CN114460399B - Inverter IGBT module fault determination method and system based on condition monitoring - Google Patents
Inverter IGBT module fault determination method and system based on condition monitoring Download PDFInfo
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Abstract
本发明公开了一种基于状态监测的逆变器IGBT模块故障判定方法及系统，属于电力电子设备核心器件可靠性技术领域，包括：测量逆变器IGBT输出特性曲线，确定交点电流值Iint；执行故障监测策略，在IGBT空闲时刻，实施IGBT老化监测；在IGBT工作时刻，实施IGBT故障监测；向逆变器IGBT内注入与交点电流值相等的测试电流，测定其对应的导通压降Vint，并据此判断IGBT的老化失效；通过集成于逆变器控制器的计时算法检测逆变器IGBT的电流过零点时间Tp，并据此判断IGBT的故障失效；最终，综合考虑IGBT老化指标与故障指标，精确判定IGBT故障原因。
The present invention discloses an inverter IGBT module fault determination method and system based on state monitoring, belonging to the technical field of reliability of core components of power electronic equipment, comprising: measuring an inverter IGBT output characteristic curve to determine an intersection current value I int ; executing a fault monitoring strategy to implement IGBT aging monitoring at an IGBT idle time; implementing IGBT fault monitoring at an IGBT working time; injecting a test current equal to the intersection current value into the inverter IGBT to measure its corresponding on-state voltage drop V int , and judging the aging failure of the IGBT accordingly; detecting the current zero-crossing time T p of the inverter IGBT through a timing algorithm integrated in an inverter controller, and judging the failure of the IGBT accordingly; finally, comprehensively considering the IGBT aging index and the fault index to accurately determine the cause of the IGBT fault.
Description
Technical Field
The invention belongs to the technical field of reliability of core devices of power electronic equipment, and particularly relates to an inverter IGBT module fault cause accurate judgment method and system based on state monitoring.
Background
In recent years, the application fields of the inverter are expanding continuously, such as the fields of solar power generation, electric automobiles, aerospace power systems and the like. Compared with other power electronic devices, the IGBT power module has the advantages of high input impedance, low driving power, simple control circuit, low switching loss, high working frequency and the like, and is widely applied to inverters. The application field has harsh working conditions and strict requirements on the reliability of the IGBT.
Inverter IGBT modules typically operate in complex, harsh environments and are prone to failure. The reasons for the failure of the IGBT are mainly divided into two types, namely, the failure caused by the internal aging of the IGBT, such as the breakage of bonding wires and the falling of a solder layer caused by thermal stress impact, and the failure caused by the external aging of the IGBT, such as the failure of other external circuits, such as the damage of a driving circuit, the loss of driving signals, the failure of a PCB (printed circuit board) and the like. The IGBT external fault belongs to an unexpected failure, which is difficult to predict, and is shown as an immediate fault. The IGBT aging failure is a long-term aging failure process, so that the process is slower, predictive and inevitable. But eventually will also lead to failure of the IGBT if no intervention is done. If the IGBT power module has the faults, the normal operation of the inverter is seriously influenced or even damaged, and accidents such as power failure, operation termination, traffic paralysis and the like can be caused, so that huge economic loss is brought.
The existing fault diagnosis method only can judge that the IGBT has faults, but cannot distinguish whether the faults are caused by internal aging of the IGBT or an external circuit, which causes great trouble to overhauling and operation of an IGBT module of the inverter.
Disclosure of Invention
Aiming at the defects or improvement demands of the prior art, the invention provides an inverter IGBT module fault accurate judging method and system based on state monitoring, which can accurately judge the IGBT fault reason.
To achieve the above object, according to one aspect of the present invention, there is provided an inverter IGBT module failure determination method based on state monitoring, including:
Measuring an IGBT output characteristic curve of the inverter, and determining an intersection point current value;
Performing IGBT aging monitoring at the idle time of the IGBT, and performing IGBT fault monitoring at the working time of the IGBT;
When the IGBT aging monitoring is implemented, a test current which is equal to the intersection point current value is injected into the IGBT of the inverter, the corresponding conduction voltage drop is measured, the conduction voltage drop is used as an aging monitoring parameter of the IGBT, and the conduction voltage drop is compared with an aging threshold value to give a corresponding IGBT aging index;
When the IGBT fault monitoring is implemented, detecting the current zero crossing point time of the IGBT of the inverter, taking the current zero crossing point time as a fault monitoring parameter of the IGBT, and comparing the current zero crossing point time with a fault threshold value to give a corresponding IGBT fault index;
And comprehensively considering the IGBT aging index and the IGBT fault index, and accurately judging the cause of the IGBT fault.
In some alternative embodiments, the IGBT aging monitoring is implemented at the idle time of the IGBT, and the IGBT fault monitoring is implemented at the working time of the IGBT, comprising:
When the driving signal of the IGBT is low level or no signal, the driving signal is regarded as the idle time of the IGBT;
when the driving signal of the IGBT is at a high level, the driving signal is regarded as the working time of the IGBT, and the IGBT fault monitoring is implemented at the working time of the IGBT.
In some alternative embodiments, comparing the on-voltage drop with the aging threshold gives a corresponding IGBT aging indicator, including:
In the IGBT aging monitoring process, the conduction voltage drop exceeds an aging threshold value, the IGBT aging index A n is set to m, or the IGBT aging index A n is set to n, wherein the aging threshold value is obtained by performing aging test after injecting current with the same size into the same type of IGBT module.
In some alternative embodiments, the comparing the current zero crossing time with the fault threshold gives a corresponding IGBT fault indicator, including:
In the IGBT fault monitoring process, the current zero crossing time exceeds a fault threshold value, the IGBT fault index F n is set to p, or F n is set to q, wherein the fault threshold value is obtained by testing the same type inverter under the same working condition.
In some optional embodiments, the comprehensively considering the IGBT aging index and the IGBT fault index, accurately determining the IGBT fault cause includes:
when a n =n and F n =q, it is determined that the inverter IGBT module does not fail;
When a n =n and F n =p, determining that the failure of the inverter IGBT module is located outside, independent of the IGBT module itself;
when a n =m and F n =q, determining that the inverter IGBT module is in an aging failure critical state;
When a n =m and F n =p, it is determined that the inverter IGBT module failure is located inside.
According to another aspect of the present invention, there is provided an inverter IGBT module failure determination system based on state monitoring, including:
The fault monitoring control module is used for triggering IGBT aging monitoring at the idle moment of the IGBT, and triggering IGBT fault monitoring at the working moment of the IGBT;
the aging monitoring module is used for injecting a test current equal to the intersection point current value into the IGBT of the inverter when the IGBT aging monitoring is implemented, measuring the corresponding conduction voltage drop, taking the conduction voltage drop as an aging monitoring parameter of the IGBT, and comparing the conduction voltage drop with an aging threshold value to give a corresponding IGBT aging index;
The fault monitoring module is used for monitoring the fault state of the IGBT module, collecting fault monitoring parameter current zero crossing time, and comparing the current zero crossing time with a fault threshold value to give corresponding IGBT fault indexes;
And the accurate fault judging module is used for comprehensively considering the IGBT aging index and the IGBT fault index and accurately judging the cause of the IGBT fault.
In some alternative embodiments, the fault monitoring control module is configured to identify an idle time of the IGBT when the driving signal of the IGBT is at a low level or no signal, implement IGBT aging monitoring at the idle time of the IGBT, identify an operating time of the IGBT when the driving signal of the IGBT is at a high level, and implement IGBT fault monitoring at the operating time of the IGBT.
In some optional embodiments, the aging monitoring module is configured to, when performing IGBT aging monitoring, inject a test current equal to the intersection current value into the inverter IGBT, determine a corresponding conduction voltage drop, and use the conduction voltage drop as an aging monitoring parameter of the IGBT, and set an IGBT aging index a n to m, or set a n to n, where the aging threshold is obtained by performing an aging test after injecting a current of the same size into the IGBT module of the same type.
In some optional embodiments, the fault monitoring module is configured to monitor a fault state of the IGBT module, collect a fault monitoring parameter, i.e. a current zero crossing time, and set the IGBT fault index F n to p, or set F n to q, where the fault threshold is obtained by testing the same type inverter under the same working condition.
In some alternative embodiments, the precise fault judging module is used for judging that the inverter IGBT module does not generate faults when A n = n and F n = q, judging that the inverter IGBT module faults are located outside and irrelevant to the IGBT module when A n = n and F n = p, judging that the inverter IGBT module is in an aging failure critical state when A n = m and F n = q, and judging that the inverter IGBT module faults are located inside when A n = m and F n = p.
In general, the above technical solutions conceived by the present invention, compared with the prior art, enable the following beneficial effects to be obtained:
The method comprises the steps of determining an intersection point current value I int by measuring an IGBT output characteristic curve of an inverter, executing a fault monitoring strategy, conducting IGBT aging monitoring at the idle moment of the IGBT, conducting IGBT fault monitoring at the working moment of the IGBT, injecting a test current equal to the intersection point current value into the inverter IGBT, measuring a corresponding conduction voltage drop V int, judging the aging failure of the IGBT according to the test current, detecting the current zero crossing point time T p of the inverter IGBT by a driving fault diagnosis algorithm integrated in an inverter controller, judging the failure of the IGBT according to the current zero crossing point time T p, and finally comprehensively considering an IGBT aging index and a failure index to accurately judge the failure reason of the IGBT. The influence of internal and external factors of the IGBT module on the fault of the IGBT module is comprehensively considered, and the specific reason of the fault of the IGBT module, namely whether the fault comes from the inside or the outside of the module, can be accurately distinguished. The system is convenient to maintain in a targeted manner when the system can be stopped, is beneficial to quick maintenance, shortens the stopping time and improves the reliability of the inverter. And the monitoring of the whole life cycle (health, aging and faults) of the IGBT module of the inverter can be realized under the condition that the working state of the inverter is not influenced, and the implementation feasibility is higher.
Drawings
Fig. 1 is a schematic flow chart of a fault determination method for an inverter IGBT module based on state monitoring according to an embodiment of the invention;
fig. 2 is a schematic diagram of an inverter IGBT module fault determination system based on state monitoring according to an embodiment of the invention.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention. In addition, the technical features of the embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
Fig. 1 is a schematic flow chart of a fault determination method for an inverter IGBT module based on state monitoring according to an embodiment of the invention, including the following steps:
s1, measuring an output characteristic curve of an IGBT module of an inverter, and determining an intersection point current value I int;
s2, executing a fault monitoring strategy, and executing IGBT aging monitoring at the idle moment of the IGBT;
in the embodiment of the present invention, step S2 may be implemented by:
S2.1, when the driving signal of the IGBT is a low level V L or no signal, the IGBT is regarded as idle time of the IGBT, the IGBT aging monitoring is implemented at the idle time of the IGBT, the aging process of the IGBT module is quite long for decades, the uninterrupted long-term aging monitoring is unfavorable for implementation in actual engineering due to the fact that the design life of the IGBT module is long, and in addition, the working characteristics of the inverter IGBT determine that more idle time (including the time of the IGBT in a redundant working state and the time of the IGBT in an overhauling state) exists in the IGBT module. At idle time, the test current is injected into the IGBT to perform aging monitoring, so that the observation requirement on the aging state of the IGBT is met, the normal operation of the inverter is not interfered, and the IGBT has economy and feasibility;
S2.2, when the driving signal of the IGBT is a high level V H, determining the working time of the IGBT, performing IGBT fault monitoring at the working time of the IGBT, detecting the current zero crossing point time T p of the IGBT module of the inverter through a diagnosis algorithm integrated in the controller, and judging the open circuit fault failure of the IGBT according to the current zero crossing point time T p, wherein the method is integrated in a driver of the inverter without increasing extra hardware cost and generating interference on the working state.
S3, injecting a test current with the same current value as the intersection point into the IGBT of the inverter, measuring a corresponding conduction voltage drop V int, taking the test current as an aging monitoring parameter of the IGBT, and comparing the test current with an aging threshold V a to give a corresponding aging index A n;
In the IGBT aging monitoring process, the aging monitoring parameter V int exceeds the aging threshold V a, the IGBT aging index A n is set to 1, otherwise A n is set to 0, and the aging threshold V a is obtained by carrying out aging test after injecting current with the same size into the same type IGBT module in advance.
S4, detecting the current zero crossing point time T p of the IGBT of the inverter through a diagnosis algorithm integrated in the controller, taking the current zero crossing point time T p as a fault monitoring parameter of the IGBT, and comparing the fault monitoring parameter with a fault threshold T f to give a corresponding IGBT fault index F n;
The diagnostic algorithm may be an algorithm for detecting the current zero crossing time T p of the inverter IGBT in the prior art, which is not limited in uniqueness by the embodiment of the present invention.
In the IGBT fault monitoring process, the fault monitoring parameter T p exceeds the fault threshold T f, the IGBT fault index F n is set to 1, otherwise F n is set to 0, and the fault threshold T f is obtained by testing the same type inverter under the same working condition in advance.
S5, comprehensively considering the IGBT aging index and the fault index, and accurately judging the IGBT fault reason.
In the embodiment of the present invention, step S5 may be implemented by:
s5.1. when a n =0 and F n =0, determining that the inverter IGBT module has not failed;
S5.2, when A n =0 and F n =1, judging that the fault of the IGBT module of the inverter is positioned outside, namely the fault is caused by failure of external driving of the IGBT, a PCB and the like, and is irrelevant to the IGBT module;
S5.3, when A n =1 and F n =0, judging that the IGBT module of the inverter is in an aging failure critical state;
S5.4. when a n =1 and F n =1, it is determined that the inverter IGBT module failure is internal, i.e. the failure is caused by the IGBT itself aging failure.
The specific values assigned by a n and F n are not limited to 0 or 1, but may be other values, as long as they correspond to the assignment in the determination process in step S5, and the embodiment of the present invention is not limited uniquely.
In order to implement the method of the foregoing embodiment, in another embodiment of the present invention, there is further provided an inverter IGBT module fault accurate determination system based on state monitoring, as shown in fig. 2, the system includes:
The fault monitoring control module is used for executing a fault monitoring strategy, triggering IGBT aging monitoring at the idle moment of the IGBT, and triggering IGBT fault monitoring at the working moment of the IGBT;
The aging monitoring module is used for injecting a test current equal to the intersection point current value into the IGBT of the inverter when the IGBT aging monitoring is implemented, measuring the corresponding conduction voltage drop V int, taking the test current as the aging monitoring parameter of the IGBT, and comparing the test current with the aging threshold V a to give a corresponding aging index A n;
The fault monitoring module is used for monitoring the fault state of the IGBT module, collecting the fault monitoring parameter current zero crossing time T p, and comparing the fault monitoring parameter current zero crossing time T p with a fault threshold T f to give a corresponding IGBT fault index F n;
The accurate fault judging module is used for comprehensively considering the IGBT ageing index A n and the fault index F n and accurately judging the fault reason of the IGBT.
The specific implementation of each module may refer to the description of the above method embodiment, and this embodiment will not be repeated.
It should be noted that each step/component described in the present application may be split into more steps/components, or two or more steps/components or part of operations of the steps/components may be combined into new steps/components, according to the implementation needs, to achieve the object of the present application.
It will be readily appreciated by those skilled in the art that the foregoing description is merely a preferred embodiment of the invention and is not intended to limit the invention, but any modifications, equivalents, improvements or alternatives falling within the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (4)
1. The inverter IGBT module fault judging method based on state monitoring is characterized by comprising the following steps of:
Measuring an IGBT output characteristic curve of the inverter, and determining an intersection point current value;
Performing IGBT aging monitoring at the idle time of the IGBT, and performing IGBT fault monitoring at the working time of the IGBT;
When the IGBT aging monitoring is implemented, a test current which is equal to the intersection point current value is injected into the IGBT of the inverter, the corresponding conduction voltage drop is measured, the conduction voltage drop is used as an aging monitoring parameter of the IGBT, and the conduction voltage drop is compared with an aging threshold value to give a corresponding IGBT aging index;
When the IGBT fault monitoring is implemented, detecting the current zero crossing point time of the IGBT of the inverter, taking the current zero crossing point time as a fault monitoring parameter of the IGBT, and comparing the current zero crossing point time with a fault threshold value to give a corresponding IGBT fault index;
comprehensively considering IGBT aging indexes and IGBT fault indexes, and accurately judging the cause of the IGBT fault;
Comparing the conduction voltage drop with the aging threshold value gives corresponding IGBT aging indexes, including:
In the IGBT aging monitoring process, the conduction voltage drop exceeds an aging threshold value, the IGBT aging index A n is set to m, or else A n is set to n, wherein the aging threshold value is obtained by performing aging test after injecting current with the same size into the same type of IGBT module;
Comparing the current zero crossing time with a fault threshold value to give corresponding IGBT fault indexes comprises the following steps:
In the IGBT fault monitoring process, the current zero crossing time exceeds a fault threshold value, setting the IGBT fault index F n to p, otherwise setting F n to q, wherein the fault threshold value is obtained by testing the same type inverter under the same working condition;
The comprehensive consideration of the IGBT aging index and the IGBT fault index accurately judges the cause of the IGBT fault, and comprises the following steps:
when a n =n and F n =q, it is determined that the inverter IGBT module does not fail;
When a n =n and F n =p, determining that the failure of the inverter IGBT module is located outside, independent of the IGBT module itself;
when a n =m and F n =q, determining that the inverter IGBT module is in an aging failure critical state;
When a n =m and F n =p, it is determined that the inverter IGBT module failure is located inside.
2. The method of claim 1, wherein performing IGBT burn-in monitoring at IGBT idle times and performing IGBT fault monitoring at IGBT operating times comprises:
When the driving signal of the IGBT is low level or no signal, the driving signal is regarded as the idle time of the IGBT;
when the driving signal of the IGBT is at a high level, the driving signal is regarded as the working time of the IGBT, and the IGBT fault monitoring is implemented at the working time of the IGBT.
3. An inverter IGBT module fault determination system based on state monitoring, which is characterized by comprising:
The fault monitoring control module is used for triggering IGBT aging monitoring at the idle moment of the IGBT, and triggering IGBT fault monitoring at the working moment of the IGBT;
the aging monitoring module is used for injecting a test current equal to the intersection point current value into the IGBT of the inverter when the IGBT aging monitoring is implemented, measuring the corresponding conduction voltage drop, taking the conduction voltage drop as an aging monitoring parameter of the IGBT, and comparing the conduction voltage drop with an aging threshold value to give a corresponding IGBT aging index;
The fault monitoring module is used for monitoring the fault state of the IGBT module, collecting fault monitoring parameter current zero crossing time, and comparing the current zero crossing time with a fault threshold value to give corresponding IGBT fault indexes;
The accurate fault judging module is used for comprehensively considering the IGBT aging index and the IGBT fault index and accurately judging the cause of the IGBT fault;
The aging monitoring module is used for injecting a test current equal to the current value of the intersection point into the IGBT of the inverter when the IGBT aging monitoring is implemented, measuring the corresponding conduction voltage drop, taking the conduction voltage drop as an aging monitoring parameter of the IGBT, setting the IGBT aging index A n to m, or setting A n to n, wherein the aging threshold is obtained by carrying out aging test after injecting the current with the same size into the IGBT module of the same type;
The fault monitoring module is used for monitoring the fault state of the IGBT module, collecting fault monitoring parameter current zero crossing time, wherein the current zero crossing time exceeds a fault threshold value, setting an IGBT fault index F n to p, or setting F n to q, and the fault threshold value is obtained by testing the same type inverter under the same working condition;
The accurate fault judging module is used for judging that the inverter IGBT module does not have faults when A n = n and F n = q, judging that the inverter IGBT module has faults outside and is irrelevant to the IGBT module when A n = n and F n = p, judging that the inverter IGBT module is in an aging failure critical state when A n = m and F n = q, and judging that the inverter IGBT module has faults inside when A n = m and F n = p.
4. The system of claim 3, wherein the fault monitoring control module is configured to identify an idle time of the IGBT when the driving signal of the IGBT is low or no, to implement IGBT burn-in monitoring at the idle time of the IGBT, to identify an operating time of the IGBT when the driving signal of the IGBT is high, and to implement IGBT fault monitoring at the operating time of the IGBT.
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| CN105337523B (en) * | 2015-11-11 | 2018-01-02 | 合肥工业大学 | NPC types three-level inverter reliability on-line monitoring system and method |
| CN106168647B (en) * | 2016-05-27 | 2019-04-02 | 重庆大学 | IGBT ageing state detection system |
| JP6223612B1 (en) * | 2017-02-22 | 2017-11-01 | 三菱電機株式会社 | Power conversion control device |
| DE102018131644A1 (en) * | 2018-12-10 | 2020-06-10 | Technische Universität Darmstadt | Measuring device, system and method for detecting degradation of at least one electrical contact point |
| CN111371293B (en) * | 2020-03-10 | 2024-06-04 | 北京交通大学 | IGBT driving circuit with state monitoring and fault recording functions |
| CN113253110A (en) * | 2021-05-12 | 2021-08-13 | 中国第一汽车股份有限公司 | Motor monitoring method and device, electronic equipment and storage medium |
| CN113534000B (en) * | 2021-07-05 | 2022-09-13 | 合肥工业大学 | New energy automobile driving system inverter and current sensor fault diagnosis method |
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| CN112906333A (en) * | 2021-01-22 | 2021-06-04 | 武汉大学 | Photovoltaic inverter IGBT junction temperature online correction method and system considering aging |
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