CN103990604B - A kind of screening technique of chip solid electrolyte matter tantalum capacitor - Google Patents
A kind of screening technique of chip solid electrolyte matter tantalum capacitor Download PDFInfo
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- CN103990604B CN103990604B CN201410037522.9A CN201410037522A CN103990604B CN 103990604 B CN103990604 B CN 103990604B CN 201410037522 A CN201410037522 A CN 201410037522A CN 103990604 B CN103990604 B CN 103990604B
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- solid electrolyte
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- 239000003990 capacitor Substances 0.000 title claims abstract description 78
- 239000007784 solid electrolyte Substances 0.000 title claims abstract description 27
- 229910052715 tantalum Inorganic materials 0.000 title claims abstract description 24
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims abstract description 12
- 238000012216 screening Methods 0.000 title claims abstract description 11
- 238000012360 testing method Methods 0.000 claims abstract description 42
- 239000000945 filler Substances 0.000 claims abstract description 17
- 238000007600 charging Methods 0.000 claims description 13
- 230000015556 catabolic process Effects 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 4
- 238000010277 constant-current charging Methods 0.000 claims description 3
- 238000009658 destructive testing Methods 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 claims description 3
- 238000005070 sampling Methods 0.000 claims description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 abstract description 2
- 238000011156 evaluation Methods 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
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- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The invention discloses the screening technique of a kind of chip solid electrolyte matter tantalum capacitor, it comprises the steps of (1), is connected on the outfan of digital sourcemeter by capacitor；(2), oscillograph is connected on the outfan of digital sourcemeter；(3), constant-current charge is carried out；(4), pressure filler test is carried out；(5), the capacitor after pressure filler test is carried out pressure assessment test.The invention has the beneficial effects as follows: by pressure filler test, under conditions of not damaging capacitor, the capacitor that strong, the superseded voltage endurance capability of voltage endurance capability is weak can be picked out, so that it is guaranteed that the capacitor consigning to user has best pressure performance, improve the dependability of capacitor, simultaneously by pressure evaluation test, can performance pressure to the batch of capacitor be estimated, guarantee that the bad batch of pressure performance is paid user and used, and there is test be simple and convenient to operate, facilitate feasible, the obvious feature of effect.
Description
Technical field
The present invention relates to the screening technique of a kind of chip solid electrolyte matter tantalum capacitor, belong to capacitor quality and
Reliability assessment technical field.
Background technology
Chip solid electrolyte matter tantalum capacitor because its volume is little, capacity is big, good temp characteristic, stability and can
It is widely used in all kinds of high-end electronic equipment by property advantages of higher.Although having passed through a series of filler test
And test, but still having an other capacitor to occur puncturing the phenomenon of inefficacy during actual use, it is main
Wanting reason is that the screening test methods such as traditional voltage aging, unit for electrical property parameters test can not be rejected pressure completely
The capacitor that ability is on the low side, the voltage endurance capability difference between the most difficult differentiation capacitor batch, cause the most resistance to
Capacitor or capacitor batch that pressure energy power is low occur that puncture short lost efficacy under the cumulative function of later stage stress.
Therefore, necessary exploration and propose new screening and appraisal procedure, carry out with the pressure performance to capacitor
Examination and assessment, reject pressure bad capacitor, it is ensured that its dependability.
Summary of the invention
It is an object of the invention to provide the screening technique of a kind of chip solid electrolyte matter tantalum capacitor, overcome existing
There is the deficiency of technology, the pressure performance of capacitor is screened and assessed test, it is ensured that consigns to user's
Capacitor and capacitor batch have preferably voltage endurance capability, it is ensured that the dependability of capacitor.
It is an object of the invention to be achieved through the following technical solutions: a kind of chip solid electrolyte matter tantalum electric capacity
The screening technique of device, it comprises the steps of
(1), chip solid electrolyte matter tantalum capacitor to be measured is connected on the outfan of digital sourcemeter；
(2), by oscillograph or be connected on the outfan of digital sourcemeter, with oscillograph observation and record electric capacity
Device both end voltage situation of change, makes oscillograph be in monitoring state；
(3), start digital sourcemeter and by digital sourcemeter, chip solid electrolyte matter tantalum capacitor carried out constant current
Charging；
(4), carry out pressure filler test: set a desired pressure standard value, every fill in predetermined
In the electricity time, voltage does not reaches preset value and is i.e. judged as that voltage endurance capability is not enough, is rejected；
(5), the capacitor after pressure filler test is carried out pressure assessment test: set one and guarantee to be commented
Estimate the threshold voltage that sample all can puncture, observe with oscillograph and record chip solid electrolyte Ta capacitor
Breakdown voltage is as its final pressure voltage first, and the threshold voltage of setting should exceed the pressure limit of capacitor
Value, thus obtain the pressure characteristic statistics data of chip solid electrolyte matter tantalum capacitor batch, obtain high pressure
The chip solid electrolyte matter tantalum capacitor of performance.
Described constant-current charge uses low current charge, and the setting of charging current makes chip solid electrolyte matter tantalum
It is 10s to 20s that the charging voltage of capacitor rises to the preset value charging interval, and electric current amount is less than 1mA,
To guarantee that capacitor is not by rush of current.
Described filler test is nondestructive test, is used for picking out pressure performance height, rejecting pressure performance
The capacitor of difference.
Described assessment test is sampling destructive testing.
The beneficial effects of the present invention is: by pressure filler test, under conditions of not damaging capacitor,
The capacitor that strong, the superseded voltage endurance capability of voltage endurance capability is weak can be picked out, so that it is guaranteed that consign to the electricity of user
Container has best pressure performance, improves the dependability of capacitor, simultaneously by pressure assessment examination
Test, can performance pressure to the batch of capacitor be estimated, it is ensured that the batch payment use that pressure performance is bad
Family uses, and has test and be simple and convenient to operate, facilitate feasible, the obvious feature of effect.
Accompanying drawing explanation
Fig. 1 is the principle schematic of the present invention；
Fig. 2 is the oscillogram that the pressure filler test of the present invention passes through；
Fig. 3 is the oscillogram that puncturing occurs in the pressure filler test of the present invention；
Fig. 4 is that the pressure assessment test of the present invention punctures oscillogram.
Detailed description of the invention
Example further describes technical scheme below in conjunction with the accompanying drawings, but claimed scope not office
It is limited to described.
The screening technique of a kind of chip solid electrolyte matter tantalum capacitor, it comprises the steps of
(1), such as Fig. 1, chip solid electrolyte matter tantalum capacitor to be measured is connected to the output of digital sourcemeter
On end；
(2), by oscillograph or be connected on the outfan of digital sourcemeter, with oscillograph observation and record electric capacity
Device both end voltage situation of change, makes oscillograph be in monitoring state；
(3), start digital sourcemeter and by digital sourcemeter, chip solid electrolyte matter tantalum capacitor carried out constant current
Charging, can observe that the voltage linear rule at capacitor two ends rises；
(4) pressure filler test, is carried out: measured capacitance device is CAK45 type 25V22 μ F, pressure ultimate value
It is set as that 125V, constant-current charge current value are set as 55 μ A, sets the expectation pressure voltage of capacitor as 75V,
Every within the predetermined charging interval voltage do not reach preset value and be i.e. judged as that voltage endurance capability is not enough, if electric capacity
Device occurs that in charging process power down or not up to preset voltage value enter constant current constant voltage state, shows capacitor
Pressure performance is bad, then rejected, as Fig. 2, capacitor pressure voltage not up to 50V occur that power down punctures,
Being rejected, such as Fig. 3, capacitor pressure voltage has reached 75V and has not occurred that power down punctures, and for certified products, surveys
After examination, certified products should discharge；
(5), the capacitor after pressure filler test is carried out pressure assessment test: set one and guarantee to be commented
Estimate the threshold voltage that sample all can puncture, observe with oscillograph and record chip solid electrolyte Ta capacitor
Breakdown voltage is as its final pressure voltage first, and the threshold voltage of setting should exceed the pressure limit of capacitor
Value, thus obtain the pressure characteristic statistics data of chip solid electrolyte matter tantalum capacitor batch, obtain high pressure
The chip solid electrolyte matter tantalum capacitor of performance, such as Fig. 4, capacitor occurs repeatedly puncturing, takes and hit for the first time
Wearing voltage V is its breakdown value, and assessment test sample amount can need to extract 5 to 50 according to statistical data
(or more), by only testing and record its breakdown voltage value, calculate high-breakdown-voltage, breakdown minimum electricity
The statistical values such as pressure, average voltage breakdown, breakdown voltage variance, compare performance pressure with batch for batch and comment
Estimate.
Described constant-current charge uses low current charge, and the setting of charging current makes chip solid electrolyte matter tantalum
It is 10s to 20s that the charging voltage of capacitor rises to the preset value charging interval, and electric current amount is less than 1mA,
To guarantee that capacitor is not by rush of current.
Described filler test is nondestructive test, is used for picking out pressure performance height, rejecting pressure performance
The capacitor of difference, for screening test, the threshold voltage owing to setting is not above the pressure limit of capacitor
Value, condenser voltage is in constant current constant voltage state after being charged to setting value, voltage constant no longer rises at preset value,
Show that this capacitor can tolerate default voltage levvl, if capacitor occurs power down in charging process
Or not up to preset voltage value enters constant current constant voltage state, shows that the pressure performance of capacitor is bad, should give and pick
Remove.
Described assessment test is sampling destructive testing, and for evaluation test, the threshold voltage of setting should surpass
Crossing the pressure ultimate value of capacitor, during to ensure test, all samples all puncture, to obtain electric capacity
The pressure characteristic statistics data of device batch.
Claims (1)
1. the screening technique of a chip solid electrolyte matter tantalum capacitor, it is characterised in that: comprise the steps of
(1), chip solid electrolyte matter tantalum capacitor to be measured is connected on the outfan of digital sourcemeter；
(2), oscillograph is connected on the outfan of digital sourcemeter, with oscillograph observation and record capacitor
Both end voltage situation of change, makes oscillograph be in monitoring state；
(3), start digital sourcemeter and by digital sourcemeter, chip solid electrolyte matter tantalum capacitor carried out constant current
Charging；
(4), carry out pressure filler test: set a desired pressure standard value, every fill in predetermined
In the electricity time, voltage does not reaches preset value and is i.e. judged as that voltage endurance capability is not enough, is rejected；
(5), the capacitor after pressure filler test is carried out pressure assessment test: set one and guarantee to be commented
Estimate the voltage threshold that sample all can puncture, observe with oscillograph and record chip solid electrolyte Ta capacitor
Breakdown voltage is as its final pressure voltage first, and the voltage threshold of setting should exceed the pressure ultimate value of capacitor,
Thus obtain the pressure characteristic statistics data of chip solid electrolyte matter tantalum capacitor batch, obtain high pressure performance
Chip solid electrolyte matter tantalum capacitor；
Described constant-current charge uses low current charge, and the setting of charging current makes chip solid electrolyte matter tantalum
It is 10s to 20s that the charging voltage of capacitor rises to the preset value charging interval, and electric current amount is less than 1mA,
Described pressure filler test is nondestructive test, is used for picking out pressure performance height, rejecting pressure performance
The capacitor of difference, for pressure filler test, owing to the voltage threshold set is not above the pressure of capacitor
Ultimate value, condenser voltage is in constant current constant voltage state after being charged to preset value, voltage constant is at preset value no longer
Rise, show that this capacitor can tolerate default voltage levvl, if capacitor goes out in charging process
Existing power down or not up to preset value enter constant current constant voltage state, show that the pressure performance of capacitor is bad, should give
Reject；
Described pressure assessment test is sampling destructive testing, for pressure assessment test, the voltage of setting
Threshold value should exceed the pressure ultimate value of capacitor, and during to ensure test, all samples all puncture, with
Obtain the pressure characteristic statistics data of capacitor batch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410037522.9A CN103990604B (en) | 2014-01-26 | 2014-01-26 | A kind of screening technique of chip solid electrolyte matter tantalum capacitor |
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|---|---|---|---|
| CN201410037522.9A CN103990604B (en) | 2014-01-26 | 2014-01-26 | A kind of screening technique of chip solid electrolyte matter tantalum capacitor |
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| CN103990604A CN103990604A (en) | 2014-08-20 |
| CN103990604B true CN103990604B (en) | 2016-09-14 |
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| CN201410037522.9A Active CN103990604B (en) | 2014-01-26 | 2014-01-26 | A kind of screening technique of chip solid electrolyte matter tantalum capacitor |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104624525B (en) * | 2015-02-04 | 2016-10-05 | 南京绿索电子科技有限公司 | The process flow control system of the seasoned and automatic testing, sorting of super capacitor |
| CN105457916B (en) * | 2016-01-15 | 2018-02-13 | 江门市凯骏环保科技有限公司 | A kind of electrostatic air cleaner product ozone concentration quality control method |
| CN109541371B (en) * | 2018-11-19 | 2021-02-23 | 贵州中航聚电科技有限公司 | Chip tantalum capacitor measuring tool |
| CN113058882B (en) * | 2021-03-17 | 2022-06-03 | 中国振华(集团)新云电子元器件有限责任公司(国营第四三二六厂) | Screening method of reliable chip tantalum capacitor |
| CN115178501B (en) * | 2022-07-12 | 2024-08-27 | 中国振华(集团)新云电子元器件有限责任公司(国营第四三二六厂) | Screening method of high-reliability solid electrolyte tantalum capacitor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4218649A (en) * | 1978-04-24 | 1980-08-19 | Bell Telephone Laboratories, Incorporated | High voltage leakage and breakdown test circuit |
| US5882719A (en) * | 1995-12-13 | 1999-03-16 | H. C. Starck, Inc. | Solid tantalum capacitor test |
| CN1280301A (en) * | 1999-07-09 | 2001-01-17 | 华仪电子股份有限公司 | Output open circuit detection method and device for DC withstand voltage test/insulation resistance test |
| CN1293817A (en) * | 1999-02-04 | 2001-05-02 | 松下电器产业株式会社 | Screening Method for Multilayer Ceramic Capacitors |
| CN101313380A (en) * | 2005-11-22 | 2008-11-26 | 麦斯韦尔技术股份有限公司 | Capacitor screening |
-
2014
- 2014-01-26 CN CN201410037522.9A patent/CN103990604B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4218649A (en) * | 1978-04-24 | 1980-08-19 | Bell Telephone Laboratories, Incorporated | High voltage leakage and breakdown test circuit |
| US5882719A (en) * | 1995-12-13 | 1999-03-16 | H. C. Starck, Inc. | Solid tantalum capacitor test |
| CN1293817A (en) * | 1999-02-04 | 2001-05-02 | 松下电器产业株式会社 | Screening Method for Multilayer Ceramic Capacitors |
| CN1280301A (en) * | 1999-07-09 | 2001-01-17 | 华仪电子股份有限公司 | Output open circuit detection method and device for DC withstand voltage test/insulation resistance test |
| CN101313380A (en) * | 2005-11-22 | 2008-11-26 | 麦斯韦尔技术股份有限公司 | Capacitor screening |
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| CN103990604A (en) | 2014-08-20 |
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