CN114446745B - A Kondin method for adjusting ion etching uniformity - Google Patents
A Kondin method for adjusting ion etching uniformity Download PDFInfo
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- CN114446745B CN114446745B CN202210161610.4A CN202210161610A CN114446745B CN 114446745 B CN114446745 B CN 114446745B CN 202210161610 A CN202210161610 A CN 202210161610A CN 114446745 B CN114446745 B CN 114446745B
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- 238000000992 sputter etching Methods 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title claims description 23
- 238000005530 etching Methods 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 30
- 239000000919 ceramic Substances 0.000 claims description 14
- 238000010586 diagram Methods 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 description 25
- 239000000758 substrate Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses Kong Ding for adjusting ion etching uniformity, which comprises a cap part and a rod part, wherein one end of the rod part is fixedly connected with the cap part, the side surface of the rod part is provided with a notch, the rod part is connected to the position on the cap part deviating from the center of the cap part, the width of the notch is equal to the thickness of a metal sheet of a grid, the rod part is provided with a plurality of notches, the notches are uniformly distributed along the length direction of the rod part, the distance between two adjacent notches is equal to the distance between two adjacent metal sheets of the grid, and the ion etching uniformity adjusting device can be conveniently inserted into holes of the metal sheets on the grid to form a stable structure with the grid so as to conveniently and rapidly adjust the local ion concentration of the ion source grid and rapidly optimize the etching uniformity.
Description
Technical Field
The invention belongs to the technical field of ion sputtering, and particularly relates to Kong Ding and a method for adjusting ion etching uniformity.
Background
The grid ion source generally utilizes a radio frequency power supply to generate argon (Ar) plasma by utilizing Inductive Coupling (ICP), accelerates the Ar plasma by adding metal grids with different voltages and forms plasma beams with high energy which are parallel as far as possible, guides the plasma beams to bombard the surface of the silicon substrate, etches substances on the surface of the silicon substrate to clean the surface of the silicon substrate, or processes and forms various micro-structures and nano-structures on the silicon substrate.
In conventional grid ion sources, the grid is constructed of a structure of several sheets of honeycomb holes. The size and the layout of the holes are adjusted, so that the plasma quantity passing through the holes in different areas can be adjusted to adjust the etching rate in different areas, and on the other hand, the running track of the plasma can be more parallel, and the uniformity of the etching rate can be improved. But there are limitations in using a grid. The ion source generated by Inductive Coupling (ICP) is not uniform in generated plasma density distribution due to the influence of non-uniformity of magnetic field intensity generated by a coil, etching gas diffusion, equipment design, part machining and installation precision and the like, and meanwhile, in the etching process, the RF power supply power, voltage, process gas type, air pressure, flow and the like of the ion source are not completely the same in different processes.
Therefore, in many cases, optimization of process parameters during the debugging of the etching process is not able to fully meet the process performance requirements (typically the uniformity of the etching rate). At this point, the structure of the grid is redesigned, manufactured, and retested. Thus, the process optimization period is long, and the service time and the production capacity of the equipment are seriously reduced.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a method which can be conveniently inserted into holes of a metal sheet on a grid to form a stable structure with the grid so as to conveniently and rapidly adjust the local ion concentration of the ion source grid and rapidly optimize etching uniformity.
In order to achieve the purpose, the invention provides a technical scheme that Kong Ding for adjusting ion etching uniformity comprises a cap part and a rod part, wherein one end of the rod part is fixedly connected with the cap part, and a notch is formed in the side face of the rod part.
Further the stem is attached to the cap at a location offset from the center of the cap.
Further the width of the notch is equal to the thickness of the metal sheet of the grid.
Further the cap is sized to cover the aperture of one grid or the apertures of a plurality of adjacent grids.
Further, the cross section of the cap part is circular.
The rod part is further provided with a plurality of notches which are uniformly distributed along the length direction of the rod part, and the distance between two adjacent notches is equal to the distance between two adjacent metal sheets of the grid mesh.
The cap and the rod are further made of ceramic or quartz.
A method of adjusting ion etch uniformity comprising the steps of:
S1, etching a wafer by adopting an ion source grid mesh to obtain ion etching thickness or rate distribution data, S2, preparing an etching thickness or rate T=f (R/R) graph;
s3, judging whether the requirement of etching uniformity is met or not according to a T=f (R/R) graph;
S4, if the requirement of etching uniformity is met, entering a step S5, if the requirement of etching uniformity is not met, inserting a plurality of hole blocks at the position of the ion source grid corresponding to the position with higher etching thickness according to a T=f (R/R) diagram, and returning to the step S1;
S5, finishing the adjustment.
Compared with the prior art, the invention has the beneficial effects that the metal plate can be conveniently inserted into the holes of the metal plate of the grid mesh, and a stable structure is formed with the holes of the metal plate according to self gravity and geometric shape. Therefore, the local ion concentration of the ion source grid can be conveniently and rapidly adjusted, the etching uniformity is further rapidly optimized, and the equipment use efficiency and the productivity are improved.
Drawings
FIG. 1 is a schematic diagram of a grid explosion;
FIG. 2 is a schematic view of a metal sheet in good memory;
FIG. 3 is a schematic diagram of a first embodiment Kong Ding of the present invention for adjusting ion etch uniformity;
FIG. 4 is a schematic diagram of a second embodiment Kong Ding of the present invention for adjusting ion etching uniformity;
FIG. 5 is a flow chart of a method of adjusting ion etch uniformity in accordance with the present invention;
Fig. 6-9 are specific test cases performed using Kong Ding method for adjusting ion etching uniformity.
The reference numerals are 1, a cap part, 2, a rod part, 21, a notch, 3, a metal sheet, 31, a hole and 4, and isolating ceramics.
Detailed Description
Embodiments of the present invention will be further described with reference to fig. 1 to 9.
In the description of the present invention, it should be noted that, for the azimuth words such as the terms "center", "transverse (X)", "longitudinal (Y)", "vertical (Z)", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc., the azimuth and positional relationships are based on the azimuth or positional relationships shown in the drawings, only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the apparatus or element to be referred to must have a specific azimuth, be constructed and operated in a specific azimuth, and should not be construed as limiting the specific protection scope of the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features. Thus, the definition of "a first", "a second" feature may explicitly or implicitly include one or more of such feature, and in the description of the present invention, the meaning of "a number", "a number" is two or more, unless otherwise specifically defined.
The ion source is mainly composed of a grid mesh, a Radio Frequency (RF) power coil, a quartz cavity, an airflow guiding structure and the like. Wherein,
1. The air flow guiding structure introduces etching gas such as argon and uniformly distributes the etching gas in the vacuum quartz cavity;
2. a Radio Frequency (RF) power supply that provides energy to ionize the gas in the vacuum quartz chamber;
3. the grid is usually composed of 3-5 metal sheets 3 which have the same structure, are mutually insulated and are connected with different voltages. The ion current is accelerated by the grid with different electric fields, and forms approximately parallel plasma beam current with high energy. Typically, the substrate is placed on a substrate table. The substrate table may be rotated to assist in improving etch rate uniformity. The ion beam continuously impacts the substrate to bombard the material on the substrate, thereby forming etching.
As shown in fig. 1, in this embodiment, the grid is formed by three metal sheets 3 (with a thickness d), the metal sheets 3 are typically high temperature resistant metal Mo, ceramic members (with a length t) are provided between the metal sheets 3 to insulate them from each other, and each metal sheet is connected to a different voltage potential.
The metal sheets 3 are provided with densely arranged honeycomb holes 31 in the middle, and the size, arrangement, layout and the like of the metal sheets can be different, and are commonly in a uniform-diameter and area densely arranged structure, as shown in fig. 2.
Ions formed by the grid mesh acceleration of the structure can form approximately parallel plasma beam current with high energy for etching the surface of the wafer.
Embodiment one:
kong Ding for adjusting ion etching uniformity comprises a cap part 1 and a rod part 2, wherein one end of the rod part 2 is fixedly connected with the cap part 1, and a notch 21 is formed in the side face of the rod part 2.
Kong Ding in this embodiment is preferably made of an insulating, high temperature resistant material such as ceramic, quartz, etc.
In order to facilitate the engagement with the grid, the preferred slot 21 has a width d and a height X, and the Kong Dingshang stem 2 has a smaller dimension than the aperture 31 of the sheet metal 3, which facilitates the insertion of Kong Ding into the aperture 31 and provides a firm fixation of Kong Ding to the grid by means of the gravity of Kong Ding and the coupling of the slot 21 to the thickness of the sheet metal 3, thereby reducing the concentration of ions at and around the location.
Wherein the cross section of the shaft portion 2 is preferably circular, i.e. the shaft portion 2 is entirely cylindrical, so long as the radius of the shaft portion 2 is smaller than the radius of the hole 31 of the metal sheet 3.
As shown in fig. 3 and 4, kong Ding is of a non-axisymmetric structure, i.e. the shaft portion 2 is connected to the cap portion 1 at an off-center position, preferably the cross section of the cap portion 1 is circular, i.e. the shaft portion 2 is connected to the cap portion 1 at an off-center position, more preferably the shaft portion 2 is connected to the edge of the cap portion 1, and the radius of the cap portion 1 is R, which is larger than the radius R of the hole 31 of the metal sheet 3, so as to ensure that the corresponding hole 31 can be covered.
Of course, the hat part 1 may have other shapes, such as triangle, quadrangle, irregular shape, etc.
The cap 1 in this embodiment is sized to cover the holes 31 of one grid or the holes 31 of a plurality of adjacent grids.
Embodiment two:
As shown in fig. 4, in this embodiment, the rod 2 has a plurality of slots 21, the plurality of slots 21 are uniformly distributed along the length direction of the rod 2, and the distance between two adjacent slots 21 is equal to the distance between two adjacent metal sheets 3 of the grid, that is, the distance t between two adjacent slots 21 is equal to the length of the isolating ceramic 4 between the metal sheets 3.
Taking the example of a grid with three metal sheets 3, the notches 21 may have three to couple with the three metal sheets 3 at the same time, so that Kong Ding is firmly fixed on the grid, and the other technical features are the same as those of the first embodiment.
As shown in fig. 5, a method for adjusting ion etching uniformity includes the following steps:
S1, etching a wafer by adopting an ion source grid mesh to obtain ion etching thickness or rate distribution data, S2, preparing an etching thickness or rate T=f (R/R) graph;
s3, judging whether the requirement of etching uniformity is met or not according to a T=f (R/R) graph;
S4, if the requirement of etching uniformity is met, entering a step S5, if the requirement of etching uniformity is not met, inserting a plurality of hole blocks at the position of the ion source grid corresponding to the position with higher etching thickness according to a T=f (R/R) diagram, and returning to the step S1;
S5, finishing the adjustment.
Fig. 6-9 are specific test cases performed using the methods described above.
In fig. 6, a is a graph of normalized etch thickness as a function of radial distance from the center of the wafer to the edge of the wafer, i.e., t=f (R/R), without any Kong Ding applied. As can be seen, the etch thickness of the wafer starts to increase at R/r= -0.32, rises to a maximum at R/r= -0.63, and then slowly decreases, with uniformity of the etch thickness being StdD% = 3 17%, as shown in fig. 7. This indicates that starting at R/r= 0.32, the ion concentration of the etch increases rapidly and then decreases gradually.
Based on this, in the ion source grid,
1. About 0.50 radius from the center, insert a piece of ceramic Kong Ding;
2. about 0.63 radius from the center, three pieces of ceramic Kong Ding are inserted;
3. About 0.95 radius from the center, two pieces of ceramic Kong Ding are inserted;
Thus, since the inserted ceramic Kong Dingyou effectively weakens the ion concentration at and around the region and the corresponding etching speed, the etching thickness of the corresponding region is weakened, and the uniformity of the etching thickness is greatly improved, as shown by a curve B in fig. 6. The uniformity of the etching thickness reached StdD% = 1.05%, as shown in fig. 8.
Further, in the ion source grid,
1.2.3.4. A piece of ceramic Kong Ding is inserted at a radius of about 0.50 from the center;
5. A piece of ceramic Kong Ding is inserted at a radius of about 0.63 from the center;
6. A piece of ceramic Kong Ding is inserted at a radius of about 0.95 from the center;
Thus, since the inserted ceramic Kong Dingyou effectively weakens the ion concentration at and around the region and the corresponding etching speed, the etching thickness of the corresponding region is weakened, and the uniformity of the etching thickness is greatly improved, as shown by a curve C in fig. 6. The uniformity of the etching thickness reaches StdD% = 0.20%, as shown in fig. 9.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above examples, and all technical solutions belonging to the concept of the present invention belong to the protection scope of the present invention. It should be noted that modifications and adaptations to the present invention may occur to one skilled in the art without departing from the principles of the present invention and are intended to be within the scope of the present invention.
Claims (7)
1. The Kong Ding for adjusting the uniformity of ion etching is characterized by comprising a cap part and a rod part, wherein one end of the rod part is fixedly connected with the cap part, and a notch is formed in the side surface of the rod part;
The method for adjusting the uniformity of ion etching by using the holes Ding Lai is characterized by comprising the following steps:
S1, etching a wafer by adopting an ion source grid mesh to obtain ion etching thickness or rate distribution data;
s2, preparing an etching thickness or rate T=f (R/R) graph;
s3, judging whether the requirement of etching uniformity is met or not according to a T=f (R/R) graph;
S4, if the requirement of etching uniformity is met, entering a step S5, if the requirement of etching uniformity is not met, inserting a plurality of hole blocks at the position of the ion source grid corresponding to the position with higher etching thickness according to a T=f (R/R) diagram, and returning to the step S1;
S5, finishing the adjustment.
2. A method for adjusting ion etch uniformity as set forth in claim 1 wherein the stem is attached to the cap at a location offset from the center of the cap.
3. A method for adjusting ion etch uniformity according to claim 2 wherein said width of said notch is equal to the thickness of the sheet metal of the grid.
4. A method for adjusting ion etch uniformity as set forth in claim 3 wherein said cap is sized to cover the holes of one grid or the holes of a plurality of adjacent grids.
5. A method for adjusting ion etching uniformity as set forth in claim 4 wherein said cap portion is circular in cross-section.
6. The method of claim 1-5, wherein the rod has a plurality of slots uniformly distributed along the length of the rod, and the distance between two adjacent slots is equal to the distance between two adjacent metal sheets of the grid.
7. The method of claim 6, wherein the cap and stem are made of ceramic or quartz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210161610.4A CN114446745B (en) | 2022-02-22 | 2022-02-22 | A Kondin method for adjusting ion etching uniformity |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210161610.4A CN114446745B (en) | 2022-02-22 | 2022-02-22 | A Kondin method for adjusting ion etching uniformity |
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| CN114446745A CN114446745A (en) | 2022-05-06 |
| CN114446745B true CN114446745B (en) | 2025-02-14 |
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| CN117558606B (en) * | 2023-04-21 | 2025-09-09 | 天津吉兆源科技有限公司 | Method for adjusting uniformity of ion source |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105575748A (en) * | 2015-12-11 | 2016-05-11 | 中国电子科技集团公司第四十八研究所 | Method for improving uniformity of ion beams of large-parameter ion source |
| CN113571980A (en) * | 2021-08-06 | 2021-10-29 | 杨福流 | A mounting hole, a hole cap and a socket using the mounting hole and the hole cap |
| CN217361495U (en) * | 2022-02-22 | 2022-09-02 | 浙江艾微普科技有限公司 | Hole block for adjusting ion etching uniformity |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7863587B2 (en) * | 2007-01-31 | 2011-01-04 | Hitachi Global Storage Technologies, Netherlands, B.V. | Symmetrical shaper for an ion beam deposition and etching apparatus |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105575748A (en) * | 2015-12-11 | 2016-05-11 | 中国电子科技集团公司第四十八研究所 | Method for improving uniformity of ion beams of large-parameter ion source |
| CN113571980A (en) * | 2021-08-06 | 2021-10-29 | 杨福流 | A mounting hole, a hole cap and a socket using the mounting hole and the hole cap |
| CN217361495U (en) * | 2022-02-22 | 2022-09-02 | 浙江艾微普科技有限公司 | Hole block for adjusting ion etching uniformity |
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