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CN114430732A - Low-E matchable coated articles with absorbent films and corresponding methods - Google Patents

Low-E matchable coated articles with absorbent films and corresponding methods Download PDF

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CN114430732A
CN114430732A CN202080063525.3A CN202080063525A CN114430732A CN 114430732 A CN114430732 A CN 114430732A CN 202080063525 A CN202080063525 A CN 202080063525A CN 114430732 A CN114430732 A CN 114430732A
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layer
coated article
heat treatment
silver
minutes
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CN114430732B (en
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徐永利
布伦特·博伊斯
萨拉赫·布萨阿德
菲利普·林格尔
劳静玉
理查德·韦尔纳
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Guardian Glass LLC
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    • C03C17/3681Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating being used in glazing, e.g. windows or windscreens
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Abstract

本发明提供了一种低E涂层,该低E涂层在热处理(HT)时具有良好的颜色稳定性(低ΔE*值)。热稳定性可通过如下方式改善:通过提供具有或包含掺杂有至少一种掺杂物(例如Sn)的氧化锌的沉积态的结晶或基本上结晶的层,该层紧接在具有或包含银的红外(IR)反射层下;和/或通过提供具有或包含锆氧化物的至少一个电介质层。这些具有显著改善涂层的热稳定性的效应(即,降低ΔE*值)。吸收膜可被设计成调节可见光透射率并提供期望的着色,同时保持耐久性和/或热稳定性。可以溅射沉积(例如,具有或包含Zr氧化物的)电介质层以具有单斜晶相,从而改善热稳定性。

Figure 202080063525

The present invention provides a low E coating with good color stability (low ΔE* value) upon heat treatment (HT). Thermal stability can be improved by providing a crystalline or substantially crystalline layer as deposited having or comprising zinc oxide doped with at least one dopant (eg, Sn) immediately after having or comprising under an infrared (IR) reflective layer of silver; and/or by providing at least one dielectric layer having or comprising zirconium oxide. These have the effect of significantly improving the thermal stability of the coating (ie reducing the ΔE* value). Absorptive films can be designed to adjust visible light transmission and provide desired coloration while maintaining durability and/or thermal stability. Dielectric layers (eg, with or containing Zr oxide) can be sputter deposited to have a monoclinic phase to improve thermal stability.

Figure 202080063525

Description

具有吸收膜的低E可匹配涂覆制品及相应方法Low E matchable coated article with absorbent film and corresponding method

本申请要求2019年10月8日提交的美国申请序列号16/596,632的权益,该美国申请序列号16/596,632是2019年3月18日提交的美国申请序列号16/355,966的部分继续申请(CIP),该美国申请序列号16/355,966是2018年12月14日提交的美国申请号16/220,037的部分继续申请(CIP),该美国申请号16/220,037是2018年7月16日提交的美国申请序列号16/035,810(现在是美国专利号10,031,215)的部分继续申请,这些申请的公开内容据此全文以引用方式并入本文中。This application claims the benefit of US Application Serial No. 16/596,632, filed October 8, 2019, which is a continuation-in-part of US Application Serial No. 16/355,966, filed March 18, 2019 ( CIP), which US Application Serial No. 16/355,966 is a continuation-in-part (CIP) of US Application No. 16/220,037, filed on December 14, 2018, which was filed on July 16, 2018 A continuation-in-part of US Application Serial No. 16/035,810 (now US Patent No. 10,031,215), the disclosures of which are hereby incorporated by reference in their entirety.

本发明涉及在热处理(例如,热回火)之前和之后均具有如肉眼所观察到的大致相同的颜色特性的低E涂覆制品,以及对应的方法。在某些示例性实施方案中,此类制品可结合以下两者或更多者:(1)期望的可见光透射特性,(2)热处理之前和/或之后的良好耐久性,(3)指示热处理(HT)时的颜色稳定性的低ΔE*值,和/或(4)设计成调节可见光透射率并为涂覆制品提供期望的着色,同时保持耐久性和/或热稳定性的吸收膜。此类涂覆制品可单片用于窗、中空玻璃(IG)窗单元、层压窗单元、车辆挡风玻璃和/或其他车辆或建筑或住宅窗应用中。The present invention relates to low-E coated articles having approximately the same color characteristics as observed with the naked eye, both before and after heat treatment (eg, thermal tempering), and corresponding methods. In certain exemplary embodiments, such articles may incorporate two or more of: (1) desirable visible light transmission properties, (2) good durability before and/or after heat treatment, (3) indicative of heat treatment (HT) low ΔE* values for color stability, and/or (4) absorbing films designed to adjust visible light transmission and provide desired coloration to coated articles while maintaining durability and/or thermal stability. Such coated articles can be used monolithically in windows, insulating glass (IG) window units, laminated window units, vehicle windshields, and/or other vehicle or architectural or residential window applications.

背景技术Background technique

需要实质性的匹配性(热处理之前与热处理之后)。玻璃基底通常大量生产,并且切割成一定尺寸,以便满足特定情况(诸如新的多窗办公建筑物、车窗需求等)的需要。在此类应用中,通常期望窗和/或门中的一些被热处理(即,回火、热强化或热弯曲),而另一些则不需要。办公建筑物通常采用IG单元和/或层压体来进行安全和/或热控制。出于建筑和/或美学目的,期望经热处理(HT)的单元和/或层压体基本上与它们的未经热处理的对应物(例如,至少在从建筑物外部观察的一侧上,在颜色、反射率、透射等方面)匹配。Substantial matching (before and after heat treatment) is required. Glass substrates are typically mass produced and cut to size to meet the needs of a particular situation (such as new multi-window office buildings, vehicle window requirements, etc.). In such applications, it is often desirable that some of the windows and/or doors be heat treated (ie, tempered, heat strengthened, or heat bent), while others are not. Office buildings often employ IG units and/or laminates for security and/or thermal control. For architectural and/or aesthetic purposes, it is desirable that heat-treated (HT) units and/or laminates are substantially identical to their non-heat-treated counterparts (e.g., at least on the side viewed from the exterior of the building, on the Color, reflectivity, transmission, etc.) matching.

共同拥有的美国专利5,688,585公开了一种阳光控制涂覆制品,其包括:玻璃/Si3N4/NiCr/Si3N4。'585专利的一个目的是提供一种溅射涂覆层体系,该溅射涂覆层体系在热处理(HT)后可与其未经热处理的对应物颜色匹配。虽然'585专利的涂层体系对于其预期目的而言是优异的,但它们具有某些缺点。具体地,它们往往具有相当高的比辐射率和/或薄层电阻值(例如,因为'585专利中未公开银(Ag)层)。Commonly owned US Patent 5,688,585 discloses a solar control coated article comprising: glass/ Si3N4 / NiCr/Si3N4 . One object of the '585 patent is to provide a sputter coating system that, after heat treatment (HT), can be color matched to its non-heat treated counterpart. While the coating systems of the '585 patent are excellent for their intended purpose, they suffer from certain disadvantages. In particular, they tend to have relatively high emissivity and/or sheet resistance values (eg, because silver (Ag) layers are not disclosed in the '585 patent).

在现有技术中,在除上述'585专利的那些之外的体系中,可在两种不同的层体系(其中一种经热处理,另一种未经热处理)之间实现匹配性。开发和使用两种不同的层体系以实现匹配性的必要性产生了不期望的额外制造费用和库存需求。In the prior art, in systems other than those of the aforementioned '585 patent, compatibility can be achieved between two different layer systems, one heat treated and the other unheat treated. The necessity to develop and use two different layer systems for matching creates undesired additional manufacturing overhead and inventory requirements.

美国专利6,014,872和5,800,933(参见实施例B)公开了可热处理的低E层体系,其包括:玻璃/TiO2/Si3N4/NiCr/Ag/NiCr/Si3N4。遗憾的是,当经热处理时,该低E层体系与其未经热处理的对应物(如从玻璃侧观察)不是大致颜色可匹配的。这是因为该低E层体系具有大于4.1的ΔE*(玻璃侧)值(即,对于实施例B,Δa*G为1.49,Δb*G为3.81,并且ΔL*(玻璃侧)未测量;使用以下等式(1),则玻璃侧的ΔE*一定必须大于4.1并且可能比其高得多)。US Patents 6,014,872 and 5,800,933 (see Example B) disclose heat treatable low E layer systems comprising: Glass/ TiO2 /Si3N4/NiCr/ Ag / NiCr /Si3N4 . Unfortunately, when heat treated, this low E layer system is not approximately color matchable with its unheat treated counterpart (as viewed from the glass side). This is because this low-E layer system has a ΔE* (glass side) value greater than 4.1 (ie, for Example B, Δa* G is 1.49, Δb*G is 3.81, and ΔL* (glass side) was not measured; using Equation (1) below, then the ΔE* on the glass side must necessarily be greater than 4.1 and may be much higher).

美国专利5,563,734公开了一种低E涂层体系,其包括:基底/TiO2/NiCrNx/Ag/NiCrNx/Si3N4。遗憾的是,已经发现当在形成NiCrNx层时使用高的氮气(N)流速时(参见'734专利的表1中143sccm的高N流速;转化为约22sccm/kW),所得的涂覆制品在热处理时颜色不稳定(即,它们倾向于具有大于6.0的高ΔE*(玻璃侧)值)。换句话讲,如果经受HT,'734专利低E层体系将不能与其未经热处理的对应物(如从玻璃侧观察)大致颜色匹配。US Patent 5,563,734 discloses a low E coating system comprising: substrate/ TiO2 / NiCrNx / Ag / NiCrNx /Si3N4. Unfortunately, it has been found that when high nitrogen (N) flow rates are used in forming the NiCrNx layer (see the high N flow rate of 143 seem in Table 1 of the '734 patent; translates to about 22 seem/kW), the resulting coated article Colors are not stable upon heat treatment (ie, they tend to have high ΔE* (glass side) values greater than 6.0). In other words, if subjected to HT, the '734 patent low E layer system would not be able to approximately color match its non-heat treated counterpart (as viewed from the glass side).

此外,有时期望涂覆制品具有期望的可见光透射特性和/或良好的(机械和/或化学)耐久性。遗憾的是,为调节或改善可见光透射特性和/或HT前耐久性而采取的某些已知步骤往往会降低HT后耐久性和热稳定性。因此,通常难以获得期望的可见光透射率值、颜色的热稳定性和良好耐久性的组合。Furthermore, it is sometimes desirable for coated articles to have desirable visible light transmission properties and/or good (mechanical and/or chemical) durability. Unfortunately, certain known steps taken to adjust or improve visible light transmission properties and/or pre-HT durability tend to reduce post-HT durability and thermal stability. Therefore, it is often difficult to obtain the desired combination of visible light transmittance values, thermal stability of the color and good durability.

鉴于上述情况,对本领域的技术人员将显而易见的是,存在对低E涂层或层体系的需要,该低E涂层或层体系在HT后在颜色和/或反射(如人肉眼所观察)上与其未经热处理的对应物基本上匹配。换句话讲,在本领域中存在对低E匹配涂层或分层体系的需要。在本领域中还需要一种可热处理的系统,其可结合以下一者或多者:(1)期望的可见光透射特性(例如,以单片测量为约30%-75%,和/或以IG单元测量为30%-70%),(2)热处理之前和/或之后的良好耐久性,(3)指示热处理(HT)时的颜色稳定性的低ΔE*值,和/或(4)设计成调节可见光透射率并为涂覆制品提供期望的着色,同时保持耐久性和/或热稳定性的吸收膜。In view of the above, it will be apparent to those skilled in the art that there is a need for a low E coating or layer system that is color and/or reflective (as observed by the human eye) after HT substantially matched to its unheat-treated counterpart. In other words, there is a need in the art for a low E matching coating or layered system. There is also a need in the art for a heat treatable system that can incorporate one or more of: (1) a desired visible light transmission characteristic (eg, about 30%-75% measured on a single sheet, and/or a IG units measured as 30%-70%), (2) good durability before and/or after heat treatment, (3) low ΔE* values indicating color stability upon heat treatment (HT), and/or (4) Absorbent films designed to adjust visible light transmission and provide desired coloration to coated articles while maintaining durability and/or thermal stability.

本发明的目的是满足上文列出的需求中的一者或多者,和/或一旦给出以下公开内容将对技术人员而言变得更加显而易见的其他需求。It is an object of the present invention to satisfy one or more of the needs listed above, and/or other needs that will become more apparent to the skilled person once the following disclosure is given.

发明内容SUMMARY OF THE INVENTION

本发明的一个示例性目的是提供一种在热处理(HT)时具有良好颜色稳定性(低ΔE*值)的低E涂层或层体系。本发明的另一个示例性目的是提供一种低E可匹配涂层或分层体系。在某些示例性实施方案中,另一个示例性目的是提供一种在低E涂层中的吸收膜,该吸收膜被设计成用于调节可见光透射率并为涂覆制品提供期望的着色,同时维持耐久性和/或热稳定性。An exemplary object of the present invention is to provide a low E coating or layer system with good color stability (low ΔE* value) upon heat treatment (HT). Another exemplary object of the present invention is to provide a low E matchable coating or layering system. In certain exemplary embodiments, another exemplary object is to provide an absorbing film in a low E coating that is designed to adjust visible light transmission and provide a desired coloration to the coated article, While maintaining durability and/or thermal stability.

本发明的示例性实施方案涉及在热处理(例如,热回火)之前和之后均具有如肉眼所观察到的大致相同的颜色特性的低E涂覆制品,以及对应的方法。在某些示例性实施方案中,此类制品可结合以下两者或更多者:(1)期望的可见光透射特性,(2)热处理之前和/或之后的良好耐久性,(3)指示热处理(HT)时的颜色稳定性的低ΔE*值,和/或(4)设计成调节可见光透射率并为涂覆制品提供期望的着色,同时保持耐久性和/或热稳定性的吸收膜。Exemplary embodiments of the present invention relate to low-E coated articles having approximately the same color characteristics as observed with the naked eye, both before and after heat treatment (eg, thermal tempering), and corresponding methods. In certain exemplary embodiments, such articles may incorporate two or more of: (1) desirable visible light transmission properties, (2) good durability before and/or after heat treatment, (3) indicative of heat treatment (HT) low ΔE* values for color stability, and/or (4) absorbing films designed to adjust visible light transmission and provide desired coloration to coated articles while maintaining durability and/or thermal stability.

在某些示例性实施方案中,任选的吸收膜可以是多层吸收膜,其包括具有或包含银(Ag)的第一层,以及具有或包含可部分或完全氧化的NiCr(NiCrOx)的第二层。因此,在某些示例性实施方案中,这种多层吸收膜可以由Ag/NiCrOx的层序列构成。在某些示例性实例中可以重复该层序列。吸收膜中的银基层优选地足够薄,使得其主要功能是吸收可见光并提供期望的着色(与厚得多并主要用作IR反射层相反)。NiCr或NiCrOx设置在吸收膜的银上方并与之接触,以便保护银,并且还有助于吸收。In certain exemplary embodiments, the optional absorber film may be a multilayer absorber film comprising a first layer having or comprising silver (Ag), and having or comprising NiCr (NiCrO x ) which is partially or fully oxidizable of the second layer. Thus, in certain exemplary embodiments, such a multilayer absorber film may be composed of a layer sequence of Ag/ NiCrOx . This sequence of layers may be repeated in some illustrative examples. The silver base layer in the absorbing film is preferably thin enough that its primary function is to absorb visible light and provide the desired coloration (as opposed to being much thicker and functioning primarily as an IR reflective layer). NiCr or NiCrOx is placed over and in contact with the silver of the absorber film to protect the silver and also to aid in absorption.

在本发明的某些示例性实施方案中,单层NiCr(或其他合适的材料)也可用作低E涂层中的吸收膜。然而,已经令人惊讶地发现,与作为吸收体的单层NiCr相比,在吸收膜(单层或多层吸收膜)中使用银提供了几个意想不到的优点。首先,已经发现,作为吸收体的单层NiCr倾向于在某些低E涂层涂覆制品中引起微黄色着色,这在某些情况下可能是不希望的。相反,已经令人惊讶地发现,在吸收膜中使用银倾向于避免这种微黄色着色和/或反而提供所得涂覆制品的更期望的中性着色。因此,已经发现在吸收膜中使用银提供改进的光学特性。第二,使用单层NiCr作为吸收体往往还涉及在NiCr的两侧上提供氮化硅基层,以便将NiCr直接夹在其间并与其接触。已经发现,在涂层叠堆中的某些位置提供氮化硅可能导致HT时的热稳定性受损。相反,已经令人惊讶地发现,当在吸收膜中使用银时,不需要一对直接相邻的氮化硅层,从而可以改善HT时的热稳定性。因此,已经发现在吸收膜中使用银提供改善的热稳定性,包括较低的ΔE*值,并因此提供改善的相同涂层的HT与非HT形式之间的匹配性。在吸收膜中使用银还可以在某些情况下提供改善的可制造性。In certain exemplary embodiments of the present invention, a single layer of NiCr (or other suitable material) may also be used as an absorber film in a low E coating. However, it has surprisingly been found that the use of silver in absorber films (single or multi-layer absorber films) provides several unexpected advantages compared to single layer NiCr as absorber. First, it has been found that a single layer of NiCr as an absorber tends to cause a yellowish tint in certain low E coating coated articles, which may be undesirable in certain circumstances. In contrast, it has been surprisingly found that the use of silver in the absorbing film tends to avoid this yellowish coloration and/or instead provides a more desirable neutral coloration of the resulting coated article. Accordingly, the use of silver in absorbing films has been found to provide improved optical properties. Second, using a single layer of NiCr as an absorber often also involves providing a silicon nitride base layer on both sides of the NiCr so that the NiCr is directly sandwiched between and in contact with it. It has been found that providing silicon nitride at certain locations in the coating stack may result in compromised thermal stability during HT. In contrast, it has been surprisingly found that when silver is used in the absorber film, a pair of immediately adjacent silicon nitride layers is not required, thereby improving thermal stability at HT. Accordingly, the use of silver in absorber films has been found to provide improved thermal stability, including lower ΔE* values, and thus improved matching between HT and non-HT versions of the same coating. The use of silver in absorber films can also provide improved manufacturability in some cases.

在某些示例性实施方案中,令人惊讶和出乎意料地,已发现在低E涂层中具有或包含银的红外(IR)反射层正下方设置具有或包含掺杂有至少一种掺杂物(例如,Sn)的氧化锌的沉积态的结晶或基本上结晶(例如,至少50%结晶,更优选地至少60%结晶)的层具有显著改善涂层的热稳定性(即,降低ΔE*值)的效应。在本发明的各种实施方案中,可在一个或多个对应的包含银的IR反射层下方设置一个或多个此类结晶或基本上结晶(例如,至少50%结晶、更优选地至少60%结晶)的层。因此,在本发明的各种实施方案中,在具有或包含银的红外(IR)反射层正下方的具有或包含掺杂有至少一种掺杂物(例如,Sn)的氧化锌的结晶或基本上结晶的层可用于单银低E涂层、双银低E涂层或三银低E涂层。在某些示例性实施方案中,具有或包含氧化锌的结晶或基本上结晶的层掺杂有约1%-30%Sn、更优选地约1%-20%Sn、最优选地约5%-15%Sn,其中一个示例为约10%Sn(以重量%计)。掺杂有Sn的氧化锌在诸如经由溅射沉积技术从具有或包含Zn和Sn的至少一个溅射靶处于沉积态结晶相或基本上结晶相(与无定形或纳米晶相对)。沉积态结晶相的掺杂的氧化锌基层与银和玻璃之间的层组合允许涂覆制品在任选的HT时实现改善的热稳定性(降低ΔE*值)。据信,沉积态结晶相的掺杂的氧化锌基层(例如,至少50%结晶,更优选地至少60%结晶)与IR反射层和玻璃之间的层组合允许IR反射层的银具有改善的晶体结构,所述晶体结构具有纹理但具有一些无规取向的晶粒,使得其折射率(n)在任选的HT时变化较小,从而允许实现改善的热稳定性。In certain exemplary embodiments, it has been found, surprisingly and unexpectedly, that an infrared (IR) reflective layer having or comprising silver in the low E coating is disposed with or comprising at least one dopant As-deposited crystalline or substantially crystalline (eg, at least 50% crystalline, more preferably at least 60% crystalline) layers of zinc oxide of impurities (eg, Sn) have significantly improved thermal stability of the coating (ie, reduced ΔE* value). In various embodiments of the present invention, one or more such crystalline or substantially crystalline (eg, at least 50% crystalline, more preferably at least 60% crystalline, for example, at least 50% crystalline, more preferably at least 60% crystalline) may be disposed beneath one or more corresponding silver-containing IR reflective layers. % crystalline) layer. Thus, in various embodiments of the present invention, a crystalline or The substantially crystalline layer can be used for a single silver low E coating, a double silver low E coating, or a triple silver low E coating. In certain exemplary embodiments, the crystalline or substantially crystalline layer having or comprising zinc oxide is doped with about 1%-30% Sn, more preferably about 1%-20% Sn, most preferably about 5% - 15% Sn, one example of which is about 10% Sn (in wt %). Zinc oxide doped with Sn is in the as-deposited crystalline or substantially crystalline phase (as opposed to amorphous or nanocrystalline), such as via sputter deposition techniques from at least one sputter target having or comprising Zn and Sn. The as-deposited crystalline phase doped zinc oxide based layer combination with silver and glass allows the coated article to achieve improved thermal stability (reduced ΔE* value) with optional HT. It is believed that the combination of the as-deposited crystalline phase of the doped zinc oxide based layer (eg, at least 50% crystalline, more preferably at least 60% crystalline) with the layer between the IR reflective layer and the glass allows the silver of the IR reflective layer to have improved A crystal structure that is textured but has some randomly oriented grains such that its refractive index (n) changes less with optional HT, allowing improved thermal stability to be achieved.

在某些示例性实施方案中,还令人惊讶和出乎意料地发现,设置具有或包含氧化硅、氧化锆、氮氧化锆、氧化硅锆和/或氮氧化硅锆(例如,SiZrOx、ZrO2、SiO2和/或SiZrOxNy)的电介质层还提供涂覆制品的改善的热稳定性,并且因此在热处理(HT)诸如热回火时降低ΔE*值。在某些示例性实施方案中,可提供具有或包含氧化硅、氧化锆、氧化硅锆和/或氮氧化硅锆(例如,SiZrOx、ZrO2、SiO2和/或SiZrOxNy)的至少一个电介质层:(i)在所有银基IR反射层下方的涂层的底部电介质部分中,和/或(ii)在介于一对银基IR反射层之间的涂层的中间电介质部分中。例如,在本发明的某些示例性实施方案中,具有或包含氧化硅、氧化锆、氧化硅锆和/或氮氧化硅锆的电介质层可设置在最下层掺杂的氧化锌基层的正下方并与之接触,和/或设置在低E涂层的中间电介质部分中的一对含氧化锌的层之间。In certain exemplary embodiments, it has also been surprisingly and unexpectedly discovered that arrangements having or comprising silicon oxide, zirconium oxide, zirconium oxynitride, silicon zirconium oxide, and/or silicon zirconium oxynitride (eg, SiZrO x , zirconium oxynitride, etc.) Dielectric layers of ZrO 2 , SiO 2 and/or SiZrO x N y ) also provide improved thermal stability of the coated article and thus lower ΔE* values during thermal treatment (HT) such as thermal tempering. In certain exemplary embodiments, silicon oxide, zirconium oxide, silicon zirconium oxide, and/or silicon zirconium oxynitride (eg, SiZrO x , ZrO 2 , SiO 2 , and/or SiZrO x N y ) may be provided that have or include At least one dielectric layer: (i) in the bottom dielectric portion of the coating below all silver-based IR reflective layers, and/or (ii) in the middle dielectric portion of the coating between a pair of silver-based IR reflective layers middle. For example, in certain exemplary embodiments of the present invention, a dielectric layer having or comprising silicon oxide, zirconium oxide, silicon zirconium oxide, and/or silicon zirconium oxynitride may be disposed directly below the lowermost doped zinc oxide based layer and in contact therewith, and/or disposed between a pair of zinc oxide containing layers in the intermediate dielectric portion of the low E coating.

在本发明的各种示例性实施方案中,具有或包含氧化硅、氧化锆、氧化硅锆和/或氮氧化硅锆的电介质层可与或可不与具有或包含氧化锌的沉积态的结晶或基本上结晶的(例如,至少50%结晶的,更优选地至少60%结晶的)层组合紧接设置在红外(IR)反射层下方,所述氧化锌掺杂有至少一种掺杂物(例如Sn)。In various exemplary embodiments of the present invention, a dielectric layer having or comprising silicon oxide, zirconium oxide, silicon zirconium oxide, and/or silicon zirconium oxynitride may or may not be associated with as-deposited crystalline or A substantially crystalline (eg, at least 50% crystalline, more preferably at least 60% crystalline) layer combination is disposed immediately below the infrared (IR) reflective layer, the zinc oxide doped with at least one dopant ( such as Sn).

在某些示例性实施方案中,已经令人惊讶和出乎意料地发现,最初溅射沉积具有或包含氧化锆(例如ZrO2)、氮氧化锆、氧化硅锆和/或氮氧化硅锆(例如SiZrOx、ZrO2、SiO2和/或SiZrOxNy)的电介质层以包含单斜晶相晶体结构是有利的,因为其导致涂覆制品在热处理(HT)时具有改善的热稳定性(较低的ΔE*值)和/或减少的可见光透射率(例如Tvis或TY)变化。在某些示例性实施方案中,可以通过在该层的溅射沉积过程中对该层使用非常高的氧气流量,并使用金属溅射靶(例如Zr靶)来实现电介质层(例如ZrO2)的单斜晶相。例如,当溅射沉积层2和/或2”以形成具有单斜晶相的层时,用于该层的溅射工艺可以实现至少5ml/kW,更优选地至少6ml/kW,更优选地至少8ml/kW,最优选地至少10ml/kW的氧气流量,其中ml表示室中的总氧气流量,并且kW表示对靶的功率。应注意,在这种情况的某些示例性实施方案中所期望的这种高氧气流量是违反直觉的,并且通常是不期望的,因为它们降低沉积速率并因此在制造涂覆制品中产生了增加的时间和费用。虽然当使用某些类型的溅射设备时,在某些示例性实施方案中使用高氧气流量来实现与金属靶相关的单斜晶相,但是本发明不限于此,因为已经发现,对于某些类型的溅射设备,单斜晶相也可以用低或较低的氧气流量来实现。In certain exemplary embodiments, it has been surprisingly and unexpectedly discovered that the initial sputter deposition has or comprises zirconium oxide (eg, ZrO 2 ), zirconium oxynitride, zirconium silicon oxide, and/or zirconium silicon oxynitride ( Dielectric layers such as SiZrO x , ZrO 2 , SiO 2 and/or SiZrO x N y ) to comprise a monoclinic crystal structure are advantageous as it results in the coated article having improved thermal stability upon thermal treatment (HT) (lower ΔE* values) and/or reduced visible transmittance (eg T vis or TY ) changes. In certain exemplary embodiments, a dielectric layer (eg, ZrO 2 ) can be achieved by using a very high oxygen flow rate for the layer during sputter deposition of the layer, and using a metal sputter target (eg, a Zr target) the monoclinic phase. For example, when sputter depositing layers 2 and/or 2" to form a layer having a monoclinic phase, the sputtering process for this layer may achieve at least 5ml/kW, more preferably at least 6ml/kW, more preferably An oxygen flow of at least 8 ml/kW, most preferably at least 10 ml/kW, where ml represents the total oxygen flow in the chamber and kW represents the power to the target. It should be noted that in certain exemplary embodiments of this Such high oxygen flow rates as desired are counterintuitive and generally undesirable because they reduce deposition rates and thus create increased time and expense in making coated articles. Although certain types of sputtering equipment are used In certain exemplary embodiments, high oxygen flow rates are used to achieve the monoclinic phase associated with the metal target, but the invention is not so limited as it has been found that for certain types of sputtering equipment, the monoclinic phase It can also be achieved with low or lower oxygen flow.

已经发现,HT时层从单斜晶到四方晶或立方晶结构的显著的部分或完全相变以及相应的密度变化倾向于补偿所述HT时银层的晶体结构的变化,这似乎导致涂覆制品在HT时具有改善的热稳定性(较低的ΔE*值)和/或降低的可见光透射率(Tvis或TY)变化。已经令人惊讶地发现,最初溅射沉积具有或包含氧化锆、氮氧化锆、氧化硅锆和/或氮氧化硅锆(例如SiZrOx、ZrO2、SiO2和/或SiZrOxNy)的电介质层以包含单斜晶相晶体结构是有利的,因为其导致在HT时至少约0.25g/cm3、更优选地至少约0.30g/cm3并且最优选地至少约0.35g/cm3(例如约5.7g/cm3至约6.1g/cm3)的高的层密度变化,这又补偿在所述HT时银层的晶体结构的变化,从而导致涂覆制品在热处理(HT)时具有改善的热稳定性(较低的ΔE*值)和/或减少的可见光透射率(例如Tvis或TY)变化。在某些示例性实施方案中,这使得涂覆制品由于HT导致的可见光透射率(Tvis或TY)不超过1.2%、更优选地不超过1.0%并且最优选地不超过0.5%的减小的变化,和/或降低的ΔE*值。It has been found that the significant partial or complete phase transition of the layer from monoclinic to tetragonal or cubic structure upon HT and the corresponding change in density tend to compensate for the change in the crystal structure of the silver layer upon HT, which appears to result in coating Articles have improved thermal stability (lower ΔE* values) and/or reduced changes in visible light transmittance (T vis or TY ) at HT. Surprisingly, it has been found that initial sputter deposition of zirconium oxide, zirconium oxynitride, silicon zirconium oxide and/or silicon zirconium oxynitride (eg SiZrO x , ZrO 2 , SiO 2 and/or SiZrO x N y ) It is advantageous for the dielectric layer to contain a monoclinic phase crystal structure because it results in at least about 0.25 g/cm 3 , more preferably at least about 0.30 g/cm 3 and most preferably at least about 0.35 g/cm 3 at HT ( A high layer density variation of, for example, about 5.7 g/cm 3 to about 6.1 g/cm 3 ), which in turn compensates for the change in the crystal structure of the silver layer at the HT, resulting in the coated article having upon heat treatment (HT) Improved thermal stability (lower ΔE* values) and/or reduced visible transmittance (eg T vis or TY ) changes. In certain exemplary embodiments, this results in no more than 1.2%, more preferably no more than 1.0%, and most preferably no more than 0.5% reduction in visible light transmittance (T vis or TY) of the coated article due to HT changes, and/or decreased ΔE* values.

还令人惊讶和出乎意料地发现,在玻璃基底与最下层银基层之间不设置在最下层掺杂的氧化锌基层正下方并与之接触的氮化硅基层,与沉积态结晶相的掺杂的氧化锌基层组合,允许实现热处理时改善的热稳定性(降低ΔE*值)。还令人惊讶和出乎意料地发现,在两个银基IR反射层之间的叠堆的中间区段中不提供氮化硅基层允许实现热处理时的改善的热稳定性(较低的ΔE*值)。It has also been surprisingly and unexpectedly found that between the glass substrate and the lowermost silver layer, the silicon nitride layer not disposed directly under and in contact with the lowermost doped zinc oxide layer, has no difference with the as-deposited crystalline phase. The combination of doped zinc oxide based layers allows for improved thermal stability (reduced ΔE* values) upon thermal processing. It was also surprisingly and unexpectedly found that not providing a silicon nitride based layer in the middle section of the stack between two silver based IR reflective layers allows for improved thermal stability (lower ΔE) upon thermal processing. *value).

在单片测量和/或以具有双窗格的IG单元测量的某些示例性实施方案中,涂覆制品被构造成实现以下中的一者或多者:(i)在约650℃的温度下HT 8分钟、12分钟和/或16分钟时的透射ΔE*值(在测量透射光学器件的情况下)不大于3.0(更优选地不大于2.8,并且最优选地不大于2.5或2.3),(ii)在约650℃的温度下HT 8分钟、12分钟和/或16分钟时的玻璃侧反射ΔE*值(在测量玻璃侧反射光学器件的情况下)不大于3.0(更优选地不大于2.5,更优选地不大于2.0,并且最优选地不大于1.5,不大于1.0,和/或不大于0.6),和/或(iii)在约650℃的温度下HT 8分钟、12分钟、16分钟和/或20分钟时的膜侧反射ΔE*值(在测量膜侧反射光学器件的情况下)不大于3.5(更优选地不大于3.0,并且最优选地不大于2.0,或不大于1.5或1.3)。当然,在商业实践中,烘焙时间可用于不同/其他时间段,并且这些时间段用于参考目的。在单片测量的某些示例性实施方案中,涂覆制品被构造成在任何任选的HT之前或之后具有至少约30%、更优选地至少约40%并且最优选地至少约50%(例如,约45%-60%)的可见光透射率(Tvis或Y)。本文的涂覆制品可具有例如约30%-75%的单片测量的可见光透射率,和/或30%-70%的以IG单元测量的可见光透射率。其中,可以调节吸收体的厚度、组成和/或层数以调节可见光透射率。在单片测量的某些示例性实施方案中,涂覆制品被构造成在任何任选的HT之前或之后具有单片测量的不大于约20%的玻璃侧可见光反射(RgY或RGY)。In certain exemplary embodiments measured monolithically and/or measured with an IG unit with dual panes, the coated article is configured to achieve one or more of the following: (i) at a temperature of about 650°C Transmission ΔE* values (in the case of measuring transmission optics) at 8 minutes, 12 minutes and/or 16 minutes under HT of not greater than 3.0 (more preferably not greater than 2.8 and most preferably not greater than 2.5 or 2.3), (ii) Glass side reflection ΔE* values (in the case of measuring glass side reflection optics) at a temperature of about 650°C for 8 minutes, 12 minutes and/or 16 minutes of HT not greater than 3.0 (more preferably not greater than 2.5, more preferably no greater than 2.0, and most preferably no greater than 1.5, no greater than 1.0, and/or no greater than 0.6), and/or (iii) HT at a temperature of about 650°C for 8 minutes, 12 minutes, 16 minutes Film side reflection ΔE* values at minutes and/or 20 minutes (in the case of measuring film side reflection optics) not greater than 3.5 (more preferably not greater than 3.0 and most preferably not greater than 2.0, or not greater than 1.5 or 1.3). Of course, in commercial practice, bake times may be used for different/other time periods, and these time periods are for reference purposes. In certain exemplary embodiments measured monolithically, the coated article is constructed to have at least about 30%, more preferably at least about 40%, and most preferably at least about 50% ( For example, about 45%-60%) visible light transmittance (T vis or Y). The coated articles herein may have, for example, about 30%-75% visible light transmittance measured monolithically, and/or 30%-70% visible light transmittance measured in IG units. Among them, the thickness, composition and/or number of layers of the absorber can be adjusted to adjust the visible light transmittance. In certain exemplary embodiments measured monolithically, the coated article is constructed to have a glass side visible light reflection ( RgY or RGY) of no greater than about 20% measured monolithically before or after any optional HT .

在本发明的一个示例性实施方案中,提供了一种涂覆制品,所述涂覆制品包括位于玻璃基底上的涂层,其中所述涂层包括:设置在所述玻璃基底上的包含掺杂有约1%-30%Sn(重量%)的氧化锌的结晶或基本上结晶的层;包含银的第一红外(IR)反射层,所述第一红外反射层位于所述玻璃基底上并且在所述包含掺杂有约1%-30%Sn的氧化锌的第一结晶或基本上结晶的层正上方并与之接触;其中没有氮化硅基层位于所述包含掺杂有约1%-30%Sn的氧化锌的第一结晶或基本上结晶的层正下方并与之接触;具有单斜晶相并包含锆氧化物的至少一个电介质层;其中所述具有单斜晶相并包含锆氧化物的至少一个电介质层位于:(1)至少所述玻璃基底与所述包含掺杂有约1%-30%Sn(重量%)的氧化锌的第一结晶或基本上结晶的层之间,和/或(2)所述涂层的至少所述包含银的第一IR反射层与包含银的第二IR反射层之间;任选的吸收膜,所述吸收膜包括包含银的层,其中所述吸收膜的所述包含银的第一IR反射层的物理厚度与所述包含银的层的物理厚度的比率为至少5:1(更优选地至少8:1,甚至更优选地至少10:1,并且最优选地至少15:1);并且其中所述涂覆制品被构造成具有单片测量的以下中的至少两者:(i)由于在约650℃的温度下进行参考热处理12分钟所致的不大于3.0的透射ΔE*值,(ii)由于在约650℃的温度下进行所述参考热处理12分钟所致的不大于3.0的玻璃侧反射ΔE*值,以及(iii)由于在约650℃的温度下进行所述参考热处理12分钟所致的不大于3.5的膜侧反射ΔE*值。In an exemplary embodiment of the present invention, there is provided a coated article comprising a coating on a glass substrate, wherein the coating comprises: a coating comprising a dopant disposed on the glass substrate A crystalline or substantially crystalline layer of zinc oxide doped with about 1% to 30% Sn (wt %); a first infrared (IR) reflective layer comprising silver on said glass substrate and directly above and in contact with said first crystalline or substantially crystalline layer comprising zinc oxide doped with about 1%-30% Sn; %-30% Sn zinc oxide directly below and in contact with a first crystalline or substantially crystalline layer; at least one dielectric layer having a monoclinic phase and comprising zirconium oxide; wherein said having a monoclinic phase and At least one dielectric layer comprising zirconium oxide is located at: (1) at least the glass substrate and the first crystalline or substantially crystalline layer comprising zinc oxide doped with about 1%-30% Sn (wt %) between, and/or (2) between at least the first IR reflective layer comprising silver and the second IR reflective layer comprising silver of the coating; an optional absorbing film comprising a layer, wherein the ratio of the physical thickness of the first silver-containing IR reflective layer of the absorber film to the physical thickness of the silver-containing layer is at least 5:1 (more preferably at least 8:1, even more preferably at least 10:1, and most preferably at least 15:1); and wherein the coated article is constructed to have at least two of the following measured in a single piece: (i) due to at a temperature of about 650°C a transmission ΔE* value of not greater than 3.0 due to the reference heat treatment for 12 minutes, (ii) a glass side reflection ΔE* value of not greater than 3.0 due to the reference heat treatment performed at a temperature of about 650°C for 12 minutes, and (iii) A film side reflection ΔE* value of not greater than 3.5 due to the reference heat treatment at a temperature of about 650° C. for 12 minutes.

此类涂覆制品可单片用于窗、隔热玻璃(IG)窗单元(例如,IG窗单元应用中的表面#2或表面#3上)、层压窗单元、车辆挡风玻璃和/或其他车辆或建筑或住宅窗应用中。Such coated articles can be used monolithically on windows, insulated glass (IG) window units (eg, on Surface #2 or Surface #3 in IG window unit applications), laminated window units, vehicle windshields and/or or other vehicle or architectural or residential window applications.

现在将相对于如以下附图中所示的本发明的某些实施方案来描述本发明,其中:The present invention will now be described with respect to certain embodiments of the invention as shown in the following drawings, wherein:

附图说明Description of drawings

图1(a)、图1(b)、图1(c)、图1(d)、图1(e)、图1(f)、图1(g)、图1(h)和图1(i)为根据本发明的示例性实施方案的涂覆制品的剖视图。Figure 1(a), Figure 1(b), Figure 1(c), Figure 1(d), Figure 1(e), Figure 1(f), Figure 1(g), Figure 1(h) and Figure 1 (i) is a cross-sectional view of a coated article according to an exemplary embodiment of the present invention.

图2为示出在6mm厚玻璃基底上溅射沉积实施例1的低E涂层的溅射沉积条件的图表,其中该低E涂层由图1(a)一般性地示出。2 is a graph showing sputter deposition conditions for sputter deposition of the low E coating of Example 1 on a 6 mm thick glass substrate, where the low E coating is generally shown in FIG. 1(a).

图3为示出在6mm厚玻璃基底上溅射沉积实施例2的低E涂层的溅射沉积条件的图表,其中该低E涂层由图1(a)一般性地示出。3 is a graph showing sputter deposition conditions for sputter deposition of the low E coating of Example 2 on a 6 mm thick glass substrate, where the low E coating is generally shown in FIG. 1(a).

图4为示出实施例1的光学特性的图表:最左边数据列中的在热处理之前涂覆态(退火)、在650℃下热处理12分钟之后(HT)、在650℃下热处理16分钟之后(HTX)和最右边数据列中的在650℃下热处理24分钟之后(HTXXX)。4 is a graph showing the optical characteristics of Example 1: as coated (annealed) before heat treatment, after heat treatment at 650°C for 12 minutes (HT), after heat treatment at 650°C for 16 minutes in the leftmost data column (HTX) and after heat treatment at 650°C for 24 minutes in the far right data column (HTXXX).

图5为示出实施例2的光学特性的图表:最左边数据列中的在热处理之前涂覆态(退火)、在650℃下热处理12分钟之后(HT)、在650℃下热处理16分钟之后(HTX)和最右边数据列中的在650℃下热处理24分钟之后(HTXXX)。5 is a graph showing the optical characteristics of Example 2: as coated (annealed) before heat treatment, after heat treatment at 650°C for 12 minutes (HT), after heat treatment at 650°C for 16 minutes in the leftmost data column (HTX) and after heat treatment at 650°C for 24 minutes in the far right data column (HTXXX).

图6为示出在3.1mm厚玻璃基底上溅射沉积实施例3的低E涂层的溅射沉积条件的图表,其中该低E涂层由图1(a)一般性地示出。6 is a graph showing sputter deposition conditions for sputter deposition of the low E coating of Example 3 on a 3.1 mm thick glass substrate, where the low E coating is generally shown in FIG. 1(a).

图7为示出在3.1mm厚玻璃基底上溅射沉积实施例4的低E涂层的溅射沉积条件的图表,其中该低E涂层由图1(a)一般性地示出。7 is a graph showing sputter deposition conditions for sputter deposition of the low E coating of Example 4 on a 3.1 mm thick glass substrate, where the low E coating is generally shown in FIG. 1(a).

图8为示出实施例3-4的光学特性的图表:最左边数据列中在热处理之前涂覆态(退火)、在650℃下热处理8分钟之后(FIT)、在650℃下HT 12分钟之后(HTX)和最右边数据列中在650℃下热处理20分钟之后(HTXXX)。Figure 8 is a graph showing the optical properties of Examples 3-4: as-coated (annealed) before heat treatment, after heat treatment at 650°C for 8 minutes (FIT), HT at 650°C for 12 minutes in the leftmost data column After (HTX) and after heat treatment at 650°C for 20 minutes in the far right data column (HTXXX).

图9为示出在6mm厚玻璃基底上溅射沉积实施例5的低E涂层的溅射沉积条件的图表,其中该低E涂层由图1(a)一般性地示出。9 is a graph showing sputter deposition conditions for sputter deposition of the low E coating of Example 5 on a 6 mm thick glass substrate, where the low E coating is generally shown in FIG. 1(a).

图10为示出实施例5的光学特性的图表:最左边数据列中的在热处理之前涂覆态(退火)、在650℃下热处理12分钟之后(HT)、在650℃下热处理16分钟之后(HTX)和最右边数据列中的在650℃下热处理24分钟之后(HTXXX)。10 is a graph showing the optical characteristics of Example 5: as coated (annealed) before heat treatment, after heat treatment at 650°C for 12 minutes (HT), after heat treatment at 650°C for 16 minutes in the leftmost data column (HTX) and after heat treatment at 650°C for 24 minutes in the far right data column (HTXXX).

图11为示出在6mm厚玻璃基底上溅射沉积实施例6的低E涂层的溅射沉积条件的图表,其中该低E涂层由图1(a)一般性地示出。11 is a graph showing sputter deposition conditions for sputter deposition of the low E coating of Example 6 on a 6 mm thick glass substrate, where the low E coating is generally shown in FIG. 1(a).

图12为示出实施例6的光学特性的图表:最左边数据列中的在热处理之前涂覆态(退火)、在650℃下热处理12分钟之后(HT)、在650℃下热处理16分钟之后(HTX)和最右边数据列中的在650℃下热处理24分钟之后(HTXXX)。12 is a graph showing the optical characteristics of Example 6: as coated (annealed) before heat treatment, after heat treatment at 650°C for 12 minutes (HT), after heat treatment at 650°C for 16 minutes in the leftmost data column (HTX) and after heat treatment at 650°C for 24 minutes in the far right data column (HTXXX).

图13为示出在6mm厚玻璃基底上溅射沉积实施例7的低E涂层的溅射沉积条件的图表,其中该低E涂层由图1(a)一般性地示出。13 is a graph showing sputter deposition conditions for sputter deposition of the low E coating of Example 7 on a 6 mm thick glass substrate, where the low E coating is generally shown in FIG. 1(a).

图14为示出实施例7的光学特性的图表:最左边数据列中的在热处理之前涂覆态(退火)、在650℃下热处理12分钟之后(HT)、在650℃下热处理16分钟之后(HTX)和最右边数据列中的在650℃下热处理24分钟之后(HTXXX)。14 is a graph showing the optical characteristics of Example 7: as coated (annealed) before heat treatment, after heat treatment at 650°C for 12 minutes (HT), after heat treatment at 650°C for 16 minutes in the leftmost data column (HTX) and after heat treatment at 650°C for 24 minutes in the far right data column (HTXXX).

图15为示出在6mm厚玻璃基底上溅射沉积实施例8的低E涂层的溅射沉积条件的图表,其中该低E涂层由图1(a)一般性地示出。15 is a graph showing sputter deposition conditions for sputter deposition of the low E coating of Example 8 on a 6 mm thick glass substrate, where the low E coating is generally shown in FIG. 1(a).

图16为波长(nm)相对于折射率(n)的曲线图,其示出了实施例8的银层从涂覆态(AC)状态到热处理(HT)状态的折射率变化。16 is a graph of wavelength (nm) versus refractive index (n) showing the change in refractive index of the silver layer of Example 8 from the as-coated (AC) state to the heat-treated (HT) state.

图17为示出在6mm厚玻璃基底上溅射沉积实施例9的低E涂层的溅射沉积条件的图表,其中该低E涂层由图1(a)一般性地示出。17 is a graph showing sputter deposition conditions for sputter deposition of the low E coating of Example 9 on a 6 mm thick glass substrate, where the low E coating is generally shown in FIG. 1(a).

图18为示出实施例9的光学特性的图表:最左边数据列中在热处理之前涂覆态(退火)、在650℃下热处理12分钟之后(HT)和最右边数据列中在650℃下HT 16分钟之后(HTX)。18 is a graph showing the optical properties of Example 9: as coated (annealed) before heat treatment in the leftmost data column, after heat treatment at 650°C for 12 minutes (HT) and at 650°C in the rightmost data column After 16 minutes of HT (HTX).

图19为第一比较例涂覆制品的剖视图。19 is a cross-sectional view of a first comparative example coated article.

图20为根据本发明的一个实施方案的涂覆制品的剖视图,示出了实施例1-10的涂层。20 is a cross-sectional view of a coated article according to one embodiment of the present invention, showing the coatings of Examples 1-10.

图21为示出在3.1mm厚玻璃基底上溅射沉积实施例10的低E涂层的溅射沉积条件的图表,其中该低E涂层由图1(a)和图10一般性地示出。21 is a graph showing sputter deposition conditions for sputter deposition of the low E coating of Example 10 on a 3.1 mm thick glass substrate, where the low E coating is generally represented by FIGS. 1( a ) and 10 out.

图22为XRD Lin(cps)相对于2-θ-标度图,其示出了对于实施例10,由于HT导致的Ag(111)峰高的相对小的66%变化。22 is a graph of XRD Lin(cps) versus 2-theta-scale showing a relatively small 66% change in Ag(111) peak height due to HT for Example 10. FIG.

图23为XRD Lin(cps)相对于2-θ-标度图,其示出了对于第一比较例(CE)由于HT导致的Ag(111)峰高的相对大的166%变化。Figure 23 is an XRD Lin(cps) versus 2-theta-scale plot showing a relatively large 166% change in Ag(111) peak height due to HT for the first comparative example (CE).

图24为示出在6mm厚玻璃基底上溅射沉积实施例11的低E涂层的溅射沉积条件的图表,其中该低E涂层由图1(b)一般性地示出。24 is a graph showing sputter deposition conditions for sputter deposition of the low E coating of Example 11 on a 6 mm thick glass substrate, where the low E coating is generally shown in FIG. 1(b).

图25为示出在6mm厚玻璃基底上溅射沉积实施例12的低E涂层的溅射沉积条件的图表,其中该低E涂层由图1(b)一般性地示出。25 is a graph showing sputter deposition conditions for sputter deposition of the low E coating of Example 12 on a 6 mm thick glass substrate, where the low E coating is generally shown in FIG. 1(b).

图26为示出在6mm厚玻璃基底上溅射沉积实施例13的低E涂层的溅射沉积条件的图表,其中该低E涂层由图1(b)一般性地示出。26 is a graph showing sputter deposition conditions for sputter deposition of the low E coating of Example 13 on a 6 mm thick glass substrate, where the low E coating is generally shown in FIG. 1(b).

图27为示出实施例11-13的光学特性的图表:各自最左边数据列中在热处理之前涂覆态(退火)、在650℃下热处理12分钟之后(HT)、在650℃下HT 16分钟之后(HTX)和各自最右边数据列中在650℃下热处理24分钟之后(HTXXX)。Figure 27 is a graph showing the optical properties of Examples 11-13: as coated (annealed) before heat treatment, after heat treatment at 650°C for 12 minutes (HT), HT 16 at 650°C in the respective leftmost data column After minutes (HTX) and after heat treatment at 650°C for 24 minutes (HTXXX) in the respective rightmost data column.

图28为示出在6mm厚玻璃基底上溅射沉积实施例14的低E涂层的溅射沉积条件的图表,其中该低E涂层由图1(b)一般性地示出。28 is a graph showing sputter deposition conditions for sputter deposition of the low E coating of Example 14 on a 6 mm thick glass substrate, where the low E coating is generally shown in FIG. 1(b).

图29为示出实施例14的光学特性的图表:最左边数据列中的在热处理之前涂覆态(退火)、在650℃下热处理12分钟之后(HT)、在650℃下热处理16分钟之后(HTX)和最右边数据列中的在650℃下热处理24分钟之后(HTXXX)。29 is a graph showing the optical characteristics of Example 14: as coated (annealed) before heat treatment, after heat treatment at 650°C for 12 minutes (HT), after heat treatment at 650°C for 16 minutes in the leftmost data column (HTX) and after heat treatment at 650°C for 24 minutes in the far right data column (HTXXX).

图30为示出在6mm厚玻璃基底上溅射沉积实施例15和16的低E涂层的溅射沉积条件的图表,其中这些实施例的具有ZrO2的最底部电介质层的低E涂层由图1(b)一般性地示出。FIG. 30 is a graph showing sputter deposition conditions for the sputter deposition of the low E coatings of Examples 15 and 16 with a bottommost dielectric layer of ZrO2 on a 6 mm thick glass substrate. This is generally shown by Figure 1(b).

图31为示出实施例15和实施例16的光学特性的图表:最左边数据列中在热处理之前涂覆态(退火)、在650℃下热处理12分钟之后(FIT)和最右边数据列中在650℃下HT 16分钟之后(HTX)。31 is a graph showing the optical characteristics of Examples 15 and 16: as-coated (annealed) before heat treatment in the leftmost data column, after heat treatment at 650° C. for 12 minutes (FIT) and in the rightmost data column After 16 min HT at 650°C (HTX).

图32为示出在6mm厚玻璃基底上溅射沉积实施例17和实施例18的低E涂层的溅射沉积条件的图表,其中这些实施例的具有掺杂有约8%Al(重量%)的SiO2的最底部电介质层的低E涂层由图1(b)一般性地示出。32 is a graph showing sputter deposition conditions for the sputter deposition of the low E coatings of Example 17 and Example 18 on a 6 mm thick glass substrate having a ) The low-E coating of the bottom-most dielectric layer of SiO 2 is generally shown in Figure 1(b).

图33为示出实施例17和实施例18的光学特性的图表:最左边数据列中在热处理之前涂覆态(退火)、在650℃下热处理12分钟之后(HT)和最右边数据列中在650℃下HT 16分钟之后(HTX)。33 is a graph showing the optical properties of Examples 17 and 18: as-coated (annealed) before heat treatment in the leftmost data column, after heat treatment at 650° C. for 12 minutes (HT) and in the rightmost data column After 16 min HT at 650°C (HTX).

图34为示出在6mm厚玻璃基底上溅射沉积比较例2(CE 2)的低E涂层的溅射沉积条件的图表。34 is a graph showing sputter deposition conditions for sputter deposition of the low E coating of Comparative Example 2 (CE 2) on a 6 mm thick glass substrate.

图35为示出比较例2(CE 2)的光学特性的图表:最左边数据列中在热处理之前涂覆态(退火)、在650℃下热处理12分钟之后(HT)、在650℃下HT 16分钟之后(HTX)和最右边数据列中在650℃下热处理24分钟之后(HTXXX)。Figure 35 is a graph showing the optical properties of Comparative Example 2 (CE 2): as coated (annealed) before heat treatment, after heat treatment at 650°C for 12 minutes (HT), HT at 650°C in the leftmost data column After 16 minutes (HTX) and in the far right data column after heat treatment at 650°C for 24 minutes (HTXXX).

图36在顶部示出用于在6mm厚的玻璃基底上溅射沉积实施例19的低E涂层的溅射沉积条件,其中低E涂层总体上由图1(b)示出,并且在底部示出实施例19的光学特性:在热处理之前涂覆态(退火;AC)、在650℃下热处理12分钟之后(HT)、在650℃下热处理16分钟之后(HTX)和在650℃下热处理24分钟之后(HTXXX)。Figure 36 shows, at the top, sputter deposition conditions for sputter deposition of the low E coating of Example 19 on a 6 mm thick glass substrate, where the low E coating is generally shown in Figure 1(b) and in The bottom shows the optical properties of Example 19: as coated before heat treatment (annealed; AC), after heat treatment at 650°C for 12 minutes (HT), after heat treatment at 650°C for 16 minutes (HTX) and at 650°C After heat treatment for 24 minutes (HTXXX).

图37在顶部示出用于在6mm厚的玻璃基底上溅射沉积实施例20的低E涂层的溅射沉积条件,其中低E涂层总体上由图1(e)示出,并且在底部示出实施例20的光学特性:在热处理之前涂覆态(退火;AC)、在650℃下热处理12分钟之后(HT)、在650℃下热处理16分钟之后(HTX)和在650℃下热处理24分钟之后(HTXXX)。Figure 37 shows, at the top, sputter deposition conditions for sputter deposition of the low E coating of Example 20 on a 6 mm thick glass substrate, where the low E coating is generally shown in Figure 1(e) and in The bottom shows the optical properties of Example 20: as coated before heat treatment (annealed; AC), after heat treatment at 650°C for 12 minutes (HT), after heat treatment at 650°C for 16 minutes (HTX) and at 650°C After heat treatment for 24 minutes (HTXXX).

图38在顶部示出用于在6mm厚的玻璃基底上溅射沉积实施例21的低E涂层的溅射沉积条件,其中低E涂层总体上由图1(e)示出,并且在底部示出实施例21的光学特性:在热处理之前涂覆态(退火;AC)、在650℃下热处理12分钟之后(HT)、在650℃下热处理16分钟之后(HTX)和在650℃下热处理24分钟之后(HTXXX)。FIG. 38 shows at the top sputter deposition conditions for sputter deposition of the low E coating of Example 21 on a 6 mm thick glass substrate, where the low E coating is generally shown in FIG. The bottom shows the optical properties of Example 21: as coated before heat treatment (annealed; AC), after heat treatment at 650°C for 12 minutes (HT), after heat treatment at 650°C for 16 minutes (HTX) and at 650°C After heat treatment for 24 minutes (HTXXX).

图39在顶部示出用于在6mm厚的玻璃基底上溅射沉积实施例22的低E涂层的溅射沉积条件,其中低E涂层总体上由图1(d)示出,并且在底部示出实施例22的光学特性:在热处理之前涂覆态(退火;AC)、在650℃下热处理12分钟之后(HT)、在650℃下热处理16分钟之后(HTX)和在650℃下热处理24分钟之后(HTXXX)。FIG. 39 shows at the top sputter deposition conditions for sputter deposition of the low E coating of Example 22 on a 6 mm thick glass substrate, where the low E coating is generally shown in FIG. 1(d) and in The bottom shows the optical properties of Example 22: as coated before heat treatment (annealed; AC), after heat treatment at 650°C for 12 minutes (HT), after heat treatment at 650°C for 16 minutes (HTX) and at 650°C After heat treatment for 24 minutes (HTXXX).

图40在顶部示出用于在6mm厚的玻璃基底上溅射沉积实施例23的低E涂层的溅射沉积条件,其中低E涂层总体上由图1(f)示出,并且在底部示出实施例23的光学特性:在热处理之前涂覆态(退火;AC)、在650℃下热处理12分钟之后(HT)、在650℃下热处理16分钟之后(HTX)和在650℃下热处理24分钟之后(HTXXX)。Figure 40 shows, at the top, sputter deposition conditions for sputter deposition of the low E coating of Example 23 on a 6 mm thick glass substrate, where the low E coating is generally shown in Figure 1(f), and in The bottom shows the optical properties of Example 23: as coated before heat treatment (annealed; AC), after heat treatment at 650°C for 12 minutes (HT), after heat treatment at 650°C for 16 minutes (HTX) and at 650°C After heat treatment for 24 minutes (HTXXX).

图41在顶部示出用于在6mm厚的玻璃基底上溅射沉积实施例24的低E涂层的溅射沉积条件,其中低E涂层总体上由图1(f)示出,并且在底部示出实施例24的光学特性:在热处理之前涂覆态(退火;AC)、在650℃下热处理12分钟之后(HT)、在650℃下热处理16分钟之后(HTX)和在650℃下热处理24分钟之后(HTXXX)。Figure 41 shows at the top sputter deposition conditions for sputter deposition of the low E coating of Example 24 on a 6 mm thick glass substrate, where the low E coating is generally shown in Figure 1(f) and in The bottom shows the optical properties of Example 24: as coated before heat treatment (annealed; AC), after heat treatment at 650°C for 12 minutes (HT), after heat treatment at 650°C for 16 minutes (HTX) and at 650°C After heat treatment for 24 minutes (HTXXX).

图42在顶部示出用于在6mm厚的玻璃基底上溅射沉积实施例25的低E涂层的溅射沉积条件,其中低E涂层总体上由图1(g)示出,并且在底部示出实施例25的光学特性:在热处理之前涂覆态(退火;AC)、在650℃下热处理12分钟之后(HT)、在650℃下热处理16分钟之后(HTX)和在650℃下热处理24分钟之后(HTXXX)。42 shows at the top sputter deposition conditions for sputter deposition of the low E coating of Example 25 on a 6 mm thick glass substrate, where the low E coating is generally shown in FIG. The bottom shows the optical properties of Example 25: as coated before heat treatment (annealed; AC), after heat treatment at 650°C for 12 minutes (HT), after heat treatment at 650°C for 16 minutes (HTX) and at 650°C After heat treatment for 24 minutes (HTXXX).

图43在顶部示出用于在6mm厚的玻璃基底上溅射沉积实施例26的低E涂层的溅射沉积条件,其中低E涂层总体上由图1(h)示出,并且在底部示出实施例26的光学特性:在热处理之前涂覆态(退火;AC)、在650℃下热处理12分钟之后(HT)、在650℃下热处理16分钟之后(HTX)和在650℃下热处理24分钟之后(HTXXX)。43 shows at the top sputter deposition conditions for sputter deposition of the low E coating of Example 26 on a 6 mm thick glass substrate, where the low E coating is generally shown in FIG. 1(h) and in The bottom shows the optical properties of Example 26: as coated before heat treatment (annealed; AC), after heat treatment at 650°C for 12 minutes (HT), after heat treatment at 650°C for 16 minutes (HTX) and at 650°C After heat treatment for 24 minutes (HTXXX).

图44在顶部示出用于在6mm厚的玻璃基底上溅射沉积实施例27的低E涂层的溅射沉积条件,其中低E涂层总体上由图1(b)示出,并且在底部示出实施例27的光学特性:在热处理之前涂覆态(退火;AC)、在650℃下热处理12分钟之后(HT)、在650℃下热处理16分钟之后(HTX)和在650℃下热处理24分钟之后(HTXXX)。44 shows at the top sputter deposition conditions for sputter deposition of the low E coating of Example 27 on a 6 mm thick glass substrate, where the low E coating is generally shown in FIG. The bottom shows the optical properties of Example 27: as coated before heat treatment (annealed; AC), after heat treatment at 650°C for 12 minutes (HT), after heat treatment at 650°C for 16 minutes (HTX) and at 650°C After heat treatment for 24 minutes (HTXXX).

图45在顶部示出用于在6mm厚的玻璃基底上溅射沉积实施例28的低E涂层的溅射沉积条件,其中低E涂层总体上由图1(e)示出,并且在底部示出实施例28的光学特性:在热处理之前涂覆态(退火;AC)、在650℃下热处理12分钟之后(HT)、在650℃下热处理16分钟之后(HTX)和在650℃下热处理24分钟之后(HTXXX)。Figure 45 shows, at the top, sputter deposition conditions for sputter deposition of the low E coating of Example 28 on a 6 mm thick glass substrate, where the low E coating is generally shown in Figure 1(e), and in The bottom shows the optical properties of Example 28: as coated before heat treatment (annealed; AC), after heat treatment at 650°C for 12 minutes (HT), after heat treatment at 650°C for 16 minutes (HTX) and at 650°C After heat treatment for 24 minutes (HTXXX).

图46在顶部示出用于在6mm厚的玻璃基底上溅射沉积实施例29的低E涂层的溅射沉积条件,其中低E涂层总体上由图1(h)示出,不同的是实施例29中不提供层2”,并且在底部示出实施例29的光学特性:在热处理之前涂覆态(退火;AC)、在650℃下热处理12分钟之后(HT)、在650℃下热处理16分钟之后(HTX)和在650℃下热处理24分钟之后(HTXXX)。Figure 46 shows at the top sputter deposition conditions for the sputter deposition of the low E coating of Example 29 on a 6 mm thick glass substrate, where the low E coating is generally shown in Figure 1(h), with different Layer 2" is not provided in Example 29, and the optical properties of Example 29 are shown at the bottom: as coated (annealed; AC) before heat treatment, after heat treatment at 650°C for 12 minutes (HT), at 650°C After heat treatment at 650° C. for 16 minutes (HTX) and after heat treatment at 650° C. for 24 minutes (HTXXX).

图47在顶部示出用于在6mm厚的透明玻璃基底上溅射沉积实施例30的低E涂层的溅射沉积条件,其中低E涂层总体上由图1(i)示出,并且在底部示出单片测量的实施例30的光学特性:在热处理之前涂覆态(退火;AC)、在650℃下热处理12分钟之后(HT)和在650℃下HT 16分钟之后(HTX)。Figure 47 shows at the top sputter deposition conditions for sputter deposition of the low E coating of Example 30 on a 6 mm thick transparent glass substrate, wherein the low E coating is generally shown in Figure 1(i), and The optical properties of Example 30 measured monolithically are shown at the bottom: as-coated before heat treatment (annealed; AC), after heat treatment at 650°C for 12 minutes (HT) and after HT at 650°C for 16 minutes (HTX) .

图48在顶部示出用于在6mm厚的透明玻璃基底上溅射沉积实施例31的低E涂层的溅射沉积条件,其中低E涂层总体上由图1(i)示出,并且在底部示出单片测量的实施例31的光学特性:在热处理之前涂覆态(退火;AC)、在650℃下热处理12分钟之后(HT)和在650℃下HT 16分钟之后(HTX)。Figure 48 shows at the top sputter deposition conditions for sputter deposition of the low E coating of Example 31 on a 6 mm thick transparent glass substrate, wherein the low E coating is generally shown in Figure 1(i), and The optical properties of Example 31 measured monolithically are shown at the bottom: as-coated (annealed; AC) before heat treatment, after heat treatment at 650°C for 12 minutes (HT) and after HT at 650°C for 16 minutes (HTX) .

图49在顶部示出用于在6mm厚的透明玻璃基底上溅射沉积实施例32的低E涂层的溅射沉积条件,其中低E涂层总体上由图1(i)示出,并且在底部示出单片测量的实施例32的光学特性:在热处理之前涂覆态(退火;AC)、在650℃下热处理12分钟之后(HT)和在650℃下HT 16分钟之后(HTX)。49 shows at the top sputter deposition conditions for sputter deposition of the low E coating of Example 32 on a 6 mm thick transparent glass substrate, where the low E coating is generally shown in FIG. 1(i), and The optical properties of Example 32 measured monolithically are shown at the bottom: as-coated (annealed; AC) before heat treatment, after heat treatment at 650°C for 12 minutes (HT) and after HT at 650°C for 16 minutes (HTX) .

图50在顶部示出用于在6mm厚的透明玻璃基底上溅射沉积实施例33的低E涂层的溅射沉积条件,其中低E涂层总体上由图1(i)示出,并且在底部示出单片测量的实施例33的光学特性:在热处理之前涂覆态(退火;AC)、在650℃下热处理12分钟之后(HT)和在650℃下HT 16分钟之后(HTX)。Figure 50 shows at the top sputter deposition conditions for sputter deposition of the low E coating of Example 33 on a 6 mm thick transparent glass substrate, where the low E coating is generally shown in Figure 1(i), and The optical properties of Example 33 measured monolithically are shown at the bottom: as-coated (annealed; AC) before heat treatment, after heat treatment at 650°C for 12 minutes (HT) and after HT at 650°C for 16 minutes (HTX) .

图51示出在HT之前和之后的使用金属Zr靶(上图)和陶瓷ZrOx靶(下图)溅射沉积ZrO2层的曲线图,并且显示当使用金属靶时该层包括单斜晶相(参见m-ZrO2处的峰),而当在该特定情况下使用陶瓷靶时该层不包括单斜晶相。Figure 51 shows graphs of sputter deposition of a ZrO2 layer using a metallic Zr target (upper image) and a ceramic ZrOx target (lower image ) before and after HT, and showing that the layer comprises a monoclinic crystal when a metal target is used phase (see peak at m - ZrO2), while the layer does not include the monoclinic phase when a ceramic target is used in this particular case.

图52是在某些方面类似于图1(i)的根据本发明示例性实施方案的涂覆制品的剖视图,其包括实施例34-42和比较例(CE)43-47的层叠堆。52 is a cross-sectional view of a coated article according to an exemplary embodiment of the present invention similar in some respects to FIG. 1(i), including the layer stacks of Examples 34-42 and Comparative Examples (CE) 43-47.

图53示出实施例34-42的光学数据:各实施例最左边数据列中在热处理之前涂覆态(AC;退火)以及各实施例右边数据列中在650℃下热处理12分钟之后(HT),实施例34-42具有如图1(i)和图52所示的涂层叠堆,其中用金属靶沉积单斜晶ZrO2层,并且实施例34-42的层厚度如图55所示;其中样品7982是实施例34,样品8077是实施例35,样品8085是实施例36,样品8090是实施例37,样品8091是实施例38,样品8097是实施例39,样品8186是实施例40,样品8187是实施例41,并且样品8202是实施例42。Figure 53 shows the optical data for Examples 34-42: as coated (AC; annealed) before heat treatment in the leftmost data column of each example and after heat treatment at 650°C for 12 minutes (HT) in the right data column of each example ), Examples 34-42 have coating stacks as shown in Figures 1 (i) and 52, in which the monoclinic ZrO2 layer was deposited with a metal target and the layer thicknesses of Examples 34-42 are shown in Figure 55 where sample 7982 is embodiment 34, sample 8077 is embodiment 35, sample 8085 is embodiment 36, sample 8090 is embodiment 37, sample 8091 is embodiment 38, sample 8097 is embodiment 39, and sample 8186 is embodiment 40, Sample 8187 is Example 41, and Sample 8202 is Example 42.

图54示出比较例(CE)43-47的光学数据:各实施例最左边数据列中在热处理之前涂覆态(AC;退火)以及各实施例右边数据列中在650℃下热处理12分钟之后(HT),实施例43-47具有如图1(i)和图52所示的涂层叠堆,其中用陶瓷靶沉积非单斜晶ZrO2层,并且实施例43-47的层厚度如图56所示;其中样品8392是CE 43,样品8394是CE 44,样品8395是CE45,样品8396是CE 46,并且样品8397是CE 47。Figure 54 shows optical data for Comparative Examples (CE) 43-47: as coated (AC; annealed) prior to heat treatment in the leftmost data column of each example and heat treated at 650°C for 12 minutes in the right data column of each example After (HT), Examples 43-47 had the coating stacks shown in Figure 1(i) and Figure 52, in which a non - monoclinic ZrO2 layer was deposited with a ceramic target, and the layer thicknesses of Examples 43-47 As shown in Figure 56; where sample 8392 is CE 43, sample 8394 is CE 44, sample 8395 is CE45, sample 8396 is CE 46, and sample 8397 is CE 47.

图55为示出具有单斜晶ZrO2层的实施例37的沉积工艺条件和层厚度的图表,其中每层的溅射工艺期间的总氧气流量(ml)由O2设定值、O2调节和O2偏移之和表示,ZrO2层的溅射沉积期间的高氧气流量有助于提供实施例37的ZrO2层的单斜晶相(单斜晶实施例34-36和38-42具有类似的工艺条件)。55 is a graph showing deposition process conditions and layer thicknesses for Example 37 with monoclinic ZrO layers, where the total oxygen flow ( ml ) during the sputtering process for each layer is set by O , O The sum of the conditioning and O offset indicates that the high oxygen flow during sputter deposition of the ZrO layer helps to provide the monoclinic phase of the ZrO layer of Example 37 ( monoclinic Examples 34-36 and 38- 42 with similar process conditions).

图56为示出具有非单斜晶ZrO2层的比较例(CE)44的沉积工艺条件和层厚度的图表,其中每层的溅射工艺期间的总氧气流量(ml)由O2设定值、O2调节和O2偏移之和表示,ZrO2层溅射沉积期间的低氧气流量与陶瓷靶一起有助于提供实施例44的ZrO2层的非单斜晶相(非单斜晶实施例43和45-47具有类似的工艺条件)。Figure 56 is a graph showing deposition process conditions and layer thicknesses for Comparative Example (CE) 44 with non - monoclinic ZrO layers, where the total oxygen flow (ml ) during the sputtering process for each layer was set by O The sum of the value, O adjustment, and O offset indicates that the low oxygen flow during sputter deposition of the ZrO layer, together with the ceramic target, helps to provide the non - monoclinic phase (non - monoclinic ) of the ZrO layer of Example 44. Crystal Examples 43 and 45-47 had similar process conditions).

图57为示出具有经由陶瓷靶沉积的单斜晶ZrO2层的实施例48的沉积工艺条件和层厚度的图表。57 is a graph showing deposition process conditions and layer thicknesses for Example 48 with a monoclinic ZrO 2 layer deposited via a ceramic target.

图58为示出具有不同热处理时间的实施例48的ΔE*值的图表。FIG. 58 is a graph showing ΔE* values for Example 48 with different heat treatment times.

图59为示出实施例48的涂层的光学数据和薄层电阻数据的图表。59 is a graph showing optical data and sheet resistance data for the coating of Example 48. FIG.

具体实施方式Detailed ways

现在更具体地参考附图,其中类似的附图标号在整个若干视图中表示类似的部件/层/材料。Reference is now made more particularly to the drawings, wherein like reference numerals refer to like parts/layers/materials throughout the several views.

本发明的某些实施方案提供了一种可用于涂覆制品中的涂层或层体系,所述涂层或层体系可单片用于窗、隔热玻璃(IG)窗单元(例如,IG窗单元应用中的表面#2或表面#3上)、层压窗单元、车辆挡风玻璃和/或其他车辆或建筑或住宅窗户应用中。本发明的某些实施方案提供了组合高可见光透射率、HT之前和/或之后的良好耐久性(机械和/或化学)以及热处理时的良好颜色稳定性中的一者或多者的层体系。本文将示出某些层叠堆如何令人惊讶地实现这种独特的组合。Certain embodiments of the present invention provide a coating or layer system useful in coated articles that can be used monolithically on windows, insulating glass (IG) window units (eg, IG surface #2 or surface #3 in window unit applications), laminated window units, vehicle windshields, and/or other vehicle or architectural or residential window applications. Certain embodiments of the present invention provide layer systems that combine one or more of high visible light transmission, good durability (mechanical and/or chemical) before and/or after HT, and good color stability upon heat treatment . This article will show how certain layer stacks surprisingly achieve this unique combination.

关于颜色稳定性,本发明的某些实施方案在单片热处理(例如,热回火或热弯曲)和/或双窗格环境(诸如IG单元或挡风玻璃)的情况下具有优异的颜色稳定性(即,低ΔE*值;其中Δ指示鉴于热处理的变化)。此类热处理(HT)通常需要将涂覆的基底加热到至少约1100℉(593℃)和至多1450℉(788℃)[更优选地约1100℉至1200℉,并且最优选地1150℉-1200℉]的温度持续足够的时间段以确保最终结果(例如,回火、弯曲和/或热强化)。本发明的某些实施方案组合了(i)热处理下的颜色稳定性以及(ii)使用含银层用于选择性IR反射中的一者或多者。With regard to color stability, certain embodiments of the present invention have excellent color stability in the case of monolithic heat treatments (eg, thermal tempering or thermal bending) and/or dual pane environments (such as IG units or windshields) (ie, low ΔE* values; where Δ indicates the change due to heat treatment). Such heat treatment (HT) typically requires heating the coated substrate to at least about 1100°F (593°C) and at most 1450°F (788°C) [more preferably about 1100°F to 1200°F, and most preferably 1150°F-1200°F °F] for a sufficient period of time to ensure the final result (eg, tempering, bending, and/or heat strengthening). Certain embodiments of the present invention combine one or more of (i) color stability under heat treatment and (ii) use of a silver-containing layer for selective IR reflection.

本发明的示例性实施方案涉及在热处理(例如,热回火)之前和之后均具有如肉眼所观察到的大致相同的颜色特性的低E涂覆制品,以及对应的方法。在某些示例性实施方案中,此类制品可结合以下一者或多者:(1)期望的可见光透射特性,(2)热处理之前和/或之后的良好耐久性,(3)指示热处理(HT)时的颜色稳定性的低ΔE*值,和/或(4)设计成调节可见光透射率并为涂覆制品提供期望的着色,同时保持耐久性和/或热稳定性的吸收膜。Exemplary embodiments of the present invention relate to low-E coated articles having approximately the same color characteristics as observed with the naked eye, both before and after heat treatment (eg, thermal tempering), and corresponding methods. In certain exemplary embodiments, such articles may incorporate one or more of: (1) desirable visible light transmission characteristics, (2) good durability before and/or after heat treatment, (3) indicative of heat treatment ( low ΔE* values for color stability at HT), and/or (4) absorbing films designed to adjust visible light transmittance and provide the desired coloration to the coated article while maintaining durability and/or thermal stability.

在某些示例性实施方案中,吸收膜可以是多层吸收膜,其包括具有或包含银(Ag)的第一层57,以及具有或包含可部分或完全氧化的NiCr(NiCrOx)的第二层59。参见例如图1(i)。因此,在某些示例性实施方案中,这种多层吸收膜57、59可以由Ag/NiCrOx的层序列构成。由于HT或其他因素,来自一层的元素可以扩散到相邻层中。在某些示例实施方案中,吸收体的NiCr基层59可以最初以金属形式或作为低氧化物沉积。在某些示例性实施方案中,银基层57可以是连续层,和/或可以任选地被掺杂。此外,吸收膜的银基层57优选地足够薄,使得其主要功能是吸收可见光并提供期望的着色(与厚得多并主要用作IR反射层相反)。NiCr或NiCrOx 59设置在吸收膜的银57上方并与之接触,以便保护银,并且还有助于吸收。在某些示例性实施方案中,吸收膜的银基层57在本发明的某些示例性实施方案中可以不大于约

Figure BDA0003538370550000161
厚,更优选地不大于约
Figure BDA0003538370550000162
厚,更优选地不大于约
Figure BDA0003538370550000168
厚,并且最优选地不大于约
Figure BDA0003538370550000169
厚,并且可能不大于约
Figure BDA0003538370550000163
厚。在某些示例性实施方案中,吸收膜的NiCr基层59可为约
Figure BDA0003538370550000164
厚,更优选地约
Figure BDA0003538370550000165
厚,并且最优选地约
Figure BDA0003538370550000166
Figure BDA0003538370550000167
厚。In certain exemplary embodiments, the absorber film may be a multilayer absorber film that includes a first layer 57 having or comprising silver (Ag), and a second layer having or comprising NiCr (NiCrO x ) which is partially or fully oxidizable 59 on the second floor. See eg Figure 1(i). Thus, in certain exemplary embodiments, such multilayer absorber films 57, 59 may be composed of a layer sequence of Ag/ NiCrOx . Elements from one layer can diffuse into adjacent layers due to HT or other factors. In certain example embodiments, the NiCr base layer 59 of the absorber may be deposited initially in metallic form or as a suboxide. In certain exemplary embodiments, the silver-based layer 57 may be a continuous layer, and/or may be optionally doped. Furthermore, the silver base layer 57 of the absorbing film is preferably thin enough that its primary function is to absorb visible light and provide the desired coloration (as opposed to being much thicker and functioning primarily as an IR reflective layer). NiCr or NiCrO x 59 is placed over and in contact with the silver 57 of the absorber film in order to protect the silver and also to aid in absorption. In certain exemplary embodiments, the silver-based layer 57 of the absorber film may, in certain exemplary embodiments of the present invention, be no greater than about
Figure BDA0003538370550000161
thick, more preferably no greater than about
Figure BDA0003538370550000162
thick, more preferably no greater than about
Figure BDA0003538370550000168
thick, and most preferably no greater than about
Figure BDA0003538370550000169
thick, and may not be greater than approx.
Figure BDA0003538370550000163
thick. In certain exemplary embodiments, the NiCr based layer 59 of the absorber film may be about
Figure BDA0003538370550000164
thick, more preferably about
Figure BDA0003538370550000165
thick, and most preferably about
Figure BDA0003538370550000166
Figure BDA0003538370550000167
thick.

在本发明的某些示例性实施方案中,单层NiCr(或其他合适的材料)也可用作低E涂层中的吸收膜。例如,参见图1(d)和图1(f)中的吸收膜42。然而,已经令人惊讶地发现,与作为吸收体的单层NiCr相比,在吸收膜(单层或多层吸收膜)中使用银57提供了几个意想不到的优点。首先,已经发现,作为吸收体的单层NiCr倾向于在某些低E涂层涂覆制品中引起微黄色着色,这在某些情况下可能是不希望的。相反,已经令人惊讶地发现,在吸收膜中使用银57倾向于避免这种微黄色着色和/或反而提供所得涂覆制品的更期望的中性着色。因此,已经发现在吸收膜中使用银57提供改进的光学特性。第二,使用单层NiCr 42作为吸收体往往还涉及在NiCr的两侧上提供氮化硅基层,以便将NiCr直接夹在其间并与其接触。例如,参见图1(d)和图1(f)。已经发现,在涂层叠堆中的某些位置提供氮化硅可能导致HT时的热稳定性受损。相反,已经令人惊讶地发现,当在吸收膜中使用银时,不需要一对直接相邻的氮化硅层,从而可以改善HT时的热稳定性。因此,已经发现在吸收膜中使用银57提供改善的热稳定性,包括较低的ΔE*值,并因此提供改善的相同涂层的HT与非HT形式之间的匹配性。在吸收膜中使用银还可以在某些情况下提供改善的可制造性。In certain exemplary embodiments of the present invention, a single layer of NiCr (or other suitable material) may also be used as an absorber film in a low E coating. See, for example, absorber film 42 in Figures 1(d) and 1(f). However, it has been surprisingly found that the use of silver 57 in absorber films (single or multilayer absorber films) provides several unexpected advantages compared to single layer NiCr as absorber. First, it has been found that a single layer of NiCr as an absorber tends to cause a yellowish tint in certain low E coating coated articles, which may be undesirable in certain circumstances. In contrast, it has been surprisingly found that the use of silver 57 in the absorbent film tends to avoid this yellowish coloration and/or instead provides a more desirable neutral coloration of the resulting coated article. Accordingly, the use of silver 57 in the absorber film has been found to provide improved optical properties. Second, using a single layer of NiCr 42 as the absorber often also involves providing a silicon nitride base layer on both sides of the NiCr so that the NiCr is directly sandwiched between and in contact with it. See, for example, Figures 1(d) and 1(f). It has been found that providing silicon nitride at certain locations in the coating stack may result in compromised thermal stability during HT. In contrast, it has been surprisingly found that when silver is used in the absorber film, a pair of immediately adjacent silicon nitride layers is not required, thereby improving thermal stability at HT. Accordingly, the use of silver 57 in the absorber film has been found to provide improved thermal stability, including lower ΔE* values, and thus improved matching between HT and non-HT versions of the same coating. The use of silver in absorber films can also provide improved manufacturability in some cases.

令人惊讶和出乎意料地,已发现在低E涂层30中的具有或包含银的红外(IR)反射层7(和/或19)正下方设置具有或包含掺杂有至少一种掺杂物(例如,Sn)的氧化锌的沉积态结晶或基本上结晶的层3、3”(和/或13)(例如至少50%结晶,更优选至少60%结晶)并与之直接接触具有显著改善涂层的热稳定性(即,降低ΔE*值)的效应。如本文所用,“基本上结晶”意指至少50%结晶、更优选地至少60%结晶、并且最优选地至少70%结晶。在本发明的各种示例性实施方案中,一个或多个此类结晶或基本上结晶的层3、3”、13可设置在包含银7、19的一个或多个对应IR反射层下方。因此,在本发明的各种实施方案中,在具有或包含银的红外(IR)反射层7和/或19正下方的具有或包含掺杂有至少一种掺杂物(例如,Sn)的氧化锌的结晶或基本上结晶的层3(或3”)和/或13可用于单银低E涂层、双银低E涂层(例如,诸如图1或图20所示)或三银低E涂层。在某些示例性实施方案中,具有或包含氧化锌的结晶或基本上结晶的层3和/或13掺杂有约1%-30%Sn、更优选地约1%-20%Sn、更优选地约5%-15%Sn,其中一个示例为约10%Sn(以重量%计)。掺杂有Sn的氧化锌在诸如经由溅射沉积技术从具有或包含Zn和Sn的至少一个溅射靶在层3和/或13上处于沉积态的结晶相或基本上结晶相(与无定形或纳米晶相对)。沉积态结晶相的掺杂的氧化锌基层3和/或13与银7和/或19和玻璃1之间的层组合,允许涂覆制品在任选的HT时实现改善的热稳定性(降低ΔE*值)。据信,沉积态结晶相的掺杂的氧化锌基层3和/或13与银和玻璃之间的层组合,允许沉积在其上的银7和/或19具有改善的晶体结构,所述晶体结构具有纹理但具有一些无规取向的晶粒,使得其折射率(n)在任选的HT时变化较小,从而允许实现改善的热稳定性。Surprisingly and unexpectedly, it has been found that the infrared (IR) reflective layer 7 (and/or 19 ) in the low E coating 30 with or comprising silver is disposed with or doped with at least one dopant. As-deposited crystalline or substantially crystalline layers 3, 3" (and/or 13) (eg, at least 50% crystalline, more preferably at least 60% crystalline) of zinc oxide of impurities (eg, Sn) and in direct contact therewith have The effect of significantly improving the thermal stability of the coating (ie, reducing the ΔE* value). As used herein, "substantially crystalline" means at least 50% crystalline, more preferably at least 60% crystalline, and most preferably at least 70% crystalline Crystalline. In various exemplary embodiments of the invention, one or more such crystalline or substantially crystalline layers 3, 3", 13 may be provided over one or more corresponding IR reflective layers comprising silver 7, 19 below. Thus, in various embodiments of the present invention, the infrared (IR) reflective layers 7 and/or 19 with or containing silver directly below the Crystalline or substantially crystalline layers 3 (or 3") and/or 13 of zinc oxide may be used for single silver low E coatings, double silver low E coatings (eg, such as shown in Figure 1 or Figure 20) or triple silver Low E coating. In certain exemplary embodiments, crystalline or substantially crystalline layers 3 and/or 13 having or comprising zinc oxide are doped with about 1%-30% Sn, more preferably about 1%- 20% Sn, more preferably about 5%-15% Sn, one example of which is about 10% Sn (by weight %). Zinc oxide doped with Sn can be obtained from materials having or containing Zn and At least one sputtering target of Sn is in the as-deposited crystalline phase or substantially crystalline phase (as opposed to amorphous or nanocrystalline) on layers 3 and/or 13. The as-deposited crystalline phase of the doped zinc oxide base layer 3 and/or Or 13 in combination with layers between silver 7 and/or 19 and glass 1, allowing the coated article to achieve improved thermal stability (reduced ΔE* value) upon optional HT. It is believed that the doping of the as-deposited crystalline phase A hybrid zinc oxide base layer 3 and/or 13 and a layer combination between silver and glass, allowing the silver 7 and/or 19 deposited thereon to have an improved crystal structure that is textured but with some random orientation grains so that their refractive index (n) changes less with optional HT, allowing for improved thermal stability.

还令人惊讶和出乎意料地发现,设置具有或包含氧化硅、氧化锆、氧化硅锆和/或氮氧化硅锆(例如,SiZrOx、ZrO2、SiO2和/或SiZrOxNy)的电介质层(例如,2和/或2”)还提供涂覆制品的改善的热稳定性,如例如图1(b)-1(i)所示,并且因此在热处理(HT)诸如热回火时降低ΔE*值。在某些示例性实施方案中,可提供具有或包含氧化硅、氧化锆、氧化硅锆和/或氮氧化硅锆(例如,SiZrOx、ZrO2、SiO2和/或SiZrOxNy)的至少一个电介质层(例如,2和/或2”):(i)在所有基于银的IR反射层下方的涂层的底部电介质部分中(例如,参见图1(b)-1(i)),和/或(ii)在介于一对基于银的IR反射层之间的涂层的中间电介质部分中(例如,参见图1(e)-1(i))。例如,在本发明的某些示例性实施方案中,具有或包含氧化硅、氧化锆、氧化硅锆和/或氮氧化硅锆的电介质层(例如,2和/或2”)可设置在最下层掺杂的氧化锌基层(例如,3)的正下方并与之接触,和/或设置在低E涂层的中间电介质部分中的一对含氧化锌层之间(例如,介于11和13之间,或介于11和3”之间)。It was also surprisingly and unexpectedly found that the arrangement has or contains silicon oxide, zirconium oxide, silicon zirconium oxide and/or silicon zirconium oxynitride (eg, SiZrO x , ZrO 2 , SiO 2 and/or SiZrO x N y ) The dielectric layers (eg, 2 and/or 2") also provide improved thermal stability of the coated article, as shown, for example, in Figures 1(b)-1(i), and thus during thermal processing (HT) such as thermal reclamation Fire reduces the ΔE* value. In certain exemplary embodiments, there may be provided with or comprising silicon oxide, zirconium oxide, silicon zirconium oxide, and/or silicon zirconium oxynitride (eg, SiZrO x , ZrO 2 , SiO 2 and/or or SiZrOxNy ) at least one dielectric layer (eg, 2 and/or 2"): ( i ) in the bottom dielectric portion of the coating below all silver-based IR reflective layers (eg, see Figure 1(b) )-1(i)), and/or (ii) in the intermediate dielectric portion of the coating between a pair of silver-based IR reflective layers (see, eg, Figures 1(e)-1(i)) . For example, in certain exemplary embodiments of the present invention, a dielectric layer (eg, 2 and/or 2") having or comprising silicon oxide, zirconium oxide, silicon zirconium oxide, and/or silicon zirconium oxynitride may be disposed at the most directly below and in contact with the underlying doped zinc oxide based layer (eg, 3), and/or disposed between a pair of zinc oxide-containing layers (eg, between 11 and 11 ) in the intermediate dielectric portion of the low-E coating between 13, or between 11 and 3").

在本发明的各种示例性实施方案中,具有或包含氧化硅(例如,SiO2)、氧化锆(例如,ZrO2)、氧化硅锆和/或氮氧化硅锆的电介质层(例如,2和/或2”)可与或可不与具有或包含氧化锌的沉积态的结晶或基本上结晶的(例如,至少50%结晶的,更优选地至少60%结晶的)层(例如,3个和/或13个)组合紧接设置在红外(IR)反射层下方,所述氧化锌掺杂有至少一种掺杂物(例如Sn)。可一起使用但不需要一起使用的两种方法改善了热稳定性,从而降低了ΔE*值。例如,在使用具有或包含氧化硅(例如SiO2)、氧化锆(例如ZrO2)、氧化硅锆和/或氮氧化硅锆的电介质层(例如,2和/或2”)的某些实施方案中,紧接在一个或两个银下方的接触层/晶种层可具有或可包含掺杂有铝(而非Sn)的氧化锌,并且该接触层/晶种层无需为结晶的(例如,参见图42、43和46;以及实施例25、26和29)。 In various exemplary embodiments of the present invention, a dielectric layer (eg, 2 and/or 2") may or may not be combined with as-deposited crystalline or substantially crystalline (eg, at least 50% crystalline, more preferably at least 60% crystalline) layers (eg, 3 and/or 13) in combination immediately below the infrared (IR) reflective layer, the zinc oxide doped with at least one dopant (eg Sn). The two methods that can be used together but do not need to be used together improve For example, when using dielectric layers having or containing silicon oxide (eg, SiO 2 ), zirconium oxide (eg, ZrO 2 ), silicon zirconium oxide, and/or silicon zirconium oxynitride (eg, , 2 and/or 2"), the contact/seed layer immediately below one or both silvers may have or may comprise zinc oxide doped with aluminum (rather than Sn), and The contact/seed layer need not be crystalline (eg, see Figures 42, 43, and 46; and Examples 25, 26, and 29).

在某些示例性实施方案中,已经令人惊讶和出乎意料地发现,最初溅射沉积具有或包含氧化锆、氮氧化锆、氧化硅锆和/或氮氧化硅锆(例如SiZrOx、ZrO2、SiO2和/或SiZrOxNy)的电介质层2和/或2”以包含单斜晶相晶体结构是有利的,因为其导致涂覆制品在热处理(HT)时具有改善的热稳定性(较低的ΔE*值)和/或减少的可见光透射率(例如Tvis或TY)变化。例如,参见图1(a)-1(i)、图51-53和图55。在某些示例实施方案中,电介质层2和/或2”还可以包含诸如Ti和/或Nb的其他材料。在某些示例性实施方案中,电介质层(例如,ZrO2)2和/或2”的单斜晶相(例如,参见图51的上图中的m-ZrO2峰)可以通过在该层的溅射沉积过程中对该层使用非常高的氧气流量,并使用金属溅射靶(例如,金属Zr或SiZr靶)(例如,参见图55)来实现。应注意,在这种情况的某些示例性实施方案中所期望的这种高氧气流量对于基于氧化锆的层是违反直觉的,并且通常是不期望的,因为它们降低沉积速率并因此在制造涂覆制品中产生了增加的时间和费用。已经发现,HT时层2和/或2”从单斜晶相(参见图51的上图中的m-ZrO2峰)到四方晶或立方晶结构(参见图51中的c-ZrO2)的显著的部分或完全相变以及相应的密度变化倾向于补偿所述HT时银基层7、57和/或19的晶体结构的变化,这似乎导致涂覆制品在HT时具有改善的热稳定性(较低的ΔE*值)和/或降低的可见光透射率(Tvis或TY)变化。在图51中,注意单斜晶相(参见图51的上图中的m-ZrO2峰)如何存在于上图中(沉积期间的高氧气流量,和金属Zr靶),但不存在于下图中(沉积期间的低氧气流量,和陶瓷ZrOx靶)。并且,也在图51的上图中,可以看出单斜晶相(参见m-ZrO2峰)在HT之前如何较高,在HT之后如何较低。已经令人惊讶地发现,最初溅射沉积具有或包含氧化锆、氮氧化锆、氧化硅锆和/或氮氧化硅锆(例如SiZrOx、ZrO2、SiO2和/或SiZrOxNy)的电介质层2和/或2”以包含单斜晶相晶体结构是有利的,因为其导致由于HT至少约0.25g/cm3、更优选地至少约0.30g/cm3并且最优选地至少约0.35g/cm3(例如约5.7g/cm3至约6.1g/cm3)的高的层2和/或2”密度变化,这又补偿由于所述HT银基层7、19和/或57的晶体结构的变化,从而导致涂覆制品在热处理(HT)时具有改善的热稳定性(较低的ΔE*值)和/或减少的可见光透射率(例如Tvis或TY)变化。在某些示例性实施方案中,这使得涂覆制品由于HT导致的可见光透射率(Tvis或TY)不超过1.2%、更优选地不超过1.0%并且最优选地不超过0.5%的减小的变化,和/或降低的ΔE*值。In certain exemplary embodiments, it has been surprisingly and unexpectedly discovered that the initial sputter deposition has or comprises zirconium oxide, zirconium oxynitride, zirconium silicon oxide, and/or zirconium silicon oxynitride (eg, SiZrO x , ZrO 2 , SiO 2 and/or SiZrO x N y ) dielectric layers 2 and/or 2 ″ to contain a monoclinic phase crystal structure are advantageous as it leads to improved thermal stability of the coated article upon thermal treatment (HT) (lower ΔE* values) and/or reduced visible light transmittance (eg, T vis or TY). See, for example, Figures 1(a)-1(i), Figures 51-53, and Figure 55. In a certain In some example embodiments, the dielectric layers 2 and/or 2" may also include other materials such as Ti and/or Nb. In certain exemplary embodiments, the monoclinic phase of the dielectric layer (eg, ZrO 2 ) 2 and/or 2 ″ (eg, see m-ZrO peak in the upper panel of FIG. 51 ) may pass through the layer The sputter deposition process for this layer uses very high oxygen flow rates for this layer, and uses a metal sputter target (eg, a metal Zr or SiZr target) (see, eg, Figure 55). It should be noted that in certain Such high oxygen flow rates, which are desired in some exemplary embodiments, are counterintuitive for zirconia-based layers and are generally undesirable because they reduce deposition rates and thus create increased time in the manufacture of coated articles. and cost. It has been found that upon HT, layers 2 and/or 2 " go from a monoclinic phase (see the m-ZrO peak in the upper panel of Figure 51) to a tetragonal or cubic structure (see c-ZrO2 in Figure 51). The significant partial or complete phase transition and corresponding density change of ZrO 2 ) tend to compensate for the change in the crystal structure of the silver base layers 7, 57 and/or 19 upon HT, which appears to result in coated articles with improved HT upon HT Thermal stability (lower ΔE* values) and/or reduced visible light transmittance (T vis or TY ) changes. In Figure 51, note how the monoclinic phase (see m - ZrO peak in the top panel of Figure 51) is present in the top panel (high oxygen flow during deposition, and metallic Zr target), but not in the bottom panel Pictured (low oxygen flow during deposition, and ceramic ZrO x target). And, also in the top panel of Figure 51, it can be seen how the monoclinic phase (see m - ZrO2 peak) is higher before HT and lower after HT. Surprisingly, it has been found that initial sputter deposition of zirconium oxide, zirconium oxynitride, silicon zirconium oxide and/or silicon zirconium oxynitride (eg SiZrO x , ZrO 2 , SiO 2 and/or SiZrO x N y ) It is advantageous for the dielectric layers 2 and/or 2" to contain a monoclinic phase crystal structure as it results in at least about 0.25 g/cm 3 , more preferably at least about 0.30 g/cm 3 and most preferably at least about 0.35 g/cm 3 due to HT The high layer 2 and/or 2" density variation in g/cm 3 (eg, about 5.7 g/cm 3 to about 6.1 g/cm 3 ), which in turn compensates for the Changes in crystal structure resulting in improved thermal stability (lower ΔE* values) and/or reduced changes in visible light transmittance (eg Tvis or TY) of the coated article upon heat treatment (HT). In certain exemplary embodiments, this results in no more than 1.2%, more preferably no more than 1.0%, and most preferably no more than 0.5% reduction in visible light transmittance (T vis or TY) of the coated article due to HT changes, and/or decreased ΔE* values.

还令人惊讶地发现,增加具有或包含氧化硅、氧化锆、氧氮化锆、氧化硅锆和/或氮氧化硅锆(例如SiZrOx、ZrO2、SiO2和/或SiZrOxNy)的电介质层2和/或2”的厚度倾向于导致在HT时薄层电阻(Rs)和可见光透射率的较小变化,并因此导致涂覆制品的较低ΔE*值。在某些示例性实施方案中,具有或包含氧化硅、氧化锆、氧氮化锆、氧化硅锆和/或氮氧化硅锆(例如SiZrOx、ZrO2、SiO2和/或SiZrOxNy)的电介质层2和/或2”的中的一者或两者可各自具有约

Figure BDA0003538370550000201
更优选地约
Figure BDA0003538370550000202
并且最优选地约
Figure BDA0003538370550000203
的物理厚度。It has also surprisingly been found that the increase has or comprises silicon oxide, zirconium oxide, zirconium oxynitride, silicon zirconium oxide and/or silicon zirconium oxynitride (eg SiZrO x , ZrO 2 , SiO 2 and/or SiZrO x N y ) The thickness of the dielectric layers 2 and/or 2" tends to result in smaller changes in sheet resistance (Rs) and visible light transmittance at HT, and thus lower ΔE* values for the coated articles. In certain exemplary In embodiments, a dielectric layer 2 having or comprising silicon oxide, zirconium oxide, zirconium oxynitride, silicon zirconium oxide, and/or silicon zirconium oxynitride (eg, SiZrOx , ZrO2 , SiO2 , and/or SiZrOxNy ) and/or one or both of 2" may each have approximately
Figure BDA0003538370550000201
More preferably about
Figure BDA0003538370550000202
and most preferably about
Figure BDA0003538370550000203
physical thickness.

还令人惊讶和出乎意料地发现,在玻璃基底1与最下层银基层7之间,不设置在最下层掺杂的氧化锌基层3正下方并与之接触的氮化硅基层(例如,Si3N4,任选地掺杂1%-10%Al等),与沉积态结晶相或基本上结晶相的掺杂的氧化锌基层3组合,允许实现热处理时改善的热稳定性(降低ΔE*值)。例如,参见图1(a)-1(d)和图1(i)的涂层。此外,在某些示例性实施方案中,不存在位于玻璃基底1与包含银的第一IR反射层7之间的无定形或基本上无定形的层。还令人惊讶和出乎意料地发现,在两个银基IR反射层7与19之间的叠堆的中间区段中不提供氮化硅基层允许实现热处理时的改善的热稳定性(较低的ΔE*值)(例如,参见图1(a)-1(i))。It was also surprisingly and unexpectedly found that between the glass substrate 1 and the lowermost silver base layer 7, no silicon nitride base layer (for example, a silicon nitride base layer (eg, Si 3 N 4 , optionally doped with 1%-10% Al, etc.), in combination with the doped zinc oxide base layer 3 of the as-deposited crystalline phase or substantially crystalline phase, allows to achieve improved thermal stability during heat treatment (reduced ΔE* value). See, for example, the coatings of Figures 1(a)-1(d) and Figure 1(i). Furthermore, in certain exemplary embodiments, there is no amorphous or substantially amorphous layer located between the glass substrate 1 and the first IR reflective layer 7 comprising silver. It was also surprisingly and unexpectedly found that not providing a silicon nitride based layer in the middle section of the stack between the two silver based IR reflective layers 7 and 19 allows for improved thermal stability upon thermal treatment (compared to low ΔE* values) (see, eg, Figures 1(a)-1(i)).

在某些示例性实施方案中,还发现在玻璃基底与具有或包含氧化硅、氧化锆、氧化硅锆和/或氮氧化硅锆(例如,SiZrOx、ZrO2、SiO2和/或SiZrOxNy)的电介质层2之间设置吸收层(例如,NiCr、NiCrNx、NbZr和/或NbZrNx)42可有利地以期望的方式减少涂覆制品的玻璃侧可见光反射(RgY),并且允许以期望的方式调节可见光透射率。例如,在某些示例性实施方案中,诸如图1(d)和图1(f)所示,吸收层42可设置在一对氮化硅基层41和43(例如,具有或包含Si3N4(任选地掺杂有1%-10%Al等并且任选地包含0%-10%氧)的一对氮化硅基层)之间并与之接触。还可参见例如图39和实施例22。在其他示例性实施方案中,由氮化物基电介质层41和43之间的吸收层42构成的叠堆可位于叠堆内的其他位置处。In certain exemplary embodiments, it has also been found in glass substrates with or containing silicon oxide, zirconium oxide, silicon zirconium oxide, and/or silicon zirconium oxynitride (eg, SiZrO x , ZrO 2 , SiO 2 , and/or SiZrO x ) Disposing an absorber layer (eg, NiCr, NiCrNx , NbZr and/or NbZrNx ) 42 between the dielectric layers 2 of Ny) can advantageously reduce the glass-side visible light reflection ( RgY ) of the coated article in a desired manner, And allows the visible light transmittance to be adjusted in a desired manner. For example, in certain exemplary embodiments, such as shown in FIGS. 1(d) and 1(f), absorber layer 42 may be disposed on a pair of silicon nitride based layers 41 and 43 (eg, having or comprising Si3N ) 4 (optionally doped with 1%-10% Al etc. and optionally containing 0%-10% oxygen) between and in contact with a pair of silicon nitride based layers. See also, eg, FIG. 39 and Example 22. In other exemplary embodiments, the stack of absorber layer 42 between nitride-based dielectric layers 41 and 43 may be located elsewhere within the stack.

在单片测量的某些示例性实施方案中,鉴于上述结构(例如,参见图1(a)-1(i)),涂覆制品被构造成实现以下中的一者或多者:(i)在约650℃的温度下HT 8分钟、12分钟和/或16分钟时的透射ΔE*值(在测量透射光学器件的情况下)不大于3.0(更优选地不大于2.8或2.5,并且最优选地不大于2.3),(ii)在约650℃的温度下HT 8分钟、12分钟和/或16分钟时的玻璃侧反射ΔE*值(在测量玻璃侧反射光学器件的情况下)不大于3.0(更优选地不大于2.5,更优选地不大于2.0,更优选地不大于1.5,并且最优选地不大于1.0或0.6),和/或(iii)在约650℃的温度下HT8分钟、12分钟和/或16分钟时的膜侧反射ΔE*值(在测量膜侧反射光学器件的情况下)不大于3.5(更优选地不大于3.0,更优选地不大于2.0,更优选地不大于1.5,并且最优选地不大于1.2)。In certain exemplary embodiments of monolithic measurements, in view of the structures described above (eg, see Figures 1(a)-1(i)), the coated article is configured to achieve one or more of the following: (i ) transmission ΔE* values (in the case of measuring transmission optics) at a temperature of about 650°C for 8 minutes, 12 minutes and/or 16 minutes HT of not greater than 3.0 (more preferably not greater than 2.8 or 2.5, and most Preferably not greater than 2.3), (ii) glass side reflection ΔE* values (in the case of measuring glass side reflection optics) at a temperature of about 650°C for 8 minutes, 12 minutes and/or 16 minutes of HT are not greater than 3.0 (more preferably not greater than 2.5, more preferably not greater than 2.0, more preferably not greater than 1.5, and most preferably not greater than 1.0 or 0.6), and/or (iii) HT at a temperature of about 650°C for 8 minutes, Film side reflection ΔE* values at 12 minutes and/or 16 minutes (in the case of measuring film side reflection optics) not greater than 3.5 (more preferably not greater than 3.0, more preferably not greater than 2.0, more preferably not greater than 1.5, and most preferably no more than 1.2).

在单片测量的某些示例性实施方案中,涂覆制品被构造成在任何任选的HT之前或之后具有至少约30%、更优选地至少约35%、更优选地至少约40%、更优选地至少约50%的可见光透射率(Tvis或Y)。在某些示例性实施方案中,在任选的热处理之前和/或之后,低E涂层具有不大于20欧姆/平方、更优选地不大于10欧姆/平方、并且最优选地不大于2.5欧姆/平方或2.2欧姆/平方的薄层电阻(SR或Rs)。在某些示例性实施方案中,低E涂层具有不大于0.08、更优选低不大于0.05、并且最优选地不大于0.04的半球比辐射率/发射率(Eh)。In certain exemplary embodiments measured monolithically, the coated article is constructed to have at least about 30%, more preferably at least about 35%, more preferably at least about 40%, before or after any optional HT, More preferably at least about 50% visible light transmittance (T vis or Y). In certain exemplary embodiments, before and/or after the optional thermal treatment, the low E coating has no greater than 20 ohms/square, more preferably no greater than 10 ohms/square, and most preferably no greater than 2.5 ohms /square or sheet resistance (SR or Rs ) of 2.2 ohms/square. In certain exemplary embodiments, the low E coating has a hemispheric specific emissivity/emissivity (E h ) of no greater than 0.08, more preferably no greater than 0.05, and most preferably no greater than 0.04.

在本发明的上下文中,ΔE*值对于确定在热处理(HT)时是否具有匹配性或基本上匹配性方面是重要的。本文的颜色通过参考常规的a*、b*值来描述,这两个值在本发明的某些实施方案中均为负的,以便提供趋于蓝绿色象限的期望的基本上中性的颜色范围内的颜色。出于示例的目的,术语Δa*仅指示由于热处理导致的色值a*变化的程度。In the context of the present invention, the ΔE* value is important in determining whether the heat treatment (HT) is matched or substantially matched. Colors herein are described by reference to conventional a*, b* values, both of which are negative in certain embodiments of the invention, in order to provide the desired substantially neutral color toward the blue-green quadrant range of colors. For the purpose of example, the term Δa* only indicates the degree of change in color value a* due to heat treatment.

在ASTM 2244-93中以及在Hunter等人的The Measurement of Appearance,2ndEd.Cptr.9,page 162 et seq.[John Wiley&Sons,1987](外观的测量,第2版,第9章,第162页及以下,约翰威利出版社,1987年)中报道的,术语ΔE*(和ΔE)连同用于确定其的各种技术在本领域中是众所周知的并且被报道。如本领域所用,ΔE*(和ΔE)是充分表达在热处理之后或由于热处理而引起的制品中反射率和/或透射率(以及因此颜色外观)的改变(或其缺乏)的方式。ΔE可通过“ab”技术或通过Hunter技术(通过使用下标“H”表示)来计算。ΔE对应于Hunter Lab L、a、b标度(或Lh、ah、bh)。类似地,ΔE*对应于CIE LAB标度L*、a*、b*。两者都被认为是有用的,并且对于本发明的目的是等同的。例如,如上文引用的Hunter等人报道的那样,可以使用被称为L*、a*、b*标度的直角坐标/标度技术(CIE LAB 1976),其中:In ASTM 2244-93 and in Hunter et al., The Measurement of Appearance, 2 nd Ed. Cptr. 9, page 162 et seq. [John Wiley & Sons, 1987] (Measurement of Appearance, 2nd Edition, Chapter 9, p. 162 and below, John Wiley Press, 1987), the term ΔE* (and ΔE), along with various techniques for determining it, are well known and reported in the art. As used in the art, ΔE* (and ΔE) is a way to adequately express the change (or lack thereof) in reflectance and/or transmittance (and thus color appearance) in an article after or due to heat treatment. ΔE can be calculated by the "ab" technique or by the Hunter technique (denoted by the use of the subscript "H"). ΔE corresponds to the Hunter Lab L, a, b scale (or L h , a h , b h ). Similarly, ΔE* corresponds to the CIE LAB scale L*, a*, b*. Both are considered useful and equivalent for the purposes of the present invention. For example, as reported by Hunter et al. cited above, a Cartesian coordinate/scale technique known as L*, a*, b* scaling (CIE LAB 1976) can be used, where:

L*是(CIE 1976)亮度单位L* is the (CIE 1976) unit of luminance

a*是(CIE 1976)红绿单位a* is the (CIE 1976) red-green unit

b*是(CIE 1976)黄蓝单位b* is (CIE 1976) yellow-blue unit

并且L*o a*o b*o与L*l a*l b*l之间的距离ΔE*为:And the distance ΔE* between L* o a* o b* o and L* l a* l b* l is:

ΔE*=[(ΔL*)2+(Δa*)2+(Δb*)2]1/2 (1)ΔE*=[(ΔL*) 2 +(Δa*) 2 +(Δb*) 2 ] 1/2 (1)

其中:in:

ΔL*=L*l-L*o (2)ΔL*=L* l -L* o (2)

Δa*=a*l-a*o (3)Δa*=a* l -a* o (3)

Δb*=b*l-b*o (4)Δb*=b* l -b* o (4)

其中下标“o”表示热处理之前的涂覆制品,并且下标“l”表示热处理之后的涂覆制品;并且所采用的数字(例如,a*、b*、L*)是通过上述(CIE LAB 1976)L*、a*、b*坐标技术计算的数字。以类似的方式,可使用公式(1)通过用Hunter Lab值ah、bh、Lh替换a*、b*、L*来计算ΔE。同样在本发明的范围内,并且如果转换为通过采用与上文定义的ΔE*相同概念的任何其他技术计算的数字,则ΔE*的量化是等效数字。where the subscript "o" refers to the coated article before heat treatment, and the subscript "l" refers to the coated article after heat treatment; LAB 1976) Numbers calculated by L*, a*, b* coordinate techniques. In a similar manner, ΔE can be calculated using equation (1) by replacing a*, b*, L* with the Hunter Lab values a h , b h , L h . Also within the scope of the present invention, and if converted to a number calculated by any other technique employing the same concept of ΔE* as defined above, the quantification of ΔE* is an equivalent number.

在本发明的某些示例性实施方案中,低E涂层30包括两个银基IR反射层(例如,参见图1(a)-1(i)),但是本发明并非在所有情况下都如此限定(例如,在某些情况下可以使用三个银基IR反射层)。应当认识到,图1(a)-图1(i)的涂覆制品以单片形式示出。然而,这些涂覆制品也可用于例如IG窗单元中。In certain exemplary embodiments of the present invention, the low-E coating 30 includes two silver-based IR reflective layers (eg, see Figures 1(a)-1(i)), although the present invention is not in all cases So defined (eg, three silver-based IR reflective layers may be used in some cases). It should be appreciated that the coated articles of Figures 1(a)-1(i) are shown in monolithic form. However, these coated articles can also be used, for example, in IG window units.

由于材料的稳定性,在高温(例如580-650℃)下烘烤会引起电介质层材料的化学组成、结晶度和微观结构或甚至相的变化。高温也会引起界面扩散或甚至反应,结果是在界面位置处的组成、粗糙度和折射率变化。因此,光学性能诸如折射率n/k和光学厚度在热处理时改变。IR材料(例如Ag)也已发生变化。通常,Ag材料在热处理时经历结晶、晶粒生长或甚至取向变化。这些变化通常引起传导性变化,特别是折射率n/k变化,这对低E涂层的光学和热性能具有很大影响。此外,电介质和电介质的变化也对经历热处理的IR反射层诸如银具有显著影响。此外,仅由于材料和层叠堆本身,银在一个层叠堆中可具有比在其他层叠堆中更多的变化。如果银的变化超过了一定限度,则在热处理后,其在美学上可能是不可接受的。我们已发现,为了获得低E涂层的热稳定性,可在IR反射层的银下方使用在玻璃上的直接或间接地具有薄改性层的掺杂的氧化锌结晶材料。已发现,这些位置中的结晶或基本上结晶的掺杂的氧化锌在热处理期间变化较小,并且导致银在性能诸如折射率(例如n和/或k)方面的较小变化以及因此热处理时总体颜色的较小变化。Baking at high temperatures (eg, 580-650° C.) can cause changes in the chemical composition, crystallinity, and microstructure or even phase of the dielectric layer material due to the stability of the material. High temperatures can also cause interfacial diffusion or even reactions, resulting in changes in composition, roughness and refractive index at the interface location. Therefore, optical properties such as refractive index n/k and optical thickness change upon heat treatment. IR materials such as Ag have also changed. Typically, Ag materials undergo crystallization, grain growth, or even orientation changes upon thermal treatment. These changes often cause changes in conductivity, especially in refractive index n/k, which have a large impact on the optical and thermal properties of low-E coatings. In addition, dielectric and dielectric changes also have significant effects on IR reflective layers such as silver that undergo thermal treatment. Furthermore, silver can have more variation in one layer stack than in other layer stacks simply because of the material and the layer stack itself. If the silver changes beyond a certain limit, it may not be aesthetically acceptable after heat treatment. We have found that in order to obtain the thermal stability of the low E coating, a doped zinc oxide crystalline material with a thin modified layer directly or indirectly on the glass can be used under the silver of the IR reflective layer. It has been found that crystalline or substantially crystalline doped zinc oxide in these positions changes less during heat treatment and results in less change in properties of silver such as refractive index (eg n and/or k) and thus upon heat treatment Minor changes in overall color.

图1(a)为根据本发明的示例性非限制性实施方案的涂覆制品的侧剖视图,其中该低E涂层30具有两个银基IR反射层7和19。该涂覆制品包括基底1(例如,约1.0mm至10.0mm厚、更优选地约3.0mm至8.0mm厚的透明、绿色、青铜色或蓝绿色玻璃基底),以及直接或间接设置在基底1上的低E涂层(或层体系)30。在图1(a)中,涂层(或层体系)30包括例如:具有或包含掺杂有至少一种金属掺杂物(例如,Sn和/或Al)的氧化锌的电介质层3,所述电介质层为沉积态的结晶或基本上结晶的层;位于层3上方并与之直接接触的具有或包含银的红外(IR)反射层7;在IR反射层7上方并与之直接接触的具有或包含Ni和/或Cr(例如,NiCr、NiCrOx、NiCrNx、NiCrON、NiCrM、NiCrMoOx等)、Ti或其他合适的材料的接触层9;具有或包含锡酸锌(例如,ZnSnO、Zn2SnO4、或其他合适的化学计量)或其他合适材料的电介质层11,所述电介质层可为沉积态的无定形或基本上无定形的层;具有或包含掺杂有至少一种掺杂物(例如,Sn)的氧化锌的另一电介质层13,所述电介质层为沉积态的结晶或基本上结晶的层;位于层13上方并与之直接接触的具有或包含银的另一红外(IR)反射层19;在IR反射层19上方并与之直接接触的具有或包含Ni和/或Cr(例如,NiCr、NiCrOx、NiCrNx、NiCrON、NiCrM、NiCrMoOx等)、Ti或其他合适的材料的另一个接触层21;具有或包含锡酸锌(例如,ZnSnO、Zn2SnO4、或其他合适的化学计量)或其他合适的材料诸如氧化锡的另一电介质层23,所述电介质层可为沉积态的无定形或基本上无定形的层;以及具有或包含氮化硅(例如,Si3N4或其他合适的化学计量)的无定形或基本上无定形的电介质层25,所述氮化硅可任选地掺杂有Al和/或O。图1(a)所示的层可通过溅射沉积或以任何其他合适的方式沉积。FIG. 1( a ) is a side cross-sectional view of a coated article according to an exemplary non-limiting embodiment of the present invention, wherein the low E coating 30 has two silver-based IR reflective layers 7 and 19 . The coated article includes a substrate 1 (eg, a transparent, green, bronze or blue-green glass substrate about 1.0 mm to 10.0 mm thick, more preferably about 3.0 mm to 8.0 mm thick), and is disposed directly or indirectly on the substrate 1 A low-E coating (or layer system) 30 on. In Figure 1(a), a coating (or layer system) 30 includes, for example, a dielectric layer 3 having or comprising zinc oxide doped with at least one metal dopant (eg, Sn and/or Al), so The dielectric layer is a crystalline or substantially crystalline layer in the as-deposited state; an infrared (IR) reflective layer 7 with or containing silver located above and in direct contact with layer 3; above and in direct contact with the IR reflective layer 7 Contact layer 9 having or comprising Ni and/or Cr (eg, NiCr, NiCrO x , NiCrN x , NiCrON, NiCrM, NiCrMoO x etc.), Ti or other suitable material; having or comprising zinc stannate (eg ZnSnO, Dielectric layer 11 of Zn2SnO4 , or other suitable stoichiometry) or other suitable material, which may be amorphous or substantially amorphous as deposited; having or comprising doping with at least one dopant Another dielectric layer 13 of zinc oxide of impurities (eg, Sn), the dielectric layer being a crystalline or substantially crystalline layer in the as-deposited state; another layer 13 having or containing silver located above and in direct contact with layer 13 Infrared (IR) reflective layer 19; having or comprising Ni and/or Cr (eg, NiCr, NiCrO x , NiCrN x , NiCrON, NiCrM, NiCrMoO x , etc.), Ti or Another contact layer 21 of other suitable material ; another dielectric layer 23 having or containing zinc stannate (eg, ZnSnO, Zn2SnO4 , or other suitable stoichiometry) or other suitable material such as tin oxide, so The dielectric layer may be an as-deposited amorphous or substantially amorphous layer; and an amorphous or substantially amorphous dielectric layer having or comprising silicon nitride (eg, Si3N4 or other suitable stoichiometry) 25. The silicon nitride may be optionally doped with Al and/or O. The layers shown in Figure 1(a) may be deposited by sputtering or in any other suitable manner.

如本文所解释的,已发现,在低E涂层30中的具有或包含银的红外(IR)反射层7和/或19正下方并与之直接接触的具有或包含掺杂有至少一种掺杂物(例如,Sn)的氧化锌的沉积态的结晶或基本上结晶的层3和/或13的存在具有显著改善涂层的热稳定性(即,降低ΔE*值)的效应。在某些示例性实施方案中,具有或包含氧化锌的结晶或基本上结晶的层3和/或13掺杂有约1%-30%Sn、更优选地约1%-20%Sn、更优选地约5%-15%Sn,其中一个示例为约10%Sn(以重量%计)。As explained herein, it has been found that the infrared (IR) reflective layers 7 and/or 19 in the low-E coating 30 directly below and in direct contact with or containing silver have or contain a dopant doped with at least one The presence of as-deposited crystalline or substantially crystalline layers 3 and/or 13 of zinc oxide of dopant (eg, Sn) has the effect of significantly improving the thermal stability of the coating (ie reducing the ΔE* value). In certain exemplary embodiments, crystalline or substantially crystalline layers 3 and/or 13 having or comprising zinc oxide are doped with about 1%-30% Sn, more preferably about 1%-20% Sn, more Preferably about 5%-15% Sn, with about 10% Sn (by weight %) being an example.

在某些示例性实施方案中,电介质锡酸锌(例如,ZnSnO4、Zn2SnO4等)基层11和23可以无定形或基本上无定形状态沉积(它/它们在热处理时可变成结晶或基本上结晶的)。已发现,层中具有类似量的Zn和Sn,或层中具有比Zn更多的Sn,有助于确保层以无定形或基本上无定形状态沉积。例如,在本发明的某些示例性实施方案中,无定形锡酸锌基层11和23的金属含量可包括约30%-70%Zn和约30%-70%Sn,更优选地约40%-60%Zn和约40%-60%Sn,其中示例为约52%Zn和约48%Sn,或约50%Zn和50%Sn(除了层中的氧之外的重量%)。因此,例如,在本发明的某些示例性实施方案中,可使用包含约52%Zn和约48%Sn、或约50%Zn和约50%Sn的金属靶溅射沉积无定形或基本上无定形的锡酸锌基层11和/或23。任选地,锡酸锌基层11和23可掺杂有其他金属,诸如Al等。已发现,在以无定形或基本上无定形状态沉积层11和23的同时以结晶或基本上结晶状态沉积层3和13,有利地允许结合良好的光学特性(诸如可接受的透射、颜色和反射)来实现改善的热稳定性。应注意,锡酸锌层11和/或23可由其他材料的相应层代替,诸如氧化锡、氧化锌、掺杂有1%-20%Sn的氧化锌(如本文别处关于层11、13所论述)等。In certain exemplary embodiments, dielectric zinc stannate (eg, ZnSnO 4 , Zn 2 SnO 4 , etc.) base layers 11 and 23 may be deposited in an amorphous or substantially amorphous state (which/they may become crystalline upon thermal treatment or substantially crystalline). It has been found that having similar amounts of Zn and Sn in the layer, or having more Sn in the layer than Zn, helps to ensure that the layer is deposited in an amorphous or substantially amorphous state. For example, in certain exemplary embodiments of the present invention, the metal content of the amorphous zinc stannate-based layers 11 and 23 may include about 30%-70% Zn and about 30%-70% Sn, more preferably about 40%- 60% Zn and about 40-60% Sn, with examples being about 52% Zn and about 48% Sn, or about 50% Zn and 50% Sn (wt % excluding oxygen in the layer). Thus, for example, in certain exemplary embodiments of the present invention, amorphous or substantially amorphous can be sputter deposited using a metal target comprising about 52% Zn and about 48% Sn, or about 50% Zn and about 50% Sn Zinc stannate base layer 11 and/or 23. Optionally, the zinc stannate base layers 11 and 23 may be doped with other metals, such as Al or the like. It has been found that depositing layers 3 and 13 in a crystalline or substantially crystalline state while depositing layers 11 and 23 in an amorphous or substantially amorphous state advantageously allows for the incorporation of good optical properties such as acceptable transmission, color and reflection) to achieve improved thermal stability. It should be noted that zinc stannate layers 11 and/or 23 may be replaced by corresponding layers of other materials, such as tin oxide, zinc oxide, zinc oxide doped with 1%-20% Sn (as discussed elsewhere herein for layers 11, 13 )Wait.

在本发明的某些实施方案中,可为外涂层的电介质层25可为具有或包含氮化硅(例如,Si3N4或其他合适的化学计量)的电介质层,以便改善涂覆制品的可热处理性和/或耐久性。在某些示例性实施方案中,氮化硅可任选地掺杂有Al和/或O,并且在某些示例性实施方案中也可用其他材料诸如氧化硅或氧化锆替换。In certain embodiments of the present invention, the dielectric layer 25, which may be an overcoat, may be a dielectric layer having or comprising silicon nitride (eg, Si3N4 or other suitable stoichiometry) in order to improve coated articles heat treatability and/or durability. In certain exemplary embodiments, the silicon nitride may be optionally doped with Al and/or O, and may also be replaced in certain exemplary embodiments with other materials such as silicon oxide or zirconium oxide.

红外(IR)反射层7和19优选地基本上或完全是金属和/或导电的,并且可包含银(Ag)、金或任何其他合适的IR反射材料或基本上由其组成。IR反射层7和19有助于允许涂层具有低E和/或良好的阳光控制特性。然而,在本发明的某些实施方案中,IR反射层可略微氧化。Infrared (IR) reflective layers 7 and 19 are preferably substantially or completely metallic and/or conductive, and may comprise or consist essentially of silver (Ag), gold or any other suitable IR reflective material. IR reflective layers 7 and 19 help to allow coatings with low E and/or good solar control properties. However, in certain embodiments of the present invention, the IR reflective layer may be slightly oxidized.

还可在图1所示涂层下方或上方设置其他层。因此,当层系统或涂层“在基底1上”或“由基底1支撑”(直接或间接)时,一个或多个其他层可设置在其间。因此,例如,即使在层3和基底1之间设置一个或多个其他层,图1(a)的涂层也可以被认为是“在基底1上”和“由该基底支撑”。此外,在某些实施方案中可移除所示涂层的某些层,而在本发明的其他实施方案中,可以在各个层之间添加其他层,或者各个层可与在分离段之间添加的其他层分开而不脱离本发明某些实施方案的整体实质。Other layers may also be provided below or above the coating shown in Figure 1 . Thus, when a layer system or coating is "on" or "supported by" the substrate 1 (directly or indirectly), one or more other layers may be disposed therebetween. Thus, for example, the coating of Figure 1(a) can be considered "on substrate 1" and "supported by" even if one or more other layers are disposed between layer 3 and substrate 1 . Furthermore, in certain embodiments certain layers of the coatings shown may be removed, while in other embodiments of the present invention other layers may be added between layers, or layers may be associated with separation sections Additional layers are added separately without departing from the overall essence of certain embodiments of the invention.

虽然在本发明的不同实施方案中可在层中使用各种厚度和材料,但是图1(a)实施方案中的玻璃基底1上的相应层的示例性厚度和材料如下,从玻璃基底向外:While various thicknesses and materials may be used in the layers in different embodiments of the invention, exemplary thicknesses and materials for the corresponding layers on the glass substrate 1 in the embodiment of Figure 1(a) are as follows, from the glass substrate outward :

表1示例性材料/厚度;图1(a)实施方案Table 1 Exemplary Materials/Thicknesses; Figure 1(a) Embodiment

Figure BDA0003538370550000251
Figure BDA0003538370550000251

图1(b)实施方案与以上和本文其他地方讨论的图1(a)实施方案相同,不同的是图1(b)实施方案中的低E涂层30还包括在掺杂的氧化锌基层3下方并与之直接接触的具有或包含氧化硅锆、氧化硅和/或氮氧化硅锆(例如SiZrOx、ZrO2、SiO2、SiAlO2和/或SiZrOxNy)的基本上透明的电介质层2。已发现,该附加层2提供涂覆制品的进一步改善的热稳定性,并且因此甚至在热处理(HT)诸如热回火时提供更低的ΔE*值(例如,更低的玻璃侧反射ΔE*值)。在本发明的某些示例性实施方案中,具有或包含氧化硅锆、氧化锆、氧化硅和/或氮氧化硅锆(例如,SiZrOx、ZrO2、SiO2、SiAlO2和/或SiZrOxNy)的电介质层2可设置在最下层掺杂的氧化锌基层3正下方并与之接触,如图1(b)所示。在本发明的某些示例性实施方案中,具有或包含氧化硅锆、氧化锆、氧化硅和/或氮氧化硅锆(例如,SiZrOx、ZrO2、SiO2、SiAlO2和/或SiZrOxNy)的电介质层2可为约

Figure BDA0003538370550000261
厚、更优选地约
Figure BDA0003538370550000262
厚并且最优选地约
Figure BDA0003538370550000263
厚。以上针对图1(a)实施方案的厚度也可适用于图1(b)-1(i)。The Fig. 1(b) embodiment is the same as the Fig. 1(a) embodiment discussed above and elsewhere herein, except that the low-E coating 30 in the Fig. 1(b) embodiment also includes a doped zinc oxide based layer 3 Substantially transparent material having or comprising silicon zirconium oxide, silicon oxide and/or silicon zirconium oxynitride (eg SiZrO x , ZrO 2 , SiO 2 , SiAlO 2 and/or SiZrO x N y ) below and in direct contact therewith Dielectric layer 2. It has been found that this additional layer 2 provides further improved thermal stability of the coated article, and thus lower ΔE* values (eg, lower glass side reflection ΔE*) even upon thermal treatment (HT) such as thermal tempering value). In certain exemplary embodiments of the invention, there is or comprises zirconium silica, zirconia, silicon oxide, and/or zirconium oxynitride (eg, SiZrOx , ZrO2, SiO2 , SiAlO2 , and/or SiZrOx ) . A dielectric layer 2 of N y ) may be disposed directly below and in contact with the bottommost doped zinc oxide base layer 3 , as shown in FIG. 1( b ). In certain exemplary embodiments of the invention, there is or comprises zirconium silica, zirconia, silicon oxide, and/or zirconium oxynitride (eg, SiZrOx , ZrO2, SiO2 , SiAlO2 , and/or SiZrOx ) . The dielectric layer 2 of N y ) may be about
Figure BDA0003538370550000261
thick, more preferably about
Figure BDA0003538370550000262
thick and most preferably about
Figure BDA0003538370550000263
thick. The thicknesses above for the embodiment of Figure 1(a) may also apply to Figures 1(b)-1(i).

当层2(或2’、或2”)具有或包含SiZrOx和/或SiZrOxNy时,已发现,从光学观点来看,在该层中提供比Zr多的Si有利地具有低的折射率(n)和改善的抗反射和其他光学特性。例如,在某些示例性实施方案中,当层2(或2’、或2”)具有或包含SiZrOx和/或SiZrOxNy时,该层的金属含量可包含51%-99%的Si、更优选地70%-97%的Si并且最优选地80%-90%的Si,以及1%-49%的Zr、更优选地3%-30%的Zr、并且最优选地10%-20%的Zr(原子%)。在示例性实施方案中,具有或包含SiZrOx和/或SiZrOxNy的透明电介质层2可具有在550nm下测量的约1.48至1.68、更优选地约1.50至1.65、并且最优选地约1.50至1.62的折射率(n)。When layer 2 (or 2', or 2") has or comprises SiZrOx and/or SiZrOxNy , it has been found that from an optical point of view, providing more Si than Zr in this layer advantageously has a low Refractive index (n) and improved antireflection and other optical properties. For example, in certain exemplary embodiments, when layer 2 ( or 2', or 2") has or comprises SiZrOx and/or SiZrOxNy , the metal content of the layer may comprise 51%-99% Si, more preferably 70%-97% Si and most preferably 80%-90% Si, and 1%-49% Zr, more preferably 3%-30% Zr, and most preferably 10%-20% Zr (atomic %). In an exemplary embodiment, the transparent dielectric layer 2 having or comprising SiZrOx and/or SiZrOxNy may have a measurement at 550 nm of about 1.48 to 1.68, more preferably about 1.50 to 1.65, and most preferably about 1.50 Refractive index (n) to 1.62.

图1(c)实施方案与以上和本文其他地方讨论的图1(b)实施方案相同,不同的是图1(c)实施方案中的低E涂层30还包括位于玻璃基底1与电介质层2之间并与之接触的具有或包含氮化硅(例如,Si3N4,任选地掺杂1%-10%的Al等并且任选地包含0%-10%的氧,或其他合适的化学计量)和/或氮氧化硅锆的基本上透明的电介质层2'。层2'也可具有或包含氮化铝(例如,AlN)。The Fig. 1(c) embodiment is the same as the Fig. 1(b) embodiment discussed above and elsewhere herein, except that the low-E coating 30 in the Fig. 1(c) embodiment also includes a dielectric layer between the glass substrate 1 and the dielectric layer. 2 with or in contact with silicon nitride (eg, Si3N4, optionally doped with 1 %-10% Al, etc. and optionally containing 0%-10% oxygen, or other suitable stoichiometry) and/or a substantially transparent dielectric layer 2' of silicon zirconium oxynitride. Layer 2' may also have or contain aluminum nitride (eg, AlN).

图1(d)实施方案与以上和本文其他地方讨论的图1(b)实施方案相同,不同的是图1(d)实施方案中的低E涂层30还包括夹置在氮化硅基层41和43(例如,Si3N4,任选地掺杂1%-10%的Al等,并且任选地包含0%-10%的氧)之间并与之接触的金属的或基本上金属的吸收层42。在某些示例性实施方案中,电介质层41和/或43也可以具有或包含氮化铝(例如,AlN)。在本发明的示例性实施方案中,吸收层42可具有或包含NiCr、NbZr、Nb、Zr或它们的氮化物或其他合适的材料。吸收层42优选地含有0%-10%的氧(原子%),更优选地0%-5%的氧。在某些示例性实施方案中,已发现在玻璃基底与具有或包含氧化硅锆、氧化锆、氧化硅和/或氮氧化硅锆(例如,SiZrOx、ZrO2、SiO2、SiAlO2和/或SiZrOxNy)电介质层2之间设置吸收层(例如,NiCr、NiCrNx、NbZr和/或NbZrNx)42有利地以期望的方式减少涂覆制品的玻璃侧可见光反射(RgY),并且允许以期望的方式调节可见光透射率。参见例如图39和实施例22。在某些示例性实施方案中,吸收层42可为约

Figure BDA0003538370550000271
厚,更优选地约
Figure BDA0003538370550000272
厚。在某些示例性实施方案中,氮化硅基层41和43可为约
Figure BDA0003538370550000273
厚,更优选地约
Figure BDA0003538370550000274
厚。例如,在实施例22和图39中,吸收层42为NiCr的氮化物,并且为约1.48nm厚。在其他示例性实施方案中,由氮化物基电介质层41和43之间的吸收层42构成的叠堆可位于叠堆内的其他位置处。The FIG. 1(d) embodiment is the same as the FIG. 1(b) embodiment discussed above and elsewhere herein, except that the low-E coating 30 in the FIG. 1(d) embodiment also includes an interposed silicon nitride based layer. Metallic or substantially in contact between 41 and 43 (eg, Si3N4, optionally doped with 1 %-10% Al, etc., and optionally containing 0%-10% oxygen) Absorber layer 42 of metal. In certain exemplary embodiments, dielectric layers 41 and/or 43 may also have or include aluminum nitride (eg, AlN). In exemplary embodiments of the present invention, absorber layer 42 may have or include NiCr, NbZr, Nb, Zr or their nitrides or other suitable materials. The absorber layer 42 preferably contains 0% to 10% oxygen (atomic %), more preferably 0% to 5% oxygen. In certain exemplary embodiments, it has been found that glass substrates have or contain zirconium silica, zirconia, silica, and/or zirconium oxynitride (eg, SiZrOx , ZrO2, SiO2 , SiAlO2 , and/or zirconium oxynitride ) . or SiZrO x N y ) between the dielectric layers 2, an absorber layer (eg, NiCr, NiCrN x , NbZr and/or NbZrN x ) 42 advantageously reduces the glass-side visible light reflection (R g Y ) of the coated article in a desired manner , and allows the visible light transmittance to be tuned in a desired manner. See, eg, Figure 39 and Example 22. In certain exemplary embodiments, the absorber layer 42 may be about
Figure BDA0003538370550000271
thick, more preferably about
Figure BDA0003538370550000272
thick. In certain exemplary embodiments, silicon nitride based layers 41 and 43 may be about
Figure BDA0003538370550000273
thick, more preferably about
Figure BDA0003538370550000274
thick. For example, in Example 22 and Figure 39, the absorber layer 42 is a nitride of NiCr and is about 1.48 nm thick. In other exemplary embodiments, the stack of absorber layer 42 between nitride-based dielectric layers 41 and 43 may be located elsewhere within the stack.

参见图1(a)-1(d),可在层11和13之间设置具有或包含ZrO2、SiZrOx和/或SiZrOxNy的另一透明电介质层(未示出)。在某些示例性实施方案中,含锡酸锌层11可被省略,或者可用此类具有或包含ZrO2、SiZrOx和/或SiZrOxNy的另一透明电介质层替换。掺杂的氧化锌层13也可与此类具有或包含ZrO2、SiZrOx和/或SiZrOxNy的另一个层透明电介质层分开。例如,在某些示例性实施方案中,当此类附加层为具有或包含SiZrOx和/或SiZrOxNy的附加层时,该层的金属含量可包含51%-99%Si、更优选地70%-97%Si、并且最优选地80%-90%Si,以及1%-49%Zr、更优选地3%-30%Zr、并且最优选地10%-20%Zr(原子%),并且可包含0%-20%的氮、更优选地0%-10%的氮并且最优选地0%-5%的氮(原子%)。例如,可设置具有或包含氧化硅、氧化锆、氮氧化锆、氧化硅锆和/或氮氧化硅锆(例如,SiZrOx、ZrO2、SiO2和/或SiZrOxNy)的至少一个电介质层(例如,2和/或2”):(i)在所有基于银的IR反射层下方的涂层的底部电介质部分中(例如,参见图1(b)-1(i)),和/或(ii)在介于一对基于银的IR反射层之间的涂层的中间电介质部分中(例如,参见图1(e)-1(i))。Referring to Figures 1(a)-1(d), another transparent dielectric layer (not shown ) having or comprising ZrO2 , SiZrOx and/or SiZrOxNy may be disposed between layers 11 and 13. In certain exemplary embodiments, the zinc stannate -containing layer 11 may be omitted, or may be replaced with such another transparent dielectric layer having or comprising ZrO2 , SiZrOx , and/or SiZrOxNy . The doped zinc oxide layer 13 may also be separated from such another layer transparent dielectric layer having or containing ZrO2 , SiZrOx and/or SiZrOxNy . For example, in certain exemplary embodiments, when such an additional layer is an additional layer having or comprising SiZrOx and/or SiZrOxNy , the metal content of the layer may comprise 51% -99 % Si, more preferably 70%-97% Si, and most preferably 80%-90% Si, and 1%-49% Zr, more preferably 3%-30% Zr, and most preferably 10%-20% Zr (atomic % ), and may contain 0%-20% nitrogen, more preferably 0%-10% nitrogen and most preferably 0%-5% nitrogen (atomic %). For example, at least one dielectric may be provided with or comprising silicon oxide, zirconium oxide, zirconium oxynitride, silicon zirconium oxide, and/or silicon zirconium oxynitride (eg, SiZrOx , ZrO2 , SiO2 , and/or SiZrOxNy ) Layers (eg, 2 and/or 2"): (i) in the bottom dielectric portion of the coating below all silver-based IR reflective layers (eg, see Figures 1(b)-1(i)), and/ or (ii) in the intermediate dielectric portion of the coating between a pair of silver-based IR reflective layers (eg, see Figures 1(e)-1(i)).

如上文所解释和附图中所示,涂覆制品可包括如图1(b)-(i)所示的电介质层2、2”(例如ZrO2或SiZrOx),其可位于包含掺杂有约1%-30%Sn的氧化锌的第一结晶或基本上结晶的层3下方并与之直接接触,和或含氧化锌层3”之下。电介质层2(和2”)可具有或包含任选地掺杂有Al的氧化硅、氧化锆(例如,ZrO2)、氮氧化锆、氧化硅锆和/或氮氧化硅锆(例如,SiZrOx、ZrO2、SiO2、和/或SiZrOxNy)。电介质层2(或2”)可以与玻璃基底1直接接触(例如,参见图1(b)、图1(e)、图1(g)、图1(h))。电介质层2、2”可以各自具有约

Figure BDA0003538370550000281
更优选地约
Figure BDA0003538370550000282
Figure BDA0003538370550000283
更优选地约
Figure BDA0003538370550000284
并且最优选地约
Figure BDA0003538370550000285
或约
Figure BDA0003538370550000286
Figure BDA0003538370550000287
Figure BDA0003538370550000288
的物理厚度。电介质层2、2”优选地为氧化物基电介质层,并且优选地含有极少的氮或不含氮。例如,电介质层2、2”可各自包含0%-20%的氮、更优选地0%-10%的氮、并且最优选地0%-5%的氮(原子%)。As explained above and shown in the drawings, the coated article may include a dielectric layer 2, 2 " (eg, ZrO2 or SiZrOx) as shown in Figures 1(b)-( i ), which may be located in There is about 1%-30% Sn under and in direct contact with the first crystalline or substantially crystalline layer 3 of zinc oxide, and or under the zinc oxide-containing layer 3". Dielectric layer 2 (and 2 ") may have or include silicon oxide, zirconium oxide (eg, ZrO2), zirconium oxynitride, silicon zirconium oxide, and/or silicon zirconium oxynitride (eg, SiZrO) optionally doped with Al x , ZrO 2 , SiO 2 , and/or SiZrO x N y ). The dielectric layer 2 (or 2 ″) may be in direct contact with the glass substrate 1 (eg, see FIG. 1( b ), FIG. 1( e ), FIG. 1 (g), Figure 1 (h)). The dielectric layers 2, 2" may each have approximately
Figure BDA0003538370550000281
More preferably about
Figure BDA0003538370550000282
Figure BDA0003538370550000283
More preferably about
Figure BDA0003538370550000284
and most preferably about
Figure BDA0003538370550000285
or about
Figure BDA0003538370550000286
Figure BDA0003538370550000287
or
Figure BDA0003538370550000288
physical thickness. The dielectric layers 2, 2" are preferably oxide-based dielectric layers, and preferably contain little or no nitrogen. For example, the dielectric layers 2, 2" may each contain 0%-20% nitrogen, more preferably 0%-10% nitrogen, and most preferably 0%-5% nitrogen (atomic %).

图1(i)的实施方案基于本文讨论的图1(a)-(b)、图1(e)和图1(h)的实施方案,并且关于这些实施方案的层和性能描述也适用于图1(i)。然而,图1(i)的实施方案还包括由层57和59构成的吸收膜,其中吸收膜设置在层叠堆的中心部分中并且在如本文所述的电介质层11、2”和3”上。层3”可以是锡酸锌、氧化锌、氧化锌铝或掺杂氧化锌,如在本发明的不同实施方案中所讨论的。层2”如上所述,并且可以具有或包含任选地掺杂有Al的氧化硅、氧化锆(例如ZrO2)、氧化硅锆和/或氮氧化硅锆(例如,SiZrOx、ZrO2、SiO2和/或SiZrOxNy)。The embodiment of Figure 1(i) is based on the embodiments of Figures 1(a)-(b), Figures 1(e) and 1(h) discussed herein, and the layer and performance descriptions for these embodiments also apply to Figure 1(i). However, the embodiment of Figure 1(i) also includes an absorber film comprised of layers 57 and 59, wherein the absorber film is disposed in the central portion of the layer stack and on dielectric layers 11, 2" and 3" as described herein . Layer 3" may be zinc stannate, zinc oxide, zinc aluminum oxide, or doped zinc oxide, as discussed in various embodiments of the present invention. Layer 2" is as described above, and may have or contain optionally doped zinc oxide. Al-doped silicon oxide, zirconium oxide (eg ZrO 2 ), silicon zirconium oxide and/or silicon zirconium oxynitride (eg SiZrO x , ZrO 2 , SiO 2 and/or SiZrO x N y ).

在图1(i)的实施方案中,吸收膜可以是多层吸收膜,其包括具有或包含银(Ag)的第一层57,以及具有或包含可部分或完全氧化(NiCrOx)且可能轻微氮化的NiCr的第二层59。因此,在某些示例性实施方案中,这种多层吸收膜57、59可以由Ag/NiCrOx的层序列构成。在某些示例性实例中可以重复该层序列。例如,在本发明的某些示例性实施方案中,吸收膜可由Ag/NiCrOx/Ag/NiCrOx或Ag/NiCrOx/Ag/NiCrOx/Ag/NiCrOx的层序列构成,所述序列中的各层有助于光吸收。由于HT或其他因素,来自一层的元素可以扩散到相邻层中。在某些示例实施方案中,吸收体的NiCr基层59可以最初以金属形式或作为低氧化物沉积。在某些示例性实施方案中,银基层57可以是连续层,和/或可以任选地被掺杂。本发明的示例性实施方案的实施例30-47涉及至少图1(i)的实施方案(参见图47-56)。此外,如本文所解释的,在某些示例性实施方案中,已经令人惊讶地和出乎意料地发现,最初溅射沉积具有或包含氧化硅、氧化锆、氮氧化锆、氧化硅锆和/或氮氧化硅锆(例如SiZrOx、ZrO2、SiO2和/或SiZrOxNy)的电介质层2和/或2”以包含单斜晶相(参见图51的上图中的m-ZrO2峰)是有利的,因为其导致涂覆制品在热处理(HT)时具有改善的热稳定性(较低的ΔE*值)和/或减少的可见光透射率(例如Tvis或TY)变化。In the embodiment of Figure 1(i), the absorber film may be a multilayer absorber film comprising a first layer 57 having or comprising silver (Ag), and having or comprising a partially or fully oxidizable (NiCrO x ) and possibly Second layer 59 of slightly nitrided NiCr. Thus, in certain exemplary embodiments, such multilayer absorber films 57, 59 may be composed of a layer sequence of Ag/ NiCrOx . This sequence of layers may be repeated in some illustrative examples. For example, in certain exemplary embodiments of the invention, the absorber film may be composed of a layer sequence of Ag/ NiCrOx /Ag/ NiCrOx or Ag/ NiCrOx /Ag/ NiCrOx /Ag/ NiCrOx in which The layers contribute to light absorption. Elements from one layer can diffuse into adjacent layers due to HT or other factors. In certain example embodiments, the NiCr base layer 59 of the absorber may be deposited initially in metallic form or as a suboxide. In certain exemplary embodiments, the silver-based layer 57 may be a continuous layer, and/or may be optionally doped. Examples 30-47 of exemplary embodiments of the present invention relate to at least the embodiment of Figure 1(i) (see Figures 47-56). Furthermore, as explained herein, in certain exemplary embodiments, it has been surprisingly and unexpectedly discovered that the initial sputter deposition has or comprises silicon oxide, zirconium oxide, zirconium oxynitride, silicon oxide zirconium, and Dielectric layer 2 and/or 2" of silicon zirconium oxynitride (eg SiZrOx , ZrO2 , SiO2 and/or SiZrOxNy ) to contain the monoclinic phase (see m- ZrO peak ) is advantageous as it results in coated articles with improved thermal stability (lower ΔE* values) and/or reduced visible transmittance (eg T vis or TY ) changes upon heat treatment (HT) .

吸收膜的银基层57优选地足够薄,使得其主要功能是吸收可见光并提供期望的着色(与厚得多并主要用作IR反射层相反)。NiCr或NiCrOx 59设置在吸收膜的银57上方并与之接触,以便保护银,并且还有助于吸收。在某些示例性实施方案中,吸收膜的银基层57在本发明的某些示例性实施方案中可以不大于约

Figure BDA0003538370550000291
厚,更优选地不大于约
Figure BDA0003538370550000292
厚,并且最优选地不大于约
Figure BDA0003538370550000293
厚,并且可能不大于约
Figure BDA0003538370550000294
厚。在某些示例性实施方案中,吸收膜的NiCr基层59可为约
Figure BDA0003538370550000295
厚,更优选地约
Figure BDA0003538370550000296
厚,并且最优选地约
Figure BDA0003538370550000297
厚。在某些示例性实施方案中,吸收膜中的Ag/NiCrOx比可以为1:Z(其中0.1<Z<20,更优选地其中2<Z<15,最优选地其中3<Z<12),例如为约1:5。The silver base layer 57 of the absorbing film is preferably thin enough that its primary function is to absorb visible light and provide the desired coloration (as opposed to being much thicker and functioning primarily as an IR reflective layer). NiCr or NiCrO x 59 is placed over and in contact with the silver 57 of the absorber film in order to protect the silver and also to aid in absorption. In certain exemplary embodiments, the silver-based layer 57 of the absorber film may, in certain exemplary embodiments of the present invention, be no greater than about
Figure BDA0003538370550000291
thick, more preferably no greater than about
Figure BDA0003538370550000292
thick, and most preferably no greater than about
Figure BDA0003538370550000293
thick, and may not be greater than approx.
Figure BDA0003538370550000294
thick. In certain exemplary embodiments, the NiCr based layer 59 of the absorber film may be about
Figure BDA0003538370550000295
thick, more preferably about
Figure BDA0003538370550000296
thick, and most preferably about
Figure BDA0003538370550000297
thick. In certain exemplary embodiments, the Ag/NiCrO x ratio in the absorber film may be 1:Z (where 0.1 < Z < 20, more preferably where 2 < Z < 15, and most preferably where 3 < Z < 12 ), for example about 1:5.

关于吸收膜的银基层57足够薄,使得其主要功能是吸收可见光并提供期望的着色(与厚得多并主要用作IR反射层相反),IR反射层7(例如银)的物理厚度与银基层57的物理厚度的比率优选地为至少5:1,更优选地为至少约8:1,甚至更优选地为至少约10:1,并且甚至更优选地为至少约15:1。同样,IR反射层19(例如银)的物理厚度与银基层57的物理厚度的比率优选地为至少5:1,更优选地为至少约8:1,甚至更优选地为至少约10:1,并且甚至更优选地为至少约15:1。For the silver base layer 57 of the absorbing film to be thin enough that its primary function is to absorb visible light and provide the desired coloration (as opposed to being much thicker and primarily functioning as an IR reflective layer), the IR reflective layer 7 (eg silver) is physically thicker than silver The ratio of physical thicknesses of base layer 57 is preferably at least 5:1, more preferably at least about 8:1, even more preferably at least about 10:1, and even more preferably at least about 15:1. Likewise, the ratio of the physical thickness of the IR reflective layer 19 (eg, silver) to the physical thickness of the silver base layer 57 is preferably at least 5:1, more preferably at least about 8:1, even more preferably at least about 10:1 , and even more preferably at least about 15:1.

虽然在本发明的某些示例性实施方案中,单层NiCr(或其他合适的材料)也可用作低E涂层中的吸收膜(例如,参见图1(d)和1(f)中的吸收膜42),但是已令人惊讶地发现,与作为吸收体的单层NiCr相比,在图1(i)的吸收膜(单层或多层吸收膜)中使用银57提供了几个意想不到的优点。首先,已经发现,作为吸收体的单层NiCr倾向于在某些低E涂层涂覆制品中引起微黄色着色,这在某些情况下可能是不希望的。相反,已经令人惊讶地发现,在吸收膜中使用银57倾向于避免这种微黄色着色和/或反而提供所得涂覆制品的更期望的中性着色。因此,已经发现在吸收膜中使用银57提供改进的光学特性。第二,使用单层NiCr 42作为吸收体往往还涉及在NiCr的两侧上提供氮化硅基层,以便将NiCr直接夹在其间并与其接触。例如,参见图1(d)和图1(f)。已经发现,在涂层叠堆中的某些位置提供氮化硅可能导致HT时的热稳定性受损。相反,已经令人惊讶地发现,当在吸收膜中使用银时,例如如图1(i)所示,不需要一对直接相邻的氮化硅层,从而可以改善HT时的热稳定性。因此,已经发现在吸收膜中使用银57提供改善的热稳定性,包括较低的ΔE*值,并因此提供改善的相同涂层的HT与非HT形式之间的匹配性。在吸收膜中使用银还可以在某些情况下提供改善的可制造性。Although in certain exemplary embodiments of the present invention, a single layer of NiCr (or other suitable material) may also be used as an absorber film in a low-E coating (eg, see Figures 1(d) and 1(f) absorber film 42), but it has surprisingly been found that the use of silver 57 in the absorber film (single or multilayer absorber film) of Figure 1(i) provides several advantages compared to single layer NiCr as absorber an unexpected advantage. First, it has been found that a single layer of NiCr as an absorber tends to cause a yellowish tint in certain low E coating coated articles, which may be undesirable in certain circumstances. In contrast, it has been surprisingly found that the use of silver 57 in the absorbent film tends to avoid this yellowish coloration and/or instead provides a more desirable neutral coloration of the resulting coated article. Accordingly, the use of silver 57 in the absorber film has been found to provide improved optical properties. Second, using a single layer of NiCr 42 as the absorber often also involves providing a silicon nitride base layer on both sides of the NiCr so that the NiCr is directly sandwiched between and in contact with it. See, for example, Figures 1(d) and 1(f). It has been found that providing silicon nitride at certain locations in the coating stack may result in compromised thermal stability during HT. Conversely, it has been surprisingly found that when silver is used in the absorber film, as shown for example in Fig. 1(i), a pair of immediately adjacent silicon nitride layers is not required, leading to improved thermal stability during HT . Accordingly, the use of silver 57 in the absorber film has been found to provide improved thermal stability, including lower ΔE* values, and thus improved matching between HT and non-HT versions of the same coating. The use of silver in absorber films can also provide improved manufacturability in some cases.

虽然图1(i)中的吸收膜57、59设置在IR反射层7与19之间的层叠堆的中心部分中,但也可以提供这样的吸收膜57、59:其在底部IR反射层7下方的层叠堆的下部中,或在另一合适的位置中。例如,图1(i)的实施方案可以通过将直接相邻和接触的层57和59移动到层2与3之间的位置来修改,使得层2和57彼此接触,并且层59和3彼此接触。又如,图1(i)的实施方案可以通过将三个层3”/57/59的序列从叠层的中心部分移动到图1(i)中的层2与3之间的位置来修改,使得层2和3”彼此接触,并且层59和3彼此接触。然而,已经令人惊讶地发现,通过在如图1(i)所示的层叠堆的中心部分中提供吸收膜57、59,可以改善诸如SHGC和玻璃侧反射率的光学特性。Although the absorbing films 57, 59 in Fig. 1(i) are provided in the central part of the layer stack between the IR reflective layers 7 and 19, it is also possible to provide absorbing films 57, 59 which are in the bottom IR reflective layer 7 in the lower portion of the underlying layer stack, or in another suitable location. For example, the embodiment of Figure 1(i) can be modified by moving directly adjacent and contacting layers 57 and 59 to a position between layers 2 and 3 such that layers 2 and 57 are in contact with each other and layers 59 and 3 are in contact with each other touch. As another example, the embodiment of Figure 1(i) can be modified by moving the sequence of three layers 3"/57/59 from the central portion of the stack to a position between layers 2 and 3 in Figure 1(i) , so that layers 2 and 3" are in contact with each other, and layers 59 and 3 are in contact with each other. However, it has surprisingly been found that by providing absorber films 57, 59 in the central portion of the layer stack as shown in Figure 1(i), optical properties such as SHGC and glass side reflectivity can be improved.

图1(i)示出具有或包含NiCrOx(部分或完全氧化的)的吸收膜的层59。然而,吸收膜的层59可以具有或包含其他金属基材料(例如NiCr、Ni、Cr、NiCrOx、NiCrNx、NiCrON、NiCrM、NiCrMoOx、Ti或其他合适的材料)。Figure 1(i) shows a layer 59 with or comprising an absorber film of NiCrOx (partially or fully oxidized). However, layer 59 of the absorber film may have or contain other metal-based materials (eg, NiCr, Ni, Cr, NiCrOx , NiCrNx , NiCrON, NiCrM, NiCrMoOx , Ti, or other suitable materials).

应注意,在本文的任何实施方案中,锡酸锌层11和/或23可由其他材料的相应层代替,诸如氧化锡、氧化锌、掺杂有1%-20%Sn的氧化锌(如本文别处关于层3、3”、13所论述)等。It should be noted that in any of the embodiments herein, the zinc stannate layers 11 and/or 23 may be replaced by corresponding layers of other materials, such as tin oxide, zinc oxide, zinc oxide doped with 1%-20% Sn (as herein discussed elsewhere with respect to layers 3, 3", 13), etc.

虽然在本发明的不同实施方案中可在层中使用各种厚度和材料,但是图1(i)实施方案中的玻璃基底1上的相应层的示例性厚度和材料如下,从玻璃基底向外:While various thicknesses and materials may be used in the layers in different embodiments of the present invention, exemplary thicknesses and materials for the corresponding layers on the glass substrate 1 in the embodiment of Figure 1(i) are as follows, from the glass substrate outward :

表1'示例性材料/厚度;图1(i)的实施方案Table 1' Exemplary Materials/Thickness; Embodiment of Figure 1(i)

Figure BDA0003538370550000301
Figure BDA0003538370550000301

Figure BDA0003538370550000311
Figure BDA0003538370550000311

在本发明的某些实施方案中,当从涂覆制品的玻璃侧观察时,设置在透明单片玻璃基底(例如,用于参考目的的6mm厚玻璃基底)上的本文的层体系(例如,参见图1(a)-(i))在热处理之前具有如下颜色(RG%)(Ill.C,2度观察器):In certain embodiments of the present invention, a layer system herein (eg, See Figure 1(a)-(i)) with the following colors (RG%) before heat treatment ( Ill.C , 2 degree viewer):

表2:热处理之前和/或之后的反射/颜色(RG)Table 2: Reflection/Color (R G ) before and/or after heat treatment

Figure BDA0003538370550000312
Figure BDA0003538370550000312

比较例1和2Comparative Examples 1 and 2

图19为第一比较例(CE)涂覆制品的剖视图,并且图23为XRD Lin(cps)相对于2-θ标度图,其示出了对于第一比较例(CE),由于热处理所致的Ag(111)峰高的相对较大的166%变化。19 is a cross-sectional view of a first comparative example (CE) coated article, and FIG. 23 is an XRD Lin (cps) versus 2-theta scale showing that for the first comparative example (CE), the A relatively large 166% change in Ag(111) peak height was observed.

第一比较例涂层(参见图19)与下文实施例1-24、27-28和30-33之间的区别在于第一比较例中的涂层的最下层电介质叠堆由Zn2SnO4层和掺杂有铝的氧化锌基层构成。锡酸锌层(Zn2SnO4为锡酸锌的形式)的金属含量为约50%Zn和约50%Sn(重量%);并且因此锡酸锌层以无定形形式溅射沉积。第一CE中最下层电介质叠堆的总体厚度约为400埃-500埃,锡酸锌层占该厚度的大部分。图23示出了对于第一比较例(CE),由于在约650℃下热处理所致的Ag(111)峰高的相对较大的166%变化,这指示了热处理期间银层结构的显著变化,并且这与由该比较例所实现的超过4.0的ΔE*值一致。因此,由于Ag(111)峰的显著变化,以及由于热处理导致的超过4.0的高ΔE*值,第一CE是不期望的。与第一比较例相比,以下实施例1-24、27-28和30-33具有在银7、19正下方并与之接触的金属含量为90(Zn)/10(Sn)或85(Zn)/15(Sn)的结晶或基本上结晶的层3、13,并且实现了显著改善/降低的ΔE*值。The difference between the first comparative example coating (see Figure 19) and Examples 1-24, 27-28 and 30-33 below is that the lowermost dielectric stack of the coating in the first comparative example consists of Zn2SnO4 . layer and a zinc oxide base layer doped with aluminum. The metal content of the zinc stannate layer ( Zn2SnO4 in the form of zinc stannate) is about 50% Zn and about 50% Sn (wt %); and thus the zinc stannate layer is sputter deposited in amorphous form. The overall thickness of the lowermost dielectric stack in the first CE is about 400-500 angstroms, with the zinc stannate layer accounting for the majority of this thickness. Figure 23 shows the relatively large 166% change in Ag(111) peak height due to heat treatment at about 650°C for the first comparative example (CE), which indicates a significant change in silver layer structure during heat treatment , and this is consistent with the ΔE* value over 4.0 achieved by this comparative example. Therefore, the first CE is undesirable due to the significant change in the Ag(111) peak, and the high ΔE* value over 4.0 due to thermal treatment. Compared to the first comparative example, the following examples 1-24, 27-28 and 30-33 have metal contents directly below and in contact with silver 7, 19 of 90(Zn)/10(Sn) or 85( Zn)/15(Sn) crystalline or substantially crystalline layers 3, 13 and achieve significantly improved/reduced ΔE* values.

第二比较例(CE 2)示于图34-图35中。图34为示出在6mm厚玻璃基底上溅射沉积比较例2(CE 2)的低E涂层的溅射沉积条件的图表。CE 2的层叠堆与本申请的图1(b)所示中的层叠堆相同,不同的是CE 2中的最下层电介质层由氮化硅(掺杂有约8%的铝)而不是图1(b)中所示的SiZrOx制成。因此,CE 2中的底部电介质叠堆仅由该氮化硅基层和掺杂有约10%Sn的氧化锌层3构成。CE 2涂层的厚度在图34的最右列。例如,掺杂有Al(在Ar和N2气体气氛中从SiAl靶溅射)的底部氮化硅基层在CE 2中为10.5nm厚,在底部银正下方的掺杂有约10%Sn的氧化锌层3在CE 2中为32.6nm厚,等。The second comparative example (CE 2) is shown in Figures 34-35. 34 is a graph showing sputter deposition conditions for sputter deposition of the low E coating of Comparative Example 2 (CE 2) on a 6 mm thick glass substrate. The layer stack of CE 2 is the same as that shown in Figure 1(b) of this application, except that the lowermost dielectric layer in CE 2 is made of silicon nitride (doped with about 8% aluminum) instead of Figure 1(b). of SiZrO x shown in 1(b). Therefore, the bottom dielectric stack in CE 2 consists only of this silicon nitride based layer and the zinc oxide layer 3 doped with about 10% Sn. The thickness of the CE 2 coating is in the far right column of Figure 34. For example, the bottom silicon nitride base layer doped with Al (sputtered from a SiAl target in an Ar and N2 gas atmosphere) is 10.5 nm thick in CE 2, and the bottom layer is doped with about 10% Sn just below the silver Zinc oxide layer 3 is 32.6 nm thick in CE 2, etc.

从图35中可以看出,由于12分钟、16分钟和24分钟的热处理,CE 2具有超过4.0的相对高的玻璃侧反射ΔE*值(ΔE*Rg)和膜侧反射ΔE*值(ΔE*Rf)。例如,图35示出CE具有由于热处理12分钟所致的4.9的相对高的玻璃侧反射ΔE*值(ΔE*Rg)和5.5的相对高的膜侧反射ΔE*值(ΔE*Rf)。图35为示出比较例2(CE 2)的光学特性的图表:最左边数据列中在热处理之前涂覆态(退火)、在650℃下热处理12分钟之后(HT)、在650℃下HT 16分钟之后(HTX)和最右边数据列中在650℃下热处理24分钟之后(HTXXX)。CE2的这些相对高的ΔE*值是不期望的。As can be seen in Figure 35, CE 2 has relatively high glass side reflection ΔE* values (ΔE*R g ) and film side reflection ΔE* values (ΔE over 4.0 due to the 12 minute, 16 minute and 24 minute heat treatment) *R f ). For example, Figure 35 shows that CE has a relatively high glass side reflection ΔE* value (ΔE*R g ) of 4.9 and a relatively high film side reflection ΔE* value (ΔE*R f ) of 5.5 due to heat treatment for 12 minutes . Figure 35 is a graph showing the optical properties of Comparative Example 2 (CE 2): as coated (annealed) before heat treatment, after heat treatment at 650°C for 12 minutes (HT), HT at 650°C in the leftmost data column After 16 minutes (HTX) and in the far right data column after heat treatment at 650°C for 24 minutes (HTXXX). These relatively high ΔE* values for CE2 are undesirable.

因此,图34-图35中的比较例2(CE 2)表明,即使在底部银层7正下方设置掺杂有约10%Sn的结晶或基本上结晶的氧化锌层3的情况下,当层3与玻璃基底1之间的唯一层为氮化硅基层时,也实现了不期望的高ΔE*值。CE2涂层与以下实施例1-24、27-28和30-33之间的区别在于,以下实施例1-24、27-28和30-33通过不具有位于掺杂有约10%或15%Sn的结晶或基本上结晶的氧化锌层3正下方并与之接触的氮化硅基层,使用掺杂有约10%或15%Sn的结晶或基本上结晶的氧化锌层3能够令人惊讶和出乎意料地实现大大改善的(降低的)ΔE*值。Therefore, Comparative Example 2 (CE 2) in FIGS. 34-35 shows that even in the case where the crystalline or substantially crystalline zinc oxide layer 3 doped with about 10% Sn is provided directly under the bottom silver layer 7, when Undesirably high ΔE* values are also achieved when the only layer between layer 3 and glass substrate 1 is a silicon nitride based layer. The difference between the CE2 coating and the following Examples 1-24, 27-28 and 30-33 is that the following Examples 1-24, 27-28 and 30-33 were doped with about 10% or 15% by not having The silicon nitride base layer directly below and in contact with the crystalline or substantially crystalline zinc oxide layer 3 of % Sn, using a crystalline or substantially crystalline zinc oxide layer 3 doped with about 10% or 15% Sn can make the Surprisingly and unexpectedly, greatly improved (reduced) ΔE* values were achieved.

以下实施例11-14、19-21和26-33还表明,用SiZrOx或ZrO2层2代替CE2的底部氮化硅基层以出乎意料的方式显著改善/降低了ΔE*值。Examples 11-14, 19-21 and 26-33 below also show that replacing the bottom silicon nitride based layer of CE2 with SiZrOx or ZrO2 layer 2 significantly improves/decreases the ΔE* value in an unexpected manner.

实施例1-48Examples 1-48

令人惊讶和出乎意料地发现,当图19中比较例(CE)的最下层电介质叠堆5、6(主要由沉积态无定形的锡酸锌层构成)用接触银基层的类似厚度的结晶或基本上结晶的掺杂Sn的氧化锌层3替换时(叠堆的其余部分保持基本上相同),在结晶或基本上结晶的层3正下方没有氮化硅基层并与之接触的情况下,结果是热稳定性高得多的产物,其具有显著更低的ΔE*值和由于在约650℃下热处理所致的小得多的Ag(111)峰高的变化。实施例1-24、27-28和30-48中的结晶或基本上结晶的掺杂Sn的氧化锌层3的金属含量为约90%Zn和10%Sn(重量%)(还可参见,85%Zn和15%Sn,相对于实施例19中的层13的“85”),这有助于允许实施例1-24、27-28、30-48中的掺杂Sn的氧化锌层3、13以结晶或基本上结晶的形式(与CE中的无定形形式相对)溅射沉积。例如,图20示出了实施例10的层叠堆,图21示出了实施例10的溅射沉积条件和层厚度,并且图22示出了实施例10的由于在约650℃下热处理所致的Ag(111)峰高的小得多的66%变化,这与实施例1-24、27-28和30-33所实现的低得多的ΔE*值一致。图16还示出了对于实施例8,在热处理时相对较小的折射率(n)偏移。It was surprisingly and unexpectedly found that when the lowermost dielectric stacks 5, 6 of Comparative Example (CE) in FIG. The crystalline or substantially crystalline Sn-doped zinc oxide layer 3 is replaced (the rest of the stack remains substantially the same) without the silicon nitride base layer directly below and in contact with the crystalline or substantially crystalline layer 3 The result is a much more thermally stable product with significantly lower ΔE* values and a much smaller change in Ag(111) peak height due to heat treatment at about 650°C. The crystalline or substantially crystalline Sn-doped zinc oxide layer 3 of Examples 1-24, 27-28 and 30-48 had a metal content of about 90% Zn and 10% Sn (wt %) (see also, 85% Zn and 15% Sn, relative to "85" of layer 13 in Example 19), which helps to allow Sn doped zinc oxide layers in Examples 1-24, 27-28, 30-48 3, 13 Sputter deposition in crystalline or substantially crystalline form (as opposed to amorphous form in CE). For example, FIG. 20 shows the layer stack of Example 10, FIG. 21 shows the sputter deposition conditions and layer thicknesses of Example 10, and FIG. 22 shows the result of heat treatment at about 650°C for Example 10. The much smaller 66% change in the Ag(111) peak height of , which is consistent with the much lower ΔE* values achieved for Examples 1-24, 27-28 and 30-33. Figure 16 also shows that for Example 8, the relatively small shift in refractive index (n) upon heat treatment.

根据本发明的某些示例性实施方案制备实施例的涂覆制品(各自经退火和热处理),即实施例1-48。所示的示例性涂层30经由溅射条件(例如,气流、电压和功率)、溅射靶溅射沉积,并且沉积至图2、图3、图6、图7、图9、图11、图13、图15、图21、图24-图26、图28、图30、图32和图36-图57中所示的层厚度(nm)。例如,图2示出了用于实施例1的涂层的溅射条件、溅射沉积用溅射靶和层厚度,图3示出了用于实施例2的涂层的溅射条件、溅射沉积用溅射靶和层厚度,图6示出了用于实施例3的涂层的溅射条件、溅射沉积用溅射靶和层厚度,图7示出了用于实施例4的涂层的溅射条件、溅射沉积用溅射靶和层厚度,等。同时,所示实施例的包括可见光透射率(TY或Tvis)、玻璃侧可见光反射率(RgY或RGY)、膜侧可见光反射率(RfY或RFY)、a*和b*色值、L*值和薄层电阻(SR或Rs)的数据示于图4、图5、图8、图10、图12、图14、图18、图27、图29、图31、图33和图36-图56中。如上所述,对于给定实施例,使用在热处理之前和之后获取的L*、a*和b*值来计算ΔE*值。例如,对于给定实施例,使用在热处理之前和之后获取的玻璃侧反射L*、a*和b*值来计算玻璃侧反射ΔE*值(ΔE*G或ΔE*Rg)。又如,对于给定实施例,使用在热处理之前和之后获取的玻璃侧反射L*、a*和b*值来计算膜侧反射ΔE*值(ΔE*F或ΔE*Rf)。又如,对于给定实施例,使用在热处理之前和之后获取的玻璃侧反射L*、a*和b*值来计算透射ΔE*值(ΔE*T)。The coated articles of the Examples (each annealed and heat treated), Examples 1-48, were prepared in accordance with certain exemplary embodiments of the present invention. The exemplary coating 30 shown is sputter deposited via sputter conditions (eg, gas flow, voltage, and power), sputter target, and deposited to Figures 2, 3, 6, 7, 9, 11, Layer thicknesses (nm) shown in Figures 13, 15, 21, 24-26, 28, 30, 32 and 36-57. For example, FIG. 2 shows sputtering conditions, sputtering targets and layer thicknesses for the coating of Example 1, and FIG. 3 shows sputtering conditions, sputtering, and layer thicknesses for the coating of Example 2. Sputtering targets and layer thicknesses for sputter deposition, Figure 6 shows sputtering conditions, sputtering targets and layer thicknesses for the coatings used in Example 3, Figure 7 shows sputtering targets and layer thicknesses for Example 4 Sputtering conditions for coatings, sputtering targets and layer thicknesses for sputter deposition, etc. Also, the examples shown include visible light transmittance (TY or T vis ), glass side visible light reflectance (R g Y or RGY), film side visible light reflectivity (R f Y or RFY), a* and b* colors values, L* values and sheet resistance (SR or R s ) data are shown in Figure 4, Figure 5, Figure 8, Figure 10, Figure 12, Figure 14, Figure 18, Figure 27, Figure 29, Figure 31, Figure 4 33 and Figures 36-56. As described above, for a given example, the ΔE* values were calculated using the L*, a* and b* values obtained before and after heat treatment. For example, for a given embodiment, glass side reflection ΔE* values (ΔE* G or ΔE*R g ) are calculated using glass side reflection L*, a* and b* values obtained before and after heat treatment. As another example, the film side reflection ΔE* values (ΔE* F or ΔE*R f ) are calculated using the glass side reflection L*, a* and b* values obtained before and after heat treatment for a given example. As another example, for a given embodiment, the transmission ΔE* value (ΔE* T ) is calculated using the glass side reflection L*, a* and b* values obtained before and after heat treatment.

对于在图4、图5、图8、图10、图12、图14和图18中具有约3mm厚的玻璃基底的实施例,“EGG”是指在650度下热处理约8分钟,“HTX”是指在650度下热处理约12分钟,“HTXXX”是指在650度下热处理约20分钟。并且对于在图4、图5、图8、图10、图12、图14、图18、图27、图29、图31、图33和图36-图56中具有约6mm厚的玻璃基底的实施例,“HT”是指在650度下热处理约12分钟,“HTX”是指在650度下热处理约16分钟,并且“HTXXX”是指在650度下热处理约24分钟。热处理温度和时间仅用于参考目的(例如,以模拟不同回火和/或热弯曲工艺的示例)。For the embodiments in Figures 4, 5, 8, 10, 12, 14 and 18 having glass substrates about 3 mm thick, "EGG" means heat treated at 650 degrees for about 8 minutes, "HTX" " means heat treatment at 650 degrees for about 12 minutes, "HTXXX" means heat treatment at 650 degrees for about 20 minutes. And for the glass substrates with about 6mm thick glass substrates in Figs. Examples, "HT" refers to heat treatment at 650 degrees for about 12 minutes, "HTX" refers to heat treatment at 650 degrees for about 16 minutes, and "HTXXX" refers to heat treatment at 650 degrees for about 24 minutes. Heat treatment temperatures and times are for reference purposes only (eg, to simulate examples of different tempering and/or heat bending processes).

例如,图4和图5分别示出了实施例1和2的ΔE*值。出于示例和解释的目的,下文详细解释了实施例1的数据,并且该讨论也适用于实施例2-33的数据。For example, Figures 4 and 5 show the ΔE* values for Examples 1 and 2, respectively. The data of Example 1 is explained in detail below for purposes of illustration and explanation, and this discussion also applies to the data of Examples 2-33.

如图4所示,涂覆态(在热处理之前)的实施例1具有74.7%的可见光透射率(TY或Tvis)、89.3的透射L*值、-4.7的透射a*色值、5.8的透射b*色值、9.6%的玻璃侧反射率(RgY)、37.1的玻璃侧反射L*值、-1.1的玻璃侧反射a*色值、-10.1的玻璃侧反射b*色值、9.9%的膜侧反射率(RfY)、37.7的膜侧反射L*值、-1.5的膜侧反射a*色值、-5.7的膜侧反射b*色值和2.09欧姆/平方的薄层电阻(SR)。图2示出了实施例1中的层的厚度。具体地,图2示出实施例1的层厚度如下:玻璃/结晶掺杂Sn的ZnO(47.0nm)/Ag(15.1nm)/NiCrOx(4.1nm)/无定形锡酸锌(73.6nm)/结晶掺杂Sn的ZnO(17.7nm)/Ag(23.2nm)/NiCrOx(4.1nm)/无定形锡酸锌(10.8nm)/掺杂有铝的氮化硅(19.1nm)。As shown in Figure 4, Example 1 as coated (before heat treatment) had a visible light transmittance (TY or Tvis ) of 74.7%, a transmittance L* value of 89.3, a transmittance a* color value of -4.7, a transmittance of 5.8 Transmission b* color value, 9.6% glass side reflectance (R g Y), 37.1 glass side reflection L* value, -1.1 glass side reflection a* color value, -10.1 glass side reflection b* color value, Film side reflectance (R f Y ) of 9.9%, film side reflectance L* value of 37.7, film side reflectance a* color value of -1.5, film side reflectance b* color value of -5.7, and thin film side reflectance of 2.09 ohms/square layer resistance (SR). FIG. 2 shows the thicknesses of the layers in Example 1. FIG. Specifically, Figure 2 shows that the layer thicknesses of Example 1 are as follows: glass/crystalline Sn-doped ZnO (47.0 nm)/Ag (15.1 nm)/ NiCrOx (4.1 nm)/amorphous zinc stannate (73.6 nm) /Crystalline Sn-doped ZnO (17.7nm)/Ag (23.2nm)/ NiCrOx (4.1nm)/amorphous zinc stannate (10.8nm)/Aluminium-doped silicon nitride (19.1nm).

然后对具有6mm厚玻璃基底1的实施例1的涂覆制品进行热处理。如图4所示,在650℃下热处理约12分钟后,实施例1具有77.0%的可见光透射率(TY或Tvis)、90.3的透射L*值、-3.5的透射a*色值、4.9的透射b*色值、9.8%的玻璃侧反射率(RgY)、37.5的玻璃侧反射L*值、-0.7的玻璃侧反射a*色值、-10.5的玻璃侧反射b*色值、10.2%的膜侧反射率(RfY)、38.1的膜侧反射L*值、-1.4的膜侧反射a*色值、-8.0的膜侧反射b*色值、1.75的薄层电阻(SR)、1.8的透射ΔE*值、0.7的玻璃侧反射ΔE*值和2.4的膜侧反射ΔE*值。The coated article of Example 1 with a 6 mm thick glass substrate 1 was then heat treated. As shown in Figure 4, after heat treatment at 650°C for about 12 minutes, Example 1 had a visible light transmittance (TY or Tvis ) of 77.0%, a transmittance L* value of 90.3, a transmittance a* color value of -3.5, 4.9 Transmission b* color value of 9.8%, glass side reflectance (R g Y) of 9.8%, glass side reflection L* value of 37.5, glass side reflection a* color value of -0.7, glass side reflection b* color value of -10.5 , 10.2% film side reflectance (R f Y), 38.1 film side reflection L* value, -1.4 film side reflection a* color value, -8.0 film side reflection b* color value, 1.75 sheet resistance (SR), transmission ΔE* value of 1.8, glass side reflection ΔE* value of 0.7, and film side reflection ΔE* value of 2.4.

应当理解,实施例1的这些ΔE*值(以及实施例2-48的那些)与背景技术中所讨论的现有技术的那些值以及与上文所讨论的比较例(CE)的超过4.0的值相比有很大改善(显著更低)。因此,来自实施例的数据表明,例如当比较例的最下层电介质叠堆用类似厚度的至少结晶或基本上结晶的掺杂Sn的氧化锌层替换时(叠堆的其余部分保持基本上相同),在结晶或基本上结晶的掺杂Sn的氧化锌层3的正下方没有氮化硅基层并与之接触的情况下,结果是热稳定性高得多的产物,其具有显著更低的ΔE*值和由于热处理所致的小得多的Ag(111)峰高的变化。It should be understood that these ΔE* values of Example 1 (as well as those of Examples 2-48) are in excess of 4.0 with those of the prior art discussed in the Background and with the Comparative Example (CE) discussed above. values are greatly improved (significantly lower). Thus, data from the Examples indicate that, for example, when the lowermost dielectric stack of the Comparative Example is replaced with a similar thickness of at least crystalline or substantially crystalline Sn-doped zinc oxide layer (the remainder of the stack remains substantially the same) , in the absence of a silicon nitride base layer directly beneath and in contact with the crystalline or substantially crystalline Sn-doped zinc oxide layer 3, the result is a much more thermally stable product with a significantly lower ΔE * value and much smaller change in Ag(111) peak height due to heat treatment.

与比较例相比,其他实施例示出这些相同的出乎意料的结果。一般来讲,这些实施例表明,结晶或基本上结晶的掺杂Sn的氧化锌层和/或具有或包含SiZrOx、ZrOx、SiO2的层2、2”显著改善ΔE*值。例如,实施例1-10具有由图1(a)一般性地示出的层叠堆,其中在底部银下面的唯一电介质层为具有约90%Zn和10%Sn(重量%)的金属含量的结晶或基本上结晶的掺杂Sn的氧化锌层3。在实施例11-14、19-24、27-28中,在SiZrOx层2正上方的结晶或基本上结晶的掺杂Sn的氧化锌层3的金属含量为约90%Zn和10%Sn(重量%),其中层2的金属含量为约85%Si和15%Zr(原子%)。在实施例30-48中,结晶或基本结晶的Sn掺杂的氧化锌层3为约90%Zn和10%Sn(重量%),并且如图1(i)和图52所示直接设置在ZrO2层2上。在实施例15-16中,在ZrO2层2正上方的结晶或基本上结晶的掺杂Sn的氧化锌层3的金属含量为约90%Zn和10%Sn(重量%);并且在实施例17-18中,在掺杂有约8%Al(原子%)的SiO2层2正上方的结晶或基本上结晶的掺杂Sn的氧化锌层3的金属含量为约90%Zn和10%Sn(重量%)。这些实施例令人惊讶和出乎意料地实现了与比较例1-2相比大大改善的ΔE*值。The other examples show these same unexpected results compared to the comparative examples. In general, these examples show that crystalline or substantially crystalline Sn-doped zinc oxide layers and/or layers 2, 2 " with or comprising SiZrOx , ZrOx , SiO2 significantly improve ΔE* values. For example, Examples 1-10 have the layer stack shown generally by Figure 1(a), where the only dielectric layer under the bottom silver is a crystalline or Substantially crystalline Sn-doped zinc oxide layer 3. In Examples 11-14, 19-24, 27-28, a crystalline or substantially crystalline Sn-doped zinc oxide layer directly over SiZrO x layer 2 The metal content of 3 is about 90% Zn and 10% Sn (wt %), where the metal content of layer 2 is about 85% Si and 15% Zr (at %). In Examples 30-48, the crystalline or substantially crystalline The Sn-doped zinc oxide layer 3 is about 90% Zn and 10% Sn (wt %) and is disposed directly on the ZrO 2 layer 2 as shown in Figure 1(i) and Figure 52. In Examples 15-16 , the metal content of the crystalline or substantially crystalline Sn-doped zinc oxide layer 3 directly above the ZrO 2 layer 2 is about 90% Zn and 10% Sn (wt %); and in Examples 17-18, The crystalline or substantially crystalline Sn-doped zinc oxide layer 3 directly above the SiO 2 layer 2 doped with about 8% Al (at %) has a metal content of about 90% Zn and 10% Sn (wt %) These examples surprisingly and unexpectedly achieve greatly improved ΔE* values compared to Comparative Examples 1-2.

实施例1-10的层叠堆由图1(a)一般性地示出。实施例11-14、19和27的层叠堆由图1(b)一般性地示出,其中层2为SiZrOx。实施例15-16的层叠堆由图1(b)一般性地示出,其中层2为ZrO2。实施例17-18的层叠堆由图1(b)一般性地示出,其中层2为SiO2。实施例20-21和28的层叠堆由图1(e)一般性地示出,其中层2和2”为SiZrOx。实施例23-24的层叠堆由图1(f)一般性地示出,其中层2和2”为SiZrOx。实施例25的层叠堆由图1(g)一般性地示出,其中层2和2”为SiZrOx。实施例22的层叠堆由图1(d)一般性地示出,其中层2为SiZrOx。实施例26的层叠堆由图1(h)一般性地示出,其中层2和2”为SiZrOx,氧化物层3'具有90%Zn和10%Sn的金属含量,并且氧化物层3、13为掺杂有约4%-8%Al的氧化锌。实施例29的层叠堆由图1(h)一般性地示出,不同的是实施例29中不存在层2”,并且层2为SiZrOx,氧化物层3'具有90%Zn和10%Sn的金属含量,并且氧化物层3、13为掺杂有约4%-8%Al的氧化锌。实施例30-48的层叠堆由图1(i)和图52一般性地示出,其中层2和2”为ZrO2。这些实施例令人惊讶和出乎意料地实现了与比较例1-2相比大大改善的ΔE*值。这些实施例表明,结晶或基本上结晶的掺杂Sn的氧化锌层(例如,层3和/或层13)和/或具有或包含SiZrOx、ZrOx、SiO2的电介质层2、2”显著改善/降低了ΔE*值。The layer stacks of Examples 1-10 are generally shown in Figure 1(a). The layer stacks of Examples 11-14, 19 and 27 are generally shown in Figure 1(b), where layer 2 is SiZrOx . The layer stack of Examples 15-16 is shown generally in Figure 1(b), where layer 2 is ZrO2. The layer stack of Examples 17-18 is generally shown in Figure 1(b), where layer 2 is SiO2 . The layer stacks of Examples 20-21 and 28 are generally shown in Figure 1(e), where layers 2 and 2" are SiZrOx . The layer stacks of Examples 23-24 are generally shown in Figure 1(f) out, where layers 2 and 2" are SiZrOx . The layer stack of Example 25 is generally shown in Figure 1(g), where layers 2 and 2" are SiZrOx . The layer stack of Example 22 is generally shown in Figure 1(d), where layer 2 is SiZrOx . The layer stack of Example 26 is generally shown in Figure 1(h), where layers 2 and 2" are SiZrOx , oxide layer 3' has a metal content of 90% Zn and 10% Sn, and is oxidized The material layers 3, 13 are zinc oxide doped with about 4%-8% Al. The layer stack of Example 29 is generally shown in Figure 1(h), except that in Example 29 layer 2" is absent and layer 2 is SiZrOx and oxide layer 3' has 90% Zn and 10% The metal content of Sn, and the oxide layers 3, 13 are zinc oxide doped with about 4%-8% Al. The layer stacks of Examples 30-48 are generally shown in Figures 1(i) and 52, Wherein layers 2 and 2 " are ZrO2. These Examples surprisingly and unexpectedly achieve greatly improved ΔE* values compared to Comparative Examples 1-2. These examples show that crystalline or substantially crystalline Sn-doped zinc oxide layers (eg layer 3 and/or layer 13) and/or dielectric layers 2, 2 " with or comprising SiZrOx , ZrOx , SiO2" Significantly improved/decreased ΔE* values.

例如,将实施例23-24(添加至涂层的中心电介质部分的SiZrOx层2”,如图1(f)所示)与实施例22(在中心电介质部分中没有此类层2”,如图1(d)所示)进行比较表明和证明,在实施例23-24中添加SiZrOx层2”出乎意料地改善/降低了至少玻璃侧反射ΔE*值。因此,应当理解,SiZrOx层2”的添加提供了出乎意料的结果。For example, combining Examples 23-24 ( SiZrOx layer 2" added to the central dielectric portion of the coating, as shown in Figure 1(f)) with Example 22 (no such layer 2" in the central dielectric portion, A comparison as shown in Figure 1(d) shows and demonstrates that the addition of a SiZrO x layer 2" in Examples 23-24 unexpectedly improves/decreases at least the glass side reflection ΔE* value. Therefore, it should be understood that SiZrO The addition of x -layer 2" provided unexpected results.

此外,将实施例28(添加至涂层的中心电介质部分的SiZrOx层2”,如图1(e)所示)与实施例27(在中心电介质部分中没有此类层2”,如图1(b)所示)进行比较进一步表明和证明,在实施例28中添加SiZrOx层2”出乎意料地改善/降低了玻璃侧反射ΔE*值。因此,应当再次理解,SiZrOx或ZrO2层2”的添加提供了关于改善热稳定性的出乎意料的结果。In addition, Example 28 ( SiZrOx layer 2" added to the central dielectric portion of the coating, as shown in Fig. 1(e)) was combined with Example 27 (no such layer 2" in the central dielectric portion, as shown in Fig. 1(b)), it is further shown and demonstrated that the addition of the SiZrOx layer 2" in Example 28 unexpectedly improves/decreases the glass side reflection ΔE* value. Therefore, it should be understood again that SiZrOx or ZrO The addition of 2 layers 2" provided unexpected results regarding improved thermal stability.

实施例30-48由图1(i)和图52一般性地示出,其包括吸收膜57、59,在这些实施例中层2和2”为ZrO2。这些实施例令人惊讶和出乎意料地实现了与比较例1-2相比大大改善的ΔE*值。实施例30-48表明,结晶或基本上结晶的Sn掺杂的氧化锌层(例如,层3和/或13)和具有或包含ZrO2的电介质层2、2”以出乎意料的方式显著改善/降低ΔE*值。实施例30-48进一步表明,提供包括含银层57和含NiCrOx层59的吸收膜允许将可见光透射率调节至期望值,而不牺牲所得涂覆制品的热稳定性或所需颜色。例如,具有如图1(i)所示的Ag/NiCrOx吸收膜(57、59)的实施例30-48与使用单一NiCr层吸收体的实施例23-24相比具有令人惊讶的更中性的玻璃侧反射b*值(Rg b*或R-out b*)。Examples 30-48 are generally shown in Figures 1(i) and 52, which include absorber films 57, 59, in which layers 2 and 2 " are ZrO2. These examples are surprising and unexpected Significantly improved ΔE* values were unexpectedly achieved compared to Comparative Examples 1-2. Examples 30-48 demonstrate that crystalline or substantially crystalline Sn-doped zinc oxide layers (eg, layers 3 and/or 13) and Dielectric layers 2, 2 " with or containing ZrO2 significantly improve/reduce ΔE* values in an unexpected manner. Examples 30-48 further demonstrate that providing an absorber film including a silver-containing layer 57 and a NiCrOx -containing layer 59 allows the visible light transmittance to be adjusted to a desired value without sacrificing thermal stability or desired color of the resulting coated article. For example, Examples 30-48 with Ag/NiCrO x absorber films (57, 59) as shown in Figure 1(i) are surprisingly more efficient than Examples 23-24 using a single NiCr layer absorber Neutral glass side reflection b* value (Rg b* or R-out b*).

将实施例34-42和48与比较例(CE)43-47进行比较,可以看出,已经令人惊讶和出乎意料地发现,最初溅射沉积具有或包含氧化硅、氧化锆、氮氧化锆、氧化硅锆和/或氮氧化硅锆(SiZrOx、ZrO2、SiO2和/或SiZrOxNy)的电介质层2和/或2”以在实施例34-42和48中包含单斜晶相晶体结构是有利的,因为其导致涂覆制品在热处理(HT)时具有改善的热稳定性(较低的ΔE*值)和/或减少的可见光透射率(例如Tvis或TY)变化。一般而言,与具有单斜晶ZrO2层2、2”并因此具有改善的/较低的ΔE*值的实施例34-42和48相比,可仍然根据本发明的某些示例性实施方案的CE 43-47由于非单斜晶ZrO2层2、2”而具有不太优选的(较高的)ΔE*值。在某些示例性实施方案中,与某些溅射设备有关,电介质层(例如,ZrO2)2和/或2”的单斜晶相(例如,参见图51的上图中的m-ZrO2峰)可以通过在该层的溅射沉积过程中对该层使用高氧气流量,并使用金属溅射靶(例如,金属Zr或SiZr靶)(例如,参见图55)来实现,如在实施例34-42中。在这方面,图51示出在HT之前和之后的使用金属Zr靶(上图)和陶瓷ZrOx靶(下图)溅射沉积ZrO2层的曲线图,并且显示当使用金属靶与高气流量(例如,参见图55)时该层包括单斜晶相(参见m-ZrO2处的峰),而当在该某些情况下使用陶瓷靶时该层不包括单斜晶相。然而,应注意,已发现当溅射沉积使用如实施例48中的陶瓷靶与低或高氧气流量(具体取决于所用的溅射设备的类型)时,确实可以实现层2和/或2”的单斜晶相。Comparing Examples 34-42 and 48 with Comparative Examples (CE) 43-47, it can be seen that it has been surprisingly and unexpectedly found that the initial sputter deposition has or contains silicon oxide, zirconium oxide, oxynitride Dielectric layers 2 and/or 2" of zirconium, silicon zirconium oxide, and/or silicon zirconium oxynitride ( SiZrOx , ZrO2, SiO2 , and/or SiZrOxNy ) to include monolayers in Examples 34-42 and 48 The oblique phase crystal structure is advantageous as it results in coated articles with improved thermal stability (lower ΔE* values) and/or reduced visible light transmittance (eg T vis or TY ) upon heat treatment (HT) Variations. In general, compared to Examples 34-42 and 48, which have monoclinic ZrO layers 2 , 2" and thus have improved/lower ΔE* values, some examples of the invention may still be in accordance with the present invention. Exemplary embodiments CE 43-47 have less preferred (higher) ΔE* values due to non-monoclinic ZrO layers 2 , 2". In certain exemplary embodiments, with certain sputtering equipment Relatedly, the monoclinic phase of the dielectric layer (eg, ZrO 2 ) 2 and/or 2 ″ (eg, see the m-ZrO peak in the upper panel of FIG. This layer was achieved using a high oxygen flow rate and using a metal sputter target (eg, a metal Zr or SiZr target) (eg, see Figure 55), as in Examples 34-42. In this regard, Figure 51 shows graphs of sputter deposition of ZrO2 layers using a metallic Zr target (top panel) and a ceramic ZrOx target (bottom panel ) before and after HT, and shows when a metal target is used with high gas The layer includes a monoclinic phase (see peak at m-ZrO 2 ) at flow rate (see, eg, Figure 55 ), and does not include a monoclinic phase when a ceramic target is used in some cases. It should be noted, however, that it has been found that layers 2 and/or 2" can indeed be achieved when sputter deposition uses a ceramic target as in Example 48 with low or high oxygen flow rates (depending on the type of sputter equipment used) the monoclinic phase.

图52(也参见图1(i))是根据实施例34-42、48和比较例(CE)43-47的涂覆制品的剖视图。图53示出实施例34-42的光学数据:各实施例最左边数据列中在热处理之前涂覆态(AC;退火)以及各实施例右边数据列中在650℃下热处理12分钟之后(HT),实施例34-42具有如图1(i)和图52所示的涂层叠堆,其中用金属Zr靶沉积单斜晶ZrO2层2和2”,并且实施例34-42的层厚度如图55所示;其中样品7982是实施例34,样品8077是实施例35,样品8085是实施例36,样品8090是实施例37,样品8091是实施例38,样品8097是实施例39,样品8186是实施例40,样品8187是实施例41,并且样品8202是实施例42。图55为示出具有单斜晶ZrO2层的实施例37的沉积工艺条件和层厚度的图表,其中每层的溅射工艺期间的总氧气流量(ml)由O2设定值、O2调节和O2偏移之和表示,ZrO2层的溅射沉积期间的高氧气流量有助于提供实施例37的ZrO2层2和2”的单斜晶相(单斜晶实施例34-36和38-42具有类似的工艺条件)。在图52和图1(i)的实施方案中,应注意,例如,在某些示例性实例中可以省略中心ZrO2层2”。Figure 52 (see also Figure 1(i)) is a cross-sectional view of coated articles according to Examples 34-42, 48 and Comparative Examples (CE) 43-47. Figure 53 shows the optical data for Examples 34-42: as coated (AC; annealed) before heat treatment in the leftmost data column of each example and after heat treatment at 650°C for 12 minutes (HT) in the right data column of each example ), Examples 34-42 have the coating stacks shown in Figures 1(i) and 52 in which monoclinic ZrO2 layers 2 and 2" were deposited with a metallic Zr target, and the layers of Examples 34-42 The thickness is shown in Figure 55; wherein sample 7982 is embodiment 34, sample 8077 is embodiment 35, sample 8085 is embodiment 36, sample 8090 is embodiment 37, sample 8091 is embodiment 38, sample 8097 is embodiment 39, Sample 8186 is Example 40, sample 8187 is Example 41, and sample 8202 is Example 42. Figure 55 is a graph showing deposition process conditions and layer thicknesses for Example 37 with a monoclinic ZrO layer, where each The total oxygen flow (ml ) during the sputtering process of the layer is represented by the sum of the O setpoint, the O trim and the O offset, the high oxygen flow during the sputter deposition of the ZrO layer helps to provide examples Monoclinic phase of ZrO2 layers 2 and 2" of 37 (monoclinic examples 34-36 and 38-42 had similar process conditions). In the embodiment of Figure 52 and Figure 1(i), it should be noted that, for example, the central ZrO 2 layer 2" may be omitted in certain illustrative examples.

图57为示出具有单斜晶ZrO2层2(省略层2”)的实施例48的沉积工艺条件和层厚度的图表,其中使用陶瓷ZrO2靶溅射沉积具有单斜晶相的ZrO层2。实施例48的层叠堆显示于图1(i)和图52(省略层2”)中,且相应的层厚度提供于图57中。图58示出根据实施例48的涂层在各种热处理时间之后的ΔE*值,并且图59示出根据实施例48的涂层的光学数据和薄层电阻数据。57 is a graph showing the deposition process conditions and layer thicknesses of Example 48 having a monoclinic ZrO layer 2 (layer 2 " omitted), wherein the ZrO layer having a monoclinic phase was sputter deposited using a ceramic ZrO target 2. The layer stack of Example 48 is shown in Figures 1(i) and 52 (layer 2" omitted), and the corresponding layer thicknesses are provided in Figure 57. 58 shows ΔE* values for coatings according to Example 48 after various heat treatment times, and FIG. 59 shows optical data and sheet resistance data for coatings according to Example 48.

图54示出比较例(CE)43-47的光学数据:各实施例最左边数据列中在热处理之前涂覆态(AC;退火)以及各实施例右边数据列中在650℃下热处理12分钟之后(HT),实施例43-47具有如图1(i)和图52所示的涂层叠堆,其中用陶瓷靶沉积非单斜晶ZrO2层,并且实施例43-47的层厚度如图56所示;其中样品8392是CE 43,样品8394是CE 44,样品8395是CE45,样品8396是CE 46,并且样品8397是CE 47。图56为示出具有非单斜晶ZrO2层2和2”的比较例(CE)44的沉积工艺条件和层厚度的图表,其中每层的溅射工艺期间的总氧气流量(ml)由O2设定值、O2调节和O2偏移之和表示,ZrO2层溅射沉积期间的低氧气流量与陶瓷ZrOx靶一起有助于提供实施例44的ZrO2层的非单斜晶相(非单斜晶实施例43和45-47具有类似的工艺条件)。Figure 54 shows optical data for Comparative Examples (CE) 43-47: as coated (AC; annealed) prior to heat treatment in the leftmost data column of each example and heat treated at 650°C for 12 minutes in the right data column of each example After (HT), Examples 43-47 had the coating stacks shown in Figure 1(i) and Figure 52, in which a non - monoclinic ZrO2 layer was deposited with a ceramic target, and the layer thicknesses of Examples 43-47 As shown in Figure 56; where sample 8392 is CE 43, sample 8394 is CE 44, sample 8395 is CE45, sample 8396 is CE 46, and sample 8397 is CE 47. Figure 56 is a graph showing deposition process conditions and layer thicknesses for Comparative Example (CE) 44 with non-monoclinic ZrO layers 2 and 2" where the total oxygen flow (ml) during the sputtering process for each layer is given by The sum of the O setpoint, O trim , and O offset indicates that the low oxygen flow during sputter deposition of the ZrO layer, together with the ceramic ZrO target, helps to provide the non - monoclinic of the ZrO layer of Example 44 Crystal Phase (Non-monoclinic Examples 43 and 45-47 had similar process conditions).

将实施例34-42、48与比较例(CE)43-47进行比较,可以看出,与具有非单斜晶相ZrO2层2和2”的实施例43-47相比,具有沉积态的单斜晶ZrO2层2和2”的实施例34-42、48实现了更低/更好的ΔE*值,并因此改善了HT时的热稳定性和颜色匹配。Comparing Examples 34-42 , 48 with Comparative Examples (CE) 43-47, it can be seen that the as-deposited state of Examples 34-42, 48 of monoclinic ZrO 2 layers 2 and 2" achieved lower/better ΔE* values and thus improved thermal stability and color matching at HT.

某些术语在玻璃涂层领域中普遍使用,尤其是当定义涂覆玻璃的性能和太阳能管理特性时。此类术语根据其熟知的含义用于本文。例如,如本文所用:Certain terms are commonly used in the field of glass coatings, especially when defining the properties and solar management characteristics of coated glass. Such terms are used herein according to their well-known meanings. For example, as used herein:

反射的可见波长光的强度,即“反射率”由其百分比定义,并报告为RxY或Rx(即下文在ASTM E-308-85中引用的Y值),其中“X”对于玻璃侧为“G”或对于膜侧为“F”。“玻璃侧”(例如“G”或“g”)是指从玻璃基底的与涂层所在侧相反的一侧观察,而“膜侧”(即,“F”或“f”)是指从玻璃基底的涂层所在侧观察。The intensity of reflected visible wavelength light, "reflectance" is defined by its percentage and reported as R x Y or R x (i.e. the Y value quoted below in ASTM E-308-85), where "X" for glass "G" for the side or "F" for the membrane side. "Glass side" (eg, "G" or "g") refers to viewing from the opposite side of the glass substrate from the side where the coating is located, while "film side" (ie, "F" or "f") refers to viewing from The coated side of the glass substrate is viewed.

本文使用CIE LAB a*、b*坐标和标度(即CIE a*b*图,Ill.CIE-C,2度观察器)测量和报告颜色特性。可等同地使用其他类似的坐标(诸如通过下标“h”来表示Hunter Lab标度的常规使用)或Ill.CIE-C 100观察器或CIE LUV u*v*坐标。本文根据ASTM D-2244-93“Standard Test Method for Calculation of Color Differences FromInstrumentally Measured Color Coordinates”9/15/93来定义这些标度,如由ASTM E-308-85,Annual Book of ASTM Standards,第06.01卷,“Standard Method for Computingthe Colors of Objects by 10 Using the CIE System”扩增和/或如IES LIGHTINGHANDBOOK 1981参考卷中报导的。Color properties are measured and reported herein using the CIE LAB a*, b* coordinates and scale (ie, CIE a*b* diagram, Ill. CIE-C, 2 degree viewer). Other similar coordinates (such as by the subscript "h" to denote conventional use of the Hunter Lab scale) or Ill. CIE-C 100 viewer or CIE LUV u *v* coordinates may equally be used. These scales are defined herein in accordance with ASTM D-2244-93 "Standard Test Method for Calculation of Color Differences From Instrumentally Measured Color Coordinates" 9/15/93, as described by ASTM E-308-85, Annual Book of ASTM Standards, No. 06.01 Volume, "Standard Method for Computing the Colors of Objects by 10 Using the CIE System" expanded and/or as reported in the IES LIGHTING HANDBOOK 1981 reference volume.

可见光透射率可使用已知的常规技术来测量。例如,通过使用分光光度计,诸如Perkin Elmer Lambda 900或Hitachi U4001,获得透射的光谱曲线。然后使用前述ASTM308/2244-93方法计算可见光透射率。如果需要,可采用比规定更少数量的波长点。另一种用于测量可见光透射率的技术是采用光度计,诸如Pacific Scientific公司制造的可商购获得的Spectrogard分光光度计。该装置直接测量并报告可见光透射率。如本文报告和测量的,本文的可见光透射率(即CIE三色激励体系中的Y值,ASTM E-308-85)以及a*、b*和L*值和玻璃/膜侧反射率值使用Ill.C.2度观察器标准。Visible light transmittance can be measured using known conventional techniques. For example, by using a spectrophotometer, such as a Perkin Elmer Lambda 900 or Hitachi U4001, a spectral curve of transmission is obtained. Visible light transmittance was then calculated using the aforementioned ASTM308/2244-93 method. If desired, a smaller number of wavelength points than specified may be used. Another technique for measuring visible light transmittance is to use a photometer, such as the commercially available Spectrogard spectrophotometer manufactured by Pacific Scientific Corporation. The device directly measures and reports visible light transmittance. As reported and measured herein, the visible light transmittance (ie, the Y value in the CIE tristimulus system, ASTM E-308-85) as well as the a*, b*, and L* values and glass/film side reflectance values are used herein Ill.C. 2 Degree Observer Standard.

本文所用的另一个术语是“薄层电阻”。薄层电阻(Rs)是本领域熟知的术语,并且根据其熟知的含义用于本文。此处以欧姆/平方单位报告。一般来讲,该术语是指玻璃基底上的层体系的任何正方形对通过层体系的电流的电阻(单位为欧姆)。薄层电阻是层或层体系反射红外能量的程度的指示,因此通常与发射率一起用作该特性的量度。“薄层电阻”可例如通过使用4点探针欧姆计诸如由Signatone Corp.(Santa Clara,California)生产的具有M-800型Magnetron Instruments Corp.头的可分配4点电阻率探针方便地测量。Another term used herein is "sheet resistance". Sheet resistance (Rs) is a term well known in the art and is used herein according to its well known meaning. Reported here in ohms/square. In general, the term refers to the resistance (in ohms) of any square of a layer system on a glass substrate to current flow through the layer system. Sheet resistance is an indication of how well a layer or layer system reflects infrared energy and is therefore often used along with emissivity as a measure of this property. "Sheet resistance" can be conveniently measured, for example, by using a 4-point probe ohmmeter such as a distributable 4-point resistivity probe with a Magnetron Instruments Corp. head, model M-800, manufactured by Signatone Corp. (Santa Clara, California) .

如本文所用,术语“热处理(heat treatment)”和“热处理(heat treating)”意指将制品加热到足以实现含玻璃的涂覆制品的热回火、热弯曲和/或热强化的温度。该定义包括例如将涂覆制品在烘箱或炉中在至少约580℃、更优选地至少约600℃(包括650℃)的温度下加热足够的时间段以允许回火、弯曲和/或热强化。在某些情况下,热处理可持续如本文所讨论的至少约8分钟或更长。As used herein, the terms "heat treatment" and "heat treating" mean heating an article to a temperature sufficient to effect thermal tempering, thermal bending and/or thermal strengthening of a glass-containing coated article. This definition includes, for example, heating the coated article in an oven or furnace at a temperature of at least about 580°C, more preferably at least about 600°C (including 650°C) for a sufficient period of time to allow tempering, bending and/or thermal strengthening . In some cases, the thermal treatment can last for at least about 8 minutes or longer as discussed herein.

在本发明的一个示例性实施方案中,提供了一种涂覆制品,所述涂覆制品包括位于玻璃基底上的涂层,其中所述涂层包括:设置在所述玻璃基底上的包含掺杂有约1%-30%Sn(重量%)的氧化锌的结晶或基本上结晶的层;包含银的第一红外(IR)反射层,所述第一红外反射层位于所述玻璃基底上并且在所述包含掺杂有约1%-30%Sn的氧化锌的第一结晶或基本上结晶的层正上方并与之接触;其中没有氮化硅基层位于所述包含掺杂有约1%-30%Sn的氧化锌的第一结晶或基本上结晶的层正下方并与之接触;至少一个电介质层,其具有单斜晶相并且包含锆氧化物(例如ZrO2),并且任选地还包含其他元素,诸如Si;其中所述包含锆氧化物的至少一个电介质层位于:(1)至少所述玻璃基底与所述包含掺杂有约1%-30%Sn(重量%)的氧化锌的第一结晶或基本上结晶的层之间,和/或(2)所述涂层的至少所述包含银的第一IR反射层与包含银的第二IR反射层之间;任选的吸收膜,所述吸收膜包括包含银的层,其中所述吸收膜的所述包含银的第一IR反射层的物理厚度与所述包含银的层的物理厚度的比率为至少5:1(更优选地至少8:1,甚至更优选地至少10:1,并且最优选地至少15:1);并且其中所述涂覆制品被构造成具有单片测量的以下中的至少两者:(i)由于在约650℃的温度下进行参考热处理12分钟所致的不大于3.0的透射ΔE*值,(ii)由于在约650℃的温度下进行所述参考热处理12分钟所致的不大于3.0的玻璃侧反射ΔE*值,以及(iii)由于在约650℃的温度下进行所述参考热处理12分钟所致的不大于3.5的膜侧反射ΔE*值。In an exemplary embodiment of the present invention, there is provided a coated article comprising a coating on a glass substrate, wherein the coating comprises: a coating comprising a dopant disposed on the glass substrate A crystalline or substantially crystalline layer of zinc oxide doped with about 1% to 30% Sn (wt %); a first infrared (IR) reflective layer comprising silver on said glass substrate and directly above and in contact with said first crystalline or substantially crystalline layer comprising zinc oxide doped with about 1%-30% Sn; %-30% Sn, directly below and in contact with a first crystalline or substantially crystalline layer of zinc oxide; at least one dielectric layer having a monoclinic phase and comprising zirconium oxide (eg ZrO 2 ), and optionally The ground also contains other elements, such as Si; wherein the at least one dielectric layer comprising zirconium oxide is located at: (1) at least the glass substrate and the between a first crystalline or substantially crystalline layer of zinc oxide, and/or (2) between at least the first IR reflective layer comprising silver and the second IR reflective layer comprising silver of (2) the coating; any A selected absorber film comprising a layer comprising silver, wherein the ratio of the physical thickness of the first IR reflective layer comprising silver to the physical thickness of the layer comprising silver of the absorber film is at least 5: 1 (more preferably at least 8:1, even more preferably at least 10:1, and most preferably at least 15:1); and wherein the coated article is constructed to have at least two of the following measured in a single piece : (i) a transmission ΔE* value of not greater than 3.0 due to the reference heat treatment at a temperature of about 650°C for 12 minutes, (ii) due to the reference heat treatment at a temperature of about 650°C for 12 minutes A glass side reflection ΔE* value of not greater than 3.0, and (iii) a film side reflection ΔE* value of not greater than 3.5 due to the reference heat treatment at a temperature of about 650°C for 12 minutes.

前一段落所述的涂覆制品可被构造成具有单片测量的以下中的全部三者:(i)由于在约650℃的温度下进行参考热处理12分钟所致的不大于3.0的透射ΔE*值,(ii)由于在约650℃的温度下进行所述参考热处理12分钟所致的不大于3.0的玻璃侧反射ΔE*值,以及(iii)由于在约650℃的温度下进行所述参考热处理12分钟所致的不大于3.5的膜侧反射ΔE*值。The coated article described in the preceding paragraph can be constructed to have all three of the following measured monolithically: (i) a transmission ΔE* of not greater than 3.0 due to a reference heat treatment at a temperature of about 650°C for 12 minutes value, (ii) a glass side reflection ΔE* value of not greater than 3.0 due to the reference heat treatment at a temperature of about 650°C for 12 minutes, and (iii) due to the reference heat treatment at a temperature of about 650°C Film side reflection ΔE* value of not more than 3.5 due to heat treatment for 12 minutes.

在前述两个段落中任一段落所述的涂覆制品中,所述包含锆氧化物的至少一个电介质层可至少位于至少所述玻璃基底与所述包含掺杂有约1%-30%Sn(重量%)的氧化锌的第一结晶或基本上结晶的层之间。In the coated article of either of the preceding two paragraphs, the at least one dielectric layer comprising zirconium oxide may be located at least between at least the glass substrate and the comprising doped with about 1%-30% Sn ( % by weight) between the first crystalline or substantially crystalline layers of zinc oxide.

在前述三个段落中任一段落所述的涂覆制品中,所述包含锆氧化物的至少一个电介质层可至少位于至少所述涂层的所述包含银的第一IR反射层与所述包含银的第二IR反射层之间。In the coated article of any one of the preceding three paragraphs, the at least one dielectric layer comprising zirconium oxide may be located at least between the first IR reflective layer comprising silver of the coating and the layer comprising between the second IR reflecting layer of silver.

在前述四个段落中任一段落所述的涂覆制品中,所述包含锆氧化物的至少一个电介质层可包括包含锆氧化物的第一层和包含锆氧化物的第二层(其各自还可以包含一种或多种另外的元素,诸如Si);其中所述第一层可位于至少所述玻璃基底与所述包含掺杂有约1%-30%Sn(重量%)的氧化锌的第一结晶或基本上结晶的层之间;并且其中所述第二层可位于所述涂层的至少所述包含银的第一IR反射层与所述包含银的第二IR反射层之间。In the coated article of any of the preceding four paragraphs, the at least one dielectric layer comprising zirconium oxide can include a first layer comprising zirconium oxide and a second layer comprising zirconium oxide (each further comprising may contain one or more additional elements, such as Si); wherein the first layer may be located between at least the glass substrate and the zinc oxide containing zinc oxide doped with about 1%-30% Sn (wt %) between a first crystalline or substantially crystalline layer; and wherein the second layer may be located between at least the first silver-containing IR reflective layer and the silver-containing second IR reflective layer of the coating .

在前述五个段落中任一段落所述的涂覆制品中,所述至少一个电介质层可包含锆氧化物和/或硅和锆的氧化物(例如SiZrOx)或基本上由其组成。例如,包含硅和锆的氧化物的电介质层可以具有51%-99%Si和1%-49%Zr,更优选地70%-97%Si和3%-30%Zr(原子%)的金属含量。In the coated article of any of the preceding five paragraphs, the at least one dielectric layer may comprise or consist essentially of zirconium oxide and/or oxides of silicon and zirconium (eg, SiZrO x ). For example, a dielectric layer comprising oxides of silicon and zirconium may have a metal of 51%-99% Si and 1%-49% Zr, more preferably 70%-97% Si and 3%-30% Zr (atomic %) content.

在前述六个段落中任一段落所述的涂覆制品中,所述至少一个电介质层可包含ZrO2In the coated article of any of the preceding six paragraphs, the at least one dielectric layer can comprise ZrO 2 .

在前述七个段落中任一段落所述的涂覆制品中,所述包含氧化锌的第一结晶或基本上结晶的层可掺杂有约1%-20%Sn,更优选地约5%-15%Sn(重量%)。In the coated article of any of the preceding seven paragraphs, the first crystalline or substantially crystalline layer comprising zinc oxide may be doped with about 1%-20% Sn, more preferably about 5%- 15% Sn (wt %).

在前述八个段落中任一段落所述的涂覆制品中,所述包含掺杂有Sn的氧化锌的第一结晶或基本上结晶的层可为溅射沉积态的结晶或基本上结晶的层。In the coated article of any of the preceding eight paragraphs, the first crystalline or substantially crystalline layer comprising Sn-doped zinc oxide may be a crystalline or substantially crystalline layer as sputter deposited .

根据前述九个段落中任一段落所述的涂覆制品可以被构造成具有单片测量的以下中的全部:(i)由于在约650℃的温度下进行参考热处理12分钟所致的不大于2.5的透射ΔE*值,(ii)由于在约650℃的温度下进行所述参考热处理12分钟所致的不大于2.5的玻璃侧反射ΔE*值,以及(iii)由于在约650℃的温度下进行所述参考热处理12分钟所致的不大于3.0的膜侧反射ΔE*值。A coated article according to any of the preceding nine paragraphs may be constructed to have a monolithic measurement of all of: (i) not greater than 2.5 due to a reference heat treatment at a temperature of about 650°C for 12 minutes The transmission ΔE* value of (ii) a glass side reflection ΔE* value of not greater than 2.5 due to the reference heat treatment at a temperature of about 650°C for 12 minutes, and (iii) due to a temperature of about 650°C A film side reflection ΔE* value of not more than 3.0 due to performing the reference heat treatment for 12 minutes.

根据前述十个段落中任一段落所述的涂覆制品可以被构造成具有单片测量的以下中的至少两者:(i)由于在约650℃的温度下进行参考热处理16分钟所致的不大于2.3的透射ΔE*值,(ii)由于在约650℃的温度下进行所述参考热处理16分钟所致的不大于2.0的玻璃侧反射ΔE*值,以及(iii)由于在约650℃的温度下进行所述参考热处理16分钟所致的不大于3.0的膜侧反射ΔE*值。A coated article according to any one of the ten preceding paragraphs may be constructed to have at least two of the following, measured on a single piece: (i) invariance due to a reference heat treatment at a temperature of about 650°C for 16 minutes A transmission ΔE* value greater than 2.3, (ii) a glass side reflection ΔE* value of not greater than 2.0 due to the reference heat treatment at a temperature of about 650°C for 16 minutes, and (iii) due to a ΔE* value at about 650°C A film side reflection ΔE* value of not greater than 3.0 due to the reference heat treatment at temperature for 16 minutes.

根据前述十一个段落中任一项所述的涂覆制品可被构造成使得所述涂层可具有不大于20欧姆/平方、更优选地不大于10欧姆/平方、并且最优选地不大于2.5欧姆/平方的薄层电阻(Rs)。The coated article of any of the preceding eleven paragraphs may be constructed such that the coating may have no greater than 20 ohms/square, more preferably no greater than 10 ohms/square, and most preferably no greater than Sheet resistance (R s ) of 2.5 ohms/square.

根据前述十二个段落中任一项所述的涂覆制品可具有单片测量的至少35%,更优选地至少50%,并且更优选地至少68%的可见光透射率。A coated article according to any one of the preceding twelve paragraphs may have a visible light transmittance of at least 35%, more preferably at least 50%, and more preferably at least 68% measured monolithically.

在前述十三个段落中任一段落所述的涂覆制品中,所述沉积态的涂层还可包括位于所述玻璃基底上、在至少所述包含银的第一IR反射层上方的包含锡酸锌的第一无定形或基本上无定形的层。所述包含锡酸锌的第一无定形或基本上无定形的层可具有约40%-60%Zn和约40%-60%Sn(重量%)的金属含量。In the coated article of any of the preceding thirteen paragraphs, the as-deposited coating may further include a tin-containing coating on the glass substrate over at least the first IR-reflective layer containing silver A first amorphous or substantially amorphous layer of zinc oxide. The first amorphous or substantially amorphous layer comprising zinc stannate may have a metal content of about 40-60% Zn and about 40-60% Sn (wt %).

在根据前述十四个段落中任一段落所述的涂覆制品中,所述涂层还可包括位于所述包含银的IR反射层上方并与之直接接触的接触层。接触层可包含Ni和/或Cr,并且可被或可不被氧化和/或氮化。In the coated article of any of the preceding fourteen paragraphs, the coating may further comprise a contact layer overlying and in direct contact with the silver-containing IR reflective layer. The contact layer may contain Ni and/or Cr, and may or may not be oxidized and/or nitrided.

在根据前述十五个段落中任一段落所述的涂覆制品中,所述涂层还可包括:位于所述玻璃基底上、在至少所述包含银的第一IR反射层上方的包含银的第二IR反射层,位于所述包含银的第二IR反射层下方并与之直接接触的包含掺杂有约1%-30%Sn(重量%)的氧化锌的第二结晶或基本上结晶的层。并且其中不需要氮化硅基层位于所述玻璃基底与所述包含银的第二IR反射层之间。In the coated article of any one of the preceding fifteen paragraphs, the coating may further comprise: a silver-containing film on the glass substrate over at least the first silver-containing IR reflective layer A second IR reflective layer, a second crystalline or substantially crystalline comprising zinc oxide doped with about 1%-30% Sn (wt %) below and in direct contact with the second IR reflective layer comprising silver layer. And there is no need for a silicon nitride based layer between the glass substrate and the second IR reflective layer comprising silver.

在前述十六个段落中任一段落所述的涂覆制品中,所述涂层还可包括位于所述玻璃基底上、在至少所述包含银的第二IR反射层上方的包含锡酸锌的沉积态的无定形或基本上无定形的层。为沉积态的无定形或基本上无定形的所述包含锡酸锌的无定形或基本上无定形的层可具有约40%-60%Zn和约40%-60%Sn(重量%)的金属含量。在某些示例性实施方案中,所述涂层还可包括位于至少所述包含锡酸锌的无定形或基本上无定形的层上方的包含氮化硅的层。In the coated article of any of the preceding sixteen paragraphs, the coating may further comprise zinc stannate-containing zinc stannate on the glass substrate over at least the second IR reflective layer comprising silver As-deposited amorphous or substantially amorphous layer. The amorphous or substantially amorphous layer comprising zinc stannate in the as-deposited state may have about 40%-60% Zn and about 40%-60% Sn (wt %) metal content. In certain exemplary embodiments, the coating may further include a layer comprising silicon nitride over at least the amorphous or substantially amorphous layer comprising zinc stannate.

根据前述十七个段落中任一项所述的涂覆制品可被热回火。The coated article of any of the seventeen preceding paragraphs may be thermally tempered.

前述十八个段落中任一段落所述的涂覆制品还可包括位于所述玻璃基底与所述第一IR反射层之间的金属的或基本上金属的吸收层。所述吸收层可夹在包含氮化硅的第一层和第二层之间并与它们接触。吸收层可包含Ni和Cr(例如,NiCr、NiCrMo)或任何其他合适的材料诸如NbZr。包含(a)、(b)和(c)中的至少一者的电介质层可位于至少所述吸收层与所述包含氧化锌的第一结晶或基本上结晶的层之间。The coated article of any of the preceding eighteen paragraphs may further include a metallic or substantially metallic absorbing layer between the glass substrate and the first IR reflective layer. The absorber layer may be sandwiched between and in contact with the first and second layers comprising silicon nitride. The absorber layer may contain Ni and Cr (eg, NiCr, NiCrMo) or any other suitable material such as NbZr. A dielectric layer comprising at least one of (a), (b) and (c) may be located between at least the absorber layer and the first crystalline or substantially crystalline layer comprising zinc oxide.

在前述十九个段落中任一段落所述的涂覆制品中,所述包含锆氧化物的至少一个电介质层可包含0%-20%氮,更优选地0%-10%氮,并且最优选0%-5%氮(原子%)。In the coated article of any of the preceding nineteen paragraphs, the at least one dielectric layer comprising zirconium oxide may comprise 0% to 20% nitrogen, more preferably 0% to 10% nitrogen, and most preferably 0%-5% nitrogen (atomic %).

在前述二十个段落中任一段落所述的涂覆制品中,所述吸收膜还可包括位于所述吸收膜的所述包含银的层上方并与之直接接触的包含Ni和/或Cr的氧化物的层。In the coated article of any of the twenty preceding paragraphs, the absorbent film may further comprise a Ni and/or Cr-containing layer over and in direct contact with the silver-containing layer of the absorbent film oxide layer.

在前述二十一个段落中任一段落所述的涂覆制品中,所述吸收膜可位于所述第一IR反射层上方,使得所述第一IR反射层位于至少所述吸收膜与所述玻璃基底之间。In the coated article of any of the preceding twenty-one paragraphs, the absorbing film may be positioned over the first IR reflective layer such that the first IR reflective layer is positioned between at least the absorbing film and the between glass substrates.

在前述二十二个段落中任一段落所述的涂覆制品中,所述包含银的第一IR反射层的物理厚度与所述吸收膜的所述包含银的层的物理厚度的比率可为至少8:1,更优选地至少10:1,并且甚至更优选地至少15:1。In the coated article of any of the preceding twenty-two paragraphs, the ratio of the physical thickness of the silver-containing first IR reflective layer to the physical thickness of the silver-containing layer of the absorbing film may be At least 8:1, more preferably at least 10:1, and even more preferably at least 15:1.

在前述二十三个段落中任一段落所述的涂覆制品中,所述吸收膜的所述包含银的层可以小于

Figure BDA0003538370550000441
厚,更优选地小于
Figure BDA0003538370550000442
厚,并且甚至更优选地小于
Figure BDA0003538370550000443
厚。In the coated article of any of the preceding twenty-three paragraphs, the silver-containing layer of the absorbent film may be less than
Figure BDA0003538370550000441
thick, more preferably less than
Figure BDA0003538370550000442
thick, and even more preferably less than
Figure BDA0003538370550000443
thick.

在前述二十四个段落中任一段落所述的涂覆制品中,所述涂覆制品不需要热回火。In the coated article of any of the preceding twenty-four paragraphs, the coated article does not require thermal tempering.

在前述二十五个段落中任一段落所述的涂覆制品中,所述具有单斜晶相并包含锆氧化物的至少一个电介质层可包括两个包含氧化锆的此类层且可位于以下两者处:(1)在至少所述玻璃基底与所述包含掺杂有约1%-30%Sn(重量%)的氧化锌的第一结晶或基本上结晶的层之间,和(2)在至少所述包含银的第一IR反射层与所述吸收膜之间。In the coated article of any of the preceding twenty-five paragraphs, the at least one dielectric layer having a monoclinic phase and comprising zirconium oxide may comprise two such layers comprising zirconium oxide and may be located below At both: (1) between at least the glass substrate and the first crystalline or substantially crystalline layer comprising zinc oxide doped with about 1%-30% Sn (wt %), and (2) ) between at least the first IR reflective layer comprising silver and the absorbing film.

在前述二十六个段落中任一段落所述的涂覆制品中,所述具有单斜晶相的至少一个电介质层可包含0%-5%的氮(原子%)。In the coated article of any of the preceding twenty-six paragraphs, the at least one dielectric layer having a monoclinic phase may comprise 0% to 5% nitrogen (atomic %).

在前述二十七个段落中任一段落所述的涂覆制品中,所述具有单斜晶相的至少一个电介质层可包含锆氧化物(例如ZrO2),并且可任选地还包含Si。In the coated article of any of the preceding twenty-seven paragraphs, the at least one dielectric layer having a monoclinic phase may include zirconium oxide (eg, ZrO 2 ), and may optionally further include Si.

在前述二十七个段落中任一段落所述的涂覆制品中,所述具有单斜晶相的至少一个电介质层可基本上由锆氧化物组成。In the coated article of any of the preceding twenty-seven paragraphs, the at least one dielectric layer having a monoclinic phase can consist essentially of zirconium oxide.

在前述二十八个段落中任一段落所述的涂覆制品中,所述具有单斜晶相的至少一个电介质层可被构造成在所述参考热处理时实现至少0.25g/cm3的密度变化,更优选地在所述参考热处理时实现至少0.30g/cm3的密度变化,并且最优选地在所述参考热处理时实现至少0.35g/cm3的密度变化。In the coated article of any of the preceding twenty-eight paragraphs, the at least one dielectric layer having a monoclinic phase can be configured to achieve a density change of at least 0.25 g/cm upon the reference heat treatment , more preferably a density change of at least 0.30 g/cm 3 is achieved at the reference heat treatment, and most preferably a density change of at least 0.35 g/cm 3 is achieved at the reference heat treatment.

在前述二十九个段落中任一段落所述的涂覆制品中,所述具有单斜晶相的至少一个电介质层可包含锆氧化物,并且可具有至少80%Zr的金属含量。In the coated article of any of the preceding twenty-nine paragraphs, the at least one dielectric layer having a monoclinic phase can comprise zirconium oxide and can have a metal content of at least 80% Zr.

在前述三十个段落中任一段落所述的涂覆制品中,所述具有单斜晶相的至少一个电介质层可包含锆氧化物和/或可具有

Figure BDA0003538370550000451
更优选地
Figure BDA0003538370550000452
并且最优选地
Figure BDA0003538370550000453
的厚度。In the coated article of any of the preceding thirty paragraphs, the at least one dielectric layer having a monoclinic phase may comprise zirconium oxide and/or may have
Figure BDA0003538370550000451
more preferably
Figure BDA0003538370550000452
and most preferably
Figure BDA0003538370550000453
thickness of.

在根据前述三十一个段落中任一段落所述的涂覆制品中,所述涂覆制品可被构造成具有单片测量的以下中的两者或三者:(i)在约650℃的温度下进行参考热处理12分钟时不大于3.0的透射ΔE*值,(ii)在约650℃的温度下进行所述参考热处理12分钟时不大于1.5的玻璃侧反射ΔE*值,以及(iii)在约650℃的温度下进行所述参考热处理12分钟时不大于1.5的膜侧反射ΔE*值。In the coated article of any one of the preceding thirty-one paragraphs, the coated article may be configured to have two or three of the following, measured on a single sheet: (i) at about 650°C a transmission ΔE* value of not greater than 3.0 for a reference heat treatment at a temperature of 12 minutes, (ii) a glass side reflection ΔE* value of not greater than 1.5 for the reference heat treatment at a temperature of about 650°C for 12 minutes, and (iii) A film side reflection ΔE* value of not greater than 1.5 when the reference heat treatment was performed at a temperature of about 650°C for 12 minutes.

前述三十二个段落中任一段落所述的涂覆制品可以作为单片窗提供,或以联接到另一玻璃基底的IG窗单元提供。The coated article of any of the preceding thirty-two paragraphs may be provided as a monolithic window, or as an IG window unit coupled to another glass substrate.

在前述三十三个段落中任一段落所述的涂覆制品中,在参考热处理之前和/或之后,所述包含单斜晶相的至少一个电介质层还可以包含四方晶相。In the coated article of any of the preceding thirty-three paragraphs, before and/or after the reference heat treatment, the at least one dielectric layer comprising a monoclinic phase may also comprise a tetragonal phase.

在一个示例性实施方案中,提供了一种制备在玻璃基底上包括涂层的涂覆制品的方法,所述方法包括:在所述玻璃基底上溅射沉积包含锌的层;在所述玻璃基底上溅射沉积包含银的第一红外(IR)反射层,所述第一红外反射层位于包含氧化锌的层上方并与之接触;在所述玻璃基底上溅射沉积具有单斜晶相的至少一个电介质层(例如,锆氧化物,诸如ZrO2),其中所述具有单斜晶相的电介质层包含锆氧化物(并且其还可以包含其他元素,诸如Si);其中所述具有单斜晶相并包含锆氧化物的至少一个电介质层位于:(1)至少所述玻璃基底与所述包含氧化锌的层之间,和/或(2)所述涂层的至少所述包含银的第一IR反射层与包含银的第二IR反射层之间;并且其中所述涂覆制品被构造成具有单片测量的以下中的至少两者:(i)在约650℃的温度下进行参考热处理12分钟时不大于3.0的透射ΔE*值,(ii)在约650℃的温度下进行所述参考热处理12分钟时不大于3.0的玻璃侧反射ΔE*值,以及(iii)在约650℃的温度下进行所述参考热处理12分钟时不大于3.5的膜侧反射ΔE*值。TIn an exemplary embodiment, there is provided a method of making a coated article comprising a coating on a glass substrate, the method comprising: sputter depositing a layer comprising zinc on the glass substrate; sputter-deposited on a substrate a first infrared (IR) reflective layer comprising silver over and in contact with a layer comprising zinc oxide; sputter-deposited on the glass substrate having a monoclinic phase at least one dielectric layer (eg, zirconium oxide , such as ZrO2), wherein the dielectric layer having a monoclinic phase comprises zirconium oxide (and which may also comprise other elements, such as Si); wherein the monoclinic phase At least one dielectric layer of oblique phase and comprising zirconium oxide is located: (1) between at least the glass substrate and the layer comprising zinc oxide, and/or (2) at least the silver comprising layer of the coating and wherein the coated article is constructed to have at least two of the following measured monolithically: (i) at a temperature of about 650°C A transmission ΔE* value of not greater than 3.0 when the reference heat treatment was performed for 12 minutes, (ii) a glass side reflection ΔE* value of not greater than 3.0 when the reference heat treatment was performed at a temperature of about 650°C for 12 minutes, and (iii) at a temperature of about 650°C. A film side reflection ΔE* value of not more than 3.5 when the reference heat treatment was performed at a temperature of 650° C. for 12 minutes. T

在前一段落所述的方法中,所述在所述玻璃基底上溅射沉积具有单斜晶相的至少一个电介质层可以使用至少6ml/kW的氧气流量,更优选地至少8ml/kW或10ml/kW的氧气流量。In the method described in the preceding paragraph, the sputter deposition of the at least one dielectric layer having a monoclinic phase on the glass substrate may use an oxygen flow rate of at least 6ml/kW, more preferably at least 8ml/kW or 10ml/kW kW of oxygen flow.

在前述两个段落中任一段落所述的方法中,所述具有单斜晶相的至少一个电介质层可包含ZrO2,并且还可以包含Si。In the method of either of the preceding two paragraphs, the at least one dielectric layer having a monoclinic phase may include ZrO 2 , and may also include Si.

在前述三个段落中任一段落所述的方法中,所述涂覆制品可被构造成具有单片测量的以下中的至少两者或全部三者:(i)在约650℃的温度下进行参考热处理12分钟时不大于3.0的透射ΔE*值,(ii)在约650℃的温度下进行所述参考热处理12分钟时不大于1.5的玻璃侧反射ΔE*值,以及(iii)在约650℃的温度下进行所述参考热处理12分钟时不大于1.5的膜侧反射ΔE*值。In the method of any of the preceding three paragraphs, the coated article can be constructed to have at least two or all three of the following measured on a single sheet: (i) at a temperature of about 650°C a transmission ΔE* value of not greater than 3.0 at a reference heat treatment for 12 minutes, (ii) a glass side reflection ΔE* value of not greater than 1.5 at a temperature of about 650°C for 12 minutes of the reference heat treatment, and (iii) at a temperature of about 650°C A film side reflection ΔE* value of not more than 1.5 when the reference heat treatment is performed at a temperature of °C for 12 minutes.

前述四个段落中任一段落所述的方法还可以包括经由所述参考热处理来热处理所述涂覆制品,使得所述具有单斜晶相的至少一个电介质层在所述参考热处理时实现至少0.25g/cm3,更优选地至少0.30g/cm3,并且最优选地至少0.35g/cm3的密度变化。The method of any of the preceding four paragraphs may further include thermally treating the coated article via the reference heat treatment such that the at least one dielectric layer having a monoclinic phase achieves at least 0.25 g at the reference heat treatment A density change of at least 0.30 g/cm 3 , more preferably at least 0.30 g/cm 3 , and most preferably at least 0.35 g/cm 3 .

在前述五个段落中任一段落所述的方法中,所述在所述玻璃基底上溅射沉积所述具有单斜晶相的至少一个电介质层可使用金属靶或陶瓷靶。In the method of any of the preceding five paragraphs, the sputter deposition of the at least one dielectric layer having a monoclinic phase on the glass substrate may use a metal target or a ceramic target.

在前述六个段落中任一段落所述的方法中,在所述参考热处理之前和/或之后,所述包含单斜晶相的至少一个电介质层还可以包含四方晶相。In the method of any of the preceding six paragraphs, the at least one dielectric layer comprising a monoclinic phase may further comprise a tetragonal phase before and/or after the reference heat treatment.

在前述七个段落中任一段落所述的方法中,所述包含单斜晶相的至少一个电介质层可被构造成在所述参考热处理时其单斜晶峰减小。In the method of any of the preceding seven paragraphs, the at least one dielectric layer comprising a monoclinic phase may be configured such that its monoclinic peak decreases upon the reference heat treatment.

一旦给出上述公开内容,许多其他特征、修改和改进对于本领域技术人员将变得显而易见。因此,此类其他特征、修改和改进被认为是本发明的一部分,本发明的范围由以下权利要求确定:Numerous other features, modifications, and improvements will become apparent to those skilled in the art once the above disclosure is given. Accordingly, such other features, modifications and improvements are considered to be a part of this invention, the scope of which is to be determined by the following claims:

Claims (62)

1. a coated article comprising a coating on a glass substrate, wherein the coating comprises:
a first crystalline or substantially crystalline layer comprising zinc oxide doped with about 1% -30% Sn (wt%), disposed on the glass substrate;
a first Infrared (IR) reflecting layer comprising silver, the first IR reflecting layer being located on the glass substrate and directly over and in contact with the first crystalline or substantially crystalline layer comprising zinc oxide doped with about 1% -30% Sn;
wherein no silicon nitride based layer is directly beneath and in contact with the first crystalline or substantially crystalline layer comprising zinc oxide doped with about 1% -30% Sn;
at least one dielectric layer having a monoclinic phase and comprising zirconium oxide;
wherein the at least one dielectric layer having a monoclinic phase and comprising the zirconium oxide is located: (1) at least between the glass substrate and the first crystalline or substantially crystalline layer comprising zinc oxide doped with about 1% -30% Sn (wt%), and/or (2) at least between the first IR reflecting layer comprising silver and the second IR reflecting layer comprising silver of the coating;
an absorber film comprising a silver-containing layer, wherein a ratio of a physical thickness of the first silver-containing IR reflecting layer to a physical thickness of the silver-containing layer of the absorber film is at least 5:1, and wherein the silver-containing layer of the absorber film does not directly contact the first IR reflecting layer; and is
Wherein the coated article is configured to have at least two of the following measured monolithically: (i) a transmission Δ Ε value of not greater than 3.0 when subjected to a reference heat treatment at a temperature of about 650 ℃ for 12 minutes, (ii) a glass side reflection Δ Ε value of not greater than 3.0 when subjected to the reference heat treatment at a temperature of about 650 ℃ for 12 minutes, and (iii) a film side reflection Δ Ε value of not greater than 3.5 when subjected to the reference heat treatment at a temperature of about 650 ℃ for 12 minutes.
2. The coated article of claim 1, wherein the absorber film further comprises a layer comprising an oxide of Ni and/or Cr located over and in direct contact with the layer comprising silver of the absorber film.
3. The coated article of any preceding claim, wherein the absorbing film is positioned over the first IR reflecting layer such that the first IR reflecting layer is positioned between at least the absorbing film and the glass substrate.
4. The coated article of any preceding claim, wherein the ratio of the physical thickness of the first IR reflecting layer comprising silver to the physical thickness of the layer comprising silver of the absorber film is at least 8: 1.
5. The coated article of any preceding claim, wherein the ratio of the physical thickness of the first IR reflecting layer comprising silver to the physical thickness of the layer comprising silver of the absorber film is at least 10: 1.
6. The coated article of any preceding claim, wherein the ratio of the physical thickness of the first IR reflecting layer comprising silver to the physical thickness of the layer comprising silver of the absorber film is at least 15: 1.
7. The coated article of any preceding claim, wherein the thickness of the layer comprising silver of the absorber film is less than
Figure FDA0003538370540000021
8. The coated article of any preceding claim, wherein the thickness of the layer comprising silver of the absorber film is less than
Figure FDA0003538370540000022
9. The coated article of any preceding claim, wherein the thickness of the layer comprising silver of the absorber film is less than
Figure FDA0003538370540000023
10. The coated article of any preceding claim, wherein the coated article is configured to have a single measurement of all three of: (i) a transmission Δ Ε value of not greater than 3.0 when subjected to a reference heat treatment at a temperature of about 650 ℃ for 12 minutes, (ii) a glass side reflection Δ Ε value of not greater than 3.0 when subjected to the reference heat treatment at a temperature of about 650 ℃ for 12 minutes, and (iii) a film side reflection Δ Ε value of not greater than 3.5 when subjected to the reference heat treatment at a temperature of about 650 ℃ for 12 minutes.
11. The coated article of any preceding claim, wherein the at least one dielectric layer comprising a monoclinic phase is located at least between at least the glass substrate and the first crystalline or substantially crystalline layer comprising zinc oxide doped with about 1% -30% Sn (wt%).
12. The coated article of any preceding claim, wherein the at least one dielectric layer comprising a monoclinic phase is located at least between at least the first IR reflecting layer comprising silver and the second IR reflecting layer comprising silver of the coating.
13. The coated article of any preceding claim, wherein the first crystalline or substantially crystalline layer comprising zinc oxide is doped with about 1% -20% Sn (wt%).
14. The coated article of any preceding claim, wherein the first crystalline or substantially crystalline layer comprising zinc oxide is doped with about 5% -15% Sn (wt%).
15. The coated article of any preceding claim, wherein the first crystalline or substantially crystalline layer comprising Sn-doped zinc oxide is sputter-deposited crystalline or substantially crystalline.
16. The coated article of any preceding claim, wherein the coated article is configured with all of the following measured monolithically: (i) a transmission Δ Ε value of not greater than 2.5 when subjected to a reference heat treatment at a temperature of about 650 ℃ for 12 minutes, (ii) a glass side reflection Δ Ε value of not greater than 2.5 when subjected to the reference heat treatment at a temperature of about 650 ℃ for 12 minutes, and (iii) a film side reflection Δ Ε value of not greater than 3.0 when subjected to the reference heat treatment at a temperature of about 650 ℃ for 12 minutes.
17. The coated article of any preceding claim, wherein the coated article is configured to have at least two of the following measured monolithically: (i) a transmission Δ Ε value of not greater than 2.3 when subjected to a reference heat treatment at a temperature of about 650 ℃ for 16 minutes, (ii) a glass side reflection Δ Ε value of not greater than 2.0 when subjected to the reference heat treatment at a temperature of about 650 ℃ for 16 minutes, and (iii) a film side reflection Δ Ε value of not greater than 3.0 when subjected to the reference heat treatment at a temperature of about 650 ℃ for 16 minutes.
18. The coated article of any preceding claim, wherein the coating has a sheet resistance (Rg) of not greater than 10 ohms/squares)。
19. The coated article of any preceding claim, wherein the coated article has a monolithically measured visible light transmission of at least 40%.
20. The coated article of any preceding claim, wherein the as-deposited coating further comprises a first amorphous or substantially amorphous layer comprising zinc stannate on the glass substrate over at least the first IR reflecting layer comprising silver.
21. The coated article of claim 20, wherein the first amorphous or substantially amorphous layer comprising zinc stannate has a metal content of about 40% -60% Zn and about 40% -60% Sn (wt%).
22. The coated article of any preceding claim, wherein the at least one dielectric layer comprising a monoclinic phase can be configured to have its monoclinic peak reduced upon the reference thermal treatment.
23. The coated article of any preceding claim, wherein the coating further comprises:
a second IR reflecting layer comprising silver on the glass substrate over at least the first IR reflecting layer comprising silver,
a second crystalline or substantially crystalline layer comprising zinc oxide doped with about 1% -30% Sn (wt.%), located beneath and in direct contact with the second IR reflecting layer comprising silver;
wherein no silicon nitride based layer is located between the glass substrate and the second IR reflecting layer comprising silver; and is
Wherein the layer comprising silver of the absorber film does not directly contact either of the first and second IR reflecting layers.
24. The coated article of any preceding claim, wherein the coated article is not thermally tempered.
25. The coated article of any preceding claim, wherein the at least one dielectric layer comprising a monoclinic phase and comprising zirconium oxide is located at both: (1) between at least the glass substrate and the first crystalline or substantially crystalline layer comprising zinc oxide doped with about 1% -30% Sn (wt%), and (2) between at least the first IR reflecting layer comprising silver and the absorber film.
26. The coated article of claim 25, wherein the at least one dielectric layer comprising a monoclinic phase comprises 0% -5% nitrogen (at%).
27. The coated article of any preceding claim, wherein the at least one dielectric layer comprising a monoclinic phase comprises ZrO2
28. The coated article of any preceding claim, wherein the at least one dielectric layer comprising a monoclinic phase consists essentially of the zirconium oxide.
29. The coated article of any preceding claim, wherein the at least one dielectric layer comprising a monoclinic crystalline phase is configured to achieve at least 0.25g/cm upon the reference thermal treatment3The density of (a).
30. The coated article of any preceding claim, wherein the at least one dielectric layer comprising a monoclinic crystalline phase is configured to achieve at least 0.30g/cm upon the reference thermal treatment3The density of (a).
31. The coated article of any preceding claim, wherein the at least one dielectric layer comprising a monoclinic crystalline phase is configured to achieve at least 0.35g/cm upon the reference thermal treatment3The density of (a).
32. The coated article of any preceding claim, wherein the at least one dielectric layer comprising a monoclinic phase comprises zirconium oxide and has a metal content of at least 80% Zr.
33. The coated article of any preceding claim, wherein the at least one dielectric layer comprising a monoclinic phase and comprising the zirconium oxide has
Figure FDA0003538370540000051
Is measured.
34. The coated article according to any preceding claim, wherein the at least one dielectric layer comprising a monoclinic phase and comprising the zirconium oxide further comprises Si.
35. The coated article of any preceding claim, wherein the coated article is configured to have at least two of the following measured monolithically: (i) a transmission Δ Ε value of not greater than 3.0 when subjected to a reference heat treatment at a temperature of about 650 ℃ for 12 minutes, (ii) a glass side reflection Δ Ε value of not greater than 1.5 when subjected to the reference heat treatment at a temperature of about 650 ℃ for 12 minutes, and (iii) a film side reflection Δ Ε value of not greater than 1.5 when subjected to the reference heat treatment at a temperature of about 650 ℃ for 12 minutes.
36. The coated article of any preceding claim, wherein the coated article is configured to have a single measurement of all three of: (i) a transmission Δ Ε value of not greater than 3.0 when subjected to a reference heat treatment at a temperature of about 650 ℃ for 12 minutes, (ii) a glass side reflection Δ Ε value of not greater than 1.5 when subjected to the reference heat treatment at a temperature of about 650 ℃ for 12 minutes, and (iii) a film side reflection Δ Ε value of not greater than 1.5 when subjected to the reference heat treatment at a temperature of about 650 ℃ for 12 minutes.
37. A coated article comprising a coating on a glass substrate, wherein the coating comprises:
a layer comprising zinc oxide disposed on the glass substrate;
a first Infrared (IR) reflecting layer comprising silver, the first IR reflecting layer being on the glass substrate and directly over and in contact with the layer comprising zinc oxide;
wherein no silicon nitride based layer is directly beneath and in contact with the layer comprising zinc oxide;
at least one dielectric layer comprising a monoclinic phase and comprising zirconium oxide;
wherein the at least one dielectric layer comprising a monoclinic phase and comprising the zirconium oxide is located: (1) at least between the glass substrate and the layer comprising zinc oxide, and/or (2) at least between the first IR reflecting layer comprising silver and the second IR reflecting layer comprising silver of the coating; and is
Wherein the coated article is configured to have at least two of the following measured monolithically: (i) a transmission Δ Ε value of not greater than 3.0 when subjected to a reference heat treatment at a temperature of about 650 ℃ for 12 minutes, (ii) a glass side reflection Δ Ε value of not greater than 3.0 when subjected to the reference heat treatment at a temperature of about 650 ℃ for 12 minutes, and (iii) a film side reflection Δ Ε value of not greater than 3.5 when subjected to the reference heat treatment at a temperature of about 650 ℃ for 12 minutes.
38. The coated article of claim 35, wherein the coated article is not thermally tempered.
39. The coated article of any one of claims 35-36, wherein the at least one dielectric layer comprising a monoclinic crystalline phase comprises two layers comprising zirconia, wherein one layer is located between (1) at least the glass substrate and the layer comprising zinc oxide, and wherein the other layer is located between (2) at least the first IR reflecting layer comprising silver and the second IR reflecting layer comprising silver.
40. The coated article of any of claims 35-37, wherein the at least one dielectric layer comprising a monoclinic phase comprises 0% -5% nitrogen (at%).
41. The coated article of any one of claims 35-38, wherein the at least one dielectric layer comprising a monoclinic phase and comprising the zirconium oxide further comprises Si.
42. The coated article of any of claims 35-38, wherein the at least one dielectric layer comprising a monoclinic phase consists essentially of zirconium oxide.
43. The coated article of any of claims 35-40, wherein the at least one dielectric layer comprising a monoclinic crystalline phase is configured to achieve at least 0.25g/cm upon the reference thermal treatment3Is changed in density, and
wherein the at least one dielectric layer comprising a monoclinic phase can be configured to have its monoclinic peak reduced upon the reference thermal treatment.
44. The coated article of any of claims 35-41, wherein the at least one dielectric layer comprising a monoclinic crystalline phase is configured to achieve at least 0.30g/cm upon the reference thermal treatment3The density of (a).
45. The coated article of any of claims 35-42, wherein the at least one dielectric layer comprising a monoclinic crystalline phase is configured to achieve at least 0.35g/cm upon the reference thermal treatment3The density of (a).
46. The coated article of any of claims 35-43, wherein the at least one dielectric layer comprising a monoclinic phase has a metal content of at least 80% Zr.
47. The coated article of any of claims 35-44, wherein the at least one dielectric layer comprising a monoclinic phase has
Figure FDA0003538370540000071
Is measured.
48. The coated article of any of claims 35-45, wherein the at least one dielectric layer comprising a monoclinic phase further comprises a tetragonal phase.
49. The coated article of any one of claims 35-46, wherein the coated article is configured to have at least two of the following measured monolithically: (i) a transmission Δ Ε value of not greater than 3.0 when subjected to a reference heat treatment at a temperature of about 650 ℃ for 12 minutes, (ii) a glass side reflection Δ Ε value of not greater than 1.5 when subjected to the reference heat treatment at a temperature of about 650 ℃ for 12 minutes, and (iii) a film side reflection Δ Ε value of not greater than 1.5 when subjected to the reference heat treatment at a temperature of about 650 ℃ for 12 minutes.
50. The coated article of any one of claims 35-47, wherein the coated article is configured to have all three of the following measured monolithically: (i) a transmission Δ Ε value of not greater than 3.0 when subjected to a reference heat treatment at a temperature of about 650 ℃ for 12 minutes, (ii) a glass side reflection Δ Ε value of not greater than 1.5 when subjected to the reference heat treatment at a temperature of about 650 ℃ for 12 minutes, and (iii) a film side reflection Δ Ε value of not greater than 1.5 when subjected to the reference heat treatment at a temperature of about 650 ℃ for 12 minutes.
51. A method of making a coated article comprising a coating on a glass substrate, the method comprising:
sputter depositing a layer comprising zinc on the glass substrate;
sputter depositing a first Infrared (IR) reflecting layer comprising silver on the glass substrate, the first IR reflecting layer being over and in contact with the layer comprising zinc oxide;
sputter depositing at least one dielectric layer comprising a monoclinic phase on the glass substrate, wherein the dielectric layer comprising a monoclinic phase comprises zirconium oxide;
wherein the at least one dielectric layer comprising a monoclinic phase and comprising the zirconium oxide is located: (1) at least between the glass substrate and the layer comprising zinc oxide, and/or (2) at least between the first IR reflecting layer comprising silver and the second IR reflecting layer comprising silver of the coating; and is
Wherein the coated article is configured to have at least two of the following measured monolithically: (i) a transmission Δ Ε value of not greater than 3.0 when subjected to a reference heat treatment at a temperature of about 650 ℃ for 12 minutes, (ii) a glass side reflection Δ Ε value of not greater than 3.0 when subjected to the reference heat treatment at a temperature of about 650 ℃ for 12 minutes, and (iii) a film side reflection Δ Ε value of not greater than 3.5 when subjected to the reference heat treatment at a temperature of about 650 ℃ for 12 minutes.
52. The method of claim 49, wherein the sputter depositing the at least one dielectric layer comprising a monoclinic phase on the glass substrate uses an oxygen flow of at least 6 ml/kW.
53. The method of any one of claims 49-50, wherein the sputter depositing the at least one dielectric layer comprising a monoclinic phase on the glass substrate uses an oxygen flow of at least 8 ml/kW.
54. The method of any one of claims 49-51, wherein the at least one dielectric layer comprising a monoclinic phase comprises ZrO2
55. The method of any one of claims 49-52, wherein the coated article is configured to have a monolithic measurement of all three of: (i) a transmission Δ Ε value of not greater than 3.0 when subjected to a reference heat treatment at a temperature of about 650 ℃ for 12 minutes, (ii) a glass side reflection Δ Ε value of not greater than 1.5 when subjected to the reference heat treatment at a temperature of about 650 ℃ for 12 minutes, and (iii) a film side reflection Δ Ε value of not greater than 1.5 when subjected to the reference heat treatment at a temperature of about 650 ℃ for 12 minutes.
56. The method of any one of claims 49-53, further comprising heat treating the coated article via the reference heat treatment such that the at least one dielectric layer comprising a monoclinic crystalline phase achieves at least 0.25g/cm at the time of the reference heat treatment3The density of (a).
57. The method of any one of claims 49-54, wherein the sputter depositing the at least one dielectric layer comprising a monoclinic phase on the glass substrate uses a metal target.
58. The method of any one of claims 49-55, wherein the sputter depositing at least one dielectric layer comprising a monoclinic phase on the glass substrate uses an oxygen flow of at least 6 ml/kW.
59. The method of any one of claims 49-54, wherein the sputter depositing the at least one dielectric layer comprising a monoclinic phase on the glass substrate uses a ceramic target.
60. The method of any one of claims 49-57, wherein the at least one dielectric layer comprising a monoclinic phase further comprises a tetragonal phase.
61. The method of any one of claims 49-58, wherein the at least one dielectric layer comprising a monoclinic phase is configured to have its monoclinic peak reduced upon the reference thermal treatment.
62. A coated article comprising a coating on a glass substrate, wherein the coating comprises:
a layer comprising zinc oxide disposed on the glass substrate;
a first Infrared (IR) reflecting layer comprising silver, the first IR reflecting layer being on the glass substrate and directly over and in contact with the layer comprising zinc oxide;
wherein no silicon nitride based layer is directly beneath and in contact with the layer comprising zinc oxide;
at least one dielectric layer comprising a monoclinic phase and comprising a metal oxide;
wherein the at least one dielectric layer comprising a monoclinic phase and comprising a metal oxide is located: (1) at least between the glass substrate and the layer comprising zinc oxide, and/or (2) at least between the first IR reflecting layer comprising silver and the second IR reflecting layer comprising silver of the coating; and is
Wherein the coated article is configured to have at least two of the following measured monolithically: (i) a transmission Δ Ε value of not greater than 3.0 when subjected to a reference heat treatment at a temperature of about 650 ℃ for 12 minutes, (ii) a glass side reflection Δ Ε value of not greater than 3.0 when subjected to the reference heat treatment at a temperature of about 650 ℃ for 12 minutes, and (iii) a film side reflection Δ Ε value of not greater than 3.5 when subjected to the reference heat treatment at a temperature of about 650 ℃ for 12 minutes.
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