CN103869631A - Exposure apparatus, controlling method for the same, and alignment method for exposure - Google Patents

Abstract

An exposure apparatus capable of preventing a reduction in its accuracy due to, for example, the influence of aging or the influence of heat is disclosed. Also disclosed is a method of controlling the same, and an alignment method for exposure. In one aspect, the exposure apparatus includes a main stage for adjusting a position of a substrate, a beam irradiation unit for irradiating a beam onto a mask, and a beam monitoring unit having a position fixed with respect to the main stage, and for recognizing the beam emitted from the beam irradiation unit and passed through one pattern of the mask.

Description

Exposure device, method of controlling exposure device, and alignment method for exposure

Cross References to Related Applications

This application claims priority from Korean Patent Application No. 10-2012-0146637 filed with the Korean Patent Office on Dec. 14, 2012, the entire disclosure of which is incorporated herein by reference.

technical field

The disclosed technology relates to an exposure apparatus for thin film deposition, a method of controlling the exposure apparatus, and an alignment method for exposure, and more particularly, to using a feedback loop to more precisely control the position of movement of components of the apparatus and thereby precisely align Patterning of thin films.

Background technique

In a general thin film exposure apparatus, light emitted from a light source is irradiated onto a mask, passes through openings patterned in the mask, and then is incident on a substrate. In this way, light is irradiated to predetermined regions of the substrate in the corresponding shapes of the openings patterned in the mask.

In the exposure process described above, the alignment of the mask or the substrate is a major concern in order to precisely expose a predetermined area of the substrate with the corresponding shape of the opening patterned in the mask.

For example, a typical process is a laser thermal transfer (LITI) process in which a laser beam emitted from a light source passes through a mask and is shaped using the mask. A shaped laser beam hits the donor film to transfer a specific amount of organic or inorganic material to the substrate as a thin film layer. Before the LITI process is initiated, the laser beam should be precisely aligned to be incident on a predetermined region (eg, a specific sub-pixel region) of a substrate formed with, for example, a thin film transistor (TFT). This is because defective electronic products may be produced if the laser beam has an unintended shape or is irradiated to an unintended area of the substrate.

Therefore, since the alignment of the mask and the position of the region for thin film deposition (eg, TFT) in relation to the shape of the laser beam are set in advance, the alignment of the substrate where the region irradiated by the laser beam is critical.

However, in the conventional thin film exposure system, when exposure is repeatedly performed, for example, due to aging effects and thermal effects, the accuracy of exposure by the exposure device decreases. That is, a positional error of the exposure pattern is introduced as the drive unit ages due to changes in external environmental conditions over time and the position of the light source (typically a laser beam) changes due to heat generated from the exposure process.

Contents of the invention

The disclosed technology provides an exposure device, a method of controlling the exposure device, and an alignment method for exposure, which can prevent a decrease in exposure accuracy of the exposure device due to, for example, an aging effect or a thermal effect. However, the disclosed technology is not limited thereto.

According to an aspect of the present invention, there is provided an exposure apparatus including: a main stage configured to adjust the position of a substrate; a beam irradiation unit configured to irradiate a beam onto a mask; and a beam monitoring unit having a The master stage is fixed in position and is configured to recognize a beam emitted from the beam irradiation unit and passing through an opening in the mask to form a specific pattern.

The exposure apparatus further includes a control unit configured to output a substrate position adjustment signal indicating a position of the master stage to adjust the position of the substrate.

The control unit may output the substrate position adjustment signal based on information on the beam obtained by the beam monitoring unit. In more detail, the control unit is configured to check a monitored position of the light beam incident on the light beam monitoring unit, wherein the monitored position is based on information about the light beam obtained by the light beam monitoring unit, the control unit The unit outputs the substrate position adjustment signal based on the difference between the monitored position and a preset reference position.

The substrate position adjustment signal output from the control unit includes: a first position adjustment signal for allowing an alignment key of the substrate to be set at a preset alignment position with respect to the beam irradiation unit; and a second position adjustment signal corresponding to an adjustment vector having said preset reference position as a starting point and having said monitored position as an end point.

Optionally, the exposure device further includes an alignment key monitoring unit configured to obtain information related to the position of the alignment key of the substrate, and the position adjustment of the substrate output from the control unit The signal corresponds to a basis vector having as a starting point the detected position of the alignment key of the substrate obtained by the alignment key monitoring unit and having as an end point relative to the preset alignment position of the beam irradiation unit and the sum of adjustment vectors having said preset reference position as a starting point and having said monitored position as an end point.

The optical device further includes a mask stage for adjusting the position of the mask, and the control unit outputs a mask position adjustment signal indicating the position of the mask stage, so as to obtain The information about the beam adjusts the position of the mask. In this case, the control unit is configured to check the monitored position of the light beam incident on the light beam monitoring unit based on the information on the light beam obtained by the light beam monitoring unit, and the control unit is configured to check the monitored position of the light beam incident on the light beam monitoring unit based on the The difference between the monitored position and the preset reference position is used to output the mask position adjustment signal.

The exposure apparatus further includes an alignment key monitoring unit configured to obtain information on a position of an alignment key of the substrate, and the control unit output is configured to monitor the alignment key of the alignment key monitoring unit. The alignment key for position adjustment monitors the unit position adjustment signal. In this case, the control unit outputs the alignment key monitoring unit position adjustment signal based on the information on the light beam obtained by the light beam monitoring unit.

Also, the control unit is configured to check the monitored position of the light beam incident to the light beam monitoring unit based on information on the light beam obtained by the light beam monitoring unit, and the control unit is based on the monitored position and The difference between the preset reference positions outputs an alignment key monitoring unit position adjustment signal. In more detail, the alignment key monitoring unit position adjustment signal output from the control unit corresponds to an adjustment vector having the preset reference position as a start point and the monitored position as an end point.

According to another aspect of the technology disclosed in the present application, there is provided a method of controlling an exposure device, the method comprising: obtaining and passing through a mask from a light beam irradiating unit through a light beam monitoring unit having a fixed position relative to the master stage. Openings in the film to form information about beams of specific patterns; based on information about beams obtained by the beam monitoring unit, inspecting the monitored position of the beam incident to the beam monitoring unit, and inspecting the monitored position and a preset reference position; mounting the substrate on the main stage or on a substrate mounting unit having a position adjustable by the main stage; and by The difference between the preset reference positions outputs a substrate position adjustment signal to adjust the position of the substrate.

Adjusting the position of the substrate includes: allowing the alignment key of the substrate to be set at a preset alignment position with respect to the beam irradiation unit; The adjustment vector of the monitored position additionally adjusts the position of the substrate.

Adjusting the position of the substrate includes adjusting the position of the substrate based on a final vector corresponding to an alignment key monitoring unit having as a starting point obtained by an alignment key monitoring unit for obtaining information on a position of an alignment key of the substrate. The detected position of the alignment key of the substrate and having as an end point the basis vector with respect to the preset alignment position of the beam irradiation unit and having the preset reference position as a starting point and having as an end point the The sum of the adjustment vectors of the monitored positions.

According to another aspect of the disclosed technology, there is provided a method of controlling an exposure device, the method further comprising: obtaining in a light beam monitoring unit having a fixed position relative to a master stage and a light beam emitted from a light beam irradiation unit and passing through a light beam with information about an opening in a mask whose position can be adjusted by a mask stage to form a beam of a specific pattern; inspecting the monitored beam incident to the beam monitoring unit based on the information about the beam obtained by the beam monitoring unit position, and checking the difference between the monitored position and a preset reference position; and by outputting a mask position adjustment signal to the mask based on the difference between the monitored position and the preset reference position stage to adjust the position of the mask.

According to another aspect of the disclosed technology, there is provided a method of controlling an exposure apparatus, the method comprising: obtaining and emitting from a beam irradiation unit and passing through a mask in a beam monitoring unit having a fixed position relative to a master stage. openings in the beam to form a specific pattern of information about the beam; check the monitored position of the beam incident to the beam monitoring unit based on the information about the beam obtained by the beam monitoring unit, and check the monitored position and a difference between preset reference positions; and adjusting a position of an alignment key monitoring unit for obtaining information on a position of an alignment key of the substrate based on the difference between the monitored position and the preset reference position .

Adjusting the position of the alignment key monitoring unit corresponds to an adjustment vector having the preset reference position as a start point and the monitored position as an end point.

According to another aspect of the disclosed technology, there is provided an alignment method for exposure, the alignment method including: checking a monitored light beam emitted from the light beam irradiation unit and passing through an opening of a mask to form a specific pattern. position, and checking the difference between the monitored position and a preset reference position; providing a substrate; and adjusting the position of the substrate based on the difference between the monitored position and the preset reference position.

Adjusting the position of the substrate includes: allowing the alignment key of the substrate to be set at a preset alignment position with respect to the beam irradiation unit; The adjustment vector of the monitored position additionally adjusts the position of the substrate.

Adjusting the position of the substrate may include adjusting the position of the substrate based on a final vector corresponding to a detected position of the alignment key of the substrate as a starting point and having a position relative to the beam irradiation unit as an end point. The sum of the base vector of the preset alignment position and the adjustment vector having the preset reference position as a start point and the monitored position as an end point.

According to another aspect of the disclosed technology, there is provided an alignment method for exposure, the alignment method including: checking a monitored position of a beam from a beam irradiation unit and passing through an opening in a mask to form a specific pattern, and checking the difference between the monitored position and a preset reference position; and adjusting the position of the mask based on the difference between the monitored position and the preset reference position.

According to another aspect of the disclosed technology, there is provided an alignment method for exposure, the alignment method including checking a monitored position of a beam emitted from a beam irradiation unit and passing through an opening in a mask to form a specific pattern , and checking the difference between the monitored position and the preset reference position; The alignment key of the information monitors the position of the unit.

Adjusting the position of the alignment key monitoring unit corresponds to an adjustment vector having the preset reference position as a start point and the monitored position as an end point.

Description of drawings

The above and other features and advantages of the disclosed technology will become more apparent by describing in detail exemplary embodiments of the present invention with reference to the accompanying drawings, in which:

FIG. 1 is a conceptual perspective view of an exposure apparatus according to an embodiment of the disclosed technology;

2 is a cross-sectional view of the exposure apparatus shown in FIG. 1 to describe the operation of the exposure apparatus;

3 is a conceptual view of an image of information obtained by recognizing a beam passing through a pattern of a mask of a beam monitoring unit of the exposure apparatus shown in FIG. 1;

4 is a conceptual view of an image of information obtained by recognizing an alignment key of a substrate in an alignment key monitoring unit of the exposure apparatus shown in FIG. 1;

5 is a graph showing changes in beam positions when an exposure apparatus according to a comparative example is used;

FIG. 6 is a graph showing changes in beam positions when the exposure apparatus shown in FIG. 1 is used;

7 is a graph showing changes in beam positions when the exposure apparatus shown in FIG. 1 is used and the pattern of the mask is changed;

FIG. 8 is a flowchart of a method of controlling an exposure device according to one embodiment of the disclosed technology;

9 is a flowchart of a method of controlling an exposure device according to another embodiment of the disclosed technology; and

FIG. 10 is a flowchart of a method of controlling an exposure apparatus according to another embodiment of the disclosed technology.

Detailed ways

The disclosed technology is described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. However, this invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein, provided so that this disclosure will be thorough and complete, and will fully convey to those skilled in the art Concept of the invention. The size of elements may be exaggerated in the drawings for convenience of illustration.

In the following description, x, y, and z axes are not limited to the three axes on the orthogonal coordinate system, and can be interpreted in a broader sense as including them. For example, the x, y, and z axes may be orthogonal to each other or non-orthogonal.

Also, dimensions and thicknesses of elements in the drawings are arbitrarily provided for convenience of description, and thus do not limit the scope of the disclosed technology.

In the drawings, the thicknesses of layers and regions are exaggerated for clarity. It will be understood that when an element such as a layer, region or substrate is referred to as being "on" another element, it can be "directly on" the other element or intervening elements may be present.

As used herein, the word "and/or" includes any and all combinations of one or more of the associated listed items.

FIG. 1 is a conceptual perspective view of a thin film exposure apparatus according to an embodiment of the disclosed technology.

The exposure apparatus according to various embodiments includes a main stage 10 , a beam irradiation unit (BIU) 30 , and a beam monitoring unit (BMU) 40 . As shown in FIG. 1 , a mask stage 20 , an alignment key monitoring unit (AKMU) 41 and an alignment mask monitoring unit (AMMU) 42 are also included.

The master stage 10 adjusts the position of the substrate 12 . For example, the master stage 10 adjusts the position of the substrate 12 mounted on the master stage 10 , or mounted or mountable on a mounting unit (not shown) connected or connectable to the master stage 10 . Also, as shown in FIG. 1 , although the substrate 12 is mounted on the master stage 10 , the position of the substrate 12 can be adjusted, for example, on the x-y plane under the control of the control unit 50 . For example, the control unit 50 outputs a substrate position adjustment signal, and the master stage 10 adjusts the position of the substrate 12 according to the substrate position adjustment signal.

Alternatively, various other configurations are possible. For example, the substrate 12 may be disposed on a plurality of substrate pins extending vertically (+z and −z directions), and the main stage 10 may adjust the position of the substrate pins thereby adjusting the position of the substrate 12 placed on the substrate pins. Then, the substrate pins move vertically to allow the substrate 12 to be mounted on the mounting unit.

The master stage 10 may adjust the position of the substrate 12 while the alignment key monitoring unit 41 checks the position of the alignment key on the substrate 12 . That is, the position of the alignment key of the substrate 12 is checked via image information obtained by an imaging device (for example, a camera) included in the alignment key monitoring unit 41, and the master station 10 adjusts the position of the substrate 12 so that the alignment key is placed at the preset position.

The mask stage 20 adjusts the position of the mask 22 . For example, the mask stage 20 may adjust the position of the mask 20 mounted on the mask stage 20 , or mounted or mountable on a mounting unit (not shown) connected or connectable to the mask stage 20 . Also, as shown in FIG. 1 , although the mask 22 is mounted on the mask stage 22 , the position of the mask 22 can be adjusted on, for example, an x-y plane under the control of the control unit 50 . By way of example, the control unit 50 may output a mask position adjustment signal, and the mask stage 20 may adjust the position of the mask 22 according to the mask position adjustment signal.

Alternatively, various other configurations are possible. For example, the mask 22 may be placed on a plurality of mask pins extending vertically (+z and -z directions), and the mask stage 20 adjusts the position of the mask pins thereby adjusting the mask 22 placed on the mask pins s position. Then, the mask pins move vertically to allow the mask 22 to be mounted on the mounting unit. In this case, all or some of the substrate pins may be used as mask pins, and the master stage 10 may be used as the mask stage 20 .

The mask stage 20 adjusts the position of the mask 22 while the alignment mask monitoring unit 42 checks the position of the alignment mark on the mask 22 . That is, the position of the alignment mark of the mask 22 is checked by the image information obtained by the imaging device of the alignment mark monitoring unit 42 , and the mask stage 20 adjusts the position of the mask 22 so that the alignment mark is placed at a preset position.

Contrary to the above description, exposure apparatuses according to certain other embodiments of the disclosed technology will not include the mask stage 20, and the mask 22 will be maintained at a specific and fixed position.

The beam irradiation unit 30 irradiates a beam onto the mask 22 . The beam emitted from the beam irradiation unit 30 passes through the opening of the mask 22 to the substrate 12 or to a component located between the mask 22 and the substrate 12 to thereby generate a desired pattern. For example, a donor material component may deposit a thin film pattern onto a substrate associated with a predetermined set of thin film transistors (TFTs). The beam irradiation unit 30 irradiates electromagnetic energy characterized by, for example, a laser beam. The beam of electromagnetic energy will be referred to as light for convenience, but may contain higher frequencies than typical thermal (infrared) light energy associated with exposure systems.

The beam monitoring unit 40 generally has a fixed position relative to the master station 10 . For example, as shown in FIG. 1 , the beam monitoring unit 40 is coupled to the side of the main platform 10 or fixed on a frame connected to the main platform 10 . The beam monitoring unit 40 identifies the beam emitted from the beam irradiating unit 30 and passing through one pattern 22 a of the mask 22 .

In a conventional exposure system, although a substrate or mask is placed precisely at a preset position, the accuracy of exposure can be degraded due to, for example, the lapse of time as one or more exposures elapse or thermal effects generated during exposure . Due to even small changes in the alignment of optical units in the beam irradiation unit or deformation of the frame due to heat generated during exposure, the exposure pattern may not be precisely generated at the intended position even if the substrate and/or mask are precisely positioned.

However, the exposure apparatus according to various embodiments can substantially prevent the exposure accuracy of the exposure apparatus from being lowered due to, for example, aging or thermal effects. That is, changes (for example, even small changes) in the alignment of the optical units (for example, lenses) of the beam irradiation unit 30 or deformation of the frame of the exposure apparatus due to heat generated during exposure are undesirable. Since the beam monitoring unit 40 identifies the beam emitted from the beam irradiation unit 30 and passing through the pattern 22a of the mask 22, the position of the master stage 10 is thereby adjusted based on the information on the identified beam. Therefore, according to various embodiments, exposure may be accurately performed at a desired position of the substrate 12 or at a component interposed between the mask 22 and the substrate 12 .

FIG. 2 is a cross-sectional view of the exposure apparatus shown in FIG. 1 to describe the operation of the exposure apparatus. As shown in FIG. 2 , the beam monitoring unit 40 is used to calibrate the system before the substrate 12 is placed on the master stage 10 when the mask 22 is mounted and fixed on the mask stage 20 . It identifies a preset position of the beam emitted from the beam irradiation unit 30 and passing through the pattern 22 a of the mask 22 . To this end, the main stage 10 on which the beam monitoring unit 40 is mounted moves to the position shown in FIG. 2 to allow the beam monitoring unit 40 to recognize the beam position.

Here, the pattern 22 a of the mask 22 may be one of various patterns formed in the mask 22 . For example, the "pattern" may be a pattern through which a light beam to be exposed on the substrate 12 passes during exposure, or may be a dummy pattern that is not used during exposure but used only during alignment for calibration before exposure.

Information about the beams passing through the pattern 22a of the mask 22 and recognized by the beam monitoring unit 40 is visualized as an image 40i as shown in FIG. 3 . When the light beam monitoring unit 40 recognizes the light beam that has passed through the pattern 22a of the mask 22 at the preset reference position 40r, if it changes due to, for example, aging or heat, the light beam is recognized at the preset reference position 40r indicated by the dotted line. .

If a change occurs in the exposure apparatus, as shown in Fig. 3, the light beam is identified as being located at a monitored position 40d different from the preset reference position 40r. In this case, although the position of the alignment key of the substrate 12 is checked by the image information obtained by the imaging device of the alignment key monitoring unit 41 and the master stage 10 adjusts the position of the substrate 12 so that the alignment key is placed at a preset position, The intended location of the substrate 12 will not be accurately exposed.

However, in the exposure apparatus according to the various embodiments, since the exposure is performed considering the difference between the monitored position 40d of the beam obtained by the beam monitoring unit 40 and the preset reference position 40r before the substrate 12 is set, the expectation of the substrate 12 The location will be precisely exposed. That is, before the substrate 12 is set, the control unit 50 will check the monitored position 40d of the light beam incident to the light beam monitoring unit 40 based on the information about the light beam obtained by the light beam monitoring unit 40, and (before the substrate 12 is set Before and/or after) the substrate position adjustment signal is output to the main stage 10 in consideration of the difference between the monitored position 40d and the preset reference position 40r.

In this case, the substrate position adjustment signal output by the control unit 50 may include a first position adjustment signal and a second position adjustment signal, wherein the first position adjustment signal indicates that the alignment key of the substrate 12 is set with respect to the beam irradiation unit 30 At the preset aligned position 41r (see FIG. 4 ), and the second position adjustment signal corresponds to the adjustment vector V _ad having the preset reference position 40r as starting point and the monitored position 40d as ending point. A detailed description of these embodiments is now provided.

First, before the substrate 12 is set, the control unit 50 checks the monitored position 40d of the light beam incident to the light beam monitoring unit 40 based on the information on the light beam obtained by the light beam monitoring unit 40, and obtains a predetermined It is assumed that the reference position 40r has the adjustment information corresponding to the adjustment vector V _ad of the monitored position 40d as the end point. A second position adjustment signal related to the adjustment information may be sent to the master station 10 at this time or later.

Then, if the substrate 12 is set, the alignment key monitoring unit 41 allows the alignment key of the substrate 12 to be set at a preset alignment position 41 r with respect to the beam irradiation unit 30 . If, as shown in the image 41i in FIG. 4, the control unit 50 sends the first position adjustment signal to the main station 10, the above process can be performed, wherein the first position adjustment signal corresponds to the key with the alignment key as the starting point, which is controlled by the alignment key monitoring unit. 41 Check the detected position 41d of the alignment key and have the basis vector V _b of the preset alignment position 41r of the alignment key as the end point. Then, the above process can be understood as the following process: the main stage 10 adjusts the position of the substrate 12 so that the alignment key of the substrate 12 moves from the detected position 41d to the preset alignment position 41r.

However, if the control unit 50 sends to the master stage 10 a second position adjustment signal corresponding to the already obtained adjustment vector V _ad , or by using the already sent second position adjustment signal, the master stage 10 will additionally adjust the position of the substrate 12 The position is such as to ultimately allow the beam to precisely reach the intended area on the substrate 12 without error.

Naturally, the technology disclosed in the present application is not limited thereto and may be changed in configuration. For example, before the substrate 12 is set, the control unit 50 checks the monitored position of the light beam incident on the light beam monitoring unit 40 based on the information on the light beam obtained by the light beam monitoring unit 40, and obtains a preset The adjustment information corresponding to the adjustment vector V _ad of the monitored position 40d having the reference position as the end point. Then, if the substrate 12 is set, as shown in FIG. The basic information corresponding to the vector V _b . Then, the control unit 50 may send a position adjustment signal corresponding to the sum of the base vector V _b and the adjustment vector V _ad to the master stage 10 , so that the master stage 10 may adjust the position of the substrate 12 .

FIG. 5 is a graph showing changes in beam positions when an exposure apparatus according to a comparative example is used. FIG. 6 is a graph showing changes in beam positions when the exposure apparatus shown in FIG. 1 is used. In FIGS. 5 and 6 , the horizontal axis represents the order of substrates arranged, and the vertical axis represents the beam position change in μm. Three series of exposures are performed from the first series to the third series, and about 50 substrates are provided in each series.

As shown in FIGS. 5 and 6 , when the exposure apparatus according to the comparative example is used, the change in the position of the light beam emitted from the light beam irradiation unit 30 increases with the lapse of time, and the position sometimes changes by more than 2 μm or more from the initial position. More. This result means that the accuracy of the exposure is significantly reduced. However, when the exposure apparatus according to the present embodiment is used, the beam position varies by less than 1 μm, so exposure can be performed with high accuracy.

In the above description, when exposure is performed by fixing the position of the mask 22 and then setting the substrates 12 in order, the beam monitoring unit 40 obtains information for adjusting the position of the substrate 12 before each substrate 12 is set, the substrate 12 is set , and the position of the substrate 12 is adjusted according to the obtained information. However, the technology disclosed in the present application is not limited thereto.

For example, when the mask 22 is replaced to change the pattern 22a of the mask 22 or when the position of the mask 22 is changed, the technology disclosed in the present application may be applied. FIG. 7 is a graph showing changes in beam positions when the exposure apparatus shown in FIG. 1 is used and the pattern 22a of the mask 22 is changed. As shown in FIG. 7, even when the substrate 12 is set after the pattern 22a of the mask 22 is changed, the beam position variation is less than 1 μm and is effectively suppressed.

In the above description, the master stage 10 adjusts the position of the substrate 12 by using the information obtained by the beam monitoring unit 40 . However, the technology disclosed in the present application is not limited thereto. That is, if the mask 22 is not simply set at a preset fixed position but is set on the mask stage 20 for adjusting the position of the mask 22 as shown in FIG. The beam-related information obtained by the unit 40 outputs mask position adjustment information, so that the mask 20 can adjust the position of the mask 22 . In this case, if the substrate 12 is set after that, the master stage 10 may receive from the control unit 50 the detected position 41d corresponding to the alignment key of the substrate 12 checked by the alignment key monitoring unit 41 as a starting point and The substrate position adjustment signal corresponds to the base vector _Vb having the preset alignment position 41r as an end point, and the position of the substrate 12 can be adjusted, thereby allowing the desired position of the substrate 12 to be accurately exposed.

In this case, the control unit 50 may check the monitored position 40d of the light beam incident to the light beam monitoring unit 40 based on the information on the light beam obtained by the light beam monitoring unit 40, and may consider the monitored position 40d and the preset reference position The difference between 40r outputs a mask position adjustment signal.

In the above description, the master stage 10 or the mask stage 20 adjusts the position of the substrate 12 or the mask 22 by using the information obtained by the beam monitoring unit 40 . However, the technology disclosed in the present application is not limited thereto. For example, it may be considered to adjust the position of the alignment key monitoring unit 41 by using information obtained by the beam monitoring unit 40 . That is, the control unit 50 may output an alignment key monitoring unit position adjustment signal for adjusting the position of the alignment key monitoring unit 41 in consideration of information about the beam obtained by the beam monitoring unit 40 .

Also, as shown in FIG. 3 , the control unit 50 may check the monitored position 40d of the beam incident to the beam monitor unit 40 based on information about the beam obtained by the beam monitor unit 40, and may consider the difference between the monitored position 40d and the preset position. The difference between the reference positions 40r outputs an alignment key monitoring unit position adjustment signal. The alignment key monitoring unit position adjustment _signal may correspond to an adjustment vector Vad having a preset reference position 40r as a start point and a monitored position 40d as an end point. In this case, if the substrate 12 is set after that, the master station 10 may receive from the control unit 50 the detected position 41d of the alignment key of the substrate 12 having as a starting point checked by the alignment key monitoring unit 41 and have the detected position 41d as a starting point. The basis vector _Vb of the preset alignment position 41r of the end point corresponds to the substrate position adjustment signal, and can adjust the position of the substrate 12, thereby allowing the desired position of the substrate 12 to be accurately exposed.

FIG. 8 is a flowchart of a method of controlling an exposure device according to one embodiment of the technology disclosed in the present application.

In the method according to various embodiments, first, a mask is aligned with respect to an exposure device (eg, a beam irradiation unit) ( S10 ). However, if an already aligned mask exists in the exposure apparatus, operation S10 may not be performed. Then, the beam monitoring unit having a fixed position relative to the master stage obtains information on the beam emitted from the beam irradiation unit and passes through the pattern of the mask, and checks the monitored position of the beam incident to the beam monitoring unit based on the obtained information. , and check the difference between the monitored position and the preset reference position (S20). Here, the detected difference determines the degree of compensation that is subsequently performed.

Then, a substrate is prepared (S30). Operation S30 may be, for example, an operation of mounting the substrate on the main stage or on a substrate mounting unit having a position adjustable by the main stage. Then, the position of the substrate is adjusted by outputting a substrate position adjustment signal to the main stage in consideration of the difference between the monitored position and the preset reference position ( S40 ). In this way, the substrate can be aligned with respect to the beam irradiation unit and the detected differences can also be compensated.

Then, exposure is performed (S50), and the fully exposed substrate is unloaded (S60). After the set substrate is exposed, it is determined whether to terminate the process (S70). If it is determined not to terminate the process, before the next substrate is set, the beam monitoring unit rechecks the difference between the monitored position of the beam and the preset reference position (S20), and then sequentially performs subsequent processes for exposure.

In the method according to various embodiments described above, adjusting the position of the substrate may include the following two steps: allowing the alignment key of the substrate to be set at a preset alignment position relative to the beam irradiation unit; Presetting a reference position and having as an end point an adjustment vector of the monitored position of the beam monitored by the beam monitoring unit additionally adjusts the position of the substrate. Alternatively, adjusting the position of the substrate may include a step of considering a detected position of the alignment key of the substrate obtained by an alignment key monitoring unit for obtaining information on a position of the alignment key of the substrate having as a starting point and having as an end point the basis vector of the preset alignment position relative to the alignment key of the beam irradiation unit and having as the starting point the preset reference position of the beam and having as the end point the adjustment of the monitored position of the beam monitored by the beam monitoring unit The sum of the vectors corresponds to the final vector that adjusts the position of the substrate.

FIG. 9 is a flowchart of a method of controlling an exposure device according to another embodiment of the technology disclosed in the present application.

In the method according to the current embodiment, first, a mask is aligned with respect to an exposure device (eg, a beam irradiation unit) ( S10 ). However, if an already aligned mask exists in the exposure device, operation S10 may not be performed. Then, the beam monitoring unit having a fixed position with respect to the main stage obtains information related to a beam of a pattern emitted from the beam irradiating unit and passes through the mask, checks the monitored beam incident to the beam monitoring unit based on the obtained information. position, and check the difference between the monitored position and the preset reference position (S20). Here, the detected difference determines the degree of compensation that is subsequently performed.

Then, before the substrate is set, the position of the mask is adjusted by outputting a mask position adjustment signal to the mask stage in consideration of the difference between the monitored position of the beam and the preset reference position (S25). In this way, since the detected difference is compensated, it is possible to prevent reduction in exposure accuracy of the exposure apparatus due to aging effects or thermal effects.

Then, a substrate is prepared (S30). Operation S30 may be, for example, an operation of mounting the substrate on the main stage or on a substrate mounting unit having a position adjustable by the main stage. Then, the alignment key monitoring unit checks the detected position of the alignment key of the substrate, and adjusts the position of the substrate by outputting a substrate position adjustment signal to the main stage so that the alignment key is set at a preset alignment position (S40').

Then, exposure is performed (S50) and the fully exposed substrate is removed (S60). After the set substrate is exposed, it is determined whether to terminate the process (S70). If it is determined not to terminate the process, before the next substrate is set, the beam monitoring unit rechecks the difference between the monitored position of the beam and the preset reference position (S20), and then sequentially performs subsequent processes for exposure.

FIG. 10 is a flowchart of a method of controlling an exposure device according to another embodiment of the technology disclosed in the present application.

In the method according to various embodiments, first, a mask is aligned with respect to an exposure device (eg, a beam irradiation unit) ( S10 ). However, if an already aligned mask exists in the exposure device, operation S10 may not be performed. Then, the beam monitoring unit having a fixed position relative to the master stage obtains information on the beam emitted from the beam irradiation unit and passes through the pattern of the mask, and checks the monitored position of the beam incident to the beam monitoring unit based on the obtained information. , and check the difference between the monitored position and the preset reference position (S20). Here, the checked difference determines the degree of the subsequently performed compensation.

Then, before the substrate is set, the alignment key monitoring for obtaining information related to the position of the alignment key of the substrate is adjusted in consideration of the difference between the monitored position of the beam monitored by the beam monitoring unit and the preset reference position of the beam. The location of the unit (S27). In this way, since the detected differences are compensated, a decrease in the exposure accuracy of the exposure apparatus due to, for example, aging effects or thermal effects can be prevented. Here, the adjustment of the position of the alignment key monitoring unit may correspond to an adjustment vector having a preset reference position of the beam as a starting point and a monitored position of the beam monitored by the beam monitoring unit as an end point.

Then, a substrate is prepared (S30). Operation S30 may be, for example, an operation of mounting the substrate on the main stage or on a substrate mounting unit having a position adjustable by the main stage. Then, the alignment key monitoring unit checks the detected position of the alignment key of the substrate, and adjusts the position of the substrate by outputting a substrate position adjustment signal to the main stage in order to allow the alignment key to be set at a preset alignment position (S40').

Then, exposure is performed (S50), and the fully exposed substrate is unloaded (S60). After the set substrate is exposed, it is determined whether to terminate the process (S70). If it is determined not to terminate the process, before the next substrate is set, the beam monitoring unit rechecks the difference between the monitored position of the beam and the preset reference position (S20), and then sequentially performs subsequent processes for exposure.

Although the method of controlling the exposure device is described above, the technology disclosed in the present application is not limited thereto. For example, the techniques disclosed in this application may also cover alignment methods for exposure.

In the alignment method for exposure, according to an embodiment of the technique disclosed in the present application, first, the monitored position of a beam of a pattern emitted from the beam irradiation unit and passed through the mask is checked, and the monitored position is checked against a preset The difference between the reference positions. Then, the substrate is prepared, and the position of the substrate is adjusted in consideration of the difference between the monitored position of the beam and the preset reference position. In this way, since the detected differences are compensated, a reduction in the accuracy of the exposure of the exposure device due to, for example, aging effects or thermal effects can be prevented.

Here, adjusting the position of the substrate may include two steps: allowing the alignment key of the substrate to be set at a preset alignment position with respect to the beam irradiation unit; The adjustment vector of the monitored position of the beam monitored by the monitoring unit additionally adjusts the position of the substrate. Optionally, adjusting the position of the substrate may include a step of: considering a basis vector having a detected position of the alignment key of the substrate as a starting point and having a preset alignment position of the alignment key with respect to the beam irradiation unit as an end point A final vector corresponding to the sum of the adjustment vectors having the preset reference position of the beam as the starting point and the monitored position of the beam as the end point, adjusts the position of the substrate.

In the alignment method according to the current embodiment, it is also possible by checking the monitored position of the beam emitted from the beam irradiation unit and passing through the pattern of the mask, and by checking and considering the distance between the monitored position of the beam and the preset reference position. The difference to adjust the position of the mask.

In this case, if the substrate is set after that, even when the substrate is typically aligned with respect to the beam emitting unit, the intended position of the substrate can be accurately exposed.

In the above description, errors are compensated by moving the substrate or mask. However, the technology disclosed in the present application is not limited thereto. For example, it may be considered that by checking the monitored position of a patterned beam emitted from the beam irradiation unit and passing through the mask, and by checking and taking into account the difference between the monitored position of the beam and a preset reference position, the adjustment for obtaining The position of the alignment key monitoring unit for information related to the position of the alignment key of the substrate. Here, adjusting the position of the alignment key monitoring unit may correspond to an adjustment vector having a preset reference position of the light beam as a starting point and a monitored position of the light beam as an end point.

In this case, if the substrate is set after that, even when the substrate is typically aligned with respect to the beam irradiation unit, the intended position of the substrate can be accurately exposed.

The above-described exposure device, method of controlling the exposure device, and alignment method for exposure may use a laser thermal transfer (LITI) process. That is, the laser beam may be irradiated from the beam irradiation unit 30, the donor film may be disposed between the mask 22 and the substrate 12, and the laser beam may be irradiated to a specific region of the donor film so that a specific organic layer of the donor film may be Transfer to the substrate 12. Since an organic light emitting display device formed with an organic or inorganic layer including an emission layer by using the above-mentioned LITI process functions properly only when the organic or inorganic layer is formed at a precise position, if the above-mentioned exposure device, method of controlling the exposure device, and Based on the alignment method of exposure, high-resolution organic light-emitting display devices can be manufactured with high yield.

As described above, according to the embodiments of the technology disclosed in the present application, it is possible to realize an exposure apparatus, a method of controlling the exposure apparatus, and an alignment for exposure capable of preventing a decrease in exposure accuracy of the exposure apparatus due to, for example, an aging effect or a thermal effect. method. However, the technology disclosed in the present application is not limited to the above effects.

While the invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the invention as defined by the claims. The spirit and scope of the invention.

Claims (24)

1. an exposure device, comprising:

Main, be configured to adjust the position of substrate;

Light beam irradiates unit, is configured to light beam irradiates to mask; And

Light beam monitor unit, has with respect to described main fixing position, and is configured to identify the opening that sends and pass from described light beam irradiates unit described mask to form the light beam of specific pattern.

2. exposure device as claimed in claim 1, also comprises control module, and described control module is configured to the substrate position of the position of described main of output expression and adjusts signal to adjust the position of described substrate.

3. exposure device as claimed in claim 2, wherein, the information that the light beam of described control module based on obtaining with described light beam monitor unit is relevant, exports described substrate position and adjusts signal.

4. exposure device as claimed in claim 3, wherein, described control module be configured to check incide described light beam monitor unit light beam be monitored position, the wherein said position that is monitored is the relevant information of light beam based on obtaining with described light beam monitor unit, described control module, based on the described difference being monitored between position and preset reference position, is exported described substrate position and is adjusted signal.

5. exposure device as claimed in claim 4, wherein, adjust signal from the described substrate position of described control module output and comprise:

Primary importance is adjusted signal, for allowing the alignment key of described substrate to be arranged on default aligned position with respect to described light beam irradiates unit; And

The second place is adjusted signal, corresponding to taking described preset reference position as starting point and taking the described adjustment vector of position as terminal that be monitored.

6. exposure device as claimed in claim 4, also comprise alignment key monitor unit, described alignment key monitor unit is configured to the acquisition information relevant with the position of the alignment key of described substrate, wherein, adjust signal corresponding to base vector and the vectorial sum of adjustment from the described substrate position of described control module output, the detected position of the alignment key of the described substrate that described base vector obtains using described alignment key monitor unit is as starting point, using the described default aligned position with respect to described light beam irradiates unit as terminal, described adjustment vector is using described preset reference position as starting point, using the described position that is monitored as terminal.

7. exposure device as claimed in claim 2, also comprise the mask stage of the position for adjusting described mask, wherein, described control module output represents the mask position adjustment signal of the position of described mask stage, adjusts the position of described mask with the relevant information of the light beam based on obtaining with described light beam monitor unit.

8. exposure device as claimed in claim 7, wherein, described control module is configured to the relevant information of light beam based on obtaining with described light beam monitor unit, inspection incide described light beam monitor unit light beam be monitored position, and described control module, based on the described difference being monitored between position and preset reference position, is exported described mask position and is adjusted signal.

9. exposure device as claimed in claim 2, also comprise alignment key monitor unit, described alignment key monitor unit is configured to the acquisition information relevant with the position of the alignment key of described substrate, and signal is adjusted in the alignment key monitor unit position that described control module output is configured to the position of described alignment key monitor unit to adjust.

10. exposure device as claimed in claim 9, wherein, the information that the light beam of described control module based on obtaining with described light beam monitor unit is relevant, exports described alignment key monitor unit position and adjusts signal.

11. exposure devices as claimed in claim 10, wherein, described control module is configured to the relevant information of light beam based on obtaining with described light beam monitor unit, inspection incide described light beam monitor unit light beam be monitored position, and described control module, based on the described difference being monitored between position and preset reference position, is exported described alignment key monitor unit position and is adjusted signal.

12. exposure devices as claimed in claim 11, wherein, adjust signal corresponding to taking described preset reference position as starting point and taking the described adjustment vector of position as terminal that be monitored from the described alignment key monitor unit position of described control module output.

Control the method for exposure device for 13. 1 kinds, described method comprises:

By thering is the light beam monitor unit of the position fixing with respect to main, obtain and send with from light beam irradiates unit and the relevant information of light beam with formation specific pattern through the opening mask;

The relevant information of light beam based on obtaining with described light beam monitor unit, check incide described light beam monitor unit light beam be monitored position, and be monitored the difference between position and preset reference position described in checking;

Substrate is arranged on described main platform or is arranged on that have can be by the substrate installation unit of the position of described main adjustment; And

By adjusting signal based on the described difference output substrate position being monitored between position and described preset reference position, adjust the position of described substrate.

14. methods as claimed in claim 13, wherein, the position of adjusting described substrate comprises:

Allow the alignment key of described substrate to be arranged on default aligned position with respect to described light beam irradiates unit; And

By taking described preset reference position as starting point and taking the described adjustment vector of position as terminal that be monitored, additionally adjust the position of described substrate.

15. methods as claimed in claim 13, wherein, the position of adjusting described substrate comprises: the position of adjusting described substrate based on final vector, wherein said final vector is corresponding to base vector and the vectorial sum of adjustment, the detected position of the alignment key of the described substrate that described base vector obtains using the alignment key monitor unit by for obtaining the information relevant with the position of the alignment key of described substrate is as starting point, and using the described default aligned position with respect to described light beam irradiates unit as terminal, described adjustment vector is using described preset reference position as starting point, and using the described position that is monitored as terminal.

Control the method for exposure device for 16. 1 kinds, described method comprises:

In the light beam monitor unit with the position fixing with respect to main, obtain to send with from light beam irradiates unit and pass and have and can adjust opening the mask of position to form the relevant information of light beam of specific pattern by mask stage;

The relevant information of light beam based on obtaining with described light beam monitor unit, check incide described light beam monitor unit light beam be monitored position, and be monitored the difference between position and preset reference position described in checking; And

By based on the described difference being monitored between position and described preset reference position, mask position is adjusted to signal and is exported described mask stage to and adjust the position of described mask.

Control the method for exposure device for 17. 1 kinds, described method comprises:

In the light beam monitor unit with the position fixing with respect to main, obtain and send with from light beam irradiates unit and the relevant information of light beam with formation specific pattern through the opening mask;

The relevant information of light beam based on obtaining with described light beam monitor unit, check incide described light beam monitor unit light beam be monitored position, and be monitored the difference between position and preset reference position described in checking; And

Based on the described difference being monitored between position and described preset reference position, adjust the position of the alignment key monitor unit for obtaining the information relevant with the position of the alignment key of described substrate.

18. methods as claimed in claim 17, wherein, the position of adjusting described alignment key monitor unit is corresponding to taking described preset reference position as starting point and taking the described adjustment vector of position as terminal that be monitored.

19. 1 kinds of alignment schemes for exposing, described alignment schemes comprises:

Check send from described light beam irradiates unit and through the opening of mask with form specific pattern light beam be monitored position, and be monitored the difference between position and preset reference position described in checking;

Substrate is set; And

Based on the described difference being monitored between position and described preset reference position, adjust the position of described substrate.

20. alignment schemes as claimed in claim 19, wherein, the position of adjusting described substrate comprises:

Allow the alignment key of described substrate to be arranged on default aligned position with respect to described light beam irradiates unit; And

By taking described preset reference position as starting point and taking the described adjustment vector of position as terminal that be monitored, additionally adjust the position of described substrate.

21. alignment schemes as claimed in claim 19, wherein, the position of adjusting described substrate comprises the position of adjusting described substrate based on final vector, described final vector is corresponding to base vector and the vectorial sum of adjustment, described base vector is using the detected position of the alignment key of described substrate as starting point and using the described default aligned position with respect to described light beam irradiates unit as terminal, and described adjustment vector is using described preset reference position as starting point and using the described position that is monitored as terminal.

22. 1 kinds of alignment schemes for exposing, described alignment schemes comprises:

Check send from light beam irradiates unit and through the opening mask with form specific pattern light beam be monitored position, and be monitored the difference between position and preset reference position described in checking; And

Based on the described difference being monitored between position and described preset reference position, adjust the position of described mask.

23. 1 kinds of alignment schemes for exposing, described alignment schemes comprises:

Check send from light beam irradiates unit and through the opening mask with form specific pattern light beam be monitored position, and be monitored the difference between position and preset reference position described in checking; And

Based on the described difference being monitored between position and described preset reference position, adjust the position of the alignment key monitor unit for obtaining the information relevant with the position of the alignment key of described substrate.

24. alignment schemes as claimed in claim 23, wherein, the position of adjusting described alignment key monitor unit is corresponding to taking described preset reference position as starting point and taking the described adjustment vector of position as terminal that be monitored.

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