CN103595397B - Video frequency output filtering driver circuit structure - Google Patents
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- CN103595397B CN103595397B CN201210287669.4A CN201210287669A CN103595397B CN 103595397 B CN103595397 B CN 103595397B CN 201210287669 A CN201210287669 A CN 201210287669A CN 103595397 B CN103595397 B CN 103595397B
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Abstract
The present invention relates to a kind of video frequency output filtering driver circuit structure, belong to circuit structure technical field.This video frequency output filtering driver circuit structure includes comparison circuit, circuit of output terminal and negative-feedback circuit, and video signal incoming end connects described circuit of output terminal by described comparison circuit, and described negative-feedback circuit is connected to described circuit of output terminal.Adopting the video frequency output filtering driver of this circuit structure, it can utilize negative-feedback circuit balance output end electric current, thus being effectively improved quiescent current ICC, and then the stability of video image driving output is greatly improved.And the simple in construction of the video frequency output filtering driver circuit structure of the present invention, with low cost, range of application is also relatively broad.
Description
Technical field
The present invention relates to circuit structure technical field, particularly to driver circuit structure technical field, specifically refer to a kind of video frequency output filtering driver circuit structure.
Background technology
As it is shown in figure 1, be the circuit structure diagram of video filtering driver output end of the prior art.It will be seen from figure 1 that video filtering signal Signal by comparing output S1 and S2 two paths of signals afterwards with a reference signal Reg, S1, S2 control the upper PMOS of driver output end and the grid of lower NMOS tube respectively.And be the metal-oxide-semiconductor of L for ditch length, the voltage-current relation of transistor is:knFor process transconductance parameter, when saturation region,Therefore, the electric current of this video filtering driver output end is the output mos electric current to pipe P46 and N35.
This video filtering drives relatively simple for structure, but there is certain defect in this structure, namely when video filtering signal is determined, and owing to the concordance deviation of technique or signal transmission causes that video filtering drive output electric current is bigger than normal or less than normal, make whole chip quiescent current ICC abnormal, do not meet design specification.And pipe area compensated improve ICC performance by adjusting video drive outfan, effect is also inconspicuous, and secondly, outlet tube area is too small also can be impacted outlet tube ability.
Summary of the invention
It is an object of the invention to overcome above-mentioned shortcoming of the prior art, there is provided one by increasing negative feedback structure at video filtering driver output end, in order to balance output end electric current, and then it is effectively improved quiescent current ICC, improve video image and drive the stability of output, and simple in construction, with low cost, range of application relatively broad video frequency output filtering driver circuit structure.
In order to realize above-mentioned purpose, the video frequency output filtering driver circuit structure of the present invention has following composition:
This video frequency output filtering driver circuit structure includes comparison circuit and circuit of output terminal, video signal incoming end connects described circuit of output terminal by described comparison circuit, this circuit structure also includes negative-feedback circuit, and described negative-feedback circuit is connected to described circuit of output terminal.
In this video frequency output filtering driver circuit structure, described comparison circuit includes the first signal output part S1 and secondary signal outfan S2；Described circuit of output terminal includes a P type metal-oxide-semiconductor field effect transistor P46 and the first N-type metal-oxide-semiconductor field effect transistor N35；The first described signal output part S1 connects the grid of a described P type metal-oxide-semiconductor field effect transistor P46, and described secondary signal outfan S2 connects the grid of the first described N-type metal-oxide-semiconductor field effect transistor N35；The source electrode of a described P type metal-oxide-semiconductor field effect transistor P46 connects power supply；The source ground of the first described N-type metal-oxide-semiconductor field effect transistor N35；The drain electrode of a described P type metal-oxide-semiconductor field effect transistor P46 connects the drain electrode of the first described N-type metal-oxide-semiconductor field effect transistor N35 and forms the outfan of described video frequency output filtering driver circuit structure；Described negative-feedback circuit connects the first described signal output part S1 and secondary signal outfan S2, and is connected to the source electrode of a described P type metal-oxide-semiconductor field effect transistor P46 and the first N-type metal-oxide-semiconductor field effect transistor N35.
In this video frequency output filtering driver circuit structure, described negative-feedback circuit includes the 2nd P type metal-oxide-semiconductor field effect transistor P45, 3rd P type metal-oxide-semiconductor field effect transistor P51, 4th P type metal-oxide-semiconductor field effect transistor P54, second N-type metal-oxide-semiconductor field effect transistor N39, 3rd N-type metal-oxide-semiconductor field effect transistor N40, first audion T26, second audion T27, 3rd audion T28, 4th audion T29, 5th audion T30, 6th audion T31, first resistance R19, second resistance R20 and the three resistance R21, the source electrode of the 2nd described P type metal-oxide-semiconductor field effect transistor P45, the source electrode of the 3rd described P type metal-oxide-semiconductor field effect transistor P51, the colelctor electrode of the 3rd described audion T28, the colelctor electrode of the 5th described audion T30 and one end of the 3rd described resistance R21 are all connected with described power supply, the other end of the 3rd described resistance R21 connects the source electrode of the 4th described P type metal-oxide-semiconductor field effect transistor P54, and the drain electrode of the 2nd described P type metal-oxide-semiconductor field effect transistor P45 and the grid of the 4th described P type metal-oxide-semiconductor field effect transistor P54 are all connected with the first described signal output part S1；The drain and gate of the 3rd described P type metal-oxide-semiconductor field effect transistor P51 is connected with each other, and connects the grid of the 2nd described P type metal-oxide-semiconductor field effect transistor P45 and the colelctor electrode of the first described audion T26；The drain electrode of the 4th described P type metal-oxide-semiconductor field effect transistor P54 connects the described base stage of the 3rd audion T28, the base stage of the 5th audion T30 and the 6th described audion T31 colelctor electrode respectively；The 6th described audion T31 base stage connects the drain electrode of the described emitter stage of the 5th audion T30, the base stage of the 4th audion T29 and the 3rd described N-type metal-oxide-semiconductor field effect transistor N40 respectively；The emitter stage of the 3rd described audion T28 connects the drain electrode of the colelctor electrode of the 4th described audion T29, the base stage of the first described audion T26, the base stage of the second described audion T27 and the second described N-type metal-oxide-semiconductor field effect transistor N39 respectively；The grid of the second described N-type metal-oxide-semiconductor field effect transistor N39, the grid of the 3rd described N-type metal-oxide-semiconductor field effect transistor N40 and the colelctor electrode of the second described audion T27 are all connected with described secondary signal outfan S2；The equal ground connection of emitter stage of the described emitter stage of the first audion T26, the emitter stage of the second audion T27, the emitter stage of the 4th audion T29 and the 6th audion T31；The source electrode of the second described N-type metal-oxide-semiconductor field effect transistor N39 is by the first described resistance R19 ground connection；The source electrode of the 3rd described N-type metal-oxide-semiconductor field effect transistor N40 is by the second described resistance R20 ground connection.
In this video frequency output filtering driver circuit structure, the furrow width of a described P type metal-oxide-semiconductor field effect transistor P46 is 30um, and ditch length is 0.6um, and identity unit number m is 24；The furrow width of the first described N-type metal-oxide-semiconductor field effect transistor N35 is 45um, and ditch length is 0.6um, and identity unit number m is 24；The 2nd described P type metal-oxide-semiconductor field effect transistor P45 is identical with the 3rd described P type metal-oxide-semiconductor field effect transistor P51, is furrow width 10um, and the long 2um of ditch, identity unit number m is 3；The furrow width of the 4th described P type metal-oxide-semiconductor field effect transistor P54 is 10um, and ditch length is 0.6um, and identity unit number m is 2；The furrow width of the second described N-type metal-oxide-semiconductor field effect transistor N39 is 45um, and ditch length is 0.6um, and identity unit number m is 2；The furrow width of the 3rd described N-type metal-oxide-semiconductor field effect transistor N40 is 45um, and ditch length is 0.6um, and identity unit number m is 4；The launch site area area of the first described audion T26 and the second described audion T27 is 1, and identity unit number m is 2；Described the 3rd audion T28, the launch site area area of the 4th audion T29 and the 6th audion T31 are 1, and identity unit number m is 1；The launch site area area of the 5th audion T30 is 2, and identity unit number m is 1；The first described resistance R19 and the three resistance R21 is identical is 1k Ω；The second described resistance R20 is 0.5k Ω.
Have employed the video frequency output of this invention filtering driver circuit structure and include comparison circuit, circuit of output terminal and negative-feedback circuit, described negative-feedback circuit is connected to described circuit of output terminal.Adopting the video frequency output filtering driver of this circuit structure, it can utilize negative-feedback circuit balance output end electric current, thus being effectively improved quiescent current ICC, and then the stability of video image driving output is greatly improved.And the simple in construction of the video frequency output filtering driver circuit structure of the present invention, with low cost, range of application is also relatively broad.
Accompanying drawing explanation
Fig. 1 is the circuit structure diagram of video filtering driver output end of the prior art.
Fig. 2 is the circuit diagram of the video frequency output filtering driver circuit structure of the present invention.
Fig. 3 is the circuit diagram of the negative-feedback circuit in the video frequency output filtering driver circuit structure of the present invention.
The video frequency output that Fig. 4 is the present invention filters audion T28 input characteristic curve schematic diagram in driver circuit structure.
The video frequency output that Fig. 5 is the present invention filters audion T28 and T30 input characteristic curve schematic diagram in driver circuit structure.
Detailed description of the invention
In order to be more clearly understood that the technology page of the present invention, describe in detail especially exemplified by following example.
Refer to shown in Fig. 2, for the circuit diagram of the video frequency output filtering driver circuit structure of the present invention.
In one embodiment, this video frequency output filtering driver circuit structure includes comparison circuit, circuit of output terminal and negative-feedback circuit, video signal incoming end connects described circuit of output terminal by described comparison circuit, and described negative-feedback circuit is connected to described circuit of output terminal.In this circuit structure, described comparison circuit includes the first signal output part S1 and secondary signal outfan S2；Described circuit of output terminal includes a P type metal-oxide-semiconductor field effect transistor P46 and the first N-type metal-oxide-semiconductor field effect transistor N35；The first described signal output part S1 connects the grid of a described P type metal-oxide-semiconductor field effect transistor P46, and described secondary signal outfan S2 connects the grid of the first described N-type metal-oxide-semiconductor field effect transistor N35；The source electrode of a described P type metal-oxide-semiconductor field effect transistor P46 connects power supply；The source ground of the first described N-type metal-oxide-semiconductor field effect transistor N35；The drain electrode of a described P type metal-oxide-semiconductor field effect transistor P46 connects the drain electrode of the first described N-type metal-oxide-semiconductor field effect transistor N35 and forms the outfan of described video frequency output filtering driver circuit structure；Described negative-feedback circuit connects the first described signal output part S1 and secondary signal outfan S2, and is connected to the source electrode of a described P type metal-oxide-semiconductor field effect transistor P46 and the first N-type metal-oxide-semiconductor field effect transistor N35.
In more preferably embodiment, described negative-feedback circuit, as it is shown on figure 3, include the 2nd P type metal-oxide-semiconductor field effect transistor P45, 3rd P type metal-oxide-semiconductor field effect transistor P51, 4th P type metal-oxide-semiconductor field effect transistor P54, second N-type metal-oxide-semiconductor field effect transistor N39, 3rd N-type metal-oxide-semiconductor field effect transistor N40, first audion T26, second audion T27, 3rd audion T28, 4th audion T29, 5th audion T30, 6th audion T31, first resistance R19, second resistance R20 and the three resistance R21, the source electrode of the 2nd described P type metal-oxide-semiconductor field effect transistor P45, the source electrode of the 3rd described P type metal-oxide-semiconductor field effect transistor P51, the colelctor electrode of the 3rd described audion T28, the colelctor electrode of the 5th described audion T30 and one end of the 3rd described resistance R21 are all connected with described power supply, the other end of the 3rd described resistance R21 connects the source electrode of the 4th described P type metal-oxide-semiconductor field effect transistor P54, and the drain electrode of the 2nd described P type metal-oxide-semiconductor field effect transistor P45 and the grid of the 4th described P type metal-oxide-semiconductor field effect transistor P54 are all connected with the first described signal output part S1；The drain and gate of the 3rd described P type metal-oxide-semiconductor field effect transistor P51 is connected with each other, and connects the grid of the 2nd described P type metal-oxide-semiconductor field effect transistor P45 and the colelctor electrode of the first described audion T26；The drain electrode of the 4th described P type metal-oxide-semiconductor field effect transistor P54 connects the described base stage of the 3rd audion T28, the base stage of the 5th audion T30 and the 6th described audion T31 colelctor electrode respectively；The 6th described audion T31 base stage connects the drain electrode of the described emitter stage of the 5th audion T30, the base stage of the 4th audion T29 and the 3rd described N-type metal-oxide-semiconductor field effect transistor N40 respectively；The emitter stage of the 3rd described audion T28 connects the drain electrode of the colelctor electrode of the 4th described audion T29, the base stage of the first described audion T26, the base stage of the second described audion T27 and the second described N-type metal-oxide-semiconductor field effect transistor N39 respectively；The grid of the second described N-type metal-oxide-semiconductor field effect transistor N39, the grid of the 3rd described N-type metal-oxide-semiconductor field effect transistor N40 and the colelctor electrode of the second described audion T27 are all connected with described secondary signal outfan S2；The equal ground connection of emitter stage of the described emitter stage of the first audion T26, the emitter stage of the second audion T27, the emitter stage of the 4th audion T29 and the 6th audion T31；The source electrode of the second described N-type metal-oxide-semiconductor field effect transistor N39 is by the first described resistance R19 ground connection；The source electrode of the 3rd described N-type metal-oxide-semiconductor field effect transistor N40 is by the second described resistance R20 ground connection.
In preferred embodiment, the furrow width of a described P type metal-oxide-semiconductor field effect transistor P46 is 30um, and ditch length is 0.6um, and identity unit number m is 24；The furrow width of the first described N-type metal-oxide-semiconductor field effect transistor N35 is 45um, and ditch length is 0.6um, and identity unit number m is 24；The 2nd described P type metal-oxide-semiconductor field effect transistor P45 is identical with the 3rd described P type metal-oxide-semiconductor field effect transistor P51, is furrow width 10um, and the long 2um of ditch, identity unit number m is 3；The furrow width of the 4th described P type metal-oxide-semiconductor field effect transistor P54 is 10um, and ditch length is 0.6um, and identity unit number m is 2；The furrow width of the second described N-type metal-oxide-semiconductor field effect transistor N39 is 45um, and ditch length is 0.6um, and identity unit number m is 2；The furrow width of the 3rd described N-type metal-oxide-semiconductor field effect transistor N40 is 45um, and ditch length is 0.6um, and identity unit number m is 4；The launch site area area of the first described audion T26 and the second described audion T27 is 1, and identity unit number m is 2；Described the 3rd audion T28, the launch site area area of the 4th audion T29 and the 6th audion T31 are 1, and identity unit number m is 1；The launch site area area of the 5th audion T30 is 2, and identity unit number m is 1；The first described resistance R19 and the three resistance R21 is identical is 1k Ω；The second described resistance R20 is 0.5k Ω.
In an application of the invention, being the metal-oxide-semiconductor of L for ditch length, the voltage-current relationship of transistor is:knFor process transconductance parameter.When saturation region,P46 and N35 is that electric current is identical up and down to pipe.The furrow width of P46 is 30um, and ditch length is 0.6um, and identity unit number m is the furrow width of 24, N39 is 45um, and ditch length is 0.6um, and identity unit number m is 24, and derivation P54 is as follows with N39 current relationship:
Due to ID46=ID35,
2(VGS46-VTH)2=3(VGS35-VTH)2,
The electric current of P54 isThe electric current of N39 isR21=R19
So Namely
It is believed that the electric current approximately equal of P54 and N39.
Again it can be seen that N39, N40 also composition current mirror, owing to R19 resistance is 2 times of R20, so N40 electric current is N39 2 times.
As it is shown on figure 3, P54 electric current is the electric current of audion T31, if initial I31=I, the electric current of audion T28 is made up of two-way electric current, and a road is N39 electric current, and another road is audion T29 electric current；Owing to T29 and T31 is mirror current source, T29 and T31 electric current is identical.Again because P54 and N39 electric current is identical, so T28 electric current is T31(T29) 2 times of electric current, I28=2I.T30 electric current is the electric current of N40, is all 2I.
Assume initially that the electric current I46 of pipe P46 on outfan increases (namely P46_G terminal potential reduces), then the electric current on P54 increases, and audion T31 electric current also increases △ I, according to audion equationThe BE causing T31 ties pressure drop and increases △ V1, and namely T29 base stage and N40_D current potential raise △ V1；
Then point three steps are needed to be analyzed:
(1) N40_D current potential raises △ V1, and the BE of T30 knot pressure drop is constant, so that the base potential of T30 raises △ V1, △ V1 is raised in this BE knot pressure drop allowed on T28 so that electric current I28 increases △ I,
(2) BE of T29 ties pressure drop increase △ V1, causes that I29 electric current increases △ I, and I28=I39+I29, I29 electric current is constant, and this can make the electric current on T28 increase △ I, causes that the BE on T28 ties pressure drop and raises △ V2,
(3) need to judge the magnitude relationship between variable quantity △ V1 and △ V2, so that it is determined that the base potential of T26 is raised or reduces.This relation judges to be analyzed by the input characteristic curve of audion, and as shown in Figure 4, the value of △ V1 is greater than the value of △ V2, then the base potential of T26 is also for what raise, and the amplitude of raising is the difference of △ V1-△ V2.
Owing to the base potential of T26 is raised, according to formulaSo the electric current I26 of T26 also increases therewith, and namely the electric current of P51 increases；Owing to metal-oxide-semiconductor P45 and P51 is image current relation, then the electric current of P45 increases；
Finally, as it is shown on figure 3, the D end of P45 is connected with the G end of P46, when the electric current of P45 increases, then the current potential of P46_G end is raised, contrary with the situation that original hypothesis P46_G terminal potential reduces, i.e. one negative feedback loop of whole railway superstructures.
Equally, it is also possible to from outfan, pipe N35 is analyzed checking.
Assuming initially that the electric current I35 of pipe N35 under outfan increases (namely N35_G terminal potential is raised), then the electric current of N39 increases △ I, due to 2 times (see above and state derivation content) that N40 electric current is N39, the electric current of N40 increases 2 × △ I；Simultaneously as the current settings of P54 is constant, namely T31 electric current is constant, according to formulaCan show that the BE knot pressure drop of T31 is constant, say, that the base potential of T29 immobilizes,
Secondly as I30=I40, I28=I39+I29, wherein audion T29 and T31 is mirror current source, so I29=I31 is definite value, then N39 electric current increases △ I and causes that the electric current of T28 increases △ I, the electric current of N40 increases 2 × △ I and causes that the electric current of T30 increases 2 × △ I
Then, owing to the identity unit number m that identity unit number m is 1, T30 of audion T28 is 2, I28=I30, then com-parison and analysis electric current two pipe BE are tied when affecting, we are analyzed from electric current density angle, and electron current density equation isThen ρ 28=2 × ρ 30, below divides three steps to be analyzed:
(1) according to formulaThe electric current of T28 increases △ I, and electric current density increases △ ρ, then the BE of T28 ties pressure drop and raises △ V1；The electric current of T30 increases the electric current density that identity unit number m is 2, T30 of 2 × △ I, T30 and increases △ ρ, then the BE of T30 ties pressure drop and raises △ V2,
(2) owing to the base potential of T29 immobilizes, then the base potential of T30 raises △ V2, namely the base potential of T28 raises △ V2,
(3) base potential for T26 is raised or reduces, need to judge the magnitude relationship of △ V2 and △ V1, this relation judges that we can be analyzed from the input characteristic curve of audion, as shown in Figure 5, the value of △ V2 is greater than the value of △ V1, then T26(T27) base potential raise the difference that amplitude is △ V2-△ V1.
Finally, the base potential of T27 is raised, and namely the BE knot pressure drop of T27 is raised, then according to formulaElectric current on T27 increases, then the current potential of N35_G end declines, and this situation about raising with original hypothesis N35_G terminal potential is contrary, i.e. one negative feedback loop of whole railway superstructures.
This negative feedback structure can dynamically adjust the electric current of video filtering driver output end, and then stablizes quiescent current ICC.
Comparing with prior art, up and down pipe area proportioning is reduced outlet tube electric current for integrated circuit CS3643 by reducing outlet tube metal-oxide-semiconductor, its effect is inconspicuous, and outlet tube ability too much can be had impact by the reduction of outlet tube area.(mono signal passage), as shown in the table.
Table 1 prior art adjusts the effect table that pipe area improves quiescent current up and down
And this utilizes the present invention to reduce the outlet tube function of current substantially by adjusting the negative-feedback circuit increased, as shown in the table, meet expected design (single channel).
Table 2 utilizes the present invention to improve the effect table of quiescent current
From test result, a negative feedback structure is increased at video filtering driver output end, and improve the situation owing to the concordance deviation of technique or signal transmission causes video filtering drive output electric current bigger than normal or less than normal by adjusting feedback circuit, there is feasibility, and obvious to improving quiescent current ICC ability effect.
Have employed the video frequency output of this invention filtering driver circuit structure and include comparison circuit, circuit of output terminal and negative-feedback circuit, described negative-feedback circuit is connected to described circuit of output terminal.Adopting the video frequency output filtering driver of this circuit structure, it can utilize negative-feedback circuit balance output end electric current, thus being effectively improved quiescent current ICC, and then the stability of video image driving output is greatly improved.And the simple in construction of the video frequency output filtering driver circuit structure of the present invention, with low cost, range of application is also relatively broad.
In this description, the present invention is described with reference to its specific embodiment.But it is clear that still may be made that various amendment and conversion are without departing from the spirit and scope of the present invention.Therefore, specification and drawings is regarded in an illustrative, rather than a restrictive.
Claims (2)
1. a video frequency output filtering driver circuit structure, described circuit structure includes comparison circuit, circuit of output terminal and negative-feedback circuit, video signal incoming end connects described circuit of output terminal by described comparison circuit, and described negative-feedback circuit is connected to described circuit of output terminal；
Described comparison circuit includes the first signal output part (S1) and secondary signal outfan (S2)；Described circuit of output terminal includes P type metal-oxide-semiconductor field effect transistor (P46) and the first N-type metal-oxide-semiconductor field effect transistor (N35)；
Described negative-feedback circuit includes the 2nd P type metal-oxide-semiconductor field effect transistor (P45), 3rd P type metal-oxide-semiconductor field effect transistor (P51), 4th P type metal-oxide-semiconductor field effect transistor (P54), second N-type metal-oxide-semiconductor field effect transistor (N39), 3rd N-type metal-oxide-semiconductor field effect transistor (N40), first audion (T26), second audion (T27), 3rd audion (T28), 4th audion (T29), 5th audion (T30), 6th audion (T31), first resistance (R19), second resistance (R20) and the 3rd resistance (R21), the source electrode of the 2nd described P type metal-oxide-semiconductor field effect transistor (P45), the source electrode of the 3rd described P type metal-oxide-semiconductor field effect transistor (P51), the colelctor electrode of the 3rd described audion (T28), the colelctor electrode of the 5th described audion (T30) and one end of the 3rd described resistance (R21) are all connected with power supply, the other end of the 3rd described resistance (R21) connects the source electrode of the 4th described P type metal-oxide-semiconductor field effect transistor (P54), and the drain electrode of the 2nd described P type metal-oxide-semiconductor field effect transistor (P45) and the grid of the 4th described P type metal-oxide-semiconductor field effect transistor (P54) are all connected with described the first signal output part (S1)；The drain and gate of the 3rd described P type metal-oxide-semiconductor field effect transistor (P51) is connected with each other, and connects the grid of the 2nd described P type metal-oxide-semiconductor field effect transistor (P45) and the colelctor electrode of described the first audion (T26)；The drain electrode of the 4th described P type metal-oxide-semiconductor field effect transistor (P54) connects the described base stage of the 3rd audion (T28), the base stage of the 5th audion (T30) and the 6th described audion (T31) colelctor electrode respectively；The 6th described audion (T31) base stage connects the drain electrode of the described emitter stage of the 5th audion (T30), the base stage of the 4th audion (T29) and the 3rd described N-type metal-oxide-semiconductor field effect transistor (N40) respectively；The emitter stage of the 3rd described audion (T28) connects the drain electrode of the colelctor electrode of the 4th described audion (T29), the base stage of described the first audion (T26), the base stage of described the second audion (T27) and the second described N-type metal-oxide-semiconductor field effect transistor (N39) respectively；The grid of the second described N-type metal-oxide-semiconductor field effect transistor (N39), the grid of the 3rd described N-type metal-oxide-semiconductor field effect transistor (N40) and the colelctor electrode of described the second audion (T27) are all connected with described secondary signal outfan (S2)；The equal ground connection of emitter stage of the described emitter stage of the first audion (T26), the emitter stage of the second audion (T27), the emitter stage of the 4th audion (T29) and the 6th audion (T31)；The source electrode of the second described N-type metal-oxide-semiconductor field effect transistor (N39) is by described the first resistance (R19) ground connection；The source electrode of the 3rd described N-type metal-oxide-semiconductor field effect transistor (N40) is by described the second resistance (R20) ground connection.
2. video frequency output according to claim 1 filtering driver circuit structure, it is characterised in that the furrow width of described P type metal-oxide-semiconductor field effect transistor (P46) is 30um, and ditch length is 0.6um, and identity unit number m is 24；The furrow width of the first described N-type metal-oxide-semiconductor field effect transistor (N35) is 45um, and ditch length is 0.6um, and identity unit number m is 24；The 2nd described P type metal-oxide-semiconductor field effect transistor (P45) and the 3rd described P type metal-oxide-semiconductor field effect transistor (P51) is identical, is furrow width 10um, and the long 2um of ditch, identity unit number m is 3；The furrow width of the 4th described P type metal-oxide-semiconductor field effect transistor (P54) is 10um, and ditch length is 0.6um, and identity unit number m is 2；The furrow width of the second described N-type metal-oxide-semiconductor field effect transistor (N39) is 45um, and ditch length is 0.6um, and identity unit number m is 2；The furrow width of the 3rd described N-type metal-oxide-semiconductor field effect transistor (N40) is 45um, and ditch length is 0.6um, and identity unit number m is 4；The launch site area area of described the first audion (T26) and described the second audion (T27) is 1, and identity unit number m is 2；The launch site area area of described the 3rd audion (T28), the 4th audion (T29) and the 6th audion (T31) is 1, and identity unit number m is 1；The launch site area area of the 5th audion (T30) is 2, and identity unit number m is 1；Described the first resistance (R19) is identical with the 3rd resistance (R21) is 1k Ω；Described the second resistance (R20) is 0.5k Ω.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1237040A (en) * | 1998-03-30 | 1999-12-01 | 日本电气株式会社 | Logic circuit having reduced power consumption |
| CN2404269Y (en) * | 1999-12-08 | 2000-11-01 | 吴刚 | High fidelity final stage frequency power current amplifier |
| CN201294512Y (en) * | 2008-11-25 | 2009-08-19 | 青岛海信电器股份有限公司 | Logic circuit and television set with the same |
| US7635990B1 (en) * | 2008-07-18 | 2009-12-22 | Xilinx, Inc. | Methods and apparatus for implementing an output circuit |
| CN202713268U (en) * | 2012-08-13 | 2013-01-30 | 无锡华润矽科微电子有限公司 | Circuit structure of video output filtering driver |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1237040A (en) * | 1998-03-30 | 1999-12-01 | 日本电气株式会社 | Logic circuit having reduced power consumption |
| CN2404269Y (en) * | 1999-12-08 | 2000-11-01 | 吴刚 | High fidelity final stage frequency power current amplifier |
| US7635990B1 (en) * | 2008-07-18 | 2009-12-22 | Xilinx, Inc. | Methods and apparatus for implementing an output circuit |
| CN201294512Y (en) * | 2008-11-25 | 2009-08-19 | 青岛海信电器股份有限公司 | Logic circuit and television set with the same |
| CN202713268U (en) * | 2012-08-13 | 2013-01-30 | 无锡华润矽科微电子有限公司 | Circuit structure of video output filtering driver |
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| CN103595397A (en) | 2014-02-19 |
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Address after: 214135 -6, Linghu Avenue, Wuxi Taihu international science and Technology Park, Wuxi, Jiangsu, China, 180 Patentee after: China Resources micro integrated circuit (Wuxi) Co., Ltd Address before: 214000 Jiangsu province Wuxi City Linghu Road No. 180 -22 Patentee before: WUXI CHINA RESOURCES SEMICO Co.,Ltd. |