CN103605218B - Waveguide electro-optic modulator and preparation method thereof - Google Patents
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Abstract
本发明公开了一种波导型电光调制器，包括波导结构和上下电极，所述波导结构包括在衬底上至下而上依次排列的下N型半导体包层、半导体芯层和上N型半导体包层，下电极与下N型半导体包层接触，上电极与上N型半导体包层接触，所述下N型半导体包层和半导体芯层之间具有绝缘体层，或者所述半导体芯层和上N型半导体包层之间具有绝缘体层。本发明还公开了一种波导型电光调制器的制作方法。这种结构的电光调制器可有效的形成电流阻挡，降低光场的波导损耗和微波电极损耗。本发明能够改善电光调制器的调制特性。
The invention discloses a waveguide type electro-optic modulator, which comprises a waveguide structure and upper and lower electrodes, and the waveguide structure comprises a lower N-type semiconductor cladding layer, a semiconductor core layer and an upper N-type semiconductor layer arranged in sequence from bottom to top on a substrate. The cladding layer, the lower electrode is in contact with the lower N-type semiconductor cladding layer, the upper electrode is in contact with the upper N-type semiconductor cladding layer, and there is an insulator layer between the lower N-type semiconductor cladding layer and the semiconductor core layer, or the semiconductor core layer and the semiconductor core layer There is an insulator layer between the upper N-type semiconductor cladding layers. The invention also discloses a manufacturing method of the waveguide electro-optical modulator. The electro-optic modulator with this structure can effectively form a current barrier and reduce the waveguide loss and microwave electrode loss of the optical field. The invention can improve the modulation characteristics of the electro-optic modulator.
Description
Technical field
The present invention relates to optic communication device technical field, particularly a kind of waveguide electro-optic modulator and preparation method thereof.
Background technology
In recent years, along with the development of high-speed high capacity infotech, the optical communication information processing technology obtains extensive concern.Electrooptic modulator, at fiber optic communication field, particularly plays vital effect in the spectral efficient fiber optic network utilizing advanced modulation formats.Driving voltage is one of important parameter of electrooptic modulator, and lower driving voltage contributes to improving system performance, reduces power attenuation.With LiNbO
3base electrooptic modulator is compared, and iii-v electrooptic modulator has the advantages such as compact conformation, half-wave voltage be low, easy of integration, and it can be played a greater and greater role at following optical communication field.
Traditional Group III-V semiconductor electrooptic modulator adopts back-biased P-I-N type structure, and advantage is that voltage-drop loading efficiency is high, but the P district free-carrier Absorption of P-I-N type structure is comparatively large, causes the waveguide loss of P-I-N type waveguiding structure larger.According to the literature (TakayukiYamanakaetal., High-performanceInP-basedOpticalModulators, Vol.4No.7, July2006), the optical transmission loss in N-type semiconductor is 1/20 of identical doping content P-type semiconductor.In addition, the carrier mobility of P-type semiconductor is less than N-type semiconductor, and the lossy microwave causing P-I-N type waveguiding structure is comparatively large, limits its application in field of high-speed optical communications.Therefore, replace P type restraining barrier can greatly reduce the loss of waveguiding structure and the loss of microwave electrodes with N-type restraining barrier, and then improve modulation efficiency and modulation band-width.
For the shortcoming that the waveguide loss of P-I-N type electrooptic modulator is large, Japanese NTT company Mihailidi etc. (United States Patent (USP), the patent No.: 5647029, publication date: on July 8th, 1997) proposed the InP-base electrooptic modulator of N-I-N structured material in 1997.This configuration eliminates the impact of P-type layer, reduce lossy microwave, also driving voltage is dropped to about 2V simultaneously.But simple N-I-N structure has leakage current and produces when impressed voltage, will have a strong impact on the electric field being carried in active area, make modulation efficiency greatly reduce.Therefore need to introduce current barrier layer between two N-type layer.
In the structure now reported, restraining barrier is to take P-type material or semi insulating material (NobuhiroKikuchietal., 80-Gb/sLow-Driving-VoltageInPDQPSKModulatorWithann-p-i-n Structure, IEEEPHOTONICSTECHNOLOGYLETTERS, VOL.21, NO.12, JUNE15,2009), but the light loss of P-type material is larger, and effectively stop to realize, its doping content needs accurately to control, and N-P-I-N structure also brings certain difficulty to epitaxial growth simultaneously.NTT company of Japan adopts thicker semi insulating material as restraining barrier, InP-base electrooptic modulator (the K.Tsuzukietal. of N-SI-I-N structured material was proposed in 2003,40Gbit/sn – i – nInPMach – Zehndermodulatorwitha π voltageof2.2V, ELECTRONICSLETTERS, Vol.39, No.20,2ndOctober2003).Wherein, SI layer is semi-insulating InP layer, plays the effect of impedance and speeds match and blocks drain electric current.This device length is 3mm, and adopt class coplanar waveguide electrode, under bandwidth is 42GHz situation, half-wave voltage is 2.2V, is a kind of preferably in InP-base electrooptic modulator in recent years.But this structure has a defect: SI-InP layer is thicker, divide to fall voltage greatly, reduce modulation efficiency, thus make half-wave voltage be difficult to further reduction, be unfavorable for the electro-optical modulation device realizing low-power consumption.
Summary of the invention
In view of this, goal of the invention of the present invention is: the modulating characteristic how improving electrooptic modulator.
For achieving the above object, technical scheme of the present invention is specifically achieved in that
The invention discloses a kind of waveguide electro-optic modulator, comprise waveguiding structure and upper/lower electrode, described waveguiding structure be included on substrate to lower and on the lower N-type semiconductor covering, semiconductor core and the upper N-type semiconductor covering that are arranged in order, bottom electrode contacts with lower N-type semiconductor covering, top electrode contacts with upper N-type semiconductor covering, between described lower N-type semiconductor covering and semiconductor core, there is insulator layer, or between described semiconductor core and upper N-type semiconductor covering, there is insulator layer;
Wherein, the refractive index of semiconductor cladding layers, insulator layer and semiconductor core uses n respectively
1, n
2, n
3retrain, meet n
3>n
1, n
3>n
2, n
1>n
2.
Described insulator layer adopts oxide-insulator or nitride insulator.
Described insulator layer adopts silicon dioxide SiO
2insulator.
Described insulator layer adopts silicon nitride SiN
xinsulator.
Described insulator layer adopts the oxide-insulator or nitride insulator that contain Al composition.
Described insulator layer thickness is 1%-30% of semiconductor core layer thickness.
The length range of described electrooptic modulator is 0.1mm ~ 10mm.
The optical waveguide of described electrooptic modulator adopts ridge waveguide structure, or curved waveguide structure, or oblique wave-guide structure.
The invention also discloses a kind of method for making of waveguide electro-optic modulator, the method comprises:
Substrate is formed the device of N-type semiconductor covering, semiconductor core and insulator layer on having successively;
By surface bond technology, the insulator layer surface of described device is bonded in silicon-on-insulator SOI substrate; Wherein, described SOI substrate comprise to lower and on the silicon substrate, the silicon dioxide that are formed successively bury oxide layer and N-type doped silicon layer, described N-type doped silicon layer is as lower N-type semiconductor covering;
Form top electrode at upper N-type semiconductor cladding surface respectively, form bottom electrode at lower N-type semiconductor cladding surface.
The invention also discloses a kind of method for making of waveguide electro-optic modulator, the method comprises:
Substrate is formed the device of N-type semiconductor covering and semiconductor core on having successively;
The N-type doped silicon layer of silicon-on-insulator SOI substrate top layer is carried out the oxidation of predetermined depth, form insulator layer, the N-type doped silicon layer of remainder is as lower N-type semiconductor covering; Wherein, described SOI substrate comprise to lower and on the silicon substrate, the silicon dioxide that are formed successively bury oxide layer and N-type doped silicon layer;
By surface bond technology by the insulator layer surface of the semiconductor core surface bond of described device in SOI substrate;
Form top electrode at upper N-type semiconductor cladding surface respectively, form bottom electrode at lower N-type semiconductor cladding surface.
The invention also discloses a kind of method for making of waveguide electro-optic modulator, the method comprises:
On substrate successively N-type semiconductor covering under growth, semiconductor core, containing the semiconductor layer of Al composition and upper N-type semiconductor covering;
Contain the semiconductor layer oxidation of Al composition by the method for lateral oxidation or nitrogenize by described or be nitrided into alundum (Al2O3) Al
2o
3or aluminium nitride AlN insulator layer;
Form top electrode at upper N-type semiconductor cladding surface respectively, form bottom electrode at lower N-type semiconductor cladding surface.
As seen from the above technical solutions, the present invention adds thinner insulator layer between semiconductor cladding layers and semiconductor core, for the formation of blocks drain electric current, reduces leakage current to the impact of microwave signal, ensures that electric field loads effectively simultaneously.Therefore, the present invention can improve the modulating characteristic of electrooptic modulator.
Accompanying drawing explanation
Fig. 1 a and Fig. 1 b is respectively two kinds of structural representations of waveguiding structure of the present invention.
Fig. 2 is the embodiment of the present invention one waveguide electro-optic modulator structural representation.
Fig. 3 is the embodiment of the present invention two waveguide electro-optic modulator structural representation.
Embodiment
For making object of the present invention, technical scheme and advantage clearly understand, to develop simultaneously embodiment referring to accompanying drawing, the present invention is described in more detail.
Core concept of the present invention is: for the problem that light loss is comparatively large and semi insulating material dividing potential drop is too large of P-type material, propose to adopt N-I-O-N shaped material to make modulator waveguide, wherein N represents semiconductor cladding layers, I represents semiconductor core, O represents the thinner insulator layer that the present invention proposes, because the free carrier in P district is more much larger than the free-carrier Absorption in N district, adopt N-type overlayer can reduce waveguide loss and the microwave electrodes loss of light field, adopt thinner insulator layer for current blocking simultaneously, form effective electric field and load.The electrooptic modulator of this structure not only reduces waveguide loss, is also conducive to the electrooptic modulator realizing low-power consumption.
The invention provides a kind of N-I-O-N type electrooptic modulator, it is a kind of waveguide electro-optic modulator, comprise waveguiding structure and upper/lower electrode, described waveguiding structure be included on substrate to lower and on the lower N-type semiconductor covering, semiconductor core and the upper N-type semiconductor covering that are arranged in order, bottom electrode contacts with lower N-type semiconductor covering, top electrode contacts with upper N-type semiconductor covering, between described lower N-type semiconductor covering and semiconductor core, there is insulator layer, or between described semiconductor core and upper N-type semiconductor covering, there is insulator layer; Wherein, the refractive index of semiconductor cladding layers, insulator layer and semiconductor core uses n respectively
1, n
2, n
3retrain, meet n
3>n
1, n
3>n
2, n
1>n
2.The length range of waveguide electro-optic modulator of the present invention is 0.1mm ~ 10mm.And these waveguide electro-optic modulator two ends all adopt end face anti-reflective plated film, the light reflectivity scope of plated film rear end face is 0.01% ~ 10%.This waveguide electro-optic modulator can be electro-optic phase modulator, also can be interfere type electrooptic modulator.The bottom electrode of this waveguide electro-optic modulator and top electrode can adopt travelling wave electric pole structure.
The optical waveguide of waveguide electro-optic modulator of the present invention can adopt ridge waveguide structure, or curved waveguide structure, or oblique wave-guide structure.The embodiment of the present invention, for ridge waveguide structure, carries out signal explanation.Fig. 1 a and Fig. 1 b is respectively two kinds of structural representations of waveguiding structure of the present invention.
As shown in Figure 1a, this ridge waveguide structure to lower and on comprise substrate 1, lower N-type ohmic contact layer 2, lower N-type semiconductor covering 3, semiconductor core 4, insulator layer 5, upper N-type semiconductor covering 3 ' and upper N-type ohmic contact layer 2 ' successively.
As shown in Figure 1 b, this ridge waveguide structure to lower and on comprise substrate 1, lower N-type ohmic contact layer 2, lower N-type semiconductor covering 3, insulator layer 5, semiconductor core 4, upper N-type semiconductor covering 3 ' and upper N-type ohmic contact layer 2 ' successively.
From above-mentioned two kinds of structures, insulator layer 5 of the present invention is between two N-type semiconductor coverings, between lower N-type semiconductor covering and semiconductor core, also between semiconductor core and upper N-type semiconductor covering, can can adjust flexibly according to embody rule.Insulator layer 5 can the drift motion of block electrons after adding electric field, and then the formation of blocks drain electric current, ensure that electric field is effectively carried in semiconductor core 4.Wherein, insulator layer 5 adopts oxide-insulator or nitride insulator.Particularly, silicon dioxide (SiO can be adopted
2) insulator, also can adopt silicon nitride (SiN
x) insulator, also adopt the oxide-insulator containing Al composition or nitride insulator, such as alundum (Al2O3) (Al
2o
3) or aluminium nitride (AlN).Insulator layer 5 thinner thickness of the present invention is 1%-30% of semiconductor core layer thickness.In addition, semiconductor core 4, also referred to as multiple quantum well active layer, light field mainly concentrates on this layer.N-type semiconductor covering is by N-type ohmic contact layer and electrode contact, so in Fig. 1 a and Fig. 1 b, upper N-type semiconductor covering 3 ' is contacted with top electrode (not shown) by upper N-type ohmic contact layer 2 ', and lower N-type semiconductor covering 3 is contacted with bottom electrode (not shown) by lower N-type ohmic contact layer 2.N-type semiconductor covering and N-type ohmic contact layer are N-type doped structure, can be the various basic units be made up of III-V group element, such as gallium nitride, indium phosphorus (InP) etc.
Enumerate specific embodiment to be below described in detail to waveguide electro-optic modulator of the present invention.
Embodiment one
Fig. 2 is the embodiment of the present invention one waveguide electro-optic modulator structural representation.As shown in Figure 2, be InP-InGaAlAs/InAlAs-SiO
2-Si(N-I-O-N type) ridge waveguide structure electrooptic modulator.
Specifically can there be two kinds of method for makings.
The first method for making comprises the following steps:
Step 11, formed successively on substrate have on the device of N-type semiconductor covering, semiconductor core and insulator layer;
Step 12, by surface bond technology, the insulator layer surface of described device is bonded in (silicon-on-insulator) SOI substrate; Wherein, described SOI substrate comprise to lower and on the silicon substrate, the silicon dioxide that are formed successively bury oxide layer and N-type doped silicon layer, described N-type doped silicon layer is as lower N-type semiconductor covering;
Step 13, form top electrode at upper N-type semiconductor cladding surface respectively, form bottom electrode at lower N-type semiconductor cladding surface.
Particularly, the epitaxial material of device is as described below.By strong interaction between metal and support (MOCVD) method, first extension on semi-insulating InP substrate 6 material, successively growth upper N-type doping InGaAs ohmic contact layer 7(thickness 200nm, doping content about 1 × 10
19cm
-3), upper N-type doping InP semiconductor cladding layers 8(thickness 1 μm, doping content about 1 × 10
18cm
-3), undoped InGaAsP (InGaAsP) limiting layer 9(light wavelength of fluorescence 1.46 μm on the thick Lattice Matching of 50nm), without strain indium gallium aluminum arsenide/indium aluminium arsenic (InGaAlAs/InAlAs) multi-quantum well semiconductor sandwich layer 10(light wavelength of fluorescence 1.37 μm, 20 quantum wells: the wide 10nm of trap, light wavelength of fluorescence 1.475 μm, build wide 10nm, lattice matched materials), undoped InGaAsP limiting layer 9 ' (light wavelength of fluorescence 1.46 μm) under the thick Lattice Matching of 50nm.Next on lower undoped InGaAsP limiting layer 9 ', SiO is deposited by the method for plasma-reinforced chemical vapor deposition (PlasmaEnhancedChemicalVapourDeposition, PECVD)
2insulator layer 11, thickness is 10nm.
Then semi-insulating InP substrate 6, upper N-type doping InGaAs ohmic contact layer 7, upper N-type doping InP semiconductor cladding layers 8, upper undoped InGaAsP limiting layer 9, InGaAlAs/InAlAs multi-quantum well semiconductor sandwich layer 10, lower undoped InGaAsP limiting layer 9 ' and SiO is comprised by surface bond technology by above-mentioned
2the InP-base material of insulator layer 11 passes through SiO
2insulator layer 11 surface bond is in SOI substrate, and the structure of above-mentioned SOI substrate is followed successively by Si substrate 12, SiO from bottom to top
2bury oxide layer 18 layers and N-type doping Si layer 13 (thickness 200nm, doping content about 1 × 10
19cm
-3).And by thinning by not shown in the figures for semi-insulating InP substrate 6() remove, form InP-InGaAlAs/InAlAs-SiO
2the semi-conductor electricity light modulator structure of-Si.Device adopts ridge waveguide structure, and produce ridge waveguide by the method for photoetching and dry etching, ridge is wide is 1.5 μm, high 1.8 μm.Finally, make on upper N-type doping InGaAs ohmic contact layer 7 surface and form top electrode 19, make on N-type doping Si layer 13 surface and form bottom electrode 20.
Wherein, preferably, InGaAlAs/InAlAs multi-quantum well semiconductor sandwich layer 10 is between undoped InGaAsP limiting layer, and undoped InGaAsP limiting layer can play effect light field be limited in semiconductor core.N-type doping Si layer 13 in SOI substrate is as lower N-type semiconductor covering.Due to SiO
2insulator layer 11 upper N-type doping InP semiconductor cladding layers 8 and as under the N-type of N-type semiconductor covering adulterate between Si layer 13, significantly reduce the leakage current of this structure.
The second method for making comprises the following steps:
Step 21, on substrate, form the device of N-type semiconductor covering and semiconductor core on having successively;
Step 22, the N-type doped silicon layer of silicon-on-insulator (SOI) substrate top layer is carried out the oxidation of predetermined depth, form insulator layer, the N-type doped silicon layer of remainder is as lower N-type semiconductor covering;
Step 23, by surface bond technology by the insulator layer surface of the semiconductor core surface bond of described device in SOI substrate;
Step 24, form top electrode at upper N-type semiconductor cladding surface respectively, form bottom electrode at lower N-type semiconductor cladding surface.
Particularly, the epitaxial material of device is as described below.By strong interaction between metal and support (MOCVD) method, first extension on semi-insulating InP substrate 6 material, successively growth upper N-type doping InGaAs ohmic contact layer 7(thickness 200nm, doping content about 1 × 10
19cm
-3), upper N-type doping InP semiconductor cladding layers 8(thickness 1 μm, doping content about 1 × 10
18cm
-3), undoped InGaAsP (InGaAsP) limiting layer 9(light wavelength of fluorescence 1.46 μm on the thick Lattice Matching of 50nm), without strain indium gallium aluminum arsenide/indium aluminium arsenic (InGaAlAs/InAlAs) multi-quantum well semiconductor sandwich layer 10(light wavelength of fluorescence 1.37 μm, 20 quantum wells: the wide 10nm of trap, light wavelength of fluorescence 1.475 μm, build wide 10nm, lattice matched materials), undoped InGaAsP limiting layer 9 ' (light wavelength of fluorescence 1.46 μm) under the thick Lattice Matching of 50nm.
The structure of SOI substrate is followed successively by Si substrate 12, SiO from bottom to top
2bury oxide layer 18 layers and N-type doping Si layer 13.Then the N-type doped silicon layer 13 of SOI substrate top layer is carried out the oxidation of predetermined depth, form SiO
2insulator layer 11, the N-type doped silicon layer 13 of remainder is as lower N-type semiconductor covering.
Then by surface bond technology by the above-mentioned InP-base material comprising semi-insulating InP substrate 6, upper N-type doping InGaAs ohmic contact layer 7, upper N-type doping InP semiconductor cladding layers 8, upper undoped InGaAsP limiting layer 9, InGaAlAs/InAlAs multi-quantum well semiconductor sandwich layer 10 and lower undoped InGaAsP limiting layer 9 ' by lower undoped InGaAsP limiting layer 9 ' surface bond in SOI substrate.And by thinning by not shown in the figures for semi-insulating InP substrate 6() remove, form InP-InGaAlAs/InAlAs-SiO
2the semi-conductor electricity light modulator structure of-Si.Device adopts ridge waveguide structure, and produce ridge waveguide by the method for photoetching and dry etching, ridge is wide is 1.5 μm, high 1.8 μm.Finally, make on upper N-type doping InGaAs ohmic contact layer 7 surface and form top electrode 19, make on N-type doping Si layer 13 surface and form bottom electrode 20.
Wherein, preferably, InGaAlAs/InAlAs multi-quantum well semiconductor sandwich layer 10 is between undoped InGaAsP limiting layer, and undoped InGaAsP limiting layer can play effect light field be limited in semiconductor core.In SOI substrate, the N-type doping Si layer 13 of remainder is as lower N-type semiconductor covering.Due to SiO
2insulator layer 11 upper N-type doping InP semiconductor cladding layers 8 and as under the N-type of N-type semiconductor covering adulterate between Si layer 13, significantly reduce the leakage current of this structure.
To sum up, analyze the electrooptic modulator optical field distribution shown in Fig. 2, research shows, the low-refraction SiO of 10nm
2insulator layer 11 does not affect the distribution of light field, and light field still mainly concentrates on InGaAlAs/InAlAs multi-quantum well semiconductor sandwich layer 10, and its light restriction factor is up to 70%.
Work as SiO
2when insulator layer 11 thickness is 10nm, its dividing potential drop only 0.25V during impressed voltage 2V, makes most voltage be added in semiconductor core, have also been obtained raising relative to traditional N-SI-I-N structure half-wave voltage.
Embodiment two
Fig. 3 is the embodiment of the present invention two waveguide electro-optic modulator structural representation.As shown in Figure 3, be InP-InGaAsP/InP-Al
2o
3-InP(N-I-O-N type) ridge waveguide structure electrooptic modulator.
Method for making comprises the following steps:
Step 31, on substrate successively N-type semiconductor covering under growth, semiconductor core, containing the semiconductor layer of Al composition and upper N-type semiconductor covering;
Step 32, by the method for lateral oxidation or nitrogenize by the described oxidation of the semiconductor layer containing Al composition or be nitrided into alundum (Al2O3) Al
2o
3or aluminium nitride AlN insulator layer;
Step 33, form top electrode on upper N-type doping ohmic contact layer surface respectively, form bottom electrode on lower N-type doping ohmic contact layer surface.
Particularly, the epitaxial material of device is as described below.By mocvd method, first extension on semi-insulating InP substrate 6 material, successively growth lower N-type doping InGaAs ohmic contact layer 7 ' (thickness 200nm, doping content about 1 × 10
19cm
-3), lower N-type doping InP semiconductor cladding layers 8 ' (thickness 1 μm, doping content about 1 × 10
18cm
-3), undoped InGaAsP limiting layer 9 ' (light wavelength of fluorescence 1.46 μm) under the thick Lattice Matching of 50nm, without strain InGaAsP/indium phosphorus (InGaAsP/InP) multi-quantum well semiconductor sandwich layer 15(light wavelength of fluorescence 1.395 μm, 20 quantum wells: the wide 10nm of trap, light wavelength of fluorescence 1.45 μm, build wide 10nm, lattice matched materials), undoped InGaAsP limiting layer 9(light wavelength of fluorescence 1.46 μm on the thick Lattice Matching of 50nm), containing semiconductor layer and the undoped InAlAs layer 16(thickness 10nm of Al composition, not shown in the figures), upper N-type doping InP semiconductor cladding layers 8(thickness 1 μm, doping content about 1 × 10
18cm
-3), upper N-type doping InGaAs ohmic contact layer 7(thickness 200nm, doping content about 1 × 10
19cm
-3).Device adopts ridge waveguide structure, and produce ridge waveguide by the method for photoetching and dry etching, ridge is wide is 2 μm, high 2.71 μm.Next by the method for lateral oxidation, above-mentioned undoped InAlAs layer 16 is oxidized to Al
2o
316 '.Thus form InP-InGaAsP/InP-Al
2o
3the semi-conductor electricity light modulator structure of-InP.Finally, make on upper N-type doping InGaAs ohmic contact layer 7 surface and form top electrode 19, make on lower N-type doping InGaAs ohmic contact layer 7 ' surface and form bottom electrode 20.
Wherein, preferably, InGaAsP/InP multi-quantum well semiconductor sandwich layer 15 is between undoped InGaAsP limiting layer, and undoped InGaAsP limiting layer can play effect light field be limited in semiconductor core.Due to Al
2o
316 ' layer, between two N-type doping InP semiconductor cladding layers, significantly reduces the leakage current of this structure.
To sum up, analyze the electrooptic modulator optical field distribution shown in Fig. 3, research shows, the low-refraction Al of 10nm
2o
316 ' layer does not affect the distribution of light field, and light field still mainly concentrates on InGaAsP/InP multi-quantum well semiconductor sandwich layer 15, and its light restriction factor is up to 61%.
Work as Al
2o
3when 16 ' thickness is 10nm, its dividing potential drop only 0.25V during impressed voltage 2V, makes most voltage be added in semiconductor core, have also been obtained raising relative to traditional N-SI-I-N structure half-wave voltage.
As can be seen from the above embodiments, the present invention proposes a kind of N-I-O-N type structure can improving the modulating characteristic of semi-conductor electricity photomodulator, this kind of structure can make voltage effectively be carried in I district, reduces half-wave voltage.By thin insulator layer, effective stop is formed to electric current, reduce leakage current to the impact of microwave signal.
The foregoing is only preferred embodiment of the present invention, be not intended to limit protection scope of the present invention.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (11)
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