CN114337548B - Crystal oscillator circuits, integrated circuits and electronic equipment - Google Patents
Crystal oscillator circuits, integrated circuits and electronic equipment Download PDFInfo
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- CN114337548B CN114337548B CN202111678523.8A CN202111678523A CN114337548B CN 114337548 B CN114337548 B CN 114337548B CN 202111678523 A CN202111678523 A CN 202111678523A CN 114337548 B CN114337548 B CN 114337548B
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- 239000013078 crystal Substances 0.000 title claims abstract description 65
- 230000010355 oscillation Effects 0.000 claims abstract description 191
- 230000001105 regulatory effect Effects 0.000 claims abstract description 40
- 239000010453 quartz Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000003990 capacitor Substances 0.000 claims description 10
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- 230000001276 controlling effect Effects 0.000 description 3
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- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
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Abstract
本申请公开了一种晶体振荡电路、集成电路及电子设备，包括振荡模块，用于产生第一振荡信号与第二振荡信号，并输出至整流模块；参考振荡模块，用于产生参考共模信号，并输出至整流模块；整流模块，用于根据参考共模信号和振荡信号分别产生参考电压信号和整流信号，并输出至调节模块；调节模块，用于根据参考电压信号和整流信号产生调节电压信号控制调节电流并输出调节电流至振荡模块以控制第一振荡信号和第二振荡信号的振幅；还包括偏置模块，用于为振荡模块与参考振荡模块提供工作条件。降低了晶体振荡电路振荡过程的功耗，减小了电路面积，实现了在宽电压和集成电路工艺发生变化时精确控制晶体振荡电路的振荡幅度。
The present application discloses a crystal oscillator circuit, an integrated circuit and an electronic device, including an oscillation module for generating a first oscillation signal and a second oscillation signal and outputting them to a rectifier module; a reference oscillation module for generating a reference common-mode signal and outputting them to a rectifier module; a rectifier module for generating a reference voltage signal and a rectifier signal according to the reference common-mode signal and the oscillation signal, respectively, and outputting them to a regulating module; a regulating module for generating a regulating voltage signal according to the reference voltage signal and the rectifier signal to control a regulating current and outputting the regulating current to the oscillation module to control the amplitude of the first oscillation signal and the second oscillation signal; and also including a bias module for providing working conditions for the oscillation module and the reference oscillation module. The power consumption of the crystal oscillation circuit during the oscillation process is reduced, the circuit area is reduced, and the oscillation amplitude of the crystal oscillation circuit is precisely controlled when the wide voltage and integrated circuit process change.
Description
Technical Field
The present invention relates to the field of electronic circuits, and more particularly, to a crystal oscillating circuit, an integrated circuit, and an electronic device.
Background
In ultra-high precision integrated circuit products such as RTC timing and gigabit ethernet communication products, it has been difficult to meet the application requirements of these products, and in order to meet the application requirements, a crystal oscillating circuit is generally used to generate a clock with stable frequency, and the crystal oscillating circuit is composed of an off-chip quartz crystal and an on-chip integrated circuit, where the quartz crystal is a passive element, and energy loss is generated during the oscillation process, so that the circuit is required to provide energy to maintain the oscillation state of the quartz crystal.
In different integrated circuit processes, the currents of the crystal oscillation circuits are also respectively different, the energy loss of the quartz crystal with the same resonant frequency is also different, in order to make the crystal oscillator work normally, the current must meet the worst working condition of the crystal oscillation circuit, but when the working condition of the current is too bad, the power consumption is large, in the prior art, when the wide voltage range is different or the process of an integrated circuit is different, the control effect of the oscillation amplitude and the power consumption is poor.
Disclosure of Invention
In view of the above, the present invention provides a crystal oscillating circuit, an integrated circuit and an electronic device, so as to solve the above technical problems.
The technical scheme of the invention is as follows:
Provided is a crystal oscillation circuit including:
The oscillation module is used for generating a first oscillation signal and a second oscillation signal and outputting the first oscillation signal and the second oscillation signal to the rectification module;
the reference oscillation module is used for generating a reference common mode signal according to the common mode signals of the first oscillation signal and the second oscillation signal and outputting the reference common mode signal to the rectification module;
The rectification module is used for generating a reference voltage signal according to the reference common mode signal, generating a rectification signal according to the first oscillation signal and the second oscillation signal, and outputting the reference voltage signal and the rectification signal to the regulation module;
The adjusting module is used for outputting an adjusting control signal to the oscillating module according to the reference voltage signal and the rectification signal so as to control the amplitudes of the first oscillating signal and the second oscillating signal.
In some examples, the regulation control signal is a regulation current, and the regulation module is configured to generate a regulation voltage signal based on the reference voltage signal and the rectified signal and to generate a regulation current based on the regulation voltage signal.
In some embodiments, the rectification module includes:
The first rectifying circuit is used for generating a reference voltage signal according to the reference common mode signal and outputting the reference voltage signal to the regulating module;
The second rectifying circuit is used for generating a rectifying signal according to the first oscillating signal and the second oscillating signal and outputting the rectifying signal to the regulating module.
In some embodiments, the oscillating module includes a second transistor, a third transistor, a first impedance unit;
the first electrode of the second transistor is used for being connected with a power supply, the second electrode of the second transistor is connected with the adjusting module, and the third electrode of the second transistor is used for being connected with the biasing module;
the first electrode of the third transistor is grounded, the second electrode of the third transistor is connected with the first end of the first impedance unit, the second electrode of the second transistor and the second rectifying circuit, and the third electrode of the third transistor is connected with the second end of the first impedance unit and the second rectifying circuit;
the third electrode of the third transistor is further used for being grounded through the first load capacitor, the second electrode of the third transistor is further used for being grounded through the second load capacitor, and the first impedance unit is further used for being connected with the quartz crystal in parallel.
In some embodiments, the reference oscillation module includes a fourth transistor, a fifth transistor, and a second impedance unit;
The first electrode of the fourth transistor is used for being connected with a power supply, the second electrode of the fourth transistor is connected with the first end of the second impedance unit, and the third electrode of the fourth transistor is used for being connected with the bias module;
The first electrode of the fifth transistor is grounded, the second electrode of the fifth transistor is connected with the second end of the second impedance unit, and the third electrode of the fifth transistor is connected with the first end of the second impedance unit and is connected with the first rectifying circuit. In some embodiments, the crystal oscillation circuit further comprises a bias module comprising a first transistor and a first current source module;
the first pole of the first transistor is used for connecting with a power supply, the second pole of the first transistor is connected with the first end of the first current source module, and the third pole of the first transistor is connected with the second pole of the first transistor and is connected with the oscillating module and the reference oscillating module;
the second end of the first current source module is grounded.
In some embodiments, the first rectifying circuit includes a sixth transistor, a seventh transistor, a second current source module, and a reference voltage setting module;
The third electrode of the sixth transistor and the third electrode of the seventh transistor are respectively connected with the output end of the reference oscillation module so as to receive the reference common-mode signal;
the second pole of the sixth transistor and the second pole of the seventh transistor are respectively used for being connected with a power supply, and the first pole of the sixth transistor and the first pole of the seventh transistor are respectively connected with the first input end of the regulating module and output a reference voltage signal to the regulating module;
The first end of the second current source module is connected with the first input end of the adjusting module, and the second end of the second current source module is grounded;
the first end of the reference voltage setting module is connected with the first input end of the adjusting module, and the second end of the reference voltage setting module is grounded.
In some embodiments, the second rectifying circuit includes an eighth transistor, a ninth transistor, a third current source module, and a filter circuit module;
The third electrode of the eighth transistor is connected with the first output end of the oscillating module to receive the first oscillating signal, the second electrode of the eighth transistor is used for being connected with a power supply, and the first electrode of the eighth transistor is connected with the first end of the filter circuit module;
The third electrode of the ninth transistor is connected with the second output end of the oscillating module to receive a second oscillating signal, the second electrode of the ninth transistor is used for being connected with a power supply, and the first electrode of the ninth transistor is connected with the first end of the filter circuit module;
the first end of the third current source module is connected with the first end of the filter circuit module, and the second end of the third current source module is grounded;
the second end of the filter circuit module is connected with the second input end of the adjusting module, and the third end of the filter circuit module is grounded.
In some embodiments, the regulation module includes an amplifier unit, a tenth transistor;
The first input end of the amplifier unit is connected with the first rectifying circuit, the second input end of the amplifier unit is connected with the second rectifying circuit, and the output end of the amplifier unit is connected with the third pole of the tenth transistor;
The first pole of the tenth transistor is used for connecting a power supply, and the second pole of the tenth transistor is connected with the oscillating module.
The other technical scheme of the invention is as follows:
there is provided an integrated circuit comprising a crystal oscillating circuit as claimed in any one of the preceding claims.
The other technical scheme of the invention is as follows:
there is provided an electronic device comprising a device body and an integrated circuit as described above disposed within the device body.
The invention provides a crystal oscillation circuit, an integrated circuit and electronic equipment, wherein a bias module of the crystal oscillation circuit provides working conditions for an oscillation module and a reference oscillation module of the crystal oscillation circuit, the oscillation module generates a first oscillation signal and a second oscillation signal and outputs the first oscillation signal and the second oscillation signal to a second rectification circuit, the second rectification circuit generates a rectification signal according to the input oscillation signal and outputs the rectification signal to a second input end of a regulating module, the reference oscillation module generates a reference voltage signal according to the reference common mode signal and outputs the reference common mode signal to a first input end of the regulating module, the regulating module generates a regulating voltage signal according to the input reference voltage signal and the rectification signal to control a regulating current signal, and the amplitude of the first oscillation signal and the amplitude of the second oscillation signal generated by the oscillation module are controlled according to the change of the regulating current signal. The circuit has the advantages of simple structural design, small circuit area and low power consumption in the oscillation process of the crystal oscillator.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a block diagram of a crystal oscillating circuit according to an embodiment of the present invention;
FIG. 2 is a block diagram of a rectifier module provided according to an embodiment of the present invention;
fig. 3 is a schematic circuit diagram of a crystal oscillating circuit according to an embodiment of the present invention;
Fig. 4 is a schematic structural diagram of a first rectifying circuit according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a second rectifying circuit according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of an integrated circuit according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of an electronic device according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It should be understood that the described embodiments are merely some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, in the description of the embodiments, suffixes of "module" and "unit" are used for facilitating the description of the present application, and have no specific meaning, and "connection" in the present embodiment refers to electrical connection, and may be a direct connection relationship or an indirect connection relationship.
The embodiment of the application provides a crystal oscillation circuit, an integrated circuit and electronic equipment, wherein the crystal oscillation circuit comprises an oscillation module, a reference oscillation module, a rectification module and an adjustment module, wherein the oscillation module is used for generating a first oscillation signal and a second oscillation signal and outputting the first oscillation signal and the second oscillation signal to the rectification module, the reference oscillation module is used for generating a reference common mode signal and outputting the reference common mode signal to the rectification module, the rectification module is used for generating a reference voltage signal according to the reference common mode signal and outputting the first oscillation signal and the second oscillation signal to the rectification module according to the oscillation module, the rectification module is used for outputting the reference voltage signal and the rectification signal to the adjustment module, the adjustment module is used for generating an adjustment voltage signal according to the reference voltage signal and the rectification signal which are input by the rectification module, and controlling an adjustment current according to the adjustment voltage signal, and outputting the adjustment current to the oscillation module so as to control the amplitudes of the first oscillation signal and the second oscillation signal which are generated by the oscillation module, and the crystal oscillation circuit further comprises a bias module which is used for enabling the oscillation module and the reference oscillation module to work normally. The circuit structure provided by the embodiment of the application can detect the oscillation amplitude of the crystal oscillator and control the generated oscillation signal of the crystal oscillator according to the oscillation amplitude, thereby realizing the accurate control of the oscillation amplitude of the crystal oscillator under a wide voltage range and when the integrated circuit process is changed. The circuit has the advantages of simple structural design, small circuit area and low power consumption in the oscillation process of the crystal oscillation circuit.
As shown in fig. 1, an embodiment of the application provides a crystal oscillating circuit 100, where the crystal oscillating circuit 100 includes a bias module 110, an oscillating module 120, a reference oscillating module 130, a rectifying module 140 and a regulating module 150, where the bias module 110 is configured to make the oscillating module 120 and the reference oscillating module 130 work normally, the oscillating module 120 generates a first oscillating signal and a second oscillating signal to output to the rectifying module 140, the reference oscillating module 130 generates a reference common mode signal to output to the rectifying module 140, the rectifying module 140 generates a reference voltage signal according to the reference common mode signal, generates a rectifying signal according to the first oscillating signal and the second oscillating signal, outputs the reference voltage signal and the rectifying signal to the regulating module 150, and the regulating module 150 generates a regulating voltage signal according to the reference voltage signal and the rectifying signal, controls a regulating current according to the regulating voltage signal and outputs the regulating current to the oscillating module 120 to control the first oscillating signal and the second oscillating signal generated by the oscillating module 120.
Alternatively, the rectifying module 140 includes a first rectifying circuit 141 and a second rectifying circuit 142, the first rectifying circuit 141 generates a reference voltage signal according to a reference common mode signal input by a reference oscillation signal and outputs the reference voltage signal to the adjusting module 150, and the second rectifying circuit 142 generates a rectifying signal according to the input first oscillation signal and second oscillation signal and outputs the rectifying signal to the adjusting module 150.
In the circuit structure of this embodiment, the bias module 110 includes a first transistor and a first current source module, where a first pole of the first transistor is used for connecting to the power supply VDD, a second pole of the first transistor is connected to the first end Ib1 of the first current source module, a third pole of the first transistor is connected to the second pole of the first transistor and to the third pole of the second transistor of the oscillation module 120 and to the third pole of the fourth transistor of the reference oscillation module 130, and a second end Ib2 of the first current source module is grounded.
As an implementation manner of this embodiment, as shown in the circuit structure schematic diagram of fig. 3, the bias module 110 includes a first MOS transistor MP0 and a first current source module, where a source of the first MOS transistor MP0 is connected to the power supply VDD, a drain of the first MOS transistor MP0 is connected to the first end Ib1 of the first current source module, a gate of the first MOS transistor MP0 is connected to a drain thereof and is connected to a gate of the second MOS transistor MP1 of the oscillation module 120 and a gate of the fourth MOS transistor MP1' of the reference oscillation module 130, and a second end Ib2 of the first current source module is grounded.
Specifically, the bias module 110 is connected to the oscillation module 120 and the reference oscillation module 130, respectively, and the first current source module of the bias module 110 is generated from a bandgap reference circuit, which is a circuit structure commonly used in bias circuits and is not described herein. The first MOS transistor MP0, the second MOS transistor MP1, and the fourth MOS transistor MP1 'together form a current mirror, so that the second MOS transistor MP1 and the fourth MOS transistor MP1' can mirror the current of the first MOS transistor MP0, thereby providing bias currents for the reference oscillation module 130 and the oscillation module 120. Specifically, the first current source module provides bias voltages for the gate and the source of the first MOS transistor, the voltage signals affect the voltage signals between the gate and the source of the second MOS transistor MP1 of the oscillation module 120 and the gate and the source of the fourth MOS transistor of the reference oscillation module 130, and the voltage signals between the gate and the source are proportional to the bias voltage signals based on the sizes of the first MOS transistor MP0, the second MOS transistor MP1 and the fourth MOS transistor MP1', so that the currents of the second MOS transistor MP1 and the fourth MOS transistor MP1' are proportional to the current of the first MOS transistor MP 0. The dimension parameters refer to the channel width and the channel length of the MOS tube. When the dimensions of the second MOS transistor MP1 and the fourth MOS transistor MP1 'are the same as those of the first MOS transistor MP0, the currents of the second MOS transistor MP1 and the fourth MOS transistor MP1' are the same as those of the first MOS transistor MP 0.
In the circuit structure of this embodiment, the oscillation module 120 includes a second transistor, a third transistor, and a first impedance unit R, where a first pole of the second transistor is used for being connected to the power supply VDD, a second pole of the second transistor is connected to the adjustment module 150, a third pole of the second transistor is connected to the bias module 110, the first pole of the third transistor is grounded, a second pole of the third transistor is connected to a first end of the first impedance unit R, a second pole of the second transistor and the second rectification circuit 142Rec2, a third pole of the third transistor is connected to a second end of the first impedance unit R and the second rectification circuit 142Rec2, a third pole of the third transistor is further used for being grounded through the first load capacitor C1, a second pole of the third transistor is further used for being grounded through the second load capacitor C2, and the first impedance unit R is further used for being connected in parallel to the quartz crystal XC.
As a schematic circuit diagram of the embodiment, as shown in fig. 3, the local oscillator module 120 includes a second MOS tube MP1, a third MOS tube MN0, and a first impedance unit R, where a source of the second MOS tube MP1 is used for connecting to a power supply VDD, a gate of the second MOS tube MP1 is used for connecting to a gate of the first MOS tube MP0 of the bias module 110, a drain of the second MOS tube MP1 is connected to a drain of a tenth MOS tube of the adjustment module 150, a source of the third MOS tube MN0 is grounded, a drain of the third MOS tube MN0 is connected to a first end of the first impedance unit R, the second rectification circuit 142Rec2, a gate of the third MOS tube MN0 is connected to a second end of the first impedance unit R, and the second rectification circuit 142Rec2, and a gate of the third MOS tube MN0 is also used for being grounded through the first load capacitor C1, and a drain of the third MOS tube MN0 is also used for being grounded through the second load capacitor C2, and the first impedance unit R is also used for being connected in parallel to the quartz crystal XC.
Specifically, in the oscillation module 120, the quartz crystal XC generates an oscillation signal, generates a first oscillation signal xi and a second oscillation signal xo, and outputs the generated first oscillation signal xi and second oscillation signal xo to the second rectifying circuit 142Rec2, which is further configured to supply energy to the quartz crystal XC to maintain an oscillation state of the quartz crystal XC in order to compensate for energy loss of the quartz crystal.
In the circuit structure of this embodiment, the reference oscillating module 130 includes a fourth transistor, a fifth transistor and a second impedance unit, where a first pole of the fourth transistor is connected to the power supply VDD, a third pole of the fourth transistor is connected to a third pole of the first transistor, a second pole of the fourth transistor is connected to a first end of the second impedance unit R', a first pole of the fifth transistor is grounded, a second pole of the fifth transistor is connected to a second end of the second impedance unit, and a third pole of the fifth transistor is connected to a first end of the second impedance unit and is connected to the first rectifying circuit 141Rec1.
As an implementation manner of this embodiment, as shown in the circuit structure schematic diagram of fig. 3, the reference oscillation module 130 includes a fourth MOS transistor MP1', a fifth MOS transistor MN0', and a second impedance unit R ', where a source of the fourth MOS transistor MP1' is connected to the power supply VDD, a gate of the fourth MOS transistor MP1 'is connected to the gate of the first MOS transistor MP1, a drain of the fourth MOS transistor MP1' is connected to the first end of the second impedance unit R ', a source of the fifth MOS transistor MN0' is grounded, a drain of the fifth MOS transistor MN0 'is connected to the second end of the second impedance unit, and a gate of the fifth MOS transistor MN0' is connected to the first end of the second impedance unit and is connected to the first rectifying circuit 141Rec1.
Specifically, the fourth MOS transistor MP1' and the fifth MOS transistor MN0' of the reference oscillation module 130 are respectively proportional to the dimensions of the second MOS transistor MP1 and the third MOS transistor MN0 of the oscillation module 120, the dimensional parameters refer to the channel width and the channel length of the MOS transistors, and the second impedance unit R ' of the reference oscillation circuit is proportional to the first impedance unit R of the oscillation module 120, that is, compared with the oscillation module 120, the reference oscillation module 130 only lacks the off-chip quartz crystal XC, the first load capacitor C1, the second load capacitor C2, and the first oscillation signal xi and the second oscillation signal xo generated by the oscillation module 120 are approximately differential signals. Setting the MOS transistor size and the impedance unit in the embodiment in equal proportion, the common mode of the first oscillation signal xi and the second oscillation signal xo, which are initially generated by the oscillation module 120, is approximately equal to the reference common mode signal VRB of the output of the reference oscillation signal, if the MOS transistor size and the impedance unit in the embodiment are set in other proportions, the common mode of the first oscillation signal xi and the second oscillation signal xo, which are initially generated by the oscillation module 120, is proportional to the reference common mode signal VRB of the output of the reference oscillation signal, that is, in the embodiment, the reference common mode signal output by the reference oscillation module can be controlled through artificial operation.
In the circuit structure of this embodiment, the first rectifying circuit 141Rec1 includes a sixth transistor, a seventh transistor, a second current source module and a reference voltage setting module ISET, wherein a third electrode of the sixth transistor is connected to a third electrode of the fifth transistor and is connected to a third electrode of the seventh transistor, a second electrode of the sixth transistor is connected to the power supply VDD, a first electrode of the sixth transistor is connected to the first input terminal V1 of the amplifier unit of the regulation module 150, a third electrode of the seventh transistor is connected to the third electrode of the sixth transistor, a second electrode of the seventh transistor is connected to the power supply VDD, a first electrode of the seventh transistor is connected to the first input terminal V1 of the amplifier unit of the regulation module 150, a first end Ic1 'of the second current source module is connected to the first input terminal V1 of the regulation module 150, a second end Ic2' of the second current source module is grounded, and a first end ISET1 of the reference voltage setting module ISET is connected to the first input terminal V1 of the amplifier unit of the regulation module 150 and a second end ISET2 of the reference voltage setting module is grounded.
As an implementation manner of this embodiment, as shown in the circuit structure schematic diagram of fig. 4, the first rectifying circuit 141Rec1 includes a sixth MOS transistor MN1', a seventh MOS transistor MN2', a second current source module, and a reference voltage setting module ISET, where a gate of the sixth MOS transistor MN1 'is connected to a gate of the fifth MOS transistor MN0' and to a gate of the seventh MOS transistor MN2', a drain of the sixth MOS transistor MN1' is connected to the power supply VDD, a source of the sixth MOS transistor MN1 'is connected to a first input terminal V1 of the amplifier unit of the regulation module 150, a gate of the seventh MOS transistor MN2' is connected to a gate of the sixth MOS transistor MN1', a drain of the seventh MOS transistor MN2' is connected to the power supply VDD, a source of the seventh MOS transistor MN2 'is connected to a first input terminal V1 of the amplifier unit of the regulation module 150, a second terminal Ic2' of the second current source module is grounded, and a first terminal ISET1 of the reference voltage setting module ISET is connected to the first input terminal V1 of the amplifier unit of the regulation module 150.
Specifically, the reference common mode signal VRB is input to the gate of the sixth MOS transistor MN1', and is output from the source of the sixth MOS transistor MN1', and the first rectifying circuit 141Rec1 has a reference voltage setting module ISET therein for setting the value of the input reference common mode signal VRB, generating the reference voltage VREF, and then outputting the reference voltage VREF to the first input terminal V1 of the amplifier unit of the adjusting module 150.
In the circuit structure of the embodiment, the second rectifying circuit 142 includes an eighth transistor, a ninth transistor, a third current source module and a filter circuit module, where a gate of the eighth transistor is connected to a gate of the third transistor of the oscillating module 120, a drain of the eighth transistor is connected to the power supply VDD, a source of the eighth transistor is connected to the first end Rc1 of the filter circuit module, a gate of the ninth transistor is connected to a drain of the third transistor, a drain of the ninth transistor is connected to the power supply VDD, a source of the ninth transistor is connected to the first end Rc1 of the filter circuit module, a first end Ic1 of the third current source module is connected to the first end Rc1 of the filter circuit module, a second end Ic2 of the third current source module is grounded, a second end Rc2 of the filter circuit module is connected to the second input end V2 of the adjusting module 150, and a third end Rc3 of the filter circuit is grounded.
As a schematic circuit diagram of the embodiment, as shown in fig. 5, the second rectifying circuit 142 includes an eighth MOS transistor MN1, a ninth MOS transistor MN2, a third current source module, and a filter circuit module, where a gate of the eighth MOS transistor MN1 is connected to a gate of the third MOS transistor MN0 of the oscillating module 120, a drain of the eighth MOS transistor MN1 is connected to the power supply VDD, a source of the eighth MOS transistor MN1 is connected to the first end Rc1 of the filter circuit module, a gate of the ninth MOS transistor MN2 is connected to the drain of the third MOS transistor MN0, a drain of the ninth MOS transistor MN2 is connected to the power supply VDD, a source of the ninth MOS transistor MN2 is connected to the first end Rc1 of the filter circuit module, a first end Ic1 of the third current source module is connected to the first end Rc1 of the filter circuit module, a second end Ic2 of the third current source module is grounded, and a second end Rc2 of the filter circuit module is connected to the second input end V2 of the regulating module 150.
Specifically, the first oscillation signal xi generated by the oscillation module 120 is input to the gate of the eighth MOS transistor MN1, the second oscillation signal xo generated by the oscillation module 120 is input to the gate of the ninth MOS transistor MN2, and the two input oscillation signals xi and xo are extracted as the rectification signals VCM and output to the second input terminal V2 of the amplifier unit of the adjustment module 150 through the RC filter circuit in the filter circuit module.
In the circuit structure of this embodiment, the adjusting module 150 includes an amplifier unit and a tenth transistor, wherein a first input terminal V1 of the amplifier unit is connected to the first rectifying circuit 141, a second input terminal V2 of the amplifier unit is connected to the second rectifying circuit 142, an output terminal V3 of the amplifier unit is connected to a third pole of the tenth transistor, a first pole of the tenth transistor is connected to the power supply VDD, and a second pole of the tenth transistor is connected to a second pole of the second transistor.
The adjusting module 150 includes an amplifier unit and a tenth MOS tube MP2, wherein a first input end V1 of the amplifier unit is connected to the first rectifying circuit 141, a second input end V2 of the amplifier unit is connected to the second rectifying circuit 142, an output end V3 of the amplifier unit is connected to a gate of the tenth MOS tube MP2, a source of the tenth MOS tube MP2 is connected to the power supply VDD, and a drain of the tenth MOS tube MP2 is connected to a drain of the second MOS tube MP 1.
Specifically, the reference voltage signal VREF output by the first rectifying circuit 141 is input to the first input terminal V1 of the amplifier unit, the rectifying signal VCM output by the second rectifying circuit 142 is input to the second input terminal V2 of the amplifier unit, the difference between the reference voltage signal VREF and the rectifying signal VCM is amplified by the amplifier unit to generate an adjustment voltage signal, the adjustment voltage signal changes along with the change of the difference between the reference voltage signal VREF and the rectifying signal VCM, the adjustment current of the adjustment module 150 changes along with the change of the difference between the reference voltage signal VREF and the rectifying signal VCM, the changed adjustment current is input to the second MOS tube MP2 of the oscillation module 120 through the tenth MOS tube MP1, and the oscillation signals xi and xo generated by the oscillation module 120 are controlled.
In another embodiment, the difference between the reference voltage signal VREF and the rectified signal VCM is approximately equal, and the regulated current of the regulating module 150 is hardly changed, and the generated oscillating signal of the oscillating module 120 maintains a fixed amplitude.
As an implementation manner of this embodiment, as shown in the circuit structure schematic diagram of fig. 3, the first MOS transistor MP0, the second MOS transistor MP1, the fourth MOS transistor MP1', and the tenth MOS transistor MP2 are all P-channel MOS transistors, and the third MOS transistor MN0, the fifth MOS transistor MN0', the sixth MOS transistor MN1', the seventh MOS transistor MN2', and the eighth MOS transistor MN1 and the ninth MOS transistor MN2 are all N-channel MOS transistors.
It should be understood that each transistor in this embodiment may be a MOS transistor or a triode. When the MOS transistor is adopted, the first pole and the second pole of the transistor are the source electrode or the drain electrode, and the third pole is the grid electrode, and when the triode is adopted, the first pole and the second pole of the transistor are the emitting electrode or the collecting electrode, and the third pole is the base electrode.
In addition, when the MOS transistors are adopted, the channel types of the MOS transistors are only examples, in practical application, the channel types of the MOS transistors are selected based on the problems of circuit design cost, design complexity and the like, the channel types of the MOS transistors in the circuit can be actually changed according to the characteristics and the relevance of the P-type MOS transistor and the N-type MOS transistor, besides, the MOS transistors replace the position of the transistor in the integrated circuit, the MOS transistors and the transistor have a certain commonality, namely, the transistor can be used for replacing the MOS transistor in the circuit by adjusting the circuit structure, and in the same way, each impedance unit in the embodiment takes one resistance element as an example, but in the practical application, each impedance unit can also be formed by a plurality of resistance elements in series-parallel connection, and the amplifier unit in the embodiment also comprises an amplifier device with a function of comparing two or more signals, such as a differential amplifier.
As shown in fig. 6, an embodiment of the present application further provides an integrated circuit 200, where the integrated circuit 200 includes the crystal oscillating circuit described above.
The integrated circuit comprises an oscillation module, a reference oscillation module, a rectification module and an adjustment module, wherein the oscillation module is used for generating a first oscillation signal and a second oscillation signal and outputting the first oscillation signal and the second oscillation signal to the rectification module, the reference oscillation module is used for generating a reference common mode signal and outputting the reference common mode signal to the rectification module, the rectification module is used for generating a reference voltage signal according to the reference common mode signal of the reference oscillation signal and inputting the first oscillation signal and the second oscillation signal to the rectification module and outputting the reference voltage signal and the rectification signal to the adjustment module, the adjustment module is used for generating an adjustment voltage signal according to the reference voltage signal and the rectification signal input by the rectification module and controlling adjustment current according to the adjustment voltage signal and outputting the adjustment current to the oscillation module so as to control the amplitudes of the first oscillation signal and the second oscillation signal generated by the oscillation module, and the crystal oscillation circuit further comprises a bias module used for enabling the oscillation module and the reference oscillation module to work normally. The circuit structure provided by the embodiment of the application can detect the oscillation amplitude of the crystal oscillator and control the generated oscillation signal of the crystal oscillator according to the oscillation amplitude, thereby realizing the accurate control of the oscillation amplitude of the crystal oscillator under a wide voltage range and when the integrated circuit process is changed. The circuit has the advantages of simple structural design, small circuit area and low power consumption in the oscillation process of the crystal oscillation circuit.
As shown in fig. 7, an embodiment of the present application further provides an electronic device 300, where the electronic device 300 includes a device main body 310 and the integrated circuit 200 described above. Wherein the integrated circuit 200 is disposed in the device body 300.
The embodiment of the application provides electronic equipment, which comprises an oscillation module, a reference oscillation module, a rectification module and an adjustment module, wherein the oscillation module is used for generating a first oscillation signal and a second oscillation signal and outputting the first oscillation signal and the second oscillation signal to the rectification module, the reference oscillation module is used for generating a reference common mode signal and outputting the reference common mode signal to the rectification module, the rectification module is used for generating a reference voltage signal according to the reference oscillation signal and outputting the rectification signal according to the first oscillation signal and the second oscillation signal input by the oscillation module and outputting the reference voltage signal and the rectification signal to the adjustment module, the adjustment module is used for generating an adjustment voltage signal according to the reference voltage signal and the rectification signal input by the rectification module and controlling adjustment current according to the adjustment voltage signal, and the crystal oscillation circuit also comprises a bias module used for enabling the oscillation module and the reference oscillation module to work normally. The circuit structure provided by the embodiment of the application can detect the oscillation amplitude of the crystal oscillator and control the generated oscillation signal of the crystal oscillator according to the oscillation amplitude, thereby realizing the accurate control of the oscillation amplitude of the crystal oscillator under a wide voltage range and when the integrated circuit process is changed. The circuit has the advantages of simple structural design, small circuit area and low power consumption in the oscillation process of the crystal oscillation circuit.
The foregoing is a further detailed description of the invention in connection with specific embodiments, and is not intended to limit the practice of the invention to such description. It will be apparent to those skilled in the art that several simple deductions or substitutions can be made without departing from the spirit of the invention, and the scope of the invention is to be considered as the scope of the invention.
Claims (11)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111678523.8A CN114337548B (en) | 2021-12-31 | 2021-12-31 | Crystal oscillator circuits, integrated circuits and electronic equipment |
| PCT/CN2022/127024 WO2023124456A1 (en) | 2021-12-31 | 2022-10-24 | Crystal oscillation circuit, integrated circuit and electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202111678523.8A CN114337548B (en) | 2021-12-31 | 2021-12-31 | Crystal oscillator circuits, integrated circuits and electronic equipment |
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| CN114337548A CN114337548A (en) | 2022-04-12 |
| CN114337548B true CN114337548B (en) | 2025-01-21 |
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| CN114337548B (en) * | 2021-12-31 | 2025-01-21 | 合肥市芯海电子科技有限公司 | Crystal oscillator circuits, integrated circuits and electronic equipment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111478686A (en) * | 2019-01-23 | 2020-07-31 | 意法半导体国际有限公司 | Low power crystal oscillator |
| CN113612446A (en) * | 2021-10-09 | 2021-11-05 | 深圳市英特瑞半导体科技有限公司 | Self-adaptive amplitude adjustment oscillating circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2840131B1 (en) * | 2002-05-24 | 2005-04-01 | St Microelectronics Sa | AMPLITUDE CONTROL DEVICE FOR ELECTRIC OSCILLATOR AND ELECTRIC OSCILLATOR COMPRISING SUCH A DEVICE |
| US7187245B1 (en) * | 2003-09-25 | 2007-03-06 | Cypress Semiconductor Corporation | Amplitude control for crystal oscillator |
| EP1638203A1 (en) * | 2004-09-21 | 2006-03-22 | Dialog Semiconductor GmbH | Oscillator with controlled duty cycle |
| US8289090B2 (en) * | 2010-09-21 | 2012-10-16 | Qualcomm Incorporated | Amplitude control for oscillator |
| CN103973222B (en) * | 2013-01-31 | 2016-12-28 | 立锜科技股份有限公司 | Voltage controlled oscillator circuit and related bias circuit |
| WO2019169617A1 (en) * | 2018-03-09 | 2019-09-12 | 深圳市汇顶科技股份有限公司 | Crystal oscillator |
| CN112260665B (en) * | 2020-11-16 | 2025-02-28 | 北京集创北方科技股份有限公司 | Oscillating device, oscillator and electronic device |
| CN113839649B (en) * | 2021-09-16 | 2023-11-21 | 英韧科技(上海)有限公司 | Relaxation oscillator, integrated circuit and electronic device |
| CN114337548B (en) * | 2021-12-31 | 2025-01-21 | 合肥市芯海电子科技有限公司 | Crystal oscillator circuits, integrated circuits and electronic equipment |
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- 2021-12-31 CN CN202111678523.8A patent/CN114337548B/en active Active
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111478686A (en) * | 2019-01-23 | 2020-07-31 | 意法半导体国际有限公司 | Low power crystal oscillator |
| CN113612446A (en) * | 2021-10-09 | 2021-11-05 | 深圳市英特瑞半导体科技有限公司 | Self-adaptive amplitude adjustment oscillating circuit |
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| WO2023124456A1 (en) | 2023-07-06 |
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