CN114388449A - crack stop structure - Google Patents

Abstract

The present application discloses a crack stop structure, comprising: a first crack stop line, including a first block line group and a second block line group arranged oppositely; wherein the first block line group and the second block line group each include multiple each blocking line includes at least one interconnecting line in the vertical direction; the interconnecting lines of the first blocking line group and the interconnecting lines of the second blocking line group on the same horizontal plane are staggered, A curved channel extending from one side of the first crack stop line to the other side is formed between the interconnecting lines of the first blocking line group and the interconnecting lines of the second blocking line group. The crack stop structure of the present application includes two crack stop lines, thereby forming a double stop for cracks; the first crack stop line includes a first block line group and a second block line group arranged oppositely, and the block line of the first block line group is The interlaced arrangement with the blocking lines of the second blocking line group can effectively prevent the crack from extending and advancing, and reduce the occurrence of chip breakage and the like.

Description

crack stop structure

technical field

The present application relates to the technical field of semiconductor manufacturing, and in particular, to a crack stop structure.

Background technique

With the complexity and refinement of the design of semiconductor devices, the use of interconnect lines in the design continues to increase. In addition, in order to reduce the capacitance generated by the BEOL, when using low-k, the mechanical properties of the IMD are weakened, and the cutting of the separated chips (sawing ) stage often occurs chip breakage, etc., resulting in product damage. The size of the interconnect lines is designed to be smaller and smaller, and in order to realize various advanced functions of the chip, the interconnect line density is also set to be larger and larger. In order to improve the RC delay caused by the narrowing of the metal wire spacing, low-k materials with low physical strength and low dielectric coefficient are increasingly used. When dicing and separating each chip from a wafer, chip damage due to cracking and breakage due to weakened film quality is increasing.

SUMMARY OF THE INVENTION

An object of the present application is to provide a crack stop structure. In order to provide a basic understanding of some aspects of the disclosed embodiments, a brief summary is given below. This summary is not intended to be an extensive review, nor is it intended to identify key/critical elements or delineate the scope of protection of these embodiments. Its sole purpose is to present some concepts in a simplified form as a prelude to the detailed description that follows.

According to an aspect of the embodiments of the present application, a crack stop structure is provided, including:

a first crack stop line, comprising a first block line group and a second block line group that are oppositely disposed;

Wherein, the first blocking wire group and the second blocking wire group each include a plurality of blocking wires; each of the blocking wires includes at least one interconnecting wire in the vertical direction; the first blocking wires on the same horizontal plane The interconnecting lines of the blocking line group are arranged in a staggered manner with the interconnecting lines of the second blocking line group to form between the interconnecting lines of the first blocking line group and the interconnecting lines of the second blocking line group A curved channel extending from one side of the first crack stop line to the other.

The technical solution provided by one aspect of the embodiments of the present application may include the following beneficial effects:

In the crack stop structure provided by the embodiment of the present application, the first crack stop line includes a first block line group and a second block line group that are oppositely arranged, and the block lines of the first block line group and the block lines of the second block line group are arranged alternately , which can effectively prevent the crack from extending and advancing, and reduce the occurrence of chipping and other situations.

Other features and advantages of the present application will be set forth in the description that follows, and, in part, will become apparent from the description, or may be inferred or unambiguously determined from the description, or may be implemented by practice of the present application. example to understand. The objectives and other advantages of the application may be realized and attained by the structure particularly pointed out in the written description, claims, and drawings.

Description of drawings

In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the accompanying drawings that are used in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only These are some embodiments described in this application. For those of ordinary skill in the art, other drawings can also be obtained based on these drawings without any creative effort.

Fig. 1 shows the structural schematic diagram of the crack stop structure of Example 1 of the present application;

FIG. 2 shows a schematic structural diagram corresponding to another perspective of FIG. 1;

FIG. 3 shows the three-dimensional shape of the interconnection line in Embodiment 1;

Fig. 4 shows the structural schematic diagram of the crack stop structure of Example 2 of the present application;

FIG. 5 shows a schematic structural diagram corresponding to another viewing angle of FIG. 4;

FIG. 6 shows a schematic structural diagram after removing the two third interconnecting lines in FIG. 5;

Fig. 7 shows the structural schematic diagram of the crack stop structure of Example 3 of the present application;

FIG. 8 shows a schematic structural diagram corresponding to another perspective of FIG. 7;

Fig. 9 shows the structural schematic diagram of the crack stop structure of Example 4 of the present application;

FIG. 10 shows a schematic structural diagram corresponding to another viewing angle of FIG. 9;

FIG. 11 shows a schematic structural diagram of the crack stop structure of Example 5 of the present application;

FIG. 12 is a schematic diagram showing the principle of the crack stop structure preventing crack extension according to an embodiment of the present application.

Detailed ways

Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concepts of the present disclosure.

Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not to scale, some details have been exaggerated for clarity, and some details may have been omitted. The shapes of the various regions and layers shown in the figures, as well as their relative sizes and positional relationships are only exemplary, and may vary in practice due to manufacturing tolerances or technical limitations, and those skilled in the art will Regions/layers with different shapes, sizes, relative positions can be additionally designed as desired.

In the context of this disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present therebetween. element. In addition, if a layer/element is "on" another layer/element in one orientation, then when the orientation is reversed, the layer/element can be "under" the other layer/element.

Example 1

As shown in FIG. 1 and FIG. 2 , the present embodiment provides a crack stop structure including a first crack stop line 1 , a second crack stop line 2 and a top layer interconnection line 6 .

The tops of the first crack stop line 1 and the second crack stop line 2 are both connected to the bottom surface of the same top layer interconnection line 6 .

The first crack stop line 1 is located on one side of the Scribe lane area. The second crack stop line 2 is located on the side of the first crack stop line 1 away from the scribe line channel area.

The first crack stop line 1 includes two block line groups arranged oppositely, namely a first block line group and a second block line group. Each blocking wire group includes several blocking wires with identical shapes and structures.

The first blocking wire group includes several first blocking wires 1A, and the second blocking wire group includes several second blocking wires 1B. The first blocking wires 1A of the first blocking wire group and the second blocking wires 1B of the second blocking wire group are arranged alternately. The structure and shape of the first blocking wire 1A and the second blocking wire 1B are exactly the same.

Each blocking line includes four metal plugs and three interconnecting lines arranged in a cross-laminated arrangement, an interconnecting line is sandwiched between each two adjacent metal plugs, and a metal plug is connected between the two adjacent interconnecting lines. connect.

The first blocking line 1A includes a first metal plug 1AV1, a first interconnection line 1AM1, a second metal plug 1AV2, a second interconnection line 1AM2, a third metal plug 1AV3, a second metal plug 1AV2, a second Three interconnection lines 1AM3 and fourth metal plugs 1AV4.

The second blocking line 1B has the same structure as the first blocking line 1A, and includes a first metal plug 1BV1, a first interconnection line 1BM1, a second metal plug 1BV2, and a second interconnection line stacked in sequence from bottom to top 1BM2, a third metal plug 1BV3, a third interconnection line 1BM3, and a fourth metal plug 1BV4.

The first metal plugs 1AV1 and 1BV1 are respectively connected to the active regions 8 on the semiconductor base layer 7 . The cross-sectional structure taken along A-A' in Fig. 2 is shown in Fig. 1 .

Each interconnection line of the blocking line has a symmetrical structure, each interconnection line has a symmetry plane perpendicular to the bottom surface of the top interconnection line 6, and the symmetry plane can divide the interconnection line into two symmetrical parts. In this embodiment, the symmetry planes of the three interconnecting lines of the blocking line are the same plane.

The top view shape of the interconnection line is the shape shown in FIG. 2 , which is the shape of “[” or “]”. The three-dimensional shape of the interconnection line is shown in FIG. 3 . Each interconnection line includes an integrally formed back plate 1-1 and two side plates 1-2. The two side panels 1-2 are respectively located on both sides of the back panel 1-1, and the side panels 1-2 and the back panel 1-1 are perpendicular to each other. The back panel 1-1 and the two side panels 1-2 form a concave shape. Slots 1-3. The interconnection line is a symmetrical structure, and has a symmetry plane α, and the symmetry plane α divides the interconnection line into two mirror-symmetrical parts.

The second crack stop line 2 includes four metal plugs and three interconnecting lines that are arranged in a cross-layered manner, an interconnecting line is sandwiched between every two adjacent metal plugs, and each interconnecting line is in the shape of a rectangular parallelepiped. The second crack stop line 2 includes a first metal plug 2V1, a first interconnection line 2M1, a second metal plug 2V2, a second interconnection line 2M2, a third metal plug 2V3, The third interconnection line 2M3 and the fourth metal plug 2V4. The first metal plug 2V1 of the second crack stop line 2 is connected to another active region 8 on the semiconductor base layer 7 . As shown in FIG. 1 , an intermetal dielectric (IMD) 9 is filled between the top interconnect 6 and the semiconductor base layer 7 . The first crack stop line 1 and the second crack stop line 2 are surrounded by an intermetal dielectric layer (IMD) 9 .

In this embodiment, all the first blocking lines 1A and all the second blocking lines 1B are staggered, and the side plates of two adjacent third interconnecting lines 1AM3 protrude into the grooves of the same third interconnecting line 1BM3. At the same time, The side plates of two adjacent third interconnection lines 1BM3 extend into the grooves of the same third interconnection line 1AM3 .

The second crack stop line 2 includes four metal plugs and three interconnecting lines which are arranged in a cross-layered manner, and the three interconnecting lines are all in the shape of a rectangular parallelepiped.

As shown in FIG. 12 , the semiconductor base layer 7 has a cutting channel area 4, a guard ring 3 and a circuit area 5. A crack C is generated on the cutting channel area 4, and the crack C extends and advances, and first encounters the first crack stop line 1, and the second A crack stop line 1 can form a first line of defense against cracks and prevent the crack from extending. The first block line group and the second block line group are staggered to form a bend extending from one side of the first crack stop line 1 to the other side thereof. Channel T, the blocking line plays the role of preventing the crack C from advancing. If the crack C enters the curved channel T, it is very easy to differentiate into smaller cracks, so the first crack stop line 1 plays the role of preventing and differentiating the crack C; when When the first crack stop line 1 cannot prevent the crack C from advancing, the first block line group and the second block line group can at least differentiate the crack C into smaller cracks; if the crack C extends through the gap of the first block line group , the second blocking line group continues to prevent the crack C from extending forward. If the crack C passes through the gap of the second blocking line group, the second crack stop line 2 acts as a second line of defense to prevent the crack C from continuing to extend. The two lines of defense prevent the crack C from extending, which can effectively prevent the crack from extending and reduce the occurrence of chipping and other situations.

Example 2

The symmetry plane of the first interconnection line and the third interconnection line of the blocking line is the same plane perpendicular to the bottom surface of the top layer interconnection line 6, as shown in Fig. 4-Fig. The symmetry plane of the connection line is not the same plane as the symmetry plane of the first interconnection line, and the symmetry plane of the second interconnection line and the symmetry plane of the first interconnection line are parallel to each other. The side plates of the two adjacent third interconnection lines 1AM3 extend into the grooves of the same third interconnection line 1BM3, and at the same time, the side plates of the two adjacent third interconnection lines 1BM3 extend into the grooves of the same third interconnection line 1AM3. in the groove. The side plates of two adjacent second interconnect lines 1AM2 protrude into the grooves of the same third interconnect line 1BM2, and at the same time, the side plates of two adjacent third interconnect lines 1BM2 protrude into the grooves of the same third interconnect line 1AM2. in the groove. The cross-sectional structure taken along A-A' in FIG. 5 is shown in FIG. 4 .

Example 3

As shown in Figures 7 and 8, the difference from Embodiment 1 is that 1AM2 and 1BM2 are both in the shape of a cuboid, 1AM2 and 1BM2 are connected as one, all 1AM2 are connected as one, all 1BM2 are connected as one, and all 1AM2 and all 1BM2 are connected as one It is a cuboid-shaped one-piece interconnection line integral layer 1M2. The side plates of the two adjacent third interconnection lines 1AM3 extend into the grooves of the same third interconnection line 1BM3, and at the same time, the side plates of the two adjacent third interconnection lines 1BM3 extend into the grooves of the same third interconnection line 1AM3. in the groove. The cross-sectional structure taken along A-A' in FIG. 8 is shown in FIG. 7 .

Example 4

As shown in FIGS. 9 and 10 , on the basis of Embodiment 2, the difference from Embodiment 2 is that the tops of the first crack stop line 1 and the second crack stop line 2 are connected to the top layer interconnection line 6a and the top layer respectively. on the interconnection line 6b. The top interconnect 6a and the top interconnect 6b are not in contact with each other, and the top and bottom surfaces of the top interconnect 6a and the top and bottom of the top interconnect 6b are on the same plane, respectively. The cross-sectional structure taken along A-A' in FIG. 10 is shown in FIG. 9 . As shown in FIG. 9 , an intermetal dielectric layer (IMD) 9 is filled in the space below the top layer interconnection line 6a and the top layer interconnection line 6b and above the semiconductor base layer 7 . The first crack stop line 1 and the second crack stop line 2 are surrounded by an intermetal dielectric layer (IMD) 9 .

Example 5

As shown in FIG. 11 , different from the crack stop structure provided by Embodiment 1, in the crack stop structure provided by this embodiment, the first blocking line 1A includes an interconnection line 1AM and two metal plugs 1AV1 and 1AV2 , and the second blocking line 1A includes an interconnection line 1AM and two metal plugs 1AV1 and 1AV2 . The blocking line 1B includes one interconnection line 1BM and two metal plugs 1BV1 and 1BV2, and the second crack stop line 2 includes one interconnection line 2M and two metal plugs 2V1 and 2V2.

When a crack caused by dicing occurs, the crack extends mechanically straight, and the first blocking is performed by the interconnection line of the first blocking line, and the extra force is distributed to the part of the insulating film which is weaker than the interconnection line, and then the second blockage line is performed. The blocking line again blocks the force of the rupture extending forward. Even if the crack passes through these two blocking lines, there is a second crack stop line that stops the crack from extending.

In addition, in some other embodiments, the width of the interconnect lines and the space between the interconnect lines are the smallest dimensions allowed by the process. Except for the interconnection line of the uppermost layer, the interconnection lines of the bent form can all exist in the same position in the horizontal direction in the same form, and the upper and lower layers are connected by metal plugs in the form of wiring. In addition, the numbers of interconnecting lines and metal plugs in the first blocking line, the second blocking line, and the second crack-stopping line may also be other numbers, which are not limited to the numbers in the above embodiments.

The crack stop structure provided by the embodiment of the present application includes two crack stop lines, thereby forming a double stop for cracks; the first crack stop line includes a first block line group and a second block line group arranged oppositely, and the first block line group The blocking lines of the first block and the blocking lines of the second blocking line group are arranged staggered, which can effectively prevent the cracks from extending and advancing, and reduce the occurrence of chipping and other situations.

In the above description, technical details such as patterning and etching of each layer are not described in detail. However, those skilled in the art should understand that various technical means can be used to form layers, regions, etc. of desired shapes. In addition, in order to form the same structure, those skilled in the art can also design methods that are not exactly the same as those described above. Additionally, although the various embodiments are described above separately, this does not mean that the measures in the various embodiments cannot be used in combination to advantage. The technical solution of the present application is not limited to these several embodiments, nor is it limited to these several layers of metal wires. In other embodiments, metal interconnect layers can be arbitrarily matched and regularly added.

Embodiments of the present disclosure have been described above. However, these examples are for illustrative purposes only, and are not intended to limit the scope of the present disclosure. The scope of the present disclosure is defined by the appended claims and their equivalents. Without departing from the scope of the present disclosure, those skilled in the art can make various substitutions and modifications, and these substitutions and modifications should all fall within the scope of the present disclosure.

Claims (12)

1. A crack stop structure, characterized in that, comprising: a first crack stop line, including a first block line group and a second block line group arranged oppositely; Wherein, the first blocking wire group and the second blocking wire group each include a plurality of blocking wires; each of the blocking wires includes at least one interconnecting wire in the vertical direction; the first blocking wires on the same horizontal plane The interconnecting lines of the blocking line group are arranged in a staggered manner with the interconnecting lines of the second blocking line group to form between the interconnecting lines of the first blocking line group and the interconnecting lines of the second blocking line group A curved channel extending from one side of the first crack stop line to the other. 2 . The crack stop structure according to claim 1 , wherein the blocking line comprises a first metal plug, a first interconnection line, a second metal plug, a second metal plug and a second metal plug which are sequentially stacked from bottom to top. An interconnection line, a third metal plug, a third interconnection line and a fourth metal plug. 3 . The crack stop structure according to claim 2 , wherein the third interconnection line is a symmetrical structure, comprising an integrally formed back plate and two side plates; the two side plates are respectively located in the The two sides of the back plate and the side plates and the back plate are perpendicular to each other; the back plate and the two side plates enclose a groove; the side plates of the first blocking line group respectively extend into the In the corresponding grooves of the second blocking wire, each side plate of the second blocking wire group extends into the corresponding grooves of the first blocking wire respectively. 4 . The crack stop structure of claim 3 , wherein the structure of the second interconnection line is the same as that of the third interconnection line. 5 . 5 . The crack stop structure according to claim 4 , wherein the symmetry plane of the second interconnection line and the symmetry plane of the third interconnection line are the same plane. 6 . 6 . The crack stop structure of claim 4 , wherein the symmetry plane of the second interconnection line and the symmetry plane of the third interconnection line are parallel to each other. 7 . 7 . The crack stop structure according to claim 3 , wherein all the second interconnect lines of the first crack stop line are formed as an integral cuboid structure. 8 . 8 . The crack stop structure of claim 3 , wherein the structure of the first interconnection line is the same as that of the third interconnection line. 9 . 9. The crack stop structure of claim 1, wherein the crack stop structure further comprises: a second crack stop line including at least one interconnection line; The top end of the first crack stop line and the top end of the second crack stop line are both provided with a top layer interconnection line; The bottom end of the first crack stop line and the bottom end of the second crack stop line are both disposed on the same semiconductor base layer. 10 . The crack stop structure according to claim 9 , wherein the second crack stop line comprises a plurality of metal plugs and a plurality of interconnecting lines arranged in a cross-layered manner. 11 . 11 . The crack stop structure of claim 10 , wherein the metal plug and the interconnection line layer of the second crack stop line are both in the shape of a rectangular parallelepiped. 12 . 12 . The crack stop structure according to claim 9 , wherein the top layer interconnection line disposed at the top of the first crack stop line and the top layer interconnect line disposed at the top of the second crack stop line are the same. 13 . Top-level interconnect lines or top-level interconnect lines provided independently.

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