CN114429916B - Detection device - Google Patents
Detection deviceInfo
- Publication number
- CN114429916B CN114429916B CN202011179343.0A CN202011179343A CN114429916B CN 114429916 B CN114429916 B CN 114429916B CN 202011179343 A CN202011179343 A CN 202011179343A CN 114429916 B CN114429916 B CN 114429916B
- Authority
- CN
- China
- Prior art keywords
- pitch
- screw
- conductive structure
- locking assembly
- detection device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention provides a detection device which comprises a carrier plate, a plurality of telescopic probes, a locking assembly and a conductive structure. The carrier plate is provided with through holes and grounding pads corresponding to the through holes. The carrier plate is provided with a first surface and a second surface opposite to the first surface, the through hole penetrates from the first surface to the second surface, and the grounding pad is arranged on the second surface. The plurality of telescopic probes are arranged on the first surface of the carrier plate in parallel. The locking component passes through the through hole. The locking assembly includes a screw. The head of the screw has a first pitch and a second pitch, the density of the first pitch being different from the density of the second pitch. The conductive structure is partially embedded in the locking component, wherein the conductive structure, the locking component and the grounding pad are electrically connected.
Description
Technical Field
The present invention relates to a detection device, and more particularly, to a detection device capable of improving a power supply return (backflow) path.
Background
Generally, after the semiconductor chip is manufactured, a final test (FINALTEST, FT) is performed on the semiconductor chip to ensure the quality of the semiconductor chip at the time of shipment. When the electrical detection is performed, the flexible probes of the detection device generate a reaction force when the flexible probes are pressed, and when the number of the flexible probes is too large, the carrier plate generates a warping (warpage) phenomenon, and at present, screws are arranged on the carrier plate to reduce the warping phenomenon.
However, since the screw replaces part of the position of the telescopic probe and the semiconductor chip floats on the screw and is not electrically connected with the screw, the current reflux path is reduced, the current reflux proportion is reduced, and the current which is not refluxed is discharged from other places, so that adverse effects are generated on the detection device.
Disclosure of Invention
The invention provides a detection device which can improve the current reflux path while reducing the warpage phenomenon, improves the current reflux proportion and has better power supply integrity/signal integrity performance.
The invention relates to a detection device, which comprises a carrier plate, a plurality of telescopic probes, a locking assembly and a conductive structure. The carrier plate is provided with through holes and grounding pads corresponding to the through holes. The carrier plate is provided with a first surface and a second surface opposite to the first surface, the through hole penetrates from the first surface to the second surface, and the grounding pad is arranged on the second surface. The plurality of telescopic probes are arranged on the first surface of the carrier plate in parallel. The locking component passes through the through hole. The locking assembly includes a screw. The head of the screw has a first pitch and a second pitch, the density of the first pitch being different from the density of the second pitch. The conductive structure is partially embedded in the locking component, wherein the conductive structure, the locking component and the grounding pad are electrically connected.
The invention relates to a detection device for detecting a semiconductor chip. The detection device comprises a carrier plate, a plurality of telescopic probes, a locking assembly and a conductive structure. The carrier plate is provided with through holes and grounding pads corresponding to the through holes. The carrier plate is provided with a first surface and a second surface opposite to the first surface, the through hole penetrates from the first surface to the second surface, and the grounding pad is arranged on the second surface. The plurality of telescopic probes are arranged on the first surface of the carrier plate in parallel. The locking component passes through the through hole. The locking assembly includes a screw. The head of the screw has a first pitch and a second pitch, the density of the first pitch being different from the density of the second pitch. The conductive structure is arranged in the locking assembly, and the detection device is used for reflowing the current of the semiconductor chip to the grounding pad through the conductive structure and the locking assembly.
Based on the above, the detection device of the invention is designed with the conductive structure, part of the conductive structure can be embedded into the locking assembly, and the conductive structure and the locking assembly are electrically connected with the grounding pad, so that the current of the semiconductor chip can flow back to the grounding pad through the conductive structure and the locking assembly during the subsequent detection, thereby reducing the warpage phenomenon, improving the current backflow path, increasing the current backflow proportion, and having better power integrity/signal integrity performance. In addition, the locking assembly can comprise screws with different screw pitch densities, so that the probability of influence on a detection result caused by shaking of the detection device during electrical detection is reduced.
In order to make the above features and advantages of the present invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
FIG. 1A is a schematic, partially cut-away view of a detection device according to an embodiment of the present invention;
FIG. 1B is a schematic diagram illustrating an assembly of a locking assembly and a conductive structure of a detecting device according to an embodiment of the invention;
FIG. 1C is a schematic perspective view of a screw of a locking assembly of a detecting device according to an embodiment of the invention;
FIG. 1D is a schematic top view of a gasket of a locking assembly of a detection device according to an embodiment of the invention;
FIG. 1E is a schematic top view of a threaded sleeve of a locking assembly of a detection device according to an embodiment of the present invention;
Fig. 2 is a schematic perspective view of a screw of a locking assembly of a detecting device according to another embodiment of the invention.
Detailed Description
Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.
Directional terms used herein (e.g., up, down, right, left, front, rear, top, bottom) are used merely as references to the drawings depicted and are not intended to imply absolute orientation.
The present invention will be described more fully with reference to the accompanying drawings of this embodiment. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. The thickness, dimensions, or size of layers or regions in the drawings may be exaggerated for clarity. The same or similar reference numerals denote the same or similar elements, and the following paragraphs will not be repeated.
Fig. 1A is a schematic, partially cut-away view of a detection device according to an embodiment of the present invention. Fig. 1B is an assembly schematic diagram of a locking assembly and a conductive structure of a detection device according to an embodiment of the invention. Fig. 1C is a schematic perspective view of a screw of a locking assembly of a detection device according to an embodiment of the invention. Fig. 1D is a schematic top view of a gasket of a locking assembly of a detection device according to an embodiment of the invention. Fig. 1E is a schematic top view of a threaded sleeve of a locking assembly of a detection device according to an embodiment of the present invention.
Referring to fig. 1A to 1E, the inspection apparatus 100 of the present embodiment is used for inspecting an object, for example, a semiconductor chip 10. The detection device 100 includes a carrier 110, a plurality of pogo pins 120, a locking assembly 130, and a conductive structure 140. Further, the carrier 110 may have a through hole 112 and a ground pad 114 corresponding to the through hole 112, wherein the carrier 110 has a first surface 110a and a second surface 110b opposite to the first surface 110a, the through hole 112 may extend from the first surface 110a to the second surface 110b, and the ground pad 114 may be disposed on the second surface 110b. And the through hole 112 may be used to accommodate the locking component 130. Here, the carrier 110 may be any suitable circuit substrate, which is not limited by the present invention.
In this embodiment, the plurality of pogo pins 120 may be disposed on the first surface 110a of the carrier 110 in parallel, wherein one end of each pogo pin 120 may be connected to a contact (not shown) on the carrier 110, and the other end may abut against the conductive terminal 12 of the semiconductor chip 10 to perform signal detection of the semiconductor chip 10. Here, the conductive terminals 12 are solder balls, but the present invention is not limited thereto, and the type of the conductive terminals 12 may be determined according to practical design requirements.
In an embodiment, the detection device 100 may further include a probe holder 150, and the pogo pins 120 may be located side by side inside the probe holder 150 and pass through the probe holder 150 in parallel with each other. For example, the probe holder 150 may have an inner space and a plurality of column grooves (not shown) therein, wherein the column grooves may be parallel to each other and connect the inner space, so that the pogo pins 120 may be respectively fixed in the column grooves.
In addition, locking assembly 130 may be disposed between adjacent ones of pogo pins 120 through holes 112. Further, the locking assembly 130 may include a screw 132, wherein the screw 132 may include a head 1321 and an end 1322 coupled to the head 1321. For example, the head 1321 may be a portion of the screw 132 protruding from the first surface 110a of the carrier 110, and the end 1322 may be a portion of the screw 132 penetrating the through hole 112, but the invention is not limited thereto.
In this embodiment, the conductive structure 140 is designed in the detection device 100, part of the conductive structure 140 can be embedded in the locking component 130, and the conductive structure 140 and the locking component 130 are electrically connected with the grounding pad 114, so that the current of the semiconductor chip 10 can flow back to the grounding pad 114 through the conductive structure 140 and the locking component 130 during the subsequent detection, and the current flows to the grounding pad 114 as shown by the arrow in fig. 1A, so that the warpage phenomenon can be reduced, the current backflow path can be improved, the current backflow proportion can be improved, and better power integrity/signal integrity (powerintegrity/SIGNAL INTEGRITY, PI/SI) performance can be achieved.
On the other hand, the locking assembly 130 is designed in the detecting device 100, so that the head 1321 of the screw 132 has a pitch D11 and a pitch D21, and the density of the pitch D11 is different from that of the pitch D21, so that the locking assembly 130 may include screws 132 with different pitch densities, so as to reduce the probability of the detecting device 100 shaking during the electrical detection to affect the detection result.
In an embodiment, the ratio of the current backflow lifted by the detection device 100 is, for example, 70%, but the invention is not limited thereto.
In one embodiment, the density of the pitch D11 is smaller than that of the pitch D21, and the pitch D11 is farther from the carrier 110 than the pitch D21. In other words, pitch D11 has a more sparse thread and pitch D21 has a more dense thread, and pitch D21 connects pitch D11 with end 1322. However, the present invention is not limited thereto, and in other embodiments, the screw may have other aspects of thread pitch design.
In one embodiment, the conductive structure 140 may include conductive paste to make electrical connection using longitudinal conductive properties of the conductive paste, but the present invention is not limited thereto, and the conductive structure 140 may be any suitable conductive material.
In some embodiments, the top surface 140a of the conductive structure 140 may be coplanar with the top surfaces of the plurality of pogo pins 120, so that the conductive terminals 12 of the semiconductor chip 10 may be reliably abutted to the conductive structure 140 during the subsequent inspection, and the floating proportion of the conductive terminals 12 is reduced for effective electrical connection, but the invention is not limited thereto.
In an embodiment, the conductive structure 140 may have a protruding portion 142 on the locking element 130, wherein an edge 142e of the protruding portion 142 may have a distance from an edge 130e of the locking element 130, but the invention is not limited thereto.
In one embodiment, the protruding portion 142 may be arched, in other words, the top surface 140a of the conductive structure 140 may be arched, but the present invention is not limited thereto.
In one embodiment, the locking assembly 130 may further include a spacer 134 and a threaded sleeve 136 stacked on the head 1321, with a portion of the conductive structure 140 located between the spacer 134 and the head 1321. Further, as shown in fig. 1A, 1B, 1D and 1E, the spacer 134 and the threaded sleeve 136 may have a first hollow portion 1341 and a second hollow portion 1361, respectively, and the conductive structure 140 may be extruded from the first hollow portion 1341 and the second hollow portion 1361, but the invention is not limited thereto.
In an embodiment, the spacer 134 may be located between the threaded sleeve 136 and a portion of the conductive structure 140 to reduce friction between the threaded sleeve 136 and the conductive structure 140 when the threaded sleeve 136 and the screw 132 are locked together, thereby damaging the conductive structure 140, but the invention is not limited thereto.
In one embodiment, the top 136a of the threaded sleeve 136 may have a removal hole 1362 to facilitate subsequent repair or replacement by a corresponding fixture (not shown) to separate the threaded sleeve 136 from the screw 132, but the invention is not limited thereto.
In this embodiment, the locking assembly 130 may further include a nut 138. The nut 138 may be disposed through the end 1322 of the screw 132 and disposed on the second surface 110b. Furthermore, the inspection device 100 can be used to reflow the current of the semiconductor chip 10 to the ground pad 114 through the conductive structure 140, the screw 132 and the nut 138, and the current flows as shown by the arrows in fig. 1A, so that the warpage phenomenon can be reduced and the current reflow path can be improved, the current reflow ratio can be improved, and the power integrity/signal integrity performance can be improved.
In this embodiment, the detection device 100 further includes a support plate 160. The support plate 160 may be disposed on the second surface 110b, wherein the screw 132 may be disposed through the support plate 160, and the support plate 160 may include a conductive material. The conductive material may be any suitable material, and the present invention is not limited thereto. Furthermore, the inspection device 100 can be used to reflow the current of the semiconductor chip 10 to the ground pad 114 through the conductive structure 140, the screws 132, 138, the supporting plate 160, and the current flows as shown by the arrows in fig. 1A, so that the warpage phenomenon can be reduced and the current reflow path can be improved, the current reflow ratio can be improved, and the power integrity/signal integrity performance can be improved.
In one embodiment, the warpage phenomenon of the inspection device is more pronounced when the semiconductor chip 10 is a large-sized package (e.g., 60 mm x60 mm or more), so that the inspection device 100 can be used to inspect the large-sized packaged semiconductor chip 10.
In an embodiment, the orthographic projection of the conductive structure 140 on the carrier 110 may overlap the ground pad 114, but the invention is not limited thereto.
In an embodiment, the front projection of the locking assembly 130 on the carrier 110 may overlap the grounding pad 114, but the invention is not limited thereto.
In one embodiment, the conductive structure 140 may be in direct contact with the screw 132, but the present invention is not limited thereto.
It should be noted that, the following embodiments use the element numbers and part of the content of the above embodiments, where the same or similar numbers are used to denote the same or similar elements, and descriptions of the same technical content are omitted, and reference may be made to the foregoing embodiments for descriptions of omitted parts, and the following embodiments are not repeated.
Fig. 2 is a schematic perspective view of a screw of a locking assembly of a detecting device according to another embodiment of the invention. Referring to fig. 2, compared to the detecting device 100, the density of the thread pitch D22 of the screw 232 of the detecting device of the present embodiment is smaller than that of the thread pitch D12, and the thread pitch D22 is closer to the carrier 110 than the thread pitch D12, in other words, the thread pitch D12 has denser threads, and the thread pitch D22 has thinner threads, and the thread pitch D22 connects the thread pitch D12 and the end 2322, but the present invention is not limited thereto.
In summary, the detection device of the present invention has the conductive structure, part of the conductive structure can be embedded into the locking component, and the conductive structure and the locking component are electrically connected with the grounding pad, so that the current of the semiconductor chip can flow back to the grounding pad through the conductive structure and the locking component during the subsequent detection, thereby reducing the warpage phenomenon, improving the current backflow path, increasing the current backflow ratio, and having better power integrity/signal integrity performance. In addition, the locking assembly can comprise screws with different screw pitch densities, so that the probability of influence on a detection result caused by shaking of the detection device during electrical detection is reduced.
It should be noted that the above embodiments are merely for illustrating the technical solution of the present invention and not for limiting the same, and although the present invention has been described in detail with reference to the above embodiments, it should be understood by those skilled in the art that the technical solution described in the above embodiments may be modified or some or all of the technical features may be equivalently replaced, and these modifications or substitutions do not make the essence of the corresponding technical solution deviate from the scope of the technical solution of the embodiments of the present invention.
Claims (10)
1. A test apparatus for testing a semiconductor chip, comprising:
The carrier plate is provided with a through hole and a grounding pad corresponding to the through hole, wherein the carrier plate is provided with a first surface and a second surface opposite to the first surface, the through hole penetrates from the first surface to the second surface, and the grounding pad is arranged on the second surface;
a plurality of retractable probes arranged in parallel on the first surface of the carrier plate;
A locking assembly passing through the through hole, wherein the locking assembly comprises a screw, the head of the screw has a first screw pitch and a second screw pitch, the density of the first screw pitch is different from that of the second screw pitch, and
The conductive structure is partially embedded in the locking assembly, and the conductive structure, the locking assembly, the semiconductor chip and the grounding pad are electrically connected.
2. The detection device of claim 1, wherein the density of the first pitch is less than the density of the second pitch, the first pitch being farther from the carrier than the second pitch.
3. The detection device of claim 1, wherein the density of the first pitch is less than the density of the second pitch, the first pitch being closer to the carrier than the second pitch.
4. The device of claim 1, wherein the conductive structure comprises a conductive gel.
5. The test device of claim 1, wherein a top surface of the conductive structure is coplanar with a top surface of the plurality of pogo pins.
6. The test device of claim 1, wherein the locking assembly further comprises a spacer and a threaded sleeve stacked on the head, and wherein a portion of the conductive structure is located between the spacer and the head.
7. The device of claim 6, wherein the spacer and the threaded sleeve have a first hollowed-out portion and a second hollowed-out portion, respectively, and the conductive structure is extruded from the first hollowed-out portion and the second hollowed-out portion.
8. The device of claim 1, wherein the locking assembly further comprises a nut disposed through an end of the screw opposite the head and disposed on the second surface.
9. The device of claim 1, further comprising a support plate disposed on the second surface, wherein the screw is threaded through the support plate, the support plate comprising a conductive material.
10. A detection device for detecting a semiconductor chip, wherein the detection device comprises:
The carrier plate is provided with a through hole and a grounding pad corresponding to the through hole, wherein the carrier plate is provided with a first surface and a second surface opposite to the first surface, the through hole penetrates from the first surface to the second surface, and the grounding pad is arranged on the second surface;
a plurality of retractable probes arranged in parallel on the first surface of the carrier plate;
A locking assembly passing through the through hole, wherein the locking assembly comprises a screw, the head of the screw has a first screw pitch and a second screw pitch, the density of the first screw pitch is different from that of the second screw pitch, and
The conductive structure is arranged on the locking assembly, and the detection device is used for reflowing the current of the semiconductor chip to the grounding pad through the conductive structure and the locking assembly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011179343.0A CN114429916B (en) | 2020-10-29 | 2020-10-29 | Detection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011179343.0A CN114429916B (en) | 2020-10-29 | 2020-10-29 | Detection device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114429916A CN114429916A (en) | 2022-05-03 |
| CN114429916B true CN114429916B (en) | 2025-07-22 |
Family
ID=81309196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011179343.0A Active CN114429916B (en) | 2020-10-29 | 2020-10-29 | Detection device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114429916B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101105507A (en) * | 2006-07-10 | 2008-01-16 | 东京毅力科创株式会社 | Probe card |
| CN111751691A (en) * | 2019-03-11 | 2020-10-09 | 创意电子股份有限公司 | Detection device and its probe base |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4063291B2 (en) * | 2005-08-05 | 2008-03-19 | 住友電気工業株式会社 | Wafer holder for wafer prober and wafer prober equipped with the same |
| US8378705B2 (en) * | 2008-02-29 | 2013-02-19 | Nhk Spring Co., Ltd. | Wiring substrate and probe card |
| WO2009130793A1 (en) * | 2008-04-25 | 2009-10-29 | 株式会社アドバンテスト | Test system and probe apparatus |
| JP2013120070A (en) * | 2011-12-06 | 2013-06-17 | Shinko Electric Ind Co Ltd | Probe card |
| CN205007011U (en) * | 2015-09-28 | 2016-02-03 | 广东施泰宝医疗科技有限公司 | Pedicle of vertebral arch screw of special customization |
| TWI662662B (en) * | 2018-02-09 | 2019-06-11 | 力成科技股份有限公司 | Chip package structure and manufacturing method thereof |
-
2020
- 2020-10-29 CN CN202011179343.0A patent/CN114429916B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101105507A (en) * | 2006-07-10 | 2008-01-16 | 东京毅力科创株式会社 | Probe card |
| CN111751691A (en) * | 2019-03-11 | 2020-10-09 | 创意电子股份有限公司 | Detection device and its probe base |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114429916A (en) | 2022-05-03 |
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