CN103681966A - Laser scribing method for Mo back electrodes of CIGS film solar modules - Google Patents
Laser scribing method for Mo back electrodes of CIGS film solar modules Download PDFInfo
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- CN103681966A CN103681966A CN201310640759.1A CN201310640759A CN103681966A CN 103681966 A CN103681966 A CN 103681966A CN 201310640759 A CN201310640759 A CN 201310640759A CN 103681966 A CN103681966 A CN 103681966A
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000010408 film Substances 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000011521 glass Substances 0.000 claims abstract description 37
- 239000010409 thin film Substances 0.000 claims abstract description 36
- 238000002360 preparation method Methods 0.000 claims description 10
- 239000005329 float glass Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 229940065287 selenium compound Drugs 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/137—Batch treatment of the devices
- H10F71/1375—Apparatus for automatic interconnection of photovoltaic cells in a module
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明涉及一种CIGS薄膜太阳能电池组件Mo背电极的激光划线方法，使用激光器对制备在玻璃衬底上的作为背电极的Mo膜进行切割，所述激光器发出的激光的入射方向为先通过所述玻璃衬底再照射在Mo膜的表面上。采用本发明，可提高CIGS薄膜太阳能电池组件的电池效率。
The invention relates to a laser scribing method for the Mo back electrode of a CIGS thin-film solar cell module. A laser is used to cut the Mo film prepared on a glass substrate as the back electrode, and the incident direction of the laser light emitted by the laser is first passing through The glass substrate was then irradiated on the surface of the Mo film. By adopting the invention, the battery efficiency of CIGS thin film solar battery modules can be improved.
Description
Technical field
The present invention relates to a kind of laser scribing technology, particularly for the laser scribe method of CIGS Thinfilm solar cell assembly Mo back electrode.
Background technology
In energy field, solar power generation is the photovoltaic effect of utilizing the semi-conducting materials such as silicon or alloy, produces electric energy, thereby can convert reproducible solar energy to free of contamination electric energy under the irradiation of light.Solar cell is directly light energy conversion to be become to the device of electric energy by photoelectric effect or Photochemical effects.Presently used solar cell comprises silicon wafer battery, thin-film solar cells etc.
Wherein, thin-film solar cells has lightweight, thin thickness, the advantage such as flexible, portable.It can overcome traditional silicon wafer battery owing to being comprised of silicon crystal, and battery major part is frangible, easily produces invisible crack, mostly has one deck toughened glass as protection, causes weight large, carries inconvenience, and shock resistance is poor, and cost is high, and efficiency such as more or less reduces at the defect.Thereby thin-film solar cells more and more receives publicity.
A kind of as thin-film solar cells, CIGS(Copper Indium Gallium Selenide) thin-film solar cells, be to take the sheet materials such as glass as substrate, the battery that sputter copper-indium-gallium-selenium compound semiconducting alloy is prepared from.Because its absorptivity is high, band gap is adjustable, with low cost, photoelectric conversion rate is high, the low light level is good, stable performance and the advantage such as radiation resistance is good, and become the emphasis of industry research and development.
At present, laser scribing technology is widely used in the preparation of CIGS Thinfilm solar cell assembly.By laser scribing by the Mo(molybdenum of CIGS Thinfilm solar cell assembly) back electrode is cut into some separate units.
Fig. 4 shows the generalized schematic of laser scribe method of the prior art.As shown in Figure 4, for the Mo film 3 being prepared in glass substrate 2, traditional laser scribing is all the positive incident cutting of laser Mo film 3., laser from a surperficial side incident that is away from glass substrate 2 of Mo film 3 so that this Mo film 3 is cut.
But find the CIGS Thinfilm solar cell assembly that adopts the laser scribe method of the prior art shown in Fig. 4 that Mo film 3 is rule and prepared with this, exist electric current or fill factor, curve factor abnormal, thereby the defect that causes Efficiency Decreasing, this is that a large amount of crateriform perks appears in the groove of the Mo that streaks due to laser incising.
By the scanning electron microscopy of Fig. 5 and the atomic force microscope of Fig. 6, demonstrate, the surface of the Mo film after ruling with the laser scribe method of the prior art shown in Fig. 4 has poor evenness.This is that the energy of laser can be scattered while cutting due to front, the cutting Mo film that energy can not be concentrated.And as shown in Figure 7, there is the edge of a large amount of crateriform perks in the groove of the Mo that laser incising streaks, the edge of this perk is easy to cause battery component partial short-circuit or electric leakage, so greatly affects the battery efficiency of CIGS Thinfilm solar cell assembly.
Summary of the invention
In order to overcome above-mentioned the deficiencies in the prior art, technical problem to be solved by this invention is to provide a kind of laser scribe method of CIGS Thinfilm solar cell assembly Mo back electrode, can improve the battery efficiency of CIGS Thinfilm solar cell assembly.
In order to solve the problems of the technologies described above, the invention provides a kind of laser scribe method of CIGS Thinfilm solar cell assembly Mo back electrode, the Mo film as back electrode in glass substrate cuts to preparation to use laser, and the incident direction of the laser that described laser sends is for to be first radiated on the surface of Mo film by described glass substrate again.
According to the present invention, due to the energy that glass substrate is comparatively smooth and can scattering laser, the laser beam of energy accumulating carries out scribing to Mo film after seeing through glass substrate.Compared with prior art, the groove that gathers like this Mo that high-octane laser beam depicts there will not be the edge of a large amount of crateriform perks, thereby can greatly promote the performance of the CIGS Thinfilm solar cell assembly of preparation thus.
Again, in the present invention, also can, described laser is solid-state laser or gas laser.
According to the present invention, adopt solid-state laser or gas laser to carry out laser scribing and can make laser grooving and scribing precision high, the level and smooth speed of delineation otch is fast.
Again, in the present invention, also can, the sharp light wavelength that described laser sends is 1064 nm or 532 nm or 355 nm or 266 nm.
According to the present invention, when delineation Mo film, choose such as the laser of above-mentioned specific wavelength and can draw Mo film and not damage substrate glass.
Again, in the present invention, also can, the average power of the laser that described laser sends is 0～20W.
According to the present invention, at laser, send the edge that can avoid the groove of the Mo film that laser incising streaks to occur a large amount of crateriform perks under the laser of above-mentioned average power.
Again, in the present invention, also can, the spot diameter of the laser that described laser sends is 10～100 μ m.
According to the present invention, the spot diameter of the laser that laser sends is that 10～100 μ m can make the groove that depicts level and smooth.
Again, in the present invention, also can, the distance of the focus of the laser that described laser sends and described Mo film is 0～10mm.
According to the present invention, the laser spot that control laser sends and the distance of described Mo film are 0～10mm, can obtain level and smooth continuous delineation groove.
Again, in the present invention, also can, the pulse frequency of the laser that described laser sends is 1KHz～200KHz.
According to the present invention, the pulse frequency of the laser that control laser sends is 1KHz～200KHz, can obtain not having the delineation groove of breakpoint.
Again, in the present invention, also can, the duty ratio of the laser that described laser sends is 0.1%～10%.
According to the present invention, the duty ratio that the laser that laser sends is set is 0.1%～10%, can obtain level and smooth continuous delineation groove.
Again, in the present invention, also can, the pulse energy of the laser that described laser sends is 10～300 μ J.
According to the present invention, the pulse energy of the laser that control laser sends is 10～300 μ J, can make Mo film obtain certain delineation degree of depth.
Again, in the present invention, also can, the surperficial angulation of the laser that described laser sends and the close described laser of described glass substrate is 60 °～90 °.
According to the present invention, the surperficial angulation of the laser that laser sends and the close laser of glass substrate is 60 °～90 ° can reduce the scattering of laser in delineation.
Again, in the present invention, also can, the surface of the close described laser of described glass substrate is 100～3000mm/s with respect to the translational speed of the laser emitting point of described laser.
According to the present invention, the surface of the close laser of control glass substrate is 100～3000mm/s with respect to the translational speed of the laser emitting point of laser, can obtain not having the delineation groove of breakpoint.
According to following embodiment and with reference to accompanying drawing, will understand better above-mentioned and other object of the present invention, feature and advantage.
Accompanying drawing explanation
Fig. 1 is the generalized schematic showing according to the laser scribe method of an example of the present invention;
The structural representation that Fig. 2 is the CIGS Thinfilm solar cell assembly that adopts the laser scribe method shown in Fig. 1 to rule to prepare;
Fig. 3 is for adopting the SEM figure of the Mo film after the laser scribe method shown in Fig. 1 is rule;
Fig. 4 is the generalized schematic that shows laser scribe method of the prior art;
Fig. 5 is for adopting the Mo film surface SEM figure after the laser scribe method shown in Fig. 4 is rule;
Fig. 6 is for adopting the Mo film surface A FM figure after the laser scribe method shown in Fig. 4 is rule;
Fig. 7 is for adopting the SEM figure of the Mo film after the laser scribe method shown in Fig. 4 is rule.
Embodiment
Below in conjunction with accompanying drawing and concrete example, technical scheme of the present invention is elaborated.
The general configuration of current applied CIGS Thinfilm solar cell assembly 1 for example can be with reference to shown in Fig. 2, possess successively from lower to upper glass substrate 2, as the Mo film 3 of back electrode, as the cigs layer 4 of light absorbing zone, there is the AZO(aluminium-doped zinc oxide of transparent conductivity) layer 5 and diagram abridged top electrode etc.
During this CIGS Thinfilm solar cell assembly 1 work, sunlight, from the top incident of top electrode, through top electrode, AZO layer 5, is absorbed and produces photo-generated carrier by cigs layer 4.The carrier separation of different electric charges under the effect of internal electric field, negative electrical charge moves towards top electrode, and positive charge moves towards back electrode 3.Transfer to endlessly can be for our electric power for solar energy thus.
As shown in Figure 2, the whole technological process of preparation CIGS Thinfilm solar cell assembly 1 is, first sputter back electrode Mo film 3 in glass substrate 2, then on this Mo film 3, by laser scribing technology, carry out P1 line, Mo film is drawn in P1 line, then prepare CIGS film 4, by the method for water-bath, on CIGS film 4, prepare CdS(cadmium sulfide), then sputter i-ZnO on CdS, then on i-ZnO, by mechanical ruling, carry out P2 line, P2 line is drawn 4 strokes of saturating CIGS films and is arrived Mo film 3 surfaces, and then plating AZO transparent conductive film 5, on this AZO transparent conductive film 5, by mechanical ruling, carry out P3 line, 4 strokes of surfaces to Mo film 3 of saturating CIGS film are drawn in P3 line.
In above-mentioned preparation process, in glass substrate 2, prepared Mo film as after back electrode 3, adopt laser scribing (as shown in the P1 in Fig. 2) that this Mo back electrode 3 is cut into some separate units.In this process, different from the method for the positive incident cutting of laser used in the prior art Mo film, according to the laser scribe method of the Mo back electrode of CIGS Thinfilm solar cell assembly of the present invention, the Mo film 3 as back electrode in glass substrate 2 cuts to preparation to use laser, and the incident direction of the laser that this laser sends is for to be first radiated on the surface of Mo film 3 by glass substrate 2 again.
Adopt the laser scribe method of the Mo back electrode of CIGS Thinfilm solar cell assembly of the present invention, due to the energy that glass substrate 2 is comparatively smooth and can scattering laser, the laser beam of energy accumulating sees through that glass substrate 2 is rear carries out scribing to Mo film 3.Compared with prior art, the groove that gathers like this Mo that high-octane laser beam depicts there will not be the edge of a large amount of crateriform perks, thereby can greatly promote the performance of the CIGS Thinfilm solar cell assembly of preparation thus.
Specifically as Fig. 1 according to as shown in the generalized schematic of laser scribe method of the present invention, for the glass substrate 2 of having prepared Mo film 3.The laser that laser (diagram omit) sends is from a side incident that is away from Mo film 3 of this glass substrate 2, is radiated on the surface of Mo film after penetrating this glass substrate 2 again., the incident direction of the laser that sends of laser is for to be first radiated on the surface of Mo film 3 by glass substrate 2 again, realizes thus the transmission-type cutting to Mo film.In addition, also as shown in Figure 1, in the side that is away from glass substrate 2 of this Mo film 3, also can there is dust exhaust apparatus 6, for use in being adsorbed on the dirt bits that produce while utilizing laser to rule to Mo film 3.
Fig. 3 is for adopting the SEM figure of the Mo film after the laser scribe method according to the present invention shown in Fig. 1 is rule.As shown in Figure 3, adopt that the groove both sides of the Mo after laser scribe method of the present invention line are level and smooth and without any perk edge, the line of such Mo is conducive to the great lifting to the performance of battery component.
In said method, glass substrate 2 can be preferably float glass.Because the surface of float glass is especially smooth, energy that more can scattering laser while utilizing this feature laser by glass substrate 2, the laser beam of energy accumulating sees through float glass delineation Mo film 3, more can not make the groove of Mo occur the edge of a large amount of crateriform perks, thereby more be conducive to promote the performance of the CIGS Thinfilm solar cell assembly of preparation thus.
Below in conjunction with Fig. 1, illustrate according to one of laser scribe method of the present invention preferred example.
First using Mo film preparation on the Float Glass Surface as glass substrate 2 to form back electrode 3.In this example, adopt solid-state laser or gas laser to send laser, can make thus laser grooving and scribing precision high, the level and smooth speed of delineation otch is fast.Before Mo film 3 is delineated, the parameter of laser can be first set: making the sharp light wavelength that this laser sends is 1064 nm or 532 nm or 355 nm or 266 nm, when delineation Mo film 3, the laser of specific wavelength can be drawn Mo film 3 and not damage substrate glass.The average power of the laser that this laser sends can be 0～20W, can avoid the groove of the Mo film 3 that laser incising streaks to occur the edge of a large amount of crateriform perks under the average power of laser 0～20W.The spot diameter of the laser that this laser sends is 10～100 μ m, can obtain thus level and smooth continuous delineation groove.The distance of the focus of the laser that this laser sends and Mo film 3 can be 0～10mm, thereby can obtain level and smooth continuous delineation groove.The pulse frequency of the laser that this laser sends can be 1KHz～200KHz, therefore can obtain not having the delineation groove of breakpoint.The duty ratio of the laser that this laser sends can be 0.1%～10%, thereby can obtain level and smooth continuous delineation groove.The pulse energy of the laser that this laser sends can be 10～300 μ J, can make thus Mo film 3 obtain certain delineation degree of depth.
With reference to the example shown in Fig. 1, plated the Mo film 3 of the float glass substrate 2 of Mo film 3 and placed down, laser is normally incident in glass substrate 2 from top.But the invention is not restricted to this, the surperficial angulation near this laser of the laser that this laser sends and this glass substrate 2 can be adjustable between 60 °～90 °, thereby can reduce the scattering of laser in delineation.In addition, the surface of the close laser of this glass substrate 2 can be 100～3000mm/s with respect to the translational speed of the laser emitting point of this laser, thereby can obtain not having the delineation groove of breakpoint.Also as shown in Figure 1, Mo film 3 bottoms also can be provided with dust exhaust apparatus 6.After all parameters and equipment set, laser sees through 2 pairs of Mo films of float glass substrate 3 and carries out laser scribing.
Do not departing under the aim of essential characteristic of the present invention, the present invention can be presented as various ways, therefore the example in the present invention is to be illustrative rather than definitive thereof, due to scope of the present invention, be defined by the claims but not limited by specification, and drop on the scope that claim defines, or all changes in the full scope of equivalents of its scope defining are all understood to include in claims.
Claims (11)
1. a laser scribe method for CIGS Thinfilm solar cell assembly Mo back electrode, comprising:
The Mo film as back electrode in glass substrate cuts to preparation to use laser, and the incident direction of the laser that described laser sends is for to be first radiated on the surface of Mo film by described glass substrate again.
2. the laser scribe method of CIGS Thinfilm solar cell assembly Mo back electrode according to claim 1, is characterized in that, described laser is solid-state laser or gas laser.
3. the laser scribe method of CIGS Thinfilm solar cell assembly Mo back electrode according to claim 1, is characterized in that, the sharp light wavelength that described laser sends is 1064 nm, 532 nm, 355 nm or 266 nm.
4. the laser scribe method of CIGS Thinfilm solar cell assembly Mo back electrode according to claim 1, is characterized in that, the average power of the laser that described laser sends is 0～20W.
5. the laser scribe method of CIGS Thinfilm solar cell assembly Mo back electrode according to claim 1, is characterized in that, the spot diameter of the laser that described laser sends is 10～100 μ m.
6. the laser scribe method of CIGS Thinfilm solar cell assembly Mo back electrode according to claim 1, is characterized in that, the distance of the focus of the laser that described laser sends and described Mo film is 0～10mm.
7. the laser scribe method of CIGS Thinfilm solar cell assembly Mo back electrode according to claim 1, is characterized in that, the pulse frequency of the laser that described laser sends is 1KHz～200KHz.
8. the laser scribe method of CIGS Thinfilm solar cell assembly Mo back electrode according to claim 1, is characterized in that, the duty ratio of the laser that described laser sends is 0.1%～10%.
9. the laser scribe method of CIGS Thinfilm solar cell assembly Mo back electrode according to claim 1, is characterized in that, the pulse energy of the laser that described laser sends is 10～300 μ J.
10. the laser scribe method of CIGS Thinfilm solar cell assembly Mo back electrode according to claim 1, is characterized in that, the laser that described laser sends and described glass substrate surface angulation are 60 °～90 °.
The laser scribe method of 11. CIGS Thinfilm solar cell assembly Mo back electrodes according to claim 1, is characterized in that, described glass substrate surface is 100～3000mm/s with respect to the translational speed of the laser emitting point of described laser.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105195900A (en) * | 2015-09-09 | 2015-12-30 | 宁波山迪光能技术有限公司 | Laser scribing method for thin-film solar cell with ultrathin glass as substrate |
| CN107919404A (en) * | 2017-12-11 | 2018-04-17 | 北京四方创能光电科技有限公司 | A kind of preparation method of thin-film solar cells light-transmitting component |
| CN115627453A (en) * | 2022-09-20 | 2023-01-20 | 西北工业大学 | Molybdenum-tungsten-sulfur alloy film on high-temperature-resistant substrate and preparation method |
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| CN115627453B (en) * | 2022-09-20 | 2024-12-20 | 西北工业大学 | Molybdenum-tungsten-sulfur alloy film on high temperature resistant substrate and preparation method thereof |
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Application publication date: 20140326 |