CN103594411A - Formation method of silicon germanium on insulator - Google Patents
Formation method of silicon germanium on insulator Download PDFInfo
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- CN103594411A CN103594411A CN201210287340.8A CN201210287340A CN103594411A CN 103594411 A CN103594411 A CN 103594411A CN 201210287340 A CN201210287340 A CN 201210287340A CN 103594411 A CN103594411 A CN 103594411A
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- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title claims abstract description 107
- 238000000034 method Methods 0.000 title claims abstract description 77
- 239000012212 insulator Substances 0.000 title claims abstract description 55
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 35
- 229910000577 Silicon-germanium Inorganic materials 0.000 title abstract 11
- 239000000758 substrate Substances 0.000 claims abstract description 139
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 58
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 58
- 238000005530 etching Methods 0.000 claims abstract description 18
- 239000012459 cleaning agent Substances 0.000 claims abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 62
- 229910052710 silicon Inorganic materials 0.000 claims description 62
- 239000010703 silicon Substances 0.000 claims description 62
- 230000004888 barrier function Effects 0.000 claims description 40
- 238000010438 heat treatment Methods 0.000 claims description 18
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 16
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims description 15
- 238000001039 wet etching Methods 0.000 claims description 13
- 150000002500 ions Chemical group 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 238000005520 cutting process Methods 0.000 claims description 9
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 239000002210 silicon-based material Substances 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 238000003701 mechanical milling Methods 0.000 claims description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000005728 strengthening Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 238000009413 insulation Methods 0.000 abstract description 6
- 238000004140 cleaning Methods 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- -1 oxonium ion Chemical class 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02096—Cleaning only mechanical cleaning
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Abstract
A formation method of silicon germanium on insulator comprises the following steps: providing a first substrate and a second substrate, wherein the first substrate is formed with an insulation layer and the second substrate is formed with a silicon germanium layer; combining the insulation layer and the silicon germanium layer so as to enable the first substrate and the second substrate to be combined into an integrated body; removing the second substrate; and after the second substrate is removed, cleaning the surface of the silicon germanium layer so as to remove the residues of the second substrate on the surface of the silicon germanium layer by utilizing a cleaning agent which has a high etching selectivity ratio on the second substrate and the silicon germanium layer. The formation method of silicon germanium on insulator is capable of improving the content of the germanium in the silicon germanium layer, so that carrier mobility is then improved; and the upper surface of the silicon germanium on insulator which is formed by utilizing the formation method of silicon germanium on insulator has better flatness, so that the performance of a semiconductor device is not influenced.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly a kind of formation method of germanium on insulator silicon.
Background technology
Utilize the chip of silicon-on-insulator manufacture to be comprised of containing transistorized insulation layer millions of, each insulation layer isolates mutually with other insulation layer and the build substrate silicon substrate under it, and this feature has greatly been simplified the design of circuit.That is to say, designer is without designing complicated circuit arrangement in order to realize the electric insulation of reverse biased junction point.In addition, the insulating barrier in silicon-on-insulator also can be protected movable silicon layer parasitic on top silicon layer and body silicon substrate.Due to These characteristics, silicon-on-insulator has been widely used in semi-conductive manufacture process.
At present, in order to improve carrier mobility, germanium on insulator silicon starts to be used as substrate.The manufacture method of traditional germanium on insulator silicon comprises: silicon substrate is provided; By epitaxial growth, on described silicon substrate, form germanium silicon layer; Described germanium silicon layer is carried out to oxonium ion doping, and described oxonium ion infiltrates the desired depth of described germanium silicon layer; And by high annealing, make the silicon in the described germanium silicon layer of described oxonium ion and its place depth react generation insulating layer of silicon oxide.Yet, in said method, in described germanium silicon layer, the content of germanium is higher, the lattice defect that described high annealing causes described germanium silicon layer to produce is just more serious, therefore, in order to reduce described lattice defect, in described germanium silicon layer, the content of germanium also requires to limit to some extent, but this also will be restricted the carrier mobility of described germanium silicon layer.
In order to make the content of germanium in germanium silicon layer unrestricted, in the prior art, adopt smart-cut technique (smart cut) to make germanium on insulator silicon.The United States Patent (USP) that is for example on open on April 30th, 2009 and publication number are US2009/0111248A1 discloses the method for another kind of making germanium on insulator silicon.The method of described making germanium on insulator silicon comprises: the first substrate and the second silicon substrate are provided, on described the first silicon substrate, are formed with insulating barrier; On described the second silicon substrate, be epitaxially grown to germanium silicon layer; By described the second silicon substrate upset; The insulating barrier of the germanium silicon layer of the second silicon substrate of described upset and described the first silicon substrate is bonding; And remove described the second silicon substrate by smart-cut (smart cut).But, utilize the formed germanium on insulator silicon of said method to make the threshold voltage of follow-up formed device unstable.
Therefore, need to propose a kind of formation method of new germanium on insulator silicon, not only can improve the content of germanium in germanium on insulator silicon, and can make the threshold voltage of follow-up formed device stable.
Summary of the invention
The technical problem to be solved in the present invention is to improve the content of germanium in germanium on insulator silicon, and improves the performance of utilizing the formed semiconductor device of germanium on insulator silicon.
For addressing the above problem, the embodiment of the present invention provides a kind of formation method of germanium on insulator silicon, comprising: the first substrate and the second substrate are provided, on described the first substrate, are formed with insulating barrier, on described the second substrate, be formed with germanium silicon layer; In conjunction with described insulating barrier and described germanium silicon layer, make described the first substrate and described the second substrate structure that is combined into one; Remove described the second substrate; Remove after described the second substrate, employing has the cleaning agent of high etching selection ratio to described the second substrate and described germanium silicon layer, the surface of described germanium silicon layer is cleaned, and removes the second substrate residue of described germanium silicon surface.
Alternatively, the technique that the surface of described germanium silicon layer is cleaned is wet-etching technology, and the etching agent that described wet-etching technology adopts is ammoniacal liquor or tetramethyl ammonium hydroxide solution, and the temperature of described wet-etching technology is 20 ℃ to 90 ℃.
Alternatively, the method for removing described the second substrate is ion cutting technique.
Alternatively, described ion cutting technique comprises: before in conjunction with described insulating barrier and described germanium silicon layer, described the second substrate is carried out to hydrogen ion doped, at described the second substrate, near described germanium silicon layer one side, form hydrogen ion doped layer; After in conjunction with described insulating barrier and described germanium silicon layer, carry out the first heat treatment, described the first heat treatment is carried out in the atmosphere of not reacting with the first substrate and the second substrate, makes described the second substrate separated with described germanium silicon layer; Then, remove the second substrate.
Alternatively, described the first heat treated temperature is 300 ℃ to 500 ℃.
Alternatively, described the first heat treated atmosphere is nitrogen or helium.
Alternatively, the method for removing described the second substrate is chemical mechanical milling tech.
Alternatively, before in conjunction with described germanium silicon layer and insulating barrier, the formation method of described germanium on insulator silicon also comprises: on described germanium silicon layer, epitaxial growth forms silicon material layer.
Alternatively, after removing described the second substrate, the surface of described germanium silicon layer is cleaned before, the formation method of described germanium on insulator silicon also comprises: the first substrate after described combination, germanium silicon layer and insulating barrier are carried out to the second heat treatment, described the second heat treatment is for strengthening the bond strength between described germanium silicon layer and described insulating barrier, and described the second heat treated atmosphere is oxidizing gas.
Alternatively, described the second heat treated temperature is 600 ~ 1100 ℃.
Alternatively, described the second heat treated atmosphere is nitrogen.
Alternatively, the technique in conjunction with described insulating barrier and described germanium silicon layer is adhesion technique.
Alternatively, the temperature of described adhesion technique is 80 to 200 ℃, and applied pressure is 0.1 to 10N/cm2, and the dwell time is 2 to 8 hours.
Alternatively, the formation method of described germanium silicon layer is epitaxial growth technology.
Alternatively, in described germanium silicon layer the mole percent level of germanium for being more than or equal to 30%.
Alternatively, the formation method of described insulating barrier comprises: depositing insulating layer on described the first substrate, or described in thermal oxidation the first substrate to form insulating barrier.
Compared with prior art, embodiments of the invention have the following advantages:
In an embodiment of the present invention, first substrate with insulating barrier is combined with second substrate with germanium silicon layer, then remove the second substrate; Then, employing has the cleaning agent of high etching selection ratio to described the second substrate and described germanium silicon layer, the surface of described germanium silicon layer is cleaned, and removes the residue of the second substrate of described germanium silicon surface.Because the surface flatness of the germanium on insulator silicon of having removed the residue of the second substrate so having made to form is better, thereby make to utilize the threshold voltage of the formed device of described germanium on insulator silicon to there is good stability.
In specific embodiment, the technique of removing the residue of the second substrate on described germanium silicon layer can be wet-etching technology, the etching agent adopting is ammoniacal liquor or tetramethyl ammonium hydroxide solution, described ammoniacal liquor or tetramethyl ammonium hydroxide solution can improve the etching selection ratio between described the second substrate and described germanium silicon layer, thereby can remove preferably the second residual substrate, and guarantee formed germanium on insulator silicon upper surface there is better flatness, thereby do not affect the performance of formed semiconductor device.
In addition, residual very thin due to described the second substrate, in embodiments of the present invention, the temperature setting of removing the solution that the residual wet-etching technology of described the second substrate adopts is set to approximately 20 ℃ to 90 ℃, too fast to prevent etching speed, thereby reaches meticulous control.
Accompanying drawing explanation
Fig. 1 is the flow chart of formation method of the germanium on insulator silicon of one embodiment of the invention; And
Fig. 2 to Fig. 8 is the cross-sectional view of intermediate structure of formation method of the germanium on insulator silicon of one embodiment of the invention.
Embodiment
Through inventor, find, follow-up formed device threshold voltage unsettled former because: after removing described the second substrate, on the surface of described germanium silicon layer, be still coated with the residue of a little the second substrate, described residue makes the coarse injustice of the upper surface of formed germanium on insulator silicon, again because the threshold voltage of device is directly related with germanium silicon thickness, if the upper surface of germanium on insulator silicon is uneven, can cause the threshold voltage of follow-up formed device to occur difference.
For the problems referred to above, embodiments of the invention provide a kind of formation method of germanium on insulator silicon, and Fig. 1 is the flow chart of formation method of the germanium on insulator silicon of one embodiment of the invention.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.Set forth in the following description a lot of details so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here, implement, so the present invention has not been subject to the restriction of following public specific embodiment.
Lower mask body is in conjunction with Fig. 2 to Fig. 8, and the technical scheme that the embodiment of the present invention is provided is elaborated.
First, please refer to Fig. 2, execution step S1, provides the first substrate 101 and the second substrate 201, on described the first substrate 101, is formed with insulating barrier 102, on described the second substrate 201, is formed with germanium silicon layer 202.In embodiments of the present invention, described the first substrate 101 and described the second substrate 201 are all silicon substrate.
In an embodiment of the present invention, the material of described insulating barrier 102 is silica, silicon nitride, but be not limited to silica and silicon nitride.Described insulating barrier 102 can directly deposit and form on described the first substrate 101, also can be that the first substrate 101 forms described in thermal oxidation, without form insulating barrier by high annealing as prior art, thereby can not produce the lattice defect that high annealing brings to germanium silicon layer, and the content of germanium in described germanium silicon layer 202 is limited to some extent.In an embodiment of the present invention, in described germanium silicon layer 202, the mole percent level of germanium can be for being more than or equal to 30%, higher than the content of germanium in germanium silicon layer in prior art, thereby greatly improved carrier mobility.
In addition, described germanium silicon layer 202 forms by epitaxial growth technology, and the thickness of described germanium silicon layer is that about 5nm is to about 100nm.
Then, please refer to Fig. 3, execution step S2, in conjunction with described germanium silicon layer 202 and described insulating barrier 102, makes the first substrate 101 and the second substrate 201 form integrative-structure.In embodiments of the present invention, the technique of described combination germanium silicon layer 202 and insulating barrier 102 is adhesion technique, and the temperature of described adhesion technique is approximately 80 to 200 ℃, and applied pressure is approximately 0.1 to 10N/cm
2(ox/square centimeter), the dwell time is approximately 2 to 8 hours.In other embodiments of the invention, described combined process also can adopt other routine techniques means applicatory of knowing in this area.
Then, execution step S3, removes described the second substrate.In an embodiment of the present invention, the method for removing described the second substrate 201 is ion cutting technique.Described ion cutting technique comprises: please refer to Fig. 4, before bonding described germanium silicon layer 202 and insulating barrier 102, the second substrate 201 is carried out to hydrogen ion doped, and make described hydrogen ion infiltrate through described the second substrate 201, wherein in Fig. 4, position shown in dotted line has illustrated the degree of depth of hydrogen ion doped, but it should be noted that, signal effect is only played in the position of dotted line, the degree of depth of actual light ion doping is determined according to actual process conditions.In embodiments of the present invention, the dosage of described hydrogen ion doped is 1e15 to 1e17, and doping energy according to doping the degree of depth determine, be generally 10keV to 500KeV.After removing the second substrate, the second substrate residue on described germanium silicon layer is fewer for follow-up, and the degree of depth of described hydrogen ion doped is the smaller the better.
Described ion cutting technique also comprises: please refer to Fig. 5, after in conjunction with described germanium silicon layer 202 and described insulating barrier 102, described the second substrate is carried out to the first Technology for Heating Processing, described the first Technology for Heating Processing is for promoting the separation of described the second substrate.Specifically, to be hydrogen ion in order to make above-mentioned doping produce hydrogen gas bubbles (in Fig. 5, the position of dotted line illustrates that hydrogen ion produces the position of bubble) at the second substrate 201 near a side of germanium silicon layer 202 to described the first Technology for Heating Processing, thereby make the interior generation lattice defect of the second substrate 201, further make to produce and divide between described the second substrate 201 and described germanium silicon layer 202.In embodiments of the present invention, the temperature of described the first Technology for Heating Processing is approximately 300 ℃ to 500 ℃, and the atmosphere of described the first Technology for Heating Processing is the gas not reacting with described the first substrate and the second substrate, nitrogen for example, helium.
Described ion cutting technique also comprises: please continue to refer to Fig. 5, remove the second substrate 201.Due in described ion cutting technique, described hydrogen ion doped has certain degree of depth, so the position (as shown in phantom in Figure 5) that hydrogen ion produces hydrogen gas bubbles in described the first heat treatment has with a certain distance from the second substrate 201 and germanium silicon layer 202 interfaces.That is to say, described the second substrate 201 is not just in time from the interface with described germanium silicon layer 202 and described germanium silicon layer 202, to carry out separatedly, causes being still coated with on described germanium silicon layer the residue 201a of a little the second substrate 201.As previously mentioned, described residue 201a makes the upper surface of the last germanium on insulator silicon forming very inhomogeneous, thereby affects the performance of semiconductor device.
In other embodiments of the invention, the method of removing described the second substrate 201 can be also chemical mechanical milling tech, without hydrogen ion doped, directly by cmp, grind off the part that removed the second substrate 201 of described the second substrate 201(shows as the dotted line collimation mark in Fig. 6).Described chemical mechanical milling tech is those skilled in that art's the technological means of knowing, and is not repeated herein.
It should be noted that, as shown in Figure 6, adopt after chemical machine grinding technics removes described the second substrate 201, because grinding technics is difficult to control very accurately, on described germanium silicon layer 202, still may have equally the residue 201a of the second substrate 201.As previously mentioned, the coarse injustice of upper surface that described residue 201a causes formed germanium on insulator silicon, thus affect the performance of semiconductor device.Therefore, described residue should be removed.
After removing described the second substrate 201, the method of described formation germanium on insulator silicon can also comprise step: the first substrate after described combination, germanium silicon layer and insulating barrier are carried out to the second Technology for Heating Processing, and described the second Technology for Heating Processing is for strengthening the degree of adhesion between the first substrate, germanium silicon layer and insulating barrier.In embodiments of the present invention, described the second heat treated atmosphere is oxidizing gas, and described the second heat treated temperature is 600 ℃ to 1100 ℃.For example, when described the second heat treated atmosphere is nitrogen, described nitrogen is for grown silicon nitride layer (not shown) on described germanium silicon layer, described silicon nitride layer can be strengthened the combination between described germanium silicon layer 202 and insulating barrier 201, and the thickness of described silicon nitride layer can be for 1 nanometer be to 40 nanometers.Described the second heat treated temperature should not be too high, to prevent that described germanium silicon layer from forming defect.
In addition, please refer to Fig. 7, in order further to strengthen the degree of adhesion between the first substrate 101, germanium silicon layer 202 and insulating barrier 102, can also be after carrying out above-mentioned hydrogen ion doped, in conjunction with before described the first substrate and the second substrate, on described germanium silicon layer 202, epitaxial growth forms silicon material layer 203.Described silicon material layer 203 can be used for forming silicon oxide layer in described the second heat treatment, to further strengthen bonding between described germanium silicon layer 202 and insulating barrier 201.The thickness of described silicon material layer can be for 1nm be to 30nm.
Utilizing CMP technique to remove in the embodiment of the second substrate, also can by insulating barrier and germanium silicon layer in conjunction with before, on germanium silicon layer, epitaxial growth forms silicon material layer; When utilizing CMP technique to remove after the second substrate, utilize the second Technology for Heating Processing described above to strengthen the combination between described germanium silicon layer 202 and insulating barrier 201.
Then, please refer to Fig. 8, execution step S4, employing has the cleaning agent of high etching selection ratio to described the second substrate 201 and described germanium silicon layer 202, surface to described germanium silicon layer 202 is cleaned, and removes the residue 201a of second substrate 201 on described germanium silicon layer 202 surfaces.
In an embodiment of the present invention, the technique of removing the residue 201a of the second substrate on described germanium silicon layer 202 can be wet-etching technology, and the etching agent of employing is ammoniacal liquor or tetramethyl ammonium hydroxide solution, but is not limited to this two kinds of solution.The temperature of the solution that described wet-etching technology adopts should not be too high, too fast to prevent etching speed, bad control, for example approximately 20 ℃ to 90 ℃.
It should be noted that, in an embodiment of the present invention, described ammoniacal liquor or tetramethyl ammonium hydroxide solution have higher etching selection ratio to described the second substrate 201 and described germanium silicon layer 202, thereby can remove preferably the second residual substrate 201, and guarantee formed germanium on insulator silicon upper surface there is better flatness, in addition, the residual 201a of described the second substrate is very thin, the temperature of the solution that therefore described wet-etching technology adopts should not be too high, too fast to prevent etching speed, thus reach meticulous control.
In sum, embodiments of the invention have the following advantages:
In an embodiment of the present invention, first substrate with insulating barrier is combined with second substrate with germanium silicon layer, then remove the second substrate; Then, employing has the cleaning agent of high etching selection ratio to described the second substrate and described germanium silicon layer, the surface of described germanium silicon layer is cleaned, and removes the residue of the second substrate of described germanium silicon surface.Because the surface flatness of the germanium on insulator silicon of having removed the residue of the second substrate so having made to form is better, thereby make to utilize the threshold voltage of the formed device of described germanium on insulator silicon to there is good stability.
In specific embodiment, the technique of removing the residue of the second substrate on described germanium silicon layer can be wet-etching technology, the etching agent adopting is ammoniacal liquor or tetramethyl ammonium hydroxide solution, described ammoniacal liquor or tetramethyl ammonium hydroxide solution can improve the etching selection ratio between described the second substrate and described germanium silicon layer, thereby can remove preferably the second residual substrate, and guarantee formed germanium on insulator silicon upper surface there is better flatness, thereby do not affect the performance of formed semiconductor device.
In addition, residual very thin due to described the second substrate, in embodiments of the present invention, the temperature setting of removing the solution that the residual wet-etching technology of described the second substrate adopts is set to approximately 20 ℃ to 90 ℃, too fast to prevent etching speed, thereby reaches meticulous control.
The above, be only preferred embodiment of the present invention, not the present invention done to any pro forma restriction.Any those of ordinary skill in the art, do not departing from technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement to make many possible changes and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not depart from technical solution of the present invention,, all still belongs in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (16)
1. a formation method for germanium on insulator silicon, is characterized in that, comprising:
The first substrate and the second substrate are provided, on described the first substrate, are formed with insulating barrier, on described the second substrate, be formed with germanium silicon layer;
In conjunction with described insulating barrier and described germanium silicon layer, make described the first substrate and described the second substrate structure that is combined into one;
Remove described the second substrate;
Remove after described the second substrate, employing has the cleaning agent of high etching selection ratio to described the second substrate and described germanium silicon layer, the surface of described germanium silicon layer is cleaned, and removes the second substrate residue of described germanium silicon surface.
2. the formation method of germanium on insulator silicon as claimed in claim 1, it is characterized in that, the technique that the surface of described germanium silicon layer is cleaned is wet-etching technology, the etching agent that described wet-etching technology adopts is ammoniacal liquor or tetramethyl ammonium hydroxide solution, and the temperature of described wet-etching technology is 20 ℃ to 90 ℃.
3. the formation method of germanium on insulator silicon as claimed in claim 1, is characterized in that, the method for removing described the second substrate is ion cutting technique.
4. the formation method of germanium on insulator silicon as claimed in claim 3, it is characterized in that, described ion cutting technique comprises: before in conjunction with described insulating barrier and described germanium silicon layer, described the second substrate is carried out to hydrogen ion doped, at described the second substrate, near described germanium silicon layer one side, form hydrogen ion doped layer; After in conjunction with described insulating barrier and described germanium silicon layer, carry out the first heat treatment, described the first heat treatment is carried out in the atmosphere of not reacting with the first substrate and the second substrate, makes described the second substrate separated with described germanium silicon layer; Then, remove the second substrate.
5. the formation method of germanium on insulator silicon as claimed in claim 4, is characterized in that, described the first heat treated temperature is 300 ℃ to 500 ℃.
6. the formation method of germanium on insulator silicon as claimed in claim 4, is characterized in that, described the first heat treated atmosphere is nitrogen or helium.
7. the formation method of germanium on insulator silicon as claimed in claim 1, is characterized in that, the method for removing described the second substrate is chemical mechanical milling tech.
8. the formation method of germanium on insulator silicon as claimed in claim 1, is characterized in that, before in conjunction with described germanium silicon layer and insulating barrier, also comprises: on described germanium silicon layer, epitaxial growth forms silicon material layer.
9. the formation method of germanium on insulator silicon as claimed in claim 1, after removing described the second substrate, the surface of described germanium silicon layer is cleaned before, also comprise: the first substrate after described combination, germanium silicon layer and insulating barrier are carried out to the second heat treatment, described the second heat treatment is for strengthening the bond strength between described germanium silicon layer and described insulating barrier, and described the second heat treated atmosphere is oxidizing gas.
10. the formation method of germanium on insulator silicon as claimed in claim 9, is characterized in that, described the second heat treated temperature is 600 ℃ to 1100 ℃.
The formation method of 11. germanium on insulator silicon as claimed in claim 9, is characterized in that, described oxidizing gas is nitrogen.
The formation method of 12. germanium on insulator silicon as claimed in claim 1, is characterized in that, in conjunction with the technique of described insulating barrier and described germanium silicon layer, is adhesion technique.
The formation method of 13. germanium on insulator silicon as claimed in claim 12, is characterized in that, the temperature of described adhesion technique is 80 ℃ to 200 ℃, and applied pressure is 0.1 to 10N/cm
2, the dwell time is 2 to 8 hours.
The formation method of 14. germanium on insulator silicon as claimed in claim 1, is characterized in that, the formation method of described germanium silicon layer is epitaxial growth technology.
The formation method of 15. germanium on insulator silicon as claimed in claim 1, is characterized in that, in described germanium silicon layer, the mole percent level of germanium is for being more than or equal to 30%.
The formation method of 16. germanium on insulator silicon as claimed in claim 1, is characterized in that, the formation method of described insulating barrier comprises: depositing insulating layer on described the first substrate, or described in thermal oxidation the first substrate to form insulating barrier.
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