CN114117987B - Modeling method of global process corner model - Google Patents
Modeling method of global process corner modelInfo
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Abstract
本发明公开了一种全局工艺角模型的建模方法，包括如下步骤：步骤S1，根据设计需求进行总工艺角建模，得到多个总工艺角模型参数及其值；步骤S2，设计一种和尺寸相关的全局工艺角模型系数，将该全局工艺角模型系数与每一个总工艺角模型参数值相乘，并将相乘后的参数作为全局工艺角模型参数值；步骤S3，调整全局工艺角模型系数中的参数来拟合全局工艺角模型使得全局工艺角模型符合目标值。
The present invention discloses a modeling method of a global process angle model, comprising the following steps: step S1, performing total process angle modeling according to design requirements to obtain multiple total process angle model parameters and their values; step S2, designing a global process angle model coefficient related to size, multiplying the global process angle model coefficient with each total process angle model parameter value, and using the multiplied parameter as the global process angle model parameter value; step S3, adjusting the parameters in the global process angle model coefficient to fit the global process angle model so that the global process angle model meets the target value.
Description
Technical Field
The invention relates to the technical field of semiconductor integrated circuits, in particular to a modeling method of a global process corner model.
Background
According to classical literature, MOS device mismatch is a phenomenon that results in random fluctuations in the same MOS device physical quantity over time in some manufacturing process flows. The degree of device mismatch under a particular process determines the final design accuracy and yield of the circuit. The circuit designer needs an accurate MOSFET mismatch model to constrain the circuit optimization design, and the layout designer needs corresponding design rules to reduce the chip mismatch. Especially after the CMOS process device size goes into the deep submicron range, device mismatch becomes more serious with the size reduction, limiting the performance of the rf/analog integrated circuit. Of course, the digital circuit is not completely immune to the effects of device mismatch, and in large-scale memory designs, the effects of transistor mismatch on the sub-memory cell clock signal must be considered.
Local mismatch and global mismatch, local mismatch can be simply understood as parameter mismatch between devices in a local region, and global mismatch is mismatch caused by parameter variation (such as temperature, doping concentration) over the whole silicon wafer.
The classical method of computing the total mismatch is to sum the square of the global mismatch with the square of the local mismatch, which is equal to the square of the total mismatch. The written formula is:Wherein total represents the total process corner model value, global represents the global process corner model value, local represents the local mismatch model value, and Sigma represents the standard deviation. After modeling the overall process corner model and the local mismatch model, it is also necessary to model the global process corner model.
In practice, the local mismatch is obtained by testing data through a special test structure, the total mismatch is determined by data of a large number of wafers, and the goal of the global mismatch is calculated through this classical formula.
There are typically several methods of modeling global process corner models. One is to calculate the target that the global process corner model should do under the setting of classical square law by using the test data of the local mismatch test structure and the value of the total process corner model which is made in advance. With this goal in mind, a global process corner model is obtained by tuning global process corner model parameters using a method of tuning the global process corner model.
The method has the defects that the model adjustment process is complicated, and after the overall process angle model is adjusted, the overall process angle model is adjusted again through a similar method and flow, and the method has the advantages that the adjusted overall process angle model absolutely accords with a classical square law formula and is very accurate.
The second method is rough, called fixed coefficient method, and directly sets a number between 0 and 1 as the global process corner model coefficient, for example, sets 0.75 as the global process corner model coefficient. This approach is extremely simple but has the drawback that it is obvious that since the local mismatch varies with size, the global process corner model is also a function of size for different sizes, and it is not possible that all sizes are fixed coefficients. In this way, the global process corner model may deviate greatly from the calculated values of classical formulas on MOS devices of certain corner dimensions.
The chinese patent application with publication number CN 108133102A discloses a modeling technique of global process corner model, which uses a calculation formula of directly subtracting the parameters of the global process corner model from the parameters of the local mismatch model, i.e. Sigma total＝Sigmaglobal+Sigmalocal.
It simplifies the square law and becomes a direct simple addition relationship. Because the default total process angle model is derived from 3 standard deviations of the test data and the local mismatch model is derived from 1 standard deviation of the test data, the patent multiplies 3 in front of the local mismatch model angle parameters to match the 3 standard deviations of the total process angle model.
The formula of the patent application is very simple, so that the parameter expression of the global process angle model can be obtained directly through a simple addition formula, and the global process angle model obtained by the method also has the correct trend of changing along with the change of the size and has the correct physical meaning due to the addition of the local mismatch model parameters related to the size. However, the greatest defect of the patent application is that the obtained global process angle model has small errors with the target value of the global process angle model calculated by the classical square law in the simple addition calculation formula of the patent application, although the calculation formula has correct physical significance. The root of this error is the difference between the simple addition formula and the classical square law addition formula.
The Chinese patent application with publication No. CN 111783296A also discloses a modeling technique of global process corner model, which adopts a global mismatch formula without simplifying square law, uses several parameters selected as local mismatch model parameters, and uses square law formula with participation of the total process corner model parameters and the local mismatch model parameters, like the Chinese patent application with publication No. CN 108133102A, namely
The formulas of the patent application are not complex, so that the parameter expression of the global process angle model can be obtained through the formulas added by square law, and the global process angle model obtained by the method also has the correct trend of changing along with the change of the size and has the correct physical meaning due to the addition of the local mismatch model parameters related to the size. However, the global process corner model made by the method of the patent application sometimes has deviation, and the root of the deviation is that the global process corner model value of the corresponding electrical property model is calculated by using the square law directly by using individual parameters (such as VTH0 or U0) in the electrical property model, rather than directly calculating the square law relation of the global mismatch of the electrical property model.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention aims to provide a modeling method of a global process corner model, so as to realize the modeling method of the global process corner model which is very accurate and simple to operate.
To achieve the above and other objects, the present invention provides a modeling method of a global process corner model, comprising the steps of:
Step S1, modeling a total process angle according to design requirements to obtain a plurality of total process angle model parameters;
Step S2, designing a global process corner model coefficient related to the size, multiplying the global process corner model coefficient by each total process corner model parameter value, and taking the multiplied parameters as global process corner model parameter values;
And S3, adjusting parameters in the global process corner model coefficients to fit the global process corner model so that the global process corner model can meet the target value.
Preferably, in step S2, a global process corner model coefficient expression is designed that is related to the dimension.
Preferably, the global process corner model coefficient expression related to the dimension is as follows:
wherein global is a large-size parameter, lglobal is a short-channel parameter, wglobal is a narrow-channel parameter, pglobal is a small-size parameter, lef is an effective channel length, and wef is an effective channel width.
Preferably, when lef and wef are both large, the last three terms of the global process corner model coefficient expression are ignored, and global plays a major role in the global process corner model coefficient expression for scaling up the global process corner parameters of the device of the size in the global process corner model.
Preferably, when lef is small and wef is large, the last two terms of the global process corner model coefficient expression are ignored, and the global process corner model coefficient expression is mainly adjusted by lglobal and is used for adjusting global process corner parameters of the short-channel device in the global process corner model.
Preferably, when lef is relatively large and wef is small, the second term and the fourth term of the global process corner model coefficient expression are ignored, and the global process corner model coefficient expression is mainly adjusted by wglobal and is used for narrowing global process corner parameters of the channel device in the global process corner model.
Preferably, when lef and wef are small, the global process corner model coefficient expression is adjusted primarily by pglobal for adjusting global process corner parameters of small-sized devices in the global process corner model.
Compared with the prior art, the modeling method of the global process corner model has the advantages that the expression related to the size is used as the global process corner model coefficient, the global process corner model coefficient is multiplied by each total process corner model parameter value, the multiplied parameters are used as the global process corner model parameter values, and finally, the parameters in the global process corner model coefficient are adjusted to fit the global process corner model so that the global process corner model accords with the target value, so that the modeling method of the global process corner model which is very accurate and simple to operate is realized.
Drawings
FIG. 1 is a flow chart of the steps of a method for modeling a global process corner model according to the present invention.
Detailed Description
Other advantages and effects of the present invention will become readily apparent to those skilled in the art from the following disclosure, when considered in light of the accompanying drawings, by describing embodiments of the present invention with specific embodiments thereof. The invention may be practiced or carried out in other embodiments and details within the scope and range of equivalents of the various features and advantages of the invention.
Mobility model and threshold voltage model in BSIM4 compact model as follows:
Where μeff is the effective mobility μ0 (T, L) is the low field mobility parameter at the operating temperature T, μ0 is the low field mobility, which is an expression containing U0 and temperature T and channel length L, and U0 is the low field mobility parameter at room temperature 300K. UA and UB are gate voltage dependent parameters in the effective mobility model, UC is body bias dependent parameter in the effective mobility model, UD is coulomb scattering dependent parameter in the effective mobility model, V bseff is effective source liner voltage parameter, E eff is effective average electric field, vth is threshold voltage, TOXE is equivalent electrical gate oxide thickness parameter, and V gsteff is effective overdrive voltage parameter.
Wherein VTH0 is a threshold voltage parameter of a long channel device, K1 is a first-order body bias coefficient of a threshold voltage model, K2 is a second-order body bias coefficient of the threshold voltage model with a vertical doping non-uniformity effect, K1 ox is a first-order body bias coefficient of the threshold voltage model with a gate oxide thickness dependent, K2 ox is a second-order body bias coefficient of the threshold voltage model with a gate oxide thickness dependent vertical doping non-uniformity effect, LPE0 is an anti-short channel effect parameter caused by pocket injection of the threshold voltage, LPEB is a parameter of the threshold voltage influenced by the body bias of the anti-short channel effect caused by pocket injection,The threshold voltage model is characterized in that K3 is a narrow channel effect parameter of a threshold voltage, K3B is a parameter of the narrow channel effect of the threshold voltage influenced by a body bias voltage, V bseff is an effective source liner voltage parameter, DVT0W is a narrow channel and short channel effect parameter of the threshold voltage, DVT1W is a narrow channel and short channel effect dependent parameter of the threshold voltage, L C0 is a critical dimension of a threshold voltage drain induced barrier reduction effect, L C1 is a critical dimension of a roll-off effect of the threshold voltage, L CW is a critical dimension of the narrow channel effect of the threshold voltage, V bi is a built-in potential of a diode, DSUB is a channel length dependent parameter of the threshold voltage drain induced barrier reduction effect, ETA0 is a source drain voltage dependent parameter of the threshold voltage drain induced barrier reduction effect, ETAB is a body bias voltage dependent parameter of the threshold voltage drain induced barrier reduction effect, n is an electron concentration, K B is a Boltzmann constant, T is a temperature value of a temperature Temp, q is an electron quantity, DVTP is a channel length dependent parameter of a drain induced threshold voltage drift, KT1 is a threshold voltage model is a temperature dependent threshold voltage of the threshold voltage, and a threshold voltage model is a threshold voltage dependent temperature of the threshold voltage model is 35.
It can be seen that U0 (low field mobility parameter) and UB (gate voltage dependent parameter in the effective mobility model) are one parameter in the effective mobility μeff expression, VTH0 (long channel device threshold voltage) is one parameter in the threshold voltage VTH model expression.
Modeling method of process corner model in SPICE model in general, the total process corner model will choose some main parameters and add a variation to them to simulate the deviation of the electrical characteristics of the device from the typical situation. The long channel device threshold voltage VTH0 parameter, such as the BSIM4 model in a MOS device, is one parameter in the threshold voltage VTH expression.
For modeling of the process corner model, it is written as follows:
VTH0=‘0.5+DVTH0’
Wherein DVTH is a deviation from the typical case (0.5).
Of course, some other parameters than VTH0 are selected to perform the same operation, such as low field mobility U0.
FIG. 1 is a flow chart of the steps of a method for modeling a global process corner model according to the present invention. As shown in fig. 1, the modeling method of the global process corner model of the invention comprises the following steps:
And step S1, modeling the total process angle according to design requirements to obtain a plurality of total process angle model parameters.
In the embodiment of the invention, modeling of the Total process angle model can be performed according to design requirements by adopting an existing method in the industry, and the DVTH0 value DVTH0_total of the Total process angle model and other values of the Total process angle parameters can be obtained after the modeling of the Total process angle is completed.
Step S2, designing a global process corner model coefficient related to the size, multiplying the global process corner model coefficient by each total process corner model parameter value, and taking the multiplied parameters as global process corner model parameter values.
In a specific embodiment of the present invention, a global process corner model coefficient expression related to the size is designed, and the expression is as follows:
wherein global is a large-size parameter, lglobal is a short-channel parameter, wglobal is a narrow-channel parameter, pglobal is a small-size parameter, lef is an effective channel length in micrometers (μm), wef is an effective channel width in micrometers (μm).
When lef and wef are large (e.g., 5-10 times greater than the minimum line width), the last three terms of the expression (3) are negligible, and the large-size parameter global in the expression (3) plays a main role, and it mainly adjusts the global process corner parameters of the large-size devices in the global process corner model, or adjusts the global process corner parameters of all the devices as a whole.
When lef is small (e.g., less than 5 times the minimum line width) and wef is large (e.g., greater than 5-10 times the minimum line width), the last two terms of the expression (3) are negligible, and the expression (3) is mainly adjusted by the short-channel parameter lglobal, which mainly adjusts the global process corner parameter of the short-channel device in the global process corner model.
When lef is relatively large (e.g., 5-10 times greater than the minimum line width), wef is small (e.g., 5 times less than the minimum line width), the second and fourth terms of expression (3) are negligible, and the narrow channel parameters wglobal in expression (3) are mainly used for adjusting the global process corner parameters of the narrow channel device in the global process corner model.
When lef and wef are small (e.g., less than 5 times the minimum line width), the expression (3) is primarily tuned by the small-scale parameter pglobal, which primarily tunes the global process corner parameters of the small-scale device in the global process corner model.
Therefore, finally, only 4 parameters global, lglobal, wglobal, pglobal are required to be adjusted, so that the global process angle model parameters of the devices with large size, short channel, narrow channel and small size can be adjusted in a targeted manner, and the final global process angle model reaches or approaches to the target value.
And S3, adjusting parameters in the global process corner model coefficients to fit the global process corner model so that the global process corner model can meet the target value.
Specifically, the coefficient Gpara obtained in step S2 is multiplied by each of the total process angle parameters, such as VTH0, and the Global process angle value DVTH0_global is:
DVTH0_Global=’DVTH0_Total*Gpara’
wherein DVTH0_total is the value of DVTH0 after modeling of the Total process angle model in step S1 is completed.
Similarly, for other total process corner model parameter values, the global process corner model coefficient Gpara is multiplied, and the final product is then used as the corresponding global process corner model parameter value
Examples
The following examples of how to model the global process corner model and sub-circuit model are described by way of example:
.LIB FFG_ULVT
* (Global Process corner FFG model, FFG is Fast NMOS Fast PMOS Global meaning fast NMOS fast PMOS global Process corner)
.PARAM
* (FFG Global Process corner model parameter List and values, where the Global Process corner model parameters all take the corresponding total Process corner model parameter values)
+GL_DTOXE_NULVT12=-4.0E-11 GL_DXL_NULVT12=-2.0E-10 GL_DXW_NULVT12=1.0E-10
+GL_DCJS_NULVT12=-0.05 GL_DCJSWS_NULVT12=-0.05
...
ENDL FFG-ULVT $ (end global Process corner model)
.SUBCKT PULVT12 D G S B W＝1E-6 L＝1E-6 SA＝0 SB＝0 SD＝0 AS＝0 AD＝0PS＝0 PD＝0NRD＝0 NRS＝0 SCA＝0 SCB＝0SCC＝0 NF＝1 MULTI＝1 MISMOD＝0GLOBAL_FLAG＝0 FLAG_CPC＝1
* (Subcircuit model MOS device name and parameter declaration)
.PARAM
+LEF=‘L'
+WEF=‘W/NF’
+GL_RATIO_PULVT12_HV=‘GLOBAL+LGLOBAL/(LEF*1E6)+WGLOBAL/(WEF*1E6)+PGLOBAL/(LEF*WEF*1E12)'
* (Definition of global Process corner coefficient corresponds to Gpara)
+GLOBAL=0.997
* (Large-size global Process corner coefficient parameter values)
+LGLOBAL=0
* (Short channel global Process corner coefficient parameter values)
+WGLOBAL=0
* (Narrow channel global Process corner coefficient parameter values)
+PGLOBAL=-0.0005
* (Small-sized global Process corner coefficient parameter values)
+DTOXE_PULVT12_HV＝'TL_DTOXE_PULVT12_HV*(1-GLOBAL_FLAG)*(1-MC_FLAG)+GL_DTOXE_PULVT12_HV*GLOBAL_FLAG*GL_RATIO_PULVT12_HV+MC_DTOXE_PULVT12_HV*MC_FLAG*G2'
* (The second term is the GLOBAL process corner model parameter value multiplied by the GLOBAL process corner coefficient, i.e., the process corner model parameter architecture contains the total process corner model parameter, the GLOBAL process corner model parameter and the Monte Carlo process corner model parameter, as described above, GL_ DTOXE _ PULVT12_HV takes on the same value as TL_ DTOXE _ PULVT _HV, GLOBAL_FLAG is the GLOBAL process corner identifier, 1 is open, 0 is closed, MC_FLAG is the Monte Carlo model identifier, 1 is open, 0 is closed, G2 is the Monte Carlo coefficient)
+DXL_PULVT12_HV＝'TL_DXL_PULVT12_HV*(1-GLOBAL_FLAG)*(1-MC_FLAG)+GL_DXL_PULVT12_HV*GLOBAL_FLAG*GL_RATIO_PULVT12_HV+MC_DXL_PULVT12_HV*MC_FLAG*G2'
* (The second term is the GLOBAL process corner model parameter value multiplied by the GLOBAL process corner coefficient, i.e., the process corner model parameter architecture contains the total process corner model parameters, the GLOBAL process corner model parameters and the Monte Carlo process corner model parameters, as described above, GL_DXL_ PULVT12_HV takes the same value as TL_DXL_ PULVT12_HV, GLOBAL_FLAG is the GLOBAL process corner identifier, 1 is open, 0 is closed, MC_FLAG is the Monte Carlo model identifier, 1 is open, 0 is closed, G2 is the Monte Carlo coefficient.)
...
Ends PULVT12$ (end to sub-circuit model)
Table 1 below shows the results of the global process corner model called by the method for constructing the global process corner coefficient according to the present invention compared with the classical formula target value:
Table 1 global process corner model of the invention versus classical formula calculation target value
The invention has better precision, accords with the classical formula calculation target value of the global process angle model, and particularly has more accurate precision of large-size devices (W/L=9 um/9 um), short-channel devices (W/L=9 um/0.054 um), narrow-channel devices (W/L=0.108 um/9 um) and small-size devices (W/L=0.108 um/0.054 um).
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, the scope of the invention is to be indicated by the appended claims.
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