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CN103545282A - Insulated gate bipolar thyristor module and electrode power terminal - Google Patents

Insulated gate bipolar thyristor module and electrode power terminal Download PDF

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Publication number
CN103545282A
CN103545282A CN201310541204.1A CN201310541204A CN103545282A CN 103545282 A CN103545282 A CN 103545282A CN 201310541204 A CN201310541204 A CN 201310541204A CN 103545282 A CN103545282 A CN 103545282A
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China
Prior art keywords
electrode
power terminal
chip
liner plate
battery lead
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CN201310541204.1A
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Chinese (zh)
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CN103545282B (en
Inventor
徐凝华
刘国友
吴义伯
窦泽春
忻兰苑
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Zhuzhou CRRC Times Electric Co Ltd
Zhuzhou CRRC Times Semiconductor Co Ltd
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Zhuzhou CSR Times Electric Co Ltd
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Publication of CN103545282A publication Critical patent/CN103545282A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance

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Abstract

The invention provides an insulated gate bipolar thyristor module and an electrode power terminal. The electrode power terminal comprises a first electrode and a second electrode, and the first electrode and the second electrode are composed of a multi-layer board. The multi-layer board comprises N layers of electrode plates, and insulated plates are arranged between two adjacent layers of electrode plates. Electrical connection is achieved among M layers of electrode plates through at least one first through hole so as to form the first electrode, and each first through hole is electrically insulated from each electrode plate except the M layers of electrode plates, and at least one layer of electrode plates except the M layers of electrode plates form the second electrode. Due to the fact that the multiple layers of electrode plates are electrically connected through the first through holes, alternate arrangement of the multiple layers of electrode plates can be achieved, the electrode parallel opposite area can be increased, parasitic inductance can be reduced, and the parasitic inductance generated by the insulated gate bipolar thyristor module based on the electrode power terminal is low.

Description

Insulated gate bipolar thyristor module and electrode power terminal
Technical field
The present invention relates to power electronic equipment technical field, particularly a kind of insulated gate bipolar thyristor module and electrode power terminal.
Background technology
In power semiconductor modular, drawing of the interconnection of chip and electrode power terminal, all can bring a certain amount of stray inductance, and these stray inductances can cause negative effect to circuit and device.
Conventionally, the stray inductance of inside modules mainly contains the structures shape of liner plate circuit layout and electrode power terminal.Wherein, the stray inductance being produced by electrode power terminal accounts for major part.
At present, conventional electrode power terminal as shown in Figure 1, is two parallel battery lead plates 01 and 02.In order to reduce the inductance of electrode power terminal, at present mostly by making two parallel electrode plates 01 and 02 distance near reducing two parallel electrode plates parallel to each other.Simultaneously make the to flow through current opposite in direction of two parallel electrode plates, makes to produce mutual inductance between two parallel electrode plates like this, and the mutual inductance of this generation can slacken self-induction separately.The formula I of the stray inductance of being introduced by electrode power terminal rerminal=I collect+ I emitter-2M terminal(wherein, I collectfor the self-induction of collector electrode, I emitterfor the self-induction of emitter, M terminalbe the mutual inductance of two electrodes) known, the mutual inductance that electrode power terminal produces is larger, total stray inductance I of its generation terminalless.Because two battery lead plates are at a distance of nearer, parallel relative area is larger, mutual inductance M terminallarger, total inductance is less.But in order to guarantee the electric insulation of two parallel electrode plates, even if be provided with the insulating material of high insulation resistance between two parallel electrode plates, the distance of two parallel electrode plates also needs to meet certain requirements.This just makes the inductance introduced by electrode power terminal larger.Because the inductance of being introduced by electrode power terminal occupies sizable ratio in the total stray inductance of module, therefore, the stray inductance that reduces the introducing of electrode power terminal has remarkable result to reducing the stray inductance of module, therefore, how reducing the stray inductance that electrode power terminal introduces is those skilled in the art's problems urgently to be resolved hurrily.
Summary of the invention
In view of this, on the one hand, the invention provides a kind of new electrode power terminal, can reduce the stray inductance of insulated gate bipolar thyristor module, especially reduce the stray inductance of introducing due to electrode power terminal.
On the other hand, the present invention also provides a kind of insulated gate bipolar thyristor module of the low stray inductance based on above-mentioned electrode power terminal.
In order to realize foregoing invention object, the present invention has adopted following technical scheme:
A kind of electrode power terminal, at least comprise, the first electrode and the second electrode, described the first electrode and described the second electrode consist of a multi-layer sheet, described multi-layer sheet comprises N layer battery lead plate, between adjacent two layers battery lead plate, be provided with insulation board, wherein, between M layer battery lead plate, by least one first through hole, realize electrical connection and form described the first electrode, and the first through hole and the equal electric insulation of each battery lead plate except described M layer battery lead plate described in each, at least one deck battery lead plate except described M layer battery lead plate forms described the second electrode;
Wherein, M >=2, N >=3, N>M, M, N are natural number.
More preferably, described battery lead plate except described M layer battery lead plate at least comprises two-layer, described at least one deck battery lead plate except described M layer battery lead plate forms the second electrode of described electrode power terminal, be specially, each battery lead plate except described M layer battery lead plate is realized electrical connection by least one second through hole and is formed described the second electrode, and the equal electric insulation of each battery lead plate of described the second through hole and described M layer battery lead plate.
More preferably, also comprise third electrode, described battery lead plate except described M layer battery lead plate at least comprises two-layer, described battery lead plate except described M layer battery lead plate comprises first and second portion, wherein, the battery lead plate of described first forms described the second electrode, and the battery lead plate of described second portion forms described third electrode.
More preferably, described first at least comprises two-layer battery lead plate, and the battery lead plate of described first is realized electrical connection by least one second through hole and formed described the second electrode.
More preferably, described second portion at least comprises two-layer battery lead plate, and the battery lead plate of described second portion is realized electrical connection by least one third through-hole and formed described third electrode.
A kind of insulated gate bipolar thyristor module, comprise, at least one liner plate, be positioned at least one igbt chip, at least one FRD chip and electrode power terminal on described liner plate, described electrode power terminal adopts the electrode power terminal described in claim 1-5 any one, described the first electrode is collector electrode, and described the second electrode is emitter;
The collector electrode electrical connection of the negative electrode of the collector electrode of described igbt chip and described FRD chip and described electrode power terminal, the anode of the emitter of described igbt chip and FRD chip and the electrical connection of the emitter of described electrode power terminal;
Wherein, at least one igbt chip and/or at least one FRD chip to and the described electrode power terminal of its electrical connection between current path be the path of near linear, at least one current loop forming between described electrode power terminal and described liner plate is perpendicular to described liner plate.
More preferably, on same described liner plate, described electrode power terminal is positioned on described liner plate center line, on described liner plate, be provided with at least two igbt chips and at least two FRD chips, the position of described igbt chip on described liner plate is symmetrical about the centerline axis of described liner plate, and/or the position of described FRD chip on described liner plate is symmetrical about the centerline axis of described liner plate.
More preferably, on same described liner plate, described igbt chip and FRD chip are positioned at the same side of described electrode power terminal.
A kind of insulated gate bipolar thyristor module, comprise at least one liner plate, be positioned at least two igbt chips on described liner plate, at least two FRD chips and electrode power terminal, described electrode power terminal adopts the electrode power terminal described in claim 3-5 any one, described the first electrode is direct current positive electrode, described the second electrode is for exchanging output stage, and described third electrode is direct current negative electrode;
Described modular circuit is half-bridge circuit, and wherein, at least one igbt chip and at least one FRD chip form first brachium pontis, and other at least one igbt chip and other at least one FRD chip form second brachium pontis;
The collector electrode of igbt chip of described first brachium pontis of composition and the negative electrode of FRD chip and the electrical connection of described direct current positive electrode, the emitter of igbt chip and the anode of FRD chip that form described first brachium pontis are electrically connected with the output stage that exchanges of described electrode power terminal;
The collector electrode of igbt chip and the negative electrode of FRD chip that form described second brachium pontis are electrically connected with the output stage that exchanges of described electrode power terminal, form the emitter of igbt chip and the anode of FRD chip and the electrical connection of described direct current negative electrode of described second brachium pontis;
Wherein, at least one igbt chip and/or at least one FRD chip to and the described electrode power terminal of its electrical connection between current path be the path of near linear, at least one current loop forming between described electrode power terminal and described liner plate is perpendicular to described liner plate.
More preferably, on same described liner plate, be provided with at least two igbt chips and at least two FRD chips, described electrode power terminal is positioned on described liner plate center line, described igbt chip is positioned at the both sides of described electrode power terminal, and/or described FRD chip is positioned at the both sides of described electrode power terminal.
More preferably, on same described liner plate, described igbt chip and FRD chip are positioned at the same side of described electrode power terminal.
A kind of insulated gate bipolar thyristor module, it is characterized in that, comprise at least one liner plate, be positioned at least two igbt chips on described liner plate, at least two FRD chips and electrode power terminal, on described liner plate, be also provided with interchange output stage, described electrode power terminal adopts the electrode power terminal described in above-mentioned any one, and described the first electrode is direct current positive electrode, and described the second electrode is direct current negative electrode;
Described modular circuit is half-bridge circuit, and wherein, at least one igbt chip and at least one FRD chip form first brachium pontis, and other at least one igbt chip and other at least one FRD chip form second brachium pontis;
The described collector electrode of igbt chip of first brachium pontis of composition and the electrical connection of the direct current positive electrode of the negative electrode of FRD chip and described electrode power terminal, the emitter of igbt chip and the anode of FRD chip that form described first brachium pontis are electrically connected with the output stage that exchanges on described liner plate;
The collector electrode of igbt chip and the negative electrode of FRD chip that form described second brachium pontis are electrically connected with the output stage that exchanges on described liner plate, form the described emitter of igbt chip of second brachium pontis and the electrical connection of the direct current negative electrode of the anode of FRD chip and described electrode power terminal;
Wherein, at least one igbt chip and/or at least one FRD chip to and the described electrode power terminal of its electrical connection between current path be the path of near linear.
More preferably, on same described liner plate, be provided with at least two igbt chips and at least two FRD chips, described electrode power terminal is positioned on described liner plate center line, the position of described igbt chip on described liner plate is symmetrical about the centerline axis of described liner plate, and/or the position of described FRD chip on described liner plate is symmetrical about the centerline axis of described liner plate.
More preferably, on same described liner plate, described igbt chip and FRD chip are positioned at the same side of described electrode power terminal.
A thyristor module, described modular circuit is three-phase inverter circuitry, described three-phase inverter circuitry is comprised of three half-bridge circuits described in above-mentioned any one.
More preferably, described in each, the negative electrode of the collector electrode of the igbt chip of first brachium pontis of half-bridge circuit and FRD chip links together, described in each together with the anodic bonding of the emitter of the igbt chip of second brachium pontis of half-bridge circuit and FRD chip.
The present invention has following technique effect:
On the one hand, the electrode power terminal that the embodiment of the present invention provides, comprise the first electrode and the second electrode that by a multi-layer sheet, are formed, this multi-layer sheet comprises multi-layer electrode plate, and be provided with insulation board between adjacent two layers battery lead plate, at least two-layer the first electrode of realizing this electrode power terminal of electrical connection formation by least one first through hole in this multi-layer electrode plate, remaining whole battery lead plate or partial electrode plate form the second electrode of this electrode power terminal.Owing to being provided with insulation board between adjacent electrode plates, so the distance between two electrode layers is the thickness of insulation board, guaranteeing under required dielectric strength, distance compared to two electrode power terminals of the prior art, electrode power terminal of the present invention has dwindled the distance between its two electrode layer, and dwindling of electrode layer spacing is conducive to reduce because of the stray inductance of power terminal to module introducing.In addition, owing to realizing electrical connection by the first through hole between multi-layer electrode plate, can realize multi-layer electrode plate alternately, can increase so the parallel relative area of electrode, can further reduce stray inductance.
On the other hand, a busbar need to fix and weld to the electrode power terminal that adopts the embodiment of the present invention to provide only on liner plate, can design neatly lining plate structure, can eliminate the conventional power terminal problems such as complexity that cannot interconnect or interconnect.And the collector electrode of module, emitter can be integrated on a busbar, have simplified frock and technical process.
On the other hand, the insulated gate bipolar thyristor module that the embodiment of the present invention provides, adopt above-mentioned electrode power terminal, the collector electrode electrical connection of the negative electrode of the collector electrode of the igbt chip on its liner plate and FRD chip and electrode power terminal, the emitter electrical connection of the anode of the emitter of igbt chip and FRD chip and electrode power terminal, wherein, at least one igbt chip and/or at least one FRD chip to and the collector electrode of the electrode power terminal with through hole of its electrical connection between current path be the path of near linear, like this, can shorten as much as possible current path.Simultaneously, electric current covers copper layer from the collector electrode leg inflow liner plate of electrode power terminal, then the chip of flowing through, by metallic bond zygonema with cover copper layer, from the emitter of electrode power terminal, flow out, thus formed current loop is vertical with the plane at described liner plate place, and the area that current loop is enclosed is less, is conducive to reduce stray inductance.
Accompanying drawing explanation
In order more clearly to understand the technical scheme of the embodiment of the present invention or prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structural representation of conventional electrodes power terminal in prior art;
Fig. 2 is the perspective view of a kind of electrode power terminal of the embodiment of the present invention one;
Fig. 3 is that the A of Fig. 2 of electrode power terminal of the embodiment of the present invention one is to view;
Fig. 4 is the perspective view of the another kind of electrode power terminal of the embodiment of the present invention one;
Fig. 5 is the perspective view of the electrode power terminal of the embodiment of the present invention two;
Fig. 6 (1) is conventional liner plate layout schematic top plan view of the prior art, and Fig. 6 (2) is the current loop schematic diagram of the conventional liner plate layout shown in Fig. 6 (1);
Fig. 7 is the first liner plate schematic layout pattern of the embodiment of the present invention three;
Fig. 8 (1) is the first liner plate current loop schematic diagram of the module of the embodiment of the present invention three;
The first liner plate current loop end view of the module of Fig. 8 (2) embodiment of the present invention three;
Fig. 9 is the second liner plate schematic layout pattern of the embodiment of the present invention three;
Figure 10 is the modular circuit schematic diagram of the embodiment of the present invention three;
Figure 11 is the liner plate schematic layout pattern of the embodiment of the present invention four;
Figure 12 is the electrical block diagram of the embodiment of the present invention four;
Figure 13 is the liner plate schematic layout pattern of the embodiment of the present invention five;
Figure 14 is the liner plate schematic layout pattern of the embodiment of the present invention six;
Figure 15 (1) and Figure 15 (2) are the electrical block diagrams of the embodiment of the present invention six.
Accompanying drawing explanation:
1, substrate, 2, liner plate, 3, son covers copper layer, 4, igbt chip, 5, FRD chip, 6, metallic bond zygonema, 7, leg, 8, battery lead plate, 9, insulation board, 801, the collector electrode of existing electrode power terminal, 802, the emitter of existing electrode power terminal, 803, collector electrode with the multi-layered electrode power terminal of through hole, 804, emitter with the multi-layered electrode power terminal of through hole, 803c, outside collector electrode and portion coupling part, 804e, emitter and external connecting are divided, 805, direct current positive electrode, 806, direct current negative electrode, 807, exchange output stage, 9, insulation board, 910, the first through hole.
Embodiment
Below with reference to specific embodiment mode shown in the drawings, describe the present invention; but these execution modes do not limit the present invention, the conversion in the structure that those of ordinary skill in the art makes according to these execution modes, method or function is all included in protection scope of the present invention.
In addition, may use label or the sign of repetition in different embodiment, these only repeat, in order simply clearly to narrate the present invention, not represent between discussed different embodiment and/or structure and to have any relevance.
The invention provides the embodiment of electrode power terminal and insulated gate bipolar thyristor module two aspects based on this power terminal.
The embodiment of the electrode power terminal of the insulated gate bipolar thyristor module that the paper embodiment of the present invention provides.
Embodiment mono-
As shown in Figures 2 and 3, the electrode power terminal that embodiment mono-provides is two compound electrode power terminals, and it comprises, the first electrode 803, the second electrode 804, and wherein, the first electrode 803 and the second electrode 804 consist of a Multilayer Structure.
This Multilayer Structure comprises N(N >=3, and N is natural number) layer battery lead plate 8, and between between adjacent two layers battery lead plate 8, be separated with insulation board 9.In this Multilayer Structure, M(M >=2 wherein, M<N, M is natural number) by least one first through hole 910, realize electrical connection between layer battery lead plate, make this M layer battery lead plate form the first electrode 803 of electrode power terminal, and between every one deck battery lead plate of this first through hole 910 around and in remaining (N-M) layer battery lead plate, all have insulating barrier to separate to realize electric insulation.At least one deck battery lead plate in remaining (N-M) layer battery lead plate forms the second electrode 804 of this electrode power terminal.It should be noted that, described M layer battery lead plate can be mutual adjacent battery lead plate, can be also non-conterminous.Specifically, set Multilayer Structure be followed successively by a direction the first battery lead plate, the second battery lead plate ..., N battery lead plate, so described M layer battery lead plate can comprise the first battery lead plate, the second battery lead plate ..., the M layer battery lead plate such as M battery lead plate, in addition.Described M layer battery lead plate also can comprise the first battery lead plate, third electrode plate ..., the M layer battery lead plate such as M battery lead plate, N battery lead plate.
Specifically, in remaining (N-M) layer battery lead plate, can only have one deck battery lead plate as the second electrode 804 of this electrode power terminal.In addition, if have at least two-layer battery lead plate in remaining (N-M) layer battery lead plate, the every one deck battery lead plate that is somebody's turn to do (N-M) layer battery lead plate can also be realized electrical connection by least one second through hole (not shown), make the integral body of remaining (N-M) layer battery lead plate formation as the second electrode 804 of electrode power terminal.It should be noted that, the every one deck battery lead plate in the M layer battery lead plate of this second through hole and formation the first electrode 803 is all realized electrode insulation by insulating barrier.
At least two-layer battery lead plate in partial electrode plate in remaining (N-M) layer battery lead plate can certainly be realized to electrical connection by the second through hole, make it form the second electrode 804 of electrode power terminal, now, this second through hole and the battery lead plate electric insulation except the battery lead plate of formation the second electrode 804.
This electrode power terminal also comprises the first electrode 803 and the outside part 803c being connected, the second electrode 804 and the outside part 804e being connected.As one embodiment of the present of invention, as shown in Figure 2 or Figure 3, the part 804e that this first electrode 803 is connected with outside with the outside part 803c being connected and the second electrode 804 can be from the Base top contact of Multilayer Structure, and extends upward.In addition, as shown in Figure 4, this first electrode 803 can also be drawn by the side of Multilayer Structure with the outside part 804e being connected with the outside part 803c being connected and the second electrode 804, and extends upward.
Guaranteeing under the prerequisite of certain mechanical strength any thickness that electrode layer (comprising the first electrode 803 and the second electrode 804) can be designed to be able to meet the demands with the outside part 803c being connected and 804e.
And the first electrode 803 divides 803c to be electrically connected by through hole and its external connecting; The second electrode 804 divides 804e to be electrically connected by through hole and its external connecting.The first electrode 803 divides 804e to insulate by the external connecting of insulating barrier and the second electrode, and the second electrode 804 divides 803c to insulate by insulating barrier and the first electrode and external connecting.
In order to realize the electrical connection of electrode power terminal and insulated gate bipolar thyristor module, this electrode power terminal also comprises from the first electrode 803 and the outward extending a plurality of legs 7 of the second electrode 804.In fact, by outward extending the first leg of the first electrode 803 with by outward extending the second leg of the second electrode 804, can extend to any direction, but the convenience being connected for the chip with on liner plate, this first leg and the second leg can extend (as shown in Figures 2 and 3) to the both sides of Multilayer Structure, also can extend (as shown in Figure 4) to the same side of Multilayer Structure, further, this first leg and the second leg can form respectively the structure that the center line about Multilayer Structure distributes axisymmetricly.
In the electrode power terminal that the embodiment of the present invention one provides, owing to being provided with insulation board between adjacent electrode plates, so the distance between two battery lead plates is the thickness of insulation board, because the first electrode 803 and second electrode 804 of electrode power terminal forms by battery lead plate, so the distance between the first electrode 803 and the second electrode 804 is the thickness of one deck insulation board 9.Distance compared to the electrode power terminal of routine of the prior art, distance between two electrode layers of the electrode power terminal of the embodiment of the present invention is less, spacing between less electrode layer, is conducive to increase the area of the opposing parallel of two electrode layers, thus the mutual inductance M that two electrode layers are produced terminallarger, according to formula I terminal=I collect+ I emitter-2M terminalknown, the reducing of the distance between two electrode layers can reduce the stray inductance that electrode power terminal is introduced to module.In addition, owing to realizing electrical connection by through hole between multi-layer electrode plate, can realize multi-layer electrode plate alternately, so also can increase the parallel relative area of electrode, can further reduce stray inductance.
On the other hand, adopt conventional electrode power terminal, need on liner plate, fix respectively the first electrode and the second electrode, and the electrode power terminal that adopts the embodiment of the present invention to provide, only need on liner plate, fix and weld a busbar, lining plate structure can be designed neatly, the conventional power terminal problem such as complicated that cannot interconnect or interconnect can be eliminated.And, due to this electrode power terminal integrated two electrode layers, so the collector electrode of insulated gate bipolar thyristor module, emitter can be integrated on a busbar, have simplified frock and technical process.
In addition, multi-layered electrode power terminal provided by the invention not only can integrated two electrodes, can also integrated plural electrode.Specifically can be referring to embodiment bis-.
Embodiment bis-
As shown in Figure 5, electrode power terminal that embodiment bis-provides is integrated three electrode layers, as shown in the enlarged drawing on the right, are respectively the first electrode 805, the second electrode 806 and third electrode 807.The present embodiment and embodiment mono-have many similarities, and for the sake of brevity, the present embodiment highlights its difference, and the part identical with embodiment mono-refers to the detailed description of embodiment mono-.
The difference of the electrode power terminal that the electrode power terminal that the present embodiment provides and embodiment mono-provide is only that the electrode power terminal of the present embodiment has increased a third electrode 807, correspondingly, also increased a third electrode 807 with the outside part 807j being connected with by outward extending the 3rd leg of third electrode 807.
Identical with embodiment mono-, this electrode power terminal comprises N(N >=3, N is natural number) layer battery lead plate, wherein, M(M >=2, M<N, M is natural number) layer battery lead plate realize electrical connection by least one first through hole (not shown in Fig. 5) and form the first electrode 805, remaining in the present embodiment (N-M) layer battery lead plate at least comprises two-layer, this remaining (N-M) layer battery lead plate is divided into again first and second portion, wherein the battery lead plate of first forms the second electrode 806, and the battery lead plate of second portion forms third electrode 807.It should be noted that each battery lead plate in the battery lead plate of ，Dui first and the battery lead plate of second portion do not do locational restriction.
Specifically, when the battery lead plate of first at least comprises two-layer battery lead plate, part or all of battery lead plate in the battery lead plate of this first can form the second electrode 806, when having at least two-layer battery lead plate to form the second electrode 806, the battery lead plate that forms this second electrode 806 can also be realized electrical connection by least one the second through hole.This second through hole and the equal electric insulation of battery lead plate except the battery lead plate of formation the second electrode 806.
Equally, if forming the battery lead plate of third electrode 807 and be the battery lead plate of second portion at least comprises when two-layer, part or all of battery lead plate in the battery lead plate of this second portion can form third electrode 807, when having at least two-layer battery lead plate to form third electrode 807, the battery lead plate that forms this third electrode 807 can pass through at least one third through-hole (not shown in Fig. 5) and realize electrical connection.This third through-hole and the equal electric insulation of battery lead plate except the battery lead plate of formation third electrode 807.
That is to say, when the battery lead plate of formation electrode comprises multilayer, the Different electrodes plate of same electrode is realized electrical connection by through hole; Between Different electrodes plate, by insulating barrier, realize mutually insulated.
Basic identical about third electrode 807 and the outside part 807j being connected and the part 804e being connected with outside by the position part 803c that the first electrode 803 with embodiment mono-in is connected with outside with structural relation of outward extending the 3rd leg of third electrode 807 and the first leg or the second electrode 804 and the second leg, those skilled in the art can be known at an easy rate according to the conventional techniques means of the detailed description of embodiment mono-and this area and common practise.For the sake of brevity, at this, be not described in detail.
Electrode power terminal that embodiment bis-provides is integrated three electrode layers, except the beneficial effect of the electrode power terminal described in thering is embodiment mono-, can also be electrically connected to three electrodes in insulated gate bipolar thyristor module, when the circuit of insulated gate bipolar thyristor module is half-bridge circuit or three-phase inverter circuitry, direct current positive electrode wherein, direct current negative electrode and interchange output stage can be integrated on a busbar, have simplified frock and technical process.
The electrode power terminal providing based on above-described embodiment one and embodiment bis-, the embodiment of the present invention also provides the embodiment of the insulated gate bipolar thyristor module of low stray inductance.In detail referring to embodiment tri-to embodiment six.
Embodiment tri-
First, the electrode power terminal providing based on above-described embodiment one and embodiment bis-, the embodiment of the present invention provides the liner plate layout embodiment of low stray inductance.
At present, in order to reduce the stray inductance of power semiconductor modular, in insulated gate bipolar thyristor module, the circuit normal arrangement of liner plate is as shown in Fig. 6 (1).For convenience of description, Fig. 6 (1) shows 2 liner plates 2, is provided with a plurality of sons and covers copper layer 3 on each liner plate, contains 4 igbt chips 4 and corresponding FRD chip 5 on each liner plate 2.Igbt chip 4 and FRD chip 5 are symmetrically distributed in the both sides of electrode power terminal about the center line of liner plate, the cathode weld of the collector electrode of igbt chip 4 and FRD chip 5 is covered on copper layer 3 to liner plate, thereby realizes electrical connection with the Power of collector terminal 801 that is welded to same son and covers copper layer 3; The anode of the emitter of igbt chip 4 and FRD chip 5 is connected electrically to another son by metallic bond zygonema 6 and covers copper layer, this son covers the zone line that copper layer is usually located at liner plate 2, and the copper layer that covers that it is connected with Power of collector terminal 801 is realized electric insulation by certain gap.Emitter power terminal 802 is welded to this son and covers on copper layer, thus the electrical connection of realization and igbt chip emitter and FRD chip anode.
The liner plate circuit layout of this routine, its advantage is that electrical connection is simple, and the electrode power terminal design matching is easy, and chip layout employing symmetrical structure, and part has reduced the stray inductance of circuit.The liner plate circuit layout of this routine, the in the situation that of general power density, can meet the demands, and still, the circuit loop of each chip in this liner plate circuit layout is all parallel to liner plate surface, as shown in Fig. 6 (2).Cause module chip current loop to enclose area larger.
In addition, take Fig. 6 (1) or 6(2) shown in conventional liner plate be example, on liner plate, be welded with 4 igbt chips, 2 FRD chips, there are respectively 2 igbt chips and 1 FRD chip in liner plate both sides, both sides are symmetrical.The current loop of igbt chip 401 is L1, and its loop stray inductance is l1, and 402 current loop is L2, and its loop stray inductance is l2, and 403 current loop is L3, and its loop stray inductance is l3, and 404 current loop is L4, and its loop stray inductance is l4.4 igbt chips are in parallel on circuit, and total inductance can simply be expressed as: lIGBT=l1||l2||l3||l4.
Because chip is symmetrical, can think that loop L1 and L2 are symmetrical, L3 and L4 are symmetrical, so, lIGBT ≈ (l2/2) || (l3/2).
In order to overcome the defect that in prior art, the area that current loop encloses of module chip is larger and further to reduce the stray inductance of bringing due to liner plate layout, the electrode power terminal providing based on above-described embodiment the invention provides a kind of new liner plate layout.In conjunction with Fig. 7, the liner plate layout that the embodiment of the present invention is provided is described in detail.Fig. 7 is the liner plate schematic layout pattern described in embodiment.For convenience of description, Fig. 7 shows 2 liner plates, on each liner plate, be provided with 4 igbt chip 4(and be respectively 401 ', 402 ', 403 ' and 404 ') and 2 FRD chips 5, on each liner plate, be also provided with electrode power terminal 80, this electrode power terminal 80 adopts the electrode power terminal described in above-described embodiment one or embodiment bis-, wherein the first electrode 803 of this electrode power terminal 80 can be collector electrode 803, and the second electrode 804 of this electrode power terminal can be emitter 804.
In order to reduce the stray inductance of insulated gate bipolar thyristor module, electrode power terminal 80 is positioned at the middle part of described liner plate, and on one bar center line, igbt chip 4 and FRD chip 5 are symmetrically distributed in the both sides of electrode power terminal 80.As shown in Figure 7, igbt chip 401 ' and 403 ' is positioned at the left side of described electrode power terminal 80, and igbt chip 402 ' and 404 ' is positioned at the right side of electrode power terminal 80.For the ease of the igbt chip 4 on electrode power terminal 80 and liner plate and the electrical connection of FRD chip 5, the first leg of this electrode power terminal 80 and the second leg extend to the both sides of the Multilayer Structure of electrode power terminal 80 respectively, and the center line that can also further form about Multilayer Structure distributes axisymmetricly.
In the present embodiment, 4 igbt chip 4(are respectively 401 ', 402 ', 403 ' and 404 ') collector electrode and 803 electrical connections of the negative electrode of FRD chip 5 and the collector electrode of electrode power terminal 80, the anode of the emitter of igbt chip and FRD chip is electrically connected with the emitter of electrode power terminal 80 804.
Due on same liner plate, conventionally can be provided with several different sons and cover copper layer 3, different sons cover electric insulation between copper layer.For convenience of description, in the embodiment of the present invention, set and on same liner plate, be provided with N son and cover copper layer, be respectively the first son cover copper layer, the second son cover copper layer ..., N covers copper layer.
Collector electrode 803 electrical connections of the negative electrode of the collector electrode of described igbt chip and FRD chip and electrode power terminal 80, can be specially, the first son that the negative electrode of the collector electrode of described igbt chip and described FRD chip is connected to described liner plate covers on copper layer, described the first son covers copper layer and 803 electrical connections (that is to say, first leg of being drawn by the collector electrode 803 of electrode power terminal is welded on the first son and covers on copper layer) of described collector electrode.The mode of this realization electrical connection, the nearer situation of leg of the collector electrode of the applicable collector electrode of igbt chip and the cathode distance electrode power terminal of FRD chip.
When both apart from each others, one or more sons of can take cover copper layer as wire, and the collector electrode 803 of the negative electrode of the collector electrode of igbt chip and FRD chip and electrode power terminal is coupled together.Be specifically as follows, the first son that the negative electrode of the collector electrode of igbt chip and FRD chip is first connected to liner plate covers on copper layer, this first son covers copper layer and by metallic bond zygonema 6 and at least one second son, covers copper layer and be electrically connected, and one of them second son covers copper layer and is electrically connected with collector electrode 803.It should be noted that, in fact the second son described herein covers copper layer can comprise that a son covers copper layer, can also comprise that a plurality of sons cover copper layer.Connected mode described above also can be understood as: the first son covers copper layer and the second son and covers one or more sons in copper layer and cover copper layer and couple together directly or indirectly by metallic bond zygonema, and covers with the first son collector electrode 803 electrical connections that at least one height that copper layer directly or indirectly couples together by metallic bond zygonema covers copper layer and electrode power terminal.At this, realize in the mode of electrical connection, the effect that the second son covers copper layer is equivalent to wire, like this, the negative electrode of the collector electrode of igbt chip and FRD chip covers by metallic bond zygonema, the first son the collector electrode that copper layer and one or more the second son cover copper layer and electrode power terminal and realizes electrical connection.
Identical with the mode of collector electrode 803 electrical connections of electrode power terminal 80 with the collector electrode of igbt chip and the negative electrode of FRD chip, the mode of emitter 804 electrical connections of the anode of the emitter of described igbt chip and FRD chip and electrode power terminal 80 also can comprise following two kinds: the first connected mode is, the anode of the emitter of described igbt chip and FRD chip is connected to the 3rd son by metallic bond zygonema 6 and covers on copper layer, and described the 3rd son covers the emitter electrical connection of copper layer and electrode power terminal; The second connected mode is, first the emitter of igbt chip is electrically connected by metallic bond zygonema 6 and the anode of FRD chip, then by metallic bond zygonema 6, covering copper layer with at least one the 3rd son is connected, wherein, at least one the 3rd son being connected with this metallic bond zygonema covers the emitter electrical connection of copper layer and electrode power terminal.Be readily appreciated that, in the second connected mode, the 3rd son covers copper layer also can comprise that a plurality of sons cover copper layer, and the effect that the 3rd son covers copper layer is equivalent to wire, by the 3rd son, covers copper layer and directly or indirectly the emitter of the anode of the emitter of igbt chip and FRD chip and electrode power terminal is realized to electrical connection.
Because the collector electrode 803 of electrode power terminal 80 is sandwich construction, in this sandwich construction, every layer of battery lead plate all can be used as a sub-electrode layer of the collector electrode 803 of electrode power terminal 80, chip, as long as be electrically connected with one of them sub-electrode layer, has just been realized electrical connection with the collector electrode 803 of electrode power terminal 80.Like this, be positioned at a sub-electrode layer near chip on the chip of power terminal both sides and electrode power terminal 80 and realize electrical connection.So the structure of kind electrode power terminal 80 can make electric interconnection more for convenience, can eliminate the conventional power terminal complicated problem that cannot interconnect or interconnect, and make designer can design neatly lining plate structure.
In this embodiment, at least one igbt chip and/or at least one FRD chip to and the electrode layer of the electrode power terminal of its electrical connection between current path be the path of near linear, specifically, take igbt chip as example, the collector electrode of at least one igbt chip is the path of near linear to the current path of the leg of the collector electrode 803 of the electrode power terminal 80 with its electrical connection, or, the emitter of at least one igbt chip is the path of near linear to the current path of the leg of the emitter 804 with its electrical connection, can make like this current path the shortest, be conducive to reduce stray inductance.
Fig. 8 (1) is the liner plate current loop schematic diagram of the module that provides of the present embodiment, and arrow represents sense of current.The current loop that electric current forms between electrode power terminal and liner plate is specially: from the collector electrode 803 of electrode power terminal, flow into, the first leg through different collector electrodes 803, flow through be connected with collector electrode 803 cover copper layer, flow into equably the collector electrode of corresponding igbt chip, from being connected to the metal bonding linear flow of igbt chip emitter, go out again, what flow to that metallic bond zygonema is electrically connected covers copper layer, through the emitter of electrode power terminal, flows out.The collector electrode 803 of electrode power terminal and the current opposite in direction of emitter 804, and the current loop of each chip is all perpendicular to liner plate surface.
Fig. 8 (2) is a current loop end view on chip, from Fig. 8 (2), find out, each current loop by metallic bond zygonema d1 section, 2 sections of the thickness d of chip own, cover copper layer d3 section, power terminal d4 section forms.From Fig. 8 (2), can find out, the plane at the current circuit place that current loop d1～d4 section of at least one chip in the insulated gate bipolar thyristor module of the present embodiment forms is perpendicular to liner plate surface.Compare with conventional liner plate circuit layout (current circuit of formation is parallel to liner plate surface), the area that the current circuit of the present embodiment encloses is less, is only the thickness of chip or the height of bonding line, can reduce the stray inductance of module.
If igbt chip is symmetrically distributed in the both sides of electrode power terminal, the formed current circuit of each igbt chip equates so, be the height of metallic bond zygonema, if igbt chip emitter surface bonding has N root metallic bond zygonema, the stray inductance of each igbt chip is only the 1/N in loop that single bonding line forms.For example, the igbt chip in the present embodiment is symmetrically distributed in the both sides of electrode power terminal, and the current circuit of each igbt chip is consistent, is so also conducive to reduce stray inductance.The liner plate in Fig. 7 of take is example, is welded with 4 igbt chips on liner plate, 2 FRD chips, and two of electrode power terminal is surveyed respectively 2 igbt chips and 1 FRD chip, and position is symmetrical about the centerline axis of the Multilayer Structure of electrode power terminal.The current loop of igbt chip 401 is L1 ', and its loop stray inductance is l1 ', and 402 current loop is L2 ', its loop stray inductance is l2 ', and 403 current loop is L3 ', and its loop stray inductance is l3 ', 404 current loop is L4 ', and its loop stray inductance is l4 '.4 igbt chips are in parallel on circuit, and total inductance can simply be expressed as:
lIGBT’=l1’||l2’||l3’||l4’；
Liner plate circuit layout of the present invention, can be similar to and think that four current loops are all the same, so
L’IGBT≈l3’/4；
As from the foregoing, the total inductance of this layout equal each current loop stray inductance 1/4.Compared to conventional liner plate layout (as shown in Fig. 6 (1)), the stray inductance that the liner plate layout that the embodiment of the present invention provides produces is less.
Chip layout on liner plate described in above-described embodiment distributes axisymmetricly about the center line of the Multilayer Structure of electrode power terminal, this layout is the preferred version of the present embodiment, in fact, chip on liner plate comprises that igbt chip and FRD chip can be positioned at the both sides of electrode power terminal, can also be as shown in Figure 9, the chip on same liner plate comprises that igbt chip and FRD chip can also all be positioned at the same side of electrode power terminal.
In addition, be readily appreciated that, the embodiment of the present invention does not limit the number of liner plate, igbt chip and FRD chip, as long as insulated gate bipolar thyristor module at least comprises a liner plate, on each liner plate, be provided with the inventive concept that at least one igbt chip and FRD chip can be realized the embodiment of the present invention.
The electrode power terminal providing based on above-described embodiment one and embodiment bis-and new liner plate layout embodiment, the embodiment of the present invention three also provides the embodiment of the insulated gate bipolar thyristor module of low stray inductance.The circuit of this insulated gate bipolar thyristor is single switching circuit, and this circuit diagram as shown in figure 10.
The circuit structure of the insulated gate bipolar thyristor module described in embodiment tri-is single switching circuit structure, and in fact, the circuit structure of insulated gate bipolar thyristor module provided by the invention can also be half-bridge circuit structure.In detail referring to embodiment tetra-and embodiment five.
Embodiment tetra-
Embodiment tetra-is only that modular circuit structure is different with embodiment tri-, and the connected mode of its liner plate layout and electrode power terminal and chip on liner plate and embodiment's tri-is identical.For the sake of brevity, the present embodiment only focuses on to describe in detail to its difference.
In conjunction with Figure 11 and Figure 12, embodiment tetra-is described in detail.Figure 11 is the liner plate schematic layout pattern of embodiment tetra-, and Figure 12 is the electrical block diagram of the present embodiment.In half-bridge circuit, there are direct current positive electrode, direct current negative electrode and exchange output stage.So electrode power terminal can adopt compound three electrode power terminals described in above-described embodiment two.Wherein, the first electrode is as direct current positive electrode 805, the second electrode as direct current negative electrode 806, and third electrode is as exchanging output stage 807.
In this module, at least comprise two igbt chips and at least two FRD chips.Wherein, at least one igbt chip and at least one FRD chip form first brachium pontis, and other at least one igbt chip and at least one FRD chip form second brachium pontis.
In this module, half brachium pontis can be realized with a liner plate up and down, also can realize with a plurality of liner plates.The liner plate of now take is realized half-bridge circuit as example.
Form the collector electrode of igbt chip and the negative electrode of FRD chip and 805 electrical connections of direct current positive electrode of first brachium pontis, the emitter of igbt chip and the anode of FRD chip that form first brachium pontis are electrically connected with the output stage 807 that exchanges of electrode power terminal;
The collector electrode of igbt chip and the negative electrode of FRD chip that form second brachium pontis are electrically connected with the output stage 807 that exchanges of electrode power terminal, form the emitter of igbt chip and the anode of FRD chip and 806 electrical connections of direct current negative electrode of second brachium pontis.
In this module, at least one igbt chip and/or at least one FRD chip to and the electrode power terminal of its electrical connection between current path be approximate path of realizing, the current loop between at least one electrode power terminal and liner plate is perpendicular to liner plate surface.
Similar with the insulated gate bipolar thyristor module described in embodiment tri-, the position of igbt chip on liner plate can be positioned at the both sides of described electrode power terminal, and/or the position of FRD chip on liner plate is positioned at the both sides of electrode power terminal.Certainly, igbt chip and FRD chip also can be positioned at the same side of electrode power terminal.When igbt chip and/or FRD chip are positioned at the both sides of electrode power terminal, further preferred, igbt chip and/or FRD chip distribute axisymmetricly about the center line of the Multilayer Structure of electrode power terminal.Equally, electrode power terminal can be positioned at close middle region on liner plate, also can be positioned at the region near an edge on liner plate.
In the present embodiment, the specific implementation of collector electrode 803 electrical connections of the collector electrode of igbt chip in the negative electrode of the collector electrode of the igbt chip of first brachium pontis and FRD chip and 805 electrical connections of the direct current positive electrode of electrode power terminal and embodiment tri-and the negative electrode of FRD chip and electrode power terminal is basic identical.Be specifically as follows:
The collector electrode of igbt chip of described first brachium pontis of composition and the negative electrode of FRD chip are connected to the first son and cover on copper layer, and described the first son covers direct current positive electrode 805 electrical connections of copper layer and electrode power terminal; Or, the collector electrode of igbt chip of described first brachium pontis of composition and the negative electrode of FRD chip are connected to the second son by metallic bond zygonema and cover on copper layer, the second son covers copper layer and by metallic bond zygonema and at least one the first son, covers copper layer and be electrically connected, and covers at least one first son that copper layer is connected by metallic bond zygonema cover copper layer and 805 electrical connections of described direct current positive electrode with the second son.
Based on same design, the emitter of igbt chip and the anode of FRD chip that form first brachium pontis are electrically connected with the output stage 807 that exchanges of electrode power terminal, be specifically as follows: the emitter of igbt chip of described first brachium pontis of composition and the anode of FRD chip are connected to the 3rd son by metallic bond zygonema and cover copper layer, described the 3rd son covers copper layer and is electrically connected with the output stage 807 that exchanges on described electrode power terminal; Or, the emitter of igbt chip of described first brachium pontis of composition and the anode of FRD chip are first connected to the 4th son by metallic bond zygonema and cover copper layer, the 4th son covers copper layer and by metallic bond zygonema and at least one the 3rd son, covers copper layer and be electrically connected, and covers at least one the 3rd son that copper layer is connected by metallic bond zygonema cover copper layer and exchange output stage 807 electrical connections on described electrode power terminal with the 4th son.
The collector electrode of igbt chip and the negative electrode of FRD chip that form second brachium pontis are electrically connected with the output stage that exchanges of electrode power terminal, be specifically as follows, the collector electrode of igbt chip of described second brachium pontis of composition and the negative electrode of FRD chip are connected to the 5th son and cover on copper layer, and described the 5th son covers copper layer and is electrically connected with the output stage 807 that exchanges on described liner plate; Or, the collector electrode of igbt chip of described second brachium pontis of composition and the negative electrode of FRD chip are connected to the 6th son by metallic bond zygonema and cover copper layer, the 6th son covers copper layer and by metallic bond zygonema and at least one the 5th son, covers copper layer and be electrically connected, and covers at least one the 5th son that copper layer is connected by metallic bond zygonema cover copper layer and exchange output stage 807 electrical connections on described electrode power terminal with the 6th son.
Form the emitter of igbt chip and the anode of FRD chip and the electrical connection of direct current negative electrode of second brachium pontis, be specifically as follows, the emitter of igbt chip of described second brachium pontis of composition and the anode of FRD chip are connected to the 7th son by metallic bond zygonema and cover on copper layer, described the 7th son covers copper layer and 806 electrical connections of described direct current negative electrode, or, the emitter of igbt chip of described second brachium pontis of composition and the anode of FRD chip are first connected to the 8th son by metallic bond zygonema and cover copper layer, the 8th son covers copper layer and by metallic bond zygonema and at least one the 7th son, covers copper layer and be electrically connected, at least one the 7th son that covers the electrical connection of copper layer with the 8th son covers copper layer and 806 electrical connections of described direct current negative electrode.
When the circuit of module is half-bridge circuit, can also be arranged on liner plate exchanging output stage 807, other electrode can adopt the electrode layer on electrode power terminal as direct current positive electrode and direct current negative electrode.In detail referring to embodiment five.
Embodiment five
In conjunction with Figure 13, the insulated gate bipolar thyristor module described in embodiment five is described in detail.Embodiment five and embodiment tetra-have many similarities, its difference is only that the present embodiment adopts the multi-layered electrode power terminal in embodiment 1, it exchanges output stage 807 and does not integrate with direct current positive electrode 805 and direct current negative electrode 806, but a predetermined son on the liner plate of module covers on copper layer and is provided with and exchanges output stage 807.This pre-stator covers copper layer and is electrically connected by the emitter of the igbt chip of metallic bond zygonema and first brachium pontis and the anode of FRD chip, and the while is also electrically connected by the collector electrode of igbt chip and the negative electrode of FRD chip of metallic bond zygonema or direct and second brachium pontis.
It should be noted that, in the present embodiment, owing to exchanging output stage, be positioned on liner plate, the electric current of the module of flowing through can, around to exchanging on output stage, make the current loop of insulated gate bipolar thyristor module in the present embodiment not exclusively perpendicular to liner plate surface.
Insulated gate bipolar thyristor module based on described in embodiment tetra-and embodiment five, insulated gate bipolar thyristor module provided by the invention can also be three-phase inverter module.This module can be comprised of three half-bridge circuits as described in embodiment tetra-or embodiment five.In detail referring to embodiment six.
Embodiment six
Referring to Figure 14.Three-phase inverter module shown in Figure 14 is to combine at the half-bridge circuit described in embodiment five.In fact, the three-phase inverter module that the embodiment of the present invention provides can also combine by the half-bridge circuit based on described in embodiment tetra-.The circuit structure of this three-phase inverter module can be specially two kinds of structures.A kind of, be that three half-bridge circuits do not couple together, the circuit structure as shown in Figure 15 (1).In this circuit structure, an electrode power terminal connects a liner plate, forms a half-bridge circuit structure.In this circuit structure, comprise three half-bridge circuits, so need three independently electrode power terminals.Another structure is that, as shown in Figure 15 (2), three multi-layered electrode power terminals corresponding to half-bridge circuit are integrated into a multi-layered electrode power terminal.Particularly, the direct current positive electrode of three half-bridge circuits links together, direct current negative electrode links together, and exchange output stage, still keeps independently state.Same, this embodiment also can adopt the multi-layered electrode power terminal in embodiment 2, and particularly, the direct current positive electrode of three half-bridge circuits links together, direct current negative electrode links together, and exchange output stage, still keeps independently state.
Be to be understood that, although this specification is described according to execution mode, but not each execution mode only comprises an independently technical scheme, this narrating mode of specification is only for clarity sake, those skilled in the art should make specification as a whole, technical scheme in each execution mode also can, through appropriately combined, form other execution mode it will be appreciated by those skilled in the art that.
Listed a series of detailed description is above only illustrating for feasibility execution mode of the present invention; they are not in order to limit the scope of the invention, all disengaging within equivalent execution mode that skill spirit of the present invention does or change all should be included in protection scope of the present invention.

Claims (16)

1. an electrode power terminal, it is characterized in that, at least comprise, the first electrode and the second electrode, described the first electrode and described the second electrode consist of a multi-layer sheet, described multi-layer sheet comprises N layer battery lead plate, between adjacent two layers battery lead plate, be provided with insulation board, wherein, between M layer battery lead plate, by least one first through hole, realize electrical connection and form described the first electrode, and the first through hole and the equal electric insulation of each battery lead plate except described M layer battery lead plate described in each, at least one deck battery lead plate except described M layer battery lead plate forms described the second electrode;
Wherein, M >=2, N >=3, N>M, M, N are natural number.
2. electrode power terminal according to claim 1, it is characterized in that, described battery lead plate except described M layer battery lead plate at least comprises two-layer, described at least one deck battery lead plate except described M layer battery lead plate forms the second electrode of described electrode power terminal, be specially, each battery lead plate except described M layer battery lead plate is realized electrical connection by least one second through hole and is formed described the second electrode, and the equal electric insulation of each battery lead plate of described the second through hole and described M layer battery lead plate.
3. electrode power terminal according to claim 1, it is characterized in that, also comprise third electrode, described battery lead plate except described M layer battery lead plate at least comprises two-layer, described battery lead plate except described M layer battery lead plate comprises first and second portion, wherein, the battery lead plate of described first forms described the second electrode, and the battery lead plate of described second portion forms described third electrode.
4. electrode power terminal according to claim 3, is characterized in that, described first at least comprises two-layer battery lead plate, and the battery lead plate of described first is realized electrical connection by least one second through hole and formed described the second electrode.
5. according to the electrode power terminal described in claim 3 or 4, it is characterized in that, described second portion at least comprises two-layer battery lead plate, and the battery lead plate of described second portion is realized electrical connection by least one third through-hole and formed described third electrode.
6. an insulated gate bipolar thyristor module, it is characterized in that, comprise, at least one liner plate, be positioned at least one igbt chip, at least one FRD chip and electrode power terminal on described liner plate, described electrode power terminal adopts the electrode power terminal described in claim 1-5 any one, and described the first electrode is collector electrode, and described the second electrode is emitter;
The collector electrode electrical connection of the negative electrode of the collector electrode of described igbt chip and described FRD chip and described electrode power terminal, the anode of the emitter of described igbt chip and FRD chip and the electrical connection of the emitter of described electrode power terminal;
Wherein, at least one igbt chip and/or at least one FRD chip to and the described electrode power terminal of its electrical connection between current path be the path of near linear, at least one current loop forming between described electrode power terminal and described liner plate is perpendicular to described liner plate.
7. module according to claim 6, it is characterized in that, on same described liner plate, described electrode power terminal is positioned on described liner plate center line, on described liner plate, be provided with at least two igbt chips and at least two FRD chips, the position of described igbt chip on described liner plate is symmetrical about the centerline axis of described liner plate, and/or the position of described FRD chip on described liner plate is symmetrical about the centerline axis of described liner plate.
8. module according to claim 6, is characterized in that, on same described liner plate, described igbt chip and FRD chip are positioned at the same side of described electrode power terminal.
9. an insulated gate bipolar thyristor module, it is characterized in that, comprise at least one liner plate, be positioned at least two igbt chips on described liner plate, at least two FRD chips and electrode power terminal, described electrode power terminal adopts the electrode power terminal described in claim 3-5 any one, described the first electrode is direct current positive electrode, and described the second electrode is for exchanging output stage, and described third electrode is direct current negative electrode;
Described modular circuit is half-bridge circuit, and wherein, at least one igbt chip and at least one FRD chip form first brachium pontis, and other at least one igbt chip and other at least one FRD chip form second brachium pontis;
The collector electrode of igbt chip of described first brachium pontis of composition and the negative electrode of FRD chip and the electrical connection of described direct current positive electrode, the emitter of igbt chip and the anode of FRD chip that form described first brachium pontis are electrically connected with the output stage that exchanges of described electrode power terminal;
The collector electrode of igbt chip and the negative electrode of FRD chip that form described second brachium pontis are electrically connected with the output stage that exchanges of described electrode power terminal, form the emitter of igbt chip and the anode of FRD chip and the electrical connection of described direct current negative electrode of described second brachium pontis;
Wherein, at least one igbt chip and/or at least one FRD chip to and the described electrode power terminal of its electrical connection between current path be the path of near linear, at least one current loop forming between described electrode power terminal and described liner plate is perpendicular to described liner plate.
10. module according to claim 9, it is characterized in that, on same described liner plate, be provided with at least two igbt chips and at least two FRD chips, described electrode power terminal is positioned on described liner plate center line, described igbt chip is positioned at the both sides of described electrode power terminal, and/or described FRD chip is positioned at the both sides of described electrode power terminal.
11. modules according to claim 9, is characterized in that, on same described liner plate, described igbt chip and FRD chip are positioned at the same side of described electrode power terminal.
12. 1 kinds of insulated gate bipolar thyristor modules, it is characterized in that, comprise at least one liner plate, be positioned at least two igbt chips on described liner plate, at least two FRD chips and electrode power terminal, on described liner plate, be also provided with interchange output stage, described electrode power terminal adopts the electrode power terminal described in claim 1-5 any one, and described the first electrode is direct current positive electrode, and described the second electrode is direct current negative electrode;
Described modular circuit is half-bridge circuit, and wherein, at least one igbt chip and at least one FRD chip form first brachium pontis, and other at least one igbt chip and other at least one FRD chip form second brachium pontis;
The described collector electrode of igbt chip of first brachium pontis of composition and the electrical connection of the direct current positive electrode of the negative electrode of FRD chip and described electrode power terminal, the emitter of igbt chip and the anode of FRD chip that form described first brachium pontis are electrically connected with the output stage that exchanges on described liner plate;
The collector electrode of igbt chip and the negative electrode of FRD chip that form described second brachium pontis are electrically connected with the output stage that exchanges on described liner plate, form the described emitter of igbt chip of second brachium pontis and the electrical connection of the direct current negative electrode of the anode of FRD chip and described electrode power terminal;
Wherein, at least one igbt chip and/or at least one FRD chip to and the described electrode power terminal of its electrical connection between current path be the path of near linear.
13. modules according to claim 12, it is characterized in that, on same described liner plate, be provided with at least two igbt chips and at least two FRD chips, described electrode power terminal is positioned on described liner plate center line, the position of described igbt chip on described liner plate is symmetrical about the centerline axis of described liner plate, and/or the position of described FRD chip on described liner plate is symmetrical about the centerline axis of described liner plate.
14. modules according to claim 11, is characterized in that, on same described liner plate, described igbt chip and FRD chip are positioned at the same side of described electrode power terminal.
15. 1 kinds of insulated gate bipolar thyristor modules, is characterized in that, described modular circuit is three-phase inverter circuitry, and described three-phase inverter circuitry is comprised of three half-bridge circuits described in claim 9-14 any one.
16. modules according to claim 15, it is characterized in that, described in each, the negative electrode of the collector electrode of the igbt chip of first brachium pontis of half-bridge circuit and FRD chip links together, described in each together with the anodic bonding of the emitter of the igbt chip of second brachium pontis of half-bridge circuit and FRD chip.
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CN103811441A (en) * 2014-02-26 2014-05-21 西安永电电气有限责任公司 Contact electrode structure for flat-plate crimped IGBT (Insulated Gate Bipolar Translator) module
CN105957859A (en) * 2014-12-24 2016-09-21 株式会社日立功率半导体 Semiconductor power module and power conversion apparatus using the same
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CN105957860B (en) * 2016-05-03 2018-07-20 扬州国扬电子有限公司 A kind of power module equipped with insulating barrier
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WO2019041292A1 (en) * 2017-08-30 2019-03-07 扬州国扬电子有限公司 Parallel electrode combination, power module and power module group
CN107634051A (en) * 2017-08-30 2018-01-26 扬州国扬电子有限公司 A kind of power modules with cross arrangement electrode combination
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CN107731768A (en) * 2017-09-08 2018-02-23 全球能源互联网研究院有限公司 A kind of IGBT module encapsulating structure
CN107731768B (en) * 2017-09-08 2019-11-15 全球能源互联网研究院有限公司 An IGBT module package structure
CN112750803A (en) * 2019-10-31 2021-05-04 株洲中车时代电气股份有限公司 Busbar terminal and IGBT power module
JPWO2022176675A1 (en) * 2021-02-16 2022-08-25
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