CN114369806B - A method to achieve near-zero running-in ultra-low friction - Google Patents

Abstract

The application discloses a method for realizing near zero running-in ultralow friction, which comprises the following steps: depositing a carbon film on a conductive silicon wafer to obtain a silicon-doped graphene nanocrystalline carbon film; disposing the silicon-doped graphene nanocrystalline carbon film on an insulating substrate; a metal friction piece is arranged above the insulating substrate and opposite to the silicon-doped graphene nanocrystalline carbon film; applying a direct current electric field between the silicon-doped graphene nanocrystalline carbon film and the metal friction piece; simultaneously, applying a normal load on the silicon-doped graphene nanocrystalline carbon film; and enabling the metal friction piece to be in contact with the silicon-doped graphene nanocrystalline carbon film and carrying out a current-carrying friction test in an atmospheric environment. According to the application, the transfer film is rapidly formed on the metal friction piece by preparing the silicon-doped graphene nanocrystalline carbon film and applying an external electric field in the friction process, so that near zero running-in is induced, and the ultralow friction state of the carbon film can be rapidly realized in the atmospheric environment.

Description

A method to achieve near-zero running-in ultra-low friction

technical field

The invention relates to the technical field of solid lubrication, in particular to a method for realizing near-zero running-in ultra-low friction.

Background technique

At present, with the development of the aviation industry and space technology, the conditions of use of lubricants are more stringent, such as high temperature, high speed, high vacuum, ultra-low temperature and strong radiation, etc., which exceed the use limit of lubricating oil and grease, so special lubricants must be selected lubricant for lubrication. Solid lubrication refers to the use of solid powders, films or monolithic materials to reduce friction and wear between two surfaces in relative motion and to protect the surfaces from damage. As a solid lubricating coating, carbon film has been applied to the working surfaces of disk protection, molds and cutters and has played a good role. However, before reaching the low-friction stable stage, most carbon films still have a high-friction running-in stage, that is, the running-in period. The friction and wear during the running-in period not only causes a large amount of energy dissipation, but also seriously affects the stability and durability of the entire mechanical system. sex. Normally, the friction coefficient between the traditional carbon film and steel material is about 0.20, but the smaller the friction coefficient between the two sliding contact surfaces in the actual working process (reaching an ultra-low friction state), it means that the friction generated during the friction process Less friction and wear. The method proposed in the prior art for how to realize the ultra-low friction state of the carbon film is realized under the protection of vacuum or dry inert gas.

However, the existing methods for achieving an ultra-low friction state are highly dependent on the environment, especially in the atmospheric environment, where the presence of water, oxygen molecules and high humidity affect the stability of the friction interface, making it difficult to rapidly Realize the ultra-low friction state of the carbon film.

Therefore, the prior art still needs to be improved and developed.

Contents of the invention

In view of the above deficiencies in the prior art, the purpose of the present invention is to provide a method for achieving near-zero running-in ultra-low friction, aiming to solve the problem that the existing carbon film is difficult to quickly reach the ultra-low friction state in the atmospheric environment, which affects the mechanical system. The stability and durability of the carbon film is difficult to quickly achieve the problem of ultra-low friction state.

Technical scheme of the present invention is as follows:

A method of achieving near-zero break-in ultra-low friction, comprising:

Deposit a carbon film on a conductive silicon wafer to obtain a silicon-doped graphene nanocrystalline carbon film;

The silicon-doped graphene nanocrystalline carbon film is arranged on an insulating substrate;

A metal friction member is arranged on the insulating substrate at a position facing the silicon-doped graphene nanocrystalline carbon film;

Applying a DC electric field between the silicon-doped graphene nanocrystalline carbon film and the metal friction piece; meanwhile, applying a normal load on the silicon-doped graphene nanocrystalline carbon film;

The metal friction piece is brought into contact with the silicon-doped graphene nanocrystalline carbon film, and a current-carrying friction test is carried out in an atmospheric environment.

The method for realizing near-zero running-in ultra-low friction, wherein, the silicon-doped graphene nanocrystalline carbon film is prepared by an electron cyclotron resonance plasma nano-surface processing system; the carbon film is deposited on a conductive silicon wafer to obtain The step of silicon-doped graphene nanocrystalline carbon film specifically comprises:

providing a conductive silicon wafer;

Fixing the conductive silicon wafer on the substrate frame of the electron cyclotron resonance plasma nanometer surface processing system;

Moving the substrate holder into the pre-vacuum chamber of the electron cyclotron resonance plasma nano-surface processing system, and evacuating it, and then sending it into the main vacuum chamber of the electron cyclotron resonance plasma nano-surface processing system;

After the air pressure in the main vacuum chamber drops to 8×10 ^-5 Pa, turn on the circulating cooling water and introduce argon to adjust the air pressure in the main vacuum chamber;

Set the currents of the three magnetic coils of the electron cyclotron resonance plasma nanometer surface processing system to 40 amps, 40 amps and 48 amps respectively, set the microwave power to 500 watts, and set the substrate bias to -50 volts, clean 2-4 minutes for the conductive silicon wafer;

Turn on the power supply of the carbon target and the silicon target of the electron cyclotron resonance plasma nanometer surface processing system, set the voltage of the carbon target to be -500 volts, and the substrate bias voltage to be 40-80 volts for electron irradiation mode A carbon film containing graphene nanocrystals is deposited, the current of the silicon target is 0.3-0.7 amps, and the deposition takes 30-60 minutes to obtain a silicon-doped graphene nanocrystal carbon film.

In the method for realizing near-zero running-in ultra-low friction, the adjusting the air pressure in the main vacuum chamber specifically includes: adjusting the air pressure in the main vacuum chamber to 0.1 Pa.

The method for realizing near-zero running-in ultra-low friction, wherein, the silicon concentration of the silicon-doped graphene nanocrystalline carbon film is 3%-13%, the thickness is 150-300 nanometers, and the surface roughness is 0.102 nanometers.

In the method for realizing near-zero running-in ultra-low friction, the metal friction part is one of 304 stainless steel parts, cast iron parts, and carbon steel parts.

In the method for realizing near-zero running-in ultra-low friction, the sliding speed of the metal friction member during the friction process is 0-120 mm/s, and the friction stroke is 20 mm.

The method for realizing near-zero running-in ultra-low friction, wherein the current of the direct current electric field is 0.5-1.0 A.

The method for realizing near-zero running-in ultra-low friction, wherein, the magnitude of the normal load is 5-7 N.

The present application also discloses a friction test device, which is used to realize the method for achieving near-zero running-in ultra-low friction as described above, which includes an insulating base, a metal friction piece, a power supply and a weight plate, and the insulating base It is used to carry a silicon-doped graphene nanocrystalline carbon film; the metal friction member is arranged on the top of the insulating substrate facing the position of the silicon-doped graphene nanocrystalline carbon film; the power supply is arranged on the insulating substrate On the substrate, it is connected with the metal friction piece and the conductive silicon sheet at the same time, and is used for applying a direct current electric field; Silicon-doped graphene nanocrystalline carbon film applies a normal load.

The friction test device, wherein, the friction test device also includes a fixing assembly arranged on the insulating substrate, the fixing assembly includes a conductive copper tape and a double-sided cloth tape, and the conductive copper tape is connected to the power supply Electrically connected, the silicon-doped graphene nanocrystalline carbon film is fixed on the conductive copper tape; the double-sided cloth tape is used to fix the conductive copper tape.

Compared with the prior art, the embodiment of the present invention has the following advantages:

In the method disclosed in the present application, a silicon-doped graphene nanocrystalline carbon film with an ultra-smooth surface is first prepared on a conductive silicon wafer, which helps to reduce the friction coefficient of the frictional contact surface, and then the silicon-doped graphene nanocrystalline The carbon film is placed on the insulating substrate. By adding a normal load on the metal friction part, the metal friction part exerts pressure on the silicon-doped graphene nanocrystalline carbon film. During the friction process, the metal friction part and the silicon-doped graphene nanocrystalline carbon film A DC electric field is applied between the crystalline carbon films, and the applied electric field can promote the rapid formation of a transfer film on the metal friction parts, shorten the running-in period between the metal friction parts and the silicon-doped graphene nanocrystalline carbon film, achieve near zero running-in, and quickly reach ultra-low Friction state; in general, the ultra-low friction state of the carbon film is quickly realized in the atmospheric environment, and at the same time reduces the friction loss between the carbon film and the metal friction parts, making the friction interface more stable, thereby improving the mechanical system. Stability and durability to quickly achieve the ultra-low friction state of the carbon film.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments described in the present invention. Those skilled in the art can also obtain other drawings based on these drawings without creative work.

Fig. 1 is the flow chart of the method for realizing near-zero running-in ultra-low friction in the present invention;

Fig. 2 is the flow chart of preparing silicon-doped graphene nanocrystalline carbon film in the method for realizing near-zero running-in ultra-low friction in the present invention;

Fig. 3 is the friction test result diagram of the method for realizing near-zero running-in ultra-low friction in the present invention;

Fig. 4 is a structural schematic diagram of the friction test device in the present invention.

Wherein, 10, insulating base; 20, metal friction part; 30, power supply; 40, weight plate; 50, fixed component.

Detailed ways

In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

Referring to Fig. 1, an embodiment of the application of the present invention discloses a method for achieving near-zero running-in ultra-low friction, which includes:

S100, depositing a carbon film on a conductive silicon wafer to obtain a silicon-doped graphene nanocrystalline carbon film;

S200, disposing the silicon-doped graphene nanocrystalline carbon film on an insulating substrate;

S300, disposing a metal friction member on the insulating substrate at a position facing the silicon-doped graphene nanocrystalline carbon film;

S400, applying a DC electric field between the silicon-doped graphene nanocrystalline carbon film and the metal friction member; at the same time, applying a normal load on the silicon-doped graphene nanocrystalline carbon film;

S500, making the metal friction piece contact with the silicon-doped graphene nanocrystalline carbon film and performing a current-carrying friction test in an atmospheric environment.

In the method disclosed in this embodiment, a silicon-doped graphene nanocrystalline carbon film with an ultra-smooth surface is first prepared on a conductive silicon wafer, which helps to reduce the friction coefficient of the frictional contact surface, and then the silicon-doped graphene nanocrystalline carbon film is The crystalline carbon film is placed on the insulating substrate. By adding a normal load on the metal friction part, the metal friction part exerts pressure on the silicon-doped graphene nanocrystalline carbon film. During the friction process, the metal friction part and the silicon-doped graphene A DC electric field is applied between the nanocrystalline carbon films, and the external electric field can promote the rapid formation of a transfer film on the metal friction parts, shorten the running-in period between the metal friction parts and the silicon-doped graphene nanocrystalline carbon film, achieve near-zero running-in, and quickly reach super Low friction state; in general, the ultra-low friction state of the carbon film is quickly realized in the atmospheric environment, and at the same time reduces the friction loss between the carbon film and the metal friction parts, making the friction interface more stable, thereby improving the mechanical system Excellent stability and durability to quickly achieve the ultra-low friction state of the carbon film.

As shown in Figure 2, as an implementation of this embodiment, it is disclosed that the silicon-doped graphene nanocrystalline carbon film is prepared by an electron cyclotron resonance (abbreviation ECR) plasma nano-surface processing system; the step S100 is specifically include:

S101. Provide a conductive silicon wafer;

S102, fixing the conductive silicon wafer on the substrate frame of the ECR plasma nano-surface processing system;

S103. Move the substrate holder into the pre-vacuum chamber of the ECR plasma nano-surface processing system, and evacuate it, and then send it into the main vacuum chamber of the ECR plasma nano-surface processing system;

S104. After the air pressure in the main vacuum chamber drops to 8×10 ^-5 Pa, turn on the circulating cooling water, and inject argon gas to adjust the air pressure in the main vacuum chamber;

S105. Set the currents of the three magnetic coils of the ECR plasma nano-surface processing system to 40 amps, 40 amps and 48 amps respectively, set the microwave power to 500 watts, and set the substrate bias to -50 volts, and clean 2-4 minutes for the conductive silicon wafer;

S106, turn on the power supply of the carbon target and the silicon target of the electron cyclotron resonance plasma nanometer surface processing system, set the voltage of the carbon target to -500 volts, and the substrate bias to 40-80 volts, for electron irradiation A carbon film containing graphene nanocrystals is deposited under the mode, the current of the silicon target is 0.3-0.7 amps, and the deposition takes 30-60 minutes to obtain a silicon-doped graphene nanocrystal carbon film.

The ECR (electron cyclotron resonance) plasma nanometer surface processing system disclosed in this embodiment is a processing technology based on the ECR plasma source. First, the air in the pre-vacuum chamber is exhausted by vacuuming to avoid the influence of impurity gases on the sputtering process, then the conductive silicon wafer is sent into the main vacuum chamber, and argon gas is introduced, and after the working pressure is adjusted to 0.1 Pa, the three The currents of the magnetic coils are set to 40, 40, and 48 amps respectively, and the microwave power is 500 watts. After the plasma is stable, set the substrate bias to -50 volts, and use the argon ions in the plasma to clean the substrate for about 3 minutes. , so that there are no impurities on the surface of the conductive silicon wafer, and the charges are arranged neatly, the magnetic field generated by the three magnetic coils can evenly generate high-density plasma in the main vacuum chamber; then apply a DC negative bias on the particle source, Attract the positive ions in the plasma flow to sputter the target, and the target elements produced by sputtering collide with the electrons in the plasma flow to ionize to obtain target ions. The target ions move towards the base under the electric field generated by the divergent magnetic field. High-quality film can be obtained by controlling the sheet movement.

In particular, in this embodiment, a silicon target and a carbon target are added and sputtered at the same time, by setting the above-mentioned gas pressure of 8×10 ^-5 Pa, current of 0.3-0.7 A, substrate bias of 40-80 volts, and deposition time of 30 -60 minutes and other parameters to prepare a silicon-doped graphene nanocrystalline carbon film can effectively obtain a hybrid carbon film with an expected silicon content. Compared with an ordinary carbon film, the silicon-doped graphene nanocrystalline carbon film produced in this embodiment The crystalline carbon film has a smoother surface and abundant graphene nanocrystals, and is used in the method disclosed in this embodiment, which is conducive to realizing an ultra-low friction state.

Specifically, as another implementation manner of this embodiment, it is disclosed that the adjusting the air pressure in the main vacuum chamber specifically includes:

Adjust the air pressure in the main vacuum chamber to 0.1 Pa.

In the actual implementation process of the method disclosed in this embodiment, by adjusting the flow rate of argon to make the pressure in the main vacuum chamber to 0.1 Pa, the process of sputtering film formation can be realized more stably and quickly.

Specifically, as another implementation of this embodiment, it is disclosed that the silicon concentration of the silicon-doped graphene nanocrystalline carbon film is 3%-13%, and the thickness is 150-300 nanometers, wherein the carbon film introduced Silicon element can combine with carbon element to form silicon carbide compound, change the growth direction of graphene nanocrystal to random orientation, and promote the silicon-doped graphene nanocrystal carbon film to have an ultra-smooth state with a surface roughness of 0.102 nanometers.

The silicon-doped graphene nanocrystalline carbon film in this embodiment needs to reach an ultra-smooth state, so it is necessary to control the silicon concentration in the film-forming process not to be too low. If it is too low, the surface roughness is not enough to meet the requirements; of course, the silicon concentration It should not be too high, which will affect the electrical conductivity and pressure bearing capacity of the silicon-doped graphene nanocrystalline carbon film, which is not conducive to the stability of the subsequent friction process.

On the other hand, the thickness of the silicon-doped graphene nanocrystalline carbon film should not be too small. If the silicon-doped graphene nanocrystalline carbon film is too thin, it will be easily broken during the friction process, which is not conducive to the stable and long-term operation of the mechanical system; The heterographene nanocrystalline carbon film should not be too thick. If the sputtered film is too thick, the physical properties of the film will be affected, which is not conducive to the stable subsequent friction process.

Specifically, as another implementation of this embodiment, it is disclosed that the metal friction part is one of 304 stainless steel parts, cast iron parts, and carbon steel parts. 304 stainless steel parts, cast iron parts, carbon steel parts and other components have good electrical conductivity, high hardness, and good wear resistance. Realize the process of forming a transfer film on the surface, pass the running-in period of the friction process, and accelerate into an ultra-low friction state.

Specifically, as another implementation of this embodiment, it is disclosed that the sliding speed of the metal friction member during the friction process is 0-120 mm/s, and the friction stroke is 20 mm.

Specifically, as another implementation manner of this embodiment, it is disclosed that the current of the direct current electric field is 0.5-1.0 A. The applied DC electric field should not be too large, which is not conducive to the formation of a uniform transfer film, affects the running-in time of the metal friction parts and the silicon-doped graphene nanocrystalline carbon film, and may cause breakdown and bring danger, which is not conducive to mechanical The stable operation of the system; the additional DC battery should not be too small, if it is less than 0.5A, it may delay the formation of the transfer film, or even fail to form a complete transfer film, which is not conducive to achieving the goal of a near-zero run-in period.

Specifically, as another implementation manner of this embodiment, it is disclosed that the magnitude of the normal load is 5-7 N. A normal load is applied on the metal friction part and transmitted to the silicon-doped graphene nanocrystalline carbon film to generate corresponding friction force during the friction process.

Specifically, as another implementation of this embodiment, a test process of current-carrying friction is disclosed as follows:

Determine the friction parameters, the normal load of the metal friction part is 5 N, the friction stroke is 20 mm, the sliding speed is 5 mm/s, and the output current intensity of the DC power supply is set to 1.0 A.

The friction test results are shown in Figure 3. From the experimental results of current-carrying friction, the silicon-doped graphene nanocrystalline carbon film with a thickness of 150 nanometers has a friction coefficient of 0.009 when the normal load is 5 N and the current is 1.0 ampere. (≤0.01) is ultra-low friction, and its running-in period is 5, that is, it reaches nearly zero running-in, indicating that the silicon-doped graphene nanocrystalline carbon film can quickly realize the friction test of the ultra-low friction state of the carbon film in the atmospheric environment .

As shown in Figure 4, it is the reciprocating current-carrying friction test device of the present application, which is used to realize the method of achieving near-zero running-in ultra-low friction as described above, including an insulating base 10, a metal friction part 20, a power supply 30 and a weight plate 40, the insulating substrate 10 is used to carry a silicon-doped graphene nanocrystalline carbon film; The position of the crystalline carbon film; the power supply 30 is arranged on the insulating substrate 10, and is electrically connected with the metal friction member 20 and the silicon-doped graphene nanocrystalline carbon film simultaneously, for applying a DC electric field; the The weight plate 40 is disposed on the top of the metal friction member 20 and is used for accommodating weights to apply a normal load to the silicon-doped graphene nanocrystalline carbon film. In order to stabilize the weight plate 40, a through hole may be provided in the center of the weight plate 40 for fixing the metal friction rod.

The reciprocating current-carrying friction test device in this embodiment is powered by a power supply 30 to provide an external electric field, and the weight plate 40 places weights to provide an additional normal load, so that the metal friction member 20 can be pressed on the silicon-doped graphene nanocrystalline carbon film. The friction process of ultra-low friction coefficient is carried out on the surface, so that the mechanical system can maintain the state of ultra-low friction and complete the work in the atmospheric environment, reducing the requirements for the working environment, thereby increasing the application occasions of ultra-low friction structures and improving the value of popularization and application .

Specifically, as an implementation of this embodiment, it is disclosed that the friction test device further includes a fixing component arranged on the insulating substrate 10, the fixing component includes a conductive copper tape and a double-sided cloth tape, and the The conductive copper tape is electrically connected to the power supply 30, and the silicon-doped graphene nanocrystalline carbon film is fixed on the conductive copper tape; the double-sided cloth tape is used to fix the conductive copper tape.

Specifically, as an implementation of this embodiment, it is disclosed that the friction test device further includes a base fixing frame, a cantilever beam, and an upper fixing unit, the insulating base 10 is arranged on the base fixing frame, and the upper fixing unit is fixed on the on the cantilever beam, and extends above the insulating base 10, the upper fixing unit includes a metal friction piece 20, an internal threaded conductive clamp for fixing the metal friction piece 20, and an external threaded fixing rod for fixing on the cantilever beam. The top of the threaded fixing rod has an internal thread hole and a groove hole at the bottom for placing the metal friction part 20 .

In summary, the present application discloses a method for achieving near-zero running-in ultra-low friction, which includes:

S100, depositing a carbon film on a conductive silicon wafer to obtain a silicon-doped graphene nanocrystalline carbon film;

S200, disposing the silicon-doped graphene nanocrystalline carbon film on an insulating substrate;

S300, disposing a metal friction member on the insulating substrate at a position facing the silicon-doped graphene nanocrystalline carbon film;

S400, applying a DC electric field between the silicon-doped graphene nanocrystalline carbon film and the metal friction member; at the same time, applying a normal load on the silicon-doped graphene nanocrystalline carbon film;

S500, making the metal friction piece contact with the silicon-doped graphene nanocrystalline carbon film and performing a current-carrying friction test in an atmospheric environment.

In the method disclosed in this embodiment, a silicon-doped graphene nanocrystalline carbon film with an ultra-smooth surface is first prepared on a conductive silicon wafer, which helps to reduce the friction coefficient of the frictional contact surface, and then the silicon-doped graphene nanocrystalline carbon film is The crystalline carbon film is placed on the insulating substrate. By adding a normal load on the metal friction part, the metal friction part exerts pressure on the silicon-doped graphene nanocrystalline carbon film. During the friction process, the metal friction part and the silicon-doped graphene A DC electric field is applied between the nanocrystalline carbon films, and the external electric field can promote the rapid formation of a transfer film on the metal friction parts, shorten the running-in period between the metal friction parts and the silicon-doped graphene nanocrystalline carbon film, achieve near-zero running-in, and quickly reach super Low friction state; in general, the ultra-low friction state of the carbon film is quickly realized in the atmospheric environment, and at the same time reduces the friction loss between the carbon film and the metal friction parts, making the friction interface more stable, thereby improving the mechanical system Excellent stability and durability to quickly achieve the ultra-low friction state of the carbon film.

It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other.

It should be understood that the present invention is not limited to the precise constructions which have been described above and shown in the accompanying drawings, and various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.

The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included in the protection of the present invention. within range.

Claims (4)

1. The method for realizing near zero running-in ultralow friction is applied to a friction test device for realizing near zero running-in ultralow friction, and is characterized in that the friction test device comprises:

the insulating substrate is used for bearing the silicon-doped graphene nanocrystalline carbon film;

the metal friction piece is arranged above the insulating substrate and opposite to the position of the silicon-doped graphene nanocrystalline carbon film;

the power supply is arranged on the insulating substrate, is connected with the metal friction piece and the silicon-doped graphene nanocrystalline carbon film and is used for applying a direct-current electric field; and

the weight tray is arranged at the top end of the metal friction piece and used for accommodating weights so as to apply normal load to the silicon-doped graphene nanocrystalline carbon film;

the method for realizing near zero running-in ultralow friction comprises the following steps:

depositing a carbon film on a conductive silicon wafer to obtain a silicon-doped graphene nanocrystalline carbon film;

disposing the silicon-doped graphene nanocrystalline carbon film on an insulating substrate;

a metal friction piece is arranged above the insulating substrate and opposite to the silicon-doped graphene nanocrystalline carbon film;

applying a direct current electric field between the silicon-doped graphene nanocrystalline carbon film and the metal friction piece; simultaneously, applying a normal load on the silicon-doped graphene nanocrystalline carbon film;

the metal friction piece is contacted with the silicon-doped graphene nanocrystalline carbon film, and a current-carrying friction test is carried out in an atmospheric environment;

the silicon-doped graphene nanocrystalline carbon film is prepared by adopting an electron cyclotron resonance plasma nano surface processing system; the step of depositing a carbon film on a conductive silicon wafer to obtain a silicon-doped graphene nanocrystalline carbon film specifically comprises the following steps:

providing a conductive silicon wafer;

fixing the conductive silicon chip on a substrate frame of the electron cyclotron resonance plasma nano surface processing system;

moving the substrate frame into a pre-vacuum chamber of the electron cyclotron resonance plasma nano surface machining system, pre-vacuumizing, and then feeding the substrate frame into a main vacuum chamber of the electron cyclotron resonance plasma nano surface machining system;

to reduce the air pressure in the main vacuum chamber to 8 multiplied by 10 ^-5 Pa, opening circulating cooling water, introducing argon, and adjusting the air pressure in the main vacuum chamber;

setting the currents of three magnetic coils of the electron cyclotron resonance plasma nano surface processing system to be 40A, 40A and 48A respectively, setting the microwave power to be 500W, setting the substrate bias voltage to be-50V, and cleaning the conductive silicon wafer for 2-4 minutes;

turning on power supplies of a carbon target and a silicon target of the electron cyclotron resonance plasma nano surface processing system, setting the voltage of the carbon target to be-500V, setting the substrate bias voltage to be 40-80V, and depositing a carbon film containing graphene nanocrystals in an electron irradiation mode, wherein the current of the silicon target is 0.3-0.7A, and depositing for 30-60 minutes to obtain a silicon-doped graphene nanocrystal carbon film;

the silicon concentration of the silicon doped graphene nanocrystalline carbon film is 3% -13%, the thickness is 150-300 nanometers, and the surface roughness is 0.102 nanometer; the sliding speed of the metal friction piece in the friction process is 0-120 mm/s, and the friction stroke is 20 mm; the current of the direct current electric field is 0.5-1.0A; the normal load is 5-7 newtons;

and the silicon element in the silicon-doped graphene nanocrystalline carbon film is combined with the carbon element to form a silicon carbide compound, and the growth direction of the graphene nanocrystalline is randomly oriented, so that the silicon-doped graphene nanocrystalline carbon film is enabled to have an ultra-smooth state.

2. The method for achieving near zero running-in ultra low friction according to claim 1, wherein said adjusting the air pressure in said main vacuum chamber comprises:

and regulating the air pressure in the main vacuum chamber to 0.1 Pa.

3. The method of achieving near zero running-in ultra low friction according to claim 1, wherein the metal friction member is one of a 304 stainless steel member, an iron casting, a carbon steel member.

4. The method for realizing near zero running-in ultra-low friction according to claim 1, wherein the friction test device further comprises a fixing component arranged on the insulating substrate, the fixing component comprises a conductive copper tape and a double-sided cloth tape, the conductive copper tape is electrically connected with the power supply, and the silicon-doped graphene nanocrystalline carbon film is fixed on the conductive copper tape; the double-sided tape is used for fixing the conductive copper tape.