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CN114448369A - Amplifying circuits, related chips and electronic devices - Google Patents

Amplifying circuits, related chips and electronic devices Download PDF

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Publication number
CN114448369A
CN114448369A CN202111597731.5A CN202111597731A CN114448369A CN 114448369 A CN114448369 A CN 114448369A CN 202111597731 A CN202111597731 A CN 202111597731A CN 114448369 A CN114448369 A CN 114448369A
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current
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李钰莹
陈雨田
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Shenzhen Goodix Technology Co Ltd
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Shenzhen Goodix Technology Co Ltd
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
    • H03F3/4517Complementary non-cross coupled types
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/14Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of neutralising means
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
    • H03F3/45174Mirror types
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45126One or both transistors of the folded cascode stage of a folded cascode dif amp are composed of more than one transistor

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

The application discloses an amplifying circuit, a related chip and an electronic device. The amplifying circuit comprises a current balancing unit, a biasing unit, an output unit, a P-type transistor differential amplifying unit, an N-type transistor replica differential input unit, a P-type transistor replica differential input unit and an N-type transistor differential amplifying unit, wherein the P-type transistor differential amplifying unit, the N-type transistor replica differential input unit and the N-type transistor differential amplifying unit respectively receive a first input voltage signal and a second input voltage signal. The current balancing unit balances currents generated by the P-type transistor differential amplification unit and the N-type transistor differential amplification unit. The bias unit outputs a first bias current to the P-type transistor differential amplifier unit and the N-type transistor replica differential input unit together, and provides a second bias current to the P-type transistor replica differential input unit and the N-type transistor differential amplifier unit together. The output unit generates output end current according to a plurality of current signals generated by the P-type transistor differential amplification unit and the N-type transistor differential amplification unit.

Description

放大电路、相关芯片及电子装置Amplifying circuits, related chips and electronic devices

技术领域technical field

本申请涉及一种放大电路,特别是涉及一种输出端电流稳定的放大电路。The present application relates to an amplifier circuit, in particular to an amplifier circuit with stable output terminal current.

背景技术Background technique

由于锁相环所产生的时钟信号具有低噪声高稳定性的优点,因此在各类芯片中用途广泛,并逐渐往低功耗和高集成度的方向发展。在电荷泵锁相环中,电荷泵的性能对抑制锁相环的参考杂散起到重要作用。在现有技术中,为了减小电荷泵中因为寄生电容的充放电作用和电荷泵输出端的电压抖动所造成的电流失配,常会利用放大器来进行反馈,以对电荷泵的输出端进行钳位,从而增强电荷泵的电流匹配精确性。Because the clock signal generated by the phase-locked loop has the advantages of low noise and high stability, it is widely used in various chips, and gradually develops in the direction of low power consumption and high integration. In the charge pump phase-locked loop, the performance of the charge pump plays an important role in suppressing the reference spur of the phase-locked loop. In the prior art, in order to reduce the current mismatch caused by the charging and discharging of the parasitic capacitance and the voltage jitter at the output end of the charge pump in the charge pump, an amplifier is often used for feedback to clamp the output end of the charge pump. , thereby enhancing the current matching accuracy of the charge pump.

由于电荷泵需要较小的静态电流和快速的开关速度,因此对于用以提供反馈的放大器也有较高的要求,例如放大器需具有较大的共模输入范围、较高的驱动能力、较低的功耗及较大带宽等特性,以抑制放大器对电荷泵的工作点产生的影响。也就是说,如何使提供适当的放大器以减少对电荷泵工作点的影响,就成为了有待解决的问题。Since the charge pump requires small quiescent current and fast switching speed, there are also higher requirements for the amplifier used to provide feedback, such as the amplifier needs to have a larger common-mode input range, higher drive capability, lower characteristics such as power consumption and large bandwidth to suppress the impact of the amplifier on the operating point of the charge pump. That is to say, how to provide an appropriate amplifier to reduce the influence on the operating point of the charge pump has become a problem to be solved.

发明内容SUMMARY OF THE INVENTION

本申请的目的之一在于公开一种放大电路、相关芯片及电子装置,来解决上述问题。One of the objectives of the present application is to disclose an amplifier circuit, a related chip and an electronic device to solve the above problems.

本申请的一实施例提供一种放大电路。放大电路包括P型晶体管差分放大单元、N型晶体管复制差分输入单元、P型晶体管复制差分输入单元、N型晶体管差分放大单元、电流平衡单元、偏置单元及输出单元。所述P型晶体管差分放大单元用以接收第一输入电压信号及第二输入电压信号。所述N型晶体管复制差分输入单元用以接收所述第一输入电压信号及所述第二输入电压信号。所述P型晶体管复制差分输入单元用以接收所述第一输入电压信号及所述第二输入电压信号。所述N型晶体管差分放大单元用以接收所述第一输入电压信号及所述第二输入电压信号。所述电流平衡单元用以平衡所述P型晶体管差分放大单元及所述N型晶体管差分放大单元所产生的电流。所述偏置单元用以对所述P型晶体管差分放大单元及所述N型晶体管复制差分输入单元共同提供第一偏置电流,及对所述P型晶体管复制差分输入单元及所述N型晶体管差分放大单元共同提供第二偏置电流。所述输出单元用以依据所述P型晶体管差分放大单元及所述N型晶体管差分放大单元所产生的多个电流信号产生输出端电流。An embodiment of the present application provides an amplifying circuit. The amplifying circuit includes a P-type transistor differential amplifying unit, an N-type transistor replica differential input unit, a P-type transistor replica differential input unit, an N-type transistor differential amplifying unit, a current balance unit, a bias unit and an output unit. The P-type transistor differential amplifying unit is used for receiving a first input voltage signal and a second input voltage signal. The N-type transistor replicates the differential input unit for receiving the first input voltage signal and the second input voltage signal. The P-type transistor replicates the differential input unit for receiving the first input voltage signal and the second input voltage signal. The N-type transistor differential amplifying unit is used for receiving the first input voltage signal and the second input voltage signal. The current balancing unit is used for balancing the currents generated by the P-type transistor differential amplifying unit and the N-type transistor differential amplifying unit. The bias unit is used for jointly providing a first bias current to the P-type transistor differential amplifying unit and the N-type transistor replica differential input unit, and replicating the P-type transistor differential input unit and the N-type transistor The transistor differential amplifying units jointly provide a second bias current. The output unit is used for generating an output current according to a plurality of current signals generated by the P-type transistor differential amplifying unit and the N-type transistor differential amplifying unit.

所述第一偏置电流的电流值与所述第二偏置电流的电流值相同。当所述第一输入电压信号及所述第二输入电压信号的共模电压产生变化时,所述P型晶体管差分放大单元及所述P型晶体管复制差分输入单元所对应产生的电流变化与所述N型晶体管复制差分输入单元及所述N型晶体管差分放大单元所对应产生的电流变化具有相同的变化量及相反的变化方向,使得所述输出单元所产生的所述输出端电流保持稳定。The current value of the first bias current is the same as the current value of the second bias current. When the common-mode voltages of the first input voltage signal and the second input voltage signal change, the current change corresponding to the P-type transistor differential amplifying unit and the P-type transistor replica differential input unit is the same as the corresponding current change. The current variation corresponding to the N-type transistor replica differential input unit and the N-type transistor differential amplifying unit has the same variation amount and opposite variation direction, so that the output current generated by the output unit remains stable.

本申请的另一实施例提供一种芯片,包括放大电路和电源电路,电源电路与放大电路连接,电源电路为放大电路供电,例如,为放大电路提供稳定的电源电压VDD。Another embodiment of the present application provides a chip including an amplification circuit and a power supply circuit, the power supply circuit is connected to the amplification circuit, and the power supply circuit supplies power to the amplification circuit, for example, provides a stable power supply voltage VDD for the amplification circuit.

本申请的另一实施例提供一种电子装置,包括所述芯片和外壳,芯片设置于外壳内部。Another embodiment of the present application provides an electronic device, including the chip and a housing, where the chip is disposed inside the housing.

本申请的实施例所提供的放大电路、相关芯片及电子装置可以利利用互补的单级输入共源放大器组来提供增益,并通过与共源放大器并联的电流分支电路及电流平衡单元来平衡共源放大器组的电流,因此可保持输出端电流稳定不变,从而减少对电荷泵的工作点的影响。The amplifying circuit, related chip and electronic device provided by the embodiments of the present application can utilize complementary single-stage input common-source amplifier groups to provide gain, and balance the common-source through a current branch circuit and a current balancing unit connected in parallel with the common-source amplifiers The current of the amplifier group, so the output current can be kept stable, thereby reducing the impact on the operating point of the charge pump.

附图说明Description of drawings

图1是本申请一实施例的放大电路的示意图。FIG. 1 is a schematic diagram of an amplifying circuit according to an embodiment of the present application.

图2是图1的放大电路的电路图。FIG. 2 is a circuit diagram of the amplifier circuit of FIG. 1 .

图3是第一输入电压信号及第二输入电压信号的共模电压为电源电压的一半时,图1的放大电路的电流示意图。FIG. 3 is a schematic diagram of the current of the amplifier circuit of FIG. 1 when the common mode voltage of the first input voltage signal and the second input voltage signal is half of the power supply voltage.

图4是第一输入电压信号及第二输入电压信号的共模电压为电源电压时,图1的放大电路的电流示意图。FIG. 4 is a schematic diagram of the current of the amplifier circuit of FIG. 1 when the common mode voltage of the first input voltage signal and the second input voltage signal is the power supply voltage.

图5是本申请另一实施例的放大电路的示意图。FIG. 5 is a schematic diagram of an amplifying circuit according to another embodiment of the present application.

图6是本申请一实施例的P型晶体管差分放大单元的电路图。FIG. 6 is a circuit diagram of a P-type transistor differential amplifying unit according to an embodiment of the present application.

图7是本申请一实施例的N型晶体管复制差分输入单元的电路图。FIG. 7 is a circuit diagram of an N-type transistor replica differential input unit according to an embodiment of the present application.

具体实施方式Detailed ways

以下揭示内容提供了多种实施方式或例示,其能用以实现本揭示内容的不同特征。下文所述之组件与配置的具体例子系用以简化本揭示内容。当可想见,这些叙述仅为例示,其本意并非用于限制本揭示内容。举例来说,在下文的描述中,将一第一特征形成于一第二特征上或之上,可能包括某些实施例其中所述的第一与第二特征彼此直接接触;且也可能包括某些实施例其中还有额外的组件形成于上述第一与第二特征之间,而使得第一与第二特征可能没有直接接触。此外,本揭示内容可能会在多个实施例中重复使用组件符号和/或标号。此种重复使用乃是基于简洁与清楚的目的,且其本身不代表所讨论的不同实施例和/或组态之间的关系。The following disclosure provides various implementations, or illustrations, that can be used to implement various features of the present disclosure. Specific examples of components and configurations are described below to simplify the present disclosure. As can be appreciated, these descriptions are exemplary only, and are not intended to limit the present disclosure. For example, in the description below, forming a first feature on or over a second feature may include some embodiments in which the first and second features are in direct contact with each other; and may also include Certain embodiments may have additional components formed between the first and second features described above, such that the first and second features may not be in direct contact. Furthermore, the present disclosure may reuse reference numerals and/or reference numerals in various embodiments. Such reuse is for brevity and clarity, and does not in itself represent a relationship between the different embodiments and/or configurations discussed.

虽然用以界定本申请较广范围的数值范围与参数皆是约略的数值,此处已尽可能精确地呈现具体实施例中的相关数值。然而,任何数值本质上不可避免地含有因个别测试方法所致的标准偏差。在此处,「约」通常系指实际数值在一特定数值或范围的正负10%、5%、1%或0.5%之内。或者是,「约」一词代表实际数值落在平均值的可接受标准误差之内,视本申请所属技术领域中具有通常知识者的考虑而定。当可理解,除了实验例之外,或除非另有明确的说明,此处所用的所有范围、数量、数值与百分比(例如用以描述材料用量、时间长短、温度、操作条件、数量比例及其他相似者)均经过「约」的修饰。因此,除非另有相反的说明,本说明书与附随申请专利范围所揭示的数值参数皆为约略的数值,且可视需求而更动。至少应将这些数值参数理解为所指出的有效位数与套用一般进位法所得到的数值。在此处,将数值范围表示成由一端点至另一端点或介于二端点之间;除非另有说明,此处所述的数值范围皆包括端点。Notwithstanding that the numerical ranges and parameters setting forth the broader scope of the application are approximations, the numerical values set forth in the specific examples have been reported as precisely as possible. Any numerical value, however, inherently contains the standard deviation resulting from individual testing methods. As used herein, "about" generally means within plus or minus 10%, 5%, 1%, or 0.5% of the actual value of a particular value or range. Alternatively, the word "about" means that the actual value lies within an acceptable standard error of the mean, as considered by one of ordinary skill in the art to which this application pertains. It should be understood that all ranges, quantities, numerical values and percentages used herein (for example, to describe material amounts, time durations, temperatures, operating conditions, quantity ratios and other similar) are modified by "about". Therefore, unless otherwise stated to the contrary, the numerical parameters disclosed in this specification and the accompanying claims are approximate numerical values and may be changed as required. At a minimum, these numerical parameters should be construed to mean the number of significant digits indicated and the numerical values obtained by applying ordinary rounding. Numerical ranges are expressed herein as from one endpoint to the other or between the endpoints; unless otherwise indicated, the numerical ranges recited herein are inclusive of the endpoints.

图1是本申请一实施例的放大电路100的示意图。放大电路100包括偏置单元110、P型晶体管差分放大单元120、N型晶体管复制差分输入单元130、P型晶体管复制差分输入单元140、N型晶体管差分放大单元150、电流平衡单元160及输出单元170。在本实施例中,放大电路100可以设计成芯片,并可依系统需求设置在电子装置中。FIG. 1 is a schematic diagram of an amplifying circuit 100 according to an embodiment of the present application. The amplifier circuit 100 includes a bias unit 110 , a P-type transistor differential amplifying unit 120 , an N-type transistor replica differential input unit 130 , a P-type transistor replica differential input unit 140 , an N-type transistor differential amplifying unit 150 , a current balance unit 160 and an output unit 170. In this embodiment, the amplifying circuit 100 can be designed as a chip, and can be arranged in an electronic device according to system requirements.

在有些实施例中,为了使放大器能够提供较小的电流消耗及较大的带宽,会使用单级的共源放大器,然而单级共源放大器的输出端电流容易受到负载影响,例如当负载较大时,就可能导致单级共源放大器关闭,而无法正常运作。为解决此问题,在本实施例中,放大电路100可使用单一级输入级共源放大器来提供增益,并通过复制对管来添加电流分支,使得放大电路100能够提供较为稳定的输出端电流。举例来说,在本实施例中,P型晶体管差分放大单元120及N型晶体管差分放大单元150是互补的输入级共源放大器,而P型晶体管复制差分输入单元140及N型晶体管复制差分输入单元130则是与所述输入级共源放大器并联的电流分支电路,且P型晶体管复制差分输入单元140可使用与P型晶体管差分放大单元120同类型且同宽长比的晶体管,N型晶体管复制差分输入单元130可使用与N型晶体管差分放大单元150同类型且同宽长比的晶体管,因此N型晶体管复制差分输入单元130可产生与P型晶体管差分放大单元120相对应且互补的电流变化,而P型晶体管复制差分输入单元140可产生与N型晶体管差分放大单元150相对应且互补的电流变化。如此一来,放大电路100即可具有电流消耗较少且频带较宽的优点。再者,由于P型晶体管复制差分输入单元140及N型晶体管复制差分输入单元130所提供电流分支的能够对P型晶体管差分放大单元120及N型晶体管差分放大单元150所产生的电流进行补偿及平衡,因此放大电路100的输出端电流能够维持在较稳定的状态,且不会影响到输入对管,例如P型晶体管差分放大单元120及N型晶体管差分放大单元150的工作状态。In some embodiments, in order to enable the amplifier to provide smaller current consumption and larger bandwidth, a single-stage common-source amplifier is used. However, the output current of the single-stage common-source amplifier is easily affected by the load, for example, when the load is relatively heavy When it is large, it may cause the single-stage common source amplifier to turn off and not work properly. To solve this problem, in this embodiment, the amplifying circuit 100 can use a single-stage input-stage common-source amplifier to provide gain, and add a current branch by duplicating a pair of tubes, so that the amplifying circuit 100 can provide a relatively stable output current. For example, in the present embodiment, the P-type transistor differential amplifying unit 120 and the N-type transistor differential amplifying unit 150 are complementary input stage common-source amplifiers, and the P-type transistor replicates the differential input unit 140 and the N-type transistor replicates the differential input The unit 130 is a current branch circuit connected in parallel with the input stage common source amplifier, and the P-type transistor replica differential input unit 140 can use transistors of the same type and the same aspect ratio as the P-type transistor differential amplifying unit 120, and N-type transistors The replica differential input unit 130 can use transistors of the same type and the same aspect ratio as the N-type transistor differential amplifying unit 150 , so the N-type transistor replica differential input unit 130 can generate a current corresponding to and complementary to the P-type transistor differential amplifying unit 120 While the P-type transistor replicates the differential input unit 140 to generate a corresponding and complementary current change to the N-type transistor differential amplifying unit 150 . In this way, the amplifying circuit 100 can have the advantages of less current consumption and wider frequency band. Furthermore, since the current branch provided by the P-type transistor replica differential input unit 140 and the N-type transistor replica differential input unit 130 can compensate the current generated by the P-type transistor differential amplifying unit 120 and the N-type transistor differential amplifying unit 150 , and Therefore, the output current of the amplifying circuit 100 can be maintained in a relatively stable state without affecting the working state of the input pair transistors, such as the P-type transistor differential amplifying unit 120 and the N-type transistor differential amplifying unit 150 .

在本实施例中,P型晶体管差分放大单元120、N型晶体管复制差分输入单元130、P型晶体管复制差分输入单元140、N型晶体管差分放大单元150各自可接收第一输入电压信号VP及第二输入电压信号VN,并可各自将第一输入电压信号VP及第二输入电压信号VN转导为放大电流。此外,在P型晶体管差分放大单元120及N型晶体管差分放大单元150中,除具有输入对晶体管外,还具有提供增益所需的负载对管。然而,由于N型晶体管复制差分输入单元130及P型晶体管复制差分输入单元140的主要功能仅是用来复制分支电流,因此可仅包含输入对晶体管,而可将负载对管省略。有关P型晶体管差分放大单元120、N型晶体管复制差分输入单元130、P型晶体管复制差分输入单元140及N型晶体管差分放大单元150的具体电路结构将在后面的段落中详细说明。In this embodiment, the P-type transistor differential amplifying unit 120 , the N-type transistor replica differential input unit 130 , the P-type transistor replica differential input unit 140 , and the N-type transistor differential amplifying unit 150 can each receive the first input voltage signal VP and the second The two input voltage signals VN can respectively conduct the first input voltage signal VP and the second input voltage signal VN into an amplified current. In addition, the P-type transistor differential amplifying unit 120 and the N-type transistor differential amplifying unit 150 not only have the input pair of transistors, but also have the load pair of transistors required to provide gain. However, since the main function of the N-type transistor replica differential input unit 130 and the P-type transistor replica differential input unit 140 is to replicate the branch current, only the input pair transistors can be included, and the load pair transistors can be omitted. The specific circuit structures of the P-type transistor differential amplifying unit 120 , the N-type transistor replica differential input unit 130 , the P-type transistor replica differential input unit 140 and the N-type transistor differential amplifying unit 150 will be described in detail in the following paragraphs.

偏置单元110可以提供P型晶体管差分放大单元120、N型晶体管复制差分输入单元130、P型晶体管复制差分输入单元140、N型晶体管差分放大单元150所需的偏置电流。举例来说,偏置单元110可提供第一偏置电流IB1及第二偏置电流IB2,其中第一偏置电流IB1是流入P型晶体管差分放大单元120及N型晶体管复制差分输入单元130的总电流,而第二偏置电流IB2是自P型晶体管复制差分输入单元140及N型晶体管差分放大单元150流出的总电流。在本实施例中,第一偏置电流IB1的电流值与第二偏置电流IB2可具有相同的电流值。The bias unit 110 may provide bias currents required by the P-type transistor differential amplifying unit 120 , the N-type transistor replica differential input unit 130 , the P-type transistor replica differential input unit 140 , and the N-type transistor differential amplifying unit 150 . For example, the bias unit 110 can provide a first bias current IB1 and a second bias current IB2, wherein the first bias current IB1 flows into the P-type transistor differential amplifying unit 120 and the N-type transistor replica differential input unit 130 The second bias current IB2 is the total current flowing from the P-type transistor replica differential input unit 140 and the N-type transistor differential amplifying unit 150 . In this embodiment, the current value of the first bias current IB1 and the current value of the second bias current IB2 may have the same current value.

电流平衡单元160可以平衡P型晶体管差分放大单元120及N型晶体管差分放大单元150所产生的电流,而输出单元170可以依据电流平衡单元160综合后的电流信号产生稳定的输出端电流,因此在通过放大电路100的输出端OUT提供输出电压时,不容易因为负载电流过大而导致放大电路100被关闭。The current balancing unit 160 can balance the currents generated by the P-type transistor differential amplifying unit 120 and the N-type transistor differential amplifying unit 150 , and the output unit 170 can generate a stable output current according to the current signal synthesized by the current balancing unit 160 . When the output voltage is provided through the output terminal OUT of the amplifying circuit 100 , it is not easy for the amplifying circuit 100 to be turned off due to excessive load current.

如同前述,在本实施例中,P型晶体管差分放大单元120及N型晶体管差分放大单元150是为互补的共源放大器组,而N型晶体管复制差分输入单元130及P型晶体管复制差分输入单元140则是分别与P型晶体管差分放大单元120及N型晶体管差分放大单元150相并联的电流分支电路。在此情况下,当第一输入电压信号VP及第二输入电压信号VN的共模电压产生变化时,P型晶体管差分放大单元120及P型晶体管复制差分输入单元140所对应产生的电流变化会与N型晶体管复制差分输入单元130及N型晶体管差分放大单元150所对应产生的电流变化具有相同的变化量及相反的变化方向,且电流平衡单元160可进一步平衡P型晶体管差分放大单元120及N型晶体管差分放大单元150所产生的电流,使得输出单元170所产生的输出端电流可以保持稳定,而不会随着共模电压的改变而改变。此外,由于放大电路100可不额外使用的反馈电路,因此所需的面积较小,带宽较大,而功耗也较低。在有些实施例中,放大电路100可以应用在锁相环中,并用以提供电荷泵所需的反馈。As mentioned above, in the present embodiment, the P-type transistor differential amplifying unit 120 and the N-type transistor differential amplifying unit 150 are complementary common-source amplifier groups, and the N-type transistor duplicates the differential input unit 130 and the P-type transistor duplicates the differential input unit 140 is a current branch circuit connected in parallel with the P-type transistor differential amplifying unit 120 and the N-type transistor differential amplifying unit 150 respectively. In this case, when the common-mode voltages of the first input voltage signal VP and the second input voltage signal VN change, the current changes corresponding to the P-type transistor differential amplifying unit 120 and the P-type transistor replica differential input unit 140 will change. The current variation corresponding to the N-type transistor replica differential input unit 130 and the N-type transistor differential amplifying unit 150 has the same variation amount and opposite variation direction, and the current balancing unit 160 can further balance the P-type transistor differential amplifying unit 120 and the N-type transistor differential amplifying unit 150. The current generated by the N-type transistor differential amplifying unit 150 enables the output current generated by the output unit 170 to remain stable without changing with the change of the common mode voltage. In addition, since the amplifying circuit 100 may not use an additional feedback circuit, the required area is small, the bandwidth is large, and the power consumption is also low. In some embodiments, the amplifier circuit 100 can be used in a phase locked loop to provide feedback required by the charge pump.

图2是放大电路100的电路图。在图2中,偏置单元110可包括第一电流镜112、第二电流镜114及第三电流镜116。第一电流镜112可依据接收参考电流IB0产生第一复制电流IP1。第二电流镜114可包括多个P型晶体管,并可依据第一复制电流IP1产生第一偏置电流IB1。第三电流镜116可包括多个N型晶体管,并可依据第一复制电流IP1产生第二偏置电流IB2。FIG. 2 is a circuit diagram of the amplifier circuit 100 . In FIG. 2 , the bias unit 110 may include a first current mirror 112 , a second current mirror 114 and a third current mirror 116 . The first current mirror 112 can generate the first replica current IP1 according to the received reference current IB0. The second current mirror 114 may include a plurality of P-type transistors, and may generate the first bias current IB1 according to the first replica current IP1. The third current mirror 116 may include a plurality of N-type transistors, and may generate a second bias current IB2 according to the first replica current IP1.

举例来说,第一电流镜112可以包括第一N型晶体管MN1及第二N型晶体管MN2,第二电流镜可以包括第一P型晶体管MP1、第二P型晶体管MP2及第三P型晶体管MP3,而第三电流镜116可以包括第三N型晶体管MN3及第四N型晶体管MN4。For example, the first current mirror 112 may include a first N-type transistor MN1 and a second N-type transistor MN2, and the second current mirror may include a first P-type transistor MP1, a second P-type transistor MP2 and a third P-type transistor MP3, and the third current mirror 116 may include a third N-type transistor MN3 and a fourth N-type transistor MN4.

第一N型晶体管MN1具有第一端、第二端及控制端,第一N型晶体管MN1的第一端可接收参考电流IB0,第一N型晶体管MN1的第二端耦接于地电压GND,及第一N型晶体管MN1的控制端耦接于第一N型晶体管MN1的第一端。在本实施例中,参考电流IB0可由电流源CS1提供。第二N型晶体管MN2具有第一端、第二端及控制端,第二N型晶体管MN2的第二端耦接于地电压GND,而第二N型晶体管MN2的控制端耦接于第一N型晶体管MN1的控制端。The first N-type transistor MN1 has a first terminal, a second terminal and a control terminal, the first terminal of the first N-type transistor MN1 can receive the reference current IB0, and the second terminal of the first N-type transistor MN1 is coupled to the ground voltage GND , and the control terminal of the first N-type transistor MN1 is coupled to the first terminal of the first N-type transistor MN1. In this embodiment, the reference current IB0 can be provided by the current source CS1. The second N-type transistor MN2 has a first terminal, a second terminal and a control terminal, the second terminal of the second N-type transistor MN2 is coupled to the ground voltage GND, and the control terminal of the second N-type transistor MN2 is coupled to the first terminal The control terminal of the N-type transistor MN1.

第一P型晶体管MP1具有第一端、第二端及控制端,第一P型晶体管MP1的第一端耦接于电源电压VDD,第一P型晶体管MP1的第二端耦接于第二N型晶体管MN2的第一端,及第一P型晶体管MP1的控制端耦接于第一P型晶体管MP1的第二端。第二P型晶体管MP2具有第一端、第二端及控制端,第二P型晶体管MP2的第一端耦接于电源电压VDD,而第二P型晶体管MP2的控制端耦接于第一P型晶体管MP1的控制端。第三N型晶体管MN3,具有第一端、第二端及控制端,第三N型晶体管MN3的第一端耦接于第二P型晶体管MP2的第二端,第三N型晶体管MN3的第二端耦接于地电压GND,而第三N型晶体管MN3的控制端耦接于第三N型晶体管MN3的第一端。The first P-type transistor MP1 has a first terminal, a second terminal and a control terminal. The first terminal of the first P-type transistor MP1 is coupled to the power supply voltage VDD, and the second terminal of the first P-type transistor MP1 is coupled to the second terminal. The first terminal of the N-type transistor MN2 and the control terminal of the first P-type transistor MP1 are coupled to the second terminal of the first P-type transistor MP1. The second P-type transistor MP2 has a first terminal, a second terminal and a control terminal, the first terminal of the second P-type transistor MP2 is coupled to the power supply voltage VDD, and the control terminal of the second P-type transistor MP2 is coupled to the first terminal The control terminal of the P-type transistor MP1. The third N-type transistor MN3 has a first terminal, a second terminal and a control terminal. The first terminal of the third N-type transistor MN3 is coupled to the second terminal of the second P-type transistor MP2. The second terminal is coupled to the ground voltage GND, and the control terminal of the third N-type transistor MN3 is coupled to the first terminal of the third N-type transistor MN3.

在本实施例中,在第一电流镜112中,第二N型晶体管MN2可复制第一N型晶体管MN1所接收的参考电流IB0以产生第一复制电流IP1,而在第二电流镜114中,第二P型晶体管MP2则可复制流经第一P型晶体管MP1的电流IP1,且由于第三N型晶体管MN3与第二P型晶体管MP2串接,因此第三N型晶体管MN3与第二P型晶体管MP2将流经相同的电流,例如同样与电流IP1相等的电流,并可分别用以提供第三P型晶体管MP3及第四N型晶体管MN4所需的偏置电压VB1及VB2。如图2所示,第三P型晶体管MP3具有第一端、第二端及控制端,第三P型晶体管MP3的第一端耦接于电源电压VDD,第三P型晶体管MP3的第二端可提供第一偏置电流IB1,而第三P型晶体管MP3的控制端耦接于第二P型晶体管MP2的控制端以接收偏置电压VB1。也就是说,在第二电流镜114中,第三P型晶体管MP3与第二P型晶体管MP2的控制端可接收到相同的电压,因此第三P型晶体管MP3与第二P型晶体管MP2同样可以复制流经第一P型晶体管MP1的电流从而产生第一偏置电流IB1。In this embodiment, in the first current mirror 112 , the second N-type transistor MN2 can replicate the reference current IB0 received by the first N-type transistor MN1 to generate the first replicated current IP1 , while in the second current mirror 114 , the second P-type transistor MP2 can copy the current IP1 flowing through the first P-type transistor MP1, and since the third N-type transistor MN3 and the second P-type transistor MP2 are connected in series, the third N-type transistor MN3 and the second The P-type transistor MP2 will flow the same current, eg, the same current as the current IP1, and can be used to provide the bias voltages VB1 and VB2 required by the third P-type transistor MP3 and the fourth N-type transistor MN4, respectively. As shown in FIG. 2 , the third P-type transistor MP3 has a first terminal, a second terminal and a control terminal, the first terminal of the third P-type transistor MP3 is coupled to the power supply voltage VDD, and the second terminal of the third P-type transistor MP3 The terminal can provide the first bias current IB1, and the control terminal of the third P-type transistor MP3 is coupled to the control terminal of the second P-type transistor MP2 to receive the bias voltage VB1. That is to say, in the second current mirror 114, the control terminals of the third P-type transistor MP3 and the second P-type transistor MP2 can receive the same voltage, so the third P-type transistor MP3 and the second P-type transistor MP2 are the same The current flowing through the first P-type transistor MP1 can be replicated to generate the first bias current IB1.

第四N型晶体管MN4具有第一端、第二端及控制端,第四N型晶体管MN4的第一端可提供第二偏置电流IB2,第四N型晶体管MN4的第二端耦接于地电压GND,而第四N型晶体管MN4的控制端耦接于第三N型晶体管MN3的控制端以接收偏置电压VB2。也就是说,在第三电流镜116中,第四N型晶体管MN4与第三N型晶体管MN3的控制端可接收到相同的电压,因此第四N型晶体管MN4可以复制流经第三N型晶体管MN3的电流从而产生第二偏置电流IB2。The fourth N-type transistor MN4 has a first terminal, a second terminal and a control terminal, the first terminal of the fourth N-type transistor MN4 can provide the second bias current IB2, and the second terminal of the fourth N-type transistor MN4 is coupled to The ground voltage GND, and the control terminal of the fourth N-type transistor MN4 is coupled to the control terminal of the third N-type transistor MN3 to receive the bias voltage VB2. That is to say, in the third current mirror 116, the control terminals of the fourth N-type transistor MN4 and the third N-type transistor MN3 can receive the same voltage, so the fourth N-type transistor MN4 can replicate the flow through the third N-type transistor MN4. The current of the transistor MN3 thus generates the second bias current IB2.

此外,P型晶体管差分放大单元120可包括第四P型晶体管MP4、第五P型晶体管MP5、第六N型晶体管MN6及第七N型晶体管MN7,其中第四P型晶体管MP及第五P型晶体管MP5可分别接收第一输入电压信号VP及第二输入电压信号VN,并依据第一输入电压信号VP及第二输入电压信号VN产生转导放大电流至第六N型晶体管MN6及第七N型晶体管MN7。In addition, the P-type transistor differential amplifying unit 120 may include a fourth P-type transistor MP4, a fifth P-type transistor MP5, a sixth N-type transistor MN6 and a seventh N-type transistor MN7, wherein the fourth P-type transistor MP and the fifth P-type transistor MP5 The N-type transistor MP5 can receive the first input voltage signal VP and the second input voltage signal VN respectively, and according to the first input voltage signal VP and the second input voltage signal VN, generate a transduction amplification current to the sixth N-type transistor MN6 and the seventh N-type transistor MN6 N-type transistor MN7.

如图2所示,第四P型晶体管MP4具有第一端、第二端及控制端,所述第四P型晶体管MP4的第一端耦接于第三P型晶体管MP3的第二端,第四P型晶体管MP4的控制端可接收第一输入电压信号VP。第五P型晶体管MP5,具有第一端、第二端及控制端,第五P型晶体管MP5的第一端耦接于第三P型晶体管MP3的第二端,五P型晶体管MP5的控制端可接收第二输入电压信号VN。第六N型晶体管MN6具有第一端、第二端及控制端,第六N型晶体管MN6的第一端耦接于第四P型晶体管MP4的第二端,第六N型晶体管MN6的第二端耦接于地电压GND,而第六N型晶体管MN6的控制端耦接于第六N型晶体管MN6的第一端。第七N型晶体管MN7具有第一端、第二端及控制端,第七N型晶体管MN7的第一端耦接于第五P型晶体管MP5的第二端,第七N型晶体管MN7的第二端耦接于地电压GND,而第七N型晶体管MN7的控制端耦接于第七N型晶体管MN7的第一端。As shown in FIG. 2 , the fourth P-type transistor MP4 has a first terminal, a second terminal and a control terminal. The first terminal of the fourth P-type transistor MP4 is coupled to the second terminal of the third P-type transistor MP3. The control terminal of the fourth P-type transistor MP4 can receive the first input voltage signal VP. The fifth P-type transistor MP5 has a first terminal, a second terminal and a control terminal. The first terminal of the fifth P-type transistor MP5 is coupled to the second terminal of the third P-type transistor MP3. The fifth P-type transistor MP5 controls the The terminal can receive the second input voltage signal VN. The sixth N-type transistor MN6 has a first terminal, a second terminal and a control terminal. The first terminal of the sixth N-type transistor MN6 is coupled to the second terminal of the fourth P-type transistor MP4. The sixth N-type transistor MN6 has a first terminal. The two terminals are coupled to the ground voltage GND, and the control terminal of the sixth N-type transistor MN6 is coupled to the first terminal of the sixth N-type transistor MN6. The seventh N-type transistor MN7 has a first terminal, a second terminal and a control terminal. The first terminal of the seventh N-type transistor MN7 is coupled to the second terminal of the fifth P-type transistor MP5. The seventh N-type transistor MN7 has a first terminal. The two terminals are coupled to the ground voltage GND, and the control terminal of the seventh N-type transistor MN7 is coupled to the first terminal of the seventh N-type transistor MN7.

在本实施例中,P型晶体管差分放大单元120与N型晶体管复制差分输入单元130具有类型互补的输入对晶体管,因此当第一输入电压信号VP及第二输入电压信号VN的共模电压产生变化时,P型晶体管差分放大单元120所产生的电流变化会与N型晶体管复制差分输入单元130所产生的电流变化具有相反的变化方向。举例来说,当P型晶体管差分放大单元120所产生的电流增加时,N型晶体管复制差分输入单元130所产生的电流则会减少,反之亦然。再者,由于P型晶体管差分放大单元120与N型晶体管复制差分输入单元130可共同由第一偏置电流IB1偏置,因此即使P型晶体管差分放大单元120与N型晶体管复制差分输入单元130各自所产生的电流可能会因为第一输入电压信号VP及第二输入电压信号VN的共模电压变化而变化,然而P型晶体管差分放大单元120与N型晶体管复制差分输入单元130两者所产生的电流总和仍可保持不变。In this embodiment, the P-type transistor differential amplifying unit 120 and the N-type transistor replica differential input unit 130 have input pair transistors of complementary types, so when the common mode voltage of the first input voltage signal VP and the second input voltage signal VN is generated When changing, the current change generated by the P-type transistor differential amplifying unit 120 and the current change generated by the N-type transistor replicating the differential input unit 130 have the opposite direction of change. For example, when the current generated by the P-type transistor differential amplifier unit 120 increases, the current generated by the N-type transistor replica differential input unit 130 decreases, and vice versa. Furthermore, since the P-type transistor differential amplifying unit 120 and the N-type transistor replica differential input unit 130 can be biased by the first bias current IB1 together, even if the P-type transistor differential amplifying unit 120 and the N-type transistor replicating the differential input unit 130 The respective generated currents may vary due to changes in the common-mode voltage of the first input voltage signal VP and the second input voltage signal VN, but both the P-type transistor differential amplifying unit 120 and the N-type transistor replicate the differential input unit 130. The sum of the currents remains the same.

如图2所示,N型晶体管复制差分输入单元130可包括第十N型晶体管MN10及第十一N型晶体管MN11。第十N型晶体管MN10具有第一端、第二端及控制端,第十N型晶体管MN10的第一端耦接于第三P型晶体管MP3的第二端,而第十N型晶体管MN10的控制端可接收第一输入电压信号VP。第十一N型晶体管MN11具有第一端、第二端及控制端,第十一N型晶体管MN11的第一端耦接于第三P型晶体管MP3的第二端,第十一N型晶体管MN11的第二端耦接于第十N型晶体管MN10的第二端,而第十一P型晶体管MN11的控制端可接收第二输入电压信号VN。As shown in FIG. 2 , the N-type transistor replica differential input unit 130 may include a tenth N-type transistor MN10 and an eleventh N-type transistor MN11 . The tenth N-type transistor MN10 has a first terminal, a second terminal and a control terminal, the first terminal of the tenth N-type transistor MN10 is coupled to the second terminal of the third P-type transistor MP3, and the tenth N-type transistor MN10 has a first terminal. The control terminal can receive the first input voltage signal VP. The eleventh N-type transistor MN11 has a first terminal, a second terminal and a control terminal, the first terminal of the eleventh N-type transistor MN11 is coupled to the second terminal of the third P-type transistor MP3, and the eleventh N-type transistor The second terminal of the MN11 is coupled to the second terminal of the tenth N-type transistor MN10, and the control terminal of the eleventh P-type transistor MN11 can receive the second input voltage signal VN.

在本实施例中,偏置单元110的第三电流镜116还可包括第五N型晶体管MN5以对N型晶体管复制差分输入单元130提供偏置电流IB3,使得N型晶体管复制差分输入单元130对应产生并输出偏置电流IB3。第五N型晶体管MN5具有第一端、第二端及控制端,第五N型晶体管MN5的第一端耦接于第八N型晶体管MN8的第二端以提供偏置电流IB3,第五N型晶体管MN5的第二端耦接于接地电压GND,及第五N型晶体管MN5的控制端耦接于第三N型晶体管MN3的控制端以接收偏置电压VB2。In this embodiment, the third current mirror 116 of the bias unit 110 may further include a fifth N-type transistor MN5 to provide the bias current IB3 to the N-type transistor replicating the differential input unit 130 , so that the N-type transistor replicating the differential input unit 130 Correspondingly generate and output the bias current IB3. The fifth N-type transistor MN5 has a first terminal, a second terminal and a control terminal. The first terminal of the fifth N-type transistor MN5 is coupled to the second terminal of the eighth N-type transistor MN8 to provide a bias current IB3. The second terminal of the N-type transistor MN5 is coupled to the ground voltage GND, and the control terminal of the fifth N-type transistor MN5 is coupled to the control terminal of the third N-type transistor MN3 to receive the bias voltage VB2.

此外,在本实施例中,偏置单元110可通过第四N型晶体管MN4对P型晶体管复制差分输入单元140与N型晶体管差分放大单元150提供第二偏置电流IB2,使得P型晶体管复制差分输入单元140与N型晶体管差分放大单元150的总输出电流为第二偏置电流IB2。In addition, in this embodiment, the bias unit 110 can provide the second bias current IB2 to the P-type transistor replica differential input unit 140 and the N-type transistor differential amplifying unit 150 through the fourth N-type transistor MN4, so that the P-type transistor replicates The total output current of the differential input unit 140 and the N-type transistor differential amplifying unit 150 is the second bias current IB2.

如图2所示,P型晶体管复制差分输入单元140包括第六P型晶体管MP6及第七P型晶体管MP7。第六P型晶体管MP6具有第一端、第二端及控制端,第六P型晶体管MP6的第二端耦接于第四N型晶体管MN4的第一端,而第六P型晶体管MP6的控制端可接收第一输入电压信号VP。第七P型晶体管MP7具有第一端、第二端及控制端,第七P型晶体管MP7的第一端耦接于第六P型晶体管MP6的第一端,第七P型晶体管MP7的第二端耦接于第四N型晶体管MN4的第一端,而第七P型晶体管MN7的控制端可接收第二输入电压信号VN。As shown in FIG. 2 , the P-type transistor replica differential input unit 140 includes a sixth P-type transistor MP6 and a seventh P-type transistor MP7 . The sixth P-type transistor MP6 has a first terminal, a second terminal and a control terminal, the second terminal of the sixth P-type transistor MP6 is coupled to the first terminal of the fourth N-type transistor MN4, and the sixth P-type transistor MP6 has a The control terminal can receive the first input voltage signal VP. The seventh P-type transistor MP7 has a first terminal, a second terminal and a control terminal. The first terminal of the seventh P-type transistor MP7 is coupled to the first terminal of the sixth P-type transistor MP6. The seventh P-type transistor MP7 has a first terminal. The two terminals are coupled to the first terminal of the fourth N-type transistor MN4, and the control terminal of the seventh P-type transistor MN7 can receive the second input voltage signal VN.

此外,在本实施例中,偏置单元110的第二电流镜114还可包括第八P型晶体管MP8用以提供P型晶体管复制差分输入单元140所需的偏置电流IB4。第八P型晶体管MP8具有第一端、第二端及控制端,第八P型晶体管MP8的第一端耦接于电源电压VPP,第八P型晶体管MP8的第二端耦接于第六P型晶体管MP6的第一端以提供偏置电流IB4,而第八P型晶体管MP8的控制端耦接于第二P型晶体管MP2的控制端以接收偏置电压VB1。In addition, in this embodiment, the second current mirror 114 of the bias unit 110 may further include an eighth P-type transistor MP8 for providing the bias current IB4 required by the P-type transistor to replicate the differential input unit 140 . The eighth P-type transistor MP8 has a first terminal, a second terminal and a control terminal. The first terminal of the eighth P-type transistor MP8 is coupled to the power supply voltage VPP, and the second terminal of the eighth P-type transistor MP8 is coupled to the sixth terminal. The first terminal of the P-type transistor MP6 provides the bias current IB4, and the control terminal of the eighth P-type transistor MP8 is coupled to the control terminal of the second P-type transistor MP2 to receive the bias voltage VB1.

N型晶体管差分放大单元150可包括第九P型晶体管MP9、第十P型晶体管MP10、第八N型晶体管MN8及第九N型晶体管MN9。第九P型晶体管MP9具有第一端、第二端及控制端,第九P型晶体管MP9的第一端耦接于电源电压VPP,而第九P型晶体管MP9的控制端耦接于第九P型晶体管MP9的第二端。第十P型晶体管MP10具有第一端、第二端及控制端,第十P型晶体管MP10的第一端耦接于电源电压VPP,而第十P型晶体管MP10的控制端耦接于第十P型晶体管MP10的第二端。第八N型晶体管MN8具有第一端、第二端及控制端,第八N型晶体管MN8的第一端耦接于第九P型晶体管MP9的第二端,第八N型晶体管MN8的第二端耦接于第四N型晶体管MN4的第一端,而第八N型晶体管MN8的控制端可接收第一输入电压信号VP。第九N型晶体管MN9具有第一端、第二端及控制端,第九N型晶体管MN9的第一端耦接于第十P型晶体管MP10的第二端,第九N型晶体管MN9的第二端耦接于第四N型晶体管MN4的第一端,而第九N型晶体管MN9的控制端可接收第二输入电压信号VN。The N-type transistor differential amplifying unit 150 may include a ninth P-type transistor MP9, a tenth P-type transistor MP10, an eighth N-type transistor MN8, and a ninth N-type transistor MN9. The ninth P-type transistor MP9 has a first terminal, a second terminal and a control terminal, the first terminal of the ninth P-type transistor MP9 is coupled to the power supply voltage VPP, and the control terminal of the ninth P-type transistor MP9 is coupled to the ninth P-type transistor MP9 The second terminal of the P-type transistor MP9. The tenth P-type transistor MP10 has a first terminal, a second terminal and a control terminal, the first terminal of the tenth P-type transistor MP10 is coupled to the power supply voltage VPP, and the control terminal of the tenth P-type transistor MP10 is coupled to the tenth P-type transistor MP10 The second terminal of the P-type transistor MP10. The eighth N-type transistor MN8 has a first terminal, a second terminal and a control terminal. The first terminal of the eighth N-type transistor MN8 is coupled to the second terminal of the ninth P-type transistor MP9. The eighth N-type transistor MN8 has a first terminal. The two terminals are coupled to the first terminal of the fourth N-type transistor MN4, and the control terminal of the eighth N-type transistor MN8 can receive the first input voltage signal VP. The ninth N-type transistor MN9 has a first terminal, a second terminal and a control terminal. The first terminal of the ninth N-type transistor MN9 is coupled to the second terminal of the tenth P-type transistor MP10. The ninth N-type transistor MN9 has a first terminal. The two terminals are coupled to the first terminal of the fourth N-type transistor MN4, and the control terminal of the ninth N-type transistor MN9 can receive the second input voltage signal VN.

电流平衡单元160包括第十一P型晶体管MP11及第十二N型晶体管MN12。第十一P型晶体管MP11,具有第一端、第二端及控制端,第十一P型晶体管MP11的第一端耦接于电源电压VPP,第十一P型晶体管MP11的第二端耦接于第七N型晶体管MN7的第一端,而第十一P型晶体管MP11的控制端耦接于第十P型晶体管MP10的控制端。第十二N型晶体管MN12,具有第一端、第二端及控制端,第十二N型晶体管MN12的第一端耦接于第九P型晶体管MP9的第二端,第十二N型晶体管MN12的第二端耦接于地电压GND,而第十二N型晶体管MN12的控制端耦接于第六N型晶体管MN6的控制端。在本实施例中,第十一P型晶体管MP11可复制第十P型晶体管MP10所产生的电流至第七N型晶体管MN7,而第十二N型晶体管MN12可复制第六N型晶体管MN6所产生的电流至第九P型晶体管MP9,从而平衡P型晶体管差分放大单元120及N型晶体管差分放大单元150所产生的电流。The current balance unit 160 includes an eleventh P-type transistor MP11 and a twelfth N-type transistor MN12. The eleventh P-type transistor MP11 has a first terminal, a second terminal and a control terminal. The first terminal of the eleventh P-type transistor MP11 is coupled to the power supply voltage VPP, and the second terminal of the eleventh P-type transistor MP11 is coupled to is connected to the first terminal of the seventh N-type transistor MN7, and the control terminal of the eleventh P-type transistor MP11 is coupled to the control terminal of the tenth P-type transistor MP10. The twelfth N-type transistor MN12 has a first terminal, a second terminal and a control terminal. The first terminal of the twelfth N-type transistor MN12 is coupled to the second terminal of the ninth P-type transistor MP9. The twelfth N-type transistor MN12 has a first terminal. The second terminal of the transistor MN12 is coupled to the ground voltage GND, and the control terminal of the twelfth N-type transistor MN12 is coupled to the control terminal of the sixth N-type transistor MN6. In this embodiment, the eleventh P-type transistor MP11 can replicate the current generated by the tenth P-type transistor MP10 to the seventh N-type transistor MN7, and the twelfth N-type transistor MN12 can replicate the current generated by the sixth N-type transistor MN6. The generated current is sent to the ninth P-type transistor MP9 to balance the currents generated by the P-type transistor differential amplifying unit 120 and the N-type transistor differential amplifying unit 150 .

输出单元170包括第十二P型晶体管MP12及第十三N型晶体管MN13。第十二P型晶体管MP12具有第一端、第二端及控制端,第十二P型晶体管MP12的第一端耦接于电源电压VPP,第十二P型晶体管MP12的第二端耦接放大电路100的输出端OUT,而第十二P型晶体管MP12的控制端耦接于第九P型晶体管MP9的控制端。第十三N型晶体管MN13具有第一端、第二端及控制端,第十三N型晶体管MN13的第一端耦接于输出端OUT,第十三N型晶体管MN13的第二端耦接于地电压GND,而第十三N型晶体管MN13的控制端耦接于七N型晶体管MN7的控制端。The output unit 170 includes a twelfth P-type transistor MP12 and a thirteenth N-type transistor MN13. The twelfth P-type transistor MP12 has a first terminal, a second terminal and a control terminal, the first terminal of the twelfth P-type transistor MP12 is coupled to the power supply voltage VPP, and the second terminal of the twelfth P-type transistor MP12 is coupled to The output terminal OUT of the amplifying circuit 100, and the control terminal of the twelfth P-type transistor MP12 is coupled to the control terminal of the ninth P-type transistor MP9. The thirteenth N-type transistor MN13 has a first terminal, a second terminal and a control terminal. The first terminal of the thirteenth N-type transistor MN13 is coupled to the output terminal OUT, and the second terminal of the thirteenth N-type transistor MN13 is coupled to the output terminal OUT. At the ground voltage GND, the control terminal of the thirteenth N-type transistor MN13 is coupled to the control terminal of the seven N-type transistors MN7.

图3是第一输入电压信号VP及第二输入电压信号VN相等且两者的共模电压为电源电压VDD的一半时,放大电路100的电流示意图。在本实施例中,第三P型晶体管MP3的宽长比可以是第一P型晶体管MP1的宽长比的一特定倍数,例如为二倍,使得流经第三P型晶体管MP3的第一偏置电流IB1为流经第一P型晶体管MP1的电流的两倍。此外,为实现在此共模电压下,流经N型晶体管复制差分输入单元130的复制对管电流可占第一偏置电流IB1的二分之一,可设置第五N型晶体管MN5的宽长比可等于第三N型晶体管MN3的宽长比。此外,第四N型晶体管MN4的宽长比也可以是第三N型晶体管MN3的宽长比的同样所述特定倍数,例如为二倍,使得流经第四N型晶体管MN4的第二偏置电流IB2为流经第三N型晶体管MN3的电流的两倍。同样地,为实现在此共模电压下,流经P型晶体管复制差分输入单元140的复制对管电流可占第二偏置电流IB2的二分之一,则可设置第八P型晶体管MP8的宽长比等于第一P型晶体管MP1的宽长比。在此情况下,第一偏置电流IB1的电流值即为偏置电流IB3的电流值的两倍,而第二偏置电流IB2的电流值即为偏置电流IB4的电流值的两倍,且第一偏置电流IB1及第二偏置电流IB2可具有相同的电流值。3 is a schematic diagram of the current of the amplifying circuit 100 when the first input voltage signal VP and the second input voltage signal VN are equal and the common mode voltage of the two is half of the power supply voltage VDD. In this embodiment, the aspect ratio of the third P-type transistor MP3 may be a specific multiple of the aspect ratio of the first P-type transistor MP1, for example, twice, so that the first P-type transistor MP3 flows through the first P-type transistor MP3. The bias current IB1 is twice the current flowing through the first P-type transistor MP1. In addition, in order to realize that under this common mode voltage, the replica pair tube current flowing through the N-type transistor replica differential input unit 130 can account for half of the first bias current IB1, the width of the fifth N-type transistor MN5 can be set The aspect ratio may be equal to the aspect ratio of the third N-type transistor MN3. In addition, the width-to-length ratio of the fourth N-type transistor MN4 may also be the same specific multiple of the width-to-length ratio of the third N-type transistor MN3, for example, twice, so that the second bias flowing through the fourth N-type transistor MN4 The set current IB2 is twice the current flowing through the third N-type transistor MN3. Similarly, in order to realize that under this common mode voltage, the replica pair tube current flowing through the P-type transistor replica differential input unit 140 can account for half of the second bias current IB2, an eighth P-type transistor MP8 can be provided. The width to length ratio of is equal to the width to length ratio of the first P-type transistor MP1. In this case, the current value of the first bias current IB1 is twice the current value of the bias current IB3, and the current value of the second bias current IB2 is twice the current value of the bias current IB4, And the first bias current IB1 and the second bias current IB2 may have the same current value.

在本实施例中,由于P型晶体管差分放大单元120及N型晶体管复制差分输入单元130会共同接收第一偏置电流IB1,且第五N型晶体管MN5所提供的偏置电流IB3的电流值为第一偏置电流IB1的电流值的一半,因此P型晶体管差分放大单元120也将流入大小是第一偏置电流IB1的一半的电流。此外,在第一输入电压信号VP及第二输入电压信号VN相同的情况下,在P型晶体管差分放大单元120中,第四P型晶体管MP4及第五P型晶体管MP5将流过相同大小的电流,而在N型晶体管复制差分输入单元130中,第十N型晶体管MN10及第十一N型晶体管MN11也将流过相同大小的电流。也就是说,第四P型晶体管MP4、第五P型晶体管MP5、第十N型晶体管MN10及第十一N型晶体管MN11都将流经四分之一的第一偏置电流IB1,亦即

Figure BDA0003431907360000141
In this embodiment, since the P-type transistor differential amplifying unit 120 and the N-type transistor replica differential input unit 130 jointly receive the first bias current IB1, and the current value of the bias current IB3 provided by the fifth N-type transistor MN5 is half of the current value of the first bias current IB1, so the P-type transistor differential amplifying unit 120 will also flow a current whose magnitude is half of the first bias current IB1. In addition, when the first input voltage signal VP and the second input voltage signal VN are the same, in the P-type transistor differential amplifying unit 120, the fourth P-type transistor MP4 and the fifth P-type transistor MP5 will flow through the same magnitude of In the N-type transistor replica differential input unit 130, the tenth N-type transistor MN10 and the eleventh N-type transistor MN11 will also flow a current of the same magnitude. That is to say, the fourth P-type transistor MP4, the fifth P-type transistor MP5, the tenth N-type transistor MN10 and the eleventh N-type transistor MN11 will all flow through a quarter of the first bias current IB1, that is,
Figure BDA0003431907360000141

相似地,由于P型晶体管复制差分输入单元140及N型晶体管差分放大单元150所输出的电流总和应为第二偏置电流IB2,且第八P型晶体管MP8所提供的偏置电流IB4为第四N型晶体管MN4所提供的偏置电流IB2的一半,因此P型晶体管复制差分输入单元140及N型晶体管差分放大单元150将各输出大小是偏置电流IB2的一半的电流。在第一输入电压信号VP及第二输入电压信号VN相同的情况下,在P型晶体管复制差分输入单元140中,第六P型晶体管MP6及第七P型晶体管MP7将流过相同大小的电流,而在N型晶体管差分放大单元150中,第八N型晶体管MN8及第九N型晶体管MN9也将流过相同大小的电流。也就是说,第六P型晶体管MP6、第七P型晶体管MP7、第八N型晶体管MN8及第九N型晶体管MN9都将流经四分之一的第二偏置电流IB2,亦即

Figure BDA0003431907360000142
Similarly, the sum of the currents output by the P-type transistor replica differential input unit 140 and the N-type transistor differential amplifying unit 150 should be the second bias current IB2, and the bias current IB4 provided by the eighth P-type transistor MP8 is the second bias current IB4. The four N-type transistors MN4 provide half of the bias current IB2, so the P-type transistor replica differential input unit 140 and the N-type transistor differential amplifying unit 150 each output a current whose magnitude is half of the bias current IB2. In the case where the first input voltage signal VP and the second input voltage signal VN are the same, in the P-type transistor replica differential input unit 140, the sixth P-type transistor MP6 and the seventh P-type transistor MP7 will flow currents of the same magnitude , and in the N-type transistor differential amplifying unit 150, the eighth N-type transistor MN8 and the ninth N-type transistor MN9 will also flow a current of the same magnitude. That is to say, the sixth P-type transistor MP6, the seventh P-type transistor MP7, the eighth N-type transistor MN8 and the ninth N-type transistor MN9 will all flow through a quarter of the second bias current IB2, that is,
Figure BDA0003431907360000142

此外,在本实施例中,第十一P型晶体管MP11的宽长比与第十P型晶体管MP10的宽长比相等,而十二N型晶体管MN12的宽长比与第六N型晶体管MN6的宽长比相等。在此情况下,第十一P型晶体管MP11将可依据流经第十P型晶体管MP10的电流

Figure BDA0003431907360000143
产生与电流
Figure BDA0003431907360000151
等量的复制电流至第七N型晶体管MN7,而第十二N型晶体管MN12则可依据流经第六N型晶体管MN6的电流
Figure BDA0003431907360000152
产生与电流
Figure BDA0003431907360000153
等量的复制电流,并使第九P型晶体管MP9另外输出第十二N型晶体管MN12所复制产生的电流。也就是说,如图3所示,流经第九P型晶体管MP9的电流总和为
Figure BDA0003431907360000154
相当于二分之一倍的第二偏置电流
Figure BDA0003431907360000155
而流经第七N型晶体管MN7的电流总和为
Figure BDA0003431907360000156
相当于二分之一倍的第一偏置电流
Figure BDA0003431907360000157
In addition, in this embodiment, the aspect ratio of the eleventh P-type transistor MP11 is equal to that of the tenth P-type transistor MP10 , and the aspect ratio of the twelve N-type transistor MN12 is equal to that of the sixth N-type transistor MN6 The width to length ratio is equal. In this case, the eleventh P-type transistor MP11 will depend on the current flowing through the tenth P-type transistor MP10
Figure BDA0003431907360000143
generate with current
Figure BDA0003431907360000151
The same amount of replication current is applied to the seventh N-type transistor MN7, and the twelfth N-type transistor MN12 is based on the current flowing through the sixth N-type transistor MN6.
Figure BDA0003431907360000152
generate with current
Figure BDA0003431907360000153
The same amount of current is copied, and the ninth P-type transistor MP9 additionally outputs the current copied by the twelfth N-type transistor MN12. That is to say, as shown in FIG. 3 , the sum of the currents flowing through the ninth P-type transistor MP9 is
Figure BDA0003431907360000154
Equivalent to one-half the second bias current
Figure BDA0003431907360000155
The sum of the currents flowing through the seventh N-type transistor MN7 is
Figure BDA0003431907360000156
Equivalent to one-half the first bias current
Figure BDA0003431907360000157

在本实施例中,十二P型晶体管MP12的宽长比可以是第九P型晶体管MP9的宽长比的四倍,而十三N型晶体管MN13的宽长比可以是第七N型晶体管MN7的宽长比的四倍。在此情况下,第十二P型晶体管MP12将依据流经第九P型晶体管MP9的电流而产生两倍的第二偏置电流IB2,亦即2IB2,而第十三N型晶体管MN13则将依据流经第七N型晶体管MN7的电流而产生两倍的第一偏置电流IB1,亦即2IB1。由于第一偏置电流IB1与第二偏置电流IB2实质上具有相同的电流值,因此输出单元170所产生的输出端电流实质上即是两倍的第一偏置电流IB1。In this embodiment, the aspect ratio of the twelve P-type transistors MP12 may be four times that of the ninth P-type transistor MP9, and the aspect ratio of the thirteen N-type transistors MN13 may be the seventh N-type transistor. Four times the aspect ratio of the MN7. In this case, the twelfth P-type transistor MP12 will generate twice the second bias current IB2, namely 2IB2 according to the current flowing through the ninth P-type transistor MP9, and the thirteenth N-type transistor MN13 will According to the current flowing through the seventh N-type transistor MN7, twice the first bias current IB1, that is, 2IB1, is generated. Since the first bias current IB1 and the second bias current IB2 have substantially the same current value, the output current generated by the output unit 170 is substantially twice the first bias current IB1.

此外,由于放大电路100使用了彼此互补共源放大器组及与之并联的电流分支电路,并通过电流平衡单元160来平衡其中P型晶体管差分放大单元120及N型晶体管差分放大单元150所产生的电流,因此在第一输入电压信号VP及第二输入电压信号VN的共模电压产生变化时,仍可维持输出单元170的输出端电流不变。In addition, since the amplifier circuit 100 uses the complementary common-source amplifier group and the parallel current branch circuit, and the current balance unit 160 is used to balance the P-type transistor differential amplifying unit 120 and the N-type transistor differential amplifying unit 150, the Therefore, when the common mode voltage of the first input voltage signal VP and the second input voltage signal VN changes, the current at the output terminal of the output unit 170 can still be maintained.

图4是第一输入电压信号VP及第二输入电压信号VN相等且两者的共模电压为电源电压VDD时,放大电路100的电流示意图。如图4所示,当第一输入电压信号VP及第二输入电压信号VN的共模电压变为电源电压VDD时,P型晶体管差分放大单元120中的P型晶体管MP4及MP5都将被截止。相似地,P型晶体管复制差分输入单元140中的P型晶体管MP6及MP7将被截止4 is a schematic diagram of the current of the amplifying circuit 100 when the first input voltage signal VP and the second input voltage signal VN are equal and the common mode voltage of the two is the power supply voltage VDD. As shown in FIG. 4 , when the common-mode voltage of the first input voltage signal VP and the second input voltage signal VN becomes the power supply voltage VDD, both the P-type transistors MP4 and MP5 in the P-type transistor differential amplifying unit 120 will be turned off . Similarly, the P-type transistors MP6 and MP7 in the P-type transistor replica differential input unit 140 will be turned off

在此情况下,由于第四P型晶体管MP4会被截止,因此第六N型晶体管MN6也不会产生电流,此时电流平衡单元160中的第十二N型晶体管MN12也不会产生电流,而第九P型晶体管MP9也不会输出额外的电流至第十二N型晶体管MN12,因此第九P型晶体管MP9与第八N型晶体管MN8将流经相同的电流

Figure BDA0003431907360000161
相对地,第十一P型晶体管MP11则会复制第十P型晶体管MP10所产生的电流
Figure BDA0003431907360000162
至第七N型晶体管MN7,因此第七N型晶体管MN7仍会流经电流
Figure BDA0003431907360000163
如此一来,第十二P型晶体管MP12将依据流经第九P型晶体管MP9的电流而产生两倍的第二偏置电流IB2,亦即2IB2,而第十三N型晶体管MN13则将依据流经第七N型晶体管MN7的电流而产生两倍的第二偏置电流IB2,亦即2IB2。由于第一偏置电流IB1与第二偏置电流IB2实质上具有相同的电流值,因此输出单元170所产生的输出端电流实质上仍为两倍的第一偏置电流IB1。In this case, since the fourth P-type transistor MP4 will be turned off, the sixth N-type transistor MN6 will not generate current, and the twelfth N-type transistor MN12 in the current balancing unit 160 will also not generate current. And the ninth P-type transistor MP9 will not output additional current to the twelfth N-type transistor MN12, so the ninth P-type transistor MP9 and the eighth N-type transistor MN8 will flow the same current
Figure BDA0003431907360000161
Conversely, the eleventh P-type transistor MP11 replicates the current generated by the tenth P-type transistor MP10
Figure BDA0003431907360000162
to the seventh N-type transistor MN7, so the seventh N-type transistor MN7 will still flow current
Figure BDA0003431907360000163
In this way, the twelfth P-type transistor MP12 will generate twice the second bias current IB2 according to the current flowing through the ninth P-type transistor MP9, that is, 2IB2, and the thirteenth N-type transistor MN13 will be generated according to the current flowing through the ninth P-type transistor MP9. The current flowing through the seventh N-type transistor MN7 generates twice the second bias current IB2, that is, 2IB2. Since the first bias current IB1 and the second bias current IB2 have substantially the same current value, the output current generated by the output unit 170 is still substantially twice that of the first bias current IB1.

此外,当第一输入电压信号VP及第二输入电压信号VN相等且两者的共模电压为地电压GND时,放大电路100也可依据类似的原理而通过电流平衡单元160来平衡P型晶体管差分放大单元120及N型晶体管差分放大单元150所产生的电流,从而使输出单元170所产生的输出端电流保持稳定不变。由于放大电路100可以维持输出端电流恒定,因此当放大电路100被应用在电荷泵当中时,就比较不会对电荷泵的工作点造成影响,使得电荷泵的操作更为精准。In addition, when the first input voltage signal VP and the second input voltage signal VN are equal and the common mode voltage of the two is the ground voltage GND, the amplifying circuit 100 can also use the current balancing unit 160 to balance the P-type transistors according to a similar principle The current generated by the differential amplifying unit 120 and the N-type transistor differential amplifying unit 150 keeps the output current generated by the output unit 170 stable. Since the amplifying circuit 100 can maintain a constant current at the output terminal, when the amplifying circuit 100 is used in a charge pump, it will not affect the operating point of the charge pump, so that the operation of the charge pump is more accurate.

由于放大电路100可以利用互补的单级输入共源放大器组,例如P型晶体管差分放大单元120及N型晶体管差分放大单元150,来提供增益,而可不使用额外的反馈电路,因此所需的电路面积较少,带宽较大,功耗也较低。此外,放大电路100还可通过与共源放大器并联的电流分支电路,例如P型晶体管复制差分输入单元140及N型晶体管复制差分输入单元130,以及电流平衡单元160来平衡共源放大器组的电流,因此还可保持输出端电流稳定不变,从而减少对电荷泵的工作点的影响。然而,本申请并不以此为限,在有些实施例中,为了提高放大电路的增益,也可在放大电路中加入缓冲反馈单元。Since the amplifying circuit 100 can utilize complementary single-stage input common-source amplifier groups, such as the P-type transistor differential amplifying unit 120 and the N-type transistor differential amplifying unit 150, to provide gain without using an additional feedback circuit, the required circuit Less area, more bandwidth, and lower power consumption. In addition, the amplifying circuit 100 can also balance the current of the common source amplifier group through a current branch circuit connected in parallel with the common source amplifier, such as the P-type transistor replicating the differential input unit 140 and the N-type transistor replicating the differential input unit 130, and the current balancing unit 160. Therefore, the output current can also be kept stable, thereby reducing the influence on the operating point of the charge pump. However, the present application is not limited to this. In some embodiments, in order to improve the gain of the amplifier circuit, a buffer feedback unit may also be added to the amplifier circuit.

图5是本申请另一实施例的放大电路200的示意图。放大电路200与放大电路100具有相似的结构并可依据相似的原理操作,然而放大电路200还可包括缓冲反馈单元280。缓冲反馈单元280可耦接于P型晶体管差分放大单元220、N型晶体管差分放大单元250、电流平衡单元260及输出单元270,并且可以稳定P型晶体管差分放大单元220及N型晶体管差分放大单元250所产生的电流及/或提升放大电路200的增益。FIG. 5 is a schematic diagram of an amplifying circuit 200 according to another embodiment of the present application. The amplifying circuit 200 and the amplifying circuit 100 have a similar structure and operate according to a similar principle, however, the amplifying circuit 200 may further include a buffer feedback unit 280 . The buffer feedback unit 280 can be coupled to the P-type transistor differential amplifying unit 220, the N-type transistor differential amplifying unit 250, the current balance unit 260 and the output unit 270, and can stabilize the P-type transistor differential amplifying unit 220 and the N-type transistor differential amplifying unit 250 generates a current and/or boosts the gain of the amplifier circuit 200 .

此外,在有些实施例中,P型晶体管差分放大单元220、P型晶体管复制差分输入单元240、N型晶体管复制差分输入单元230及N型晶体管差分放大单元250可与图2中所示的P型晶体管差分放大单元120、P型晶体管复制差分输入单元140、N型晶体管复制差分输入单元130及N型晶体管差分放大单元150使用相同的结构,然而本申请并不限于此。在有些实施例中,P型晶体管差分放大单元220、P型晶体管复制差分输入单元240、N型晶体管复制差分输入单元230及N型晶体管差分放大单元250中的任一者也可利用共源共栅放大器(CascodeAmplifier)的结构来实作以取得较大的输入及输出阻抗。In addition, in some embodiments, the P-type transistor differential amplifying unit 220 , the P-type transistor replica differential input unit 240 , the N-type transistor replica differential input unit 230 , and the N-type transistor differential amplifying unit 250 may be the same as the P-type transistor differential amplifying unit 250 shown in FIG. 2 . The type transistor differential amplifying unit 120 , the P-type transistor replica differential input unit 140 , the N-type transistor replica differential input unit 130 , and the N-type transistor differential amplifying unit 150 use the same structure, but the present application is not limited thereto. In some embodiments, any one of the P-type transistor differential amplifying unit 220 , the P-type transistor replica differential input unit 240 , the N-type transistor replica differential input unit 230 , and the N-type transistor differential amplifying unit 250 may also utilize a common source The structure of the gate amplifier (CascodeAmplifier) is implemented to obtain larger input and output impedances.

图6是本申请一实施例的P型晶体管差分放大单元220的电路图。如图6所示,P型晶体管差分放大单元220可包括P型晶体管MP1A、MP2A、MP3A及MP4A以及N型晶体管MN1A、MN2A、MN3A及MN4A。P型晶体管MP1A及MP2A的控制端可分别接收第一输入电压信号VP及第二输入电压信号VN,而P型晶体管MP3A及MP4A以及N型晶体管MN1A、MN2A、MN3A及MN4A的控制端则可分别接收对应的偏置电压VB1A、VB2A及VB3A。在有些实施例中,偏置电压VB1A、VB2A及VB3A可例如由偏置单元210所提供。FIG. 6 is a circuit diagram of a P-type transistor differential amplifying unit 220 according to an embodiment of the present application. As shown in FIG. 6 , the P-type transistor differential amplifying unit 220 may include P-type transistors MP1A, MP2A, MP3A and MP4A and N-type transistors MN1A, MN2A, MN3A and MN4A. The control terminals of the P-type transistors MP1A and MP2A can receive the first input voltage signal VP and the second input voltage signal VN respectively, while the control terminals of the P-type transistors MP3A and MP4A and the N-type transistors MN1A, MN2A, MN3A and MN4A can be respectively The corresponding bias voltages VB1A, VB2A and VB3A are received. In some embodiments, the bias voltages VB1A, VB2A, and VB3A may be provided, for example, by the bias unit 210 .

再者,在有些实施例中,P型晶体管差分放大单元220、P型晶体管复制差分输入单元240、N型晶体管复制差分输入单元230及N型晶体管差分放大单元250中的任一者也可利用折叠式差分对的结构来实作以取得较大的增益。图7是本申请一实施例的N型晶体管差分输入单元250的电路图。Furthermore, in some embodiments, any one of the P-type transistor differential amplifying unit 220 , the P-type transistor replica differential input unit 240 , the N-type transistor replica differential input unit 230 , and the N-type transistor differential amplifying unit 250 may also be utilized. The structure of the folded differential pair is implemented to achieve greater gain. FIG. 7 is a circuit diagram of an N-type transistor differential input unit 250 according to an embodiment of the present application.

在本实施例中,偏置单元210可包括P型晶体管MP1B,P型晶体管MP1B可接收偏置电压VB1B,并可提供偏置电流IB2B至P型晶体管复制差分输入单元240及N型晶体管差分放大单元250。在本实施例中,偏置单元210还可包括N型晶体管MN1B,N型晶体管MN1B可接收偏置电压VB2B,并可提供另一偏置电流IB4B至P型晶体管复制差分输入单元240,使得P型晶体管复制差分输入单元240可对应产生并输出偏置电流IB4B。此外,偏置电流IB4B的电流值可以是偏置电流IB2B的一半,在此情况下,在第一输入电压信号VP及第二输入电压信号VN的共模电压为电源电压VDD的一半时,流入P型晶体管复制差分输入单元240的电流会与流入N型晶体管差分放大单元250的电流相同,两者同样是偏置电流IB2B的一半。在有些实施例中,P型晶体管差分放大单元220也以折叠式的共源共栅电路结构来实现,并可依照类似的原理对应地设置N型晶体管复制差分输入单元230所需的偏置电流及偏置电压。In this embodiment, the biasing unit 210 may include a P-type transistor MP1B, the P-type transistor MP1B may receive the bias voltage VB1B, and may provide the biasing current IB2B to the P-type transistor replica differential input unit 240 and the N-type transistor differential amplifying unit 250. In this embodiment, the biasing unit 210 may further include an N-type transistor MN1B, and the N-type transistor MN1B may receive the biasing voltage VB2B and may provide another biasing current IB4B to the P-type transistor replicating the differential input unit 240 so that P The type transistor replica differential input unit 240 can correspondingly generate and output the bias current IB4B. In addition, the current value of the bias current IB4B may be half of the bias current IB2B. In this case, when the common mode voltage of the first input voltage signal VP and the second input voltage signal VN is half of the power supply voltage VDD, the The current flowing into the P-type transistor replica differential input unit 240 will be the same as the current flowing into the N-type transistor differential amplifying unit 250 , which is also half of the bias current IB2B. In some embodiments, the P-type transistor differential amplifying unit 220 is also implemented with a folded cascode circuit structure, and the bias current required by the N-type transistor replicating the differential input unit 230 can be correspondingly set according to a similar principle and bias voltage.

N型晶体管差分放大单元250可包括P型晶体管MP2B、MP3B、MP4B、MP5B、MP6B及MP7B以及N型晶体管MN2B、MN3B、MN4B及MN5B。在本实施例中,为实现折叠式结构,N型晶体管差分放大单元250与图2的N型晶体管差分放大单元150可利用相反类型的晶体管来接收输入电压,例如图7所示,N型晶体管差分放大单元250的P型晶体管MP2B及MP3B的控制端可分别接收第一输入电压信号VP及第二输入电压信号VN。P型晶体管MP4B及MP5B可接收偏置电压VB3B,而P型晶体管MP6B及MP7B可接收偏置电压VB4B。此外,N型晶体管MN2B及MN3B可接收偏置电压VB5B,而N型晶体管MN4B及MN5B则可接收偏置电压VB6B。在有些实施例中,偏置电压VB3B、VB4B、VB5B及VB6B可例如由偏置单元210所提供。The N-type transistor differential amplifying unit 250 may include P-type transistors MP2B, MP3B, MP4B, MP5B, MP6B and MP7B and N-type transistors MN2B, MN3B, MN4B and MN5B. In this embodiment, in order to realize the folded structure, the N-type transistor differential amplifying unit 250 and the N-type transistor differential amplifying unit 150 in FIG. 2 can use opposite types of transistors to receive the input voltage. For example, as shown in FIG. 7 , the N-type transistors The control terminals of the P-type transistors MP2B and MP3B of the differential amplifying unit 250 can respectively receive the first input voltage signal VP and the second input voltage signal VN. P-type transistors MP4B and MP5B may receive bias voltage VB3B, while P-type transistors MP6B and MP7B may receive bias voltage VB4B. In addition, N-type transistors MN2B and MN3B can receive bias voltage VB5B, while N-type transistors MN4B and MN5B can receive bias voltage VB6B. In some embodiments, the bias voltages VB3B, VB4B, VB5B, and VB6B may be provided by the bias unit 210, for example.

在本实施例中,N型晶体管差分放大单元250中的输入对管,例如P型晶体管MP2B及MP3B的宽长比可等于其同类型的输入管,以通过复制对管反映同类型的输入对管的电流变化。举例来说,在第一输入电压信号VP及第二输入电压信号VN相等且两者的共模电压为电源电压VDD的一半时,N型晶体管差分放大单元250及P型晶体管复制差分输入单元240将流经相同的电流,例如二分之一的第一偏置电流IB1,即

Figure BDA0003431907360000191
且P型晶体管MP2B及MP3B将各流过四分之一的第一偏置电流IB1,即
Figure BDA0003431907360000192
In this embodiment, the input pairs in the N-type transistor differential amplifier unit 250, such as the P-type transistors MP2B and MP3B, may have a width-to-length ratio equal to the same type of input transistors, so that the same type of input pair can be reflected by duplicating the paired transistors. tube current changes. For example, when the first input voltage signal VP and the second input voltage signal VN are equal and their common mode voltage is half of the power supply voltage VDD, the N-type transistor differential amplifying unit 250 and the P-type transistor copy the differential input unit 240 will flow through the same current, for example one-half of the first bias current IB1, i.e.
Figure BDA0003431907360000191
And the P-type transistors MP2B and MP3B will each flow through a quarter of the first bias current IB1, namely
Figure BDA0003431907360000192

由于N型晶体管差分放大单元250具有折叠式的共源共栅电路结构,因此可以实现大增益,然而因为叠加的晶体管较多,因此也可能需较大功耗和较大的电源电压。也就是说,设计者可以依据实际的需求,以适当的结构实现P型晶体管差分放大单元220、P型晶体管复制差分输入单元240、N型晶体管复制差分输入单元230及N型晶体管差分放大单元250。Since the N-type transistor differential amplifying unit 250 has a folded cascode circuit structure, a large gain can be achieved. However, since there are many stacked transistors, a large power consumption and a large power supply voltage may also be required. That is, the designer can implement the P-type transistor differential amplifying unit 220 , the P-type transistor replica differential input unit 240 , the N-type transistor replica differential input unit 230 , and the N-type transistor differential amplifying unit 250 with appropriate structures according to actual needs. .

综上所述,本申请的实施例所提供的放大电路、相关芯片及电子装置可以利用互补的单级输入共源放大器组来提供增益,并通过与共源放大器并联的电流分支电路及电流平衡单元来平衡共源放大器组的电流,因此也可保持输出端电流稳定不变,从而减少对电荷泵的工作点的影响。To sum up, the amplifying circuits, related chips and electronic devices provided by the embodiments of the present application can utilize complementary single-stage input common-source amplifier groups to provide gain, and use a current branch circuit and a current balancing unit connected in parallel with the common-source amplifiers to provide gain. To balance the current of the common source amplifier group, it can also keep the output current stable, thereby reducing the impact on the operating point of the charge pump.

上文的叙述简要地提出了本申请某些实施例之特征,而使得本申请所属技术领域具有通常知识者能够更全面地理解本揭示内容的多种态样。本申请所属技术领域具有通常知识者当可明了,其可轻易地利用本揭示内容作为基础,来设计或更动其他工艺与结构,以实现与此处所述之实施方式相同的目的和/或达到相同的优点。本申请所属技术领域具有通常知识者应当明白,这些均等的实施方式仍属于本揭示内容之精神与范围,且其可进行各种变更、替代与更动,而不会悖离本揭示内容之精神与范围。The foregoing description briefly sets forth features of certain embodiments of the application, so that those skilled in the art to which this application pertains can more fully understand the various aspects of the present disclosure. It should be apparent to those skilled in the art to which this application pertains that they can readily use the present disclosure as a basis to design or modify other processes and structures for carrying out the same purposes and/or of the embodiments described herein achieve the same advantages. Those with ordinary knowledge in the technical field to which this application belongs should understand that these equivalent embodiments still belong to the spirit and scope of the present disclosure, and various changes, substitutions and alterations can be made without departing from the spirit of the present disclosure. with scope.

Claims (18)

1. An amplification circuit, comprising:
the P-type transistor differential amplification unit is used for receiving a first input voltage signal and a second input voltage signal;
an N-type transistor differential amplification unit for receiving the first input voltage signal and the second input voltage signal;
the P-type transistor copies a differential input unit for receiving the first input voltage signal and the second input voltage signal;
the N-type transistor copying differential input unit is used for receiving the first input voltage signal and the second input voltage signal;
the current balancing unit is used for balancing the currents generated by the P-type transistor differential amplification unit and the N-type transistor differential amplification unit;
a bias unit for providing a first bias current to the P-type transistor differential amplifier unit and the N-type transistor replica differential input unit together, and providing a second bias current to the P-type transistor replica differential input unit and the N-type transistor differential amplifier unit together; and
the output unit is used for generating output end current according to a plurality of current signals generated by the P-type transistor differential amplification unit and the N-type transistor differential amplification unit;
wherein:
the current value of the first bias current is the same as that of the second bias current; and
when the common-mode voltage of the first input voltage signal and the second input voltage signal changes, the current changes correspondingly generated by the P-type transistor differential amplification unit and the P-type transistor replica differential input unit and the current changes correspondingly generated by the N-type transistor replica differential input unit and the N-type transistor differential amplification unit have the same change amount and the opposite change direction, so that the output end current generated by the output unit is kept stable.
2. The amplification circuit of claim 1, wherein the bias unit comprises:
a first current mirror for generating a first replica current according to a received reference current; and
a second current mirror including a plurality of P-type transistors for generating the first bias current according to the first replica current; and
and a third current mirror including a plurality of N-type transistors for generating the second bias current according to the first replica current.
3. The amplification circuit of claim 2, wherein:
the first current mirror includes:
a first N-type transistor having a first terminal, a second terminal, and a control terminal, the first terminal of the first N-type transistor being configured to receive the reference current, the second terminal of the first N-type transistor being coupled to a ground voltage, and the control terminal of the first N-type transistor being coupled to the first terminal of the first N-type transistor; and
a second N-type transistor having a first terminal, a second terminal, and a control terminal, the second terminal of the second N-type transistor being coupled to the ground voltage and outputting the first replica current, and the control terminal of the second N-type transistor being coupled to the control terminal of the first N-type transistor;
the second current mirror includes:
a first P-type transistor having a first terminal, a second terminal, and a control terminal, the first terminal of the first P-type transistor being coupled to a power supply voltage, the second terminal of the first P-type transistor being coupled to the first terminal of the second N-type transistor, and the control terminal of the first P-type transistor being coupled to the second terminal of the first P-type transistor;
a second P-type transistor having a first terminal, a second terminal, and a control terminal, the first terminal of the second P-type transistor being coupled to the power voltage, and the control terminal of the second P-type transistor being coupled to the control terminal of the first P-type transistor; and
a third P-type transistor having a first terminal, a second terminal, and a control terminal, the first terminal of the third P-type transistor being coupled to the power voltage, the second terminal of the third P-type transistor being configured to output the first bias current, and the control terminal of the third P-type transistor being coupled to the control terminal of the second P-type transistor; and
the third current mirror includes:
a third N-type transistor having a first terminal, a second terminal, and a control terminal, the first terminal of the third N-type transistor being coupled to the second terminal of the second P-type transistor, the second terminal of the third N-type transistor being coupled to the ground voltage, and the control terminal of the third N-type transistor being coupled to the first terminal of the third N-type transistor; and
a fourth N-type transistor having a first terminal, a second terminal, and a control terminal, the first terminal of the fourth N-type transistor being configured to provide the second bias current, the second terminal of the fourth N-type transistor being coupled to the ground voltage, and the control terminal of the fourth N-type transistor being coupled to the control terminal of the third N-type transistor.
4. The amplifying circuit as set forth in claim 3, wherein the P-type transistor differential amplifying unit includes:
a fourth P-type transistor having a first terminal, a second terminal, and a control terminal, the first terminal of the fourth P-type transistor being coupled to the second terminal of the third P-type transistor, and the control terminal of the fourth P-type transistor being configured to receive the first input voltage signal;
a fifth P-type transistor having a first terminal, a second terminal, and a control terminal, the first terminal of the fifth P-type transistor being coupled to the second terminal of the third P-type transistor, and the control terminal of the fifth P-type transistor being configured to receive the second input voltage signal;
a sixth N-type transistor having a first terminal, a second terminal, and a control terminal, the first terminal of the sixth N-type transistor being coupled to the second terminal of the fourth P-type transistor, the second terminal of the sixth N-type transistor being coupled to the ground voltage, and the control terminal of the sixth N-type transistor being coupled to the first terminal of the sixth N-type transistor; and
a seventh N-type transistor having a first terminal, a second terminal, and a control terminal, the first terminal of the seventh N-type transistor being coupled to the second terminal of the fifth P-type transistor, the second terminal of the seventh N-type transistor being coupled to the ground voltage, and the control terminal of the seventh N-type transistor being coupled to the first terminal of the seventh N-type transistor.
5. The amplification circuit of claim 4, wherein the P-type transistor replica differential input cell comprises:
a sixth P-type transistor having a first terminal, a second terminal, and a control terminal, the second terminal of the sixth P-type transistor being coupled to the first terminal of the fourth N-type transistor, and the control terminal of the sixth P-type transistor being configured to receive the first input voltage signal; and
a seventh P-type transistor having a first end, a second end, and a control end, the first end of the seventh P-type transistor being coupled to the first end of the sixth P-type transistor, the second end of the seventh P-type transistor being coupled to the first end of the fourth N-type transistor, and the control end of the seventh P-type transistor being configured to receive the second input voltage signal.
6. The amplification circuit of claim 5, wherein:
the second current mirror further comprises an eighth P-type transistor having a first terminal, a second terminal, and a control terminal, the first terminal of the eighth P-type transistor being coupled to the power voltage, the second terminal of the eighth P-type transistor being coupled to the first terminal of the sixth P-type transistor, and the control terminal of the eighth P-type transistor being coupled to the control terminal of the second P-type transistor; and
the width-to-length ratio of the third P-type transistor is twice the width-to-length ratio of the first P-type transistor, and the channel width-to-length of the eighth P-type transistor is equal to the width-to-length ratio of the first P-type transistor.
7. The amplification circuit of claim 4, wherein the N-type transistor differential amplification unit comprises:
a ninth P-type transistor having a first terminal, a second terminal, and a control terminal, the first terminal of the ninth P-type transistor being coupled to the power voltage, and the control terminal of the ninth P-type transistor being coupled to the second terminal of the ninth P-type transistor;
a tenth P-type transistor having a first terminal, a second terminal, and a control terminal, the first terminal of the tenth P-type transistor being coupled to the power voltage, and the control terminal of the tenth P-type transistor being coupled to the second terminal of the tenth P-type transistor;
an eighth N-type transistor having a first terminal, a second terminal, and a control terminal, the first terminal of the eighth N-type transistor being coupled to the second terminal of the ninth P-type transistor, the second terminal of the eighth N-type transistor being coupled to the first terminal of the fourth N-type transistor, and the control terminal of the eighth N-type transistor being configured to receive the first input voltage signal; and
a ninth N-type transistor having a first terminal, a second terminal, and a control terminal, the first terminal of the ninth N-type transistor being coupled to the second terminal of the tenth P-type transistor, the second terminal of the ninth N-type transistor being coupled to the first terminal of the fourth N-type transistor, and the control terminal of the ninth N-type transistor being configured to receive the second input voltage signal.
8. The amplification circuit of claim 7, wherein the N-type transistor replica differential input cell comprises:
a tenth N-type transistor having a first terminal, a second terminal, and a control terminal, the first terminal of the tenth N-type transistor being coupled to the second terminal of the third P-type transistor, and the control terminal of the tenth N-type transistor being configured to receive the first input voltage signal; and
an eleventh N-type transistor having a first terminal, a second terminal, and a control terminal, the first terminal of the eleventh N-type transistor being coupled to the second terminal of the third P-type transistor, the second terminal of the eleventh N-type transistor being coupled to the second terminal of the tenth N-type transistor, and the control terminal of the eleventh P-type transistor being configured to receive the second input voltage signal.
9. The amplification circuit of claim 8, wherein:
the third current mirror further comprises a fifth N-type transistor having a first terminal, a second terminal, and a control terminal, the first terminal of the fifth N-type transistor being coupled to the second terminal of the tenth N-type transistor, the second terminal of the fifth N-type transistor being coupled to the ground voltage, and the control terminal of the fifth N-type transistor being coupled to the control terminal of the third N-type transistor; and
the width-to-length ratio of the fourth N-type transistor is twice the width-to-length ratio of the third N-type transistor, and the width-to-length ratio of the fifth N-type transistor is equal to the width-to-length ratio of the third N-type transistor.
10. The amplification circuit of claim 7, wherein the current balancing unit comprises:
an eleventh P-type transistor having a first terminal, a second terminal, and a control terminal, the first terminal of the eleventh P-type transistor being coupled to the power voltage, the second terminal of the eleventh P-type transistor being coupled to the first terminal of the seventh N-type transistor, and the control terminal of the eleventh P-type transistor being coupled to the control terminal of the tenth P-type transistor; and
a twelfth N-type transistor having a first terminal, a second terminal, and a control terminal, the first terminal of the twelfth N-type transistor being coupled to the second terminal of the ninth P-type transistor, the second terminal of the twelfth N-type transistor being coupled to the ground voltage, and the control terminal of the twelfth N-type transistor being coupled to the control terminal of the sixth N-type transistor.
11. The amplification circuit of claim 10, wherein:
the width-to-length ratio of the eleventh P-type transistor is equal to the width-to-length ratio of the tenth P-type transistor; and
the width-to-length ratio of the twelve N-type transistors is equal to the width-to-length ratio of the sixth N-type transistor.
12. The amplification circuit of claim 7, wherein the output unit comprises:
a twelfth P-type transistor having a first terminal, a second terminal, and a control terminal, the first terminal of the twelfth P-type transistor being coupled to the power voltage, the second terminal of the twelfth P-type transistor being coupled to an output terminal of the amplifying circuit, and the control terminal of the twelfth P-type transistor being coupled to the control terminal of the ninth P-type transistor; and
a thirteenth N-type transistor having a first terminal, a second terminal, and a control terminal, the first terminal of the thirteenth N-type transistor being coupled to the output terminal, the second terminal of the thirteenth N-type transistor being coupled to the ground voltage, and the control terminal of the thirteenth N-type transistor being coupled to the control terminal of the seventh N-type transistor.
13. The amplification circuit of claim 12, wherein:
the width-to-length ratio of the twelve P-type transistors is four times that of the ninth P-type transistor; and
the thirteen N-type transistors have a width-to-length ratio four times that of the seventh N-type transistor.
14. The amplification circuit of claim 1, wherein at least one of the P-type transistor differential amplification unit, the P-type transistor replica differential input unit, the N-type transistor replica differential input unit, and the N-type transistor differential amplification unit comprises a folded differential pair structure.
15. The amplification circuit of claim 1, wherein at least one of the P-type transistor differential amplification unit and the N-type transistor differential amplification unit comprises a cascode amplifier.
16. The amplifying circuit of claim 1, further comprising a buffer feedback unit coupled to the P-type transistor differential amplifying unit, the N-type transistor differential amplifying unit and the current balancing unit for stabilizing the current generated by the P-type transistor differential amplifying unit and the N-type transistor differential amplifying unit and/or increasing the gain of the amplifying circuit.
17. A chip, comprising:
an amplifying circuit and a power supply circuit according to any one of claims 1 to 16, the power supply circuit being connected to the amplifying circuit, the power supply circuit supplying power to the amplifying circuit.
18. An electronic device, comprising:
the chip and housing of claim 17, the chip being disposed inside the housing.
CN202111597731.5A 2021-12-24 2021-12-24 Amplifying circuits, related chips and electronic devices Pending CN114448369A (en)

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