CN114300407B - Preparation method of gentle slope-shaped wafer - Google Patents
Preparation method of gentle slope-shaped waferInfo
- Publication number
- CN114300407B CN114300407B CN202111413453.3A CN202111413453A CN114300407B CN 114300407 B CN114300407 B CN 114300407B CN 202111413453 A CN202111413453 A CN 202111413453A CN 114300407 B CN114300407 B CN 114300407B
- Authority
- CN
- China
- Prior art keywords
- wafer
- gently
- preparing
- gentle slope
- polyimide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Drying Of Semiconductors (AREA)
Abstract
本发明提出了一种缓坡状晶圆制备方法，包括：S100，将缓坡状晶圆放置于第一载板的凹槽中，使缓坡状晶圆的背面朝上，完成晶圆背面离子注入及高温回火工艺后，在所述缓坡状晶圆的背面制备金属层；S200，在所述缓坡状晶圆背面制备第一聚亚酰胺层，使所述缓坡状晶圆背面达到预设平整度；S300，翻转所述第一载板，将所述缓坡状晶圆转移至第二载板，使所述缓坡状晶圆的正面朝上；S400，在所述缓坡状晶圆的正面完成晶圆正面金属器件和第二聚亚酰胺层的制备，所述第二聚亚酰胺的镂空区域对应切割道位置；S500，对照所述切割道位置，进行所述缓坡状晶圆的切割。根据本发明提供的缓坡状晶圆制备方法，提高了对缓坡状晶圆进行加工的稳定性和良品率。
The present invention proposes a method for preparing a gently sloping wafer, comprising: S100, placing a gently sloping wafer in a groove of a first carrier plate, with the back of the gently sloping wafer facing upward, completing ion implantation and high-temperature tempering processes on the back of the wafer, and then preparing a metal layer on the back of the gently sloping wafer; S200, preparing a first polyimide layer on the back of the gently sloping wafer, so that the back of the gently sloping wafer reaches a preset flatness; S300, flipping the first carrier plate, transferring the gently sloping wafer to a second carrier plate, with the front of the gently sloping wafer facing upward; S400, completing the preparation of wafer front metal devices and a second polyimide layer on the front of the gently sloping wafer, with the hollowed-out area of the second polyimide corresponding to the cutting path position; S500, cutting the gently sloping wafer according to the cutting path position. The method for preparing a gently sloping wafer provided by the present invention improves the stability and yield rate of processing gently sloping wafers.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a gentle slope wafer preparation method.
Background
In the semiconductor device manufacturing process, in some processes of the wafer manufacturing process, the wafer needs to be ground, so as to reduce the thickness of the wafer to meet the requirements of the subsequent processes, and a common process, such as a tai drum (TAIKO) thinning process, forms a gentle slope edge on one side of the wafer ground, and the wafer is in a state that the center is thinner and the gentle slope edge is thicker.
When the subsequent process is carried out on the gentle slope-shaped wafer manufactured by the thinning process, the opposite surface of the thinned grinding surface cannot be processed, because one surface with the gentle slope-shaped edge needs to be turned downwards, the position of the center of the wafer is in a suspended state due to the existence of the gentle slope-shaped edge of the wafer, and the thickness of the wafer is greatly reduced by the thinning process, so that the probability of cracking at the suspended position of the center of the wafer is greatly increased, and the yield of the wafer is further reduced.
In addition, when a wafer prepared by, for example, a tai-gu (TAIKO) thinning process is processed, problems such as wafer breakage due to stress concentration caused by uneven thickness and center thickness of the wafer at the edge, breakage due to collision between the cut gentle slope edge and the center wafer, and the like occur when cutting the gentle slope edge of the wafer.
Disclosure of Invention
The invention aims to solve the technical problems of improving the strength of a gentle slope-shaped wafer when the gentle slope-shaped wafer is processed without a gentle slope-shaped edge, improving the flatness of the gentle slope-shaped wafer and the stability during processing, and effectively solving the problem of inconvenient cutting of the gentle slope-shaped edge of the wafer.
The preparation method of the gentle slope-shaped wafer provided by the invention comprises the following steps:
S100, placing a gentle slope-shaped wafer in a groove of a first carrier plate, enabling the back surface of the gentle slope-shaped wafer to face upwards, and preparing a metal layer on the back surface of the gentle slope-shaped wafer after the back surface ion implantation and high-temperature tempering process of the wafer are completed;
S200, preparing a first polyimide layer on the back of the gentle slope-shaped wafer, so that the back of the gentle slope-shaped wafer reaches a preset flatness;
S300, turning over the first carrier plate, and transferring the gentle slope-shaped wafer to a second carrier plate so that the right side of the gentle slope-shaped wafer faces upwards;
s400, preparing a metal device and a second polyimide layer on the front surface of the wafer on the front surface of the gentle slope wafer, wherein the hollowed-out area of the second polyimide corresponds to the position of the cutting channel;
s500, cutting the gentle slope-shaped wafer according to the cutting path positions.
According to the preparation method of the gentle slope-shaped wafer, the first polyimide layer is prepared on the back surface of the gentle slope-shaped wafer in advance, so that the flatness of the back surface of the gentle slope-shaped wafer after being overturned is improved, the problem that the center of the gentle slope-shaped wafer is suspended after being overturned is also avoided, the probability of wafer breakage or rupture caused by lower center strength of the gentle slope-shaped wafer is reduced, the flatness of the back surface of the gentle slope-shaped wafer meets the process requirement is improved, and the stability of the wafer during processing of the gentle slope-shaped wafer is improved.
According to some embodiments of the invention, in S100, the implanted ions include boron ions, phosphorus ions and hydrogen ions, and the preset temperature range of the activated ions is 600-1000 ℃.
In some embodiments of the present invention, in S400, a process for manufacturing a metal device on the front surface of the gentle slope wafer includes:
s410, preparing preset arranged metal blocks on the front surface of the gentle slope-shaped wafer;
s420, preparing a second polyimide layer on the front surface of the gentle slope-shaped wafer;
and S430, electroless plating Ni, pd and Au on the metal block.
According to some embodiments of the invention, the S500 includes:
s510, cutting the gentle slope-shaped wafer by using a plasma cutting process according to a selection ratio;
S520, cutting off the metal layer on the back of the gentle slope wafer by using a laser cutting process;
s530, cutting off the first polyimide layer on the back surface of the gentle slope wafer.
According to some embodiments of the invention, the method further comprises:
S600, attaching the front surface of the cut gentle slope wafer to a first cutting die frame;
And S700, removing the first polyimide layer on the back surface of the gentle slope-shaped wafer.
According to some embodiments of the invention, the method further comprises:
S800, attaching the back surface of the gentle slope-shaped wafer from which the first polyimide layer is removed to a second cutting die frame;
S900, removing the first cutting die frame.
According to some embodiments of the invention, in S900, after the first cutting frame is irradiated with UV light for a preset period of time, the first cutting frame is removed.
According to some embodiments of the invention, the first carrier plate and the second carrier plate are both glass carrier plates.
According to some embodiments of the invention, the thickness of the gentle slope wafer ranges from 50 to 200um.
According to some embodiments of the invention, the gentle slope wafer has a size ranging from 6 inches to 12 inches.
Drawings
FIG. 1 is a schematic flow chart of a gentle slope wafer preparation method according to an embodiment of the invention;
Fig. 2 is a schematic structural diagram of a gentle slope wafer manufactured in step S100 of the gentle slope wafer manufacturing method according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a gentle slope wafer manufactured in step S200 of the gentle slope wafer manufacturing method according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a gentle slope wafer manufactured in step S300 of the gentle slope wafer manufacturing method according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a gentle slope wafer manufactured in step S400 of the gentle slope wafer manufacturing method according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a gentle slope wafer manufactured in step S400 of the gentle slope wafer manufacturing method according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of a gentle slope wafer manufactured in step S400 of the gentle slope wafer manufacturing method according to an embodiment of the present invention;
fig. 8 is a schematic structural diagram of a gentle slope wafer manufactured in step S500 of the gentle slope wafer manufacturing method according to an embodiment of the present invention;
Fig. 9 is a schematic structural diagram of a gentle slope wafer manufactured in step S500 of the gentle slope wafer manufacturing method according to an embodiment of the present invention;
Fig. 10 is a schematic structural diagram of a gentle slope wafer before step S600 of the method for manufacturing a gentle slope wafer according to an embodiment of the present invention;
fig. 11 is a schematic structural diagram of a second carrier removed after step S600 of the gentle slope wafer preparation method according to an embodiment of the present invention;
Fig. 12 is a schematic structural diagram of a gentle slope wafer manufactured after step S600 of the gentle slope wafer manufacturing method according to an embodiment of the present invention;
fig. 13 is a schematic structural diagram of a gentle slope wafer manufactured in step S700 of the gentle slope wafer manufacturing method according to an embodiment of the present invention;
fig. 14 is a schematic structural diagram of a gentle slope wafer manufactured in step S800 of the gentle slope wafer manufacturing method according to an embodiment of the present invention;
fig. 15 is a schematic diagram of a structure of a second polyimide layer after etching or plasma ashing after step S600 of the method for preparing a gentle slope wafer according to an embodiment of the present invention.
Reference numerals:
a gentle slope-shaped wafer 1, a metal layer 11, a first polyimide layer 12, a metal device 13, a metal block 131, a second polyimide layer 14,
The first carrier plate 2 is provided with a first opening,
The second carrier plate 3 is provided with a plurality of support plates,
A first cutting die frame 4 is provided with a first cutting die,
And a second cutting die 5.
Detailed Description
In order to further describe the technical means and effects adopted by the present invention for achieving the intended purpose, the following detailed description of the present invention is given with reference to the accompanying drawings and preferred embodiments.
The invention provides a preparation method of a gentle slope wafer, which comprises the following steps:
s100, placing the gentle slope-shaped wafer 1 in a groove of the first carrier plate 2, enabling the back surface of the gentle slope-shaped wafer 1 to face upwards, and preparing a metal layer 11 on the back surface of the gentle slope-shaped wafer 1 after the wafer back surface ion implantation and high-temperature tempering process is completed.
S200, preparing a first polyimide layer 12 on the back surface of the gentle slope-shaped wafer 1, so that the back surface of the gentle slope-shaped wafer 1 reaches a preset flatness.
S300, the first carrier plate 2 is turned over, and the gentle slope-shaped wafer 1 is transferred to the second carrier plate 3, so that the right side of the gentle slope-shaped wafer 1 faces upwards.
S400, completing the preparation of the second polyimide layer from the metal device 13 and the second polyimide layer 14 on the front surface of the gentle slope-shaped wafer 1, wherein the hollowed-out area corresponds to the position of the cutting channel.
S500, cutting the gentle slope-shaped wafer 1 according to the cutting path positions.
According to the preparation method of the gentle slope wafer, the first polyimide layer 12 is prepared in advance on the back surface of the gentle slope wafer 1, so that the flatness of the back surface of the gentle slope wafer 1 after being overturned is improved, the problem that the center of the gentle slope wafer 1 is suspended after being overturned is also avoided, the probability of wafer breakage or rupture caused by lower center strength of the gentle slope wafer 1 is reduced, the flatness of the back surface of the gentle slope wafer 1 meets the process requirement is reduced, and the stability of the wafer when the gentle slope wafer 1 is processed is improved, so that the technical problem that the back surface of the gentle slope wafer 1 cannot be processed in the prior art is solved.
According to some embodiments of the invention, in S100, the implanted ions include boron ions, phosphorus ions and hydrogen ions, and the preset temperature range of the activated ions is 600-1000 ℃.
In some embodiments of the present invention, in S400, the process for manufacturing the metal device 13 on the front surface of the gentle slope wafer 1 includes:
S410, preparing the metal blocks 131 with preset arrangement on the front surface of the gentle slope-shaped wafer 1. Among them, the metal block 131 may be an aluminum block (Al Pad), and the metal block 131 may be prepared through processes such as photolithography, electrochemical deposition, and a growth process.
S420, preparing a second polyimide layer 14 on the front surface of the gentle slope wafer 1.
And S430, electroless plating Ni, pd and Au on the metal block 131.
According to some embodiments of the invention, the S500 includes:
S510, cutting the gentle slope-shaped wafer 1 by using a plasma cutting process according to a selection ratio. The hollowed-out area on the surface of the second polyimide layer 14 corresponds to the dicing channel position, so that a dicing pattern does not need to be prefabricated on the surface of the second polyimide layer 14, and the wafer can be directly diced under the condition that the gentle slope wafer 1 is also provided with the first polyimide layer 12 by utilizing the non-selective ratio of polyimide and the wafer.
S520, cutting off the metal layer 11 on the back of the wafer by using a laser cutting process.
S530, cutting off the first polyimide layer on the back surface of the wafer.
Specifically, as shown in fig. 8 to 9, steps S510 to S530 are performed to cut the gentle slope wafer 1 into dies that are not connected to each other.
According to some embodiments of the invention, the method further comprises:
And S600, attaching the front surface of the cut gentle slope-shaped wafer 1 to the first cutting die frame 4.
And S700, removing the first polyimide layer 12 on the back surface of the gentle slope-shaped wafer 1.
As shown in fig. 8 to 12, since the gentle slope-shaped wafer 1 is fixed on the second carrier plate 3 through the second polyimide layer 14, the gentle slope-shaped edge of the gentle slope-shaped wafer 1 can be cut off without performing additional processing through steps S510 to S530, and remains on the second carrier plate 3 along with the cut second polyimide layer 14, a series of processing on the gentle slope-shaped edge is not required like the conventional too-drum process wafer, and the technical scheme of cutting the gentle slope-shaped edge of the gentle slope-shaped wafer 1 is improved.
In addition, as shown in fig. 15, after step S600, the second polyimide layer 12 thicker at the edge of the gentle slope wafer 1 may be partially or completely removed by UV irradiation, etching or plasma ashing, so that the adhesion of the second polyimide layer 12 thicker at the edge of the gentle slope wafer 1 to the first cutting mold frame 4 may be reduced, which facilitates removal of the second carrier plate 3 after step S600. And due to the thicker second polyimide layer 12 at the edge of the gentle slope wafer 1, the second polyimide layer 12 at the center is also blocked by the thicker second polyimide layer 12 at the far side when passing through the etching or plasma ashing process, thereby protecting the second polyimide layer 12 at the center from etching or plasma ashing.
According to some embodiments of the invention, the method further comprises:
S800, attaching the back surface of the gentle slope wafer 1 from which the first polyimide layer 12 is removed to a second dicing frame 5.
And S900, removing the first cutting die frame 4.
According to some embodiments of the invention, in S900, after the first cutting frame 4 is irradiated with UV light for a preset period of time, the first cutting frame 4 is removed.
According to some embodiments of the invention, the first carrier plate 2 and the second carrier plate 3 are glass carrier plates.
According to some embodiments of the present invention, the thickness of the gentle slope wafer 1 ranges from 50 μm to 200 μm.
According to some embodiments of the invention, the gentle slope wafer 1 has a size ranging from 6 inches to 12 inches.
The steps of the method flow described in the specification and the flow chart shown in the drawings of the specification are not necessarily strictly executed according to step numbers, and the execution order of the steps of the method may be changed. Moreover, some steps may be omitted, multiple steps may be combined into one step to be performed, and/or one step may be decomposed into multiple steps to be performed.
While the invention has been described in connection with specific embodiments thereof, it is to be understood that these drawings are included in the spirit and scope of the invention, it is not to be limited thereto.
Claims (9)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111413453.3A CN114300407B (en) | 2021-11-25 | 2021-11-25 | Preparation method of gentle slope-shaped wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111413453.3A CN114300407B (en) | 2021-11-25 | 2021-11-25 | Preparation method of gentle slope-shaped wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114300407A CN114300407A (en) | 2022-04-08 |
| CN114300407B true CN114300407B (en) | 2025-07-29 |
Family
ID=80966231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111413453.3A Active CN114300407B (en) | 2021-11-25 | 2021-11-25 | Preparation method of gentle slope-shaped wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114300407B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115206788B (en) * | 2022-07-12 | 2025-09-09 | 深圳市尚鼎芯科技股份有限公司 | Wafer preparation method for increasing wafer strength |
| CN115483146B (en) * | 2022-09-06 | 2025-10-03 | 中晟鲲鹏光电半导体有限公司 | IGBT wafer processing technology |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW469608B (en) * | 2000-07-26 | 2001-12-21 | Advanced Chip Eng Tech Inc | Fabrication method for chip scale package using wafer level packaging |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05109679A (en) * | 1991-10-15 | 1993-04-30 | Nec Corp | Manufacture of semiconductor device |
| CN1298046C (en) * | 2002-08-21 | 2007-01-31 | 南茂科技股份有限公司 | Wafer Handling Method for Forming Bond Tack on Die Surface |
| US6940181B2 (en) * | 2003-10-21 | 2005-09-06 | Micron Technology, Inc. | Thinned, strengthened semiconductor substrates and packages including same |
| CN108269741A (en) * | 2018-01-11 | 2018-07-10 | 上海华虹宏力半导体制造有限公司 | Wafer grinding method |
-
2021
- 2021-11-25 CN CN202111413453.3A patent/CN114300407B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW469608B (en) * | 2000-07-26 | 2001-12-21 | Advanced Chip Eng Tech Inc | Fabrication method for chip scale package using wafer level packaging |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114300407A (en) | 2022-04-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN114300407B (en) | Preparation method of gentle slope-shaped wafer | |
| JP4185704B2 (en) | Manufacturing method of semiconductor device | |
| US7989266B2 (en) | Methods for separating individual semiconductor devices from a carrier | |
| CN111799178B (en) | Double-sided copper-plating thick film process for ultrathin wafer | |
| US8507362B2 (en) | Process of forming ultra thin wafers having an edge support ring | |
| US9613840B2 (en) | Apparatus and method for bonding substrates | |
| US12322632B2 (en) | Substrate alignment systems and related methods | |
| CN110931428A (en) | Method for dividing multiple semiconductor tube cores | |
| JP2014053549A (en) | Semiconductor device and semiconductor device manufacturing method | |
| CN114464529A (en) | A kind of preparation method of semiconductor device | |
| US8420505B2 (en) | Process for manufacture of thin wafer | |
| CN111446158B (en) | Metal deposition process after wafer back cutting | |
| US20180019307A1 (en) | Method for manufacturing silicon carbide semiconductor device, method for manufacturing semiconductor base, silicon carbide semiconductor device, and device for manufacturing silicon carbide semiconductor device | |
| US6933212B1 (en) | Apparatus and method for dicing semiconductor wafers | |
| TWI716931B (en) | Taiko wafer ring cut process method | |
| CN111446159A (en) | Production method for cutting front surface and thinning back surface | |
| TW201336041A (en) | Method for three-dimensional packaging of electronic devices | |
| JP2007242699A (en) | Semiconductor device manufacturing method and semiconductor substrate | |
| CN115241048B (en) | Method for manufacturing semiconductor device and semiconductor device | |
| CN113948376A (en) | A kind of preparation method of wafer surface device | |
| CN114464544A (en) | Preparation method of semiconductor device | |
| CN115458399B (en) | A method for splitting silicon carbide wafer | |
| CN110690106A (en) | Preparation method of single crystal diamond chip | |
| CN115424971B (en) | Improved processing technology for manufacturing process of compound semiconductor wafer | |
| CN113948460B (en) | Wafer cutting method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |