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CN103929131B - Doubler and signal frequency multiplication method - Google Patents

Doubler and signal frequency multiplication method Download PDF

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CN103929131B
CN103929131B CN201310010884.4A CN201310010884A CN103929131B CN 103929131 B CN103929131 B CN 103929131B CN 201310010884 A CN201310010884 A CN 201310010884A CN 103929131 B CN103929131 B CN 103929131B
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transistor
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CN103929131A (en
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朱书纬
王耀祺
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MediaTek Inc
MStar Semiconductor Inc Taiwan
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MSTAR SEMICONDUCTOR CO Ltd
MStar Software R&D Shenzhen Ltd
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Abstract

本发明涉及一种倍频器以及信号倍频方法。本发明的倍频器,包含:一第一阻抗模块,一第二阻抗模块,一第一路径以及一第二路径。第一路径导通时,第一阻抗模块产生一第一输出信号且第二阻抗模块产生一第二输出信号。第二路径导通时,第一阻抗模块产生一第三输出信号且第二阻抗模块产生一第四输出信号。第一路径与第二路径不同时导通,且第一、第三输出信号组出的一第一合成信号的频率以及第二、第四输出信号组出的一第二合成信号的频率为输入信号频率的N倍,其中N为一正有理数。

The invention relates to a frequency multiplier and a signal frequency multiplication method. The frequency multiplier of the present invention includes: a first impedance module, a second impedance module, a first path and a second path. When the first path is turned on, the first impedance module generates a first output signal and the second impedance module generates a second output signal. When the second path is turned on, the first impedance module generates a third output signal and the second impedance module generates a fourth output signal. The first path and the second path are not conducted at the same time, and the frequency of a first composite signal obtained from the first and third output signals and the frequency of a second composite signal obtained from the second and fourth output signals are input N times the signal frequency, where N is a positive rational number.

Description

倍频器以及信号倍频方法Frequency multiplier and signal frequency multiplication method

技术领域technical field

本发明有关于具有倍频器以及信号倍频方法,特别有关于可降低电能消耗的倍频器以及信号倍频方法。The invention relates to a frequency multiplier and a signal frequency multiplication method, in particular to a frequency multiplier and a signal frequency multiplication method capable of reducing power consumption.

背景技术Background technique

已知技术中,通常会以一倍频器来使一信号的频率增加。然而,倍频器通常仅产生单一输出信号,若欲产生差动信号,则须额外增加电路。因此不仅会增加电能的消耗,亦增加了电路的面积。In the known technology, a frequency multiplier is usually used to increase the frequency of a signal. However, frequency multipliers usually only generate a single output signal, and additional circuits must be added to generate differential signals. Therefore, not only the consumption of electric energy will be increased, but also the area of the circuit will be increased.

发明内容Contents of the invention

因此,本发明的一个目的为提供一种不使用额外的电路仍可产生差动信号的倍频器。Therefore, it is an object of the present invention to provide a frequency multiplier capable of generating differential signals without using additional circuits.

本发明的另一目的为提供一种不使用额外的电路仍可产生差动信号的信号倍频方法。Another object of the present invention is to provide a signal frequency multiplication method capable of generating differential signals without using additional circuits.

本发明一实施例揭示了一种倍频器,包含:一第一输出端;一第二输出端;一第一阻抗模块,其一端耦接一第一预定电位,另一端耦接至该第一输出端;一第二阻抗模块,其一端耦接一第二预定电位,另一端耦接至该第二输出端;一第一路径,耦接于该第一输出端和该第二输出端之间;以及一第二路径,耦接于该第一输出端和该第二输出端之间;其中该第一路径以及该第二路径分别接收一输入信号以及一反相输入信号,该反相输入信号的相位和该输入信号反相,该第一路径以及该第二路径由该输入信号以及该反相输入信号决定导通或不导通;该第一路径导通时,一第一电流自该第一阻抗模块流出并流经该第一路径以流入该第二阻抗模块,藉此该第一阻抗模块在该第一输出端产生一第一输出信号且该第二阻抗模块在该第二输出端产生一第二输出信号;其中该第二路径导通时,一第二电流自该第一阻抗模块流出并流经该第二路径并流入该第二阻抗模块,藉此该第一阻抗模块在该第一输出端产生一第三输出信号且该第二阻抗模块在该第二输出端产生一第四输出信号;其中该第一路径与该第二路径不同时导通,且该第一输出信号与该第三输出信号组出的一第一合成信号的频率以及第二输出信号与该第四输出信号组出的一第二合成信号的频率为该输入信号频率的N倍,其中N为一正有理数。An embodiment of the present invention discloses a frequency multiplier, comprising: a first output terminal; a second output terminal; a first impedance module, one end of which is coupled to a first predetermined potential, and the other end is coupled to the first predetermined potential An output end; a second impedance module, one end of which is coupled to a second predetermined potential, and the other end is coupled to the second output end; a first path, coupled to the first output end and the second output end and a second path, coupled between the first output terminal and the second output terminal; wherein the first path and the second path respectively receive an input signal and an inverted input signal, and the inverted The phase of the phase input signal is inverse to the input signal, and the first path and the second path are turned on or off depending on the input signal and the inverted input signal; when the first path is turned on, a first The current flows out from the first impedance module and flows through the first path to flow into the second impedance module, whereby the first impedance module generates a first output signal at the first output terminal and the second impedance module generates a first output signal at the first output terminal. The second output terminal generates a second output signal; wherein when the second path is turned on, a second current flows out from the first impedance module, flows through the second path and flows into the second impedance module, whereby the first impedance module An impedance module generates a third output signal at the first output end and the second impedance module generates a fourth output signal at the second output end; wherein the first path and the second path are not simultaneously conducted, and The frequency of a first composite signal composed of the first output signal and the third output signal and the frequency of a second composite signal composed of the second output signal and the fourth output signal are N times the frequency of the input signal , where N is a positive rational number.

本发明一实施例揭示了一种信号倍频方法,使用在一倍频器上。此倍频器包含一第一路径、一第二路径、一第一阻抗模块以及一第二阻抗模块,此信号倍频方法包含:以该第一路径以及该第二路径分别接收一输入信号以及一反相输入信号,该反相输入信号的相位和该输入信号反相,该第一路径以及该第二路径由该输入信号以及该反相输入信号决定导通或不导通;使一第一电流在该第一路径导通时自该第一阻抗模块流出并流经该第一路径以流入该第二阻抗模块,以使该第一阻抗模块在该第一输出端产生一第一输出信号且使该第二阻抗模块在该第二输出端产生一第二输出信号;使一第二电流在该第二路径导通时自该第一阻抗模块流出并流经该第一路径以流入该第二阻抗模块,以使该第一阻抗模块在该第一输出端产生一第三输出信号且使该第二阻抗模块在该第二输出端产生一第四输出信号;以该第一输出信号以及该第三输出信号合成出一第一合成信号;以及以该第二输出信号以及该第四输出信号合成出一第二合成信号;其中该第一路径与该第二路径不同时导通,且该第一合成信号以及第二合成信号的频率为该输入信号频率的N倍,其中N为一正有理数。An embodiment of the present invention discloses a signal frequency multiplication method, which is used in a frequency multiplier. The frequency multiplier includes a first path, a second path, a first impedance module, and a second impedance module. The signal frequency multiplication method includes: using the first path and the second path to respectively receive an input signal and An inverting input signal, the phase of the inverting input signal is inverse to the input signal, the first path and the second path are determined to be conductive or non-conductive by the input signal and the inverting input signal; A current flows out from the first impedance module and flows through the first path to flow into the second impedance module when the first path is turned on, so that the first impedance module generates a first output at the first output terminal signal and make the second impedance module generate a second output signal at the second output terminal; make a second current flow out from the first impedance module and flow through the first path to flow in when the second path is turned on The second impedance module, so that the first impedance module generates a third output signal at the first output end and makes the second impedance module generate a fourth output signal at the second output end; with the first output signal and the third output signal to synthesize a first composite signal; and synthesize a second composite signal with the second output signal and the fourth output signal; wherein the first path and the second path are not simultaneously turned on , and the frequencies of the first composite signal and the second composite signal are N times the frequency of the input signal, where N is a positive rational number.

藉由前述的实施例,可以在不须额外电路的情况下,产生倍频后的差动信号,可降低电能消耗并减少电路面积。By means of the aforementioned embodiments, the frequency-multiplied differential signal can be generated without additional circuits, which can reduce power consumption and circuit area.

附图说明Description of drawings

图1绘示了根据本发明一实施例的倍频器。FIG. 1 illustrates a frequency multiplier according to an embodiment of the invention.

图2绘示了图1所示的倍频器的详细电路的其中一例。FIG. 2 illustrates an example of the detailed circuit of the frequency multiplier shown in FIG. 1 .

图3绘示了图2所示的倍频器的电流以及各信号间关系的示意图。FIG. 3 is a schematic diagram illustrating the current of the frequency multiplier shown in FIG. 2 and the relationship among various signals.

图4至图6绘示了图1所示的倍频器的详细电路的其他例子。4 to 6 illustrate other examples of detailed circuits of the frequency multiplier shown in FIG. 1 .

图7绘示了根据本发明一实施例的信号倍频方法。FIG. 7 illustrates a signal frequency multiplication method according to an embodiment of the present invention.

主要元件符号说明Description of main component symbols

100、400、500、600倍频器100, 400, 500, 600 multiplier

101第一路径101 First Path

103第二路径103 Second Path

105第一阻抗模块105 first impedance module

107第二阻抗模块107 second impedance module

To1第一输出端T o1 first output terminal

To2第二输出端T o2 second output terminal

C、C1、C2电容C, C1, C2 capacitance

L1、L2电感L 1 , L 2 inductance

Ca1、Ca2可变电容C a1 , C a2 variable capacitance

N1第一NMOSFETN 1st NMOSFET

N2第二NMOSFETN 2nd NMOSFET

P1第一PMOSFETP 1 First PMOSFET

P2第二PMOSFETP2 Second PMOSFET

T1N1、T1N2、T1P1、T1P2第一端T 1N1 , T 1N2 , T 1P1 , T 1P2 first end

T2N1、T2N2、T2P1、T2P2第二端T 2N1 , T 2N2 , T 2P1 , T 2P2 second terminal

TCN1、TCN2、TCP1、TCP2控制端T CN1 , T CN2 , T CP1 , T CP2 control terminals

Tc连接点T c connection point

具体实施方式detailed description

图1绘示了根据本发明一实施例的倍频器100。如图1所示,倍频器100包含了一第一输出端To1、一第二输出端To2、一第一路径101、一第二路径103、一第一阻抗模块105以及一第二阻抗模块107。第一路径101和第二路径103均耦接于第一输出端To1和第二输出端To2之间。其中第一路径101以及第二路径103分别接收一输入信号Vin+以及一反相输入信号Vin-。反相输入信号Vin-的相位和输入信号Vin+反相,第一路径101以及第二路径103由输入信号Vin+以及反相输入信号Vin-决定导通或不导通。第一路径101导通时,一第一电流I1自第一阻抗模块101流出并流经第一路径101以流入第二阻抗模块107,藉此第一阻抗模块101在第一输出端To1产生一第一输出信号Vo1且第二阻抗模块Vo2在第二输出端To2产生一第二输出信号Vo2。第二路径103导通时,一第二电流I2自第一阻抗模块105流出并流经第二路径103并流入第二阻抗模块107,藉此第一阻抗模块105在第一输出端To1产生一第三输出信号Vo3且第二阻抗模块103在第二输出端产To2产生一第四输出信号Vo4。第一输出信号Vo1与第三输出信号Vo3会合成出一第一合成信号Vc1,且第二输出信号Vo2与第四输出信号Vo4会合成出一第二合成信号Vc2。其中第一路径101与第二路径103不同时导通,且第一合成信号Vc1的频率以及第二合成信号Vc2的频率为输入信号Vin+或反相输入信号Vin-频率的N倍,其中N为一正有理数。FIG. 1 illustrates a frequency multiplier 100 according to an embodiment of the invention. As shown in FIG. 1 , the frequency multiplier 100 includes a first output terminal T o1 , a second output terminal T o2 , a first path 101 , a second path 103 , a first impedance module 105 and a second Impedance module 107 . Both the first path 101 and the second path 103 are coupled between the first output terminal T o1 and the second output terminal T o2 . The first path 101 and the second path 103 respectively receive an input signal V in+ and an inverted input signal V in− . The phase of the inverting input signal V in- is inverse to that of the input signal V in+ , and the first path 101 and the second path 103 are conducting or not conducting according to the input signal V in+ and the inverting input signal V in- . When the first path 101 is turned on, a first current I1 flows out from the first impedance module 101 and flows through the first path 101 to flow into the second impedance module 107, whereby the first impedance module 101 is at the first output T o1 A first output signal V o1 is generated and the second impedance module V o2 generates a second output signal V o2 at the second output terminal T o2 . When the second path 103 is turned on, a second current I2 flows out from the first impedance module 105, flows through the second path 103 and flows into the second impedance module 107, whereby the first impedance module 105 is at the first output T o1 A third output signal V o3 is generated and the second impedance module 103 generates T o2 at the second output terminal to generate a fourth output signal V o4 . The first output signal V o1 and the third output signal V o3 are combined to generate a first composite signal V c1 , and the second output signal V o2 and the fourth output signal V o4 are combined to generate a second composite signal V c2 . Wherein the first path 101 and the second path 103 are not conducted at the same time, and the frequency of the first composite signal V c1 and the frequency of the second composite signal V c2 are N times the frequency of the input signal V in+ or the inverted input signal V in- , where N is a positive rational number.

图2绘示了图1所示的倍频器的详细电路的其中一例,但并非用以限定本发明。如图2所示,倍频器100的第一路径101包含了第一NMOSFET(N type metal–oxide–semiconductor field-effect transistor)N1以及第一P NMOSFET(P type metal–oxide–semiconductor field-effect transistor)P1。第二路径103包含了第二NMOSFET N2以及第二PMOSFET P2。第一阻抗模块105包含了电感L1以及可变电容Ca1,而第二阻抗模块107包含了电感L2以及可变电容Ca2。第一NMOSFET N1包含了第一端T1N1、第二端T2N1以及控制端TCN1。第一PMOSFET P1包含了第一端T1P1、第二端T2P1以及控制端TCP1。第二NMOSFET N2包含了第一端T1N2、第二端T2N2以及控制端TCN2。第二PMOSFET P2包含了第一端T1P2、第二端T2P2以及控制端TCP2。各元件间的连接关系已详细绘示于第2图,故在此不再赘述。请留意NMOSFET以及PMOSFET亦可由其他类型的晶体管所代替。FIG. 2 illustrates an example of the detailed circuit of the frequency multiplier shown in FIG. 1 , but is not intended to limit the present invention. As shown in FIG. 2 , the first path 101 of the frequency multiplier 100 includes a first NMOSFET (N type metal–oxide–semiconductor field-effect transistor) N 1 and a first P NMOSFET (P type metal–oxide–semiconductor field- effect transistor) P 1 . The second path 103 includes a second NMOSFET N 2 and a second PMOSFET P 2 . The first impedance module 105 includes an inductor L 1 and a variable capacitor C a1 , and the second impedance module 107 includes an inductor L 2 and a variable capacitor C a2 . The first NMOSFET N 1 includes a first terminal T 1N1 , a second terminal T 2N1 and a control terminal T CN1 . The first PMOSFET P 1 includes a first terminal T 1P1 , a second terminal T 2P1 and a control terminal T CP1 . The second NMOSFET N 2 includes a first terminal T 1N2 , a second terminal T 2N2 and a control terminal T CN2 . The second PMOSFET P 2 includes a first terminal T 1P2 , a second terminal T 2P2 and a control terminal T CP2 . The connection relationship among the components has been shown in detail in FIG. 2 , so it will not be repeated here. Please note that NMOSFET and PMOSFET can also be replaced by other types of transistors.

图3绘示了图2所示的倍频器的电流以及各信号间关系的示意图,请交互参照图2和图3以了解图2所示的倍频器的作动方式。第一路径101的第一NMOSFETN1的控制端TCN1以及第一PMOSFET P1的控制端TCP1分别接收输入信号Vin+以及反相输入信号Vin-。因此第一路径101会在输入信号Vin+为高电平且反相输入信号Vin-为低电平时导通(图3中的周期T1以及T3)。第二路径103的第二NMOSFET N2的控制端TCN2以及第二PMOSFET P2的控制端TCP2分别接收反相输入信号Vin-以及输入信号Vin+。因此第二路径103会在输入信号Vin+为低电平且反相输入信号Vin-为高电平时导通(图3中的周期T2以及T4)。第一路径101导通时,因为第一阻抗模块105以及第二阻抗模块107有电感L1和L2的存在,因此会共振出如图3所示的第一输出信号Vo1和第二输出信号Vo2。同样的,第二路径103导通时,因为第一阻抗模块105以及第二阻抗模块107有电感L1和L2的存在,因此会共振出如第3图所示的第三输出信号Vo3和第四输出信号Vo4。藉由前述的动作,会在第一输出端T1产生第一合成信号Tc1,而在第二输出端T2产生第二合成信号Tc2。其中第一合成信号Tc1为第一输出信号Vo1和第三输出信号Vo3合成而成,而第二合成信号Tc2为第二输出信号Vo2和第四输出信号Vo4合成而成。FIG. 3 is a schematic diagram illustrating the current of the frequency multiplier shown in FIG. 2 and the relationship among various signals. Please refer to FIG. 2 and FIG. 3 cross-referenced to understand the operation mode of the frequency multiplier shown in FIG. 2 . The control terminal T CN1 of the first NMOSFET N 1 and the control terminal T CP1 of the first PMOSFET P 1 of the first path 101 respectively receive the input signal V in+ and the inverting input signal V in− . Therefore, the first path 101 is turned on when the input signal V in+ is at a high level and the inverted input signal V in− is at a low level (periods T 1 and T 3 in FIG. 3 ). The control terminal T CN2 of the second NMOSFET N 2 and the control terminal T CP2 of the second PMOSFET P 2 of the second path 103 respectively receive the inverting input signal V in− and the input signal V in+ . Therefore, the second path 103 is turned on when the input signal V in+ is at a low level and the inverted input signal V in− is at a high level (periods T 2 and T 4 in FIG. 3 ). When the first path 101 is turned on, because the first impedance module 105 and the second impedance module 107 have inductances L1 and L2, the first output signal V o1 and the second output signal V o1 as shown in Figure 3 will resonate Signal V o2 . Similarly, when the second path 103 is turned on, because the first impedance module 105 and the second impedance module 107 have inductances L1 and L2, the third output signal V o3 as shown in FIG. 3 will resonate and the fourth output signal V o4 . Through the aforementioned actions, the first composite signal T c1 is generated at the first output terminal T 1 , and the second composite signal T c2 is generated at the second output terminal T 2 . The first composite signal T c1 is synthesized by the first output signal V o1 and the third output signal V o3 , and the second composite signal T c2 is synthesized by the second output signal V o2 and the fourth output signal V o4 .

在此实施例中,由于第一合成信号Tc1和第二合成信号Tc2是根据输入信号Vin+和反相输入信号Vin-共振而出,因此第一合成信号Tc1和第二合成信号Tc2的频率和输入信号Vin+和反相输入信号Vin-的频率会是倍数关系。于此例中,第一合成信号Tc1和第二合成信号Tc2的频率为输入信号Vin+和反相输入信号Vin-频率的两倍,但并不限定。藉由调整第一阻抗模块105以及第二阻抗模块107中的电感值或电容值,可调整两频率间的关系。也就是说第一合成信号Tc1和第二合成信号Tc2的频率为输入信号Vin+和反相输入信号Vin-频率的N倍,而N可为正有理数。In this embodiment, since the first composite signal T c1 and the second composite signal T c2 are generated according to the resonance of the input signal V in+ and the inverted input signal V in- , the first composite signal T c1 and the second composite signal The frequency of T c2 and the frequencies of the input signal V in+ and the inverting input signal V in− will have a multiple relationship. In this example, the frequency of the first composite signal T c1 and the second composite signal T c2 is twice the frequency of the input signal V in+ and the inverted input signal V in− , but it is not limited thereto. By adjusting the inductance or capacitance in the first impedance module 105 and the second impedance module 107, the relationship between the two frequencies can be adjusted. That is to say, the frequency of the first composite signal T c1 and the second composite signal T c2 is N times the frequency of the input signal V in+ and the inverted input signal V in− , and N can be a positive rational number.

图4至图6绘示了图1所示的倍频器的详细电路的其他例子。在图4中,倍频器400还包含电容C1和C2。电容C1的一端耦接于第一NMOSFET N1的第二端T2N1,另一端耦接地电位。电容C2的一端耦接于第二NMOSFET N2的第二端T2N2,另一端耦接地电位。藉由这样的结构,可以减少杂讯并使电流更稳定。请再参照图2,在图2中,第一NMOSFET N1以及第二NMOSFET N2的第二端T2N1、T2N2不互相耦接,且第一PMOSFET P1以及第二PMOSFET P2的第二端T2P1、T2P2不互相耦接。然而,在图5的实施例中,倍频器500的第一NMOSFET N1以及第二NMOSFET N2的第二端T2N1、T2N2和第一PMOSFET P1以及第二PMOSFET P2的第二端T2P1、T2P2耦接在同一连接点Tc上。藉由图5的结构,可让电路设计上较为容易。而在图6的实施例中,倍频器600还包含了一电容C,其一端耦接连接点Tc而另一端耦接地电位。藉由这样的结构,可以减少杂讯并使电流更稳定。4 to 6 illustrate other examples of detailed circuits of the frequency multiplier shown in FIG. 1 . In FIG. 4 , the frequency multiplier 400 also includes capacitors C 1 and C 2 . One end of the capacitor C 1 is coupled to the second end T 2N1 of the first NMOSFET N 1 , and the other end is coupled to the ground potential. One end of the capacitor C 2 is coupled to the second end T 2N2 of the second NMOSFET N 2 , and the other end is coupled to the ground potential. With such a structure, noise can be reduced and the current can be more stable. Please refer to FIG. 2 again. In FIG. 2, the second terminals T 2N1 and T 2N2 of the first NMOSFET N 1 and the second NMOSFET N 2 are not coupled to each other, and the first PMOSFET P 1 and the second terminals of the second PMOSFET P 2 The two terminals T 2P1 and T 2P2 are not coupled to each other. However, in the embodiment of FIG. 5 , the second terminals T 2N1 and T 2N2 of the first NMOSFET N 1 and the second NMOSFET N 2 of the frequency multiplier 500 and the second terminals of the first PMOSFET P 1 and the second PMOSFET P 2 Terminals T 2P1 , T 2P2 are coupled to the same connection point T c . With the structure of FIG. 5 , the circuit design can be made easier. In the embodiment of FIG. 6 , the frequency multiplier 600 further includes a capacitor C, one end of which is coupled to the connection point Tc and the other end is coupled to the ground potential. With such a structure, noise can be reduced and the current can be more stable.

根据前述的实施例,可得到一信号倍频方法,如图7所示,其包含了下列步骤:According to the foregoing embodiments, a signal frequency multiplication method can be obtained, as shown in FIG. 7 , which includes the following steps:

步骤701Step 701

以第一路径101以及第二路径103分别接收一输入信号Vin+以及一反相输入信号Vin-。反相输入信号Vin-的相位和输入信号Vin+反相,第一路径101以及第二路径103由输入信号Vin+以及反相输入信号Vin-决定导通或不导通。An input signal Vin+ and an inverted input signal Vin− are respectively received through the first path 101 and the second path 103 . The phase of the inverted input signal Vin- is inverted from that of the input signal Vin+, and the first path 101 and the second path 103 are turned on or off depending on the input signal Vin+ and the inverted input signal Vin-.

步骤703Step 703

使一第一电流I1在第一路径101导通时自第一阻抗模块105流出并流经第一路径101以流入该第二阻抗模块107,以使第一阻抗模块105在第一输出端To1产生一第一输出信号Vo1且使第二阻抗模块107在第二输出端To2产生一第二输出信号Vo2Make a first current I 1 flow out from the first impedance module 105 and flow through the first path 101 to flow into the second impedance module 107 when the first path 101 is turned on, so that the first impedance module 105 is at the first output terminal T o1 generates a first output signal Vo1 and enables the second impedance module 107 to generate a second output signal V o2 at the second output terminal T o2 .

步骤705Step 705

使一第二电流I2在第二路径103导通时自第一阻抗模块105流出并流经第二路径103以流入该第二阻抗模块107,以使第一阻抗模块105在第一输出端To1产生一第三输出信号Vo3且使第二阻抗模块107在第二输出端To2产生一第四输出信号Vo4Make a second current I 2 flow out from the first impedance module 105 and flow through the second path 103 to flow into the second impedance module 107 when the second path 103 is turned on, so that the first impedance module 105 is at the first output terminal T o1 generates a third output signal V o3 and enables the second impedance module 107 to generate a fourth output signal V o4 at the second output terminal T o2 .

步骤707Step 707

以第一输出信号Vo1以及第三输出信号Vo3合成出一第一合成信号Vc1A first composite signal V c1 is synthesized with the first output signal V o1 and the third output signal V o3 .

步骤709Step 709

以第二输出信号Vo2以及第四输出信号Vo4合成出一第二合成信号Vc2A second composite signal V c2 is synthesized by the second output signal V o2 and the fourth output signal V o4 .

其中第一路径101与第二路径103不同时导通,且第一合成信号Vc1以及第二合成信号Vc2的频率为该输入信号频率的N倍,其中N为一正有理数。The first path 101 and the second path 103 are not turned on at the same time, and the frequencies of the first composite signal V c1 and the second composite signal V c2 are N times the frequency of the input signal, where N is a positive rational number.

前述的第一合成信号Vc1以及第二合成信号Vc2可组成一差动信号,但亦可视为两单独的信号。因此,前述倍频器可视为产生差动信号的倍频器,但亦可视为产生两单独信号的倍频器。The aforementioned first composite signal V c1 and second composite signal V c2 can form a differential signal, but can also be regarded as two separate signals. Therefore, the aforementioned frequency multiplier can be regarded as a frequency multiplier generating a differential signal, but it can also be regarded as a frequency multiplier generating two separate signals.

藉由前述的实施例,可以在不须额外电路的情况下,产生倍频后的差动信号,可降低电能消耗并减少电路面积。By means of the aforementioned embodiments, the frequency-multiplied differential signal can be generated without additional circuits, which can reduce power consumption and circuit area.

以上所述仅为本发明较佳实施例,凡依本发明申请专利范围所做的均等变化与修饰,皆应属本发明的涵盖范围。The above descriptions are only preferred embodiments of the present invention, and all equivalent changes and modifications made according to the scope of the patent application of the present invention shall fall within the scope of the present invention.

Claims (7)

1. a doubler, comprises:
One first outfan;
One second outfan;
One first impedance module, its one end couples one first predetermined potential, and the other end is coupled to this first outfan;
One second impedance module, its one end couples one second predetermined potential, and the other end is coupled to this second outfan;
One first path, is coupled between this first outfan and this second outfan;And
One second path, is coupled between this first outfan and this second outfan;
Wherein this first path and this second path receive an input signal and a rp input signal respectively, and this is anti-phase defeated Entering the phase place of signal and this input signal is anti-phase, this first path and this second path are by this input signal and this is anti-phase defeated Enter signal deciding conducting or be not turned on;When this first path turns on, one first electric current flows out from this first impedance module and flows Through this first path to flow into this second impedance module, thereby this first impedance module is defeated in the generation one first of this first outfan Go out signal and this second impedance module and produce one second output signal at this second outfan;When this second path turns on, one Second electric current flows out and flows through this second path and flows into this second impedance module from this first impedance module, thereby this first resistance Anti-module produces one the 3rd output signal and this second impedance module at this first outfan and produces one the at this second outfan Four output signals;
Wherein this first path does not simultaneously turns on this second path, and this first output signal synthesizes with the 3rd output signal The one second synthesis letter that the frequency of one first composite signal gone out and the second output signal synthesize with the 4th output signal Number N times of the frequency that frequency is this input signal, wherein N is a positive rational number;
Described doubler also comprises:
One first electric capacity, one end is coupled to this first path, and the other end couples an earth potential;And
One second electric capacity, one end is coupled to this second path, and the other end couples an earth potential;
Or described doubler also comprises:
One electric capacity, one end is coupled to this first path and this second path, and the other end is coupled to an earth potential.
2. doubler as claimed in claim 1, it is characterised in that this first path comprises:
One first kind one transistor, has one first end coupling this first outfan, and has one second end and reception One control end of this input signal;And
One first kind two-transistor, has one first end of this second end coupling this first kind one transistor, couples this One second end of the second outfan, and receive a control end of this rp input signal;
Wherein this second path comprises:
One Second Type one transistor, has one first end coupling this first outfan, and has one second end and reception One control end of this rp input signal;And
One Second Type two-transistor, has one first end of this second end coupling this Second Type one transistor, couples this One second end of the second outfan, and receive a control end of this input signal.
3. doubler as claimed in claim 2, it is characterised in that this second end of this first kind one transistor and should This second end of Second Type one transistor is not coupled against each other, and this first end of this first kind two-transistor and this second This first end of type two-transistor is not coupled against each other.
4. doubler as claimed in claim 3, it is characterised in that
This first electric capacity, one end is coupled to this second end of this first kind one transistor, and the other end couples an earth potential;And
This second electric capacity, one end is coupled to this second end of this Second Type one transistor, and the other end couples an earth potential.
5. doubler as claimed in claim 2, it is characterised in that this second end of this first kind one transistor, this is second years old This second end of type one transistor, this first end of this first kind two-transistor, and this Second Type two-transistor This first end is coupled to same junction point.
6. doubler as claimed in claim 5, it is characterised in that:
This electric capacity, one end is coupled to this junction point, and the other end is coupled to an earth potential.
7. doubler as claimed in claim 1, it is characterised in that this first impedance module comprises at least one inductance element, uses With this first output signal or the 3rd output signal of resonating out, this second impedance module comprises at least one inductance element, in order to Resonate out this second output signal or the 4th output signal.
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US9906209B2 (en) * 2016-05-27 2018-02-27 Mediatek Inc. Biased impedance circuit, impedance adjustment circuit, and associated signal generator

Citations (2)

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US6825722B2 (en) * 2002-03-29 2004-11-30 Kawasaki Microelectronics, Inc. Mixer and differential amplifier having bandpass frequency selectivity
US7109793B2 (en) * 2003-05-22 2006-09-19 Matsushita Electric Industrial Co., Ltd. High frequency differential circuit, differential amplifier, differential mixer, differential oscillator, and radio circuit using same

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US7962114B2 (en) * 2007-01-12 2011-06-14 International Business Machines Corporation Drain-pumped sub-harmonic mixer for millimeter wave applications

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US6825722B2 (en) * 2002-03-29 2004-11-30 Kawasaki Microelectronics, Inc. Mixer and differential amplifier having bandpass frequency selectivity
US7109793B2 (en) * 2003-05-22 2006-09-19 Matsushita Electric Industrial Co., Ltd. High frequency differential circuit, differential amplifier, differential mixer, differential oscillator, and radio circuit using same

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