CN114253082A - Method and device for sampling measurement of glue thickness - Google Patents
Method and device for sampling measurement of glue thickness Download PDFInfo
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- CN114253082A CN114253082A CN202011019892.1A CN202011019892A CN114253082A CN 114253082 A CN114253082 A CN 114253082A CN 202011019892 A CN202011019892 A CN 202011019892A CN 114253082 A CN114253082 A CN 114253082A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
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Abstract
The application discloses a sampling measurement method for gluing thickness, which comprises the following steps: positioning a first sampling point set on a wafer, wherein the first sampling point set is composed of at least one sampling point, and measuring the gluing thickness of each sampling point in the first sampling point set; judging whether a further sampling strategy needs to be executed or not according to the gluing thickness of each sampling point in the first sampling point set; and if so, performing gluing thickness measurement on the wafer by adopting a preset sampling strategy. By carrying out first sampling measurement on the wafer and judging whether second sampling measurement is necessary or not according to the first sampling measurement result, when the judgment is needed, the wafer is sampled and measured again by adopting a preset sampling strategy, so that the manual intervention is reduced, the time and the labor are saved, and the wafer production efficiency can be improved.
Description
Technical Field
The application relates to the technical field of semiconductor manufacturing, in particular to a method and a device for sampling and measuring gluing thickness.
Background
In the production of semiconductor integrated circuits, hundreds of processes are required for each wafer to finally form a product from a raw material, and all the processes performed by the wafer constitute the whole process flow.
Since semiconductor integrated circuits are high precision products, Critical Dimensions (CD) are on the order of submicron to nanometer. Therefore, in a semiconductor manufacturing line, a lot of measurement means are used to track whether each parameter of a semiconductor integrated circuit manufactured on a wafer meets design requirements during the manufacturing process, so as to ensure the product quality of the semiconductor integrated circuit, the stability of the manufacturing process and the stable operation of the manufacturing equipment.
One of the measurement methods is the measurement of the coating thickness during the exposure process, which is usually performed on a wafer by sampling measurement, and if a point with poor coating thickness appears in the sampled measurement points, a technician is required to stop the subsequent process, and spend time on-line and manually check that the coating thickness at other points on the wafer does not meet the requirement to determine whether to rework, which is time-consuming and labor-consuming and has low wafer production capacity.
Disclosure of Invention
The purpose of the present application is to provide a method and a device for sampling and measuring the thickness of a coated adhesive, which are provided for overcoming the defects of the prior art, and the purpose is achieved by the following technical scheme.
A first aspect of the present application proposes a method for sampling measurement of a thickness of a glue application, said method comprising:
positioning a first sampling point set on a wafer, wherein the first sampling point set is composed of at least one sampling point, and measuring the gluing thickness of each sampling point in the first sampling point set;
judging whether a further sampling strategy needs to be executed or not according to the gluing thickness of each sampling point in the first sampling point set;
and if so, performing gluing thickness measurement on the wafer by adopting a preset sampling strategy.
A second aspect of the present application proposes a glue thickness sampling measurement device, said device comprising:
the device comprises a first measurement module, a second measurement module and a third measurement module, wherein the first measurement module is used for positioning a first sampling point set on a wafer, the first sampling point set is composed of at least one sampling point, and the gluing thickness of each sampling point in the first sampling point set is measured;
the judging module is used for judging whether a further sampling strategy needs to be executed according to the gluing thickness of each sampling point in the first sampling point set;
and the second measurement module adopts a preset sampling strategy to measure the gluing thickness of the wafer when the judgment result is yes.
A third aspect of the present application proposes a semiconductor device obtained by the paste thickness sampling measurement method according to the first aspect described above.
The method for sampling and measuring the gluing thickness based on the first aspect has the following beneficial effects:
by carrying out first sampling measurement on the wafer and judging whether second sampling measurement is necessary or not according to the first sampling measurement result, when the judgment is needed, the wafer is sampled and measured again by adopting a preset sampling strategy, so that the manual intervention is reduced, the time and the labor are saved, and the wafer production efficiency can be improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
FIG. 1 is a flow chart illustrating an embodiment of a method for sample measurement of paste thickness according to an exemplary embodiment of the present application;
FIG. 2 is a schematic diagram of a first sampling point set distribution shown in the present application;
FIG. 3 is a schematic diagram of a second sample point set distribution shown in the present application;
FIG. 4 is a schematic diagram of another second set of sampling points distribution shown in the present application;
FIG. 5 is a schematic view of a selected glue application unit shown in the present application;
fig. 6 is a schematic structural diagram of a glue thickness sampling measurement device according to an exemplary embodiment of the present application.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
Various structural schematics according to embodiments of the present disclosure are shown in the figures. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity of presentation. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed.
Generally, after a wafer is coated with glue by a glue coating and developing machine (track machine), sampling detection is required to be performed on the coating thickness of the wafer so as to avoid unqualified products after exposure caused by uneven wafer coating or incomplete wafer coating.
In the prior art, the detection of the wafer gluing thickness is to measure the thickness by randomly positioning some sampling points on the wafer, directly stop the subsequent process of the wafer if points with bad gluing thickness appear in the sampling points, and manually check the wafer by technicians online to determine whether rework is needed, which is time-consuming and labor-consuming, and has low wafer production efficiency.
In order to solve the technical problem, the application provides an improved gluing thickness sampling measurement scheme, firstly carries out first sampling measurement on a wafer, judges whether second sampling measurement is necessary or not according to a first sampling measurement result, and adopts a preset sampling strategy to carry out sampling measurement on the wafer when the judgment is needed, so that the manual intervention is reduced, the time and the labor are saved, and the wafer production efficiency can be improved.
The sampled measurement of the thickness of the glue applied in the present application is explained in detail below with specific examples.
Fig. 1 is a flow chart illustrating an embodiment of a sampled glue thickness measurement method according to an exemplary embodiment of the present application, the sampled glue thickness measurement method including the steps of:
step 101: a first set of sample points is positioned on the wafer and the thickness of the glue applied to each sample point in the first set of sample points is measured.
Aiming at the process of positioning the first sampling point set on the wafer, in order to avoid the problem that the random sampling mode can cause the aggregation of the sampling points, the sampling points are positioned according to a certain distribution rule so as to comprehensively cover the whole wafer. In one embodiment, a second predetermined number of sampling points may be located on the wafer according to a predetermined distribution rule.
It should be noted that the sampling points referred to in this application are all referring to film thickness test points distributed in different film thickness test points on a wafer.
Referring to fig. 2, taking 13 times as an example of the second preset number, a first sampling point set including 13 sampling points is located on the wafer according to the uniform distribution rule from the center to the edge, and the film thickness test points indicated by the numbers 1 to 13 in fig. 2, among the 13 sampling points, 8 sampling points are located in the range of the edge of the wafer and symmetrically arranged along the horizontal direction or the vertical direction, 1 sampling point is located at the center of the wafer, 4 sampling points are located in the middle area of the wafer and symmetrically arranged along the horizontal direction or the vertical direction, and the 13 sampling points uniformly cover the whole wafer.
Taking a wafer diameter of 300mm as an example, among the 13 sampling points, 8 sampling points are disposed in a region other than a diameter of 200mm, 4 sampling points are disposed in a region within the diameter of 200mm, and 1 sampling point is disposed at the center of the wafer.
That is, the positions of these sampling points are set in advance and these positions are arranged symmetrically with respect to each other.
It will be understood by those skilled in the art that the manner of measuring the thickness of the glue applied to each sample point in the first set of sample points may be implemented by using related technologies, and the present application is not limited thereto.
Step 102: and judging whether a further sampling strategy needs to be executed or not according to the gluing thickness of each sampling point in the first sampling point set.
In some embodiments, in the photoresist spin coating process, there is a certain range requirement for the photoresist thickness, and if the actual photoresist thickness of a certain point exceeds the range requirement, the point is indicated as a bad point, so that it can be centrally found out whether there is a sampling point where the photoresist thickness is not within the preset thickness range in the first sampling point, and if so, it indicates that the photoresist coated by the photoresist developing machine has uneven thickness or is defective, a further sampling strategy needs to be executed to determine the uneven degree or defective degree; if not, it indicates that the photoresist applied by the paste developer has good thickness uniformity and no further sampling strategy needs to be performed.
Alternatively, the predetermined thickness may range from 850 angstroms to 950 angstroms.
In other embodiments, the thickness uniformity of the photoresist on the wafer is generally in accordance with a normal distribution, and the determination may be made using sigma criteria to improve the accuracy of the determination.
The specific implementation process may include: determining the standard deviation of the gluing thickness of a first sampling point set, judging whether the standard deviation is within a preset standard deviation range, if not, indicating that the thickness uniformity of the photoresist coated by a gluing developing machine is not good, and executing a further sampling strategy to judge the non-uniformity degree; if the standard deviation is within the preset standard deviation range, the thickness uniformity of the photoresist coated by the gumming and developing machine is good, and a further sampling strategy is not required to be executed.
The preset standard deviation range is obtained by testing a large amount of gluing thickness data, and when judging whether the standard deviation is in the preset standard deviation range, a 1 sigma criterion can be adopted, a 2 sigma criterion can also be adopted, and a 3 sigma criterion can also be adopted.
Step 103: and if so, measuring the gluing thickness of the wafer by adopting a preset sampling strategy.
Three sampling strategies are given below:
the first sampling strategy is: selecting sampling points with the gluing thickness not within the preset thickness range from the first sampling point set as bad points (namely bad points), then positioning a second sampling point set surrounding the bad points on the wafer, measuring the gluing thickness of each sampling point in the second sampling point set, finally obtaining the total number of the sampling points with the gluing thickness not within the preset thickness range from the second sampling point set and the first sampling point set, and determining whether the wafer needs to be reworked or not according to the total number of the sampling points.
Wherein the second set of sample points includes a first predetermined number of sample points.
Taking the first preset number 5 as an example, referring to fig. 3, assuming that the gluing thickness of the sampling point indicated by the number 12 does not meet the requirement as a dead pixel, the film thickness test points indicated by the number 14-18 in fig. 3 are located around the 5 sampling points around the dead pixel, and the gluing thickness of the 5 sampling points is measured.
In general, the larger the number of defective points, the more uneven the gluing thickness of the wafer, so that the number of allowable defective film thickness test points can be preset in combination with the total number of film thickness test points on the wafer and the total number of concentrated sampling points of the first sampling point and the second sampling point, and if the total number of sampling points, the thickness of which is not within the preset thickness range, is more than the allowable number, the serious uneven thickness of the photoresist on the wafer is indicated, and rework is required.
It should be noted that, if there are multiple dead pixels, the glue thickness of each sample point in the second sample point set adjacent to the dead pixel needs to be measured for each dead pixel.
The second sampling strategy is: selecting a first sampling point with the gluing thickness not within a preset thickness range from the first sampling point set as a dead point, positioning a second sampling point set which is farthest away from the dead point on the edge of the wafer, measuring the gluing thickness of each sampling point in the second sampling point set, obtaining the total number of the sampling points with the gluing thickness not within the preset thickness range from the second sampling point set and the first sampling point set, and determining whether the wafer needs to be reworked or not according to the total number of the sampling points.
Wherein the second set of sample points includes a first predetermined number of sample points.
Still taking the first preset number 5 as an example, referring to fig. 4, assuming that the gluing thickness of the sampling point indicated by the number 12 does not meet the requirement as a dead point, the 5 sampling points farthest away from the dead point are the film thickness test points indicated by the numbers 14-18 in fig. 3, and the gluing thicknesses of the 5 sampling points are measured.
Generally, the larger the number of the defective points, the more uneven the gluing thickness of the wafer is, so that the number of the test points allowing the defective film thickness to appear can be preset in combination with the total number of the film thickness test points on the wafer and the total number of the concentrated sampling points of the first sampling points and the concentrated sampling points of the second sampling points, and if the total number of the sampling points, the thickness of which is not within the preset thickness range, is more than the allowable number, the serious uneven thickness of the photoresist on the wafer is indicated, and rework is required.
It should be noted that, if there are multiple dead pixels, the glue thickness of each sample point in the second sample point set adjacent to the dead pixel needs to be measured for each dead pixel.
The third sampling strategy is: and taking all points on the wafer which are not measured as a second sampling point set, measuring the gluing thickness of each sampling point in the second sampling point set, obtaining the total number of the sampling points of which the gluing thickness is not within a preset thickness range from the second sampling point set and the first sampling point set, and determining whether the wafer needs to be reworked or not according to the total number of the sampling points.
And the gluing thickness detection of the whole wafer can be completed in a mode of sampling and gluing thickness measurement for a plurality of times in the process of taking all points which are not measured on the wafer as a second sampling point set for gluing thickness.
For the first sampling strategy and the second sampling strategy, when the wafer needs to be further sampled and measured, the uniformity of the thickness of the photoresist on the wafer is not good, and the same problem may occur to other wafers in the same gluing unit from the same batch as the wafer, so that the sampling measurement can be further performed by taking the gluing unit as a unit.
The specific implementation process can be as follows: and after measuring the gluing thickness of each sampling point in the second sampling point set, determining a gluing unit to which the wafer belongs, acquiring other wafers glued by the gluing unit, positioning a third sampling point set with the same position as the second sampling point set on the other wafers, measuring the gluing thickness of each sampling point in the third sampling point set, and determining whether the other wafers need to be reworked according to the gluing thickness of each sampling point in the third sampling point set.
Wherein the third set of sample points also includes a first predetermined number of sample points.
Referring to fig. 5, wafer # 25 is currently inspected, which has a coating unit of cot1-1, and other wafers from coating unit cot1-1 in the same lot as wafer # 25 have samples # 1, #5, #9, #13, #17, #21, # 25. taking the example of the positioning of the second set of sample points on wafer # 25 around the periphery of the defect points, a third set of sample points are positioned on wafers # 1, #5, #9, #13, #17, #21, #25 at the same positions as the second set of sample points, respectively.
For example, for each wafer, the number of sampling points with the unsatisfactory third sampling point set glue thickness can be determined, and whether the wafer needs to be reworked or not is determined according to the number of sampling points with the unsatisfactory third sampling point set glue thickness.
So far, accomplish the flow that above-mentioned figure 1 shows, through carrying out first sampling measurement to the wafer earlier to whether it is necessary to carry out second sampling measurement according to first sampling measurement result, when judging needs, adopt and predetermine the sampling strategy and carry out sampling measurement again to the wafer, reduced manual intervention, save time and laborsaving, can promote wafer production efficiency.
Corresponding to the embodiment of the gluing thickness sampling measuring method, the application also provides an embodiment of the gluing thickness sampling measuring device.
Fig. 6 is a schematic structural diagram of a glue thickness sampling measurement device according to an exemplary embodiment of the present application, the glue thickness sampling measurement device including:
a first measurement module 610, configured to locate a first sampling point set on the wafer, where the first sampling point set is composed of at least one sampling point, and measure a glue thickness of each sampling point in the first sampling point set;
a judging module 620, configured to judge whether a further sampling policy needs to be executed according to the glue coating thickness of each sample point in the first set of sample points;
and the second measurement module 630, if yes, performs the glue thickness measurement again on the wafer by using a preset sampling strategy.
In an optional implementation manner, the determining module 620 is specifically configured to centrally search, in the first sampling point, whether there is a sampling point that is not within a preset thickness range in the gluing thickness; if so, determining that a further sampling strategy needs to be executed; if not, it is determined that no further sampling strategy need be performed.
In an optional implementation manner, the determining module 620 is specifically configured to determine a standard deviation of the gluing thickness of the first sampling point set; judging whether the standard deviation is within a preset standard deviation range or not; if so, determining that no further sampling strategy needs to be executed; if not, it is determined that further sampling strategies need to be performed.
In an alternative implementation, the second measurement module 630 is specifically configured to locate a second sampling point set around the dead pixel on the wafer, where the second sampling point set includes a first preset number of sampling points; measuring the gluing thickness of the second sampling point set; acquiring the total number of sampling points of which the gluing thickness is not within a preset thickness range from the second sampling point set and the first sampling point set; and determining whether the wafer needs to be reworked according to the total number of the sampling points.
In an optional implementation manner, the second measurement module 630 is specifically configured to select, from the first sampling point set, a sampling point where the gluing thickness is not within a preset thickness range as a bad point; locating a second set of sampling points on the edge of the wafer that is furthest from the dead point, the second set of sampling points including a first predetermined number of sampling points; measuring the gluing thickness of each sampling point in the second sampling point set; acquiring the total number of sampling points of which the gluing thickness is not within a preset thickness range from the second sampling point set and the first sampling point set; and determining whether the wafer needs to be reworked according to the total number of the sampling points.
In an alternative implementation, the apparatus further comprises (not shown in fig. 6):
a third measuring module, configured to determine a gluing unit to which the wafer belongs after the second measuring module 630 measures the gluing thickness of each sampling point in the second sampling point set; obtaining other wafers which are coated by the coating unit; locating a third set of sample points on the other wafer at the same location as the second set of sample points; measuring the gluing thickness of each sampling point in the third sampling point set; and determining whether other wafers need to be reworked or not according to the gluing thickness of each sampling point in the third sampling point set.
In an alternative implementation, the second measurement module 630 is specifically configured to use all points on the wafer that are not measured as a second sampling point set; measuring the gluing thickness of each sampling point in the second sampling point set; acquiring the total number of sampling points of which the gluing thickness is not within a preset thickness range from the second sampling point set and the first sampling point set; and determining whether the wafer needs to be reworked according to the total number of the sampling points.
In an optional implementation, the first measurement module 610 is specifically configured to locate a second preset number of sampling points on the wafer according to a preset distribution rule during the process of locating the first sampling point set on the wafer.
The application also provides a semiconductor device which is obtained by adopting the gluing thickness sampling measurement method in the embodiment.
In the above description, the technical details of patterning, etching, and the like of each layer are not described in detail. It will be appreciated by those skilled in the art that layers, regions, etc. of the desired shape may be formed by various technical means. In addition, in order to form the same structure, those skilled in the art can also design a method which is not exactly the same as the method described above. In addition, although the embodiments are described separately above, this does not mean that the measures in the embodiments cannot be used in advantageous combination.
The embodiments of the present disclosure have been described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The scope of the disclosure is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be devised by those skilled in the art without departing from the scope of the present disclosure, and such alternatives and modifications are intended to be within the scope of the present disclosure.
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| CN202011019892.1A CN114253082A (en) | 2020-09-24 | 2020-09-24 | Method and device for sampling measurement of glue thickness |
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| CN202011019892.1A CN114253082A (en) | 2020-09-24 | 2020-09-24 | Method and device for sampling measurement of glue thickness |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050116499A (en) * | 2004-06-08 | 2005-12-13 | 동부아남반도체 주식회사 | Exposing method in semiconductor device |
| JP2008070279A (en) * | 2006-09-15 | 2008-03-27 | Dainippon Screen Mfg Co Ltd | Irregularity inspection device and method, and film forming system |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20050116499A (en) * | 2004-06-08 | 2005-12-13 | 동부아남반도체 주식회사 | Exposing method in semiconductor device |
| JP2008070279A (en) * | 2006-09-15 | 2008-03-27 | Dainippon Screen Mfg Co Ltd | Irregularity inspection device and method, and film forming system |
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Application publication date: 20220329 |