CN114242843A - Heterojunction solar cell and preparation method thereof - Google Patents
Heterojunction solar cell and preparation method thereof Download PDFInfo
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- CN114242843A CN114242843A CN202111672703.5A CN202111672703A CN114242843A CN 114242843 A CN114242843 A CN 114242843A CN 202111672703 A CN202111672703 A CN 202111672703A CN 114242843 A CN114242843 A CN 114242843A
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- H—ELECTRICITY
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- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
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- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
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- H—ELECTRICITY
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- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
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- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
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Abstract
The invention relates to a heterojunction solar cell and a preparation method thereof. The preparation method of the heterojunction solar cell comprises the following steps: texturing two sides of the silicon wafer, and then sequentially preparing an intrinsic layer, a doping layer and a transparent conducting layer on the textured surface; preparing a plurality of silicon oxide units distributed at intervals on the surface of the transparent conducting layer far away from the doping layer, wherein the refractive index of the silicon oxide units is between that of air and that of the transparent conducting layer; preparing a grid line electrode between adjacent silicon oxide units; and sequentially carrying out curing and light injection treatment to obtain the heterojunction solar cell. The preparation method has the advantages of low raw material cost, simple process and easy realization, and the heterojunction solar cell obtained by the preparation method has high short-circuit current and photoelectric conversion efficiency.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a heterojunction solar cell and a preparation method thereof.
Background
In order to enable more light to enter a Heterojunction (HJT) solar cell and thus improve the short-circuit current and the photoelectric conversion efficiency of the heterojunction solar cell, there are two main methods In the conventional art, the first method is to use a Transparent Conductive Oxide (TCO) layer as an anti-reflection layer, however, the material of the transparent conductive layer includes an indium oxide-based transparent conductive material, the metal indium (In) In the indium oxide-based transparent conductive material belongs to rare metals, and the earth crust content is rare, so the target material for sputtering the indium oxide-based transparent conductive material is expensive, and the raw material cost of the heterojunction solar cell is high; the second approach is to sputter MgF onto the heterojunction solar cell2Antireflection layers, however, on sputtering MgF2Shielding the main grid line before the antireflection layer and sputtering MgF2Damage can be caused to the heterojunction solar cell during the process, and the subsequent photo-repairing or thermal-repairing is needed, so that the process is complex.
Disclosure of Invention
In view of the above, there is a need to provide a heterojunction solar cell and a preparation method thereof, wherein the preparation method has the advantages of low raw material cost, simple process and easy implementation, and the heterojunction solar cell obtained by the preparation method has excellent short-circuit current and photoelectric conversion efficiency.
The invention provides a preparation method of a heterojunction solar cell, which comprises the following steps:
texturing two sides of the silicon wafer, and then sequentially preparing an intrinsic layer, a doping layer and a transparent conducting layer on the two textured sides;
preparing a plurality of silicon oxide units distributed at intervals on the surface of the transparent conducting layer far away from the doping layer, wherein the refractive index of the silicon oxide units is between that of air and that of the transparent conducting layer;
preparing a grid line electrode between adjacent silicon oxide units; and
and curing and light injection treatment are sequentially carried out to obtain the heterojunction solar cell.
In one embodiment, the silicon oxide units are arranged in an array.
In one embodiment, in the step of preparing the gate line electrode between adjacent silicon oxide units, a distance between the gate line electrode and the adjacent silicon oxide units is 40 μm to 60 μm.
In one embodiment, the transparent conductive layer has a refractive index of 1.8 to 2.1, and the silicon oxide unit has a refractive index of 1.35 to 1.55.
In one embodiment, the step of preparing a plurality of silicon oxide units distributed at intervals on the surface of the transparent conductive layer away from the doped layer comprises:
providing a silicon oxide slurry;
and printing a plurality of silicon oxide slurry units distributed at intervals on the surface of the transparent conducting layer far away from the doping layer, and drying to obtain the silicon oxide units.
In one embodiment, the silica slurry unit has a thickness of 1 μm to 10 μm.
In one embodiment, the mass fraction of the silica in the silica slurry is 40% to 80%, and the particle size of the silica is 10 μm or less.
In one embodiment, the temperature during drying is from 120 ℃ to 180 ℃.
The heterojunction solar cell comprises a silicon wafer, and an intrinsic layer, a doping layer and a transparent conducting layer which are sequentially stacked on two suede surfaces of the silicon wafer, wherein a plurality of silicon oxide units distributed at intervals are further arranged on the surface, away from the doping layer, of the transparent conducting layer, and a grid line electrode is arranged between every two adjacent silicon oxide units.
In one embodiment, the transparent conductive layer has a thickness of 45nm to 60nm, and the silicon oxide unit has a thickness of 1 μm to 10 μm.
According to the preparation method of the heterojunction solar cell, the silicon oxide units are prepared at intervals, and the grid line electrode is prepared between the adjacent silicon oxide units, so that the patterns of the grid line electrode and the silicon oxide units are opposite, when the silicon oxide units and the transparent conducting layer form a double-layer antireflection structure, on one hand, the reflection of sunlight on the surface of the heterojunction solar cell can be reduced, more photons are emitted into the heterojunction solar cell, and further, the short-circuit current and the photoelectric conversion efficiency of the heterojunction solar cell are improved under the condition that other cell parameters of the heterojunction solar cell are not influenced; on the other hand, the thickness of the transparent conducting layer can be reduced, so that the consumption of raw materials of the transparent conducting layer is reduced, and the cost of the heterojunction solar cell can be reduced.
In addition, the silicon oxide unit has good compactness and excellent water resistance and acid resistance, so the reliability of the heterojunction solar cell can be improved.
Drawings
Fig. 1 is a flow chart of a method of fabricating a heterojunction solar cell provided by the present invention;
fig. 2 is a cross-sectional view of a heterojunction solar cell in accordance with an embodiment of the present invention;
fig. 3 is a top view of the heterojunction solar cell of fig. 2 according to the invention.
In the figure, 10, a silicon wafer; 20. an intrinsic layer; 30. doping layer; 40. a transparent conductive layer; 50. a silicon oxide unit; 60. and a gate line electrode.
Detailed Description
The heterojunction solar cell and the preparation method thereof provided by the invention are further explained below.
Referring to fig. 1 to 3, a method for manufacturing a heterojunction solar cell according to the present invention includes the following steps:
s10, performing texturing treatment on two sides of the silicon wafer 10, and then sequentially preparing an intrinsic layer 20, a doping layer 30 and a transparent conducting layer 40 on the two textured surfaces;
s20, preparing a plurality of silicon oxide units 50 distributed at intervals on the surface of the transparent conducting layer 40 far away from the doped layer 30;
s30, preparing a gate line electrode 60 between adjacent silicon oxide units 50; and
and S40, sequentially carrying out curing and light injection treatment to obtain the heterojunction solar cell.
It should be noted that, since the intrinsic layer 20, the doped layer 30 and the transparent conductive layer 40 are sequentially prepared on both textured surfaces in step S10, step S10 obtains a double-sided symmetrical structure, and specifically, step S10 includes the following steps:
s101, performing texturing treatment on the silicon wafer 10 to enable two surfaces of the silicon wafer 10 to form textured structures;
s102, forming an intrinsic layer 20 and a doped layer 30 on the two textured structures;
and S103, forming a transparent conductive layer 40 on the surface of the doped layer 30 far away from the intrinsic layer 20.
Step S101 includes: the silicon wafer 10 is subjected to texturing using an alkaline solution selected from a NaOH solution, a KOH solution, or the like.
In one embodiment, the silicon wafer 10 is selected from an N-type silicon wafer 10.
In step S102, the intrinsic layer 20 and the doped layer 30 may be prepared by a vapor deposition method of plasma enhanced chemical, and optionally, the intrinsic layer 20 is an intrinsic amorphous silicon layer, and the doped layer 30 is an N layer or a P layer formed by amorphous silicon or microcrystalline silicon.
In step S103, the transparent conductive layer 40 may be prepared by a physical vapor deposition method, and optionally, the transparent conductive layer 40 is made of an indium oxide-based transparent conductive material.
In step S20, the refractive index of the silicon oxide unit 50 is between the refractive index of air and the refractive index of the transparent conductive layer 40, and in one embodiment, the refractive index of the transparent conductive layer 40 is 1.8-2.1, and the refractive index of the silicon oxide unit 50 is 1.35-1.55.
In one embodiment, the silicon oxide units 50 are arranged in an array.
The shape of the silicon oxide unit 50 is not limited in the present invention, and for example, the silicon oxide unit 50 may be a cube, a cuboid, a cylinder, or other geometric shapes.
In one embodiment, step S20 includes the following steps:
s201, providing silicon oxide slurry;
and S202, printing a plurality of silicon oxide slurry units distributed at intervals on the surface of the transparent conductive layer 40 far away from the doped layer 30, and drying to obtain the silicon oxide units 50.
In step S201, the silica slurry includes silica, resin, solvent, and an auxiliary agent.
Considering that the viscosity of the silica paste affects the printing performance and the compactness of the silica unit 50, in one embodiment, the silica has a mass fraction of 40% to 80% in the silica paste.
In one embodiment, the particle size of the silica is 10 μm or less in order to better disperse the silica in the silica slurry.
In step S202, the step of printing a plurality of spaced silica slurry units includes: the screen is placed above the transparent conductive layer 40 far from the doping layer 30, the silicon oxide slurry is spread on the screen, and the printing scraper scrapes the silicon oxide slurry into the meshes of the screen.
In one embodiment, the printing pressure is from 50N to 70N; the printing speed is 100mm/s-300 mm/s; the printing interval is 1.2mm-1.6 mm; the pressing amount of the scraper is 1.7mm-2.1 mm.
In view of the high temperature resistance, in one embodiment, the temperature during drying is 120 ℃ to 180 ℃ for better solvent removal from the silica slurry.
Compared with physical vapor deposition and chemical vapor deposition, the silicon oxide unit 50 formed by printing the silicon oxide slurry unit has the advantages of simple process and easy realization.
Furthermore, the silicon oxide unit 50 formed in step S20 has high density, and thus has excellent water resistance and acid resistance, and improves the reliability of the heterojunction solar cell.
It should be noted that step S30 prepares the gate line electrode 60 between adjacent silicon oxide cells 50, i.e., the silicon oxide cells 50 are in the reverse pattern of the gate line electrode 60.
In one embodiment, when the gate line electrode 60 is prepared between adjacent silicon oxide units 50, the spacing between the gate line electrode 60 and the adjacent silicon oxide units 50 is 40 μm to 60 μm.
Therefore, according to the preparation method of the heterojunction solar cell provided by the invention, the silicon oxide units 50 distributed at intervals are prepared firstly, and then the grid line electrodes 60 are prepared between the adjacent silicon oxide units 50, so that the patterns of the grid line electrodes 60 are opposite to those of the silicon oxide units 50, when the silicon oxide units 50 and the transparent conducting layer 40 form a double-layer antireflection structure, on one hand, the reflection of sunlight on the surface of the heterojunction solar cell can be reduced, more photons are emitted into the heterojunction solar cell, and further, the short-circuit current and the photoelectric conversion efficiency of the heterojunction solar cell are improved under the condition that other cell parameters of the heterojunction solar cell are not influenced; on the other hand, the thickness of the transparent conductive layer 40 can be reduced, and thus the amount of raw materials of the transparent conductive layer 40 can be reduced, and thus the cost of the heterojunction solar cell can be reduced.
Specifically, the raw material of the transparent conductive layer 40 can be reduced by 30% or more.
Note that, the difference between the thicknesses of the gate line electrode 60 and the silicon oxide unit 50 is not limited, and the thickness of the gate line electrode 60 may be greater than or equal to the thickness of the silicon oxide unit 50, or may be smaller than the thickness of the silicon oxide unit 50.
The heterojunction solar cell provided by the embodiment of the invention is prepared by the preparation method of the heterojunction solar cell, and comprises a silicon wafer 10, and an intrinsic layer 20, a doping layer 30 and a transparent conducting layer 40 which are sequentially stacked on a textured structure of the silicon wafer 10, wherein the surface of the transparent conducting layer 40, which is far away from the doping layer 30, is also provided with a plurality of silicon oxide units 50 which are distributed at intervals, and a grid line electrode 60 is arranged between every two adjacent silicon oxide units 50.
In one embodiment, the gate line electrode 60 is composed of a first metal wire and a second metal wire, the first metal wire and the second metal wire are perpendicular to each other, and the adjacent first metal wire and the second metal wire surround to form a unit cell, and the silicon oxide unit 50 is disposed in the unit cell.
In one embodiment, the thickness of the silicon oxide unit 50 is 1 μm to 10 μm.
Because the silicon oxide units 50 are distributed at intervals, and the grid line electrodes 60 are arranged between the adjacent silicon oxide units 50, that is, the grid line electrodes 60 and the silicon oxide units 50 have opposite patterns, when the silicon oxide units 50 and the transparent conductive layer 40 form a double-layer antireflection structure, on one hand, more light is transmitted and emitted into the heterojunction solar cell, and the short-circuit current and the photoelectric conversion efficiency of the heterojunction solar cell are improved; on the other hand, the thickness of the transparent conductive layer 40 can be reduced, and further, the raw material consumption of the transparent conductive layer 40 is reduced, so that the cost of the heterojunction solar cell is reduced.
In the conventional heterojunction solar cell, the thickness of the transparent conductive layer 40 is 70nm to 90nm, in an embodiment, the thickness of the transparent conductive layer 40 in the heterojunction solar cell provided by the invention can be reduced by more than 30%, and the thickness of the transparent conductive layer 40 in the heterojunction solar cell provided by the invention is 45nm to 60 nm.
In one embodiment, the short-circuit current of the heterojunction solar cell can be increased by more than 50mA, and the photoelectric conversion efficiency can be increased by more than 0.1%.
Therefore, the heterojunction solar cell provided by the invention has excellent short-circuit current and photoelectric conversion efficiency, and meanwhile, the cost is low, and the competitiveness is extremely strong.
The heterojunction solar cell and the method for manufacturing the same will be further described with reference to the following specific examples.
Example 1
And (3) performing texturing treatment on two sides of the N-type silicon wafer 10 by using a NaOH solution to enable the two sides of the silicon wafer 10 to form textured structures.
And growing an intrinsic layer 20 and a doped layer 30 on the surface of the textured structure by using a plasma enhanced chemical vapor deposition method.
And depositing a transparent conductive layer 40 on the surface of the doped layer 30 far away from the intrinsic layer 20 by using a physical vapor deposition technology, wherein the material of the transparent conductive layer 40 is an indium oxide-based transparent conductive material.
Referring to table 1, providing a silicon oxide slurry, placing a screen over a transparent conductive layer 40, spreading the silicon oxide slurry on the screen, scraping the silicon oxide slurry into meshes of the screen by a printing scraper, forming a plurality of silicon oxide slurry units with a thickness of 6 μm arranged in an array at intervals on the surface of the transparent conductive layer 40 away from a doped layer 30, and drying at 150 ℃ to form a silicon oxide unit 50, wherein the printing pressure is 60N, the printing speed is 200mm/s, the printing pitch is 1.4mm, and the scraper pressing amount is 1.9 mm.
The grid line electrode 60 is prepared between the adjacent silicon oxide units 50, the patterns of the silicon oxide units 50 are opposite to those of the grid line electrode 60, wherein the distance between the grid line electrode 60 and the adjacent silicon oxide units 50 is 50 μm.
And curing and light injection treatment are sequentially carried out to obtain the heterojunction solar cell.
TABLE 1
| Silicon oxide | Resin composition | Dispersing agent | Additive agent | Solvent(s) | |
| Example 1 | 62％ | 13％ | 5％ | 5％ | 15％ |
Comparative example 1
And (3) carrying out texturing treatment on the N-type silicon wafer 10 by using a NaOH solution, so that two sides of the silicon wafer 10 form textured structures.
And growing an intrinsic layer 20 and a doped layer 30 on the surface of the textured structure by using a plasma enhanced chemical vapor deposition method.
And depositing a transparent conductive layer 40 on the surface of the doped layer 30 far away from the intrinsic layer 20 by using a physical vapor deposition technology, wherein the material of the transparent conductive layer 40 is an indium oxide-based transparent conductive material.
The gate line electrode 60 is prepared on the surface of the transparent conductive layer 40 away from the doped layer 30.
And curing and light injection treatment are sequentially carried out to obtain the heterojunction solar cell.
The short-circuit current and the photoelectric conversion efficiency of the heterojunction solar cells obtained in example 1 and comparative example 1 were tested, and compared with the heterojunction solar cell obtained in comparative example 1, the short-circuit current of the heterojunction solar cell obtained in example 1 was increased by 50mA, and the photoelectric conversion efficiency was increased by 0.1%.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A preparation method of a heterojunction solar cell is characterized by comprising the following steps:
texturing two sides of the silicon wafer, and then sequentially preparing an intrinsic layer, a doping layer and a transparent conducting layer on the two textured sides;
preparing a plurality of silicon oxide units distributed at intervals on the surface of the transparent conducting layer far away from the doping layer, wherein the refractive index of the silicon oxide units is between that of air and that of the transparent conducting layer;
preparing a grid line electrode between adjacent silicon oxide units; and
and curing and light injection treatment are sequentially carried out to obtain the heterojunction solar cell.
2. The method of claim 1, wherein the silicon oxide cells are arranged in an array.
3. The method of claim 1, wherein in the step of forming the grid line electrode between the adjacent silicon oxide units, the distance between the grid line electrode and the adjacent silicon oxide units is 40 μm to 60 μm.
4. The method of claim 1, wherein the transparent conductive layer has a refractive index of 1.8-2.1 and the silicon oxide units have a refractive index of 1.35-1.55.
5. The method of any of claims 1-4, wherein the step of forming a plurality of spaced apart silicon oxide units on the surface of the transparent conductive layer remote from the doped layer comprises:
providing a silicon oxide slurry;
and printing a plurality of silicon oxide slurry units distributed at intervals on the surface of the transparent conducting layer far away from the doping layer, and drying to obtain the silicon oxide units.
6. The method of fabricating a heterojunction solar cell of claim 5, wherein the thickness of the silicon oxide paste cell is 1 μm to 10 μm.
7. The method of claim 5, wherein the silicon oxide slurry comprises 40-80% silicon oxide by mass, and the silicon oxide has a particle size of 10 μm or less.
8. The method of fabricating a heterojunction solar cell of claim 5, wherein the temperature at the time of drying is 120 ℃ -180 ℃.
9. The heterojunction solar cell is prepared by the preparation method of the heterojunction solar cell according to any one of claims 1 to 8, and comprises a silicon wafer, and an intrinsic layer, a doped layer and a transparent conductive layer which are sequentially stacked on two suede surfaces of the silicon wafer, wherein the surface of the transparent conductive layer, which is far away from the doped layer, is also provided with a plurality of silicon oxide units distributed at intervals, and a grid line electrode is arranged between every two adjacent silicon oxide units.
10. The heterojunction solar cell of claim 9, wherein the thickness of the transparent conductive layer is 45nm to 60nm and the thickness of the silicon oxide unit is 1 μ ι η to 10 μ ι η.
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