer by photolithography and wet etching. Then remove the glue, and perform secondary etching with an etchant or a specific solvent to form a concave shape on the upper surface of the formed filling material.

G. Preparation of upper electrode and upper electrode lead: Prepare thin film upper electrode and upper electrode lead by lift-off process or coating-lithography-corrosion process, or prepare thick film by photolithography, evaporation and electroforming thickening process Membrane upper electrode and upper electrode lead.

The material of the upper electrode and the upper electrode lead is Cr/Au or Ti/Pt/Au or Ti/Mo/Au or AuGeNi/Au or Al or Cu, or made of Cr/Au or Ti/Pt/Au or Ti/Mo/Au Or a composite film composed of AuGeNi/Au and Cu or Au. The thin film evaporation method is electron beam evaporation or radio frequency sputtering or magnetron sputtering.

There are two methods for preparing the thick-film upper electrode and upper electrode leads: 1. Firstly, thick photolithography is carried out to obtain a thick photoresist pattern opposite to that of the upper electrode pattern, and then a thin film of the upper electrode is evaporated, and the upper electrode is selected from Au or AuGeNi/Au or Ti/Pt/Au or Ti/Mo/Au or other metals with good ohmic contact characteristics with the substrate. After stripping, electroforming is performed to thicken the electrode. The electroformed material is the same or different from the evaporated film material.

2. First, vapor-deposit the upper electrode film, and the upper electrode is selected from Au or AuGeNi/Au or Ti/Pt/Au or Ti/Mo/Au or other metals with good ohmic contact characteristics with the substrate. Then perform thick resist photolithography to obtain a thick photoresist pattern opposite to that of the upper electrode. Electroforming makes the electrode thicker, and the electroforming material is the same or different from the evaporated film material. Finally, the thick photoresist is removed to obtain thick film electrodes.

H. Preparation of microlens array: Coat a layer of polymer colloid on the light-emitting chip that has completed the upper electrode and the upper electrode lead. A polymer layer with higher adhesion; spin-coat a certain thickness of photoresist on the cured polymer, after pre-baking, exposure, and development, use the hot-melt method to make photoresist micro-lenses; then use reactive ion etching The photoresist microlens is transferred onto the aforementioned polymer by etching to obtain the polymer microlens. Polymer lens material is polyimide or epoxy or SU-8 photoresist.

Claims (10)

1. A micro-LED integrated array device, including a light-transmitting layer (1), a light-emitting layer (2), a reflective layer (3), a substrate (4), an upper electrode (5), an upper electrode lead (9), and a lower electrode ( 6), lower electrode lead wire (10), diaphragm (7), microlens (8), bonding material (12) and substrate (11); It is characterized in that, The light-transmitting layer (1), light-emitting layer (2), reflective layer (3), substrate (4) and microlens (8) form an LED light-emitting unit; the top of the reflective layer (3) is a light-emitting layer (2), light-transmitting layer (1) and microlens (8), the following of reflective layer (3) is substrate (4); Multiple LED light-emitting units are evenly arranged to form a light-emitting unit array, and light-emitting units are formed between light-emitting units. Diaphragm (7), said diaphragm (7) connects each light-emitting unit in turn and realizes the isolation of light-emitting units; the upper surface of the light-transmitting layer (1) is arranged with an upper electrode (5), and the upper surface of the diaphragm (7) The upper electrode leads (9) are arranged on the surface, the upper electrodes (5) in the same row are connected with the upper electrode leads (9) in sequence, and the lower electrodes (6) are arranged on the lower surface of the substrate (4). The lower surface of the diaphragm (7) is arranged with lower electrode leads (10), and the lower electrodes (6) in the same column are connected with the lower electrode leads (10) in sequence, and the lower electrodes (6) and the lower electrode leads ( 10) The lower lead column formed by the upper electrode (5) and the upper lead row (9) formed by the upper electrode lead (9) are perpendicular to the different planes in the arrangement direction; lower surface; A method for preparing the micro-LED integrated array device, the method is realized by the following steps: Step 1, the back side of the light-emitting chip is thinned, Step 11, select a light-emitting chip, the light-emitting chip is composed of a light-transmitting layer (1), a light-emitting layer (2), a reflective layer (3) and a substrate (4); Step 12, cleaning the light-emitting chip, and then preparing a protective film on the upper surface of the light-transmitting layer of the light-emitting chip; Step 13, using an adhesive to paste a protective sheet on the upper surface of the protective film, thinning the lower surface of the substrate of the light-emitting chip, and then performing polishing treatment; Step 2, forming an island structure on the back of the light-emitting chip; preparing a layer of masking layer on the lower surface of the thinned light-emitting chip substrate; coating the surface of the masking layer with photoresist, and opening the masking layer through photolithography and etching processes Out of the window, the shape of the window is the same as that of the flexible area; the substrate (4) is selectively etched to obtain an island structure on the back of the light-emitting chip; Step 3, preparing the lower electrode (6) and the lower electrode lead (10); removing the lower masking layer to prepare the lower electrode (6) and the lower electrode lead (10); then, preparing a flexible material on the lower surface of the substrate (4) ; Step 4, fixing the back of the light-emitting chip; using an adhesive to fix the lower surface of the substrate (4) of the light-emitting chip prepared with a flexible material on the back on the lower protective sheet; Step 5, pixel segmentation of the light-emitting chip to obtain multiple LED light-emitting units; Step 51, removing the upper protective sheet and the adhesive in step 13 to expose the protective film on the upper surface of the light-emitting chip; Step 52: Cleaning, photoetching and corroding the protective film on the light-emitting chip described in step 51 to expose the aperture window; performing ICP etching on the upper surface of the light-emitting chip under the cover of the protective film and photoresist to completely remove The light-emitting chip material in the flexible area realizes the pixel segmentation of the light-emitting chip; Step 6. Prepare the diaphragm area between the light emitting units; coat the diaphragm material on the upper surface of the light emitting chip that realizes the separation of the light emitting units, perform pre-curing, and remove the diaphragm on the upper surface of the light-transmitting layer (1) through photolithography and corrosion processes material, and make the upper surface of the formed aperture material form a concave shape by removing glue and corroding again; complete the complete curing of the aperture material, and remove the protective film on the upper surface of the light-transmitting layer (1); Step 7, preparing the upper electrode (5) and the upper electrode lead (9); Step 8, preparing a microlens (8); preparing a high-adhesion polymer layer on the light-emitting chip that has completed the upper electrode (5) and the upper electrode lead (9), and obtaining a polymer microlens by a hot-melt method; Step 9, removing the lower protective sheet and the adhesive on the lower surface of the substrate of the light-emitting chip, making circuit leads, and completing the manufacture of the LED device. 2. The micro-LED integrated array device according to claim 1, characterized in that, the shape of the light-emitting unit is square, rectangular or circular; the shape of the lower electrode (6) is rectangular, circular, or single strip or double strips; the shape of the upper electrode (5) is back-shaped, circular, single-striped or double-striped. 3. The method for preparing the micro-LED integrated array device according to claim 1 is characterized in that the method is realized by the following steps: Step 1, the back side of the light-emitting chip is thinned, Step 11, select a light-emitting chip, the light-emitting chip is composed of a light-transmitting layer (1), a light-emitting layer (2), a reflective layer (3) and a substrate (4); Step 12, cleaning the light-emitting chip, and then preparing a protective film on the upper surface of the light-transmitting layer of the light-emitting chip; Step 13, using an adhesive to paste a protective sheet on the upper surface of the protective film, thinning the lower surface of the substrate of the light-emitting chip, and then performing polishing treatment; Step 2, forming an island structure on the back of the light-emitting chip; preparing a layer of masking layer on the lower surface of the thinned light-emitting chip substrate; coating the surface of the masking layer with photoresist, and opening the masking layer through photolithography and etching processes Out of the window, the shape of the window is the same as that of the flexible area; the substrate (4) is selectively etched to obtain an island structure on the back of the light-emitting chip; Step 3, preparing the lower electrode (6) and the lower electrode lead (10); removing the lower masking layer to prepare the lower electrode (6) and the lower electrode lead (10); then, preparing a flexible material on the lower surface of the substrate (4) ; Step 4, fixing the back of the light-emitting chip; using an adhesive to fix the lower surface of the substrate (4) of the light-emitting chip prepared with a flexible material on the back on the lower protective sheet; Step 5, pixel segmentation of the light-emitting chip to obtain multiple LED light-emitting units; Step 51, removing the upper protective sheet and the adhesive in step 13 to expose the protective film on the upper surface of the light-emitting chip; Step 52: Cleaning, photoetching and corroding the protective film on the light-emitting chip described in step 51 to expose the aperture window; performing ICP etching on the upper surface of the light-emitting chip under the cover of the protective film and photoresist to completely remove The light-emitting chip material in the flexible area realizes the pixel segmentation of the light-emitting chip; Step 6. Prepare the diaphragm area between the light emitting units; coat the diaphragm material on the upper surface of the light emitting chip that realizes the separation of the light emitting units, perform pre-curing, and remove the diaphragm on the upper surface of the light-transmitting layer (1) through photolithography and corrosion processes material, and make the upper surface of the formed aperture material form a concave shape by removing glue and corroding again; complete the complete curing of the aperture material, and remove the protective film on the upper surface of the light-transmitting layer (1); Step 7, preparing the upper electrode (5) and the upper electrode lead (9); Step 8, preparing a microlens (8); preparing a high-adhesion polymer layer on the light-emitting chip that has completed the upper electrode (5) and the upper electrode lead (9), and obtaining a polymer microlens by a hot-melt method; Step 9, removing the lower protective sheet and the adhesive on the lower surface of the substrate of the light-emitting chip, making circuit leads, and completing the manufacture of the LED device. 4. method according to claim 3, is characterized in that, the material of described upper electrode (5), upper electrode lead wire (9), lower electrode (6) and lower electrode lead wire (10) is Cr/Au, Ti Any one of /Pt/Au, Ti/Mo/Au, AuGeNi/Au, Al or Cu, or composed of Cr/Au, Ti/Pt/Au, Ti/Mo/Au or AuGeNi/Au and Cu A composite film, or a composite film composed of Cr/Au, Ti/Pt/Au, Ti/Mo/Au or AuGeNi/Au and Au. 5. method according to claim 3 is characterized in that, the method for preparing upper electrode (5), upper electrode lead (9), lower electrode (6) and lower electrode lead (10) is: by lift-off process Or coating, photolithography and corrosion process to prepare thin film lower electrode and lower electrode lead, or prepare thick film lower electrode and lower electrode lead through thick glue photolithography, evaporation and electroforming thickening process. 6. The method according to claim 5, characterized in that, the specific method for preparing the upper electrode, the upper electrode lead, the lower electrode and the lower electrode lead is: firstly carry out thick glue photolithography to obtain the pattern of the upper electrode or the lower electrode For the opposite thick photoresist pattern, the upper electrode or the lower electrode film is evaporated, and after peeling off, electroforming is performed to thicken the electrode; the electroforming material is the same or different from the evaporated film material. 7. The method according to claim 5, characterized in that, the specific method for preparing the upper electrode, the upper electrode lead wire, the lower electrode and the lower electrode lead wire is: first evaporate the upper electrode or the lower electrode film, and then carry out thick glue Photolithography obtains a thick photoresist pattern opposite to that of the upper or lower electrode; electroforming makes the electrode thicker, and the electroforming material is the same or different from the evaporated film material; finally, the thick photoresist is removed to obtain a thick film electrode. 8. The method according to claim 3, characterized in that, the specific process of preparing the microlens (8) is: coating a layer of polymer on the LED light-emitting unit that completes the upper electrode (5) and the upper electrode lead (9) Colloidal layer, the thickness of the colloidal layer is determined according to the design and process experiments; the polymeric colloidal layer is UV-cured or thermally cured to obtain a polymer layer with high adhesion; spin coating on the cured polymer Resist, after prebaking, exposure, developing, adopt hot-melt method to make photoresist microlens; Adopt reactive ion etching to transfer photoresist microlens on the polymer layer, obtain polymer microlens ( 8). 9. The method according to claim 3, wherein the material of the upper protective film and the lower protective film is silicon dioxide or silicon nitride or a composite film composed of silicon dioxide and silicon nitride. 10. The method according to claim 3, characterized in that, after the lower surface of the substrate (4) of the light-emitting chip described in step one or three is thinned, the thickness of the light-emitting chip is 20-300 μm.