CN103871809A - Wide-beam ion source device used for ion implanter - Google Patents
Wide-beam ion source device used for ion implanter Download PDFInfo
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- CN103871809A CN103871809A CN201210530299.2A CN201210530299A CN103871809A CN 103871809 A CN103871809 A CN 103871809A CN 201210530299 A CN201210530299 A CN 201210530299A CN 103871809 A CN103871809 A CN 103871809A
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Abstract
The invention discloses a wide-beam ion source device used for an ion implanter. The device comprises a source magnetic field iron core, a source magnetic field coil, an arc chamber and an extraction electrode, one end of the arc chamber is provided with a first filament and a first cathode, the other end of the arc chamber is provided with a second filament and a second cathode, the first filament and the second filament are connected with filament power supplies respectively, a first bias power supply is connected between the first filament and the first cathode, a second bias power supply is connected between the second filament and the second cathode, a first arc voltage power supply is connected between the first cathode and the arc chamber, and a second arc voltage power supply is connected between the second cathode and the arc chamber. Since the arc chamber adopts an indirect-heating type double-cathode structure with double filaments and double cathodes, so that a gas medium and hot electrons emitted by the cathodes fully collide, and a relatively wide ion beam and relatively high beam intensity can be generated, thereby facilitating increase of the width of the ion beam, and directly obtaining a parallel wide-band beam that covers the width of a target implantation silicon wafer.
Description
Technical field
The present invention relates to ion implantor technical field, particularly a kind of Broad beam ion source device for ion implantor.
Background technology
Broad beam ion source device is the core component of ion implantor, and it is for generation of broadband ion beam.As shown in Figure 1, Broad beam ion source device of the prior art comprises source field core, is wrapped in source field coil, arc chamber 3 and extraction electrode on the field core of described source, the bottom of arc chamber 3 is provided with injection well, and the top of arc chamber 3 is provided with draws seam, and described extraction electrode is drawn outside seam described in being located at.Wherein, arc chamber 3 adopts single filament, single negative electrode to add the indirected heated cathode structure of repellel, source field core comprises the left iron core 13 and the right iron core 14 that are arranged on arc chamber 3 both end sides, source field coil comprises the left coil 23 and the right coil 24 that are wrapped in respectively on left iron core 13 and right iron core 14 is set, and left iron core 13 is connected by yoke 8 with right iron core 14.Owing to being only provided with single negative electrode in one end of arc chamber 3, single negative electrode is in the cavity of arc chamber 3 when heat of emission electronics, hot electron cannot arrive the space place away from from negative electrode, also just cannot with arc chamber 3 other ends near gas medium bump, so the length of arc chamber 3 is generally smaller, the length of correspondingly drawing seam is also smaller, the seam of drawing of the Broad beam ion source device on the ion implantor of prior art is 100 millimeters to the maximum, in the time that target injection silicon chip width is larger, cannot directly obtain the parallel broadband line that coverage goal injects silicon chip width, need to adopt the halved tie in the light path of ion implantor of complicated light channel structure to flow to line width expansion and angle modification, could obtain the parallel broadband line that coverage goal injects silicon chip width, complete Implantation.
Summary of the invention
The object of this invention is to provide a kind of Broad beam ion source device for ion implantor, cannot produce wider ion beam to solve Broad beam ion source device of the prior art, inject silicon chip width when larger when target, need complicated light channel structure halved tie to flow to line width expansion and angle modification just to complete the problem of Implantation.
To achieve these goals, the invention provides a kind of Broad beam ion source device for ion implantor, comprise source field core, be wrapped in the source field coil on the field core of described source, arc chamber and extraction electrode, the bottom of described arc chamber is provided with injection well, the top of described arc chamber is provided with draws seam, described extraction electrode is drawn outside seam described in being located at, one end of described arc chamber is provided with the first filament and the first negative electrode, the other end of described arc chamber is provided with the second filament and the second negative electrode, described the first filament is connected respectively filament supply with the second filament, between described the first filament and the first negative electrode, connect the first bias supply, between described the second filament and the second negative electrode, connect the second bias supply, between described the first negative electrode and arc chamber, be connected the first arc voltage power supply, between described the second negative electrode and arc chamber, be connected the second arc voltage power supply.
As preferably, the bottom of described arc chamber is provided with gas even flow plate, on described gas even flow plate with multiple even flow plate pores.
As preferred further, described multiple even flow plate pores are evenly arranged on described gas even flow plate.
As preferably, described source field core comprises upper core and lower core, described upper core and lower core are arranged in the both sides of described arc chamber, described upper core and lower core are about the axis symmetry along its length of described arc chamber, and described source field coil comprises the upper coil being wrapped on described upper core and is wrapped in the lower coil on described lower core.
As preferred further, described upper coil and lower coil are respectively single coil.
As preferred further, described upper coil and lower coil comprise respectively multiple independently subcoils.
As preferred further, described upper coil comprises first subcoil of magnetic field intensity at the two ends, inside for regulating described arc chamber and the second subcoil and for regulating the 3rd subcoil of the magnetic field intensity at middle part in described arc chamber, described the 3rd subcoil is between described the first subcoil and the second subcoil, and described lower coil has identical structure with upper coil.
As preferably, described in draw seam length more than 300 millimeters.
Compared with prior art, the present invention has following beneficial effect:
1) two indirected heated cathode structures of two filaments, twin cathode have been adopted due to arc chamber, the hot electron that gas medium and cathode emission are gone out fully bumps, can produce wider ion beam and stronger beam intensity, so can expand easily ion beam width, directly obtain the parallel broadband line of coverage goal injection silicon chip width;
2) be arranged on the both sides of arc chamber due to source field core and source field coil, significantly improve in the magnetic field that the uniformity in magnetic field produces than traditional structure, and have the ability of further expansion arc chamber size.
Brief description of the drawings
Fig. 1 is the structural representation in prior art intermediate ion source;
Fig. 2 is the structural representation of the Broad beam ion source device of the embodiment of the present invention one;
Fig. 3 is the structural representation of the arc chamber of the Broad beam ion source device shown in Fig. 2;
Fig. 4 is the structural representation of the gas even flow plate of the arc chamber shown in Fig. 3;
Fig. 5 is the view that ion beam is drawn from the Broad beam ion source device of the present embodiment one;
Fig. 6 is the structural representation of the Broad beam ion source device of the embodiment of the present invention two.
Main description of reference numerals:
11, upper core 12, lower core
13, left iron core 14, right iron core
21, upper coil 22, lower coil
23, left coil 24, right coil
211, the first subcoil 212, the second subcoil
213, the 3rd subcoil
3, arc chamber
31, the first filament 32, the second filament
33, the first negative electrode 34, the second negative electrode
35, injection well 36, draw seam
37, gas even flow plate 371, even flow plate pore
41, the first filament supply 42, the second filament supply
51, the first bias supply 52, the second bias supply
61, the first arc voltage power supply 62, the second arc voltage power supply
7, source magnetic field power supply
8, yoke
9, extraction electrode
10, ion beam
Embodiment
Below in conjunction with accompanying drawing, specific embodiments of the invention are elaborated.
Embodiment mono-:
As shown in Figures 2 to 5, the Broad beam ion source device for ion implantor of embodiment mono-comprises source field core, be wrapped in the source field coil on the field core of source, arc chamber 3 and extraction electrode 9, the bottom of arc chamber 3 is provided with injection well 35, the top of arc chamber 3 is provided with draws seam 36, extraction electrode 9 is located at and is drawn outside seam 36, one end of arc chamber 3 is provided with the first filament 31 and the first negative electrode 33, the other end of arc chamber 3 is provided with the second filament 32 and the second negative electrode 34, the first filament 31 is connected respectively filament supply with the second filament 32, between the first filament 31 and the first negative electrode 33, connect the first bias supply 51, between the second filament 32 and the second negative electrode 34, connect the second bias supply 52, between the first negative electrode 33 and arc chamber 3, be connected the first arc voltage power supply 61, between the second negative electrode 34 and arc chamber 3, be connected the second arc voltage power supply 62.
Source field coil is connected with source magnetic field power supply 7 with in the interior generation of arc chamber 3 magnetic field, source field coil can adopt the both end sides of the structural configuration shown in Fig. 1 at arc chamber 3, also can adopt other arrangements, as long as can produce more uniform magnetic field in the cavity of arc chamber 3.
Gas medium (as boron trifluoride) is sent in arc chamber 3 by being arranged on the injection well 35 of arc chamber 3 bottoms; The cation producing in arc chamber 3 is drawn electric field attracts, from being arranged on the cavity that seam 36 leaves arc chamber 3 of drawing at arc chamber 3 tops.
Filament supply comprises the first filament supply 41 and the second filament supply 42, the first filament 31 connects the first filament supply 41, the second filament 32 connects the second filament supply 42, when the first filament supply 41 and the second filament supply 42 are powered, can be to respectively the first filament 31 and the second filament 32 being heated, when the temperature of the first filament 31 and the second filament 32 reaches after certain value, start to launch hot electron.
The first bias supply 51 and the second bias supply 52 are connected between filament and negative electrode, for accelerating the hot electron that filament emission goes out, after hot electron is accelerated, obtain energy, bombard respectively to the inner surface of the first negative electrode 33 and the second negative electrode 34, the first negative electrode 33 and the second negative electrode 34 are produced to heating effect; The temperature of the first negative electrode 33 and the second negative electrode 34 reaches after certain value, and the outer surface of negative electrode starts heat of emission electronics.
The first arc voltage power supply 61 and the second arc voltage power supply 62 are connected between negative electrode and the cavity of arc chamber 3, for the hot electron emitting from the outer surface of negative electrode is accelerated, make the hot electron emitting from cathode outer surface accelerate to move in the cavity of arc chamber 3.
In the present embodiment, as preferred implementation, draw the length of seam 36 more than 300 millimeters.Because the arc chamber 3 of the Broad beam ion source device of embodiment mono-has adopted two indirected heated cathode structures of two filaments, twin cathode, make hot electron that cathode emission goes out fully arrive each position of the inside cavity of arc chamber 3, fully bump with gas medium, can produce wider ion beam 10 and stronger beam intensity, so can expand easily ion beam 10 width, directly obtain the parallel broadband line of coverage goal injection silicon chip width.As shown in Figure 5, the Broad beam ion source device of embodiment mono-can produce the ion beam 10 of width more than 300 millimeters.
In the present embodiment, as preferred implementation, the bottom in arc chamber 3 is provided with gas even flow plate 37, and on gas even flow plate 37, with multiple even flow plate pores 371, multiple even flow plate pores 371 are evenly arranged on gas even flow plate 37; Gas medium is evenly distributed in the cavity of arc chamber 3 by the even flow plate pore 371 on gas even flow plate 37 enter in the cavity of arc chamber 3 from being arranged on the injection well 35 of arc chamber 3 bottoms.
In order to obtain more uniform Distribution of Magnetic Field in the cavity of arc chamber 3, in the present embodiment, as preferred implementation, source field core comprises upper core 11 and lower core 12, upper core 11 and lower core 12 are arranged in the both sides of arc chamber 3, upper core 11 and lower core 12 be about the axis symmetry along its length of arc chamber 3, and source field coil comprises the upper coil 21 being wrapped on upper core 11 and be wrapped in the lower coil 22 on lower core 12, and upper coil 21 and lower coil 22 are respectively single coil; Upper coil 21 is all connected with source magnetic field power supply 7 with lower coil 22, when after 7 energisings of source magnetic field power supply, can in the cavity of arc chamber 3, produce uniform magnetic field, significantly improve in the magnetic field that the uniformity in magnetic field produces than traditional structure, and have the ability of further expansion arc chamber 3 sizes.
Adopt the method for the Broad beam ion source device generation ion beam 10 of embodiment mono-to comprise the following steps:
1, machine system is supplied gas, and arc chamber 3 pressure are controlled to desired value;
2, source magnetic field power supply 7 is powered, and supply voltage is set to appropriate value, obtains suitable source magnetic field B in arc chamber 3 spaces;
3, the first filament supply 41 and the second filament supply 42 are powered, heat filament, and filament temperature is launched hot electron after reaching certain value;
4, the first bias supply 51 and the second bias supply 52 are powered, and are connected between filament and negative electrode, and supply voltage is set to desired value, to accelerating from filament hot electron out, after hot electron is accelerated, obtain energy, bombardment is to cathode inner surface, and target produces heating effect;
5, negative electrode temperature after hot electron bombardment raises, and starts heat of emission electronics after reaching certain value;
6, the first arc voltage power supply 61 and the second arc voltage power supply 62 are powered, and the hot electron emitting from cathode outer surface is accelerated;
7, the hot electron being accelerated by arc voltage accelerates to move to the cavity of arc chamber 3, but is subject to the constraint of arc chamber 3 axis direction source magnetic field B simultaneously, thereby deflects, along the screw of B direction;
8, electronics bumps with the interior gas of arc chamber 3 in high-speed motion process, gas molecule loses electronics and becomes ion, electronics loses portion of energy but continues motion, be subject to equally arc voltage and source magnetic field B control from gas collisions electronics out, join high-speed screw moving electron ranks, to the cavity inner wall motion of arc chamber 3, electron collision produces chain reaction; The movement locus that produces the electronics of screw extends greatly than the situation that screw does not occur, and has improved the collision probability of other molecule in electronics and arc chamber 3, thereby improves the ionization level of arc chamber 3 interior gases;
9, finally arrive arc chamber 3 inwalls from the electronics of cathode emission, absorbed and form arc stream, the interior generation electric discharge phenomena of arc chamber 3 by arc chamber 3 inwalls; Suitable filament supply voltage, bias voltage, arc voltage and source magnetic field intensity B, can maintain the discharge stability work in arc chamber 3, at the stable plasma of the interior generation of arc chamber 3;
10, the cation in plasma is drawn electric field attracts, leaves the cavity of arc chamber 3 from drawing seam 36, and is drawn electric field acceleration, forms needed line.
Embodiment bis-:
As shown in Figure 6, the Broad beam ion source device of embodiment bis-is only that from the difference of the Broad beam ion source device of embodiment mono-source field coil is different, and all the other structures are all identical.Only just difference part is elaborated below.
For improving the distribution in magnetic field, source, in embodiment bis-, adopt the magnetic field, source of multi-coil structure, can, by regulating the drive current of each coil, further regulate the uniform distribution state of magnetic field, source in arc chamber 3 intervals, improve the uniform distribution of broadband line.
Source field core comprises upper core 11 and lower core 12, upper core 11 and lower core 12 are arranged in the both sides of arc chamber 3, upper core 11 and lower core 12 are about the axis symmetry along its length of arc chamber 3, source field coil comprises the upper coil 21 being wrapped on upper core 11 and is wrapped in the lower coil 22 on lower core 12, and upper coil 21 and lower coil 22 comprise respectively multiple independently subcoils; Can regulate according to actual needs the quantity of every sideline circle and bulk and distribution at arc chamber 3 axis directions, to obtain the ion source Distribution of Magnetic Field state of satisfying the demand.
In embodiment bis-, as preferred implementation, upper coil 21 comprises first subcoil 211 of magnetic field intensity at the two ends, inside for regulating arc chamber 3 and the second subcoil 212 and for regulating the 3rd subcoil 213 of magnetic field intensity at arc chamber 3 interior middle parts, the 3rd subcoil 213 is between the first subcoil 211 and the second subcoil 212, and lower coil 22 has identical structure with upper coil 21.
The first subcoil 211 in the field coil of source and the second subcoil 212 regulate the magnetic field intensity at arc chamber 3 interval two ends, and the drive current of the first subcoil 211 and the second subcoil 212 strengthens, and improve in magnetic field, two ends, and drive current reduces, and magnetic field, two ends reduces;
The 3rd subcoil 213 in the field coil of source regulates the magnetic field intensity at arc chamber 3 interval middle parts, and the drive current of the 3rd subcoil 213 strengthens, and improve in magnetic field, middle part, and drive current reduces, and magnetic field, middle part reduces.
Above embodiment is only exemplary embodiment of the present invention, is not used in restriction the present invention, and protection scope of the present invention is defined by the claims.Those skilled in the art can, in essence of the present invention and protection range, make various amendments or be equal to replacement the present invention, this amendment or be equal to replacement and also should be considered as dropping in protection scope of the present invention.
Claims (8)
1. the Broad beam ion source device for ion implantor, comprise source field core, be wrapped in the source field coil on the field core of described source, arc chamber and extraction electrode, the bottom of described arc chamber is provided with injection well, the top of described arc chamber is provided with draws seam, described extraction electrode is drawn outside seam described in being located at, it is characterized in that, one end of described arc chamber is provided with the first filament and the first negative electrode, the other end of described arc chamber is provided with the second filament and the second negative electrode, described the first filament is connected respectively filament supply with the second filament, between described the first filament and the first negative electrode, connect the first bias supply, between described the second filament and the second negative electrode, connect the second bias supply, between described the first negative electrode and arc chamber, be connected the first arc voltage power supply, between described the second negative electrode and arc chamber, be connected the second arc voltage power supply.
2. the Broad beam ion source device for ion implantor according to claim 1, is characterized in that, the bottom in described arc chamber is provided with gas even flow plate, on described gas even flow plate with multiple even flow plate pores.
3. the Broad beam ion source device for ion implantor according to claim 2, is characterized in that, described multiple even flow plate pores are evenly arranged on described gas even flow plate.
4. the Broad beam ion source device for ion implantor according to claim 1, it is characterized in that, described source field core comprises upper core and lower core, described upper core and lower core are arranged in the both sides of described arc chamber, described upper core and lower core are about the axis symmetry along its length of described arc chamber, and described source field coil comprises the upper coil being wrapped on described upper core and is wrapped in the lower coil on described lower core.
5. the Broad beam ion source device for ion implantor according to claim 4, is characterized in that, described upper coil and lower coil are respectively single coil.
6. the Broad beam ion source device for ion implantor according to claim 4, is characterized in that, described upper coil and lower coil comprise respectively multiple independently subcoils.
7. the Broad beam ion source device for ion implantor according to claim 6, it is characterized in that, described upper coil comprises first subcoil of magnetic field intensity at the two ends, inside for regulating described arc chamber and the second subcoil and for regulating the 3rd subcoil of the magnetic field intensity at middle part in described arc chamber, described the 3rd subcoil is between described the first subcoil and the second subcoil, and described lower coil has identical structure with upper coil.
8. according to the Broad beam ion source device for ion implantor described in any one in claim 1 to 7, it is characterized in that, described in draw seam length more than 300 millimeters.
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| CN201210530299.2A CN103871809A (en) | 2012-12-11 | 2012-12-11 | Wide-beam ion source device used for ion implanter |
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| CN201210530299.2A CN103871809A (en) | 2012-12-11 | 2012-12-11 | Wide-beam ion source device used for ion implanter |
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Cited By (6)
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| US9978554B1 (en) | 2017-01-26 | 2018-05-22 | Varian Semiconductor Equipment Associates, Inc. | Dual cathode ion source |
| CN108377607A (en) * | 2018-03-07 | 2018-08-07 | 中国原子能科学研究院 | A kind of electromagnet system for ion source plasma experimental apparatus for testing |
| CN111081529A (en) * | 2019-12-31 | 2020-04-28 | 四川红华实业有限公司 | Electron bombardment type ion source with double-filament structure and double-filament working method thereof |
| CN111128651A (en) * | 2018-10-31 | 2020-05-08 | 北京中科信电子装备有限公司 | Plasma shower power supply control method |
| CN111551628A (en) * | 2020-06-08 | 2020-08-18 | 中国计量科学研究院 | A kind of electron bombardment ionization source device, ionization bombardment method and material analysis method |
| CN114258182A (en) * | 2021-12-17 | 2022-03-29 | 离子束(广州)装备科技有限公司 | Cusp field ion source and ion beam generating method |
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| CN111081529B (en) * | 2019-12-31 | 2023-08-15 | 四川红华实业有限公司 | Electron bombardment type ion source with double-filament structure and double-filament working method thereof |
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| CN111551628B (en) * | 2020-06-08 | 2022-09-06 | 中国计量科学研究院 | Electron bombardment ionization source device, ionization bombardment method and substance analysis method |
| CN114258182A (en) * | 2021-12-17 | 2022-03-29 | 离子束(广州)装备科技有限公司 | Cusp field ion source and ion beam generating method |
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Application publication date: 20140618 |