CN103781933B - Alloy for soft-magnetic thin-film layer on perpendicular magnetic recording medium, and sputtering-target material - Google Patents
Alloy for soft-magnetic thin-film layer on perpendicular magnetic recording medium, and sputtering-target material Download PDFInfo
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Abstract
本发明提供一种具有低矫顽力的垂直磁记录介质中的软磁性薄膜层用合金。该合金包含如下成分:选自Ti、Zr、Hf、Nb、Ta和B中的1种以上;W和Sn中的1种或2种(其中,W和Sn中的1种或2种的一部分或全部亦可被V和Mn中的1种或2种置换);根据需要而选自Al、Cr、Mo、Si、P、C和Ge中的1种以上;根据需要含有的Ni和Cu中的1种或2种;以及余量含有Co和Fe,并且以at.%计满足:(1)6≤Ti%+Zr%+Hf%+Nb%+Ta%+B%/2≤24;(2)Zr%+Hf%≤14;(3)3≤W%+Sn%≤19;(4)0.20≤Fe%/(Fe%+Co%)≤0.90;(5)3≤W%+Sn%+V%+Mn%≤19(其中,V%+Mn%可以为0);(6)0≤Al%+Cr%+Mo%+Si%+P%+C%+Ge%≤9和(7)0≤Ni%+Cu%≤5。The invention provides an alloy for a soft magnetic film layer in a perpendicular magnetic recording medium with low coercive force. The alloy contains the following components: one or more selected from Ti, Zr, Hf, Nb, Ta and B; one or two of W and Sn (wherein, a part of one or two of W and Sn Or all of them may be replaced by one or two of V and Mn); if necessary, one or more selected from Al, Cr, Mo, Si, P, C and Ge; 1 or 2 kinds; and the balance contains Co and Fe, and satisfies in at.%: (1) 6≤Ti%+Zr%+Hf%+Nb%+Ta%+B%/2≤24; (2) Zr%+Hf%≤14; (3)3≤W%+Sn%≤19; (4)0.20≤Fe%/(Fe%+Co%)≤0.90; (5)3≤W%+ Sn%+V%+Mn%≤19 (wherein, V%+Mn% can be 0); (6) 0≤Al%+Cr%+Mo%+Si%+P%+C%+Ge%≤9 and (7) 0≤Ni%+Cu%≤5.
Description
关联申请的相互参考Cross-reference of related applications
本申请基于2011年8月17日提出申请的日本国专利申请2011-178187号要求优先权,其全部的公开内容作为参考并入本说明书。This application claims priority based on Japanese Patent Application No. 2011-178187 for which it applied on August 17, 2011, The entire disclosure content is taken in this specification as a reference.
技术领域technical field
本发明涉及具有低矫顽力的垂直磁记录介质中的软磁性薄膜层用合金和用于制作该合金的薄膜的溅射靶材。The invention relates to an alloy for a soft magnetic thin film layer in a perpendicular magnetic recording medium with low coercive force and a sputtering target material for making the thin film of the alloy.
背景技术Background technique
近年,磁记录技术的进步显著,为了实现驱动装置的大容量化,磁记录介质的高记录密度化已经取得进展,能够实现比现有普及的面内磁记录介质更高的记录密度,垂直磁记录方式正在被实用化。In recent years, the progress of magnetic recording technology has been remarkable. In order to realize the large capacity of the drive device, the high recording density of the magnetic recording medium has been progressed. The recording method is being practical.
所谓垂直磁记录方式是使易磁化轴以沿相对于垂直磁记录介质的磁性膜中的介质面的垂直方向取向的方式形成的磁记录方式,是达到了高记录密度的方法。并且,在垂直磁记录方式中,已开发具有提高了记录灵敏度的磁记录膜层和软磁性膜层的2层记录介质。在该磁记录膜层中通常使用CoCrPt-SiO2系合金。The so-called perpendicular magnetic recording method is a magnetic recording method in which the easy axis of magnetization is oriented in a direction perpendicular to the medium surface of the magnetic film of the perpendicular magnetic recording medium, and is a method that achieves high recording density. Furthermore, in the perpendicular magnetic recording system, a two-layer recording medium having a magnetic recording film layer and a soft magnetic film layer having improved recording sensitivity has been developed. A CoCrPt-SiO 2 -based alloy is generally used for this magnetic recording film layer.
另一方面,现有的软磁性膜层需要铁磁性和非晶性,进而根据垂直磁记录介质的用途、使用环境,而额外要求高饱和磁通密度、高耐蚀性、高硬度等各种特性。例如,如日本特开2008-260970号公报(专利文献1)那样,使用了以耐蚀性高的铁磁性元素Co作为基体、且为了提高非晶性而添加了以Zr为代表的非晶促进元素的膜层。另外,在日本特开2008-299905号公报(专利文献2)中,通过添加Fe而得到高的饱和磁通密度,并通过添加B而得到高的硬度。On the other hand, the existing soft magnetic film layer requires ferromagnetism and non-crystallinity, and further requires high saturation magnetic flux density, high corrosion resistance, high hardness, etc. according to the application and use environment of the perpendicular magnetic recording medium. characteristic. For example, as in Japanese Unexamined Patent Application Publication No. 2008-260970 (Patent Document 1), a ferromagnetic element Co with high corrosion resistance is used as a matrix, and an amorphous promoter represented by Zr is added in order to improve amorphousness. Elemental layer. In addition, in JP 2008-299905 A (Patent Document 2), a high saturation magnetic flux density is obtained by adding Fe, and a high hardness is obtained by adding B.
进而,除一直以来要求的上述特性以外,还要求其成为具有低矫顽力的软磁性膜用合金。近年的硬盘驱动通过读写用磁头的改良、调整软磁性合金的磁通密度使软磁性膜和Ru膜的交换耦合磁场最优化,由此能够以比以往更低的磁通来写入。相对于此,就配置于记录膜之下的软磁性膜而言,与以高的写入磁通而饱和的高饱和磁通密度相比,用较低的写入磁通也能够使磁化反转,从而有效地形成低矫顽力。Furthermore, in addition to the above-mentioned characteristics that have been required so far, it is also required to be an alloy for soft magnetic films having a low coercive force. In recent hard disk drives, by improving the magnetic head for reading and writing and adjusting the magnetic flux density of the soft magnetic alloy to optimize the exchange coupling magnetic field between the soft magnetic film and the Ru film, it is possible to write with a lower magnetic flux than before. On the other hand, in the soft magnetic film disposed under the recording film, the magnetization can be reversed even with a lower write magnetic flux than a high saturation magnetic flux density saturated with a high write magnetic flux. turn, thereby effectively forming a low coercive force.
现有技术文献prior art literature
专利文献patent documents
专利文献1:日本特开2008-260970号公报Patent Document 1: Japanese Patent Laid-Open No. 2008-260970
专利文献2:日本特开2008-299905号公报Patent Document 2: Japanese Patent Laid-Open No. 2008-299905
发明内容Contents of the invention
本发明人等此次针对合金元素对垂直磁记录介质的软磁性膜用合金的矫顽力的影响详细地进行了研究,其结果发现:通过添加适量的W和/或Sn而得到显示低矫顽力的软磁性合金。另外,发现作为使矫顽力降低的辅助性的添加元素,V和/或Mn是有效的。此外,还明确了一直以来使用的非晶化促进元素即Zr和/或Hf的过量添加使矫顽力增大。The inventors of the present invention conducted a detailed study on the influence of alloying elements on the coercive force of the alloy for soft magnetic films of perpendicular magnetic recording media. Coercive soft magnetic alloy. In addition, it was found that V and/or Mn are effective as auxiliary additive elements for reducing the coercive force. In addition, it has also been clarified that excessive addition of Zr and/or Hf, which are conventionally used amorphization promoting elements, increases the coercive force.
此外,本发明中最重要的特征虽然在后述的实施例中也可以明确,但对各种添加元素详细地评价了相对于饱和磁通密度的降低量的矫顽力的降低效果,发现W和/或Sn具有最高的效果。此外,还明确了仅次于W和/或Sn的V和/或Mn的矫顽力降低效果也较高。In addition, although the most important feature of the present invention can also be clarified in the examples described later, the effect of reducing the coercive force with respect to the amount of reduction of the saturation magnetic flux density was evaluated in detail for various additive elements, and it was found that W and/or Sn have the highest effect. In addition, it is also clear that V and/or Mn, next to W and/or Sn, have a high coercive force reducing effect.
因此,本发明的目的在于提供具有低矫顽力的垂直磁记录介质中的软磁性薄膜层用合金和用于制作该合金的薄膜的溅射靶材。Therefore, an object of the present invention is to provide an alloy for a soft magnetic thin film layer in a perpendicular magnetic recording medium having a low coercive force and a sputtering target for producing a thin film of the alloy.
根据本发明的一个实施方式,提供一种合金,其是垂直磁记录介质中的软磁性薄膜层用合金,所述合金包含如下成分:According to one embodiment of the present invention, a kind of alloy is provided, and it is the alloy for soft magnetic film layer in perpendicular magnetic recording medium, and described alloy comprises following composition:
-选自Ti、Zr、Hf、Nb、Ta和B中的1种以上;- one or more selected from Ti, Zr, Hf, Nb, Ta and B;
-W和Sn中的1种或2种(其中,W和Sn中的1种或2种的一部分或全部亦可被V和Mn中的1种或2种置换);- 1 or 2 of W and Sn (wherein, a part or all of 1 or 2 of W and Sn can also be replaced by 1 or 2 of V and Mn);
-根据需要而选自Al、Cr、Mo、Si、P、C和Ge中的1种以上;- One or more selected from Al, Cr, Mo, Si, P, C and Ge as needed;
-根据需要含有的Ni和Cu中的1种或2种;以及- 1 or 2 kinds of Ni and Cu contained as needed; and
-余量含有Co和Fe,- the balance contains Co and Fe,
并且,以at.%计满足下式:And, in terms of at.%, satisfy the following formula:
(1)6≤Ti%+Zr%+Hf%+Nb%+Ta%+B%/2≤24;(1) 6≤Ti%+Zr%+Hf%+Nb%+Ta%+B%/2≤24;
(2)Zr%+Hf%≤14;(2) Zr%+Hf%≤14;
(3)3≤W%+Sn%≤19;(3) 3≤W%+Sn%≤19;
(4)0.20≤Fe%/(Fe%+Co%)≤0.90;(4) 0.20≤Fe%/(Fe%+Co%)≤0.90;
(5)3≤W%+Sn%+V%+Mn%≤19(其中,V%+Mn%可以为0);(5) 3≤W%+Sn%+V%+Mn%≤19 (wherein, V%+Mn% can be 0);
(6)0≤Al%+Cr%+Mo%+Si%+P%+C%+Ge%≤9;和(6) 0≤Al%+Cr%+Mo%+Si%+P%+C%+Ge%≤9; and
(7)0≤Ni%+Cu%≤5。(7) 0≤Ni%+Cu%≤5.
根据本发明的另一实施方式,提供包含上述合金的溅射靶材。According to another embodiment of the present invention, there is provided a sputtering target comprising the alloy described above.
具体实施方式detailed description
下面具体地说明本发明。只要没有特别的说明,在本说明书中“%”或无单位的数字表示at%。The present invention will be specifically described below. Unless otherwise specified, "%" or a number without a unit means at% in this specification.
本发明提供垂直磁记录介质中的软磁性薄膜层用合金,该合金包含(comprising)如下成分:选自Ti、Zr、Hf、Nb、Ta和B中的1种以上;W和Sn中的1种或2种(其中,W和Sn中的1种或2种的一部分或全部亦可被V和Mn中的1种或2种置换);根据需要(optionally)而选自Al、Cr、Mo、Si、P、C和Ge中的1种以上;根据需要(optionally)含有的Ni和Cu中的1种或2种;以及余量含有Co和Fe,优选实质上仅由这些元素构成(consisting essentially of),更优选仅由这些元素构成(consisting of)。并且,本发明的合金以at.%计满足下式:The invention provides an alloy for a soft magnetic thin film layer in a perpendicular magnetic recording medium, the alloy comprising (comprising) the following components: one or more selected from Ti, Zr, Hf, Nb, Ta and B; one or more of W and Sn One or two kinds (wherein, a part or all of one or two of W and Sn can also be replaced by one or two of V and Mn); optionally selected from Al, Cr, Mo 1 or more of Si, P, C, and Ge; optionally 1 or 2 of Ni and Cu; and the balance contains Co and Fe, preferably consisting essentially of only these elements (consisting essentially of), more preferably consist of only these elements (consisting of). And, the alloy of the present invention satisfies the following formula in at.%:
(1)6≤Ti%+Zr%+Hf%+Nb%+Ta%+B%/2≤24;(1) 6≤Ti%+Zr%+Hf%+Nb%+Ta%+B%/2≤24;
(2)Zr%+Hf%≤14;(2) Zr%+Hf%≤14;
(3)3≤W%+Sn%≤19;(3) 3≤W%+Sn%≤19;
(4)0.20≤Fe%/(Fe%+Co%)≤0.90;(4) 0.20≤Fe%/(Fe%+Co%)≤0.90;
(5)3≤W%+Sn%+V%+Mn%≤19(其中V%+Mn%可以为0);(5) 3≤W%+Sn%+V%+Mn%≤19 (wherein V%+Mn% can be 0);
(6)0≤Al%+Cr%+Mo%+Si%+P%+C%+Ge%≤9;和(6) 0≤Al%+Cr%+Mo%+Si%+P%+C%+Ge%≤9; and
(7)0≤Ni%+Cu%≤5。(7) 0≤Ni%+Cu%≤5.
下面,叙述本发明的成分组成的限定理由。Next, reasons for limiting the component composition of the present invention will be described.
选自Ti、Zr、Hf、Nb、Ta和B中的1种以上是用于促进非晶化的必须元素,以满足6≤Ti%+Zr%+Hf%+Nb%+Ta%+B%/2≤24的量包含于合金中。另外,B与其它的元素相比,非晶化促进效果和饱和磁通密度的降低效果约为1/2,因此在该式中以B/2来处理。另外,若Ti%+Zr%+Hf%+Nb%+Ta%+B%/2不足6,则非晶化促进效果不充分,若超过24,则非晶化促进效果达到饱和,并且饱和磁通密度过度降低,因此其范围是6~24,优选8~18,更优选9~14。One or more elements selected from Ti, Zr, Hf, Nb, Ta, and B are essential elements for promoting amorphization to satisfy 6≤Ti%+Zr%+Hf%+Nb%+Ta%+B% The amount of /2≤24 is contained in the alloy. In addition, B has an amorphization promoting effect and a saturation magnetic flux density reducing effect of about 1/2 compared with other elements, so it is treated as B/2 in this formula. In addition, if Ti%+Zr%+Hf%+Nb%+Ta%+B%/2 is less than 6, the amorphization promotion effect is insufficient, and if it exceeds 24, the amorphization promotion effect is saturated, and the magnetic saturation is saturated. Flux density decreases excessively, so its range is 6-24, preferably 8-18, more preferably 9-14.
Zr和/或Hf虽然是非晶化促进效果高的元素,但同时会使矫顽力增大。若Zr%+Hf%超过14,则矫顽力会增大,因此其上限为14(即Zr%+Hf%≤14),优选12,更优选8。Although Zr and/or Hf are elements with a high effect of promoting amorphization, they increase the coercive force at the same time. If Zr%+Hf% exceeds 14, the coercive force will increase, so the upper limit is 14 (ie Zr%+Hf%≤14), preferably 12, more preferably 8.
W和/或Sn是用于相对于饱和磁通密度的降低比例而提高矫顽力的降低效果的必须元素,是本发明中最重要的添加元素。但是,若W%+Sn%的添加量不足3%则矫顽力的降低效果不充分,另外,若超过19%则效果达到饱和,饱和磁通密度过度地降低,因此其范围为3~19(即3≤W%+Sn%≤19),优选4~17,更优选6~14。另外,关于该高的矫顽力降低效果的详细原理尚不明确,但可预测是影响了饱和磁致伸缩常数的降低。W and/or Sn are essential elements for increasing the coercivity reduction effect relative to the reduction ratio of the saturation magnetic flux density, and are the most important addition elements in the present invention. However, if the added amount of W%+Sn% is less than 3%, the effect of reducing the coercive force will be insufficient, and if it exceeds 19%, the effect will be saturated, and the saturation magnetic flux density will be excessively reduced, so the range is 3 to 19%. (ie 3≤W%+Sn%≤19), preferably 4-17, more preferably 6-14. In addition, the detailed mechanism of this high coercive force lowering effect is not clear, but it is expected to affect the lowering of the saturation magnetostriction constant.
Co和Fe是用于使其具有高的饱和磁通密度的必须元素。但是,若Fe%/(Fe%+Co%)不足0.20或超过0.90,则不能得到高的饱和磁通密度。因此,Fe%/(Fe%+Co%)的范围为0.20~0.90,优选0.25~0.70,更优选0.30~0.65。Co and Fe are essential elements for giving it a high saturation magnetic flux density. However, if Fe%/(Fe%+Co%) is less than 0.20 or exceeds 0.90, a high saturation magnetic flux density cannot be obtained. Therefore, the range of Fe%/(Fe%+Co%) is 0.20 to 0.90, preferably 0.25 to 0.70, more preferably 0.30 to 0.65.
V和/或Mn是仅次于W和/或Sn的有效降低矫顽力的元素,能够与W和/或Sn中的一部分或全部置换。但是,若W%+Sn%+V%+Mn%不足3,则矫顽力的降低效果不充分,另一方面,若超过19,则矫顽力降低效果达到饱和,饱和磁通密度过度地降低。因此,W%+Sn%+V%+Mn%的范围为3~19,优选4~17,更优选6~14。V and/or Mn are elements second only to W and/or Sn in effectively lowering the coercive force, and can be substituted with part or all of W and/or Sn. However, if W%+Sn%+V%+Mn% is less than 3, the effect of reducing the coercive force will be insufficient. On the other hand, if it exceeds 19, the effect of reducing the coercive force will be saturated, and the saturation magnetic flux density will be excessively low. reduce. Therefore, the range of W%+Sn%+V%+Mn% is 3-19, preferably 4-17, more preferably 6-14.
选自Al、Cr、Mo、Si、P、C和Ge中的1种以上对矫顽力的降低不会有大的影响,但其是能够用于饱和磁通密度的调整而添加的任意元素。但是,若其合计量超过9%,则饱和磁通密度过度地降低,因此Al%+Cr%+Mo%+Si%+P%+C%+Ge%的上限为9,优选为4,更优选为0。One or more elements selected from Al, Cr, Mo, Si, P, C, and Ge will not have a great influence on the reduction of the coercive force, but it is an arbitrary element that can be added for adjustment of the saturation magnetic flux density . However, if the total amount exceeds 9%, the saturation magnetic flux density will decrease excessively, so the upper limit of Al%+Cr%+Mo%+Si%+P%+C%+Ge% is 9, preferably 4, more preferably Preferably 0.
Ni和/或Cu是能够用于饱和磁通密度的调整而添加的任意元素。但是,由于会使矫顽力增加,因此其上限为5%(即Ni%+Cu%≤5),优选为3,更优选为0。Ni and/or Cu are arbitrary elements that can be added for adjustment of the saturation magnetic flux density. However, since the coercive force will increase, the upper limit is 5% (ie Ni%+Cu%≤5), preferably 3, and more preferably 0.
实施例Example
下面,通过实施例对本发明具体地说明。Hereinafter, the present invention will be specifically described by way of examples.
通常,垂直磁记录介质中的软磁性薄膜层是溅射与其成分相同的成分的溅射靶材,并在玻璃基板等之上成膜而得到的。在此通过溅射而成膜的薄膜被急冷。与此相对,作为本发明中的实施例和比较例的供试材料,使用利用单辊式的液体急冷装置制作的急冷薄带。此处利用液体急冷薄带简易地评价实际上利用溅射而急冷并成膜的薄膜的成分对诸多特性的影响。Generally, a soft magnetic thin film layer in a perpendicular magnetic recording medium is obtained by sputtering a sputtering target having the same composition as that, and forming a film on a glass substrate or the like. Here, the thin film formed by sputtering is rapidly cooled. On the other hand, as the test materials of Examples and Comparative Examples in the present invention, quenched ribbons produced by a single-roll liquid quenching device were used. Here, the effect of the composition of the thin film actually quenched by sputtering and formed into a film on various characteristics is evaluated simply by using a liquid quenched ribbon.
作为急冷薄带的制作条件,将按规定的成分称量的原料30g利用直径10mm、长度40mm左右的水冷铜铸模在减压氩气中进行电弧熔解,制成急冷薄带的熔解母材。关于急冷薄带的制作条件,以单辊方式在直径15mm的石英管中放置该熔解母材,将出炉(日文:出湯)喷嘴直径设为1mm,在环境气压61kPa、喷雾压差69kPa、铜辊(直径300mm)的转速3000rpm、铜辊和出炉喷嘴的间隙0.3mm的条件下进行出炉。出炉温度为各熔解母材刚熔化(日文:溶け落)不久的温度。将这样制作的急冷薄带作为供试材料,评价了以下的项目。As the production conditions of the quenched ribbon, 30 g of the raw material weighed according to the specified composition is arc-melted in a decompressed argon gas using a water-cooled copper mold with a diameter of 10 mm and a length of about 40 mm to make the melted base material of the quenched ribbon. Regarding the production conditions of the quenched ribbon, the molten base material is placed in a quartz tube with a diameter of 15 mm in a single roll method, and the diameter of the furnace (Japanese: 出汤) nozzle is set to 1 mm. Tapping was carried out under conditions of a rotational speed of 3000 rpm (300 mm in diameter) and a gap of 0.3 mm between the copper roll and the tapping nozzle. The furnace temperature is the temperature at which each molten base metal has just melted (Japanese: 银け流). The quenched ribbon produced in this way was used as a test material, and the following items were evaluated.
作为相对于饱和磁通密度降低量的矫顽力降低效果的评价,利用振动试样型的矫顽力计,在试样台上用双面胶粘贴急冷带,利用初期外加磁场144kA/m来测定矫顽力。接着,利用VSM装置(振动试样型磁力计)在外加磁场1200kA/m、供试材料的重量15mg左右条件下测定饱和磁通密度。根据这些测定结果,通过各种元素的添加前和添加后的矫顽力的降低量和饱和磁通密度的降低量的比[(矫顽力的降低量)/(饱和磁通密度的降低量)]来评价。因此,该值越大,表示越能够以少的饱和磁通密度降低量得到大的矫顽力降低效果。As an evaluation of the coercive force reduction effect relative to the decrease in saturation magnetic flux density, using a vibrating sample type coercive force meter, a quenching tape was attached to the sample stand with double-sided tape, and an initial external magnetic field of 144kA/m was used. to measure coercive force. Next, the saturation magnetic flux density was measured using a VSM device (vibrating sample magnetometer) under the conditions of an applied magnetic field of 1200 kA/m and a weight of the test material of about 15 mg. From these measurement results, the ratio of the decrease in coercive force to the decrease in saturation magnetic flux density before and after the addition of various elements [(decrease in coercive force)/(decrease in saturation magnetic flux density )] to evaluate. Therefore, a larger value indicates that a greater coercive force reduction effect can be obtained with a smaller saturation magnetic flux density reduction.
另一方面,作为急冷薄带的非晶性的评价,通常在测定非晶材料的X射线衍射图样时,观察不到衍射峰,而成为非晶特有的光晕图样(hal pattern)。另外,在不是完全的非晶的情况下,虽然能观察到衍射峰,但与单结晶材料相比峰高变低,并且也能观察到光晕图样。因此,利用以下的方法评价非晶性。On the other hand, as an evaluation of the amorphousness of the quenched ribbon, when the X-ray diffraction pattern of an amorphous material is generally measured, no diffraction peaks are observed and a halo pattern peculiar to amorphous is obtained. In addition, when not completely amorphous, although diffraction peaks can be observed, the peak height becomes lower than that of a single crystal material, and a halo pattern can also be observed. Therefore, the amorphousness was evaluated by the following method.
在玻璃板用双面胶粘贴供试材料,利用X射线衍射装置得到衍射图样。此时,以使测定面成为急冷薄带的铜辊接触面的方式将供试材料粘贴于玻璃板。在X射线源为Cu-kα射线、扫描速度为每分钟4。的条件下进行测定。以该衍射图样中能够确认光晕图样的情况为为○、完全观察不到光晕图样的情况为×,来评价非晶性。首先,选定2种基本组成,分别添加一定量的添加元素,对基于添加元素种类的矫顽力降低效果进行研究。其结果示于表1和2中。The test material was pasted on the glass plate with double-sided tape, and the diffraction pattern was obtained by using an X-ray diffraction device. At this time, the test material was pasted on the glass plate so that the measurement surface would be the surface in contact with the copper roll of the quenched ribbon. The X-ray source is Cu-kα ray, and the scanning speed is 4 per minute. measured under the conditions. In this diffraction pattern, the case where a halo pattern can be observed is marked as ◯, and the case where no halo pattern is observed is marked as x, and the amorphousness was evaluated. First, two basic compositions were selected, a certain amount of additional elements were added respectively, and the coercive force reduction effect based on the type of added elements was studied. The results are shown in Tables 1 and 2.
[表1][Table 1]
表1Table 1
注)※:负号表示由于添加元素而矫顽力增加的组成Note) ※: A minus sign indicates a composition in which the coercive force increases due to the addition of elements
表1表示了以86(50Co50Fe)-8Zr-6B为基本组成的添加元素种类的影响(在添加量一定时的评价)。另外,该符号表示43Co-43Fe-8Zr-6B。Table 1 shows the effect of the type of added element with 86(50Co50Fe)-8Zr-6B as the basic composition (evaluation when the added amount is constant). In addition, this symbol represents 43Co-43Fe-8Zr-6B.
【表2】【Table 2】
[表2][Table 2]
表2Table 2
注)※:负号表示由于添加元素而矫顽力增加的组成Note) ※: A minus sign indicates a composition in which the coercive force increases due to the addition of elements
表2表示了以87(35Co65Fe)-3Ti-5Zr-3Nb-2Ta为基本组成的添加元素种类的影响(在添加量一定时的评价)。另外,该符号表示30.45Co-56.55Fe-3Ti-5Zr-3Nb-2Ta。Table 2 shows the effect of the type of added element with 87(35Co65Fe)-3Ti-5Zr-3Nb-2Ta as the basic composition (evaluation when the added amount is constant). In addition, this symbol represents 30.45Co-56.55Fe-3Ti-5Zr-3Nb-2Ta.
如表1所示,W和/或Sn的添加最有效地使矫顽力降低,其次,V和/或Mn的添加是有效的。另外,Cr、Mo、Al、C、Si、P和/或Ge的添加不能够使矫顽力较大幅度地变化。此外,可知Ni和/或Cu的添加导致矫顽力大幅增大。另外,在表2中也显示了与表1完全相同的效果,W和/或Sn的添加最有效地使矫顽力降低,其次,V和/或Mn的添加是有效的。另外,Cr、Mo、Al、C、Si、P和/或Ge的添加不能够使矫顽力较大幅度地变化。此外,可知Ni和/或Cu的添加会使矫顽力大幅增大。As shown in Table 1, the addition of W and/or Sn is the most effective in reducing the coercive force, followed by the addition of V and/or Mn is effective. In addition, the addition of Cr, Mo, Al, C, Si, P, and/or Ge cannot significantly change the coercive force. In addition, it can be seen that the addition of Ni and/or Cu significantly increases the coercive force. In addition, Table 2 also shows exactly the same effect as Table 1. The addition of W and/or Sn is the most effective in reducing the coercive force, and the addition of V and/or Mn is second most effective. In addition, the addition of Cr, Mo, Al, C, Si, P, and/or Ge cannot significantly change the coercive force. In addition, it was found that the addition of Ni and/or Cu significantly increases the coercive force.
由表1和2中所示的试验结果可知,矫顽力的降低效果为(W、Sn)>(V、Mn)>(Cr、Mo、Al、C、Si、P、Ge)>(Ni、Cu),W、Sn、V和/或Mn使矫顽力降低,Cr、Mo、Al、C、Si、P和/或Ge使矫顽力的变化较小,Ni和/或Cr会使矫顽力大幅增大。由该结果可知,本发明中的添加的上限量的顺序规定为(W、Sn)=(V、Mn)>(Cr、Mo、Al、C、Si、P、Ge)>(Ni、Cu),特别是增加矫顽力的不利影响较大的Ni和/或Cu的添加量上限需要严格控制。From the test results shown in Tables 1 and 2, it can be seen that the reduction effect of coercive force is (W, Sn)>(V, Mn)>(Cr, Mo, Al, C, Si, P, Ge)>(Ni , Cu), W, Sn, V and/or Mn reduce the coercivity, Cr, Mo, Al, C, Si, P and/or Ge make the change of coercivity small, Ni and/or Cr will make The coercive force is greatly increased. From this result, it can be seen that the order of the upper limit of addition in the present invention is defined as (W, Sn)=(V, Mn)>(Cr, Mo, Al, C, Si, P, Ge)>(Ni, Cu) , especially the upper limit of Ni and/or Cu, which has a greater adverse effect on increasing the coercive force, needs to be strictly controlled.
[表3][table 3]
表3table 3
注)下划线在本发明条件之外Note) The underline is outside the conditions of the present invention
接着,为了定量地研究各元素的添加量的上限值,制作各种基本成分的供试材料和向其中以各种量添加各种元素的供试材料,进行了矫顽力、饱和磁通密度、非晶性和饱和磁通密度的试验。其结果示于表3中。Next, in order to quantitatively study the upper limit of the addition amount of each element, test materials with various basic components and test materials with various elements added to them were produced, and the coercive force, saturation magnetic flux Density, amorphous and saturation flux density tests. The results are shown in Table 3.
在此,在表3中,添加元素与基本成分(Co+Fe)置换。即,表3的No.1的基本成分表示为72.8Co-18.2Fe-8Zr-1Ta,No.1的加入了添加元素的成分表示为70.4Co-17.6Fe-8Zr-1Ta-3W。另外,预测到Co和Fe的比率对矫顽力有影响,本试验的目的是纯粹地明确添加元素对矫顽力的影响,因此在固定了Co和Fe的比率和其它的基本成分的量的组成的前提下实施评价。因此成为这样的表述。Here, in Table 3, the additive elements are substituted with the basic components (Co+Fe). That is, the basic composition of No. 1 in Table 3 is shown as 72.8Co-18.2Fe-8Zr-1Ta, and the composition of No. 1 with additional elements added is shown as 70.4Co-17.6Fe-8Zr-1Ta-3W. In addition, it is predicted that the ratio of Co and Fe has an influence on the coercive force. The purpose of this experiment is to clarify the influence of the added elements on the coercive force purely. Therefore, the ratio of Co and Fe and the amount of other basic components are fixed. The evaluation is carried out under the premise of composition. Hence the expression.
另外,在表3中,矫顽力降低量和饱和磁通密度降低量表示从各基本成分的供试材料的矫顽力和饱和磁通密度到加入了各添加元素的供试材料的矫顽力和饱和磁通密度的降低量,另外,非晶性和饱和磁通密度的评价表示加入了添加元素的供试材料的特性。此外,[矫顽力降低量(A/m)]/[饱和磁通密度降低量(T)]为15以上的情况设为◎,8以上且小于15的情况设为○,-7以上且小于8的情况设为△,小于-8的情况设为×。此外,饱和磁通密度为0.3T以上的情况设为○,小于0.3T的情况设为×。In addition, in Table 3, the decrease in coercive force and the decrease in saturation magnetic flux density represent the range from the coercive force and saturation magnetic flux density of the test material with each basic component to the coercive force and saturation magnetic flux density of the test material with each additional element added. The reduction in force and saturation magnetic flux density, and the evaluation of amorphousness and saturation magnetic flux density represent the characteristics of the test material to which the additive element was added. In addition, the case where [coercive force decrease (A/m)]/[saturation magnetic flux density decrease (T)] is 15 or more is set as ◎, 8 or more and less than 15 is set as ○, -7 or more and The case of less than 8 was made into Δ, and the case of less than -8 was made into x. In addition, the case where the saturation magnetic flux density was 0.3T or more was made into (circle), and the case of less than 0.3T was made into x.
如表3所示,No.1~27是本发明例,No.28~40是比较例。比较例No.28中,因为Fe含量低,所以饱和磁通密度差。另外,比较例No.29中,因为不含有Co,所以饱和磁通密度差。比较例No.30中,因为促进低矫顽力的元素W的含量低,所以矫顽力降低效果不充分。比较例No.31中,因为促进矫顽力降低的元素Sn的含量低,所以矫顽力降低效果不充分。As shown in Table 3, Nos. 1 to 27 are examples of the present invention, and Nos. 28 to 40 are comparative examples. In Comparative Example No. 28, since the Fe content was low, the saturation magnetic flux density was poor. In addition, in Comparative Example No. 29, since Co was not contained, the saturation magnetic flux density was inferior. In Comparative Example No. 30, since the content of W, an element promoting low coercive force, was low, the coercive force lowering effect was insufficient. In Comparative Example No. 31, since the content of Sn, an element that promotes the reduction of the coercive force, was low, the effect of reducing the coercive force was insufficient.
比较例No.32中,因为促进低矫顽力的元素W的含量多,所以饱和磁通密度差。比较例No.33中,因为促进非晶的元素Hf的单独元素的含量低,所以非晶性差,因此矫顽力高至超过所使用的测定器的可评价范围。另外,通常已知在非晶相中生成大量的结晶相时矫顽力会显著增大。比较例No.34中,因为促进非晶的元素Zr和Ta、B/2含量之和高,所以饱和磁通密度差。比较例No.35中,因为促进非晶并且导致矫顽力增大的元素Zr和Hf含量之和高,所以矫顽力降低效果不充分。In Comparative Example No. 32, since the content of the element W that promotes low coercive force is large, the saturation magnetic flux density is poor. In Comparative Example No. 33, since the content of the single element Hf, which promotes amorphousness, was low, the amorphous property was poor, and the coercive force was so high that it exceeded the evaluable range of the measuring device used. In addition, it is generally known that the coercivity increases remarkably when a large amount of crystalline phases are formed in the amorphous phase. In Comparative Example No. 34, since the sum of the contents of Zr, Ta, and B/2, which promotes amorphousness, is high, the saturation magnetic flux density is poor. In Comparative Example No. 35, since the sum of the contents of Zr and Hf, elements that promote amorphousness and cause an increase in coercive force, is high, the coercive force lowering effect is insufficient.
比较例No.36中,因为促进低矫顽力的元素W、V、Mn含量之和高,所以饱和磁通密度差。比较例No.37中,因为促进低矫顽力的元素V、Mn含量之和高,所以饱和磁通密度差。比较例No.38中,因为用于饱和磁通密度的调整的元素Al、Cr、Si含量之和高,所以饱和磁通密度差。比较例No.39中,因为Cu元素的含量高,所以矫顽力降低效果差。比较例No.40中,因为Ni元素的含量高,所以矫顽力降低效果差。In Comparative Example No. 36, since the sum of the contents of W, V, and Mn, elements promoting low coercive force, was high, the saturation magnetic flux density was poor. In Comparative Example No. 37, since the sum of the contents of V and Mn, elements promoting low coercive force, was high, the saturation magnetic flux density was poor. In Comparative Example No. 38, since the sum of the contents of the elements Al, Cr, and Si used for adjustment of the saturation magnetic flux density is high, the saturation magnetic flux density is poor. In Comparative Example No. 39, since the Cu element content was high, the effect of reducing the coercive force was poor. In Comparative Example No. 40, since the content of the Ni element was high, the effect of reducing the coercive force was poor.
如上所述,根据本发明,提供由于特别地添加促进低矫顽力的元素W、Sn、V、Mn,而不会使饱和磁通密度、非晶性劣化,能够实现低矫顽力的饱和磁通密度、非晶性、低矫顽力的平衡优异的垂直磁记录介质中的软磁性薄膜层用合金和用于制作该合金的薄膜的溅射靶材。As described above, according to the present invention, it is possible to achieve saturation with low coercive force without deteriorating saturation magnetic flux density and amorphousness due to the addition of elements W, Sn, V, and Mn that promote low coercive force. An alloy for a soft magnetic thin film layer in a perpendicular magnetic recording medium having an excellent balance of magnetic flux density, amorphousness, and low coercive force, and a sputtering target for producing a thin film of the alloy.
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| TWI602940B (en) * | 2014-06-11 | 2017-10-21 | 光洋應用材料科技股份有限公司 | Soft-magnetic sputtering target and soft-magnetic sputtering material |
| AT14576U1 (en) | 2014-08-20 | 2016-01-15 | Plansee Se | Metallization for a thin film device, method of making the same and sputtering target |
| CN106029943B (en) * | 2014-09-04 | 2018-08-31 | 捷客斯金属株式会社 | Sputtering target |
| TWI646208B (en) * | 2015-02-26 | 2019-01-01 | 光洋應用材料科技股份有限公司 | Amorphous soft-magnetic target and material |
| TWI619817B (en) * | 2016-10-26 | 2018-04-01 | 光洋應用材料科技股份有限公司 | Co-Fe-Nb-based Sputtering Target |
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| JP4953082B2 (en) * | 2006-10-10 | 2012-06-13 | 日立金属株式会社 | Co-Fe-Zr alloy sputtering target material and method for producing the same |
| JP2008189996A (en) * | 2007-02-05 | 2008-08-21 | Hitachi Metals Ltd | Co-Fe-BASED ALLOY SPUTTERING TARGET MATERIAL AND METHOD FOR PRODUCING THE SAME |
| JP5253781B2 (en) * | 2007-09-18 | 2013-07-31 | 山陽特殊製鋼株式会社 | Alloy target material for soft magnetic film layer in perpendicular magnetic recording media |
| JP2010111943A (en) * | 2008-10-10 | 2010-05-20 | Hitachi Metals Ltd | Method for producing sputtering target material |
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| CN102149836A (en) * | 2008-07-14 | 2011-08-10 | 山阳特殊制钢株式会社 | Alloys for soft magnetic film layers in vertical magnetic recording media, sputtering target materials and manufacturing method therefore |
| CN103221568A (en) * | 2010-10-26 | 2013-07-24 | 山阳特殊制钢株式会社 | Soft magnetic alloy for magnetic recording, sputtering target material, and magnetic recording medium |
Also Published As
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| JP2013040377A (en) | 2013-02-28 |
| WO2013024845A1 (en) | 2013-02-21 |
| TWI558831B (en) | 2016-11-21 |
| CN103781933A (en) | 2014-05-07 |
| JP5917045B2 (en) | 2016-05-11 |
| SG2014011274A (en) | 2014-04-28 |
| MY166289A (en) | 2018-06-25 |
| TW201323642A (en) | 2013-06-16 |
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