CN114235237A - Silicon pressure sensor chip of balanced structure body - Google Patents
Silicon pressure sensor chip of balanced structure body Download PDFInfo
- Publication number
- CN114235237A CN114235237A CN202111566934.8A CN202111566934A CN114235237A CN 114235237 A CN114235237 A CN 114235237A CN 202111566934 A CN202111566934 A CN 202111566934A CN 114235237 A CN114235237 A CN 114235237A
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- China
- Prior art keywords
- cavity
- substrate
- pressure
- sensor chip
- pressure sensor
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 29
- 239000010703 silicon Substances 0.000 title claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 230000006698 induction Effects 0.000 claims abstract description 19
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
本发明公开了一种平衡式结构体的硅压传感器芯片，包括衬底、感应薄膜和绝压罩；所述感应薄膜设于所述衬底上表面，绝压罩贴合于感应薄膜上表面；所述衬底下部设有合流腔，合流腔中部通过受压腔连通到感应薄膜下表面，合流腔边缘处通过通孔连通衬底上表面；所述感应薄膜上包括基于惠斯通电桥设计的四个压力应变电阻；所述绝压罩下方设置绝压腔，与感应薄膜上表面之间形成密封腔体；绝压罩内还设置有防爆支点。本发明采用芯片通孔结构，解决中高压力介质环境中使用硅背压芯片时芯片和基板结合强度不够的问题，充分发挥硅背压芯片低成本、高灵敏度和体积小的固有特点，从而满足领域内对高可靠和低成本同时需要满足的应用需求。
The invention discloses a silicon pressure sensor chip with a balanced structure, comprising a substrate, a sensing film and an insulating pressure cover; the sensing film is arranged on the upper surface of the substrate, and the insulating pressure cover is attached to the upper surface of the sensing film The lower part of the substrate is provided with a confluence cavity, the middle part of the confluence cavity is connected to the lower surface of the induction film through the pressure cavity, and the edge of the confluence cavity is connected to the upper surface of the substrate through a through hole; the induction film includes a design based on a Wheatstone bridge. There are four pressure strain resistances; an absolute pressure cavity is arranged under the absolute pressure cover, and a sealed cavity is formed between the upper surface of the induction film; an explosion-proof fulcrum is also arranged in the absolute pressure cover. The invention adopts the chip through-hole structure, solves the problem of insufficient bonding strength between the chip and the substrate when the silicon back pressure chip is used in the medium and high pressure medium environment, and fully utilizes the inherent characteristics of low cost, high sensitivity and small size of the silicon back pressure chip, thereby satisfying the field of Internal application requirements for high reliability and low cost need to be met at the same time.
Description
Technical Field
The invention relates to the field of silicon pressure sensors, in particular to a silicon pressure sensor chip of a balanced structural body.
Background
At present, a ceramic pressure sensor and an oil-filled core sensor are mainly used as pressure sensors with medium and large measuring ranges, but the two sensors are high in cost, so that the pressure sensors are difficult to popularize and apply in many occasions. The silicon piezoresistive back pressure chip can well solve the cost problem, but the conventional back pressure chip has a single surface bearing the pressure in a medium environment, and the conventional chip mounting process between the chip and the substrate cannot ensure enough bonding strength, so that the chip can fall off and other fault phenomena when the medium surface of the chip bears medium and high pressure in a working state.
Disclosure of Invention
The invention aims to: the silicon pressure sensor chip with the balanced structure body is designed from the chip, the chip through hole structure is adopted, medium pressure balance is achieved on the front side and the back side of the chip in the working state, the requirement for the bonding strength of glue during the working of the chip is greatly reduced, the reliability of a product is improved, the silicon back pressure chip can replace a ceramic or oil-filled core body, and the low-cost advantage is achieved.
The technical scheme of the invention is as follows:
a silicon pressure sensor chip with a balanced structure body comprises a substrate, an induction film and a pressure-insulating cover; the induction film is arranged on the upper surface of the substrate, and the absolute pressure cover is attached to the upper surface of the induction film;
the lower part of the substrate is provided with a confluence cavity, the middle part of the confluence cavity is communicated to the lower surface of the induction film through a pressure cavity, and the edge of the confluence cavity is communicated with the upper surface of the substrate through a through hole;
the sensing film comprises four pressure strain resistors based on a Wheatstone bridge design;
a pressure-insulating cavity is arranged below the pressure-insulating cover, and a sealed cavity is formed between the pressure-insulating cavity and the upper surface of the induction film; an explosion-proof fulcrum is also arranged in the pressure insulation cover.
Preferably, the upper surface of the substrate is provided with electrode points for outputting an electrical signal generated by the sensing film.
Preferably, the silicon pressure sensor chip is arranged in the shell, and the lower end of the substrate and the lower end of the shell are fixed on the base plate.
Preferably, a first air hole is formed in the position, corresponding to the flow combining cavity, of the substrate, and the shell is free of an air permeable structure.
Preferably, the position, corresponding to the flow combining cavity, on the substrate is free of a ventilation structure, and the shell is provided with a second air hole.
Preferably, the explosion-proof fulcrum and the pressure-insulating cover are integrally formed and are positioned in the middle of the pressure-insulating cavity in the pressure-insulating cover; the end part of the explosion-proof fulcrum is provided with a plane with a certain area, and a gap with a certain distance is reserved between the end part of the explosion-proof fulcrum and the induction film.
Preferably, the number of the through holes is multiple, and the through holes are uniformly distributed at the edge of the confluence cavity.
The invention has the advantages that:
the silicon pressure sensor chip with the balanced structure adopts a chip through hole structure, solves the problem of insufficient bonding strength between the chip and the substrate when the silicon backpressure chip is used in a medium-high pressure medium environment, fully exerts the inherent characteristics of low cost, high sensitivity and small volume of the silicon backpressure chip, and is expected to be widely applied in the fields of automobiles, water pumps and the like, thereby meeting the application requirements of high reliability and low cost in the field.
Drawings
The invention is further described with reference to the following figures and examples:
FIG. 1 is a schematic structural diagram of a silicon pressure sensor chip of a balanced structure according to the present invention;
FIG. 2 is a diagram illustrating a first package structure of a silicon pressure sensor chip according to an embodiment;
fig. 3 is a schematic diagram of a second package structure of a silicon pressure sensor chip in an embodiment.
Detailed Description
As shown in fig. 1, the silicon pressure sensor chip of the balanced structure of the present invention includes a substrate 1, an inductive membrane 2 and an absolute pressure cover 3; the induction film 2 is arranged on the upper surface of the substrate 1, and the absolute pressure cover 3 is attached to the upper surface of the induction film 2.
The lower part of the substrate 1 is provided with a confluence cavity 11, the middle part of the confluence cavity 11 is communicated to the lower surface of the induction film 2 through a pressure cavity 12, and the edge of the confluence cavity 11 is communicated with the upper surface of the substrate 1 through a plurality of through holes 13; the upper surface of the substrate 1 is provided with electrode points 14 for outputting electrical signals generated by the sensing film 2.
The sensing film 2 comprises four pressure strain resistors designed based on a Wheatstone bridge, and the four pressure strain resistors etched on the sensing film by a semiconductor process are usually made of silicon materials to perform physical and electric energy conversion.
A pressure insulation cavity 31 is arranged below the pressure insulation cover 3, and a sealed cavity is formed between the pressure insulation cavity and the upper surface of the induction film 2; an explosion-proof fulcrum 32 is also arranged in the pressure insulation cover 3; the explosion-proof fulcrum 32 and the pressure insulation cover 3 are integrally formed and are positioned in the middle of the pressure insulation cavity 31 in the pressure insulation cover 3; the end of the explosion-proof fulcrum 32 has a plane with a certain area, and a gap with a certain distance is left between the end and the induction film 2.
The packaging design of the silicon pressure sensor chip with the balanced structure body comprises the following two product schemes.
Product scheme 1: as shown in fig. 1, the silicon pressure sensor chip is disposed in a housing 4, and the lower end of the substrate 1 and the lower end of the housing 4 are fixed on a base plate 5. A cavity A is formed among the confluence cavity 11 and the pressure-bearing cavity 12 of the chip and the substrate 5, a cavity B is formed among the chip, the shell 4 and the substrate 5, and a sealed cavity formed among the pressure-insulating cavity 31 of the pressure-insulating cover 3 and the induction film 2 is a cavity C. The base plate 5 is provided with a first air hole 51 corresponding to the position of the confluence cavity 11, and the shell 4 is provided with no air-permeable structure.
Product scheme 2: similar to the product scheme 1 shown in fig. 1, the three chambers include a chamber a, a chamber B, and a chamber C. The difference is that, as shown in fig. 2, there is no air-permeable structure on the substrate 5 corresponding to the confluence chamber 11, and the housing 4 is provided with a second air hole 42.
In both designs, when gas or liquid is conducted to cavity B or cavity a through the through hole 13 in the chip design, either through the first air hole 51 in the substrate 5 or the second air hole 42 in the housing 4. That is, after the cavity A is pressurized, the pressure is distributed to the cavity B, and after the cavity B is pressurized, the pressure is distributed to the cavity A.
Because the cavity C is a sealing structure body, when pressure transmission is carried out, the pressure of the cavity A is equal to the pressure of the cavity B and is greater than or less than the pressure of the cavity C. The sensing film is deformed by utilizing the pressure deviation, and meanwhile, the resistor is pulled to change, so that signal conversion is completed.
In practical applications, the physical effect is partially present, such as the water hammer effect. The pressure born by the sensing film can show exponential increase and tensile rupture occurs, in the design scheme, after the deformation of the film touches the explosion-proof fulcrum, the film stops tensile movement, and the born pressure is conducted to the explosion-proof fulcrum so as to counteract the failure generated by the effect.
The above embodiments are merely illustrative of the technical ideas and features of the present invention, and the purpose of the embodiments is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the protection scope of the present invention. All modifications made according to the spirit of the main technical scheme of the invention are covered in the protection scope of the invention.
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111566934.8A CN114235237A (en) | 2021-12-21 | 2021-12-21 | Silicon pressure sensor chip of balanced structure body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111566934.8A CN114235237A (en) | 2021-12-21 | 2021-12-21 | Silicon pressure sensor chip of balanced structure body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114235237A true CN114235237A (en) | 2022-03-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111566934.8A Pending CN114235237A (en) | 2021-12-21 | 2021-12-21 | Silicon pressure sensor chip of balanced structure body |
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| Country | Link |
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| CN (1) | CN114235237A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6038928A (en) * | 1996-10-07 | 2000-03-21 | Lucas Novasensor | Miniature gauge pressure sensor using silicon fusion bonding and back etching |
| CN104891418A (en) * | 2015-05-29 | 2015-09-09 | 歌尔声学股份有限公司 | MEMS (Micro-Electro-Mechanical System) pressure sensor-MEMS inertial sensor integrated structure |
| CN107036740A (en) * | 2017-04-14 | 2017-08-11 | 苏州敏芯微电子技术股份有限公司 | A kind of microsensor encapsulating structure and its manufacture craft |
| CN107894297A (en) * | 2017-11-07 | 2018-04-10 | 无锡必创传感科技有限公司 | A kind of pressure sensor chip and its manufacture method |
| CN109738109A (en) * | 2019-01-31 | 2019-05-10 | 南京信息工程大学 | A kind of high temperature micro pressure pressure sensor and its manufacturing method, measuring system |
| CN209314160U (en) * | 2018-09-28 | 2019-08-27 | 广东小天才科技有限公司 | Shell with pressure balance structure and electronic equipment with shell |
| CN216846640U (en) * | 2021-12-21 | 2022-06-28 | 苏州感芯微系统技术有限公司 | Silicon pressure sensor chip of balanced structure body |
-
2021
- 2021-12-21 CN CN202111566934.8A patent/CN114235237A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6038928A (en) * | 1996-10-07 | 2000-03-21 | Lucas Novasensor | Miniature gauge pressure sensor using silicon fusion bonding and back etching |
| CN104891418A (en) * | 2015-05-29 | 2015-09-09 | 歌尔声学股份有限公司 | MEMS (Micro-Electro-Mechanical System) pressure sensor-MEMS inertial sensor integrated structure |
| CN107036740A (en) * | 2017-04-14 | 2017-08-11 | 苏州敏芯微电子技术股份有限公司 | A kind of microsensor encapsulating structure and its manufacture craft |
| CN107894297A (en) * | 2017-11-07 | 2018-04-10 | 无锡必创传感科技有限公司 | A kind of pressure sensor chip and its manufacture method |
| CN209314160U (en) * | 2018-09-28 | 2019-08-27 | 广东小天才科技有限公司 | Shell with pressure balance structure and electronic equipment with shell |
| CN109738109A (en) * | 2019-01-31 | 2019-05-10 | 南京信息工程大学 | A kind of high temperature micro pressure pressure sensor and its manufacturing method, measuring system |
| CN216846640U (en) * | 2021-12-21 | 2022-06-28 | 苏州感芯微系统技术有限公司 | Silicon pressure sensor chip of balanced structure body |
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