CN114300374B - Etching selectivity measurement method for silicon carbide dielectric layer - Google Patents
Etching selectivity measurement method for silicon carbide dielectric layerInfo
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- CN114300374B CN114300374B CN202111630451.XA CN202111630451A CN114300374B CN 114300374 B CN114300374 B CN 114300374B CN 202111630451 A CN202111630451 A CN 202111630451A CN 114300374 B CN114300374 B CN 114300374B
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Abstract
碳化硅介质层的刻蚀选择比量测方法，属于半导体技术领域，包括以下步骤：使用光谱椭偏仪测量碳化硅上介质层的介质膜厚H1，并通过公式计算得到介质膜厚的评价函数MSE1；制作掩膜层，使用台阶仪量测掩膜层厚度Ht；基于所述步骤S2量测的掩膜层厚度Ht，使用光谱椭偏仪测量掩膜层厚度Hy，并通过公式计算得到所述掩膜层厚度的评价函数MSEy；刻蚀含有掩膜的碳化硅上介质层，使用台阶仪量测刻蚀后台阶深度Het，使用椭偏仪测量刻蚀后掩膜层厚度Hey；根据公式计算刻蚀选择比。本方法使刻蚀过程中的碳化硅上掩膜层的厚度量测更加精确，从而使碳化硅上的介质层相对于掩膜层的选择比刻蚀工艺调试结果更加具有可信度。
A method for measuring the etching selectivity of a silicon carbide dielectric layer belongs to the field of semiconductor technology and includes the following steps: measuring the dielectric film thickness H1 of the dielectric layer on the silicon carbide using a spectroscopic ellipsometer and calculating an evaluation function MSE1 of the dielectric film thickness using a formula; fabricating a mask layer and measuring the mask layer thickness Ht using a step profiler; based on the mask layer thickness Ht measured in step S2, measuring the mask layer thickness Hy using a spectroscopic ellipsometer and calculating an evaluation function MSEy of the mask layer thickness using a formula; etching the silicon carbide dielectric layer containing the mask, measuring the step depth Het after etching using a step profiler and the mask layer thickness Hey after etching using an ellipsometer; and calculating the etching selectivity according to a formula. This method makes the thickness measurement of the silicon carbide mask layer more accurate during the etching process, thereby making the etching process debugging results of the dielectric layer on the silicon carbide with respect to the mask layer more reliable.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for measuring etching selection ratio of a silicon carbide dielectric layer.
Background
The third-generation semiconductor material silicon carbide has the characteristics of high critical breakdown electric field, high thermal conductivity, high saturated electron drift speed and the like, so that the silicon carbide can play a better role than a silicon material in the fields of high temperature, high voltage and high frequency. In the fields of power electronics, radio frequency devices and optoelectronic devices, MOSFETs, HEMTs, and the like using silicon carbide as a substrate are being increasingly studied.
The dry etching process mainly uses ions or free radicals in plasma generated by low-voltage discharge to chemically react with materials or achieve the purpose of etching through physical actions such as bombardment. The basic goal is to properly replicate the mask pattern on the glued substrate or dielectric layer. The main parameters of interest in dry etching are etch selectivity and etch morphology. In the process of debugging the selective ratio etching process of the silicon carbide dielectric layer, the cost of the silicon carbide wafer and the time and labor consumption of SEM section slice observation are considered, and a step instrument and an ellipsometer are commonly adopted to measure in a matching way and calculate the etching selective ratio. However, the capability of the existing ellipsometer for measuring the multilayer film is weak, the thickness of the mask layer is continuously changed along with the occurrence of etching of the dielectric layer on the silicon carbide substrate, and the measured result is greatly deviated from the actual value only by measuring the thickness of the mask layer through the ellipsometer. The method takes the mask layer measured by the step instrument as an initial parameter, takes the thickness of the dielectric layer on the silicon carbide as an intermediate variable, adjusts the thickness of the dielectric layer in the measuring process of the ellipsometer to ensure that the thickness of the mask layer before etching measured by the ellipsometer is equal to the thickness of the step before etching measured by the step instrument, and measures the thickness of the mask layer on the dielectric layer on the etched silicon carbide based on the determined thickness of the dielectric layer on the silicon carbide.
Use in the calculation of statistical correction sample varianceWhere n represents the number of samples of the fitted mean and 1 represents the fitted parameter sample mean. The formula can evaluate the change degree of the data, and the smaller the MSE value is, the better accuracy of the prediction model description experimental data is shown.
Disclosure of Invention
The invention aims to provide a method for measuring the etching selectivity of a silicon carbide dielectric layer, which aims to solve the problem of accurate measurement of the etching selectivity of the dielectric layer on silicon carbide relative to a mask layer.
The etching selection ratio measuring method of the silicon carbide dielectric layer comprises the following steps:
Step S1, measuring a dielectric film thickness H1 of a dielectric layer on silicon carbide by using a spectrum ellipsometer, and calculating to obtain an evaluation function MSE1 of the dielectric film thickness by a formula;
S2, manufacturing a mask layer, and measuring the thickness Ht of the mask layer by using a step instrument;
step S3, measuring the thickness Hy of the mask layer by using a spectrum ellipsometer based on the thickness Ht of the mask layer measured in the step S2, and calculating to obtain an evaluation function MSEy of the thickness of the mask layer by a formula;
Step S4, etching the silicon carbide upper dielectric layer containing the mask, measuring the depth Het of the etched step by using a step instrument, measuring the thickness Hey of the etched mask layer by using an ellipsometer, and calculating according to a formula to obtain an evaluation function MSEey of the thickness of the etched mask layer;
And S5, calculating the etching selection ratio according to a formula.
Further, the step S1 includes the steps of:
S101, selecting a silicon carbide substrate, and growing a dielectric layer on the silicon carbide substrate;
s102, measuring the dielectric film thickness H1 of a dielectric layer by using a spectrum ellipsometer, and obtaining amplitude attenuation phi and phase change delta;
S103, calculating an evaluation function MSE1 of the dielectric film thickness through a formula according to the obtained amplitude attenuation phi and the phase change delta.
Further, the evaluation function MSE formula is:
;
N=cos(2φ);
C=cos(2φ)cos(Δ);
S=sin(2φ)sin(Δ);
Wherein n is the number of measurement wavelengths, m is the number of fitting parameters, E is the data of measurement points, G is the data of corresponding fitting points, delta and phi are the data detected by a spectrum ellipsometer, delta is the phase change and phi is the amplitude attenuation.
Further, the measurement angle range of the spectrum ellipsometer is 0-90 degrees, and the wavelength range is 190-1040 nm.
Further, the value of the evaluation function MSE1 of the dielectric film thickness H1 in the step S1 is smaller than 20.
Further, the measuring length of the step instrument is 0-20000 mu m, the probe pressure is 0-15 mg, and the measuring time is 0-60 s.
Further, the mask layer thickness Hy measured by the spectroscopic ellipsometer in the step S3 and the mask thickness Ht measured by the step analyzer satisfy the formula |ht-hy|/Ht less than or equal to 2%, and the value of the evaluation function MSEy of the mask layer thickness Hy is less than 20.
Further, the position measured by the step meter in the step S4 is the same as the position measured by the step meter in the step S3, and the measurement length, the probe pressure and the measurement time used by the step meter in the step S4 are also the same as the measurement length, the probe pressure and the measurement time in the step S3.
Further, the value of the evaluation function MSEey of the post-etching mask layer thickness Hey measured in the step S4 is smaller than 20.
Further, the etching selection ratio formula is (Het-Hey)/(Hy-Hey).
The method enables the thickness measurement of the mask layer on the silicon carbide in the etching process to be more accurate, so that the selection of the dielectric layer on the silicon carbide relative to the mask layer is more reliable than the debugging result of the etching process.
Drawings
FIG. 1 is a schematic diagram of a mask layer structure on a dielectric layer on a silicon carbide substrate;
FIG. 2 is a schematic diagram of a step meter measuring steps.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings for a better understanding of the objects, structures and functions of the present invention.
The etching selection ratio measuring method of the silicon carbide dielectric layer comprises the following steps:
Step S1, selecting a silicon carbide substrate, growing a dielectric layer on the silicon carbide substrate, measuring the dielectric film thickness H1 of the dielectric layer by a single point of a spectrum ellipsometer, and calculating to obtain an evaluation function MSE1 of the dielectric film thickness through a formula;
Preferably, the silicon carbide substrate in the step S1 includes a silicon carbide substrate slice and a silicon carbide epitaxial slice, and the silicon carbide substrate is a slice with a size of 2 inches, 4 inches, 5 inches, 6 inches, 8 inches, 10 inches or an irregular slice which accords with the rule of the GB/T30866-2014 silicon carbide single crystal wafer diameter test method;
Preferably, the dielectric layer on the silicon carbide substrate in the step S1 is a film formed by growing different layers on the silicon carbide substrate by various physical or chemical processes such as PVD, CVD, high temperature oxidation, etc., wherein the grown film layer includes a single layer film or a multi-layer film on the silicon carbide substrate, such as silicon carbide on silicon carbide, silicon oxide on silicon carbide, silicon nitride on silicon carbide, polysilicon on silicon carbide, gallium nitride on silicon carbide, polysilicon on silicon oxide on silicon carbide, silicon nitride on gallium nitride on silicon carbide, silicon oxide on gallium nitride on silicon carbide, and polysilicon on silicon nitride on silicon carbide. The film strength must be ensured to be transparent or semi-transparent.
The measurement angle range of the spectrum ellipsometer is 0-90 degrees, and the wavelength range is 190-1040 nm.
The evaluation function MSE formula is:
N=cos(2φ)
C=cos(2φ)cos(Δ)
S=sin(2φ)sin(Δ)
Wherein n is the number of measurement wavelengths, m is the number of fitting parameters, E is the data of measurement points, G is the data of corresponding fitting points, delta and phi are the data detected by a spectrum ellipsometer, delta is the phase change and phi is the amplitude attenuation.
3N represents the data accumulation, here 3 sets 1 to n, m being the number of fitted parameters. The parameters of N, C, S are typically repeatable and accurate at 0.001, so the root number needs to be multiplied by 1000.
In particular, the value of the evaluation function MSE1 of the dielectric film thickness H1 must be less than 20.
And S2, manufacturing a mask layer, and measuring the thickness Ht of the mask layer by using a step instrument.
The mask layer in the step S2 is prepared by adopting various physical or chemical processes such as photoetching, PVD, CVD, high-temperature oxidation and the like on a dielectric layer on a silicon carbide substrate, wherein the prepared mask layer comprises a silicon oxide layer, a nitride layer, a photoresist layer and a metal layer, and the mask layer needs to ensure light transmission or semi-transmission;
The step S2 is that the step which can be measured by the step instrument probe is arranged on the mask layer on the dielectric layer on the silicon carbide substrate, the step comprises pits or protrusions, the radius of the step instrument probe is 0.2 mu m, 0.7 mu m and 2 mu m to 5 mu m, and the width of the pits or protrusions of the mask layer is required to be larger than the diameter of the probe.
Preferably, the measuring length of the step instrument is 0-20000 mu m, the probe pressure is 0-15 mg, and the measuring time is 0-60 s.
The step S2 is a step measuring method, which comprises the specific processes of selecting different measuring lengths, probe pressures and measuring times, and putting down pins at the places with steps on the mask layer to obtain the step depth Ht, wherein the step depth is the thickness of the mask layer measured by the step.
And step S3, based on the mask layer thickness Ht measured by the step S2, measuring the mask layer thickness Hy by using a single point of the spectrum ellipsometer, and simultaneously obtaining an evaluation function MSEy of the mask layer thickness.
Particularly, the mask layer thickness Hy measured by a spectrum ellipsometer and the mask thickness Ht measured by a step analyzer are required to satisfy the formula of |Ht-Hy|/Ht less than or equal to 2%, and the value of an evaluation function MSEy of the mask layer thickness H ellipsometry is required to be smaller than 20.
And S4, etching the silicon carbide upper dielectric layer containing the mask, measuring the depth Het of the etched step by using a step instrument, measuring the thickness Hey of the etched mask layer by using an ellipsometer single point for a single time, and calculating to obtain an evaluation function MSEey of the film thickness of the etched mask layer according to an evaluation function MSE formula.
In particular, the value of the evaluation function MSEey of the mask layer thickness Hey after etching should be less than 20, and the measurement position is the same mask step measurement position in step S3, and the measurement length, probe pressure and measurement time used are the same as those in step S3.
And S5, calculating the etching selection ratio according to a formula.
The etching selection ratio formula is (Het-Hey)/(Hy-Hey).
Specifically, in the step S1, a 4-inch silicon carbide substrate slice is selected, a dielectric layer SiO2 with a certain thickness is grown on the substrate slice by an LPCVD process, when the measuring angle is 70 degrees and the wavelength range is 190-1040 nm, the thickness of the SiO2 on the silicon carbide is 2880nm, an evaluation function MSE1 of the dielectric film thickness is calculated to be 7.8 according to a formula, the value of the evaluation function MSE1 is smaller than 20, and the next step is carried out.
And S2, manufacturing a mask layer and a photoetching pattern on a silicon oxide dielectric layer on silicon carbide by adopting a photoetching process, measuring the thickness of the mask layer by using a step instrument, namely measuring the step depth of a place without photoresist shielding, selecting 400 mu m for measuring length, selecting 3mg for probe pressure and selecting 6S for measuring time, and measuring the thickness Ht of the photoresist mask layer to 1178nm.
The step S3 is to obtain an evaluation function 4.5 according to the data measured by the ellipsometer and a calculation formula, wherein the evaluation function is 4.5 is less than or equal to 20, and finally the requirements are met according to the formula |Ht-Hy|/Ht=1.0% -2%, wherein the thickness Ht of the photoresist mask measured by the step S2 is based on the thickness Ht of the photoresist mask measured by the step S2 and the thickness of the photoresist mask measured by the ellipsometer is 1166nm;
Step S4, etching SiO2 by adopting an etching process, measuring the depth of a step without shielding by a photoresist mask layer by using a step instrument, selecting 400 mu m in measurement length, 3mg in probe pressure, 6S in measurement time, measuring the depth of the step to be 2806nm, measuring the thickness of the photoresist mask after etching to be 186nm by using an ellipsometer, and evaluating the thickness of the photoresist mask to be 6.8-20;
Step S5 is that based on the thickness 1166nm of the photoresist before etching measured by the ellipsometer in step S3, the thickness 186nm of the photoresist after etching measured by the ellipsometer in step S4 and the step depth 2806nm of the photoresist mask without photoresist after etching measured by the step instrument, the etching selectivity of the silicon oxide to the photoresist is calculated to be 2.67.
It will be understood that the application has been described in terms of several embodiments, and that various changes and equivalents may be made to these features and embodiments by those skilled in the art without departing from the spirit and scope of the application. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the application without departing from the essential scope thereof. Therefore, it is intended that the application not be limited to the particular embodiment disclosed, but that the application will include all embodiments falling within the scope of the appended claims.
Claims (5)
1. The etching selection ratio measuring method of the silicon carbide dielectric layer is characterized by comprising the following steps of:
Step S1, measuring a dielectric film thickness H1 of a dielectric layer on silicon carbide by using a spectrum ellipsometer, and calculating to obtain an evaluation function MSE1 of the dielectric film thickness by a formula;
S2, manufacturing a mask layer, and measuring the thickness Ht of the mask layer by using a step instrument;
step S3, measuring the thickness Hy of the mask layer by using a spectrum ellipsometer based on the thickness Ht of the mask layer measured in the step S2, and calculating to obtain an evaluation function MSEy of the thickness of the mask layer by a formula;
Step S4, etching the silicon carbide upper dielectric layer containing the mask, measuring the depth Het of the etched step by using a step instrument, measuring the thickness Hey of the etched mask layer by using an ellipsometer, and calculating according to a formula to obtain an evaluation function MSEey of the thickness of the etched mask layer;
step S5, calculating etching selection ratio according to a formula;
the evaluation function MSE has a calculation formula:
;
N=cos(2φ);
C=cos(2φ)cos(Δ);
S=sin(2φ)sin(Δ);
Wherein n is the number of measurement wavelengths, m is the number of fitting parameters, E is the data of measurement points, G is the data of corresponding fitting points, delta and phi are the data detected by a spectrum ellipsometer, delta is the phase change, phi is the amplitude attenuation;
the value of the evaluation function MSE1 of the dielectric film thickness H1 in the step S1 is required to be smaller than 20;
And in the step S3, the mask layer thickness Hy measured by the spectrum ellipsometer and the mask thickness Ht measured by the step instrument satisfy the formula:
|Ht-Hy|/ Ht≤2%,
and the value of the evaluation function of the mask layer thickness Hy is required to be smaller than 20;
the value of the evaluation function MSEey of the etched mask layer thickness Hey measured in the step S4 is required to be smaller than 20;
the etching selection ratio calculation formula is (Het-Hey)/(Hy-Hey).
2. The method for etching selectivity measurement of a silicon carbide dielectric layer according to claim 1, wherein the step S1 comprises the steps of:
S101, selecting a silicon carbide substrate, and growing a dielectric layer on the silicon carbide substrate;
s102, measuring the dielectric film thickness H1 of a dielectric layer by using a spectrum ellipsometer, and obtaining amplitude attenuation phi and phase change delta;
S103, calculating an evaluation function MSE1 of the dielectric film thickness through a formula according to the obtained amplitude attenuation phi and the phase change delta.
3. The method for measuring etching selectivity of a silicon carbide dielectric layer according to claim 1, wherein the measurement angle of the spectroscopic ellipsometer is in a range of 0-90 degrees, and the wavelength is in a range of 190-1040 nm.
4. The method for measuring etching selectivity of a silicon carbide dielectric layer according to claim 1, wherein the measuring length of the step meter is 0-20000 μm, the probe pressure is 0-15 mg, and the measuring time is 0-60 s.
5. The method of claim 4, wherein the step S4 is performed at the same position as the step S3, and the step S4 is performed at the same measurement length, probe pressure, and measurement time as the step S3.
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| CN113281266A (en) * | 2020-02-19 | 2021-08-20 | 神华（北京）光伏科技研发有限公司 | Spectral combined analysis method of film substance and application thereof |
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