CN103972047B - Chain type through-hole structure sample treatment and failure measuring method - Google Patents
Chain type through-hole structure sample treatment and failure measuring method Download PDFInfo
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- CN103972047B CN103972047B CN201410163436.2A CN201410163436A CN103972047B CN 103972047 B CN103972047 B CN 103972047B CN 201410163436 A CN201410163436 A CN 201410163436A CN 103972047 B CN103972047 B CN 103972047B
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- 238000000034 method Methods 0.000 title claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 100
- 239000002184 metal Substances 0.000 claims abstract description 100
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 83
- 229910052802 copper Inorganic materials 0.000 claims abstract description 83
- 239000010949 copper Substances 0.000 claims abstract description 83
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 46
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 46
- 238000012360 testing method Methods 0.000 claims abstract description 35
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 22
- 238000001039 wet etching Methods 0.000 claims abstract description 15
- 238000005516 engineering process Methods 0.000 claims abstract description 14
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 12
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 6
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 6
- 229910000906 Bronze Inorganic materials 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 239000010974 bronze Substances 0.000 claims description 5
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 9
- 230000008569 process Effects 0.000 description 5
- 238000000227 grinding Methods 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- PCHJSUWPFVWCPO-AKLPVKDBSA-N gold-200 Chemical compound [200Au] PCHJSUWPFVWCPO-AKLPVKDBSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- CIYRLONPFMPRLH-UHFFFAOYSA-N copper tantalum Chemical compound [Cu].[Ta] CIYRLONPFMPRLH-UHFFFAOYSA-N 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The present invention provides a kind of chain type through-hole structure sample treatment and failure measuring method, including: a chain type through-hole structure initial sample is provided, described chain type through-hole structure initial sample includes the second copper metal layer, tantalum layer, the copper connector being formed in through hole and being positioned on described tantalum layer；Described chain type through-hole structure initial sample is ground, until exposing described second copper metal layer；Use wet-etching technology to remove described second copper metal layer and described copper connector, form chain type through-hole structure test sample.The present invention uses wet-etching technology to remove the copper in the second copper metal layer and copper connector, leave tantalum layer, avoid the short circuit phenomenon of metallic copper, again because tantalum layer meets containing metal tantalum the use requirement of focused ion beam microscope, thus chain type through-hole structure invalid position is positioned.
Description
Technical field
The present invention relates to technical field of semiconductor preparation, particularly to a kind of chain type through-hole structure sample treatment side
Method and failure measuring method.
Background technology
After semiconductor chip manufacture process generally using chain type through hole (Via Chain) test structure monitor
Technological problems in road metal interconnection layer, also can use identical structure with to through hole during reliability testing
And rear road metal wire carries out related reliability assessment test.When chain type through hole lost efficacy, particularly in overall electrical resistance
During test result even open circuit (Open) bigger than normal, it is to be appreciated that failure mode could effectively solve problem,
Want to determine that failure mode must first find invalid position, carry out failure analysis the most again.
Fig. 1 is that chain type through hole tests structural profile schematic diagram, as it is shown in figure 1, chain type through hole test structure bag
Include: the first groove of being formed in dielectric layer 150, through hole and the second groove connected with through hole, formed
The first metal layer 100 in described first groove, is formed at described through hole and the tantalum layer of the second trenched side-wall
140, it is formed in described through hole and is positioned at the connector 110 on described tantalum layer 140, being formed at described second ditch
In groove and the second metal level 120 of being positioned on tantalum layer 140, described connector about 110 two ends are respectively with described
Two metal levels 120 are connected with the first metal layer 100, thus form chain type through-hole structure.Described chain type is led to
Pore structure also includes the metal pad 130 electrically connected with described second metal level 120 and the first metal layer 100,
By described metal pad 130 ground connection to test.Wherein, described connector 110, the first metal layer 100
Being same metal with the second metal level 120, described connector 110 and the second metal level 120 are by a step
Electroplating technology fills groove and through hole is formed, and described tantalum layer 140 includes metal tantalum.
During conventional failure analysis, need first to process test sample, the most first by sample de-layer (De-l20yer),
Grinding until exposing the second metal level 120, then the metal pad 130 of this structure one end being carried out at ground connection
Reason, re-uses focused ion beam microscope (FIB) and carries out voltage contrast (Voltage Contrast, abbreviation
VC) test.
Fig. 2 is to use focused ion beam microscope to carry out the chain type through hole of voltage contrast's test in prior art
The invalid position location schematic diagram of structure, as in figure 2 it is shown, when the ion beam of focused ion beam microscope is got to
During the second metal level 120, straight by the ion of accumulation on the second metal level 120 of metal pad 130 ground connection
Connect and lead away, focused ion beam microscope is shown as white, due to certain through hole and the first metal layer 100
Open circuit, causes the ion on the metal level of back segment to be led away, and accumulation on the metal layer, is revealed as black
Look, such invalid position determines that at black and white intersection, as shown in Fig. 2 dotted line frame, carries out invalid position
Mark, in order to finally carry out physical property inefficacy and resolve checking.
In real work, aluminum manufacturing procedure chain type through hole uses the method test and comparison convenient, but ties for process for copper
The chain type through hole of structure, particularly device technology size are to below 90nm, due to the copper in the second metal level 120
Spacing between metal wire is the least relative to the distance between the aluminum metal lines of aluminum manufacturing procedure technique, uses Ginding process to go
Layer, when being ground to the second metal level 120, due to the ductility of copper, grinds the copper particle produced and often makes
Become adjacent metal short-circuit between conductors, the most a sheet of metal line bridging, carry out when using focused ion beam microscope
Voltage contrast tests, and ion beam gets to the second metal level 120, owing to the second metal level 120 short circuit causes electricity
Pressure contrast point without exception, namely shows all white under focused ion beam microscope, can not find black
White intersection, thus invalid position cannot be determined.
For solving this problem, need to find the sample treatment of a kind of chain type through-hole structure inefficacy location,
Copper metal line short circuit will not occur, by using focused ion bundle to show after making chain type through-hole structure sample treatment
Micro mirror carries out voltage contrast to be tested and effectively positions invalid position.
Summary of the invention
The metal line bridging that causes after it is an object of the invention to solve to be ground to the second metal level and cannot use
Focused ion beam microscope carries out voltage contrast's test, and then the problem that can not position invalid position.
For solving above-mentioned technical problem, the present invention provides a kind of chain type through-hole structure sample treatment, including:
A chain type through-hole structure initial sample, described chain type through-hole structure initial sample is provided to include being formed at dielectric layer
In the first groove, the second groove and through hole, be formed at the first copper metal layer in described first groove,
It is formed at described through hole and the tantalum layer of the second trenched side-wall, is formed in described through hole and is positioned at described tantalum layer
On copper connector, the second copper metal layer being formed in described second groove and being positioned on tantalum layer, described copper insert
Plug is connected with described second copper metal layer and the first copper metal layer；
Described chain type through-hole structure initial sample is ground, until exposing described second copper metal layer；
Use wet-etching technology to remove described second copper metal layer and described copper connector, form chain type through hole knot
Structure test sample.
Optionally, in chain type through-hole structure sample treatment, the solution that described wet-etching technology uses
Mixed liquor for ammoniacal liquor Yu hydrogen peroxide.
Optionally, in chain type through-hole structure sample treatment, described ammoniacal liquor and the volume ratio of hydrogen peroxide
For 1:1～1:1.2.
Optionally, in chain type through-hole structure sample treatment, the solution that described wet-etching technology uses
For nitric acid.
Optionally, in chain type through-hole structure sample treatment, the concentration of described nitric acid is 60～80%.
Optionally, in chain type through-hole structure sample treatment, described chain type through-hole structure initial sample is also wrapped
Including and be formed at described through hole and the tantalum nitride layer of the second trenched side-wall, described tantalum layer is covered in described tantalum nitride
Layer.
Optionally, in chain type through-hole structure sample treatment, described chain type through-hole structure initial sample is also wrapped
Include the metal pad electrically connected with described second copper metal layer and described first copper metal layer.
According to the another side of invention, additionally provide a kind of chain type through-hole structure failure measuring method, use and focus on
Ion cluster microscope carries out voltage contrast's survey to the chain type through-hole structure test sample described in above-mentioned any one
Examination, to determine the invalid position of described chain type through-hole structure test sample.
Optionally, in chain type through-hole structure failure measuring method, by described chain type through-hole structure test sample
A metal pad ground connection, then use focused ion beam microscope carry out voltage contrast's test.
Compared with prior art, the present invention uses wet-etching technology to remove in the second copper metal layer and through hole
Copper connector, leaves tantalum layer, it is to avoid the short circuit phenomenon of metallic copper, again because meeting containing metal tantalum in tantalum layer
The use requirement of focused ion beam microscope, thus chain type through-hole structure invalid position is positioned.
Accompanying drawing explanation
Fig. 1 is that chain type through hole tests structural profile structural representation；
Fig. 2 is to use focused ion beam microscope to carry out the chain type through hole of voltage contrast's test in prior art
The invalid position location schematic diagram of structure；
Fig. 3 is the structural representation of the chain type through-hole structure sample of one embodiment of the invention；
Fig. 4 is the structural representation after the chain type through-hole structure sample grinding of one embodiment of the invention；
Fig. 5 is the structural representation after the chain type through-hole structure sample wet etching of one embodiment of the invention；
Fig. 6 is the schematic flow sheet of the chain type through-hole structure sample treatment of one embodiment of the invention.
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.According to following explanation and
Claims, advantages and features of the invention will be apparent from.It should be noted that, accompanying drawing all uses the simplest
The form changed and all use non-ratio accurately, only in order to convenient, aid in illustrating the embodiment of the present invention lucidly
Purpose.
As Fig. 2 is to shown in 6, and the present invention provides a kind of chain type through-hole structure sample treatment, including:
Step S1, it is provided that a chain type through-hole structure initial sample 20, described chain type through-hole structure initial sample 20
Including the first groove being formed in dielectric layer, the second groove and through hole, it is formed in described first groove
The first copper metal layer 200, be formed at the tantalum layer 240 of described through hole and the second trenched side-wall, be formed at institute
State in through hole and be positioned at the copper connector 210 on described tantalum layer 240, be formed in described second groove and be positioned at institute
State the second copper metal layer 220 on tantalum layer 240, described copper connector 210 and described second copper metal layer 220 and
First copper metal layer 210 connects；
Step S2, is ground described chain type through-hole structure initial sample 20, until exposing described second bronze medal
Metal level 220；
Step S3, uses wet-etching technology to remove described second copper metal layer 220 and described copper connector 210,
Form chain type through-hole structure test sample 20 '.
The present invention uses wet-etching technology to remove described second copper metal layer 220 and described copper connector 210, stays
Lower tantalum layer 240, it is to avoid the short circuit phenomenon of metallic copper, again because meeting containing metal tantalum in tantalum layer 240 and focusing on
The use requirement of ion cluster microscope, thus chain type through-hole structure invalid position is positioned.
The chain type through-hole structure sample treatment of the present invention is described in detail below in conjunction with Fig. 3 to Fig. 6.
First, step S1 is performed, it is provided that a chain type through-hole structure initial sample 20.
As it is shown on figure 3, described chain type through-hole structure initial sample 20, including: it is formed at a dielectric layer 250
In the first groove, the second groove and through hole, the first copper metal layer 200 being formed in described first groove,
It is formed at the tantalum layer 240 of described through hole and the second trenched side-wall, is formed in described through hole and is positioned at described tantalum
Copper connector 210 on layer 240, is formed in described second groove and is positioned at the second bronze medal on described tantalum layer 240
Metal level 220, described copper connector about 210 two ends respectively with described second copper metal layer 220 and described first
Copper metal layer 200 is connected, thus forms chain type through-hole structure.Described chain type through-hole structure also includes and institute
State the second copper metal layer 220 and the metal pad 230 of described first copper metal layer 200 electrical connection, by described
Metal pad 230 ground connection is to test.Wherein, described dielectric layer 250 is formed on a substrate, described
Could be formed with various device architecture in substrate, the present invention is not related to the improvement of this part, therefore the most superfluous
State.Described copper connector the 210, first copper metal layer 200 and the second copper metal layer 220 are copper metal layer, institute
State copper connector 210 and the second copper metal layer 220 and fill groove and through hole formation by a step copper electroplating technology,
Described tantalum layer 240 includes metal tantalum, and it can be formed by physical vapour deposition (PVD) mode.At other of the present invention
In embodiment, described chain type through-hole structure initial sample also includes being formed at described through hole and the second channel side
The tantalum nitride layer (not shown) of wall, described tantalum layer is covered in described tantalum nitride layer.
Then, perform step S2, described chain type through-hole structure sample is ground, until exposing described
The surface of the second copper metal layer 220.Due to the intermetallic gap ratio of copper in described second copper metal layer 220
Less, use Ginding process de-layer, when being ground to described second copper metal layer 220, due to the extension of copper
Property, grinding the copper particle produced and often cause short circuit between adjacent copper metal, the most a sheet of copper metal is short
Road, causes using focused ion beam microscope to carry out voltage contrast when testing, and scanning ion is all led away,
It is shown as white under microscope, can not find abnormity point, thus not can determine that the invalid position of chain type through-hole structure.
To this end, it follows that perform step S3, use wet etching technique to remove described second copper metal layer 220
With copper connector 210, thus form chain type through-hole structure inefficacy localizing sample 20 '.
As it is shown in figure 5, then, use acid solution wet etching metallic copper, leave tantalum layer 240, due to described the
Two copper metal layers 220 layers are once to have electroplated with the metallic copper in through hole, so, go the most in the lump during removal
Remove, and the metal in described second copper metal layer 220 cause due to grinding short circuit metallic copper the most in the lump by
Etch away.Described wet-etching technology uses and can etch metallic copper, but the selectivity not etching metal tantalum is carved
Erosion liquid.The mixed liquor that solution is ammoniacal liquor and hydrogen peroxide that the present invention uses, described ammoniacal liquor and hydrogen peroxide
Volume ratio be 1:1～1:1.2, etching object is metallic copper.Wet etching work in another embodiment of the present invention
The solution that skill uses is nitric acid, and the concentration of described nitric acid is 60～80%.Because containing metal tantalum in tantalum layer 240,
When using focused ion beam microscope to irradiate, ion can be led away by metal tantalum, thus realizes chain type
Through-hole structure invalid position positions.
The present invention also provides for a kind of chain type through-hole structure failure measuring method, uses focused ion beam microscope pair
Chain type through-hole structure test sample 20 ' as above carries out voltage contrast's test, to determine that described chain type is led to
The invalid position of pore structure test sample 20 '.First, by the one of described chain type through-hole structure test sample 20 '
End metal pad 230 ground connection, then uses focused ion beam microscope to be scanned.Due to described tantalum layer 240
In containing metal tantalum, whole chain type through hole or a current path structure, when ion-beam scanning is to described tantalum
During layer 240, on the tantalum layer 240 being connected with the metal pad 230 of earth terminal, the ion of accumulation is directly led away,
White it is shown as in focused ion beam microscope, owing to certain through hole and the first copper metal layer 200 disconnect,
Cause the ion on the tantalum layer 240 of back segment to be led away, be accumulated on described tantalum layer 240, be revealed as black
Look, such invalid position determines that at black and white intersection, as shown in the empty wire frame positions in Fig. 5, to inefficacy
Position is labeled, in order to the problem that finally there is described via bottoms or described first bronze medal layer gold 200 is entered
Row lost efficacy and resolved.
In sum, the present invention uses wet-etching technology to remove the copper in the second copper metal layer 220 and through hole
Connector, leaves tantalum layer 240, it is to avoid grind the second copper metal layer 220 metal line bridging problem caused.Again because of
For tantalum layer 240 meets the use requirement of focused ion beam microscope containing metal tantalum, thus to chain type through hole
Structure carries out voltage contrast and tests calmly, positions invalid position, finds the first bronze medal eventually through follow-up analysis
The physical imperfection that layer gold 200 exists.
Foregoing description is only the description to present pre-ferred embodiments, not any limit to the scope of the invention
Fixed, any change that the those of ordinary skill in field of the present invention does according to the disclosure above content, modification, all belong to
Protection domain in claims.
Claims (9)
1. a chain type through-hole structure sample treatment, it is characterised in that including:
A chain type through-hole structure initial sample, described chain type through-hole structure initial sample is provided to include being formed at one
The first groove, the second groove and through hole in dielectric layer, the first bronze medal gold being formed in described first groove
Belong to layer, be formed at described through hole and the tantalum layer of the second trenched side-wall, be formed in described through hole and be positioned at institute
State the copper connector on tantalum layer, the second copper metal layer being formed in described second groove and being positioned on tantalum layer, institute
State copper connector to be connected with described second copper metal layer and the first copper metal layer；
Described chain type through-hole structure initial sample is ground, until exposing described second copper metal layer；
Use wet-etching technology to remove described second copper metal layer and described copper connector, form chain type through hole knot
Structure test sample.
2. chain type through-hole structure sample treatment as claimed in claim 1, it is characterised in that described wet
The mixed liquor that solution is ammoniacal liquor and hydrogen peroxide that method etching technics uses.
3. chain type through-hole structure sample treatment as claimed in claim 2, it is characterised in that described ammonia
Water is 1:1～1:1.2 with the volume ratio of hydrogen peroxide.
4. chain type through-hole structure sample treatment as claimed in claim 1, it is characterised in that described wet
The solution that method etching technics uses is nitric acid.
5. chain type through-hole structure sample treatment as claimed in claim 4, it is characterised in that described nitre
The concentration of acid is 60～80%.
6. chain type through-hole structure sample treatment as claimed in claim 1, it is characterised in that described chain
Formula through-hole structure initial sample also includes being formed at described through hole and the tantalum nitride layer of the second trenched side-wall, institute
State tantalum layer and be covered in described tantalum nitride layer.
7. chain type through-hole structure sample treatment as claimed in claim 1, it is characterised in that described chain
Formula through-hole structure initial sample also includes electrically connecting with described second copper metal layer and described first copper metal layer
Metal pad.
8. a chain type through-hole structure failure measuring method, it is characterised in that use focused ion beam microscope
Chain type through-hole structure test sample as claimed in any of claims 1 to 7 in one of claims is carried out voltage contrast
Test, to determine the invalid position of described chain type through-hole structure test sample.
9. chain type through-hole structure failure measuring method as claimed in claim 8, it is characterised in that by described
One metal pad ground connection of chain type through-hole structure test sample, then uses focused ion beam microscope to carry out electricity
Pressure contrast test.
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| CN104319245A (en) * | 2014-09-19 | 2015-01-28 | 上海华虹宏力半导体制造有限公司 | Method for detecting potential of node inside chip |
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| US6498384B1 (en) * | 2000-12-05 | 2002-12-24 | Advanced Micro Devices, Inc. | Structure and method of semiconductor via testing |
| CN1855417A (en) * | 2005-04-20 | 2006-11-01 | 上海集成电路研发中心有限公司 | Use of copper Dimashg process in production of integrated circuits |
| US7671362B2 (en) * | 2007-12-10 | 2010-03-02 | International Business Machines Corporation | Test structure for determining optimal seed and liner layer thicknesses for dual damascene processing |
| CN102623367A (en) * | 2012-03-14 | 2012-08-01 | 上海华力微电子有限公司 | Process for testing later-stage reliability of nondestructive copper |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100555504B1 (en) * | 2003-06-27 | 2006-03-03 | 삼성전자주식회사 | Test structure of semiconductor device capable of detecting defect size and test method using the same |
| US7098054B2 (en) * | 2004-02-20 | 2006-08-29 | International Business Machines Corporation | Method and structure for determining thermal cycle reliability |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6498384B1 (en) * | 2000-12-05 | 2002-12-24 | Advanced Micro Devices, Inc. | Structure and method of semiconductor via testing |
| CN1855417A (en) * | 2005-04-20 | 2006-11-01 | 上海集成电路研发中心有限公司 | Use of copper Dimashg process in production of integrated circuits |
| US7671362B2 (en) * | 2007-12-10 | 2010-03-02 | International Business Machines Corporation | Test structure for determining optimal seed and liner layer thicknesses for dual damascene processing |
| CN102623367A (en) * | 2012-03-14 | 2012-08-01 | 上海华力微电子有限公司 | Process for testing later-stage reliability of nondestructive copper |
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