CN114267783A - Medium-high temperature semiconductor thermoelectric conversion module based on thin film integrated crystal grains - Google Patents
Medium-high temperature semiconductor thermoelectric conversion module based on thin film integrated crystal grains Download PDFInfo
- Publication number
- CN114267783A CN114267783A CN202111602015.1A CN202111602015A CN114267783A CN 114267783 A CN114267783 A CN 114267783A CN 202111602015 A CN202111602015 A CN 202111602015A CN 114267783 A CN114267783 A CN 114267783A
- Authority
- CN
- China
- Prior art keywords
- thin film
- medium
- film integrated
- thermoelectric conversion
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
本发明公开了一种可在中高温条件下使用半导体实现热电直接转换的半导体热电转换模块，其结构包括导热基板，导流片，薄膜集成晶粒，晶粒定位器以及绝热填充介质等。本发明各部件材料选择、结构设计和加工工艺中兼顾了热电转换效率、温度有效传递、耐冷热冲击性能、中高温运行可靠性等需求。经实践证明，本半导体热电转换模块在中高温条件下可实现高效率的热电直接转换，且能在温度大幅度升降过程中保证稳定运行。
The invention discloses a semiconductor thermoelectric conversion module which can realize direct thermoelectric conversion using semiconductors under medium and high temperature conditions. In the material selection, structural design and processing technology of each component of the present invention, the requirements of thermoelectric conversion efficiency, effective temperature transfer, resistance to cold and thermal shock, reliability of medium and high temperature operation, and the like are taken into account. It has been proved by practice that the semiconductor thermoelectric conversion module can realize high-efficiency direct thermoelectric conversion under medium and high temperature conditions, and can ensure stable operation in the process of large temperature rise and fall.
Description
Technical Field
The utility model relates to the technical field of semiconductor power generation, in particular to a medium-high temperature semiconductor thermoelectric conversion module based on thin film integrated crystal grains.
Background
The semiconductor thermoelectric conversion module can realize static direct interconversion between thermal energy and electric energy. In our modern life, large-scale industrial production, transportation and small-scale daily life consume a large amount of energy everyday, but the energy is not fully utilized. In the process of energy utilization, a part of energy is not utilized and is converted into heat energy to be dissipated. The semiconductor thermoelectric conversion module can utilize this energy for thermoelectric conversion.
For example, utility model (CN201584931U) discloses a low-temperature semiconductor power generation device for recovering waste heat of small and medium-sized industrial equipment to generate power. The heat collecting device comprises a heat collecting device, a thermoelectric generator and a heat dissipation cooling system, and is characterized in that: the thermoelectric generator adopts a plurality of high-performance P/N type bismuth telluride-based thermoelectric conversion elements which are in a rectangular sheet structure, the plurality of thermoelectric conversion elements are connected in series, a ceramic sheet is respectively placed at the top and the bottom and clamped, a heat-conducting silica gel sheet is adhered to the ceramic sheet at the top, the thermoelectric conversion elements are connected through aluminum electrodes, and a connected thermoelectric conversion element matrix is filled with porous polymer for sealing. The utility model has the advantages that the low-temperature waste heat of medium and small-sized equipment with the heat source temperature of about 100 ℃ can be recovered and reused, thereby reducing the energy consumption. However, since a bismuth telluride-based thermoelectric conversion element is used and deformation and stress of each component during high-low temperature conversion are not taken into consideration, it cannot be used at a high temperature (300 ℃ to 500 ℃).
The utility model patent (CN107248824A) discloses a stacked thermal energy and electric energy conversion module and a power generation device thereof. The device comprises a cold end, a hot end, a cold end heat conduction layer connected to the cold end and a hot end heat conduction layer connected to the hot end; the cold end heat conduction layer and the hot end heat conduction layer are more than one layer and are oppositely arranged to be partially and alternately stacked; a semiconductor thermoelectric element is arranged between the stacked positions of the cold-end heat conduction layer and the hot-end heat conduction layer of each layer, one surface of the semiconductor thermoelectric element is contacted with the cold-end heat conduction layer, and the other surface of the semiconductor thermoelectric element is contacted with the hot-end heat conduction layer; the leading-out terminal of the semiconductor thermoelectric element is connected with a circuit. The stacked heat energy and electric energy conversion module and the power generation device thereof have the advantages of high power generation and refrigeration power, capability of being combined into a super-large unit in a multi-connection mode, small size, high power density, low production and installation cost and no distance limitation between the cold end and the hot end, and create feasible technical support for the application of temperature difference power generation and refrigeration in industry and life. However, the device is designed based on the packaging principle of the semiconductor refrigeration module, and the deformation and stress of each component in the high-low temperature conversion process are not considered in the component selection and the structural design, so that the device cannot be used at a higher temperature (300-500 ℃).
The utility model patent (CN104508846A) discloses a thermoelectric conversion module. Which employs a P-type thermoelectric conversion portion and an N-type thermoelectric conversion portion. It can be seen from the drawings that the thermoelectric conversion portion is a conventional homogeneous crystal grain, not a thin film integrated crystal grain of the present invention.
The utility model patent (CN108028306A) discloses a thermoelectric conversion module and a thermoelectric conversion device. The P-type thermoelectric conversion element and the N-type thermoelectric conversion element are used, and as the materials of the P-type thermoelectric conversion element 3 and the N-type thermoelectric conversion element 4, silicide-based materials, oxide-based materials, skutterudite, half-wheatstone, and the like, manganese silicide (MnSi) can be used1.73) To form a P-type thermoelectric conversion element 3, magnesium silicide (Mg)2Si) becomes the N-type thermoelectric conversion element 4. Referring to the drawings, it can be seen that the thermoelectric conversion element is a conventional homogeneous crystal grain, not a thin film integrated crystal grain of the present invention.
Disclosure of Invention
The utility model aims to overcome the defects of the prior art, and provides a semiconductor thermoelectric conversion module which meets the requirements of thermoelectric conversion efficiency, effective temperature transfer, cold and heat shock resistance, medium and high temperature operation reliability and the like in the material selection, structural design and processing process of each part and can realize efficient and stable thermoelectric direct conversion under medium and high temperature conditions.
The utility model is realized by the following technical scheme:
the utility model mainly comprises a heat-conducting substrate, a flow deflector, a thin film integrated crystal grain, a crystal grain positioner, a heat-insulating filling medium and the like.
The external elastic heat-conducting layer on the outer side of the heat-conducting substrate is made of graphene or carbon nano tubes, and the optimal thickness is 10 microns; the ceramic substrate material on the inner side is aluminum nitride ceramic, aluminum oxide ceramic or silicon nitride ceramic, preferably aluminum nitride ceramic, the thickness is preferably 300 micrometers, and the external dimension is preferably 60 x 60 millimeters; the flow deflector is positioned on the inner side of the heat conducting substrate and sequentially comprises a metal substrate, an internal elastic heat (flow) conducting layer and a metal deposition layer A from outside to inside, wherein the metal substrate is made of simple substances or alloys such as copper, stainless steel, iron, aluminum and the like, preferably stainless steel, the external dimension is preferably 4 millimeters (width) multiplied by 7 millimeters (length) multiplied by 0.3 millimeter (thickness), the internal elastic heat (flow) conducting layer is made of graphene or carbon nanotubes, preferably the thickness is 10 micrometers, the metal deposition layer A is made of gold or platinum, the thickness is 0.1-2 micrometers, and preferably the thickness is 0.3 micrometer; the thin film integrated crystal grain is positioned on the inner side of the flow deflector and is formed by laminating, diffusing and connecting a semiconductor thin film and an insulating medium, the periphery of the thin film integrated crystal grain is provided with an anti-radiation coating, the upper surface and the lower surface of the thin film integrated crystal grain are provided with metal deposition layers B, wherein the semiconductor thin film material is lead telluride, bismuth telluride, silicon-germanium alloy, skutterudite and the like, P type or N type is realized through a component doping process, and the thickness of each layer is 200-10000 nanometers, preferably 1000 nanometers; the insulating medium layer is made of aluminum oxide, aluminum nitride, silicon dioxide, titanium oxide and the like, preferably the silicon dioxide, and the thickness of each layer is 10-1000 nanometers, preferably 200 nanometers; the radiation reduction coating material is gold foil or silver foil, and the thickness is 100-200 nm; the metal deposition layer B is made of gold or platinum, the thickness of the metal deposition layer B is 0.1-2 micrometers, and the preferable thickness of the metal deposition layer B is 0.3 micrometers; the crystal grain positioner is processed into a frame by mica with better heat insulation property, and provides positioning for the horizontal direction of the thin film integrated crystal grains; the heat insulation filling medium material is aerosol heat insulation medium and is used for filling all gaps inside the module to protect and position the internal structure.
Further, the material of the external elastic heat-conducting layer is graphene or carbon nano tubes, the thickness of the external elastic heat-conducting layer is 10 microns, and the material of the ceramic substrate on the inner side is aluminum nitride ceramic, aluminum oxide ceramic or silicon nitride ceramic.
Furthermore, the thickness of the external elastic heat-conducting layer is 10 microns, the thickness of the ceramic substrate on the inner side is 300 microns, and the external dimension is 60 multiplied by 60 millimeters.
Further, the metal substrate is made of copper, stainless steel, iron, aluminum or alloy; the inner elastic heat conduction layer (2-2) is made of graphene or carbon nano tubes; the metal deposition layer A is made of gold or platinum.
Further, the external dimension of the metal substrate is 4 mm (width) x 7 mm (length) x 0.3 mm (thickness), and the thickness of the internal elastic heat-conducting layer is 10 micrometers; the thickness of the metal deposition layer A is 0.1-2 microns.
Furthermore, the thin film integrated crystal grain (3) is formed by laminating, diffusing and connecting a semiconductor thin film and an insulating medium, the periphery of the thin film integrated crystal grain is provided with an anti-radiation coating, the upper surface and the lower surface of the thin film integrated crystal grain are provided with metal deposition layers B, the semiconductor thin film is made of lead telluride, bismuth telluride, silicon-germanium alloy and skutterudite, P type or N type is realized through a component doping process, and the insulating medium is made of aluminum oxide, aluminum nitride, silicon dioxide and titanium oxide; the radiation reduction coating material is gold foil or silver foil; the metal deposition layer B is made of gold or platinum.
Further, the thickness of each layer of the semiconductor film is 200-10000 nanometers, and the thickness of each layer of the insulating medium layer is 10-1000 nanometers; the thickness of the radiation reducing coating is 100-200 nm; the thickness of the metal deposition layer B is 0.1-2 microns.
Furthermore, the crystal grain positioner (4) is processed into a frame by mica with better heat insulation property.
Further, the material of the heat insulation filling medium (5) is aerosol heat insulation medium.
Furthermore, the height of the crystal grain positioner (4) is smaller than that of the thin film integrated crystal grain (3), the thin film integrated crystal grain (3) is sequentially inserted into the blank of the crystal grain positioner (4), and crystal grains in adjacent blanks are of an N type and a P type, so that each flow deflector (2) is connected with one N type thin film integrated crystal grain (3) and one P type thin film integrated crystal grain (3).
Compared with the prior art, the utility model has the following advantages and beneficial effects:
the crystal grain is a thin film integrated crystal grain and is a block-shaped crystal grain formed by stacking thermoelectric semiconductor thin films in parallel, so that the orientation of the crystal grain is greatly improved compared with the conventional homogeneous crystal grain, and the defects of the crystal grain are reduced, thereby effectively improving the overall thermoelectric conversion efficiency of the thermoelectric conversion device; the crystal grain is a thin film integrated crystal grain, and the radiation reducing coating is arranged on the periphery of the thin film integrated crystal grain, so that the heat loss in the horizontal direction can be effectively reduced, the temperature difference between the hot side and the cold side of the thin film integrated crystal grain is ensured, and the overall thermoelectric conversion efficiency is improved; elastic heat conduction (flow) layers with certain thicknesses are arranged between the flow deflectors and the film integrated crystal grains and on the outer side of the heat conduction substrate, so that the deformation of each part caused by cold and hot impact in the processes of welding and operation under medium and high temperature can be effectively compensated while high-efficiency heat conduction and electricity conduction are ensured, the internal and external thermal stress of the module is effectively released in time, and the stable performance of the module in the process of operation is ensured; the heat-conducting substrate is formed by cutting a ceramic plate with good flatness, high strength, strong heat-conducting capacity and good insulating property, and can effectively transfer the temperatures of the cold side and the hot side to the thin film integrated crystal grains while ensuring the appearance size, the shape and the insulation; the flow deflector is a simple substance metal or alloy with excellent electric and heat conducting performance, is connected with the ceramic substrate in a welding or vapor deposition mode, and can ensure that no contact thermal resistance exists between the flow deflector and the ceramic substrate, so that the temperature of the cold side and the hot side is effectively transferred to the thin film integrated crystal grains; according to the utility model, the flow deflector and the to-be-contacted surface of the thin film integrated crystal grain form a metal deposition layer in advance through vapor deposition, and then are connected by using an instantaneous diffusion welding process, so that the connection strength between the flow deflector and the thin film integrated crystal grain is ensured, and meanwhile, the existence of contact thermal resistance is avoided; the crystal grain positioner is processed by mica with better heat insulation, realizes the pre-positioning of the thin film integrated crystal grains, effectively reduces the bypass flow of heat, and ensures the temperature difference of two sides of the thin film integrated crystal grains in the operation process; the utility model fills aerosol into the module inner space under vacuum condition to form heat insulation filling medium, which realizes the protection and positioning of inner structure while ensuring the temperature difference of two sides of the film integrated crystal grain in the operation process.
The requirements of thermoelectric conversion efficiency, effective temperature transfer, cold and heat shock resistance, medium and high temperature operation reliability and the like are considered in the material selection, the structural design and the processing technology of each part; the thin film integrated crystal grains ensure higher thermoelectric conversion efficiency; the elastic heat conduction (flow) layer is used for effectively releasing the internal and external thermal stress of the module, so that the stable performance of the module in the operation process is ensured; the heat-conducting substrate, the flow deflector and the thin film integrated crystal grains are welded by vapor deposition or diffusion, so that thermal contact resistance is avoided, and the temperature on the cold side and the hot side is effectively transferred to the thin film integrated crystal grains; the crystal grain positioner and the heat insulation filling medium realize the protection and the positioning of the internal structure while ensuring the temperature difference of two sides of the film integrated crystal grain in the operation process. The utility model is very suitable for realizing efficient and stable thermoelectric direct conversion under medium-high temperature conditions.
Drawings
In order to more clearly illustrate the technical solutions of the exemplary embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and that for those skilled in the art, other related drawings can be obtained from these drawings without inventive effort. In the drawings:
FIG. 1 is a schematic view of the overall structure of the present invention;
as shown in fig. 1, 1 is a heat conducting substrate, 2 is a flow deflector, 3 is a thin film integrated crystal grain, 4 is a crystal grain locator, and 5 is a heat insulating filling medium;
as shown in the enlarged view of part 1-a, 1-1 is an external elastic heat conduction layer, 1-2 is a ceramic substrate, 2-1 is a metal substrate, 2-2 is an internal elastic heat (flow) conduction layer, and 2-3 is a metal deposition layer a;
as shown in the enlarged view of fig. 1-B, 2-3 is a metal deposition layer, 3-1 is a semiconductor thin film, 3-2 is an insulating dielectric layer, 3-3 is an emission reducing coating layer, and 3-4 is a metal deposition layer B.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to examples and accompanying drawings, and the exemplary embodiments and descriptions thereof are only used for explaining the present invention and are not meant to limit the present invention.
Example 1
Referring to fig. 1, the present embodiment 1 mainly includes a heat conducting substrate 1, a flow deflector 2, a thin film integrated die 3, a die locator 4, a heat insulating filling medium 5, and the like.
The material of the outer elastic heat conduction layer 1-1 on the outer side of the heat conduction substrate 1 is graphene or carbon nano tubes, and the preferable thickness is 10 microns; the inner ceramic substrate 1-2 is made of aluminum nitride ceramic, aluminum oxide ceramic or silicon nitride ceramic, preferably aluminum nitride ceramic, the thickness is preferably 300 micrometers, and the external dimension is preferably 60 x 60 millimeters;
the flow deflector 2 is positioned on the inner side of the heat conducting substrate 1 and sequentially comprises a metal substrate 2-1, an internal elastic heat conducting (flow) layer 2-2 and a metal deposition layer A2-3 from outside to inside. Wherein the metal substrate 2-1 is made of copper, stainless steel, iron, aluminum and other simple substances or alloys, preferably stainless steel, and the external dimension is preferably 4 mm (width) x 7 mm (length) x 0.3 mm (thickness); the material of the inner elastic heat conduction (flow) layer 2-2 is graphene or carbon nano tubes, and the preferable thickness is 10 microns; the metal deposition layer A2-3 is made of gold or platinum, and is 0.1-2 microns thick, preferably 0.3 microns thick;
the film integrated crystal grain 3 is positioned at the inner side of the flow deflector 2 and is formed by overlapping, diffusing and connecting a semiconductor film 3-1 and an insulating medium layer 3-2, the circumferential periphery of the film integrated crystal grain is provided with an emission reduction coating 3-3, and the upper surface and the lower surface of the film integrated crystal grain are provided with metal deposition layers B3-4. The semiconductor film 3-1 is made of lead telluride, bismuth telluride, silicon-germanium alloy, skutterudite and the like, P type or N type is realized through a component doping process, and the thickness of each layer is 200-10000 nm, preferably 1000 nm; the insulating medium layer 3-2 is made of aluminum oxide, aluminum nitride, silicon dioxide, titanium oxide and the like, preferably the silicon dioxide, and the thickness of each layer is 10-1000 nanometers, preferably 200 nanometers; the radiation reduction coating 3-3 is made of gold foil or silver foil, and the thickness is 100-200 nanometers; the metal deposition layer B3-4 is made of gold or platinum, and has a thickness of 0.1-2 microns, preferably 0.3 microns;
the crystal grain positioner 4 is processed into a frame by mica with better heat insulation property, and provides positioning for the horizontal direction of the thin film integrated crystal grains 3;
the heat insulation filling medium 5 is aerosol heat insulation medium and is used for filling all gaps inside the module to protect and position the internal structure.
This example 1 is very suitable for realizing efficient and stable thermoelectric direct conversion under medium-high temperature conditions. This embodiment describes the process of manufacturing, assembling and using a single module. The specific process is as follows:
(1) selecting a thermoelectric semiconductor material (such as lead telluride) and an insulating medium layer material (such as silicon dioxide) according to the using temperature condition;
(2) realizing P type or N type for the thermoelectric semiconductor material through a component doping process;
(3) alternately depositing a semiconductor film 3-1 and an insulating medium layer 3-2 on a separable lining plate by a physical or vapor deposition process, wherein the thickness of the semiconductor film is 200-10000 nm, preferably 1000 nm; the thickness of the insulating dielectric film is 10-1000 nanometers, and preferably 200 nanometers;
(4) when the thickness formed by alternate deposition reaches the required thickness (3 mm is preferred), flaky grains are sequentially formed on a large plate formed by vapor deposition by using the processes of laser, diamond wire saw and the like, the cutting shape can be a cube, a cuboid and the like, the cube is preferred, and the size is preferably 3 mm multiplied by 3 mm (electrode surface);
(5) optionally selecting two opposite cutting surfaces as electrode surfaces, and forming an emission reduction coating 3-3 on the other surfaces through vapor deposition, wherein the material is preferably gold foil or silver foil, and the thickness is preferably 100-200 nm;
(6) forming a metal deposition layer B3-4 on the upper electrode surface and the lower electrode surface through vapor deposition, wherein the material is gold or platinum, the thickness is 0.1-2 microns, and the preferable thickness is 0.3 microns;
(7) repeating the steps (1) to (6) to process a certain number of thin film integrated crystal grains 3;
(8) selecting a ceramic plate (e.g., aluminum nitride ceramic plate) having a suitable thickness (preferably 300 μm), and cutting it into ceramic substrates 1-2 having a suitable size (preferably 60 × 60 mm);
(9) processing a plurality of metal substrates 2-1 on one surface of a ceramic substrate 1-2 by adopting a welding or vapor deposition mode according to circuit design, wherein the metal substrates 2-1 are made of simple substance metal or alloy (preferably stainless steel), and the external dimension is preferably 4 mm (width) x 7 mm (length) x 0.3 mm (thickness);
(10) processing an internal elastic heat (flow) conducting layer 2-2 on the surface of the metal substrate 2-1 through vapor deposition, wherein the internal elastic heat (flow) conducting layer 2-2 is formed by densely distributed carbon nano tubes or graphene bundles which are axially vertical to the surface of the metal substrate 2-1, and the thickness is preferably 10 microns;
(11) forming a metal deposition layer A2-3 on the surface of the internal elastic heat conduction (flow) layer 2-2 through vapor deposition, wherein the metal deposition layer is made of gold or platinum and has the thickness of 0.1-2 microns, and the preferable thickness is 0.3 micron;
(12) processing an external elastic heat conduction layer 1-1 on the other surface of the ceramic substrate 1-2 through vapor deposition, wherein the axial direction of the external elastic heat conduction layer is vertical to the surface of the ceramic substrate 1-2 and is composed of densely distributed carbon nanotubes or graphene bundles, and the thickness is preferably 10 microns;
(13) according to the length and width dimensions of the thin film integrated crystal grains 3, mica with better heat insulation property is used for processing the crystal grain locators 4, and the height of the crystal grain locators 4 is slightly smaller than that of the thin film integrated crystal grains 3 (preferably 2.5 mm);
(14) inserting the processed thin film integrated crystal grains 3 into the spaces of the crystal grain positioner 4 in sequence, and requiring that the crystal grains in the adjacent spaces are of an N type and a P type, so as to ensure that each flow deflector 2 is connected with one N type thin film integrated crystal grain 3 and one P type thin film integrated crystal grain 3;
(15) placing a processed heat conduction substrate 1 and a processed flow deflector 2 on the upper side and the lower side of the combined thin film integrated crystal grain 3 and the crystal grain positioner 4 respectively, wherein a metal deposition layer A2-3 of the flow deflector 2 is required to correspond to and contact a metal deposition layer B3-4 of the thin film integrated crystal grain 3;
(16) using an instantaneous diffusion welding process to complete the connection of the metal deposition layer A2-3 and the metal deposition layer B3-4;
(17) the semiconductor thermoelectric conversion module is characterized in that aerosol is filled into a gap inside the module under a vacuum condition to form a heat insulation filling medium 5, the protection and the positioning of an internal structure are realized while the temperature difference of two sides of a thin film integrated crystal grain is ensured in the operation process, the processing and the assembly of the semiconductor thermoelectric conversion module are completed, the function of realizing thermoelectric direct conversion under the medium-high temperature condition is realized, and the stable operation can be ensured in the process of greatly increasing and decreasing the temperature.
Experiments in a certain medium-high temperature thermoelectric conversion performance test platform prove that the semiconductor thermoelectric conversion module can realize high-efficiency thermoelectric direct conversion under medium-high temperature conditions, and can ensure stable operation in the process of greatly increasing and decreasing the temperature.
The embodiment adopts the thin film integrated crystal grain to realize direct thermoelectric conversion; the elastic heat conduction flow layer is adopted to solve the stress problem in the temperature change process; the effectiveness and the strength of the connection of each part are ensured by adopting a metal deposition layer and an instant diffusion welding process; the high heat conduction ceramic substrate, the metal flow deflector, the elastic heat conduction layer and the metal deposition layer are adopted to effectively transfer the temperature to the hot side and the cold side of the thin film integrated crystal grain; the dissipation of heat in the horizontal direction is reduced by adopting a circumferential radiation reduction layer and a heat insulation filling medium, so that the temperature difference between the hot side and the cold side of the thin film integrated crystal grain is ensured; and the precision of each part in the module assembling process is ensured by adopting the crystal grain positioner. The utility model has an integral structure and materials of all parts, and ensures stable operation under high temperature.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the utility model.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the utility model. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are merely exemplary embodiments of the present invention, and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111602015.1A CN114267783B (en) | 2021-12-24 | 2021-12-24 | A medium- and high-temperature semiconductor thermoelectric conversion module based on thin-film integrated crystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111602015.1A CN114267783B (en) | 2021-12-24 | 2021-12-24 | A medium- and high-temperature semiconductor thermoelectric conversion module based on thin-film integrated crystals |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114267783A true CN114267783A (en) | 2022-04-01 |
| CN114267783B CN114267783B (en) | 2025-05-30 |
Family
ID=80829991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111602015.1A Active CN114267783B (en) | 2021-12-24 | 2021-12-24 | A medium- and high-temperature semiconductor thermoelectric conversion module based on thin-film integrated crystals |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114267783B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996006321A1 (en) * | 1994-08-22 | 1996-02-29 | Iowa State University Research Foundation, Inc. | Heat sink |
| JP2002118297A (en) * | 2000-10-06 | 2002-04-19 | Suzuki Sogyo Co Ltd | Thermoelement module and manufacturing method thereof |
| JP2013089821A (en) * | 2011-10-19 | 2013-05-13 | Toyota Industries Corp | Thermoelectric conversion module |
| US20140103028A1 (en) * | 2012-10-12 | 2014-04-17 | Turk & Hillinger Gmbh | Electric heater and method for manufacturing such an electric heater |
| CN105633263A (en) * | 2014-11-30 | 2016-06-01 | 中国科学院金属研究所 | Carbon nanofiber/diamond composite thin-film material and application thereof as thermal battery energy conversion device |
| CN107623067A (en) * | 2017-08-10 | 2018-01-23 | 南京航空航天大学 | A portable high aspect ratio interlayer connection micro vertical thermoelectric device and its preparation method |
-
2021
- 2021-12-24 CN CN202111602015.1A patent/CN114267783B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996006321A1 (en) * | 1994-08-22 | 1996-02-29 | Iowa State University Research Foundation, Inc. | Heat sink |
| JP2002118297A (en) * | 2000-10-06 | 2002-04-19 | Suzuki Sogyo Co Ltd | Thermoelement module and manufacturing method thereof |
| JP2013089821A (en) * | 2011-10-19 | 2013-05-13 | Toyota Industries Corp | Thermoelectric conversion module |
| US20140103028A1 (en) * | 2012-10-12 | 2014-04-17 | Turk & Hillinger Gmbh | Electric heater and method for manufacturing such an electric heater |
| CN105633263A (en) * | 2014-11-30 | 2016-06-01 | 中国科学院金属研究所 | Carbon nanofiber/diamond composite thin-film material and application thereof as thermal battery energy conversion device |
| CN107623067A (en) * | 2017-08-10 | 2018-01-23 | 南京航空航天大学 | A portable high aspect ratio interlayer connection micro vertical thermoelectric device and its preparation method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114267783B (en) | 2025-05-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108140713B (en) | Thermoelectric conversion module and thermoelectric conversion device | |
| TWI443882B (en) | Thermoelectric apparatus and method of fabricating the same | |
| JP6423731B2 (en) | Semiconductor module | |
| JP5443947B2 (en) | Thermoelectric generator | |
| JP2010245265A (en) | Thermoelectric module | |
| CN101587934A (en) | Thin film thermoelectric conversion module and method for manufacturing same | |
| CN105118915B (en) | Electrothermal module and thermoelectric generator | |
| TWI353673B (en) | Integrated package having solar cell and thermoele | |
| CN109065697B (en) | Annular thermoelectric power generation device | |
| JP2012124469A (en) | Thermoelectric element and thermoelectric module | |
| JP5249662B2 (en) | Thermoelectric conversion module and manufacturing method thereof | |
| CN103311262A (en) | Micro thermoelectric device, production method thereof and temperature difference generator with same | |
| EP2660888A1 (en) | Thermoelectric conversion member | |
| CN108028306B (en) | Thermoelectric conversion module and thermoelectric conversion device | |
| CN116264813A (en) | Low-thermal-resistance thermoelectric module structure and manufacturing method thereof | |
| US20180287517A1 (en) | Phase change inhibited heat-transfer thermoelectric power generation device and manufacturing method thereof | |
| WO2017057259A1 (en) | Thermoelectric conversion module and thermoelectric conversion device | |
| US11393969B2 (en) | Thermoelectric generation cell and thermoelectric generation module | |
| CN114267783B (en) | A medium- and high-temperature semiconductor thermoelectric conversion module based on thin-film integrated crystals | |
| JP7552023B2 (en) | Thermoelectric conversion structure | |
| WO2017164217A1 (en) | Thermoelectric conversion module | |
| JPH11330568A (en) | Thermoelectric generator and method of manufacturing the same | |
| JP2017183709A (en) | Thermoelectric conversion module | |
| JP2003179274A (en) | Thermoelectric converter | |
| JPH02198179A (en) | Thermoelectric element and manufacture thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |