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CN114584085A - Amplifier circuit and electronic device - Google Patents

Amplifier circuit and electronic device Download PDF

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Publication number
CN114584085A
CN114584085A CN202011406440.9A CN202011406440A CN114584085A CN 114584085 A CN114584085 A CN 114584085A CN 202011406440 A CN202011406440 A CN 202011406440A CN 114584085 A CN114584085 A CN 114584085A
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transistor
circuit
terminal
amplifier circuit
control
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刘利书
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Midea Group Co Ltd
Guangdong Midea White Goods Technology Innovation Center Co Ltd
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Midea Group Co Ltd
Guangdong Midea White Goods Technology Innovation Center Co Ltd
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56Modifications of input or output impedances, not otherwise provided for
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only

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Abstract

本申请涉及放大器技术领域,公开了一种放大器电路、电子设备,该放大器电路包括:推挽电路和放大电路,其中,推挽电路包括:第一晶体管、第二晶体管和电平移位电路,第一晶体管的第一端输入电源信号,第一晶体管的第二端用于输出;第二晶体管的第一端连接第一晶体管的第二端,第二晶体管的第二端接地;电平移位电路,电平移位电路的第一端连接第一晶体管的控制端,电平移位电路的第二端连接第二晶体管的控制端。放大电路连接第二晶体管的控制端,用于在输入信号的作用下产生放大信号,并将所述放大信号输入至所述第二晶体管的控制端。通过上述方式,能够提升放大器电路对输入信号处理的增益和放大速度。

Figure 202011406440

The present application relates to the technical field of amplifiers, and discloses an amplifier circuit and an electronic device. The amplifier circuit includes a push-pull circuit and an amplifier circuit, wherein the push-pull circuit includes a first transistor, a second transistor, and a level shift circuit. The first end of a transistor is input with a power supply signal, and the second end of the first transistor is used for output; the first end of the second transistor is connected to the second end of the first transistor, and the second end of the second transistor is grounded; the level shift circuit , the first end of the level shift circuit is connected to the control end of the first transistor, and the second end of the level shift circuit is connected to the control end of the second transistor. The amplifying circuit is connected to the control terminal of the second transistor for generating an amplified signal under the action of the input signal, and inputting the amplified signal to the control terminal of the second transistor. In the above manner, the gain and amplification speed of the input signal processing by the amplifier circuit can be improved.

Figure 202011406440

Description

放大器电路、电子设备Amplifier circuits, electronic equipment

技术领域technical field

本申请涉及放大器技术领域,特别是涉及一种放大器电路、电子设备。The present application relates to the technical field of amplifiers, and in particular, to an amplifier circuit and an electronic device.

背景技术Background technique

在模拟电路芯片中,放大器有单管放大器,如共源(Common Source)放大器,共栅(Common Gate)放大器;多管放大器的种类有推挽放大器、差分放大器等,其中推挽结构放大器因为其结构简单,增益大,成为热门的研究方向。In analog circuit chips, the amplifiers include single-tube amplifiers, such as Common Source amplifiers and Common Gate amplifiers; the types of multi-tube amplifiers include push-pull amplifiers, differential amplifiers, etc. Among them, the push-pull structure amplifier is due to its The structure is simple and the gain is large, and it has become a popular research direction.

目前的方案中,没有实现单管放大器和推挽放大器的最优性能,增益和速度不够。In the current scheme, the optimal performance of the single-tube amplifier and the push-pull amplifier is not achieved, and the gain and speed are insufficient.

发明内容SUMMARY OF THE INVENTION

为了解决上述问题,本申请提供放大器电路、电子设备,能够提升放大器电路对输入信号处理的增益和放大速度。In order to solve the above problems, the present application provides an amplifier circuit and an electronic device, which can improve the gain and amplification speed of the input signal processing by the amplifier circuit.

本申请采用的一种技术方案是提供一种放大器电路,该放大器电路包括:推挽电路,包括:第一晶体管,第一晶体管的第一端输入电源信号,第一晶体管的第二端用于输出;第二晶体管,第二晶体管的第一端连接第一晶体管的第二端,第二晶体管的第二端接地;电平移位电路,电平移位电路的第一端连接第一晶体管的控制端,电平移位电路的第二端连接第二晶体管的控制端;放大电路,连接第二晶体管的控制端,用于在输入信号的作用下产生放大信号,并将放大信号输入至第二晶体管的控制端。A technical solution adopted in the present application is to provide an amplifier circuit, the amplifier circuit includes a push-pull circuit, including: a first transistor, a first end of the first transistor is input with a power supply signal, and a second end of the first transistor is used for output; a second transistor, the first end of the second transistor is connected to the second end of the first transistor, and the second end of the second transistor is grounded; level shift circuit, the first end of the level shift circuit is connected to the control of the first transistor terminal, the second terminal of the level shift circuit is connected to the control terminal of the second transistor; the amplifier circuit is connected to the control terminal of the second transistor, and is used to generate an amplified signal under the action of the input signal, and input the amplified signal to the second transistor the control terminal.

其中,电平移位电路包括:第三晶体管,第三晶体管的第一端连接第一晶体管的控制端,第三晶体管的第二端连接第二晶体管的控制端;第四晶体管,第四晶体管的第一端连接第一晶体管的控制端,第四晶体管的第二端连接第二晶体管的控制端。Wherein, the level shift circuit includes: a third transistor, the first end of the third transistor is connected to the control end of the first transistor, the second end of the third transistor is connected to the control end of the second transistor; The first terminal is connected to the control terminal of the first transistor, and the second terminal of the fourth transistor is connected to the control terminal of the second transistor.

其中,放大器电路还包括恒流源,恒流源的第一端输入电源信号,恒流源的第二端连接第一晶体管的控制端。Wherein, the amplifier circuit further includes a constant current source, the first terminal of the constant current source is input with a power supply signal, and the second terminal of the constant current source is connected to the control terminal of the first transistor.

其中,放大电路包括第六晶体管和第七晶体管;其中,第六晶体管的第一端连接第七晶体管的第二端,第六晶体管的第二端接地,第六晶体管的控制端用于输入信号;第七晶体管的第一端连接第二晶体管的控制端。The amplifying circuit includes a sixth transistor and a seventh transistor; wherein the first end of the sixth transistor is connected to the second end of the seventh transistor, the second end of the sixth transistor is grounded, and the control end of the sixth transistor is used for inputting signals ; The first end of the seventh transistor is connected to the control end of the second transistor.

其中,放大器电路还包括偏置电路;偏置电路的第一端输入电源信号,偏置电路的第二端连接第五晶体管的控制端,偏置电路的第三端连接第七晶体管的控制端,偏置电路的第四端接地。The amplifier circuit further includes a bias circuit; the first end of the bias circuit is input with a power supply signal, the second end of the bias circuit is connected to the control end of the fifth transistor, and the third end of the bias circuit is connected to the control end of the seventh transistor , the fourth terminal of the bias circuit is grounded.

其中,偏置电路包括第八晶体管、第九晶体管、第十晶体管和电阻;其中,第八晶体管的第一端输入电源信号,第八晶体管的第二端连接第八晶体管的控制端和第九晶体管的控制端;第九晶体管的第一端输入电源信号,第九晶体管的第二连接第七晶体管的控制端;电阻的第一端连接第八晶体管,电阻的第二端接地;第十晶体管的第一端连接第九晶体管的第二端;第十晶体管的第二端接地,第十晶体管的控制端连接偏置电路的第三端。The bias circuit includes an eighth transistor, a ninth transistor, a tenth transistor and a resistor; wherein the first end of the eighth transistor is input with a power supply signal, and the second end of the eighth transistor is connected to the control end of the eighth transistor and the ninth transistor The control terminal of the transistor; the first terminal of the ninth transistor is input with a power supply signal, the second terminal of the ninth transistor is connected to the control terminal of the seventh transistor; the first terminal of the resistor is connected to the eighth transistor, and the second terminal of the resistor is grounded; the tenth transistor is connected to the ground; The first end of the ninth transistor is connected to the second end of the ninth transistor; the second end of the tenth transistor is grounded, and the control end of the tenth transistor is connected to the third end of the bias circuit.

其中,放大电路包括第十一晶体管和第十二晶体管;其中,第十二晶体管的第一端输入电源信号,第十二晶体管的第二端连接第十一晶体管的第一端,第十二晶体管的控制端用于输入信号,第十一晶体管的第二端连接第一晶体管的控制端。The amplifying circuit includes an eleventh transistor and a twelfth transistor; wherein the first end of the twelfth transistor is input with a power supply signal, the second end of the twelfth transistor is connected to the first end of the eleventh transistor, and the twelfth transistor is connected to the first end of the eleventh transistor. The control terminal of the transistor is used for inputting a signal, and the second terminal of the eleventh transistor is connected to the control terminal of the first transistor.

其中,放大器电路还包括第一输入电压电路;第一输入电压电路包括:第十三晶体管,第十三晶体管的第一端输入电源信号,第十三晶体管的第二端连接第十三晶体管的控制端;第十四晶体管,第十四晶体管的第一端连接第十三晶体管的第二端,第十四晶体管的第二端连接第十四晶体管的控制端和电平移位电路的第一控制端,用于向电平移位电路提供第一基准电压;第十五晶体管,第十五晶体管的第一端连接第十四晶体管的第二端,第十五晶体管的第二端接地,第十五晶体管的控制端用于接收控制信号。Wherein, the amplifier circuit further includes a first input voltage circuit; the first input voltage circuit includes: a thirteenth transistor, the first end of the thirteenth transistor inputs a power supply signal, and the second end of the thirteenth transistor is connected to the thirteenth transistor Control terminal; fourteenth transistor, the first terminal of the fourteenth transistor is connected to the second terminal of the thirteenth transistor, and the second terminal of the fourteenth transistor is connected to the control terminal of the fourteenth transistor and the first terminal of the level shift circuit The control terminal is used to provide the first reference voltage to the level shift circuit; the fifteenth transistor, the first terminal of the fifteenth transistor is connected to the second terminal of the fourteenth transistor, the second terminal of the fifteenth transistor is grounded, and the first terminal of the fifteenth transistor is connected to the ground. The control terminals of the fifteen transistors are used for receiving control signals.

其中,放大器电路还包括第二输入电压电路;第二输入电压电路包括:第十六晶体管,第十六晶体管的第一端输入电源信号,第十六晶体管的第二端连接电平移位电路的第二控制端,用于向电平移位电路提供第二基准电压;第十七晶体管,第十七晶体管的第一端和控制端连接第十六晶体管的第二端;第十八晶体管,第十八晶体管的第一端连接第十七晶体管的第二端,第十八晶体管的第二端接地,第十八晶体管的控制端连接第十七晶体管的第二端。Wherein, the amplifier circuit further includes a second input voltage circuit; the second input voltage circuit includes: a sixteenth transistor, the first end of the sixteenth transistor inputs a power supply signal, and the second end of the sixteenth transistor is connected to the level shift circuit The second control terminal is used to provide the second reference voltage to the level shift circuit; the seventeenth transistor, the first terminal of the seventeenth transistor and the control terminal are connected to the second terminal of the sixteenth transistor; the eighteenth transistor, the The first end of the eighteenth transistor is connected to the second end of the seventeenth transistor, the second end of the eighteenth transistor is grounded, and the control end of the eighteenth transistor is connected to the second end of the seventeenth transistor.

本申请采用的另一种技术方案是提供一种电子设备,该电子设备包括:放大器电路,放大器电路如上述方案提供的放大器电路;控制器,连接放大器电路,用于向放大器电路输入信号,以使放大器电路对输入信号进行放大。Another technical solution adopted in the present application is to provide an electronic device, the electronic device includes: an amplifier circuit, such as the amplifier circuit provided by the above solution; a controller connected to the amplifier circuit for inputting a signal to the amplifier circuit to The amplifier circuit is made to amplify the input signal.

本申请的有益效果是:区别于现有技术的情况,本申请的一种放大器电路,该放大器电路包括:推挽电路,包括:第一晶体管,第一晶体管的第一端输入电源信号,第一晶体管的第二端用于输出;第二晶体管,第二晶体管的第一端连接第一晶体管的第二端,第二晶体管的第二端接地;电平移位电路,电平移位电路的第一端连接第一晶体管的控制端,电平移位电路的第二端连接第二晶体管的控制端;放大电路,连接第二晶体管的控制端,用于在输入信号的作用下产生放大信号,并将放大信号输入至第二晶体管的控制端。通过上述方式,利用推挽电路和放大电路结合,将输入信号在放大电路进行一次放大之后,再通过推挽电路进行二次放大,能够提升放大器电路对输入信号处理的增益和放大速度。The beneficial effects of the present application are: different from the situation in the prior art, an amplifier circuit of the present application includes: a push-pull circuit, including: a first transistor, a first end of the first transistor inputs a power supply signal, a first The second end of a transistor is used for output; for the second transistor, the first end of the second transistor is connected to the second end of the first transistor, and the second end of the second transistor is grounded; the level shift circuit, the first end of the level shift circuit One end is connected to the control end of the first transistor, the second end of the level shift circuit is connected to the control end of the second transistor; the amplifier circuit is connected to the control end of the second transistor, and is used to generate an amplified signal under the action of the input signal, and The amplified signal is input to the control terminal of the second transistor. In the above manner, by combining the push-pull circuit and the amplifier circuit, the input signal is amplified once in the amplifying circuit, and then is amplified twice by the push-pull circuit, which can improve the gain and amplifying speed of the input signal processing by the amplifier circuit.

附图说明Description of drawings

为了更清楚地说明本申请实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。其中:In order to illustrate the technical solutions in the embodiments of the present application more clearly, the following briefly introduces the drawings that are used in the description of the embodiments. Obviously, the drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can also be obtained from these drawings without creative effort. in:

图1是本申请提供的放大器电路一实施例的结构示意图;1 is a schematic structural diagram of an embodiment of an amplifier circuit provided by the present application;

图2是本申请提供的图1中的推挽电路一实施例的结构示意图;FIG. 2 is a schematic structural diagram of an embodiment of the push-pull circuit in FIG. 1 provided by the present application;

图3是本申请提供的图1中的放大电路一实施例的结构示意图;3 is a schematic structural diagram of an embodiment of the amplifying circuit in FIG. 1 provided by the present application;

图4是本申请提供的图2和图3结合形成的放大器电路的结构示意图;FIG. 4 is a schematic structural diagram of the amplifier circuit formed by the combination of FIG. 2 and FIG. 3 provided by the present application;

图5是本申请提供的放大器电路另一实施例的结构示意图;5 is a schematic structural diagram of another embodiment of an amplifier circuit provided by the present application;

图6是本申请提供的放大器电路另一实施例的结构示意图;6 is a schematic structural diagram of another embodiment of an amplifier circuit provided by the present application;

图7是本申请提供的放大器电路另一实施例的结构示意图;7 is a schematic structural diagram of another embodiment of an amplifier circuit provided by the present application;

图8是本申请提供的放大器电路另一实施例的结构示意图;8 is a schematic structural diagram of another embodiment of an amplifier circuit provided by the present application;

图9是本申请提供的电子设备一实施例的结构示意图。FIG. 9 is a schematic structural diagram of an embodiment of an electronic device provided by the present application.

具体实施方式Detailed ways

下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述。可以理解的是,此处所描述的具体实施例仅用于解释本申请,而非对本申请的限定。另外还需要说明的是,为了便于描述,附图中仅示出了与本申请相关的部分而非全部结构。基于本申请中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. It should be understood that the specific embodiments described herein are only used to explain the present application, but not to limit the present application. In addition, it should be noted that, for the convenience of description, the drawings only show some but not all the structures related to the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.

在本文中提及“实施例”意味着,结合实施例描述的特定特征、结构或特性可以包含在本申请的至少一个实施例中。在说明书中的各个位置出现该短语并不一定均是指相同的实施例,也不是与其它实施例互斥的独立的或备选的实施例。本领域技术人员显式地和隐式地理解的是,本文所描述的实施例可以与其它实施例相结合。Reference herein to an "embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the present application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor a separate or alternative embodiment that is mutually exclusive of other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

放大器电路能增加信号的输出功率。它透过电源取得能量来源,以控制输出信号的波形与输入信号一致,但具有较大的振幅。依此来讲,放大器电路亦可视为可调节的输出电源,用来获得比输入信号更强的输出信号。放大器电路是由晶体三极管(或场效应管)、电容器,电阻及电源等组成的。放大电路通过电能转换把微弱的电信号增强到所要求的电压、电流或功率值,即利用晶体三极管(或场效应管)的放大和控制作用把电源的能量转换为与输入量成比例变化的输出量。The amplifier circuit can increase the output power of the signal. It obtains the energy source through the power supply to control the waveform of the output signal to be consistent with the input signal, but with a larger amplitude. In this regard, the amplifier circuit can also be regarded as an adjustable output power supply to obtain an output signal stronger than the input signal. The amplifier circuit is composed of transistors (or field effect transistors), capacitors, resistors and power supplies. The amplifying circuit enhances the weak electrical signal to the required voltage, current or power value through power conversion, that is, uses the amplification and control of the transistor (or field effect transistor) to convert the energy of the power supply into a proportional change in the input quantity. output.

参阅图1,图1是本申请提供的放大器电路一实施例的结构示意图。放大器电路10包括推挽电路11和放大电路12。Referring to FIG. 1 , FIG. 1 is a schematic structural diagram of an embodiment of an amplifier circuit provided by the present application. The amplifier circuit 10 includes a push-pull circuit 11 and an amplifier circuit 12 .

其中,推挽电路11包括第一晶体管M1、第二晶体管M2和电平移位电路111。第一晶体管M1的第一端a1输入电源信号,第一晶体管M1的第二端b1用于输出。第二晶体管M2的第一端a2连接第一晶体管M1的第二端b1,第二晶体管M2的第二端b2接地。电平移位电路111的第一端a3连接第一晶体管M1的控制端c1,电平移位电路111的第二端b3连接第二晶体管M2的控制端c2。The push-pull circuit 11 includes a first transistor M1 , a second transistor M2 and a level shift circuit 111 . The first terminal a1 of the first transistor M1 is input with a power supply signal, and the second terminal b1 of the first transistor M1 is used for output. The first end a2 of the second transistor M2 is connected to the second end b1 of the first transistor M1 , and the second end b2 of the second transistor M2 is grounded. The first terminal a3 of the level shift circuit 111 is connected to the control terminal c1 of the first transistor M1, and the second terminal b3 of the level shift circuit 111 is connected to the control terminal c2 of the second transistor M2.

其中,电平移位电路111包括第三晶体管和第四晶体管。第三晶体管的第一端连接第一晶体管的控制端,第三晶体管的第二端连接第二晶体管的控制端;第四晶体管的第一端连接第一晶体管的控制端,第四晶体管的第二端连接所述第二晶体管的控制端。通过第三晶体管和第四晶体管的构成的电平移位电路111,在第三晶体管为P型MOS管,第四晶体管为N型MOS管时,能够在大信号方面实现电平移位,使得NMOS和PMOS的栅压值分离,实现分别控制;还能够在小信号方面实现输入输出电平跟随,交流短路,使得小信号在输出级的放大。The level shift circuit 111 includes a third transistor and a fourth transistor. The first end of the third transistor is connected to the control end of the first transistor, the second end of the third transistor is connected to the control end of the second transistor; the first end of the fourth transistor is connected to the control end of the first transistor, and the second end of the fourth transistor is connected to the control end of the first transistor. The two terminals are connected to the control terminal of the second transistor. Through the level shift circuit 111 composed of the third transistor and the fourth transistor, when the third transistor is a P-type MOS transistor and the fourth transistor is an N-type MOS transistor, the level shift can be realized in terms of large signals, so that the NMOS and The gate voltage value of PMOS is separated to realize separate control; it can also realize input and output level follow-up in terms of small signals, and AC short circuit, so that small signals can be amplified in the output stage.

参阅图2,图2是本申请提供的推挽电路一实施例的结构示意图。Referring to FIG. 2 , FIG. 2 is a schematic structural diagram of an embodiment of a push-pull circuit provided by the present application.

推挽电路11包括第一晶体管M1、第二晶体管M2、第三晶体管M3和第四晶体管M4。在一些实施例中,上述晶体管均为MOS管,则第一晶体管M1的源极连接电源、第一晶体管M1的漏极连接第二晶体管M2的漏极,第一晶体管M1的栅极连接第三晶体管M3的源极和第四晶体管M4的漏极。第二晶体管M2的源极接地、第二晶体管M2的漏极连接第一晶体管M1的漏极,第一晶体管M1的栅极连接第三晶体管M3的漏极和第四晶体管M4的源极。第一晶体管M1的漏极和第二晶体管M2的漏极连接输出端OUT,用于输出放大后的信号,输出端OUT可以连接负载。第三晶体管M3的栅极和第四晶体管M4的栅极输入控制电压。第三晶体管M3的漏极与第四晶体管M4的源极连接,第三晶体管M3的源极和第四晶体管M4的漏极连接。第三晶体管M3和第四晶体管M4依靠上述连接关系形成图1中的电平移位电路111。第三晶体管M3的源极相当于第三晶体管的第一端,第三晶体管M3的漏极相当于第三晶体管的第二端。第四晶体管M4的源极相当于第四晶体管的第二端,第四晶体管M4的漏极相当于第四晶体管的第一端。The push-pull circuit 11 includes a first transistor M1, a second transistor M2, a third transistor M3 and a fourth transistor M4. In some embodiments, the above transistors are all MOS transistors, the source of the first transistor M1 is connected to the power supply, the drain of the first transistor M1 is connected to the drain of the second transistor M2, and the gate of the first transistor M1 is connected to the third The source of the transistor M3 and the drain of the fourth transistor M4. The source of the second transistor M2 is grounded, the drain of the second transistor M2 is connected to the drain of the first transistor M1, and the gate of the first transistor M1 is connected to the drain of the third transistor M3 and the source of the fourth transistor M4. The drain of the first transistor M1 and the drain of the second transistor M2 are connected to the output terminal OUT for outputting the amplified signal, and the output terminal OUT can be connected to the load. A control voltage is input to the gate of the third transistor M3 and the gate of the fourth transistor M4. The drain of the third transistor M3 is connected to the source of the fourth transistor M4, and the source of the third transistor M3 is connected to the drain of the fourth transistor M4. The third transistor M3 and the fourth transistor M4 form the level shift circuit 111 in FIG. 1 by virtue of the above connection relationship. The source of the third transistor M3 corresponds to the first end of the third transistor, and the drain of the third transistor M3 corresponds to the second end of the third transistor. The source of the fourth transistor M4 corresponds to the second terminal of the fourth transistor, and the drain of the fourth transistor M4 corresponds to the first terminal of the fourth transistor.

放大电路12连接第二晶体管M2的控制端,用于在输入信号的作用下产生放大信号,并将放大信号输入至第二晶体管M2的控制端。The amplifying circuit 12 is connected to the control terminal of the second transistor M2 for generating an amplified signal under the action of the input signal, and inputting the amplified signal to the control terminal of the second transistor M2.

参阅图3,图3是本申请提供的放大电路一实施例的结构示意图。Referring to FIG. 3 , FIG. 3 is a schematic structural diagram of an embodiment of an amplifying circuit provided by the present application.

放大电路12包括第六晶体管M6和第七晶体管M7。其中,第六晶体管M6的第一端连接第七晶体管M7的第二端,第六晶体管M6的第二端接地,第六晶体管M6的控制端用于输入信号;第七晶体管M7的第一端连接第二晶体管M2的控制端。输入小信号能够在放大电路12的第六晶体管M6放大一次,然后在第七晶体管M7再放大一次,实现两次放大。The amplifying circuit 12 includes a sixth transistor M6 and a seventh transistor M7. The first end of the sixth transistor M6 is connected to the second end of the seventh transistor M7, the second end of the sixth transistor M6 is grounded, and the control end of the sixth transistor M6 is used for inputting signals; the first end of the seventh transistor M7 The control terminal of the second transistor M2 is connected. The input small signal can be amplified once in the sixth transistor M6 of the amplifying circuit 12, and then amplified again in the seventh transistor M7 to achieve two amplifications.

在一些实施例中,上述晶体管均为MOS管,则第六晶体管M6的栅极用于接收输入信号,输入信号在栅极的电压VGS大于参考电压时,第六晶体管M6产生电流I1。第七晶体管M7的栅极用于接收控制信号,在栅极的电压VGS大于参考电压时,因第六晶体管M6已导通,则第七晶体管M7导通,产生电流I2In some embodiments, the above transistors are all MOS transistors, and the gate of the sixth transistor M6 is used for receiving an input signal. When the voltage V GS of the input signal at the gate is greater than the reference voltage, the sixth transistor M6 generates a current I 1 . The gate of the seventh transistor M7 is used for receiving the control signal. When the voltage V GS of the gate is greater than the reference voltage, since the sixth transistor M6 is turned on, the seventh transistor M7 is turned on to generate the current I 2 .

因第六晶体管M6的源极接地,因此参考电压很小,所以小信号的输入信号会大于参考电压,第六晶体管M6导通。因第六晶体管M6已导通,则第七晶体管M7的参考电压也很小,所以第七晶体管M7的栅极输入控制信号会使第七晶体管M7导通。Because the source of the sixth transistor M6 is grounded, the reference voltage is very small, so the input signal of the small signal will be greater than the reference voltage, and the sixth transistor M6 is turned on. Since the sixth transistor M6 has been turned on, the reference voltage of the seventh transistor M7 is also very small, so the gate of the seventh transistor M7 is input with a control signal to turn on the seventh transistor M7.

将图2和图3结合,可得到如图4所示放大器电路结构示意图,其中,第七晶体管M7的漏极连接第二晶体管M2的栅极。因第三晶体管M3的漏极、第四晶体管M4的源极均连接第二晶体管M2的栅极,则第三晶体管M3的漏极、第四晶体管M4的源极和第七晶体管M7的漏极会存在一公共点A。因第三晶体管M3的源极、第四晶体管M4的漏极均连接第一晶体管M1的栅极,则会存在一公共点B。Combining FIG. 2 and FIG. 3 , a schematic structural diagram of the amplifier circuit shown in FIG. 4 can be obtained, wherein the drain of the seventh transistor M7 is connected to the gate of the second transistor M2 . Since the drain of the third transistor M3 and the source of the fourth transistor M4 are both connected to the gate of the second transistor M2, the drain of the third transistor M3, the source of the fourth transistor M4 and the drain of the seventh transistor M7 There will be a common point A. Since the source of the third transistor M3 and the drain of the fourth transistor M4 are both connected to the gate of the first transistor M1, a common point B exists.

在一应用场景中,公共点B还连接有对应的供电回路,当第三晶体管M3的栅极接入电压为VCC-2VGS,第四晶体管M4的栅极输入电压为2VGS,第七晶体管M7的栅极通入电压,且第六晶体管M6的栅极通入输入信号IN时,若输入信号IN的电压大于第六晶体管M6的参考电压,则第六晶体管M6导通,则从公共点B到公共点A到第七晶体管M7到第六晶体管M6形成回路。此时,输入信号从IN输入,小信号通过第六晶体管M6放大一次,从第六晶体管M6的漏极输出,因第六晶体管M6的漏极与第七晶体管M7的源极,然后通过第七晶体管M7放大一次,从第七晶体管M7的漏极输出给到G公共点A,进而给到第二晶体管M2的栅极,在第二晶体管M2再次放大。此时,因A点电压发生变化,则B点相应地同方向变化,并将变化后的电压给到第一晶体管M1的栅极。其中,从输入信号IN到A点为共源共栅结构(Cascode),具有很高的增益。In an application scenario, the common point B is also connected with a corresponding power supply loop. When the gate input voltage of the third transistor M3 is VCC-2V GS , the gate input voltage of the fourth transistor M4 is 2V GS , and the seventh transistor M4 has a gate input voltage of 2V GS . When the gate of M7 is connected to the voltage, and the gate of the sixth transistor M6 is connected to the input signal IN, if the voltage of the input signal IN is greater than the reference voltage of the sixth transistor M6, the sixth transistor M6 is turned on, and the voltage from the common point B to the common point A to the seventh transistor M7 to the sixth transistor M6 form a loop. At this time, the input signal is input from IN, the small signal is amplified once through the sixth transistor M6, and output from the drain of the sixth transistor M6, because the drain of the sixth transistor M6 and the source of the seventh transistor M7, and then through the seventh The transistor M7 is amplified once, and is output from the drain of the seventh transistor M7 to the G common point A, and then to the gate of the second transistor M2, and is amplified again in the second transistor M2. At this time, since the voltage of point A changes, point B changes correspondingly in the same direction, and the changed voltage is applied to the gate of the first transistor M1. Among them, from the input signal IN to point A is a cascode structure (Cascode), which has a high gain.

具体地,在输入信号电压从0逐渐增大的情况下,当第六晶体管M6导通后,A点的电位快速被下拉至低电平,则第二晶体管M2截止,与此同时,B点的电位和A点电位同方向减小,被下拉至低电平,第一晶体管M1快速导通,则第一晶体管M1的漏极迅速输出高电平;在输入信号电压从高电平逐渐减小的情况下,当第六晶体管M6截止时,A点的电位快速被上拉至高电平,第二晶体管M2导通,则第二晶体管M2的漏极迅速输出低电平,与此同时,B点的电位和A点电位同方向增加,被上拉至高电平,则第一晶体管M1截止。Specifically, when the input signal voltage gradually increases from 0, after the sixth transistor M6 is turned on, the potential of point A is quickly pulled down to a low level, and the second transistor M2 is turned off, and at the same time, point B is turned off. The potential and the potential of point A decrease in the same direction, are pulled down to a low level, the first transistor M1 is quickly turned on, and the drain of the first transistor M1 quickly outputs a high level; when the input signal voltage gradually decreases from a high level In small cases, when the sixth transistor M6 is turned off, the potential of point A is quickly pulled up to a high level, the second transistor M2 is turned on, and the drain of the second transistor M2 quickly outputs a low level, and at the same time, The potential of point B increases in the same direction as the potential of point A, and is pulled up to a high level, then the first transistor M1 is turned off.

在其他实施例中,放大器电路中的晶体管可以是双极性晶体管(BJT)或场效应晶体管(FET,单极性)。晶体管有三个极(端子);双极性晶体管的三个极(端子),分别是由N型、P型半导体组成的发射极(Emitter)、基极(Base)和集电极(Collector);场效应晶体管的三个极(端子),分别是源极(Source)、栅极(Gate)和漏极(Drain)。具体类型根据放电器电路的实际需求进行相应替换。In other embodiments, the transistors in the amplifier circuit may be bipolar transistors (BJTs) or field effect transistors (FETs, unipolar). The transistor has three poles (terminals); the three poles (terminals) of the bipolar transistor are the emitter (Emitter), the base (Base) and the collector (Collector) composed of N-type and P-type semiconductors respectively; The three poles (terminals) of the effect transistor are the source (Source), the gate (Gate) and the drain (Drain) respectively. The specific type should be replaced according to the actual needs of the arrester circuit.

区别于现有技术的情况,本申请的一种放大器电路,该放大器电路包括:推挽电路,包括:第一晶体管,第一晶体管的第一端输入电源信号,第一晶体管的第二端用于输出;第二晶体管,第二晶体管的第一端连接第一晶体管的第二端,第二晶体管的第二端接地;电平移位电路,电平移位电路的第一端连接第一晶体管的控制端,电平移位电路的第二端连接第二晶体管的控制端;放大电路,连接第二晶体管的控制端,用于在输入信号的作用下产生放大信号,并将放大信号输入至第二晶体管的控制端。通过上述方式,利用推挽电路和放大电路结合,将输入信号在放大电路进行一次放大之后,再通过推挽电路进行二次放大,能够提升放大器电路对输入信号处理的增益和放大速度。Different from the situation in the prior art, an amplifier circuit of the present application includes: a push-pull circuit, including: a first transistor, a first end of the first transistor inputs a power supply signal, and a second end of the first transistor uses output; the second transistor, the first end of the second transistor is connected to the second end of the first transistor, the second end of the second transistor is grounded; the level shift circuit, the first end of the level shift circuit is connected to the first end of the first transistor The control terminal, the second terminal of the level shift circuit is connected to the control terminal of the second transistor; the amplifier circuit is connected to the control terminal of the second transistor, and is used to generate an amplified signal under the action of the input signal, and input the amplified signal to the second transistor. control terminal of the transistor. In the above manner, by combining the push-pull circuit and the amplifier circuit, the input signal is amplified once in the amplifying circuit, and then is amplified twice by the push-pull circuit, which can improve the gain and amplifying speed of the input signal processing by the amplifier circuit.

参阅图5,图5是本申请提供的放大器电路另一实施例的结构示意图。放大器电路10包括第一晶体管M1、第二晶体管M2、电平移位电路111、放大电路12、偏置电路13、第一输入电压电路14、第二输入电压电路15和第五晶体管M5。Referring to FIG. 5 , FIG. 5 is a schematic structural diagram of another embodiment of the amplifier circuit provided by the present application. The amplifier circuit 10 includes a first transistor M1, a second transistor M2, a level shift circuit 111, an amplifier circuit 12, a bias circuit 13, a first input voltage circuit 14, a second input voltage circuit 15, and a fifth transistor M5.

其中,电平移位电路111包括第三晶体管M3和第四晶体管M4。放大电路12包括第六晶体管M6和第七晶体管M7。晶体管之间的连接关系上述实施例已经描述,这里不再赘述。The level shift circuit 111 includes a third transistor M3 and a fourth transistor M4. The amplifying circuit 12 includes a sixth transistor M6 and a seventh transistor M7. The connection relationship between the transistors has been described in the above embodiments, and will not be repeated here.

在其他实施例中,第五晶体管M5可以替换为任一一种恒流源,其中,恒流源的第一端输入电源信号,恒流源的第二端连接第一晶体管的控制端,能够在第一输入电压电路14、第二输入电压电路15提供的恒定电压下,提供恒定电流,使电平移位电路111中第三晶体管M3和第四晶体管M4均工作在饱和恒流源区,实现电平移位。In other embodiments, the fifth transistor M5 can be replaced with any kind of constant current source, wherein the first end of the constant current source is input with the power signal, and the second end of the constant current source is connected to the control end of the first transistor, which can Under the constant voltage provided by the first input voltage circuit 14 and the second input voltage circuit 15, a constant current is provided, so that both the third transistor M3 and the fourth transistor M4 in the level shift circuit 111 work in the saturated constant current source region, so as to realize level shift.

其中,偏置电路13的第一端输入电源信号,偏置电路13的第二端连接第五晶体管M5的控制端,偏置电路13的第三端连接第七晶体管M7的控制端,偏置电路13的第四端接地。偏置电路13可在输入电压的作用下,向第五晶体管M5的控制端和第七晶体管M7的控制端提供稳定的控制端电压。具体地,偏置电路13包括第八晶体管M8、第九晶体管M9、第十晶体管M10和电阻R1;第八晶体管M8的第一端输入电源信号,第八晶体管M8的第二端连接第八晶体管M8的控制端和第九晶体管M9的控制端;第九晶体管M9的第一端输入电源信号,第九晶体管M9的第二连接第七晶体管M7的控制端;电阻R1的第一端连接第八晶体管M8,电阻R1的第二端接地;第十晶体管M10的第一端连接第九晶体管M9的第二端;第十晶体管M10的第二端接地,第十晶体管M10的控制端连接偏置电路13的第三端。偏置电路13通过上述晶体管的连接,为第七晶体管M7提供控制端输入电压,使第七晶体管M7处于导通状态,进而对从第六晶体管M6输入的输入信号进行放大,还为后续的第一输入电压电路14和第二输入电压电路15提供电压,以使第一输入电压电路14和第二输入电压电路15正常工作。The first end of the bias circuit 13 is input with a power supply signal, the second end of the bias circuit 13 is connected to the control end of the fifth transistor M5, the third end of the bias circuit 13 is connected to the control end of the seventh transistor M7, and the bias circuit 13 is connected to the control end of the seventh transistor M7. The fourth terminal of the circuit 13 is grounded. The bias circuit 13 can provide a stable control terminal voltage to the control terminal of the fifth transistor M5 and the control terminal of the seventh transistor M7 under the action of the input voltage. Specifically, the bias circuit 13 includes an eighth transistor M8, a ninth transistor M9, a tenth transistor M10 and a resistor R1; the first end of the eighth transistor M8 is input with a power supply signal, and the second end of the eighth transistor M8 is connected to the eighth transistor The control terminal of M8 and the control terminal of the ninth transistor M9; the first terminal of the ninth transistor M9 inputs the power supply signal, the second terminal of the ninth transistor M9 is connected to the control terminal of the seventh transistor M7; the first terminal of the resistor R1 is connected to the eighth transistor M7. In the transistor M8, the second end of the resistor R1 is grounded; the first end of the tenth transistor M10 is connected to the second end of the ninth transistor M9; the second end of the tenth transistor M10 is grounded, and the control end of the tenth transistor M10 is connected to the bias circuit The third end of 13. The bias circuit 13 provides the control terminal input voltage for the seventh transistor M7 through the connection of the above-mentioned transistors, so that the seventh transistor M7 is in a conducting state, and further amplifies the input signal input from the sixth transistor M6, which is also used for the subsequent sixth transistor M6. An input voltage circuit 14 and a second input voltage circuit 15 provide voltages so that the first input voltage circuit 14 and the second input voltage circuit 15 work normally.

第一输入电压电路14包括第十三晶体管M13、第十四晶体管M14和第十五晶体管M15。第十三晶体管M13的第一端输入电源信号,第十三晶体管M13的第二端连接第十三晶体管M13的控制端;第十四晶体管M14的第一端连接第十三晶体管M13的第二端,第十四晶体管M14的第二端连接第十四晶体管M14的控制端和电平移位电路111的第一控制端,用于向电平移位电路111提供第一基准电压。具体地,第十四晶体管M14的第二端连接电平移位电路111中的第三晶体管M3的控制端,用于向第三晶体管M3的控制端提供第一基准电压;第十五晶体管M15的第一端连接第十四晶体管M14的第二端,第十五晶体管M15的第二端接地,第十五晶体管M15的控制端连接第九晶体管的第二端。第一输入电压电路14通过上述方式的连接,能够在工作时提供给第三晶体管M3的控制端提供稳定的控制端输入电压。如第十三晶体管M13、第十四晶体管M14和第十五晶体管M15均为MOS管,且第十三晶体管M13和第十四晶体管M14的栅极与源极间的电压为Vgs,电源为VCC,则第三晶体管M3控制端的输入电压为VCC-2Vgs,此输入电压为第一基准电压。The first input voltage circuit 14 includes a thirteenth transistor M13, a fourteenth transistor M14, and a fifteenth transistor M15. The first end of the thirteenth transistor M13 is input with a power supply signal, the second end of the thirteenth transistor M13 is connected to the control end of the thirteenth transistor M13; the first end of the fourteenth transistor M14 is connected to the second end of the thirteenth transistor M13 terminal, the second terminal of the fourteenth transistor M14 is connected to the control terminal of the fourteenth transistor M14 and the first control terminal of the level shift circuit 111 for providing the first reference voltage to the level shift circuit 111 . Specifically, the second terminal of the fourteenth transistor M14 is connected to the control terminal of the third transistor M3 in the level shift circuit 111, so as to provide the first reference voltage to the control terminal of the third transistor M3; The first end is connected to the second end of the fourteenth transistor M14, the second end of the fifteenth transistor M15 is grounded, and the control end of the fifteenth transistor M15 is connected to the second end of the ninth transistor. The first input voltage circuit 14 can provide a stable control end input voltage to the control end of the third transistor M3 during operation by being connected in the above manner. For example, the thirteenth transistor M13, the fourteenth transistor M14 and the fifteenth transistor M15 are all MOS transistors, and the voltage between the gate and the source of the thirteenth transistor M13 and the fourteenth transistor M14 is V gs , and the power supply is VCC, then the input voltage of the control terminal of the third transistor M3 is VCC-2V gs , and this input voltage is the first reference voltage.

第二输入电压电路15包括第十六晶体管M16、第十七晶体管M17和第十八晶体管M18。其中,第十六晶体管M16的第一端输入电源信号,第十六晶体管M16的第二端连接电平移位电路111的第二控制端,用于向电平移位电路111提供第二基准电压。具体地,第十六晶体管M16的第二端连接电平移位电路111中的第四晶体管M4的控制端,用于向第四晶体管M4的控制端提供第二基准电压;第十七晶体管M17的第一端和控制端连接第十六晶体管M16的第二端;第十八晶体管M18的第一端连接第十七晶体管M17的第二端,第十八晶体管M18的第二端接地,第十八晶体管M18的控制端连接第十七晶体管M17的第二端。第二输入电压电路15通过上述方式的连接,能够在工作时提供给第四晶体管M4的控制端提供稳定的控制端输入电压。如第十六晶体管M16、第十七晶体管M17和第十八晶体管M18为MOS管,且第十七晶体管M17和第十八晶体管M18的栅极与源极间的电压为Vgs,电源为VCC,则第四晶体管控制端的输入电压为2Vgs,此输入电压为第二基准电压。The second input voltage circuit 15 includes a sixteenth transistor M16, a seventeenth transistor M17, and an eighteenth transistor M18. The first terminal of the sixteenth transistor M16 is input with a power supply signal, and the second terminal of the sixteenth transistor M16 is connected to the second control terminal of the level shift circuit 111 for providing a second reference voltage to the level shift circuit 111 . Specifically, the second terminal of the sixteenth transistor M16 is connected to the control terminal of the fourth transistor M4 in the level shift circuit 111, so as to provide the second reference voltage to the control terminal of the fourth transistor M4; The first end and the control end are connected to the second end of the sixteenth transistor M16; the first end of the eighteenth transistor M18 is connected to the second end of the seventeenth transistor M17, the second end of the eighteenth transistor M18 is grounded, and the tenth transistor M18 is connected to the ground. The control terminals of the eight transistors M18 are connected to the second terminals of the seventeenth transistor M17. The second input voltage circuit 15 can provide a stable control end input voltage to the control end of the fourth transistor M4 during operation through the above-mentioned connection. For example, the sixteenth transistor M16, the seventeenth transistor M17 and the eighteenth transistor M18 are MOS transistors, and the voltage between the gate and the source of the seventeenth transistor M17 and the eighteenth transistor M18 is V gs , and the power supply is VCC , then the input voltage of the control terminal of the fourth transistor is 2V gs , and the input voltage is the second reference voltage.

第五晶体管M5为MOS管。其中,第五晶体管M5为尾电流负载管,用于在第五晶体管M5的栅极输入电压的控制下实现恒定的电流,进而控制与第五晶体管M5的漏极相连的电平移位电路111以及与电平移位电路111相连的放大电路12之间的回路。当A点的电位升高时,流过第四晶体管M4的电流减小,则流过第三晶体管M3的电流增加,因此B点的电位升高。当A点的电位下降时,流过第四晶体管M4的电流增加,流过第三晶体管M3的电流减小,则B点的电位下降。因此,实现了A点和B点的交流小信号短路。The fifth transistor M5 is a MOS transistor. The fifth transistor M5 is a tail current load tube, which is used to realize a constant current under the control of the gate input voltage of the fifth transistor M5, thereby controlling the level shift circuit 111 connected to the drain of the fifth transistor M5 and A loop between the amplifier circuits 12 connected to the level shift circuit 111 . When the potential at point A increases, the current flowing through the fourth transistor M4 decreases, and the current flowing through the third transistor M3 increases, so the potential at point B increases. When the potential at point A drops, the current flowing through the fourth transistor M4 increases, and the current flowing through the third transistor M3 decreases, and the potential at point B drops. Therefore, the AC small signal short circuit at point A and point B is realized.

因电平移位电路111、放大电路12、第五晶体管M5、第一输入电压电路14和第二输入电压电路15中存在MOS管,则偏置电路13用于向电平移位电路111、放大电路12、第五晶体管M5、第一输入电压电路14和第二输入电压电路15中的相应的MOS管的栅极输入电压。Since there are MOS transistors in the level shift circuit 111 , the amplifier circuit 12 , the fifth transistor M5 , the first input voltage circuit 14 and the second input voltage circuit 15 , the bias circuit 13 is used to shift the level shift circuit 111 , the amplifier circuit 12. The gate input voltage of the corresponding MOS transistors in the fifth transistor M5, the first input voltage circuit 14 and the second input voltage circuit 15.

基于图5描述整个放大器电路的工作逻辑:Based on Figure 5, describe the working logic of the entire amplifier circuit:

先看偏置电路13,偏置电路13中第八晶体管M8的源极连接电源VCC,漏极连接电阻R1的第一端以及栅极。第九晶体管M9的源极连接电源VCC,漏极连接第十晶体管M10的漏极,栅极连接第八晶体管M8的栅极。电阻R的第二端和第十晶体管M10的源极接地。其中,第八晶体管M8和第九晶体管M9为P型MOS管,第十晶体管M10为N型MOS管。电源VCC通过第八晶体管M8后被电阻R1下拉至低电平,第八晶体管M8导通,M8上产生的源极-栅极电压差输出至第九晶体管M9的源级-栅极,使得M9导通产生电流,电流通过第十晶体管M10,继而生成栅极-源级电压差。Looking at the bias circuit 13 first, the source of the eighth transistor M8 in the bias circuit 13 is connected to the power supply VCC, and the drain is connected to the first end of the resistor R1 and the gate. The source of the ninth transistor M9 is connected to the power supply VCC, the drain is connected to the drain of the tenth transistor M10, and the gate is connected to the gate of the eighth transistor M8. The second end of the resistor R and the source of the tenth transistor M10 are grounded. The eighth transistor M8 and the ninth transistor M9 are P-type MOS transistors, and the tenth transistor M10 is an N-type MOS transistor. After the power VCC passes through the eighth transistor M8, it is pulled down to a low level by the resistor R1, the eighth transistor M8 is turned on, and the source-gate voltage difference generated on M8 is output to the source-gate of the ninth transistor M9, so that M9 Turning on generates a current, the current passes through the tenth transistor M10, and then generates a gate-source voltage difference.

接着看第一输入电压电路14,第一输入电压电路14中第十三晶体管M13的源极连接电源VCC,漏极与栅极连接,且漏极与第十四晶体管M14的源极连接。第十四晶体管M14的漏极与栅极连接,且与第十五晶体管M15的漏极连接,第十四晶体管M14的栅极与第三晶体管M3的栅极连接。第十五晶体管M15的源极接地,第十五晶体管M15的栅极与第十晶体管M10的栅极连接,且和第九晶体管M9的漏极连接。此时,第十晶体管M10的栅极-源极电压差输出至第十五晶体管M15,则第十五晶体管M15导通。此时第一输入电压电路14形成回路。则第三晶体管M3栅极上的输入电压为电源VCC去掉第十三晶体管M13和第十四晶体管M14的电压。其中,第十三晶体管M13和第十四晶体管M14为P型MOS管,第十五晶体管M15为N型MOS管。Next, looking at the first input voltage circuit 14, the source of the thirteenth transistor M13 in the first input voltage circuit 14 is connected to the power supply VCC, the drain is connected to the gate, and the drain is connected to the source of the fourteenth transistor M14. The drain and gate of the fourteenth transistor M14 are connected to the drain of the fifteenth transistor M15, and the gate of the fourteenth transistor M14 is connected to the gate of the third transistor M3. The source of the fifteenth transistor M15 is grounded, the gate of the fifteenth transistor M15 is connected to the gate of the tenth transistor M10, and the drain of the ninth transistor M9 is connected. At this time, the gate-source voltage difference of the tenth transistor M10 is output to the fifteenth transistor M15, and the fifteenth transistor M15 is turned on. At this time, the first input voltage circuit 14 forms a loop. Then, the input voltage on the gate of the third transistor M3 is the voltage of the thirteenth transistor M13 and the fourteenth transistor M14 removed from the power supply VCC. The thirteenth transistor M13 and the fourteenth transistor M14 are P-type MOS transistors, and the fifteenth transistor M15 is an N-type MOS transistor.

接着看第二输入电压电路15,在第二输入电压电路15中,第十六晶体管M16为P型MOS管,第十七晶体管M17和第十八晶体管M18为N型MOS管。第二输入电压电路15中的第十六晶体管M16的源极连接电源VCC,第十六晶体管M16的漏极连接第十七晶体管M17的漏极且连接第十七晶体管M17的栅极,第十六晶体管M16的栅极与第八晶体管M8的栅极连接。第十七晶体管M17的源极与第十八晶体管M18的漏极连接,且与第十八晶体管M18的栅极连接。第十八晶体管M18的源极接地。整个第二输入电压电路15形成回路,则输入第四晶体管M4栅极的电压为第十七晶体管M17和第十八晶体管M18的栅极电压之和。Next, look at the second input voltage circuit 15. In the second input voltage circuit 15, the sixteenth transistor M16 is a P-type MOS transistor, and the seventeenth transistor M17 and the eighteenth transistor M18 are N-type MOS transistors. The source of the sixteenth transistor M16 in the second input voltage circuit 15 is connected to the power supply VCC, the drain of the sixteenth transistor M16 is connected to the drain of the seventeenth transistor M17 and the gate of the seventeenth transistor M17, the tenth The gates of the six transistors M16 are connected to the gates of the eighth transistor M8. The source of the seventeenth transistor M17 is connected to the drain of the eighteenth transistor M18, and is connected to the gate of the eighteenth transistor M18. The source of the eighteenth transistor M18 is grounded. The entire second input voltage circuit 15 forms a loop, and the voltage input to the gate of the fourth transistor M4 is the sum of the gate voltages of the seventeenth transistor M17 and the eighteenth transistor M18.

接着看第五晶体管M5,第五晶体管M5为P型MOS管。第五晶体管M5的源极连接电源VCC,第五晶体管M5的漏极连接第一晶体管M1的栅极以及连接第三晶体管M3的源极和第四晶体管M4的漏极,第五晶体管M5的栅极连接第八晶体管M8的栅极。Next, look at the fifth transistor M5. The fifth transistor M5 is a P-type MOS transistor. The source of the fifth transistor M5 is connected to the power supply VCC, the drain of the fifth transistor M5 is connected to the gate of the first transistor M1 and the source of the third transistor M3 and the drain of the fourth transistor M4, and the gate of the fifth transistor M5 The electrode is connected to the gate of the eighth transistor M8.

在一些实施例中,上述的所有晶体管为MOS管,则MOS管的栅极和源极间电压均为VGS,则对应的第三晶体管M3的栅极输入电压为VCC-2VGS,第四晶体管M4的栅极输入电压为2VGS。对应的图5中,大信号分析,对于A点,VA=2VGS-VGS,M4,对于B点,VB=VCC-2VGS+VGS,M3,因所有MOS管的栅极和源极间电压均为VGS,则VA=VGS,VB=VCC-VGS。所以第三晶体管M3和第四晶体管M4均工作在饱和恒流源区。In some embodiments, all the above transistors are MOS transistors, then the voltage between the gate and the source of the MOS transistor is V GS , the corresponding gate input voltage of the third transistor M3 is VCC-2V GS , the fourth The gate input voltage of transistor M4 is 2V GS . Correspondingly in Figure 5, the large signal analysis, for point A, V A = 2V GS -V GS,M4 , for point B, V B =VCC-2V GS +V GS,M3 , because the gates of all MOS transistors and The voltages between the sources are all V GS , then VA = V GS , and VB =VCC-V GS . Therefore, both the third transistor M3 and the fourth transistor M4 work in the saturated constant current source region.

小信号分析:当VA叠加电压小信号Δ>0,则第四晶体管M4的VGS减小,则流过第四晶体管M4的电流减小,则流过第三晶体管M3的电流增加,VB的电压增加Δ。所以A点和B点交流短路。Small signal analysis: when VA superimposes the voltage small signal Δ >0, the V GS of the fourth transistor M4 decreases, the current flowing through the fourth transistor M4 decreases, and the current flowing through the third transistor M3 increases, and V The voltage of B increases by Δ. So point A and point B are AC short circuited.

输入信号IN的变化为通过第六晶体管M6放大一次,再通过第七晶体管M7放大一次,然后同步通过A点和B点,在第一晶体管M1和第二晶体管M2上再次放大。The change of the input signal IN is to amplify once by the sixth transistor M6, then amplify once by the seventh transistor M7, and then synchronously pass through points A and B, and amplify again on the first transistor M1 and the second transistor M2.

通过上述方式,使输入信号IN在放大电路放大,然后输出至A点,在推挽电路再次放大,能够提升放大器电路对输入信号处理的增益和放大速度。In the above manner, the input signal IN is amplified in the amplifier circuit, then output to point A, and amplified again in the push-pull circuit, which can improve the gain and amplifying speed of the input signal processing by the amplifier circuit.

参阅图6,放大器电路包括第一晶体管M1、第二晶体管M2、第三晶体管M3、第四晶体管M4、第七晶体管M7、第八晶体管M8、第九晶体管M9、第十晶体管M10、第十一晶体管M11、第十二晶体管M12、第十三晶体管M13、第十四晶体管M14、第十五晶体管M15、第十六晶体管M16、第十七晶体管M17、第十八晶体管M18和电阻R1。Referring to FIG. 6, the amplifier circuit includes a first transistor M1, a second transistor M2, a third transistor M3, a fourth transistor M4, a seventh transistor M7, an eighth transistor M8, a ninth transistor M9, a tenth transistor M10, an eleventh transistor Transistor M11, twelfth transistor M12, thirteenth transistor M13, fourteenth transistor M14, fifteenth transistor M15, sixteenth transistor M16, seventeenth transistor M17, eighteenth transistor M18 and resistor R1.

其中,第一晶体管M1、第三晶体管M3、第八晶体管M8、第九晶体管M9、第十一晶体管M11、第十二晶体管M12、第十三晶体管M13、第十四晶体管M14和第十六晶体管M16为P型MOS管,第二晶体管M2、第四晶体管M4、第七晶体管M7、第十晶体管M10、第十五晶体管M15、第十七晶体管M17和第十八晶体管M18为N型MOS管。Among them, the first transistor M1, the third transistor M3, the eighth transistor M8, the ninth transistor M9, the eleventh transistor M11, the twelfth transistor M12, the thirteenth transistor M13, the fourteenth transistor M14 and the sixteenth transistor M16 is a P-type MOS transistor, and the second transistor M2, the fourth transistor M4, the seventh transistor M7, the tenth transistor M10, the fifteenth transistor M15, the seventeenth transistor M17 and the eighteenth transistor M18 are N-type MOS transistors.

第一晶体管M1的源极连接电源VCC,漏极连接第二晶体管M2的漏极以及输出端OUT,栅极连接第十一晶体管M11的漏极、第三晶体管M3的源极以及第四晶体管M4的漏极。第二晶体管M2的漏极连接输出端,源极接地,栅极连接第七晶体管M7的漏极、第三晶体管M3的漏极以及第四晶体管M4的源极。第三晶体管M3的栅极连接第十四晶体管M14的栅极。第四晶体管M4的栅极连接第十七晶体管M17的栅极。第七晶体管M7的栅极连接第九晶体管M9的漏极,源极接地。第八晶体管M8的源极连接电源VCC,漏极连接电阻R1的第一端以及栅极,栅极连接第九晶体管M9的栅极。其中,电阻R1的另一端接地。The source of the first transistor M1 is connected to the power supply VCC, the drain is connected to the drain of the second transistor M2 and the output terminal OUT, and the gate is connected to the drain of the eleventh transistor M11, the source of the third transistor M3 and the fourth transistor M4 drain. The drain of the second transistor M2 is connected to the output terminal, the source is grounded, and the gate is connected to the drain of the seventh transistor M7, the drain of the third transistor M3 and the source of the fourth transistor M4. The gate of the third transistor M3 is connected to the gate of the fourteenth transistor M14. The gate of the fourth transistor M4 is connected to the gate of the seventeenth transistor M17. The gate of the seventh transistor M7 is connected to the drain of the ninth transistor M9, and the source is grounded. The source of the eighth transistor M8 is connected to the power supply VCC, the drain is connected to the first end of the resistor R1 and the gate, and the gate is connected to the gate of the ninth transistor M9. The other end of the resistor R1 is grounded.

第九晶体管M9的源极连接电源VCC,漏极连接第十晶体管M10的漏极。第十晶体管M10的栅极连接第九晶体管M9的漏极以及第十五晶体管M15的栅极。第十三晶体管M13的栅极连接电源VCC,漏极连接栅极以及第十四晶体管M14的源极。第十四晶体管M14的漏极连接栅极以及第十五晶体管M15的漏极。第十五晶体管M15的源极接地。第十六晶体管M16的源极连接电源VCC,漏极连接第十七晶体管M17的漏极,栅极连接第八晶体管M8的栅极。第十七晶体管M17的漏极连接栅极,源极连接第十八晶体管M18的漏极,栅极连接第四晶体管M4的栅极。第十八晶体管M18的源极接地,漏极连接栅极。第十一晶体管M11的源极连接第十二晶体管M12的漏极,漏极连接第三晶体管M3的源极、第四晶体管M4的漏极以及第一晶体管M1的栅极,栅极连接第八晶体管M8的栅极。第十二晶体管M12的源极连接电源VCC,栅极用于接收输入信号IN。The source of the ninth transistor M9 is connected to the power supply VCC, and the drain is connected to the drain of the tenth transistor M10. The gate of the tenth transistor M10 is connected to the drain of the ninth transistor M9 and the gate of the fifteenth transistor M15. The gate of the thirteenth transistor M13 is connected to the power supply VCC, and the drain is connected to the gate and the source of the fourteenth transistor M14. The drain of the fourteenth transistor M14 is connected to the gate and the drain of the fifteenth transistor M15. The source of the fifteenth transistor M15 is grounded. The source of the sixteenth transistor M16 is connected to the power supply VCC, the drain is connected to the drain of the seventeenth transistor M17, and the gate is connected to the gate of the eighth transistor M8. The drain of the seventeenth transistor M17 is connected to the gate, the source is connected to the drain of the eighteenth transistor M18, and the gate is connected to the gate of the fourth transistor M4. The source of the eighteenth transistor M18 is grounded, and the drain is connected to the gate. The source of the eleventh transistor M11 is connected to the drain of the twelfth transistor M12, the drain is connected to the source of the third transistor M3, the drain of the fourth transistor M4 and the gate of the first transistor M1, and the gate is connected to the eighth transistor M1. gate of transistor M8. The source of the twelfth transistor M12 is connected to the power supply VCC, and the gate is used to receive the input signal IN.

此时,第八晶体管M8、第九晶体管M9、第十晶体管M10和电阻R1构成如上述实施例中的偏置电路13,第十三晶体管M13、第十四晶体管M14和第十五晶体管M15构成如上述实施例中的第一输入电压电路14,第十六晶体管M16、第十七晶体管M17和第十八晶体管M18构成如上述实施例中的第二输入电压电路15。第十一晶体管M11和第十二晶体管M12构成如上述实施例中的放大电路12,第一晶体管M1、第二晶体管M2、第三晶体管M3和第四晶体管M4构成如上述实施例中的推挽电路11。其中,第三晶体管M3和第四晶体管M4构成如上述实施例中的推挽电路中的电平移位电路111。At this time, the eighth transistor M8, the ninth transistor M9, the tenth transistor M10 and the resistor R1 constitute the bias circuit 13 as in the above embodiment, and the thirteenth transistor M13, the fourteenth transistor M14 and the fifteenth transistor M15 constitute Like the first input voltage circuit 14 in the above-described embodiment, the sixteenth transistor M16, the seventeenth transistor M17, and the eighteenth transistor M18 constitute the second input voltage circuit 15 as in the above-described embodiment. The eleventh transistor M11 and the twelfth transistor M12 constitute the amplifying circuit 12 as in the above embodiment, and the first transistor M1, the second transistor M2, the third transistor M3 and the fourth transistor M4 constitute the push-pull as in the above embodiment circuit 11. The third transistor M3 and the fourth transistor M4 constitute the level shift circuit 111 in the push-pull circuit as in the above-mentioned embodiment.

简述图6的工作流程:Briefly describe the workflow of Figure 6:

图6中的所有MOS管的栅极和源极间电压均为VGS,则对应的第三晶体管M3的栅极输入电压为VCC-2VGS,第四晶体管M4的栅极输入电压为2VGS,则对应的图6中,大信号分析,对于A点,VA=2VGS-VGS,M4,对于B点,VB=VCC-2VGS+VGS,M3,因所有MOS管的栅极和源极间电压均为VGS,则VA=VGS,VB=VCC-VGS。所以第三晶体管M3和第四晶体管M4均工作在饱和恒流源区。The voltage between the gate and the source of all MOS transistors in FIG. 6 is V GS , the corresponding gate input voltage of the third transistor M3 is VCC-2V GS , and the gate input voltage of the fourth transistor M4 is 2V GS , then corresponding to Figure 6, large signal analysis, for point A , VA = 2V GS -V GS, M4 , for point B , VB = VCC - 2V GS +V GS, M3 , because the gates of all MOS transistors The voltage between the pole and the source is V GS , then VA = V GS , VB =VCC-V GS . Therefore, both the third transistor M3 and the fourth transistor M4 work in the saturated constant current source region.

小信号分析:当VB叠加电压小信号Δ>0,则第三晶体管M3的VGS增加,则流过第三晶体管M3的电流增加,则流过第四晶体管M4的电流减小,VA的电压增加Δ。所以A点和B点交流短路。Small signal analysis: when V B superimposes the voltage small signal Δ>0, the V GS of the third transistor M3 increases, the current flowing through the third transistor M3 increases, and the current flowing through the fourth transistor M4 decreases, V A The voltage increases by Δ. So point A and point B are AC short circuited.

输入信号IN的变化为通过第十二晶体管M12放大一次,再通过第十一晶体管M11放大一次,然后同步通过A点和B点,在第一晶体管M1和第二晶体管M2上再次放大。The change of the input signal IN is to amplify once through the twelfth transistor M12, and then through the eleventh transistor M11, and then synchronously pass through points A and B, and amplify again on the first transistor M1 and the second transistor M2.

通过上述方式,使输入信号IN在第十一晶体管M11和第十二晶体管M12放大输出至B点,在推挽电路再次放大,能够提升放大器电路对输入信号处理的增益和放大速度。Through the above method, the input signal IN is amplified and output to point B in the eleventh transistor M11 and the twelfth transistor M12, and amplified again in the push-pull circuit, which can improve the gain and amplifying speed of the input signal processing by the amplifier circuit.

在其他实施例中,上述的晶体管可以是采用CMOS(Complementary Metal OxideSemiconductor,互补金属氧化物半导体)工艺或者BJT(Bipolar Junction Transistor,双极结型晶体管)工艺或者采用体硅BCD工艺或者SOI(Silicon-On-Insulator)-BCD工艺制作的晶体管。其中,BCD工艺是指能够在同一芯片上制作双极管bipolar,CMOS和DMOS器件的技术。In other embodiments, the above transistor may be a CMOS (Complementary Metal Oxide Semiconductor) process or a BJT (Bipolar Junction Transistor, bipolar junction transistor) process, or a bulk silicon BCD process or SOI (Silicon- On-Insulator)-BCD process transistor. Among them, the BCD process refers to the technology that can fabricate bipolar, CMOS and DMOS devices on the same chip.

在一些实施例中,参阅图7,以晶体管为三极管为例,进行说明:In some embodiments, referring to FIG. 7 , the transistor is a triode as an example to illustrate:

放大器电路包括三极管Q1、三极管Q2、三极管Q3、三极管Q4、三极管Q5、三极管Q6、三极管Q7、三极管Q8、三极管Q9、三极管Q10、三极管Q11、三极管Q12、三极管Q13、三极管Q14、三极管Q15、三极管Q16和电阻R1。The amplifier circuit includes transistor Q1, transistor Q2, transistor Q3, transistor Q4, transistor Q5, transistor Q6, transistor Q7, transistor Q8, transistor Q9, transistor Q10, transistor Q11, transistor Q12, transistor Q13, transistor Q14, transistor Q15, transistor Q16 and resistor R1.

其中,三极管Q1、三极管Q3、三极管Q5、三极管Q8、三极管Q9、三极管Q11、三极管Q12和三极管Q14为PNP型三极管,三极管Q2、三极管Q4、三极管Q6、三极管Q7、三极管Q10、三极管Q13、三极管Q15和三极管Q16为NPN型三极管。Among them, transistor Q1, transistor Q3, transistor Q5, transistor Q8, transistor Q9, transistor Q11, transistor Q12 and transistor Q14 are PNP type transistors, transistor Q2, transistor Q4, transistor Q6, transistor Q7, transistor Q10, transistor Q13, transistor Q15 And the transistor Q16 is an NPN type transistor.

三极管Q1的发射极连接电源VCC,集电极连接三极管Q2的集电极以及输出端OUT,基极连接三极管Q5的集电极、三极管Q3的发射极以及三极管Q4的集电极。三极管Q2的集电极连接输出端,发射极接地,基极连接三极管Q7的集电极、三极管Q3的集电极以及三极管Q4的发射极。三极管Q3的基极连接三极管Q12的基极。三极管Q4的基极连接三极管Q15的基极。三极管Q7的基极连接三极管Q9的集电极,发射极连接三极管Q6的集电极。三极管Q6的发射极接地,基极接输入信号IN。三极管Q8的发射极连接电源VCC,集电极连接电阻R1的第一端以及基极,基极连接三极管Q9的基极。其中,电阻R1的另一端接地。The emitter of the transistor Q1 is connected to the power supply VCC, the collector is connected to the collector of the transistor Q2 and the output terminal OUT, and the base is connected to the collector of the transistor Q5, the emitter of the transistor Q3 and the collector of the transistor Q4. The collector of the transistor Q2 is connected to the output terminal, the emitter is grounded, and the base is connected to the collector of the transistor Q7, the collector of the transistor Q3 and the emitter of the transistor Q4. The base of the transistor Q3 is connected to the base of the transistor Q12. The base of the transistor Q4 is connected to the base of the transistor Q15. The base of the transistor Q7 is connected to the collector of the transistor Q9, and the emitter is connected to the collector of the transistor Q6. The emitter of the transistor Q6 is grounded, and the base is connected to the input signal IN. The emitter of the transistor Q8 is connected to the power supply VCC, the collector is connected to the first end of the resistor R1 and the base, and the base is connected to the base of the transistor Q9. The other end of the resistor R1 is grounded.

三极管Q9的发射极连接电源VCC,集电极连接三极管Q10的集电极。三极管Q10的基极连接三极管Q9的集电极以及三极管Q13的基极。三极管Q11的基极连接电源VCC,集电极连接基极以及三极管Q12的发射极。三极管Q12的集电极连接基极以及三极管Q13的集电极。三极管Q13的发射极接地。三极管Q14的发射极连接电源VCC,集电极连接三极管Q15的集电极,基极连接三极管Q8的基极。三极管Q15的集电极连接基极,发射极连接三极管Q16的集电极,基极连接三极管Q4的基极。三极管Q16的发射极接地,集电极连接基极。The emitter of the transistor Q9 is connected to the power supply VCC, and the collector is connected to the collector of the transistor Q10. The base of the transistor Q10 is connected to the collector of the transistor Q9 and the base of the transistor Q13. The base of the transistor Q11 is connected to the power supply VCC, and the collector is connected to the base and the emitter of the transistor Q12. The collector of the transistor Q12 is connected to the base and the collector of the transistor Q13. The emitter of the transistor Q13 is grounded. The emitter of the transistor Q14 is connected to the power supply VCC, the collector is connected to the collector of the transistor Q15, and the base is connected to the base of the transistor Q8. The collector of the transistor Q15 is connected to the base, the emitter is connected to the collector of the transistor Q16, and the base is connected to the base of the transistor Q4. The emitter of the transistor Q16 is grounded, and the collector is connected to the base.

此时,三极管Q8、三极管Q9、三极管Q10和电阻R1构成如上述实施例中的偏置电路13,三极管Q11、三极管Q12和三极管Q13构成如上述实施例中的第一输入电压电路14,三极管Q14、三极管Q15和三极管Q16构成如上述实施例中的第二输入电压电路15。三极管Q6和三极管Q7构成如上述实施例中的放大电路12,三极管Q1、三极管Q2、三极管Q3和三极管Q4构成如上述实施例中的推挽电路11。其中,三极管Q3和三极管Q4构成如上述实施例中的推挽电路11中的电平移位电路111。At this time, the transistor Q8, the transistor Q9, the transistor Q10 and the resistor R1 constitute the bias circuit 13 as in the above embodiment, the transistor Q11, the transistor Q12 and the transistor Q13 constitute the first input voltage circuit 14 as in the above embodiment, the transistor Q14 , the transistor Q15 and the transistor Q16 constitute the second input voltage circuit 15 as in the above embodiment. The transistor Q6 and the transistor Q7 constitute the amplifying circuit 12 in the above embodiment, and the transistor Q1, the transistor Q2, the transistor Q3 and the transistor Q4 constitute the push-pull circuit 11 in the above embodiment. Among them, the transistor Q3 and the transistor Q4 constitute the level shift circuit 111 in the push-pull circuit 11 as in the above embodiment.

在一些实施例中,参阅图8,以晶体管为三极管为例,进行说明:In some embodiments, referring to FIG. 8 , the transistor is a triode as an example to illustrate:

放大器电路包括三极管Q1、三极管Q2、三极管Q3、三极管Q4、三极管Q7、三极管Q8、三极管Q9、三极管Q10、三极管Q11、三极管Q12、三极管Q13、三极管Q14、三极管Q15、三极管Q16、三极管Q17、三极管Q18和电阻R1。The amplifier circuit includes transistor Q1, transistor Q2, transistor Q3, transistor Q4, transistor Q7, transistor Q8, transistor Q9, transistor Q10, transistor Q11, transistor Q12, transistor Q13, transistor Q14, transistor Q15, transistor Q16, transistor Q17, transistor Q18 and resistor R1.

其中,三极管Q1、三极管Q3、三极管Q8、三极管Q9、三极管Q11、三极管Q12、三极管Q14、三极管Q17和三极管Q18为PNP型三极管,三极管Q2、三极管Q4、三极管Q7、三极管Q10、三极管Q13、三极管Q15和三极管Q16为NPN型三极管。Among them, triode Q1, triode Q3, triode Q8, triode Q9, triode Q11, triode Q12, triode Q14, triode Q17 and triode Q18 are PNP type triodes, triode Q2, triode Q4, triode Q7, triode Q10, triode Q13, triode Q15 And the transistor Q16 is an NPN type transistor.

三极管Q1的发射极连接电源VCC,集电极连接三极管Q2的集电极以及输出端OUT,基极连接三极管Q17的集电极、三极管Q3的发射极以及三极管Q4的集电极。三极管Q2的集电极连接输出端,发射极接地,基极连接三极管Q7的集电极、三极管Q3的集电极以及三极管Q4的发射极。三极管Q3的基极连接三极管Q12的基极。三极管Q4的基极连接三极管Q15的基极。三极管Q7的基极连接三极管Q9的集电极,发射极接地。三极管Q8的发射极连接电源VCC,集电极连接电阻R1的第一端以及基极,基极连接三极管Q9的基极。其中,电阻R1的另一端接地。The emitter of the transistor Q1 is connected to the power supply VCC, the collector is connected to the collector of the transistor Q2 and the output terminal OUT, and the base is connected to the collector of the transistor Q17, the emitter of the transistor Q3 and the collector of the transistor Q4. The collector of the transistor Q2 is connected to the output terminal, the emitter is grounded, and the base is connected to the collector of the transistor Q7, the collector of the transistor Q3 and the emitter of the transistor Q4. The base of the transistor Q3 is connected to the base of the transistor Q12. The base of the transistor Q4 is connected to the base of the transistor Q15. The base of the transistor Q7 is connected to the collector of the transistor Q9, and the emitter is grounded. The emitter of the transistor Q8 is connected to the power supply VCC, the collector is connected to the first end of the resistor R1 and the base, and the base is connected to the base of the transistor Q9. The other end of the resistor R1 is grounded.

三极管Q9的发射极连接电源VCC,集电极连接三极管Q10的集电极。三极管Q10的基极连接三极管Q9的集电极以及三极管Q13的基极。三极管Q11的基极连接电源VCC,集电极连接基极以及三极管Q12的发射极。三极管Q12的集电极连接基极以及三极管Q13的集电极。三极管Q13的发射极接地。三极管Q14的发射极连接电源VCC,集电极连接三极管Q15的集电极,基极连接三极管Q8的基极。三极管Q15的集电极连接基极,发射极连接三极管Q16的集电极,基极连接三极管Q4的基极。三极管Q16的发射极接地,集电极连接基极。三极管Q17的发射极连接三极管Q18的集电极,集电极连接三极管Q3的发射极、三极管Q4的集电极以及三极管Q1的基极,基极连接三极管Q8的基极。三极管Q18的发射极连接电源VCC,基极用于接收输入信号IN。The emitter of the transistor Q9 is connected to the power supply VCC, and the collector is connected to the collector of the transistor Q10. The base of the transistor Q10 is connected to the collector of the transistor Q9 and the base of the transistor Q13. The base of the transistor Q11 is connected to the power supply VCC, and the collector is connected to the base and the emitter of the transistor Q12. The collector of the transistor Q12 is connected to the base and the collector of the transistor Q13. The emitter of the transistor Q13 is grounded. The emitter of the transistor Q14 is connected to the power supply VCC, the collector is connected to the collector of the transistor Q15, and the base is connected to the base of the transistor Q8. The collector of the transistor Q15 is connected to the base, the emitter is connected to the collector of the transistor Q16, and the base is connected to the base of the transistor Q4. The emitter of the transistor Q16 is grounded, and the collector is connected to the base. The emitter of the transistor Q17 is connected to the collector of the transistor Q18, the collector is connected to the emitter of the transistor Q3, the collector of the transistor Q4 and the base of the transistor Q1, and the base is connected to the base of the transistor Q8. The emitter of the transistor Q18 is connected to the power supply VCC, and the base is used to receive the input signal IN.

此时,三极管Q8、三极管Q9、三极管Q10和电阻R1构成如上述实施例中的偏置电路13,三极管Q11、三极管Q12和三极管Q13构成如上述实施例中的第一输入电压电路14,三极管Q14、三极管Q15和三极管Q16构成如上述实施例中的第二输入电压电路15。三极管Q17和三极管Q18构成如上述实施例中的放大电路12,三极管Q1、三极管Q2、三极管Q3和三极管Q4构成如上述实施例中的推挽电路11。其中,三极管Q3和三极管Q4构成如上述实施例中的推挽电路11中的电平移位电路111。At this time, the transistor Q8, the transistor Q9, the transistor Q10 and the resistor R1 constitute the bias circuit 13 as in the above embodiment, the transistor Q11, the transistor Q12 and the transistor Q13 constitute the first input voltage circuit 14 as in the above embodiment, the transistor Q14 , the transistor Q15 and the transistor Q16 constitute the second input voltage circuit 15 as in the above embodiment. The triode Q17 and the triode Q18 constitute the amplifier circuit 12 in the above embodiment, and the triode Q1, the triode Q2, the triode Q3 and the triode Q4 constitute the push-pull circuit 11 in the above embodiment. Among them, the transistor Q3 and the transistor Q4 constitute the level shift circuit 111 in the push-pull circuit 11 as in the above embodiment.

通过上述方式,使输入信号IN在三极管Q18和三极管Q17放大输出至B点,在推挽电路再次放大,能够提升放大器电路对输入信号处理的增益和放大速度。Through the above method, the input signal IN is amplified and output to point B in the transistors Q18 and Q17, and amplified again in the push-pull circuit, which can improve the gain and amplifying speed of the input signal processing by the amplifier circuit.

参阅图9,图9是本申请提供的电子设备一实施例的结构示意图。该电子设备90包括放大器电路91和控制器92。Referring to FIG. 9 , FIG. 9 is a schematic structural diagram of an embodiment of an electronic device provided by the present application. The electronic device 90 includes an amplifier circuit 91 and a controller 92 .

其中,放大器电路91如上述任一实施例中提供的放大器电路。控制器92连接放大器电路91,用于向放大器电路91输入信号,以使放大器电路91对输入信号进行放大。Wherein, the amplifier circuit 91 is the amplifier circuit provided in any of the above embodiments. The controller 92 is connected to the amplifier circuit 91 for inputting a signal to the amplifier circuit 91, so that the amplifier circuit 91 amplifies the input signal.

在一些实例中,放大器电路91设置于电路板上,电路板设置于电子设备90。In some examples, amplifier circuit 91 is provided on a circuit board, which is provided on electronic device 90 .

在一些实施例中,电子设备可以是移动终端,如手机,也可以是家用电器,如空调、冰箱、洗衣机和微波炉等,还可以是可穿戴设备,如智能手环、智能手表,还可以是电脑、打印机,传真机、一体机等终端设备。还可以是相应的电子生产设备,如贴片机和自动焊接等。In some embodiments, the electronic device may be a mobile terminal, such as a mobile phone, a household appliance, such as an air conditioner, a refrigerator, a washing machine, a microwave oven, etc., or a wearable device, such as a smart bracelet, a smart watch, or a Computers, printers, fax machines, all-in-one machines and other terminal equipment. It can also be the corresponding electronic production equipment, such as placement machines and automatic welding.

通过上述方式,电子设备中的放大器电路能够提升对控制器输入信号处理的增益和放大速度,进而提升电子设备的工作效率和性能。In the above manner, the amplifier circuit in the electronic device can improve the gain and amplifying speed of processing the input signal of the controller, thereby improving the working efficiency and performance of the electronic device.

以上所述仅为本申请的实施方式,并非因此限制本申请的专利范围,凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本申请的专利保护范围内。The above description is only an embodiment of the present application, and is not intended to limit the scope of the patent of the present application. Any equivalent structure or equivalent process transformation made by using the contents of the description and drawings of the present application, or directly or indirectly applied to other related technologies Fields are similarly included within the scope of patent protection of this application.

Claims (10)

1. An amplifier circuit, comprising:
a push-pull circuit comprising:
a first transistor, a first terminal of which inputs a power supply signal and a second terminal of which is used for output;
a second transistor, wherein a first end of the second transistor is connected to a second end of the first transistor, and a second end of the second transistor is grounded;
a first end of the level shift circuit is connected with the control end of the first transistor, and a second end of the level shift circuit is connected with the control end of the second transistor;
and the amplifying circuit is connected with the control end of the second transistor, and is used for generating an amplifying signal under the action of an input signal and inputting the amplifying signal to the control end of the second transistor.
2. The amplifier circuit of claim 1,
the level shift circuit includes:
a third transistor, wherein a first terminal of the third transistor is connected to the control terminal of the first transistor, and a second terminal of the third transistor is connected to the control terminal of the second transistor;
a first end of the fourth transistor is connected with the control end of the first transistor, and a second end of the fourth transistor is connected with the control end of the second transistor.
3. The amplifier circuit of claim 2,
the amplifier circuit further comprises a constant current source, wherein the first end of the constant current source inputs the power supply signal, and the second end of the constant current source is connected with the control end of the first transistor.
4. The amplifier circuit of claim 3,
the amplification circuit includes a sixth transistor and a seventh transistor:
a first end of the sixth transistor is connected to the second end of the seventh transistor, a second end of the sixth transistor is grounded, and a control end of the sixth transistor is used for inputting a signal;
and the first end of the seventh transistor is connected with the control end of the second transistor.
5. The amplifier circuit of claim 4,
the amplifier circuit further comprises a bias circuit;
the first end of the bias circuit inputs the power supply signal, the second end of the bias circuit is connected with the control end of the fifth transistor, the third end of the bias circuit is connected with the control end of the seventh transistor, and the fourth end of the bias circuit is grounded.
6. The amplifier circuit of claim 5,
the bias circuit comprises an eighth transistor, a ninth transistor, a tenth transistor and a resistor;
a first end of the eighth transistor is used for inputting a power supply signal, and a second end of the eighth transistor is connected with a control end of the eighth transistor and a control end of the ninth transistor;
a first end of the ninth transistor is used for inputting a power supply signal, and a second end of the ninth transistor is connected with the control end of the seventh transistor;
the first end of the resistor is connected with the eighth transistor, and the second end of the resistor is grounded;
a first terminal of the tenth transistor is connected to a second terminal of the ninth transistor; the second end of the tenth transistor is grounded, and the control end of the tenth transistor is connected with the third end of the bias circuit.
7. The amplifier circuit of claim 2,
the amplifying circuit includes an eleventh transistor and a twelfth transistor;
a first end of the twelfth transistor is used for inputting a power supply signal, a second end of the twelfth transistor is connected with a first end of the eleventh transistor, a control end of the twelfth transistor is used for inputting a signal, and a second end of the eleventh transistor is connected with a control end of the first transistor.
8. The amplifier circuit of claim 1,
the amplifier circuit further comprises a first input voltage circuit;
the first input voltage circuit includes:
a thirteenth transistor, wherein a first terminal of the thirteenth transistor is input with a power supply signal, and a second terminal of the thirteenth transistor is connected with a control terminal of the thirteenth transistor;
a fourteenth transistor, a first terminal of the fourteenth transistor is connected to the second terminal of the thirteenth transistor, a second terminal of the fourteenth transistor is connected to the control terminal of the fourteenth transistor and the first control terminal of the level shift circuit, and the fourteenth transistor is configured to provide the first reference voltage to the level shift circuit;
a fifteenth transistor, a first end of the fifteenth transistor being connected to the second end of the fourteenth transistor, a second end of the fifteenth transistor being grounded, and a control end of the fifteenth transistor being configured to receive a control signal.
9. The amplifier circuit of claim 1,
the amplifier circuit further comprises a second input voltage circuit;
the second input voltage circuit includes:
a sixteenth transistor, a first end of the sixteenth transistor inputs a power signal, a second end of the sixteenth transistor is connected to the second control end of the level shift circuit, and is configured to provide a second reference voltage to the level shift circuit;
a seventeenth transistor, wherein a first terminal and a control terminal of the seventeenth transistor are connected to a second terminal of the sixteenth transistor;
and a first end of the eighteenth transistor is connected with the second end of the seventeenth transistor, a second end of the eighteenth transistor is grounded, and a control end of the eighteenth transistor is connected with the second end of the seventeenth transistor.
10. An electronic device, characterized in that the electronic device comprises:
an amplifier circuit as claimed in any one of claims 1 to 9;
and the controller is connected with the amplifier circuit and is used for inputting signals to the amplifier circuit so that the amplifier circuit amplifies the input signals.
CN202011406440.9A 2020-12-02 2020-12-02 Amplifier circuit and electronic device Pending CN114584085A (en)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1221206A (en) * 1997-12-26 1999-06-30 株式会社日立制作所 Level shift circuit and semiconductor integrated circuit device using the same
US20050242839A1 (en) * 2004-04-30 2005-11-03 Nec Electronics Corporation Signal amplifier
KR100711516B1 (en) * 2006-02-14 2007-04-27 한양대학교 산학협력단 Low power and small area capacitively coupled level shift circuit
CN103595360A (en) * 2013-09-24 2014-02-19 南京中科微电子有限公司 Operational amplifier with Miller compensation structure
JP2017168965A (en) * 2016-03-15 2017-09-21 力晶科技股▲ふん▼有限公司 Level shift circuit
CN109728786A (en) * 2019-03-01 2019-05-07 赣南师范大学 A High-Gain Two-Stage Operational Transconductance Amplifier with Crossover Structure
CN110806779A (en) * 2019-11-20 2020-02-18 佛山科学技术学院 Push-pull type LDO circuit based on voltage flip follower structure

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1221206A (en) * 1997-12-26 1999-06-30 株式会社日立制作所 Level shift circuit and semiconductor integrated circuit device using the same
US20050242839A1 (en) * 2004-04-30 2005-11-03 Nec Electronics Corporation Signal amplifier
KR100711516B1 (en) * 2006-02-14 2007-04-27 한양대학교 산학협력단 Low power and small area capacitively coupled level shift circuit
CN103595360A (en) * 2013-09-24 2014-02-19 南京中科微电子有限公司 Operational amplifier with Miller compensation structure
JP2017168965A (en) * 2016-03-15 2017-09-21 力晶科技股▲ふん▼有限公司 Level shift circuit
CN109728786A (en) * 2019-03-01 2019-05-07 赣南师范大学 A High-Gain Two-Stage Operational Transconductance Amplifier with Crossover Structure
CN110806779A (en) * 2019-11-20 2020-02-18 佛山科学技术学院 Push-pull type LDO circuit based on voltage flip follower structure

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