CN114420661B - Integrated circuit packaging structure, packaging method, integrated circuit system and electronic equipment - Google Patents
Integrated circuit packaging structure, packaging method, integrated circuit system and electronic equipment Download PDFInfo
- Publication number
- CN114420661B CN114420661B CN202210308497.8A CN202210308497A CN114420661B CN 114420661 B CN114420661 B CN 114420661B CN 202210308497 A CN202210308497 A CN 202210308497A CN 114420661 B CN114420661 B CN 114420661B
- Authority
- CN
- China
- Prior art keywords
- capacitor
- integrated circuit
- area
- power supply
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, the devices being individual devices of subclass H10D or integrated devices of class H10
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
- H01L2224/171—Disposition
- H01L2224/1712—Layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
Description
技术领域technical field
本说明书涉及半导体技术领域,更具体地说,涉及一种集成电路封装结构、封装方法、集成电路系统及电子设备。This specification relates to the field of semiconductor technology, and more particularly, to an integrated circuit packaging structure, a packaging method, an integrated circuit system, and an electronic device.
背景技术Background technique
随着半导体技术的不断发展,单个集成电路上容纳的元件数目越来越多,这对于集成电路封装结构提出了更高的要求。With the continuous development of semiconductor technology, the number of components accommodated on a single integrated circuit is increasing, which puts forward higher requirements for the packaging structure of the integrated circuit.
在各类集成电路封装结构中,球栅阵列(Ball Grid Array,BGA)封装结构由于具有更小的体积、更好的散热性能和电性能等特点,体现出对大规模集成电路(Large ScaleIntegration, LSI)或超大规模集成电路(Very Large Scale Integration Circuit,VLSI)的较好的适配性。Among all kinds of integrated circuit packaging structures, the Ball Grid Array (BGA) packaging structure has the characteristics of smaller volume, better heat dissipation performance and electrical performance, etc. LSI) or very large scale integrated circuit (Very Large Scale Integration Circuit, VLSI) better adaptability.
但随着集成电路集成度的进一步提高,有必要对集成电路封装结构的性能进行优化。However, with the further improvement of integrated circuit integration, it is necessary to optimize the performance of the integrated circuit packaging structure.
发明内容SUMMARY OF THE INVENTION
有鉴于此,本说明书实施例致力于提供一种集成电路封装结构、封装方法、集成电路系统及电子设备,以实现优化集成电路封装结构的性能的目的。In view of this, the embodiments of the present specification aim to provide an integrated circuit packaging structure, a packaging method, an integrated circuit system, and an electronic device, so as to achieve the purpose of optimizing the performance of the integrated circuit packaging structure.
第一方面,提供了一种集成电路封装结构,包括:In a first aspect, an integrated circuit packaging structure is provided, including:
第一基板,所述第一基板包括第一侧和与所述第一侧相对的第二侧,所述第一侧包括第一区域和围绕所述第一区域的第二区域;a first substrate including a first side and a second side opposite the first side, the first side including a first region and a second region surrounding the first region;
球栅阵列,所述球栅阵列包括多个分布于所述第一侧的接触焊球,分布于所述第一区域中的所述接触焊球的密度小于分布于所述第二区域中的接触焊球的密度;A ball grid array, the ball grid array includes a plurality of contact solder balls distributed on the first side, and the density of the contact solder balls distributed in the first area is smaller than that of the contact solder balls distributed in the second area Density of contact solder balls;
位于所述第二侧的集成电路部件;an integrated circuit component located on the second side;
第一电容,所述第一电容设置于所述第一区域中,所述第一电容与至少两个所述接触焊球连接,以与所述集成电路部件电连接。a first capacitor, the first capacitor is disposed in the first region, and the first capacitor is connected to at least two of the contact solder balls to be electrically connected to the integrated circuit component.
第一电容通过与至少两个接触焊球的连接(具体地,第一电容通过焊盘与第一基板连接,同时通过第一基板上的走线与至少两个接触焊球连接),实现与集成电路部件的电连接,使得第一电容可以在集成电路部件的核心电源出现波动时,为核心电源提供能量,减少或消除核心电源的波动,优化了集成电路封装结构的性能。另外,所述球栅阵列包括的多个接触焊球在第一基板的第一区域中的设置密度小于在第二区域中的设置密度,使得第一区域中有更多的空间来设置第一电容,增加了第一电容的可设置数量,使得第一电容可以更好地发挥对核心电源的稳压功能。The first capacitor is connected to at least two contact solder balls (specifically, the first capacitor is connected to the first substrate through the pad, and is connected to the at least two contact solder balls through the traces on the first substrate), so as to realize the connection with the first capacitor. The electrical connection of the integrated circuit components enables the first capacitor to provide energy for the core power supply when the core power supply of the integrated circuit component fluctuates, reduces or eliminates the fluctuation of the core power supply, and optimizes the performance of the integrated circuit packaging structure. In addition, the arrangement density of the plurality of contact solder balls included in the ball grid array in the first area of the first substrate is smaller than that in the second area, so that there is more space in the first area to arrange the first area. The capacitor increases the settable number of the first capacitor, so that the first capacitor can better exert the function of regulating the core power supply.
在一种可行的实现方式中,所述第一区域的面积与所述第一区域和第二区域的面积之和的比值的取值范围为10%~20%。In a feasible implementation manner, the value of the ratio of the area of the first region to the sum of the areas of the first region and the second region ranges from 10% to 20%.
发明人经过研究发现,将第一区域的面积与第一区域和第二区域的面积之和的比值限定在10%~20%之间,可以在提供一定区域用于设置第一电容,从而满足提高核心电源稳定性的基础上,避免第一基板在与其他封装基板封装后由于接触焊球的焊接应力而导致的基板翘曲。Through research, the inventor found that the ratio of the area of the first region to the sum of the areas of the first region and the second region is limited between 10% and 20%, and a certain area can be provided for setting the first capacitor, so as to satisfy the On the basis of improving the stability of the core power supply, the warpage of the substrate caused by the soldering stress of the contacting solder balls after the first substrate is packaged with other packaging substrates is avoided.
在一种可行的实现方式中,分布于所述第一区域中的所述接触焊球的密度为零。In a feasible implementation manner, the density of the contact solder balls distributed in the first region is zero.
由于第一区域中不用于设置接触焊球,为第一电容提供了较大的空间,第一,提高了第一电容的设置便利性。第二,也是由于第一区域中没有接触焊球,一定程度上降低了第一电容在设置过程中与相邻的接触焊球误接触的可能,提高了集成电路封装结构的制备良率。第三,由于第一区域中全部用于设置第一电容,使得在相同尺寸的第一区域中可以设置较多数量的第一电容,增加作为核心电源储能电容的电容量,较大电容量的储能电容可以为集成电路部件的核心电源提供较好的稳压功能,提高系统稳定性。Since the first area is not used for arranging contact solder balls, a larger space is provided for the first capacitor. First, the convenience of arranging the first capacitor is improved. Second, because there are no contact solder balls in the first region, the possibility that the first capacitor is in wrong contact with the adjacent contact solder balls during the setting process is reduced to a certain extent, and the fabrication yield of the integrated circuit packaging structure is improved. Third, since all the first areas are used to set the first capacitors, a larger number of first capacitors can be set in the first area of the same size, increasing the capacitance as the core power storage capacitor, and the larger the capacitance. The energy storage capacitor can provide a better voltage regulation function for the core power supply of the integrated circuit components and improve the system stability.
在一种可行的实现方式中,所述集成电路部件包括核心电源;In a possible implementation, the integrated circuit component includes a core power supply;
所述第一区域在所述第一侧的正投影与所述核心电源在所述第一侧的正投影至少部分交叠。The orthographic projection of the first region on the first side at least partially overlaps the orthographic projection of the core power supply on the first side.
这样设置在交叠区域中的第一电容(特别是处于与核心电源有交叠区域中的第一电容)与核心电源的去耦路径相对较短,有利于提升处于交叠区域中的第一电容的电容滤波效果,保证第一电容起到良好的电压稳定效果。In this way, the decoupling path between the first capacitor (especially the first capacitor in the region overlapping with the core power supply) and the core power supply disposed in the overlapping region is relatively short, which is beneficial to improve the first capacitor in the overlapping region. The capacitance filtering effect of the capacitor ensures that the first capacitor has a good voltage stabilization effect.
在一种可行的实现方式中,所述第一区域在所述第一侧的正投影与所述核心电源在所述第一侧的正投影重合。In a feasible implementation manner, the orthographic projection of the first region on the first side coincides with the orthographic projection of the core power supply on the first side.
这样设置在第一区域中的第一电容与核心电源之间的距离均较小,即设置在第一区域中的第一电容的去耦路径均相对较短,有利于提升第一电容的滤波效果,保证第一电容可以起到良好的电压稳定效果。In this way, the distance between the first capacitor arranged in the first area and the core power supply is relatively small, that is, the decoupling paths of the first capacitor arranged in the first area are relatively short, which is beneficial to improve the filtering of the first capacitor. Therefore, it is ensured that the first capacitor can play a good voltage stabilization effect.
在一种可行的实现方式中,所述第一电容的数量为多个,多个所述第一电容以阵列方式在所述第一区域中排布,同一行中的所述第一电容的朝向相同。In a feasible implementation manner, the number of the first capacitors is multiple, the multiple first capacitors are arranged in the first region in an array manner, and the first capacitors in the same row are arranged in an array manner. facing the same.
通常第一电容包括电容本体、第一极和第二极,由于连接第一极的互联走线不能与连接第二极的互联走线交叉,以避免将第一电容短路,因此如此设置的第一电容使得连接第一极的互联走线可以均在第一电容的一侧布置,连接第二极的互联走线可以均在第一电容的另一侧布置,有利于简化互联走线的设计难度,降低将第一电容短路的风险。Usually, the first capacitor includes a capacitor body, a first pole and a second pole. Since the interconnection trace connecting the first pole cannot cross the interconnection trace connecting the second pole, so as to avoid short-circuiting the first capacitor, the thus-configured No. A capacitor enables the interconnection lines connected to the first pole to be arranged on one side of the first capacitor, and the interconnection lines connected to the second pole can be arranged on the other side of the first capacitor, which is beneficial to simplify the design of interconnection lines Difficulty, reducing the risk of short-circuiting the first capacitor.
在一种可行的实现方式中,同一行中的所述第一电容的朝向与行方向垂直,同一行中的所述第一电容的第一极与所述球栅阵列中一行接触焊球中的至少一个接触焊球连接。In a feasible implementation manner, the orientation of the first capacitors in the same row is perpendicular to the row direction, and the first electrodes of the first capacitors in the same row are in contact with the solder balls in a row of the ball grid array. at least one of the contact solder ball connections.
同一行中的所述第一电容的第二极与所述球栅阵列中另一行接触焊球中的至少一个接触焊球连接。The second poles of the first capacitors in the same row are connected to at least one contact solder ball in another row of the ball grid array.
同样由于连接第一极的互联走线不能与连接第二极的互联走线交叉,以避免将第一电容短路,因此将连接第一极与第二极的接触焊球设置在不同行,有利于降低连接第一极的互联走线与连接第二极的互联走线短路的风险,有利于简化互联走线的设计难度,降低第一电容短路的风险。Also, since the interconnecting traces connecting the first pole cannot cross the interconnecting traces connecting the second pole, so as to avoid short-circuiting the first capacitor, the contact solder balls connecting the first pole and the second pole are arranged in different rows. It is beneficial to reduce the risk of short circuit between the interconnection line connecting the first pole and the interconnection line connecting to the second pole, simplify the design difficulty of the interconnection line, and reduce the risk of short circuit of the first capacitor.
在一种可行的实现方式中,所述第一基板还包括:位于所述第一区域中的凹陷区。In a feasible implementation manner, the first substrate further includes: a recessed area located in the first region.
所述多个电容设置于所述凹陷区中。The plurality of capacitors are disposed in the recessed area.
将第一电容设置于凹陷区中有助于增加第一电容在纵向(垂直于第一基板第一侧和第二侧的方向)上的空间,使得在第一基板上放置第一电容时,操作空间更大,有利于增加放置第一电容的成功率,从而增加整个集成电路封装结构的制备良率。Disposing the first capacitor in the recessed area helps to increase the space of the first capacitor in the longitudinal direction (the direction perpendicular to the first side and the second side of the first substrate), so that when the first capacitor is placed on the first substrate, The larger operating space is beneficial to increase the success rate of placing the first capacitor, thereby increasing the fabrication yield of the entire integrated circuit package structure.
在一种可行的实现方式中,所述第一电容的高度小于所述接触焊球的高度。In a feasible implementation manner, the height of the first capacitor is smaller than the height of the contact solder ball.
由于球栅阵列还需要与印制电路板(Printed Circuit Boards,PCB)等连接,因此第一电容还需要具有低高度的特点,第一电容的高度小于接触焊球的高度,以保证接触焊球与其他封装基板的良好电接触,避免由于第一电容过高而导致接触焊球与其他封装基板的电接触异常的问题。Since the ball grid array also needs to be connected to a printed circuit board (Printed Circuit Boards, PCB), the first capacitor also needs to have a low height, and the height of the first capacitor is smaller than the height of the contact solder balls to ensure the contact solder balls. Good electrical contact with other packaging substrates avoids the problem of abnormal electrical contact between the contact solder balls and other packaging substrates due to excessively high first capacitance.
第二方面,提供了一种集成电路封装结构,包括:In a second aspect, an integrated circuit packaging structure is provided, including:
第一基板,所述第一基板包括封装侧和与所述封装侧相对的电路侧,所述电路侧用于设置集成电路部件,所述封装侧包括去耦区域和围绕所述去耦区域的焊接区域,所述去耦区域用于提供第一电容的设置空间,所述第一电容用于降低或消除所述集成电路部件的核心电源波动。A first substrate, the first substrate includes a package side and a circuit side opposite the package side, the circuit side is used for arranging integrated circuit components, the package side includes a decoupling area and a circuit side surrounding the decoupling area The welding area, the decoupling area is used to provide a space for the arrangement of the first capacitor, and the first capacitor is used to reduce or eliminate the fluctuation of the core power supply of the integrated circuit component.
在第一基板的封装侧上设置了专门的去耦区域,以为和集成电路部件电连接的第一电容提供相应的设置空间,在使得第一电容消除或降低所述集成电路部件的核心电源波动的前提下,降低了第一电容的设置难度,同时专门的去耦区域也有利于放置相对较多数量的第一电容,有利于优化去耦区域中第一电容对核心电源波动的抑制能力。A special decoupling area is provided on the package side of the first substrate to provide a corresponding setting space for the first capacitor electrically connected to the integrated circuit component, so that the first capacitor can eliminate or reduce the fluctuation of the core power supply of the integrated circuit component. Under the premise of reducing the difficulty of setting the first capacitor, the dedicated decoupling area is also conducive to placing a relatively large number of first capacitors, which is conducive to optimizing the ability of the first capacitor in the decoupling area to suppress fluctuations in the core power supply.
第三方面,提供了一种集成电路系统,包括:如上述任一项所述的集成电路封装结构,所述集成电路封装结构包括球栅阵列;In a third aspect, an integrated circuit system is provided, including: the integrated circuit packaging structure according to any one of the above, wherein the integrated circuit packaging structure includes a ball grid array;
印制电路板,所述印制电路板包括第三侧和第四侧,所述第三侧包括至少一个耦合区域,所述耦合区域与所述集成电路封装结构的球栅阵列耦合。A printed circuit board including a third side and a fourth side, the third side including at least one coupling region, the coupling region being coupled to a ball grid array of the integrated circuit package structure.
第二电容,所述第二电容设置于所述第四侧,所述第二电容在所述第四侧的正投影与所述球栅阵列的接触焊球在所述第四侧的正投影互不交叠。A second capacitor, the second capacitor is disposed on the fourth side, the orthographic projection of the second capacitor on the fourth side and the orthographic projection of the contact balls of the ball grid array on the fourth side do not overlap each other.
在核心电源出现波动时,与第一电容类似的,第二电容可以为核心电源提供能量,降低核心电源电压的波动,提高核心电源电压的稳定性。When the core power supply fluctuates, similar to the first capacitor, the second capacitor can provide energy for the core power supply, reduce the fluctuation of the core power supply voltage, and improve the stability of the core power supply voltage.
在一种可行的实现方式中,所述第一电容的封装尺寸小于所述第二电容的封装尺寸,或,所述集成电路封装结构的第一电容的容量小于所述第二电容的容量。In a feasible implementation manner, the package size of the first capacitor is smaller than the package size of the second capacitor, or the capacity of the first capacitor of the integrated circuit package structure is smaller than the capacity of the second capacitor.
当第一电容的封装尺寸小于第二电容的封装尺寸,第一电容的容量小于所述第二电容的容量时,第一电容可以在中频率(例如100MHz)或高频率为核心电源提供较好的能量补充作用,而第二电容可以在低频率为核心电源提供较好的能量补充作用,第一电容和第二电容相互补充,保证核心电源在全频率段(特别是在低频率和中频率段)能够稳定运行,提高系统稳定性。When the package size of the first capacitor is smaller than the package size of the second capacitor, and the capacity of the first capacitor is smaller than the capacity of the second capacitor, the first capacitor can provide a better core power supply at a medium frequency (for example, 100MHz) or a high frequency The second capacitor can provide a better energy supplement for the core power supply at low frequencies. The first capacitor and the second capacitor complement each other to ensure that the core power supply operates in the full frequency range (especially at low and medium frequencies). segment) can run stably and improve system stability.
在一种可行的实现方式中,所述第四侧包括:第三区域,所述第三区域在所述第一侧的正投影与所述集成电路封装结构中第一电容的设置区域在所述集成电路封装结构的第一基板的第一侧的正投影至少部分重叠。In a feasible implementation manner, the fourth side includes: a third area, and the orthographic projection of the third area on the first side is in the same position as the area where the first capacitor is arranged in the integrated circuit package structure. The orthographic projections of the first side of the first substrate of the integrated circuit package structure at least partially overlap.
所述第二电容设置于所述第三区域中。The second capacitor is disposed in the third region.
由于第一电容的设置区域(例如第一区域)中接触焊球的密度较小或不用于设置接触焊球,可以增加重叠区域中第二电容的设置自由度,无需考虑第二电容与接触焊球之间的位置关系。Since the density of contact solder balls in the setting area of the first capacitor (for example, the first area) is small or not used for setting contact solder balls, the degree of freedom of setting the second capacitor in the overlapping area can be increased, without considering the relationship between the second capacitor and the contact solder ball. positional relationship between the balls.
在一种可行的实现方式中,所述第二电容的数量为多个,多个所述第二电容以阵列方式排布。In a feasible implementation manner, the number of the second capacitors is multiple, and the multiple second capacitors are arranged in an array.
在一列所述第二电容中,所述第二电容的朝向与行方向平行,且所述第二电容的第一极朝向预设边,所述预设边包括所述第三区域外沿中距离所述第二电容最近的一条竖直边。In a row of the second capacitors, the direction of the second capacitors is parallel to the row direction, and the first pole of the second capacitors faces a predetermined side, and the predetermined side includes the middle of the outer edge of the third region. A vertical edge closest to the second capacitor.
如此设置的第二电容的第一极全部朝向“外侧”(即朝向预设边),使得与核心电源连接的第一极的朝向相同,有利于避免与第一极和第二极连接的走线交叉,简化在第四侧上的走线设计,且第一极均朝向外侧,有利于增加与第一极连接的走线的布置空间,降低设计难度,提高制备良率。The first poles of the second capacitors set in this way are all facing the "outside" (that is, toward the preset side), so that the first poles connected to the core power supply are oriented in the same direction, which is beneficial to avoid the connection between the first pole and the second pole. The lines are crossed, which simplifies the design of the lines on the fourth side, and the first poles all face the outside, which is beneficial to increase the layout space of the lines connected to the first poles, reduce the design difficulty, and improve the fabrication yield.
在一种可行的实现方式中,所述集成电路封装结构还包括:第一电源端子、第二电源端子和第三电容。In a feasible implementation manner, the integrated circuit package structure further includes: a first power supply terminal, a second power supply terminal and a third capacitor.
所述第三侧包括至少两个所述耦合区域,所述第三电容、所述第一电源端子和所述第二电源端子设置于相邻所述耦合区域之间,所述第三电容的第一极与所述第一电源端子连接,所述第三电容的第二极与所述第二电源端子连接。The third side includes at least two of the coupling regions, the third capacitor, the first power supply terminal and the second power supply terminal are arranged between adjacent coupling regions, and the third capacitor is The first pole is connected to the first power supply terminal, and the second pole of the third capacitor is connected to the second power supply terminal.
在印制电路板的第三侧设置的第三电容,使得第三电容可以在系统电源信号出现波动时,为系统电源提供能量,特别是对于低频电源信号(例如,小于或等于30MHz的电源信号),第三电容可以起到较好的去耦作用,提高系统电源的稳定性。The third capacitor is arranged on the third side of the printed circuit board, so that the third capacitor can provide energy for the system power supply when the system power supply signal fluctuates, especially for low frequency power supply signals (for example, power signals less than or equal to 30MHz) ), the third capacitor can play a better decoupling role and improve the stability of the system power supply.
第四方面,提供了一种集成电路封装方法,包括:In a fourth aspect, an integrated circuit packaging method is provided, including:
提供第一基板,所述第一基板包括第一侧和与所述第一侧相对的第二侧,所述第一侧包括第一区域和围绕所述第一区域的第二区域;providing a first substrate including a first side and a second side opposite the first side, the first side including a first region and a second region surrounding the first region;
在所述第二侧形成集成电路部件;forming integrated circuit components on the second side;
在所述第一侧形成球栅阵列,所述球栅阵列包括多个接触焊球,分布于所述第一区域中的所述接触焊球的密度小于分布于所述第二区域中的接触焊球的密度;A ball grid array is formed on the first side, the ball grid array includes a plurality of contact solder balls, and the density of the contact solder balls distributed in the first region is less than that of the contact solder balls distributed in the second region The density of solder balls;
在第一区域形成第一电容,所述第一电容与至少两个所述接触焊球连接,以与所述集成电路部件电连接。A first capacitor is formed in the first region, and the first capacitor is connected to at least two of the contact solder balls for electrical connection with the integrated circuit component.
第五方面,提供了一种电子设备,包括如上述任一项所述的集成电路系统。In a fifth aspect, an electronic device is provided, including the integrated circuit system according to any one of the above.
第六方面,提供了一种服务器芯片,包括如上述任一项所述的集成电路系统。In a sixth aspect, a server chip is provided, including the integrated circuit system described in any one of the above.
本说明书实施例提供的集成电路封装结构包括第一基板、球栅阵列、集成电路部件和第一电容,其中,第一电容通过焊盘与第一基板连接,同时通过第一基板上的走线与至少两个接触焊球连接,实现第一电容与集成电路部件的电连接,使得第一电容可以在集成电路部件的核心电源出现波动时,为核心电源提供能量,减少或消除核心电源的波动,优化了集成电路封装结构的性能。The integrated circuit package structure provided by the embodiments of this specification includes a first substrate, a ball grid array, an integrated circuit component, and a first capacitor, wherein the first capacitor is connected to the first substrate through a pad, and at the same time passes through the traces on the first substrate Connect with at least two contact solder balls to realize the electrical connection between the first capacitor and the integrated circuit component, so that the first capacitor can provide energy for the core power supply when the core power supply of the integrated circuit component fluctuates, and reduce or eliminate the fluctuation of the core power supply , optimizes the performance of the integrated circuit package structure.
另外,所述球栅阵列包括的多个接触焊球在第一基板的第一区域中的设置密度小于在第二区域中的设置密度,使得第一区域中有更多的空间来设置第一电容,增加了第一电容的可设置数量,使得第一电容可以更好地发挥对核心电源的稳压功能。In addition, the arrangement density of the plurality of contact solder balls included in the ball grid array in the first area of the first substrate is smaller than that in the second area, so that there is more space in the first area to arrange the first area. The capacitor increases the settable number of the first capacitor, so that the first capacitor can better exert the function of regulating the core power supply.
附图说明Description of drawings
图1为本说明书实施例提供的一种集成电路封装结构的示意图。FIG. 1 is a schematic diagram of an integrated circuit packaging structure according to an embodiment of the present specification.
图2为图1的俯视图。FIG. 2 is a top view of FIG. 1 .
图3为图2中沿AA’线的剖面结构示意图。Fig. 3 is a schematic diagram of a cross-sectional structure along the line AA' in Fig. 2 .
图4为本说明书实施例提供的一种第一基板第一侧的示意图。FIG. 4 is a schematic diagram of a first side of a first substrate according to an embodiment of the present specification.
图5为本说明书实施例提供的第一电容与接触焊球的连接示意图。FIG. 5 is a schematic diagram of a connection between a first capacitor and a contact solder ball according to an embodiment of the present specification.
图6为本说明书实施例提供的另一种第一基板第一侧的示意图。FIG. 6 is a schematic diagram of a first side of another first substrate according to an embodiment of the present specification.
图7为图6中沿BB’线的剖面结构示意图。Fig. 7 is a schematic cross-sectional structure diagram along the line BB' in Fig. 6 .
图8为本说明书实施例提供的又一种第一基板第一侧的示意图。FIG. 8 is a schematic diagram of a first side of still another first substrate according to an embodiment of the present specification.
图9为图8中沿CC’线的剖面结构示意图。Fig. 9 is a schematic cross-sectional structure diagram taken along the line CC' in Fig. 8 .
图10为本说明书实施例提供的一种集成电路封装结构的剖面结构示意图。FIG. 10 is a schematic cross-sectional structural diagram of an integrated circuit package structure provided by an embodiment of the present specification.
图11为本说明书实施例提供的一种第一基板第一侧的部分区域放大示意图。FIG. 11 is an enlarged schematic diagram of a partial area of a first side of a first substrate according to an embodiment of the present specification.
图12为本说明书实施例提供的一种集成电路系统的剖面结构示意图。FIG. 12 is a schematic cross-sectional structure diagram of an integrated circuit system according to an embodiment of the present specification.
图13为本说明书实施例提供的另一种集成电路系统的剖面结构示意图。FIG. 13 is a schematic cross-sectional structure diagram of another integrated circuit system according to an embodiment of the present specification.
图14为本说明书实施例提供的一种印制电路板的第四侧的部分区域放大示意图。FIG. 14 is an enlarged schematic diagram of a partial area of a fourth side of a printed circuit board according to an embodiment of the present specification.
图15为本说明书实施例提供的一种集成电路封装结构的剖面结构示意图。FIG. 15 is a schematic cross-sectional structural diagram of an integrated circuit package structure provided by an embodiment of the present specification.
图16为本说明书实施例提供的一种集成电路封装方法的流程示意图。FIG. 16 is a schematic flowchart of an integrated circuit packaging method according to an embodiment of the present specification.
附图标记说明:Description of reference numbers:
10-集成电路封装结构;10- Integrated circuit packaging structure;
20-集成电路系统;20 - Integrated circuit system;
100-第一基板;100 - the first substrate;
101-第一侧;101 - first side;
102-第二侧;102 - second side;
1001-第一区域;1001 - the first area;
1002-第二区域;1002-Second area;
1001a-凹陷区;1001a - depression area;
110-接触焊球;110-contact solder ball;
110a-第一接触焊球;110a - the first contact solder ball;
110b-第二接触焊球;110b - the second contact solder ball;
120-第一电容;120 - the first capacitor;
121-第一电容的电容器主体;121 - the capacitor body of the first capacitor;
122-第一电容的第一极;122 - the first pole of the first capacitor;
123-第一电容的第二极;123 - the second pole of the first capacitor;
130-集成电路部件;130 - Integrated circuit components;
131-核心电源;131 - core power supply;
161-绝缘层;161 - insulating layer;
162-互联走线;162 - interconnection trace;
163-焊盘;163-pad;
140-印制电路板;140 - printed circuit board;
141-第三侧;141 - third side;
142-第四侧;142 - fourth side;
143-耦合区域;143 - coupling region;
144-互联层;144 - interconnect layer;
145-第三区域;145 - the third area;
1451-第三区域145的一条竖直边;1451 - a vertical edge of the
1452-第三区域145的另一条竖直边;1452 - another vertical edge of the
150-第二电容;150 - the second capacitor;
151-第二电容的第一极;151 - the first pole of the second capacitor;
152-第二电容的电容器主体;152 - the capacitor body of the second capacitor;
153-第二电容的第二极;153 - the second pole of the second capacitor;
171-第一电源端子;171 - the first power terminal;
172-第二电源端子;172 - the second power terminal;
173-第三电容;173 - the third capacitor;
202-封装侧;202-package side;
201-电路侧;201 - circuit side;
2021-去耦区域;2021-decoupling area;
2022-焊接区域。2022 - Welded area.
具体实施方式Detailed ways
本说明书参照作为理想化示例性附图的剖视图和/或平面图描述了示例性实施方式。在附图中,为了清楚,放大了层和区域的厚度。因此,可设想到由于例如制造技术和/或公差引起的相对于附图的形状的变动。因此,示例性实施方式不应解释为局限于本说明书示出的区域的形状,而是包括因例如制造而引起的形状偏差。例如,示为球形表面的接触焊球通常将具有椭圆的特征。因此,附图中所示的区域本质上是示意性的,且它们的形状并非旨在示出设备的区域的实际形状,并且并非旨在限制示例性实施方式的范围。This specification describes exemplary embodiments with reference to cross-sectional and/or plan views that are idealized exemplary drawings. In the drawings, the thickness of layers and regions are exaggerated for clarity. Accordingly, variations from the shape of the drawings due to, for example, manufacturing techniques and/or tolerances, are contemplated. Therefore, the exemplary embodiments should not be construed as limited to the shapes of the regions shown in this specification, but include deviations in shapes due to, for example, manufacturing. For example, a contact ball shown as a spherical surface will typically have elliptical features. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of example embodiments.
除非另外定义,本说明书实施例使用的技术术语或者科学术语应当为本说明书实施例所属领域内具有一般技能的人士所理解的通常意义。本说明书实施例使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性,而只是用来避免构成要素的混同而设置的。Unless otherwise defined, the technical or scientific terms used in the embodiments of the present specification shall have the usual meanings understood by those with ordinary skill in the art to which the embodiments of the present specification belong. The words "first", "second" and similar words used in the embodiments of the present specification do not indicate any order, quantity or importance, but are only provided to avoid confusion of constituent elements.
除非上下文另有要求,否则,在整个说明书中,术语“包括”被解释为开放、包含的意思,即为“包含,但不限于”。在说明书的描述中,术语“一个实施例”、“一些实施例”、“示例性实施例”、“示例”、“特定示例”或“一些示例”等旨在表明与该实施例或示例相关的特定特征、结构、材料或特性包括在本说明书的至少一个实施例或示例中。上述术语的示意性表示不一定是指同一实施例或示例。此外,所述的特定特征、结构、材料或特点可以以任何适当方式包括在任何一个或多个实施例或示例中。在描述一些实施例时,可能使用了“耦接”和“连接”及其衍伸的表达。例如,描述一些实施例时可能使用了术语“连接”以表明两个或两个以上部件彼此间有直接物理接触或电接触。又如,描述一些实施例时可能使用了术语“耦接”以表明两个或两个以上部件有直接物理接触或电接触。这里所公开的实施例并不必然限制于本说明书内容。Unless the context requires otherwise, throughout the specification, the term "comprising" is to be interpreted in an open, inclusive sense, ie, "including, but not limited to". In the description of the specification, the terms "one embodiment," "some embodiments," "exemplary embodiment," "example," "particular example," or "some examples" and the like are intended to indicate associations with the embodiments or examples A particular feature, structure, material or characteristic of is included in at least one embodiment or example of this specification. The schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials or characteristics described may be included in any suitable manner in any one or more embodiments or examples. In describing some embodiments, the expressions "coupled" and "connected" and their derivatives may be used. For example, the term "connected" may be used in describing some embodiments to indicate that two or more components are in direct physical or electrical contact with each other. As another example, the term "coupled" may be used in describing some embodiments to indicate that two or more components are in direct physical or electrical contact. The embodiments disclosed herein are not necessarily limited by the contents of this specification.
申请概述Application overview
随着集成电路技术的迅速发展,集成电路芯片对集成电路封装结构的信息传输能力的需求越来越高,焊点数量越来越密集,球栅阵列封装结构由于具有小体积、优良的散热性能和电性能的特点,使得同等尺寸的球栅阵列封装结构可以容纳更多的接触焊球,这些特点使得球栅阵列封装结构成为目前较为常用的封装形式。With the rapid development of integrated circuit technology, the demand of integrated circuit chips for the information transmission capacity of the integrated circuit packaging structure is getting higher and higher, and the number of solder joints is becoming more and more dense. The ball grid array packaging structure has small size and excellent heat dissipation performance. Due to the characteristics of the same size and electrical performance, the ball grid array package structure of the same size can accommodate more contact solder balls. These characteristics make the ball grid array package structure a more commonly used package form at present.
诸如专用集成电路(Application Specific Integrated Circuit,ASIC)和通用处理器的现代大型集成电路电路或超大型集成电路器件可以在高频率、高功率规格下工作。发明人研究发现,对于服务器等集成电路应用场合来说,芯片尺寸大,芯片工作时负载波动较大,当流向集成电路部件的电流急剧增加时,诸如当计算密集型过程或高并发过程开始时,电路中产生的电感效应会扰动核心电源电压(Core Positive Voltage Supply ,CVDD),由此产生的电源纹波可能导致集成电路无法正常工作。因此有必要提高集成电路芯片的电源稳定性。Modern LSI circuits or VLSI devices such as Application Specific Integrated Circuits (ASICs) and general purpose processors can operate at high frequency, high power specifications. The inventor's research has found that for integrated circuit applications such as servers, the chip size is large, and the load fluctuates greatly when the chip operates. When the current flowing to the integrated circuit components increases sharply, such as when a calculation-intensive process or a high-concurrency process starts. , the inductive effect generated in the circuit will disturb the core power supply voltage (Core Positive Voltage Supply, CVDD), and the resulting power supply ripple may cause the integrated circuit to not work properly. Therefore, it is necessary to improve the power supply stability of integrated circuit chips.
因此本说明书实施例提供了一种集成电路封装结构,以通过对集成电路封装结构的改进,实现减少或消除核心电源波动,优化集成电路封装结构的性能,提升集成电路的系统稳定性的目的。下面将结合本说明书实施例中的附图,对本说明书实施例中的技术方案进行描述。基于本说明书中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本说明书保护的范围。Therefore, the embodiments of this specification provide an integrated circuit packaging structure, so as to reduce or eliminate core power supply fluctuations, optimize the performance of the integrated circuit packaging structure, and improve the system stability of the integrated circuit by improving the integrated circuit packaging structure. The technical solutions in the embodiments of the present specification will be described below with reference to the accompanying drawings in the embodiments of the present specification. Based on the embodiments in this specification, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the protection scope of this specification.
示例性封装结构Exemplary Package Structure
本说明书的一个示例性实施例提供了一种集成电路封装结构,参考图1、图2和图3,图1示出了集成电路封装结构10的示意图,图2为图1的俯视图(即第一基板100第一侧101的示意图),图3为图2中沿AA’线的剖面结构示意图,所述集成电路封装结构10包括:An exemplary embodiment of the present specification provides an integrated circuit package structure. Referring to FIG. 1 , FIG. 2 and FIG. 3 , FIG. 1 shows a schematic diagram of the integrated
第一基板100,所述第一基板100包括第一侧101和与所述第一侧101相对的第二侧102,所述第一侧101包括第一区域1001和围绕所述第一区域1001的第二区域1002。第一基板100可以是硅或砷化镓等半导体材料基板,集成电路部件130可以采用掺杂、刻蚀、成膜等半导体工艺基于该第一基板100形成。所述第二区域1002围绕所述第一区域1001可以是如图2所示的完全包围,也可以是部分包围(例如第二区域1002围绕第一区域1001的三条边或两条边),本说明书对此并不做限定。A
球栅阵列,所述球栅阵列包括多个分布于所述第一侧的接触焊球110,分布于所述第一区域1001中的所述接触焊球110的密度小于分布于所述第二区域1002中的接触焊球110的密度。位于相同区域中的接触焊球110通常遵循同一标准的间隔规则,例如1.27mm或1.0mm的间距。球栅阵列中的一些接触焊球110电连接到集成电路部件130的核心电源,并且球栅阵列中的一些接触焊球110电连接到集成电路部件130的负电源输入(例如接地端)。集成电路部件130设置在与第一基板100的第一侧101相对的第二侧102上,球栅阵列中的一些接触焊球110将输入/输出信号连接到集成电路封装结构10。在不限制本说明书的情况下,球栅阵列中的接触焊球110形成的图案可以是正方形、矩形、圆形(参考图4,图4为本说明书一个实施例提供的第一基板100的第一侧101的示意图)、菱形或任何其他网格配置(Lattice Configuration)。在一些示例性实施例方式中,球栅阵列中的接触焊球110形成的图案还可以是非对称的,或者具有有限的对称性。接触焊球110的形状可以为球形,在这种情况下,接触焊球110也可称之为接触球。当然地,在本说明书的一些示例性实施例中,接触焊球110的形状还可以椭球型(参考图10)或者其他形状,本说明书对此并不做限定。接触焊球110的形成材料可以包括金属锡,形成工艺可以包括回流焊(Reflow Soldering)。A ball grid array, the ball grid array includes a plurality of
在该实施方式中,所述集成电路封装结构10包括第一电容120,所述第一电容120设置于所述第一区域1001中,所述第一电容120通过焊盘163与第一基板100上的互联走线162连接,再通过互联走线162与所述接触焊球110连接,以与所述集成电路部件130电连接,更具体地说,参考图5,图5为第一电容120与接触焊球110的连接示意图,第一电容120包括电容器主体121、第一极122和第二极123,该第一极122与电连接到核心电源的第一接触焊球110a连接,该第二极123与电连接到接地端的第二接触焊球110b相连接。当第一电容120为多个时,如此连接的多个第一电容120之间的连接关系为并联,而根据物理知识可知,并联的多个第一电容120的总电容之和为并联的各第一电容120的电容值之和。此外图5中还示出了位于第一侧101上的绝缘层161,该绝缘层161用于保护第一侧101上的互联走线162等元件免受水氧侵蚀,第一电容120的第一极122和第二极123分别通过焊盘163与不同的互联走线162连接,从而实现与第一接触焊球110a和第二接触焊球110b的电连接。In this embodiment, the integrated
集成电路部件130可以通过倒装的方式设置在第一基板100上,此时集成电路部件130上的信号触点通过金属凸块(bump)与第一基板100上的金属走线电连接。集成电路部件130是集成电路系统的主要负载,当负载电流不变或变化较小时,核心电源可以满足系统为负载提供稳定电压的要求,此时第一电容120两端电压与核心电源电压一致。而当系统的负载电流由于运算量、并发量剧烈变化等原因出现较大变化时,负载电流较大且快速的跳变会使得集成电路部件的核心电源电压出现明显的波动,而此时第一电容120作为储能元件可以为核心电源提供能量,从而减少或降低核心电源电压波动,起到稳压的效果。另外,由于第一基板100的第一侧101上的第一区域1001中的接触焊球110设置密度较小,为第一电容120提供了较大的空间,一方面提高了第一电容120在第一区域1001中的设置便利性,有利于降低集成电路封装结构10的制备难度,提高制备良率,另一方面提高了第一电容120在第一区域1001中的可设置数量,不难理解的是,较多数量的第一电容120可以为系统提供较大电容量的储能电容,只需很小的电压变化,较大电容量的储能电容就可以提供足够大的电流,满足负载瞬态电流的要求,保证核心电源电压的变化在容许的范围内,提高系统的稳定性。The
第一电容120可以为陶瓷电容(Ceramic Capacitor)器或硅电容器等具有结构紧凑、低等效电感(Equivalent Series Inductance,ESL)等特点的电容器。此外,由于球栅阵列还需要与印制电路板(Printed Circuit Boards,PCB)等其他封装基板连接,因此第一电容120还需要具有低高度的特点,结合图3和图5,即第一电容120的高度h小于接触焊球110的高度H,以保证接触焊球110与其他封装基板的良好电接触,避免由于第一电容120过高而导致接触焊球110与其他封装基板的电接触异常的问题。在本说明书的一些实施例中,第一电容120可以选用封装尺寸为0402或0201的电容,第一电容高度通常低于0.35mm,电容量小于2.2μF。当第一电容120选用陶瓷电容时,由于陶瓷电容在中频段(100MHz)附近的阻抗曲线低的特点,使得因负载波动引起的核心电压跌落就较小,从而可以对集成电路部件130核心电源的中频噪声起到良好的去耦效果。在图5所示的实施例中,接触焊球110的高度H是指接触焊球110距离第一侧101最远的一点与第一侧101表面之间的距离,相应的,第一电容120的高度h是指第一电容120距离第一侧101最远的一点与第一侧101表面之间的距离。当然地,在本说明书的其他示例性实施例中,接触焊球110的高度H还可以是指接触焊球110距离互联走线162最远一点与互联走线162之间的距离,第一电容120的高度h还可以是指第一电容120距离互联走线162最远一点与互联走线162之间的距离。总而言之,接触焊球110的高度与第一电容的高度的比较基准点(面)相同即可,本说明书在此不做穷举。The
在本说明书的一个示例性实施例中,参考图6并结合参考图2和图4,图6为第一基板100的第一侧101的示意图,在图2和图4中,分布于所述第一区域1001中的所述接触焊球110的密度为零,即第一区域1001中不用于设置接触焊球110,或者说球栅阵列的分布区域为第二区域1002。在本示例性实施例中,由于第一区域1001中不用于设置接触焊球110,为第一电容120提供了较大的空间,第一方面,提高了第一电容120的设置便利性。第二方面,也是由于第一区域1001中没有接触焊球110,一定程度上降低了第一电容120在设置过程中与相邻的接触焊球110误接触的可能,提高了集成电路封装结构10的制备良率。第三方面,由于第一区域1001中全部用于设置第一电容120,使得在相同尺寸的第一区域1001中可以设置较多数量的第一电容120,增加作为核心电源储能电容的电容量,与前文描述相似的,较大电容量的储能电容可以为集成电路部件130的核心电源提供较好的稳压功能,提高系统稳定性。而在图6中,第一区域1001中的所述接触焊球110的密度大于零,这样可以使得第一基板100在与其他封装基板焊接时第一区域1001和第二区域1002之间的应力差,降低第一基板100出现翘曲的可能,提高集成电路封装结构的制备良率。In an exemplary embodiment of the present specification, referring to FIG. 6 in conjunction with FIG. 2 and FIG. 4 , FIG. 6 is a schematic diagram of the
在本说明书的一个示例性实施例中,所述第一区域1001的面积与第一区域1001和第二区域1002的面积之和的比值的取值范围为10%~20%,即10%≤MA/(MA+MB)≤20%,其中MA表示第一区域1001的面积,MB表示第二区域1002的面积。发明人经过研究发现,将第一区域1001的面积与第一区域1001和第二区域1002的面积之和的比值限定在10%~20%之间,可以在满足提高核心电源131的稳定性的基础上,避免第一基板100在与其他封装基板封装后由于接触焊球110的焊接应力而导致的基板翘曲。In an exemplary embodiment of this specification, the ratio of the area of the
在本说明书的一个示例性实施例中,参考图7、图8、图9并结合参考图3,图8为集成电路封装结构10第一基板100第一侧101的示意图,图7为图6中沿BB’线的剖面结构示意图,图9为图8中沿CC’线的剖面结构示意图,所述第一区域1001在所述第一侧101的正投影与所述核心电源131在所述第一侧101的正投影至少部分交叠。在图9所示的实施例中,第一区域1001在所述第一侧101的正投影与核心电源131在第一侧的正投影一部分交叠,另一部分未交叠,这样设置在交叠区域中的第一电容120与核心电源131的去耦路径相对较短,有利于提升处于交叠区域中的第一电容120的电容滤波效果,保证第一电容120起到良好的电压稳定效果。In an exemplary embodiment of the present specification, referring to FIG. 7 , FIG. 8 , and FIG. 9 together with reference to FIG. 3 , FIG. 8 is a schematic diagram of the
在图3和图7所示的示例性实施例中,所述第一区域1001在所述第一侧101的正投影与所述核心电源131在所述第一侧的正投影重合,这样设置在第一区域1001中的第一电容120与核心电源131之间的距离均较小,即设置在第一区域1001中的第一电容120的去耦路径均相对较短,有利于提升第一电容120的滤波效果,保证第一电容120起到良好的电压稳定效果。In the exemplary embodiment shown in FIG. 3 and FIG. 7 , the orthographic projection of the
当然地,在本说明书的一些示例性实施例中,所述第一区域1001在所述第一侧101的正投影与所述核心电源131在所述第一侧的正投影也可以没有交叠区域,这样设计的第一区域1001可以满足一些特殊封装要求,有利于提高集成电路封装结构10的适用性。Certainly, in some exemplary embodiments of this specification, the orthographic projection of the
在本说明书的一个示例性实施例中,参考图10,图10为集成电路封装结构10的剖面结构示意图,所述第一基板还包括:位于所述第一区域1001中的凹陷区1001a,所述第一电容120设置于所述凹陷区1001a中。In an exemplary embodiment of this specification, referring to FIG. 10, FIG. 10 is a schematic cross-sectional structure diagram of an integrated
将第一电容120设置于凹陷区1001a中有助于增加第一电容120在纵向(垂直于第一基板100第一侧101和第二侧102的方向)上的空间,使得在第一基板100上放置第一电容120时,操作空间更大,有利于增加放置第一电容120的成功率,从而增加整个集成电路封装结构10的制备良率。此外,由于凹陷区1001a的存在,第一电容120的可放置空间在纵向上的空间变大,在保证第一电容120的高度小于接触焊球110的高度的前提下,可以选择高度更高的第一电容120,从而可以给第一电容120的尺寸选择提供更大的自由度。Disposing the
在本说明书的一个示例性实施例中,凹陷区1001a的面积可以等于第一区域1001的面积,即凹陷区1001a在第一侧101上的正投影可以与第一区域1001在第一侧101上的正投影重合(如图10所示),以为第一电容120提供尽量多的容纳空间。当然地,在本说明书的其他示例性实施例中,凹陷区1001a的面积也可以小于第一区域1001的面积,即凹陷区1001a在第一侧101上的正投影在第一区域1001在第一侧101上的正投影中,如此设置的凹陷区1001a可以为凹陷区1001a的形成提供较大的容错率,避免凹陷区1001a的形成工艺(例如刻蚀工艺或减薄工艺等)给第一区域1001之外的区域造成不良影响。本说明书对凹陷区1001a的具体尺寸大小并不做限定,具体视实际情况而定。In an exemplary embodiment of the present specification, the area of the recessed
在本说明书的一个示例性实施例中,参考图11,图11示出了第一基板100第一侧101的部分区域的放大示意图,所述第一电容120的数量为多个,多个所述第一电容120以阵列方式在所述第一区域1001中排布,同一行中的所述第一电容120的朝向相同。In an exemplary embodiment of the present specification, referring to FIG. 11 , FIG. 11 shows an enlarged schematic diagram of a partial area of the
在本实施例中,第一电容120的朝向是指第一电容120中第一极122(例如正极)或第二极123(例如负极)相对于电容器主体121的朝向,在图11中,从上向下数第一行中的所述第一电容120的第一极122相对于电容器主体121的朝向均为朝向纸面上方(即箭头DR1所指方向),第二极123相对于电容器主体121的朝向均为朝向纸面下方。不同行中的第一电容120的朝向可以相同,也可以不同(例如第二行中的第一电容120的朝向与第一行中的第一电容120的朝向不同)。由于连接第一极122的互联走线162不能与连接第二极123的互联走线162交叉,以避免将第一电容120短路,因此如此设置的第一电容120使得连接第一极122的互联走线162可以均在第一电容的一侧布置,连接第二极123的互联走线162可以均在第一电容的另一侧布置,有利于简化互联走线162的设计难度,降低将第一电容120短路的风险。In this embodiment, the orientation of the
在本说明书的一个示例性实施例中,仍然参考图11,同一行中的所述第一电容120的朝向与行方向垂直,同一行中的所述第一电容120的第一极122与所述球栅阵列中一行接触焊球110中的至少一个接触焊球110连接。In an exemplary embodiment of the present specification, still referring to FIG. 11 , the orientation of the
同一行中的所述第一电容120的第二极123与所述球栅阵列中另一行接触焊球110中的至少一个接触焊球110连接。The
不难理解的是,行方向即阵列中“行”的延伸方向,列方向即阵列中“列”的延伸方向,结合参考图11,图11中箭头DR1的指向方向与列方向平行,且与行方向垂直。将同一行中的所述第一电容120的朝向与行方向垂直,且将与同一行中的第一电容120的第一极122和第二极123连接的接触焊球110分布在不同行,有利于降低与第一极122和第二极123在与接触焊球110连接时出现交叉接触的可能,提高产品的制备良率。It is not difficult to understand that the row direction is the extension direction of the “row” in the array, and the column direction is the extension direction of the “column” in the array. Referring to FIG. 11 , the direction of the arrow DR1 in FIG. The row direction is vertical. The orientation of the
在图11中,各第一电容120的第一极122分别连接一接触焊球110,多个第一电容120的第二极123连接同一个接触焊球110。在其他示例性实施例中,也可以多个第一电容120的第一极122连接同一接触焊球110,或者各第一电容120的第二极123分别连接不同的接触焊球110,本说明书对此并不做限定。In FIG. 11 , the
示例性集成电路系统Exemplary Integrated Circuit System
本说明书实施例还提供了一种集成电路系统,参考图12和图13,所述集成电路系统包括:如上述任一实施例所述的集成电路封装结构10,以及印制电路板140,所述印制电路板140包括第三侧141和第四侧142,所述第三侧141包括至少一个耦合区域143,所述耦合区域143与所述第一基板100的球栅阵列耦合,第二电容150,所述第二电容150设置于所述第四侧142,所述第二电容150在所述第四侧142的正投影与所述接触焊球110在所述第四侧142的正投影互不交叠。The embodiments of this specification also provide an integrated circuit system. Referring to FIG. 12 and FIG. 13 , the integrated circuit system includes: the integrated
所述印制电路板140上的耦合区域143用于设置集成有集成电路部件130的第一基板100,印制电路板140通过第一基板100上的球栅阵列实现与集成电路部件的电连接,不同的集成电路部件130可以具有不同的功能,例如在图13中,两个集成电路部件130可以分别具有数据和/或指令存储功能以及运算功能,在实际工作中,其中一个集成电路部件130可以通过调用存储在另一个集成电路部件130中的数据和/或指令进行相应的运算等。本说明书对于印制电路板140上具体的耦合区域143数量并不做限定,对耦合区域143上耦合连接的第一基板100上集成电路部件130的具体功能也并不做限定,具体视实际情况而定。The
在本实施例中,印制电路板140的第四侧142上设置的第二电容150通过印制电路板140内部的互联层144以及球栅阵列中的至少部分接触焊球110实现与集成电路部件130的电连接。第二电容150由于设置在印制电路板140的第四侧142上,该侧没有其他元件的阻挡,因此可设置较大封装、较大容量的第二电容150以对集成电路部件130核心电源的电压波动起到稳压效果,提高系统稳定性。In this embodiment, the
在本说明书的一个示例性实施例中,所述第一电容120的封装尺寸小于所述第二电容150的封装尺寸,或,所述第一电容120的容量小于所述第二电容150的容量。In an exemplary embodiment of this specification, the package size of the
如前文所述,第一电容120可以选用封装尺寸为0402或0201的电容,第一电容高度通常低于0.35mm,电容量小于2.2μF。第二电容150则可以选用封装尺寸0805及以上的电容,第二电容150的电容量的取值范围可以包括22μF ~100μF。根据电容去耦原理,当集成电路部件130核心电源工作在低频段,比如几十kHz,由于低频信号在电感上产生的感抗可以忽略,因此在低频段时,第一电容120和第二电容150的等效电感(ESL)可以近似为零,当负载瞬间需要大电流的时候,第一电容120和第二电容150可以及时为负载供电,减少或消除核心电源的波动。由于此时频率较低,所以放电时间也比较长(频率的倒数),所以此时大容量的第二电容150可以长时间放电,能够对核心电源起到良好的稳压效果。As mentioned above, the
而当核心电源工作在中高频率时,当负载变化时,第一电容120和第二电容150上形成的等效电感不可忽视,此时小封装、小容量、低ESL的第一电容120更能发挥为负载快速提供电流的功能,所以此时第一电容120可以更快地为核心电源提供能量,保证集成电路部件的正常工作,提高系统稳定性。When the core power supply operates at medium and high frequency, when the load changes, the equivalent inductance formed on the
即总的来说,当第一电容120的封装尺寸小于第二电容150的封装尺寸,第一电容120的容量小于所述第二电容150的容量时,第一电容120可以在中频率(例如100MHz)或高频率为核心电源提供较好的能量补充作用,而第二电容150可以在低频率为核心电源提供较好的能量补充作用,第一电容120和第二电容150相互补充,保证核心电源在全频率段(特别是在低频率和中频率段)能够稳定运行,提高系统稳定性。That is to say, in general, when the package size of the
在本说明书的一个示例性实施例中,仍然参考图12,所述第四侧包括:第三区域145,所述第三区域145在所述第一侧101的正投影与所述第一电容的设置区域的正投影至少部分重叠,所述第二电容150设置于所述第三区域145中。In an exemplary embodiment of the present specification, still referring to FIG. 12 , the fourth side includes: a
在本实施例中,以所述第一电容的设置区域为第一区域1001为例进行说明,在本说明书的其他实施例中,当所述集成电路封装结构为如图15所示的封装结构时,所述第一电容的设置区域还可以为去耦区域,本说明书对此并不做限定。In this embodiment, the
所述第三区域145用于设置第二电容150,当第三区域145在所述第一侧101的正投影与所述第一区域1001在所述第一侧101的正投影至少部分重叠时,由于第一区域1001中接触焊球110的密度较小或不用于设置接触焊球110,可以增加重叠区域中第二电容150的设置自由度,无需考虑第二电容150与接触焊球110之间的位置关系。The
当第三区域145在所述第一侧101的正投影与所述第一区域1001在所述第一侧101的正投影完全重合时,第二电容150的设置自由度增加,且当第一区域1001与集成电路部件的核心电源重合设置时,第二电容150与核心电源之间的去耦路径也相对较短,有利于提高第二电容150的去耦效果,降低核心电源波动,提高系统稳定性。When the orthographic projection of the
在本说明书的一个示例性实施例中,参考图14,图14为印制电路板140的第四侧142的部分区域的放大示意图,所述第二电容150的数量为多个,多个所述第二电容150以阵列方式排布,在一列所述第二电容150中,所述第二电容150的朝向与行方向平行,且所述第二电容150的第一极151朝向预设边设置,所述预设边包括围成所述第三区域145的边中距离所述第二电容150最近的一条竖直边。In an exemplary embodiment of the present specification, referring to FIG. 14 , FIG. 14 is an enlarged schematic diagram of a partial area of the
在图14中,与第一电容120类似的,在第二电容150中,除了第二电容150的第一极151之外,还包括第二电容150的电容器主体152和第二极153。如前文所述,行方向是指球栅阵列中“行”的延伸方向,例如图14中箭头DR2所示方向,除了将第二电容150的朝向设置为与行方向平行之外,还将第二电容150的第一极151朝向预设边设置。所述第三区域145的外沿是指围成第三区域145的边,也即围成所述第三区域145的边,以图14为例,对于左侧一列的第二电容150而言,第三区域145的竖直边1451即为该列第二电容150的预设边,对于右侧一列的第二电容150而言,第三区域145的竖直边1452即为该列第二电容150的预设边。如此设置的第二电容150的第一极151全部朝向“外侧”(即朝向预设边),使得与核心电源连接的第一极151的朝向相同,有利于简化在第四侧142上的走线设计,且第一极151均朝向外侧,有利于增加与第一极151连接的走线的布置空间,降低设计难度,提高制备良率。In FIG. 14 , similar to the
需要说明的是,由于第二电容150的封装尺寸较大,因此在图12、图13和图14中,一个所述第三区域145中的第二电容150的均以两列的方式设置,有利于简化第二电容150的布置方式以及与第二电容150连接的走线的设计。但在本说明书的其他示例性实施例中,第三区域145中的第二电容150还可以根据实际情况以三列或者更多列的方式设置,本说明书对此并不做限定。It should be noted that, since the package size of the
在本说明书的一个示例性实施例中,仍然参考图13,所述集成电路系统20还包括:第一电源端子171、第二电源端子172和第三电容173。In an exemplary embodiment of the present specification, still referring to FIG. 13 , the
所述第三侧141包括至少两个所述耦合区域,所述第三电容173、所述第一电源端子171和所述第二电源端子172设置于相邻所述耦合区域之间,所述第三电容173的第一极与所述第一电源端子171连接,所述第三电容173的第二极与所述第二电源端子172连接。The
在本实施例中,第一电源端子171和第二电源端子172可以分别为系统电源的正极端子和负极端子,系统电源即为印制电路板140上承载的集成电路部件提供工作电压的电源。在印制电路板140的第三侧141设置的第三电容173,对于低频电源信号(例如,小于或等于30MHz的电源信号)可以起到较好的去耦作用,提高系统电源的稳定性。In this embodiment, the first
示例性封装结构Exemplary Package Structure
本说明书的一个或多个实施例还提供了一种集成电路封装结构10,如图15所示,所述集成电路封装结构10包括第一基板100,所述第一基板100包括封装侧202和与所述封装侧202相对的电路侧201,所述电路侧201用于设置集成电路部件130,所述封装侧202包括去耦区域2021和围绕所述去耦区域2021的焊接区域2022,所述去耦区域2021用于提供第一电容120的设置空间,所述第一电容120用于降低或消除所述集成电路部件130的核心电源131的电源波动。One or more embodiments of the present specification also provide an integrated
所述第一基板100的封装侧202是指和其他封装基板封装的一侧,所述第一基板100的电路侧201则是指用于设置集成电路部件130的一侧。不难理解的是,为了实现封装侧202与其他封装基板的焊接,所述封装侧202上通常用于设置包括多个接触焊球110的球栅阵列,这些接触焊球110主要设置在焊接区域2022中,而去耦区域2021则主要是为了给第一电容120提供放置空间。The
为了尽可能的为第一电容120提供较多的设置空间,在本说明书的一个实施例中,所述去耦区域2021中不用于设置所述接触焊球110。In order to provide more space for the
为了降低由于设置去耦区域2021而导致的第一基板100翘曲等的风险,在本说明书的一个实施例中,所述去耦区域2021用于设置少量的接触焊球110,即去耦区域2021中的接触焊球110密度小于焊接区域2022中的接触焊球110密度。In order to reduce the risk of warpage of the
即总的来说,去耦区域2021中主要用于放置第一电容120,换句话说,去耦区域2021中放置第一电容120的面积要大于放置接触焊球110的区域。That is, in general, the
在本实施例中,在封装侧202中为第一电容120设置了专门的去耦区域2021,以为第一电容120提供较大的放置空间,在使得第一电容120消除或降低所述集成电路部件130的核心电源131波动的前提下,降低了第一电容120的设置难度,同时专门的去耦区域2021也有利于放置相对较多数量的第一电容120,有利于优化去耦区域2021中第一电容120对核心电源131波动的抑制能力。In this embodiment, a
示例性封装方法Exemplary packaging method
图16是本说明书一示例性实施例提供的集成电路封装方法的流程示意图,该方法包括:FIG. 16 is a schematic flowchart of an integrated circuit packaging method provided by an exemplary embodiment of the present specification, and the method includes:
S101:提供第一基板,所述第一基板包括第一侧和与所述第一侧相对的第二侧,所述第一侧包括第一区域和围绕所述第一区域的第二区域。S101: Provide a first substrate, the first substrate includes a first side and a second side opposite the first side, the first side includes a first area and a second area surrounding the first area.
S102:在所述第二侧形成集成电路部件,所述集成电路部件包括核心电源。S102: Form an integrated circuit component on the second side, where the integrated circuit component includes a core power supply.
S103:在所述第一侧形成球栅阵列,所述球栅阵列包括多个接触焊球,分布于所述第一区域中的所述接触焊球的密度小于分布于所述第二区域中的接触焊球的密度。S103: Form a ball grid array on the first side, the ball grid array includes a plurality of contact solder balls, and the density of the contact solder balls distributed in the first area is smaller than that of the contact solder balls distributed in the second area the density of the contact balls.
在步骤S103中,形成球栅阵列时可以按照传统的球栅阵列形成工艺在第一区域和第二区域中无差别的进行接触焊球的制备,然后去除掉第二区域中部分或全部的接触焊球,以使分布于所述第一区域中的所述接触焊球的密度小于分布于所述第二区域中的接触焊球的密度。当然也可以在第一区域和第二区域中采用不同的球栅阵列形成工艺,以在一开始即使得分布于所述第一区域中的所述接触焊球的密度小于分布于所述第二区域中的接触焊球的密度。本说明书对球栅阵列的具体形成工艺并不做限定,具体视实际情况而定。In step S103, when forming the ball grid array, the contact solder balls may be prepared in the first region and the second region without distinction according to the conventional ball grid array forming process, and then some or all of the contacts in the second region are removed. solder balls, so that the density of the contact solder balls distributed in the first region is smaller than the density of the contact solder balls distributed in the second region. Of course, different ball grid array forming processes can also be used in the first area and the second area, so that the density of the contact solder balls distributed in the first area is lower than that in the second area at the beginning. Density of contact balls in the area. This specification does not limit the specific formation process of the ball grid array, which depends on the actual situation.
S104:在第一区域形成第一电容,所述第一电容与至少两个所述接触焊球连接,以与所述集成电路部件电连接。S104: Form a first capacitor in the first region, where the first capacitor is connected to at least two of the contact solder balls so as to be electrically connected to the integrated circuit component.
应该理解的是,虽然图16的流程图中的各个步骤按照箭头的指示依次显示,但是这些步骤并不是必然按照箭头指示的顺序依次执行。除非本说明书中有明确的说明,这些步骤的执行并没有严格的顺序限制,这些步骤可以以其它的顺序执行。而且,图16中的至少一部分步骤可以包括多个子步骤或者多个阶段,这些子步骤或者阶段并不必然是在同一时刻执行完成,而是可以在不同的时刻执行,这些子步骤或者阶段的执行顺序也不必然是依次进行,而是可以与其它步骤或者其它步骤的子步骤或者阶段的至少一部分轮流或者交替地执行。It should be understood that, although the steps in the flowchart of FIG. 16 are sequentially displayed in accordance with the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated in this specification, the execution of these steps is not strictly limited in order, and these steps can be executed in other sequences. Moreover, at least a part of the steps in FIG. 16 may include multiple sub-steps or multiple stages. These sub-steps or stages are not necessarily executed and completed at the same time, but may be executed at different times. The execution of these sub-steps or stages The sequence is also not necessarily sequential, but may be performed alternately or alternately with other steps or sub-steps of other steps or at least a portion of a phase.
利用上述封装方法形成的封装结构的各个具体结构和有益效果可参考上文“示例性封装结构”的相关描述,本说明书在此不做赘述。For the specific structures and beneficial effects of the package structure formed by the above-mentioned packaging method, reference may be made to the relevant description of the "exemplary package structure" above, which will not be repeated in this specification.
示例性电子设备Exemplary Electronics
本说明书的一个或多个示例性实施例还提供了一种电子设备,该电子设备包括如上述任一实施例所述的集成电路系统。One or more exemplary embodiments of the present specification also provide an electronic device including the integrated circuit system as described in any of the above embodiments.
示例性芯片Exemplary Chip
本说明书的一个或多个示例性实施例还提供了一种服务器芯片,该服务器芯片包括如上述任一实施例所述的集成电路系统。One or more exemplary embodiments of this specification also provide a server chip, where the server chip includes the integrated circuit system described in any of the foregoing embodiments.
所述服务器芯片通常具有大尺寸、高运算量和高并发量的特点,采用上述任一实施例所述的集成电路系统,通过集成电路系统中设置在第一基板的第一侧中设置的第一电容,可以在服务器芯片进行高并发或高运算量作业时,为服务器芯片的核心电源提供能量,降低或减少核心电源波动,保障服务器芯片的正常运行。所述服务器芯片可以包括存储器和处理器中的一种,也可以是集成有存储器和处理器等多个结构的集成芯片,本说明书对所述服务器芯片的具体种类和形式并不做限定,具体视实际情况而定。The server chip usually has the characteristics of large size, high computational complexity and high concurrency. Using the integrated circuit system described in any of the above-mentioned embodiments, the integrated circuit system is provided through the first side of the first substrate in the integrated circuit system. A capacitor can provide energy for the core power supply of the server chip when the server chip performs high concurrency or high computational workload operations, reduce or reduce the fluctuation of the core power supply, and ensure the normal operation of the server chip. The server chip may include one of a memory and a processor, or an integrated chip that integrates multiple structures such as a memory and a processor. This specification does not limit the specific type and form of the server chip. It depends on the actual situation.
以上结合具体实施例描述了本说明书的基本原理,但是,需要指出的是,在本说明书中提及的优点、优势、效果等仅是示例而非限制,不能认为这些优点、优势、效果等是本说明书的各个实施例必须具备的。另外,上述公开的具体细节仅是为了示例的作用和便于理解的作用,而非限制,上述细节并不限制本说明书为必须采用上述具体的细节来实现。The basic principles of this specification have been described above with reference to specific embodiments. However, it should be pointed out that the advantages, advantages, effects, etc. mentioned in this specification are only examples rather than limitations, and these advantages, advantages, effects, etc. should not be considered to be A must-have for each embodiment of this specification. In addition, the specific details disclosed above are only for the role of example and the role of facilitating understanding, rather than limiting, and the above-mentioned details do not limit the specification to be implemented by using the above-mentioned specific details.
Claims (15)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210308497.8A CN114420661B (en) | 2022-03-28 | 2022-03-28 | Integrated circuit packaging structure, packaging method, integrated circuit system and electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210308497.8A CN114420661B (en) | 2022-03-28 | 2022-03-28 | Integrated circuit packaging structure, packaging method, integrated circuit system and electronic equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114420661A CN114420661A (en) | 2022-04-29 |
| CN114420661B true CN114420661B (en) | 2022-07-15 |
Family
ID=81263529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210308497.8A Active CN114420661B (en) | 2022-03-28 | 2022-03-28 | Integrated circuit packaging structure, packaging method, integrated circuit system and electronic equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114420661B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115377052B (en) * | 2022-08-25 | 2025-03-25 | 飞腾信息技术有限公司 | Package substrate design method and related equipment |
| CN115600542B (en) * | 2022-11-28 | 2023-04-07 | 飞腾信息技术有限公司 | Chip packaging structure and design method and related equipment thereof |
| CN119252813B (en) * | 2024-08-20 | 2025-10-03 | 深圳市紫光同创电子股份有限公司 | Packaging structure and chip |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6423577B1 (en) * | 2000-05-02 | 2002-07-23 | Silicon Integrated Systems Corp. | Method for reducing an electrical noise inside a ball grid array package |
| US10892316B2 (en) * | 2018-11-15 | 2021-01-12 | Google Llc | High density ball grid array (BGA) package capacitor design |
| CN111199934B (en) * | 2018-11-16 | 2022-07-19 | 瑞昱半导体股份有限公司 | Circuit device and circuit design and assembly method |
| CN113097190B (en) * | 2020-01-08 | 2024-08-13 | 台达电子企业管理(上海)有限公司 | Power module and electronic device |
-
2022
- 2022-03-28 CN CN202210308497.8A patent/CN114420661B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN114420661A (en) | 2022-04-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN114420661B (en) | Integrated circuit packaging structure, packaging method, integrated circuit system and electronic equipment | |
| US10555417B2 (en) | Mainboard assembly including a package overlying a die directly attached to the mainboard | |
| KR100616384B1 (en) | Electronic assembly with vertically connected capacitors and manufacturing method | |
| US8785245B2 (en) | Method of manufacturing stack type semiconductor package | |
| US7133294B2 (en) | Integrated circuit packages with sandwiched capacitors | |
| US7173329B2 (en) | Package stiffener | |
| US20150022985A1 (en) | Device-embedded package substrate and semiconductor package including the same | |
| US10109576B2 (en) | Capacitor mounting structure | |
| JP6280244B2 (en) | Embedded package substrate capacitor with configurable / controllable equivalent series resistance | |
| JP2004228323A (en) | Semiconductor apparatus | |
| CN1327461C (en) | Capacitor with extended surface lands and method of fabrication therefor | |
| US8791501B1 (en) | Integrated passive device structure and method | |
| US8456025B2 (en) | Semiconductor chip having staggered arrangement of bonding pads | |
| TWI499011B (en) | Package structure and method for manufacturing the same | |
| KR20150048105A (en) | Wiring substrate and wiring substrate fabrication method | |
| TW200416908A (en) | Mounting capacitors under ball grid array | |
| CN112055891A (en) | High density Ball Grid Array (BGA) packaged capacitor design | |
| JPWO2005122257A1 (en) | Semiconductor device with built-in capacitor and manufacturing method thereof | |
| JP2007305642A (en) | Multilayer circuit board and electronic device | |
| US20240071958A1 (en) | Chip package with integrated embedded off-die inductors | |
| US12424580B2 (en) | Chip package with integrated off-die inductor | |
| US20230363084A1 (en) | Vertical power supply system and manufacturing method of connection board | |
| CN221201168U (en) | Package structure | |
| CN110299332A (en) | Chip-packaging structure | |
| CN222051740U (en) | Chip packaging structure, packaging module and electronic device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |