CN114645251B - Method for changing PN type of semiconductor material - Google Patents

Abstract

A preparation method for changing PN type of semiconductor material relates to the field of semiconductor material. And depositing the zinc selenide doped semiconductor on the surface of the substrate to form a semiconductor film, and controlling the PN type of the semiconductor film on the substrate by controlling the preparation conditions. In the preparation process, the preparation of the film is finished by adopting a pulse laser deposition technology, and the substrate is made of quartz glass. The semiconductor material is prepared by a pulse laser deposition method, and is realized by the following technical scheme: firstly, preparing ZnSe by adopting a solid reaction sintering method _0.4 :Mo _0.3 :Ga _0.3 And preparing ZnSe/Mo/Ga films by adopting a pulse laser deposition method for the ceramic target, and controlling different preparation conditions to obtain semiconductor films with different PN characteristics. The invention has good crystallization quality and smooth surface, has a nano structure, and can realize the purpose of changing PN type of the film of the same target material by controlling the preparation conditions.

Description

A method for changing the PN type of semiconductor material

technical field

The invention relates to the field of semiconductor materials, in particular to a PN type preparation method which can change materials by changing preparation parameters.

Background technique

P-type semiconductors, also known as hole-type semiconductors, are semiconductors dominated by positively charged holes. Holes act as positively charged particles and play a major role in the conduction of these semiconductors. N-type semiconductors are also called electron-type semiconductors. That is, an impurity semiconductor with a free electron concentration much greater than a hole concentration. When the P-type semiconductor and the N-type semiconductor are in close contact, a PN junction structure will be generated, which will generate a space charge region near the contact surface. According to this characteristic, crystal diodes with various functions can be manufactured by using the PN junction, and are widely used in modern industries.

At present, the P-type semiconductor and the N-type semiconductor in the PN junction are generally obtained by complex and different doping preparation processes. Utilizing the different characteristics of the PN junction, it can have different applications, such as: rectifier diodes, detector diodes, avalanche diodes, tunnel diodes, varactor diodes, semiconductor laser diodes, photodetectors and solar cells. Therefore, the properties of various P-type semiconductors and N-type semiconductors are required in practical applications. The current method is inevitably accompanied by disadvantages such as complex process, long preparation cycle, invariable composition, high cost, and large finished product size, and it is difficult to better adapt to the current industrial requirements.

Contents of the invention

The object of the present invention is a new method for changing the PN type of semiconductor materials.

In the invention, a zinc selenide doped semiconductor is deposited on the substrate surface to form a semiconductor thin film, and the purpose of controlling the PN type of the semiconductor thin film on the substrate is achieved by controlling the preparation conditions. In the preparation process, the pulse laser deposition technology (Pulse Laser deposition, PLD) is selected to complete the preparation of the thin film, and the substrate is selected to use quartz glass. The above-mentioned target material is ZnSe _0.4 :Mo _0.3 :Ga _0.3 semiconductor doped material.

The semiconductor material of the present invention is prepared by a pulsed laser deposition method, which is realized by adopting the following technical scheme: first adopting a solid reaction sintering method to prepare a ZnSe _0.4 :Mo _0.3 :Ga _0.3 ceramic target material, and then adopting a pulsed laser deposition method to prepare ZnSe:Mo: For Ga thin films, semiconductor thin films with different PN characteristics can be obtained by controlling different preparation conditions.

Specific steps are as follows:

1) Preparation of ZnSe _0.4 : Mo _0.3 : Ga _0.3 ceramic target:

Sintering is an essential part of the ceramic production process. Adopt solid state reaction sintering method to prepare ZnSe among the present invention: Mo: Ga ceramic material, its molar ratio is 4:3:3; Utilize electronic balance to ZnSe (99.99%), Mo (99.99%) and The powder of Ga ₂ O ₃ (99.999%) was weighed, and the powder was manually ground in an agate mortar for 2 hours, and then ground in a ball mill for 6 hours; the mixed powder was pressed into a cylindrical mold with a pressure of 10 MPa for 15 minutes to complete Preparation of cylindrical bulk materials; the resulting bulk materials were sintered at a temperature of 1800 °C for 8 hours, sintered in a high-temperature tube furnace, and an Ar atmosphere was added during the sintering process to eliminate the influence of oxygen, followed by repeated grinding to finally obtain ZnSe0. 4:Mo0.3:Ga0.3 ceramic material;

2) Growth of ZnSe:Mo:Ga film:

With the ZnSe _0.4 :Mo _0.3 :Ga _0.3 ceramic prepared in step 1) as the target material, with quartz glass as the substrate, the ZnSe:Mo:Ga thin film was prepared by pulsed laser deposition method, the pulsed laser pulse width was 10ns, and the repetition rate was 10Hz, the single pulse energy is 200mJ; the pulse laser passes through the convex lens and the vacuum cavity window, and finally focuses on the target surface; when the laser is focused on the target surface, the plasma plume is splashed to the substrate surface, and finally the The nanometer film is deposited on the surface of the substrate; during the deposition process, the average laser power is set to 400mw, and the deposition time is strictly controlled at 30min; the temperature of pulsed laser deposition is 25°C-800°C, and the pressure is 4Pa-10Pa; adjust the above temperature according to Or/and pressure can obtain P-type or N-type materials, and then change the PN type of semiconductor materials.

On the basis of obtaining the P-type material, the N-type material can be obtained by increasing the temperature or/and increasing the pressure.

The beneficial effect that the present invention has:

The invention only uses the same semiconductor target material and adopts the pulse laser deposition method to prepare completely different PN-type semiconductor thin films with nanostructure, good crystal quality and smooth surface, which creates good preconditions for expanding and optimizing semiconductor applications.

Description of drawings

Fig. 1 is the ZnSe:Mo:Ga thin film physical picture and XRD spectrum that the embodiment 1 prepares.

Fig. 2 is the physical figure and XRD spectrum of the ZnSe:Mo:Ga film prepared in Example 2.

Detailed ways

The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments. , but the present invention is not limited to the following examples.

The physical map and XRD pattern of the prepared ZnSe:Mo:Ga thin film are shown in Figure 1. Combining with Table 1 at the end, it can be concluded that the diffraction peak in the thin film sample is basically only the Mo(110) peak at the position of 40.5°. On the curve at 10 Pa and 800°C, a broad peak was found in the diffraction range from 35° to 40°. By comparison, it can be found that the diffraction peak belongs to _{the Ga2O3} component. The broad peak represents an amorphous structure, which proves that the crystallization _{of Ga2O3} is incomplete under this condition. At the same time, with the increase of temperature and pressure, only at 10Pa and 800°C, the resistivity of the film will change significantly, and the resistivity will decrease with the increase of carrier concentration. The results show that the P-type and N-type of the film can be controlled.

Example 1

1) Preparation of ZnSe _0.4 : Mo _0.3 : Ga _0.3 ceramic target:

Sintering is an essential part of the ceramic production process. In the present invention, a ZnSe:Mo:Ga ceramic material is prepared by a solid-state reaction sintering method, and the proportions thereof are respectively 4:3:3. The powders of ZnSe (99.99%), Mo (99.99%) and Ga ₂ O ₃ (99.999%) were weighed with an electronic balance according to the stoichiometric ratio. The powder was manually ground in an agate mortar for 2 hours and then in a ball mill for 6 hours. The mixed powder was pressed into a F20 mm cylindrical mold with a pressure of 10 MPa for 15 minutes to complete the preparation of cylindrical bulk materials. The bulk material was sintered at 1800°C for 8 hours. In a high temperature tube furnace, an Ar atmosphere is added during sintering to eliminate the effect of oxygen. The process after grinding (including grinding) is repeated twice to finally obtain a ZnSe0.4:Mo0.3:Ga0.3 ceramic material.

2) Growth of ZnSe:Mo:Ga film:

With the ZnSe _0.4 : Mo _0.3 : Ga _0.3 ceramics prepared in step 1) as the target material, and the quartz glass as the substrate, the ZnSe: Mo: Ga film was prepared by pulse deposition method, using 355nm (Nd: YAG, GCR-170) As an ultraviolet light source, the pulse width is 10ns, the repetition frequency is 10Hz, and the single pulse energy is 200mJ. The pulsed laser passes through the convex lens and the window of the vacuum cavity, and finally focuses on the target surface. When the laser is focused on the surface of the target, the plasma plume is splashed onto the surface of the substrate, and finally a nanometer film is deposited on the surface of the substrate opposite to the target. During the deposition process, the average laser power was set to 400mw, and the deposition time was strictly controlled at 30min. The preparation pressure is 0.45Pa, and the temperature is 25°C, 400°C, 800°C.

Example 2

1) with step 1) among the embodiment 1;

2) Except changing the deposition condition to 4Pa, 6Pa and 10Pa at a temperature of 25°C, other operations are the same as step 2 in Example 1);

Table 1 Hall effect detection results of the p-n junction film prepared in Example 1-2.

Claims (3)

1. A method of modifying the PN pattern of a semiconductor material, comprising the steps of:

1) Preparation of ZnSe _0.4 :Mo _0.3 :Ga _0.3 Ceramic target material:

2) Growing ZnSe: mo: ga film:

ZnSe prepared in step 1) _0.4 :Mo _0.3 :Ga _0.3 Taking ceramic as a target material, taking quartz glass as a substrate, adopting a pulse laser deposition method to prepare a ZnSe: ga film, wherein the pulse width of pulse laser is 10ns, the repetition frequency is 10Hz, and the single pulse energy is 200mJ; the pulse laser passes through the convex lens and the vacuum cavity window and finally focuses on the surface of the target; when the laser is focused on the surface of the target, the plasma plume is splashed onto the surface of the substrate, and finally, a nano film is deposited on the surface of the substrate opposite to the target; in the deposition process, the average laser power is set to 400mw, and the deposition time is strictly controlled to be 30min; the temperature of the pulsed laser deposition is 25-800 ℃ and the pressure is 4-10 Pa; the P-type or N-type material can be obtained according to the adjustment of the temperature and/or pressure, thereby changing the semiconductor materialPN material.

2. The method for changing PN type of semiconductor material according to claim 1, wherein the step 1) adopts a solid phase reaction sintering method to prepare ZnSe: mo: ga ceramic material, and the molar ratio of the ZnSe to Ga ceramic material is 4:3:3; znSe with purity of 99.99%, mo with purity of 99.99% and Ga with purity of 99.999% are combined according to stoichiometric ratio by using an electronic balance ₂ O ₃ The powder was weighed, manually milled in agate mortar for 2 hours, then in a ball mill for 6 hours; pressing the mixed powder into a cylindrical mold with a pressure of 10MPa for 15 minutes to complete the preparation of cylindrical bulk materials; the obtained block material was sintered at 1800 ℃ for 8 hours in a high temperature tube furnace, an Ar atmosphere was added during the sintering to eliminate the influence of oxygen, and then repeated grinding was performed to finally obtain znse0.4:mo0.3:ga0.3 ceramic material.

3. A method for modifying a PN-type semiconductor material according to claim 1, characterized in that the N-type material is obtained by increasing the temperature and/or increasing the pressure on the basis of the P-type material.