CN103839745A - Swing-type plasma restraining device - Google Patents
Swing-type plasma restraining device Download PDFInfo
- Publication number
- CN103839745A CN103839745A CN201210480393.1A CN201210480393A CN103839745A CN 103839745 A CN103839745 A CN 103839745A CN 201210480393 A CN201210480393 A CN 201210480393A CN 103839745 A CN103839745 A CN 103839745A
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- swing
- annular support
- restraint device
- blade
- plasm restraint
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- 230000000452 restraining effect Effects 0.000 title abstract 4
- 238000006243 chemical reaction Methods 0.000 claims abstract description 70
- 230000007246 mechanism Effects 0.000 claims abstract description 41
- 238000001020 plasma etching Methods 0.000 claims abstract description 20
- 238000004140 cleaning Methods 0.000 claims abstract description 19
- 230000033001 locomotion Effects 0.000 claims description 16
- 238000003756 stirring Methods 0.000 claims description 9
- 239000007769 metal material Substances 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 abstract description 15
- 230000003068 static effect Effects 0.000 abstract description 7
- 210000002381 plasma Anatomy 0.000 abstract 5
- 238000005530 etching Methods 0.000 description 20
- 238000000034 method Methods 0.000 description 17
- 230000008021 deposition Effects 0.000 description 9
- 230000000739 chaotic effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 238000006386 neutralization reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- Plasma Technology (AREA)
Abstract
The invention discloses a swing-type plasma restraining device which is arranged in a reaction cavity of a plasma etching device and is characterized in that the swing-type plasma restraining device includes an annular support which is arranged at between the periphery of a static chuck and the cavity wall of the reaction cavity and a plurality of swing mechanisms arranged on the annular support. Plasmas in the reaction cavity are stirred by the plurality of groups of moving swing mechanisms so that vortexes are formed to clean the reaction cavity. Each group of swing mechanism includes blades and a rotating shaft which passes through the blades along the radial direction of the annular support, wherein one end of the rotating shaft is connected with one side of the annular support, close to the static chuck, and the other end of the rotating shaft is connected with one side of the annular support, close to the cavity wall; and the blades are capable of swinging or rotating on the rotating shaft. The swing-type plasma restraining device is capable of improving the reaction probability of the plasmas and polymers deposited on parts which are hard to clean so that the cleaning capability of the polymers on the parts which are hard to clean is improved.
Description
technical field
The present invention relates to a kind of plasma etching device reaction cavity cleaning device, relate in particular to a kind of swing plasm restraint device.
Background technology
As shown in Figure 1, a kind of plasma etching equipment of prior art, its reaction chamber 9 is provided with the chamber wall 2 in coated internal work space, in chamber wall 2, be provided with top electrode assembly 3, bottom electrode assembly 4, top electrode assembly 3 comprises the heater 31, the gas tip 32 that are arranged in reaction chamber 9 top inner wall, and is arranged on gas tip 32 movable limit collar 34 around; Bottom electrode assembly 4 is arranged on top electrode assembly 3 belows, comprises electrostatic chuck 41, is successively set on electrostatic chuck 41 focusing ring 42, cover ring 43 around; Below cover ring 43, around electrostatic chuck 41, be also equipped with confinement ring 5, reaction chamber 9 is outside equipped with exhaust pump 6.Bottom electrode assembly 4 is connected with the radio-frequency power supply of plasma etching equipment, the gas of being inputted in reaction chamber 9 by gas tip 32 is ionized as plasma 71 between top electrode 3 and bottom electrode 4, and after reaction, plasma 71 is that gas 72 is deflated pump 6 and discharges outside reaction chamber 9 by the rear neutralization of confinement ring 5.
Plasma etching equipment is carrying out in the process of etching, plasma and wafer react, and the polymer that etching reaction generates is easily deposited on plasma etching equipment reaction cavity wall, affects etching, pollute wafer, therefore need plasma etching apparatus reaction chamber to clean.The reaction chamber cleaning method of prior art uses dry method to clean conventionally, there is the gas of cleaning capacity from gas tip 32 inputs, gas is ionized as with the polymer 8 being deposited on reaction chamber inwall, chemical reaction occurring after plasma 71, thereby disposes the polymer 8 of deposition and make product discharge reaction chamber 9 with gas.There is following problem in existing etching apparatus and cleaning method: because cover ring 43, movable limit collar 34 are non-conductive structure and the edge corner portions that is positioned at top electrode, bottom electrode, these position electric fields are more weak, the polymer 8 that is deposited on these positions when etching is many, and while cleaning, the plasma density at these positions is lower, chemical reaction is more weak, and the polymer 8 of deposition is relatively difficult to wash.
Summary of the invention
The invention provides a kind of swing plasm restraint device, can make the plasma in plasma etching device reaction cavity form eddy current, improve plasma and difficult clean position deposition polymer react probability, thereby improve the cleansing power of the polymer that the clean position of difficulty is deposited.
The present invention realizes by the following technical solutions:
A kind of swing plasm restraint device, be arranged in the reaction chamber of plasma etching equipment, the gas tip that described plasma etching equipment arranges by electrostatic chuck top introduces in reaction chamber gas to form the plasma of this gas, be characterized in, described swing plasm restraint device comprises: be arranged on electrostatic chuck peripheral to the annular support between the chamber wall of reaction chamber, be arranged on the many groups swing mechanism on annular support; Many groups swing mechanism of the plasma passive movement in reaction chamber stirs and forms eddy current, comes cleaning reaction chamber.
Above-mentioned swing plasm restraint device, is characterized in, described in every group, swing mechanism also comprises: blade and the rotation axis that radially passes described blade along annular support; Wherein said rotation axis one end is connected near a side of electrostatic chuck with annular support, and its other end is connected near a side of chamber wall with annular support.
Above-mentioned swing plasm restraint device, is characterized in, between the swing mechanism that many groups are described and the chamber wall of electrostatic chuck and reaction chamber, is respectively equipped with gap, and each swing mechanism has enough spaces move and can not collide electrostatic chuck and chamber wall.
Above-mentioned swing plasm restraint device, is characterized in, described blade is arc shaped blade; Described in every group, swing mechanism comprises multi-disc arc shaped blade; This multi-disc arc shaped blade perpendicular to annular support radially, and is spaced the vane group of composition fan ring-type, forms gap supplied gas and pass through between adjacent arc shaped blade.
Above-mentioned swing plasm restraint device, is characterized in, organizes on the circumference that described vane group is evenly distributed on annular support more, between two groups of adjacent swing mechanisms, is provided with gap.
Above-mentioned swing plasm restraint device, is characterized in, described vane group is flexibly connected with rotation axis, and on rotation axis along radially the swinging back and forth of annular support, constantly change the angle between each arc shaped blade and rotation axis in vane group.
Above-mentioned swing plasm restraint device, is characterized in, described in every group, swing mechanism comprises a blade; Each spacing with blades is arranged on the circumference of annular support, and along the radially radial arrangement of annular support; Between adjacent blade, forming gap supplied gas passes through.
Above-mentioned swing plasm restraint device, is characterized in, the blade described in each is respectively around each rotation axis rotation.
Above-mentioned swing plasm restraint device, is characterized in, described many groups swing mechanism together with annular support around the central rotation of annular support.
Above-mentioned swing plasm restraint device, is characterized in, described swing plasm restraint device is made up of metal material.
The present invention has following beneficial effect:
A kind of swing plasm restraint device of the present invention is owing to comprising many group swing mechanisms, every group of swing mechanism comprises blade and rotation axis, blade is reciprocating motion or static on axle under the driving of external agency, thereby many group swing mechanisms can make it to form eddy current by the plasma with cleaning capacity in reciprocating motion stirring reaction chamber in plasma etching device reaction cavity washing and cleaning operation, chaotic plasma-vortex strenuous exercise, the probability that touches the position that in reaction chamber, difficulty cleans to increases, the polymer of difficult cleaning part position surface deposition and the probability of plasma reaction are increased, thereby improve the cleansing power of the polymer to the clean position of difficulty deposition, the plasma remaining static in the time of etching operation and guaranteed etching work is in stable state, make that etching process is uniform and stable carries out, the present invention can be in etching process by the plasma confinement of work in reaction chamber swing plasm restraint device above, separate with lower space in reaction chamber, make that etching process is stable carries out.
Accompanying drawing explanation
Fig. 1 is the reaction chamber structural representation of prior art plasma etching equipment;
Fig. 2 is that the swing plasm restraint device of the present invention is arranged on the overall structure schematic diagram in the reaction chamber of plasma etching equipment;
Fig. 3 is the structural representation of one of swing plasm restraint device embodiment of the present invention;
Fig. 4 is two the structural representation of the swing plasm restraint device embodiment of the present invention;
Fig. 5 is the process that the washes down fundamental diagram of the swing plasm restraint device embodiment mono-of the present invention;
Fig. 6 is the process that the washes down fundamental diagram of the swing plasm restraint device embodiment mono-of the present invention.
Embodiment
Below in conjunction with accompanying drawing, by describing a preferably specific embodiment in detail, the present invention is further elaborated.
As shown in Figure 2, a kind of plasma etching equipment, its reaction chamber 9 is provided with the chamber wall 2 in coated internal work space, in chamber wall 2, be provided with top electrode assembly 3, bottom electrode assembly 4, top electrode assembly 3 comprises the heater 31, the gas tip 32 that are arranged in reaction chamber 9 top inner wall, and is arranged on gas tip 32 movable limit collar 34 around; Bottom electrode assembly 4 is arranged on top electrode assembly 3 belows, comprises electrostatic chuck 41, is successively set on electrostatic chuck 41 focusing ring 42, cover ring 43 around, and bottom electrode assembly 4 is connected with the radio-frequency power supply of plasma etching equipment; Reaction chamber 9 is outside equipped with exhaust pump 6.Coordinate and consult shown in accompanying drawing 3 and accompanying drawing 4, a kind of swing plasm restraint device 1 of the present invention is arranged in plasma etching device reaction cavity 9, comprise: be arranged on the periphery of electrostatic chuck 41 to the annular support 11 between the chamber wall 2 of reaction chamber 9, be arranged on the many groups swing mechanism 12 on annular support 11.The gas of being inputted in reaction chamber 9 by gas tip 32 in accompanying drawing 2 is ionized as plasma 71 between top electrode 3 and bottom electrode 4, many groups swing mechanism 12 of plasma 71 passive movements stirs and forms eddy current, cleaning reaction chamber 9, after reaction, plasma 71 is that gas 72 is deflated pump 6 and discharges outside reaction chamber 9 by the rear neutralization of swing plasm restraint device 1.In figure, broad arrow represents the flow direction of gas, and black arrow represents the direction of motion of swing plasm restraint device 1.
Every group of swing mechanism 12 also comprises: blade 13 and the rotation axis 14 that radially passes blade 13 along annular support 11; Wherein rotation axis 14 one end are connected near a side of electrostatic chuck 41 with annular support 11, and its other end is connected near a side of chamber wall 2 with annular support 11.Between many group swing mechanisms 12 and electrostatic chuck 41 and the chamber wall 2 of reaction chamber 9, be respectively equipped with gap, each swing mechanism 12 has enough spaces move and can not collide electrostatic chuck 41 and chamber wall 2.
The present invention has various embodiments.
Consult shown in accompanying drawing 3, wherein the first embodiment, blade 13 is arc shaped blade, every group of swing mechanism 12 comprises multi-disc arc shaped blade.This multi-disc arc shaped blade perpendicular to annular support 11 radially, and is spaced the vane group 15 of composition fan ring-type, forms gap supplied gas and pass through between adjacent arc shaped blade.Vane group 15 is evenly distributed on the circumference of annular support 11, between two groups of adjacent swing mechanisms 12, is provided with gap.Vane group 15 is flexibly connected with rotation axis 14, and can be under the driving of external agency on rotation axis 14 along radially the swinging back and forth of annular support 11, constantly change the angle between each arc shaped blade and rotation axis 14 in vane group 15.
Consult shown in accompanying drawing 4, wherein the second embodiment, every group of swing mechanism 12 comprises a blade 13, and each blade 13 is disposed on the circumference of annular support 11, and along the radially radial arrangement of annular support 11.Between adjacent blade 13, forming gap supplied gas passes through.Each blade 13 can rotate around each rotation axis 14 respectively under the driving of external agency, organize more swing mechanism 12 can also be together with annular support 11 around the central rotation of annular support 11.Described swing plasm restraint device 1 is made up of metal material.
Swing plasm restraint device 1 is made up of metal material, can pass through chamber wall 2 good earths, form the loop of rf, in etching process, the plasma confinement of work, above the interior swing plasm restraint device 1 of reaction chamber 9, is separated with the interior lower space of reaction chamber 9.
When the work of plasma etching equipment, in the time carrying out etching operation, working gas is input in reaction chamber 2 by gas tip 32, between top electrode 3 and bottom electrode 4, be ionized as plasma 71, now plasma 71 need to be in stable state to make uniform and stable the carrying out of etching process, each group of swing mechanism 12 stop motions of swing plasm restraint device 1, remain static, the swing plasm restraint device 1 that metal material is made is constrained in the space of the interior swing plasm restraint device of reaction chamber 21 top etching operation process applying plasma 71, after etching process finishes, plasma 71 flows into the space of swing plasm restraint device 1 below by the gap between each blade 13 of swing plasm restraint device 1, neutralizes as being deflated pump 6 after gas 72 and discharges reaction chamber 2.In the time carrying out reaction chamber washing and cleaning operation, the gas with cleaning capacity is input in reaction chamber 2 by gas tip 32, between top electrode 3 and bottom electrode 4, be ionized the plasma 71 into this gas, now drive the swing mechanism 12 of swing plasm restraint device 1 to move by external agency, the plasma 71 of swing plasm restraint device top collides the blade 13 of the swing mechanism 12 in motion in the process moving downward, by its stirring and the direction of motion changes, stir again plasma 71 around, thereby make the plasma 71 of swing plasm restraint device 1 top form eddy current.Take the first embodiment as example, consult shown in accompanying drawing 5 and accompanying drawing 6, in figure, dotted arrow represents the direction of motion that plasma 71 is original, black solid arrow represents the direction of motion of the swing mechanism 12 of swing plasm restraint device 1, broad arrow represents that plasma 71 is by the direction of motion after stirring, when the blade 13 of swing mechanism 12 inwardly swings along rotation axis 14, the plasma 71 originally moving downward moves top to the inside with it after colliding blade 13, when blade 13 outwards swings along rotation axis 14, the plasma 71 originally moving downward moves top laterally with it after colliding blade 13, the plasma 71 moving upward stirs again the plasma 71 originally moving downward, make a large amount of chaotic little eddy current of the interior generation of plasma 71.For the second embodiment of the present invention, it is identical that its eddy current produces principle.Chaotic plasma-vortex strenuous exercise, the probability that touches the position that the interior difficulty of reaction chamber 9 cleans to increases, and has increased the polymer 8 of difficult cleaning part position surface deposition and the probability of plasma reaction.Can also control the movement rate of swing plasm restraint device 1 by outside control circuit, make its in the course of the work movement rate constantly change, the plasma 71 of collision on swing plasm restraint device 1 stirred more violently, thereby makes fiercer plasma-vortex and the whirly of the interior formation campaign of reaction chamber 9.Plasma-vortex and the whirly of reaction chamber 9 interior confusions move more tempestuously, and plasma 71 touches each position in reaction chamber 9 better, react with the polymer 8 of deposition, and the interior difficult position of cleaning of reaction chamber 9 is cleaned better.
In sum, a kind of swing plasm restraint device of the present invention is owing to comprising many group swing mechanisms, every group of swing mechanism comprises blade and rotation axis, blade is reciprocating motion or static on axle under the driving of external agency, thereby many group swing mechanisms can make it to form eddy current by the plasma with cleaning capacity in reciprocating motion stirring reaction chamber in plasma etching device reaction cavity washing and cleaning operation, chaotic plasma-vortex strenuous exercise, the probability that touches the position that in reaction chamber, difficulty cleans to increases, the polymer of difficult cleaning part position surface deposition and the probability of plasma reaction are increased, thereby improve the cleansing power of the polymer to the clean position of difficulty deposition, the plasma remaining static in the time of etching operation and guaranteed etching work is in stable state, make that etching process is uniform and stable carries out, the present invention can be in etching process by the plasma confinement of work in reaction chamber swing plasm restraint device above, separate with lower space in reaction chamber, make that etching process is stable carries out.
Although content of the present invention has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.Read after foregoing those skilled in the art, for multiple modification of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (10)
1. a swing plasm restraint device (1), be arranged in the reaction chamber (9) of plasma etching equipment, the gas tip (32) that described plasma etching equipment arranges by electrostatic chuck (41) top introduces in reaction chamber (9) gas to form the plasma of this gas, it is characterized in that, described swing plasm restraint device (1) comprising: be arranged on electrostatic chuck (41) peripheral to the annular support (11) between the chamber wall (2) of reaction chamber (9), be arranged on the many groups swing mechanism (12) on annular support (11); Many groups swing mechanism (12) of plasma (71) passive movement in reaction chamber (9) stirs and forms eddy current, comes cleaning reaction chamber (9).
2. swing plasm restraint device as claimed in claim 1 (1), is characterized in that, swing mechanism described in every group (12) also comprises: blade (13) and the rotation axis (14) that radially passes described blade (13) along annular support (11); Wherein said rotation axis (14) one end is connected near a side of electrostatic chuck (41) with annular support (11), and its other end is connected near a side of chamber wall (2) with annular support (11).
3. swing plasm restraint device as claimed in claim 1 (1), it is characterized in that, between the swing mechanism (12) that many groups are described and electrostatic chuck (41) and the chamber wall (2) of reaction chamber (9), be respectively equipped with gap, each swing mechanism (12) has enough spaces move and can not collide electrostatic chuck (41) and chamber wall (2).
4. swing plasm restraint device as claimed in claim 2 (1), is characterized in that, described blade (13) is arc shaped blade; Swing mechanism described in every group (12) comprises multi-disc arc shaped blade; This multi-disc arc shaped blade perpendicular to annular support (11) radially, and is spaced the vane group (15) of composition fan ring-type, forms gap supplied gas and pass through between adjacent arc shaped blade.
5. swing plasm restraint device as claimed in claim 4 (1), is characterized in that, organizes described vane group (15) more and is evenly distributed on the circumference of annular support (11), between adjacent two groups of swing mechanisms (12), is provided with gap.
6. swing plasm restraint device as claimed in claim 4 (1), it is characterized in that, described vane group (15) is flexibly connected with rotation axis (14), and upper along radially the swinging back and forth of annular support (11) at rotation axis (14), constantly change the angle between each arc shaped blade and rotation axis (14) in vane group (15).
7. swing plasm restraint device as claimed in claim 2 (1), is characterized in that, swing mechanism described in every group (12) comprises a blade (13); Each blade (13) is disposed on the circumference of annular support (11), and along the radially radial arrangement of annular support (11); Between adjacent blade (13), forming gap supplied gas passes through.
8. swing plasm restraint device as claimed in claim 7 (1), is characterized in that, the blade (13) described in each rotates around each rotation axis (14) respectively.
9. swing plasm restraint device as claimed in claim 7 (1), is characterized in that, described many groups swing mechanism (12) together with annular support (11) around the central rotation of annular support (11).
10. swing plasm restraint device as claimed in claim 1 (1), is characterized in that, described swing plasm restraint device (1) is made up of metal material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210480393.1A CN103839745B (en) | 2012-11-23 | 2012-11-23 | A kind of swing plasm restraint device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210480393.1A CN103839745B (en) | 2012-11-23 | 2012-11-23 | A kind of swing plasm restraint device |
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| Publication Number | Publication Date |
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| CN103839745A true CN103839745A (en) | 2014-06-04 |
| CN103839745B CN103839745B (en) | 2016-06-22 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201210480393.1A Active CN103839745B (en) | 2012-11-23 | 2012-11-23 | A kind of swing plasm restraint device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107154332A (en) * | 2016-03-03 | 2017-09-12 | 中微半导体设备(上海)有限公司 | A kind of plasma processing apparatus and method |
| CN113035679A (en) * | 2019-12-24 | 2021-06-25 | 中微半导体设备(上海)股份有限公司 | Plasma processing device |
| CN115249604A (en) * | 2021-04-26 | 2022-10-28 | 中微半导体设备(上海)股份有限公司 | Confinement ring, plasma processing device and gas pressure control method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060060303A1 (en) * | 2003-03-31 | 2006-03-23 | Tokyo Electron Limited | Plasma processing system and method |
| CN202423213U (en) * | 2011-11-23 | 2012-09-05 | 中微半导体设备(上海)有限公司 | Plasma restraining device |
-
2012
- 2012-11-23 CN CN201210480393.1A patent/CN103839745B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060060303A1 (en) * | 2003-03-31 | 2006-03-23 | Tokyo Electron Limited | Plasma processing system and method |
| CN202423213U (en) * | 2011-11-23 | 2012-09-05 | 中微半导体设备(上海)有限公司 | Plasma restraining device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107154332A (en) * | 2016-03-03 | 2017-09-12 | 中微半导体设备(上海)有限公司 | A kind of plasma processing apparatus and method |
| CN107154332B (en) * | 2016-03-03 | 2019-07-19 | 中微半导体设备(上海)股份有限公司 | A kind of plasma processing apparatus and method |
| CN113035679A (en) * | 2019-12-24 | 2021-06-25 | 中微半导体设备(上海)股份有限公司 | Plasma processing device |
| CN113035679B (en) * | 2019-12-24 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | Plasma processing device |
| CN115249604A (en) * | 2021-04-26 | 2022-10-28 | 中微半导体设备(上海)股份有限公司 | Confinement ring, plasma processing device and gas pressure control method |
| CN115249604B (en) * | 2021-04-26 | 2025-05-09 | 中微半导体设备(上海)股份有限公司 | Confinement ring, plasma processing device and gas pressure control method |
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|---|---|
| CN103839745B (en) | 2016-06-22 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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Effective date of registration: 20210129 Address after: 201201 Shanghai City Jingqiao export processing zone of Pudong New Area (South) Taihua Road No. 188 Patentee after: China micro semiconductor equipment (Shanghai) Co.,Ltd. Patentee after: Nanchang Medium and Micro Semiconductor Equipment Co.,Ltd. Address before: 201201 Shanghai City Jingqiao export processing zone of Pudong New Area (South) Taihua Road No. 188 Patentee before: China micro semiconductor equipment (Shanghai) Co.,Ltd. |