CN114649189B - Dry etching equipment - Google Patents

Abstract

The invention discloses a dry etching device. The dry etching apparatus includes an etching chamber, a first electrode, an upper substrate, a second electrode, and a support member; wherein the first electrode is positioned at one side of the etching cavity; the upper substrate is positioned on one side of the first electrode away from the etching cavity; the second electrode is positioned at the other side of the etching cavity and is arranged opposite to the first electrode; one side of the supporting member is connected with the first electrode, the other side of the supporting member is connected with the upper substrate, and a low-resistance layer is arranged on the outer surface of the supporting member, which is connected with the first electrode or the upper substrate. The support member can support the connection between the first electrode and the upper substrate, and the low-resistance layer can reduce friction between the support member and the first electrode as well as between the support member and the upper substrate, reduce particles generated by friction and improve the yield of products.

Description

Dry etching equipment

Technical Field

The present invention relates to the field of display technology, and in particular to a dry etching device.

Background Art

In the manufacturing process of display panels, TFT (thin film transistor) dry etching is a very important process. As the display panel continues to increase, the area of the upper electrode of the dry etching equipment also increases. In order to better support the upper electrode of the dry etching equipment, it is necessary to increase the number of support columns to improve the support for the upper electrode.

However, the increase in the number of support pillars will cause more friction between the support pillars and the upper electrode and the upper electrode substrate, thereby causing a large number of particles to be generated at the support pillar positions of the dry etching equipment, affecting the product yield.

Summary of the invention

Based on the above-mentioned deficiencies in the prior art, an object of the present invention is to provide a dry etching device, which can reduce the generation of particles in the dry etching device.

To achieve the above object, the present invention provides a dry etching device, comprising:

Etching chamber;

A first electrode, located at one side of the etching chamber;

an upper substrate, located on a side of the first electrode away from the etching chamber;

A second electrode is located at the other side of the etching chamber and is arranged opposite to the first electrode;

The support member has one side connected to the first electrode and the other side connected to the upper substrate. The outer surface of the support member connected to the first electrode or the upper substrate is provided with a low resistance layer.

Optionally, the support member includes an upper support surface and a lower support surface relative to each other, the upper support surface is connected to the upper substrate, the lower support surface is connected to the first electrode, and outer surfaces of the upper support surface and the lower support surface are both provided with a low-resistance layer.

Optionally, the low resistance layer comprises a polytetrafluoroethylene layer.

Optionally, the polytetrafluoroethylene layer contains metal particles.

Optionally, the support member includes a conductive material for electrically connecting the upper substrate and the first electrode.

Optionally, a first connecting member is further included, one end of the first connecting member is connected to the upper substrate, and the other end of the first connecting member is connected to the supporting member.

Optionally, the support member is formed with a first connecting hole, and the first connecting member is at least partially received in the first connecting hole.

Optionally, a second connecting member is further included, one end of the second connecting member is connected to the first electrode, and the other end of the second connecting member is connected to the supporting member.

Optionally, the supporting member is formed with a second connecting hole, the second connecting hole includes a second receiving portion and a second connecting portion that are interconnected, and the aperture of the second receiving portion is larger than the aperture of the second connecting portion; the second connecting member is at least partially received in the second connecting hole, and one end of the second connecting member is clamped at the connection between the second receiving portion and the second connecting portion.

Optionally, the first connection hole is located in a middle area of the support member, and the second connection hole is located in an edge area of the support member.

Compared with the prior art, the beneficial effects of the present invention include: providing a dry etching device, including an etching chamber, a first electrode, an upper substrate, a second electrode and a supporting member; wherein the first electrode is located on one side of the etching chamber; the upper substrate is located on the side of the first electrode away from the etching chamber; the second electrode is located on the other side of the etching chamber, and is arranged opposite to the first electrode; one side of the supporting member is connected to the first electrode, and the other side is connected to the upper substrate, and the outer surface of the supporting member connected to the first electrode or the upper substrate is provided with a low resistance layer. In the present invention, the supporting member can support the connection between the first electrode and the upper substrate, and the low resistance layer can reduce the friction between the supporting member and the first electrode and the upper substrate, reduce the particles generated by the friction, and improve the product yield.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to more clearly illustrate the technical solutions in the embodiments or the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

FIG1 is a schematic structural diagram of a dry etching device according to an embodiment of the present invention;

FIG2 is a schematic structural diagram of a supporting member according to an embodiment of the present invention;

3 is a schematic structural diagram of a support surface on a support member according to an embodiment of the present invention;

4 is a schematic structural diagram of the lower supporting surface of the supporting member according to an embodiment of the present invention;

5 is a cross-sectional view of a support member and an upper substrate according to an embodiment of the present invention;

FIG. 6 is a second structural schematic diagram of the dry etching equipment according to an embodiment of the present invention.

DETAILED DESCRIPTION

The following descriptions of the embodiments are with reference to the attached diagrams to illustrate specific embodiments in which the present invention can be implemented. In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or can communicate with each other; it can be directly connected, or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. At the same time, the terms "first" and "second" in the present invention are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" can explicitly or implicitly include one or more of the said features. In the description of the present invention, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to the specific circumstances.

An embodiment of the present invention provides a dry etching device, as shown in Figure 1, comprising an etching chamber 1, a first electrode 2, an upper substrate 3, a second electrode 4 and a supporting member 5; wherein the first electrode 2 is located on one side of the etching chamber 1; the upper substrate 3 is located on the side of the first electrode 2 away from the etching chamber 1; the second electrode 4 is located on the other side of the etching chamber 1, and is arranged opposite to the first electrode 2; one side of the supporting member 5 is connected to the first electrode 2, and the other side is connected to the upper substrate 3, and the outer surface of the upper supporting member 5 connected to the first electrode 2 or the upper substrate 3 is provided with a low-resistance layer 9.

This embodiment adopts the above structural design, the support member 5 can support the connection between the first electrode 2 and the upper substrate 3, and the low-resistance layer 9 can reduce the friction between the support member 5 and the first electrode 2 and the upper substrate 3, reduce the particles generated by friction, and improve the product yield.

In one embodiment, as shown in FIGS. 2 to 4 , the support member 5 includes an upper support surface 51 and a lower support surface 52 opposite to each other, the upper support surface 51 is connected to the upper substrate 3, the lower support surface 52 is connected to the first electrode 2, and the outer surfaces of the upper support surface 51 and the lower support surface 52 are both provided with a low-resistance layer 9. In this way, a stable connection can be formed between the first electrode 2 and the upper substrate 3, and a certain lubricity can be maintained to reduce particles generated by friction.

In one embodiment, the low resistance layer 9 includes a polytetrafluoroethylene layer.

Among them, polytetrafluoroethylene (PTFE) is a high molecular polymer obtained by polymerization of tetrafluoroethylene as a monomer. Polytetrafluoroethylene is generally white waxy, has the characteristics of low friction coefficient, high lubricity, translucency, heat resistance, cold resistance, etc., and can be used for a long time in an environment of -180 to 260°C. Polytetrafluoroethylene is resistant to acids and alkalis, and various organic solvents, and is almost insoluble in all solvents. The polytetrafluoroethylene layer can effectively reduce the friction between the first electrode 2 and the substrate.

In one embodiment, the polytetrafluoroethylene layer contains metal particles. Adding metal particles to the polytetrafluoroethylene layer can improve the hardness and wear resistance of the low-resistance layer 9.

In one embodiment, the metal particles include nickel-containing particles, such as nickel particles or nickel alloy particles.

Nickel is a hard, ductile and ferromagnetic metal that is highly polishable and corrosion resistant. Adding nickel particles or nickel alloy particles to the polytetrafluoroethylene layer can better improve the hardness and wear resistance of the low resistance layer 9.

In one embodiment, the support member 5 includes a conductive material for electrically connecting the upper substrate 3 and the first electrode 2. The conductive material may include a conductive metal material, which can form a good electrical connection between the upper substrate 3 and the first electrode 2 on the one hand, and can improve the strength of the support member 5 on the other hand.

In one embodiment, as shown in FIG2 , the dry etching device further comprises a first connecting member 6, one end of the first connecting member 6 is connected to the upper substrate 3, and the other end is connected to the supporting member 5. Thus, the upper substrate 3 and the supporting member 5 can be stably connected by the first connecting member 6.

In one embodiment, the support member 5 is formed with a first connection hole A, and the first connection member 6 is at least partially received in the first connection hole A. For example, one end of the first connection member 6 is inserted into the first connection hole A.

In this way, through the first connecting hole A, the first connecting member 6 and the supporting member 5 can be firmly connected.

In one embodiment, as shown in FIG5 , a first gasket C is provided at the connection between the first connection hole A and the first electrode 2, one side of which is in contact with the first connection member 6 and the other side is connected to the first electrode 2. The first gasket C allows the first connection member 6 to form a stable connection with the support member 5 and the first electrode 2. The first gasket C can be a one-layer or multi-layer structure, and in this embodiment, the first gasket can be a two-layer structure. The number of layers of the first gasket C can be adapted according to the length of the first connection member 6 and the depth of the first connection hole A.

In one embodiment, the first gasket C may be a boss structure, including a protruding portion and a flat portion, wherein the flat portion is connected to the first connecting member 6 , and the protruding portion is connected to the first electrode 2 via the first connecting hole A.

In one embodiment, the upper substrate 3 is provided with a third connection hole D at the position corresponding to the first connection hole A of the support member 5, and the third connection hole D includes a third receiving portion D1 and a third connecting portion D2 that are connected to each other, and the third connection hole D is connected to the first connection hole A. The aperture of the third receiving portion D1 is larger than the aperture of the third connecting portion D2, and one end of the first connecting member 6 is clamped at the connection between the third receiving portion D1 and the third connecting portion D2. Optionally, the aperture of the third connecting portion D2 is larger than or equal to the aperture of the first receiving portion A1.

In one embodiment, a second gasket E is provided at the connection between the third receiving portion D1 and the third connecting portion D2 , and one end of the first connecting member 6 is firmly connected to the upper substrate 3 through the second gasket E.

In one embodiment, the dry etching device further includes a second connecting member 7 , one end of the second connecting member 7 is connected to the first electrode 2 , and the other end of the second connecting member 7 is connected to the supporting member 5 .

In this way, the first electrode 2 and the supporting member 5 can be stably connected via the second connecting member 7 .

In one embodiment, the support member 5 is formed with a second connection hole B, and one end of the second connection member 7 is inserted into the second connection hole B. Specifically, as shown in FIG5 , the second connection hole B includes a second receiving portion B1 and a second connecting portion B2 that are connected to each other, and the aperture of the second receiving portion B1 is larger than the aperture of the second connecting portion B2; the second connection member 7 is at least partially received in the second connection hole B, and one end of the second connection member 7 is clamped at the connection between the second receiving portion B1 and the second connecting portion B2.

In this way, through the second connecting hole B, the second connecting member 7 can be firmly connected to the supporting member 5 .

In one embodiment, the first connection hole A is located in the middle area of the support member 5, and the second connection hole B is located in the edge area of the support member 5. There can be one first connection hole A, and there can be multiple second connection holes B, such as four, six, or eight. There can be one corresponding first connection member 6, and there can be multiple second connection members 7.

In one embodiment, the first connecting member 6 and the second connecting member 7 may be rivets, screws or other fasteners for connection. Taking rivets as an example, in this embodiment, the rivet head of the first connecting member 6 is inserted into the upper substrate 3, and the rivet tail thereof is inserted into the supporting member 5 through the first connecting hole A; the rivet head of the first connecting member 6 is inserted into the supporting member 5, and the rivet tail thereof is inserted into the first electrode 2.

In one embodiment, an O-ring may be provided at the position where the end of the first connecting member 6 contacts the upper substrate 3 , so that the connection between the first connecting member 6 and the upper substrate 3 can be tighter.

Similarly, an O-ring may be provided at the position where the end of the second connecting member 7 contacts the supporting member 5. This can make the connection between the second connecting member 7 and the supporting member 5 tighter.

In one embodiment, the first connecting member 6 and the second connecting member 7 are hollow inside, so that the strength of the first connecting member 6 and the second connecting member 7 can be increased.

In one embodiment, there may be a plurality of support members 5. The larger the area of the first electrode 2 and the upper substrate 3, the more support members 5 are needed. For example, there may be 30, 36, 40 or more support members 5.

The working method of the dry etching equipment of this embodiment is as follows:

A gas inlet is connected to the upper part of the etching chamber 1. The pressure is adjusted in the etching chamber 1, and the dry etchant can be excited by a high-frequency power supply (13.56MHz) 13. As a result, the excited dry etchant can be brought into contact with the material placed on the second electrode 4, thereby etching the material. Its structure is as follows: if high-frequency power is applied from a high-frequency power supply while the dry etchant is introduced, a direct current voltage called a bias voltage can be generated between the first electrode 2 and the second electrode 4 due to the difference in the moving speed of ions and electrons in the plasma. The gas in the etching chamber 1 is discharged through a gas exhaust line.

In one embodiment, as shown in FIG6 , the dry etching device further includes an exhaust system 8, which is mounted at the bottom of the etching chamber 1 of the dry etching device. The exhaust system 8 includes an exhaust channel 86, a first control valve 81, a second control valve 82, and an exhaust fan 87. The exhaust channel 86 has a first exhaust port 83, a second exhaust port 84, and an exhaust port 85. The first exhaust port 83 and the second exhaust port 84 extend into the etching chamber 1 through an opening at the bottom of the etching chamber 1 and are respectively arranged on both sides of the base F with the base F as the center. When the exhaust system is running, the gas enters the exhaust channel 86 through the first exhaust ports 83 and 84 under the action of the suction force of the exhaust fan 87, and then is discharged through the exhaust port 85.

The first control valve 81 and the second control valve 82 of the exhaust system 8 are configured to open/close according to the set parameters. The first control valve 81 and the second control valve 82 can control the degree of opening/closing thereof, thereby controlling the exhaust volume per unit time of the first exhaust port 83 and the second exhaust port 84. In the present embodiment, the exhaust system 8 has a cyclic working mode and a non-cyclic working mode. Among them, in the non-cyclic working mode, the first control valve 81 and the second control valve 82 are opened to exhaust at the same time; in the cyclic working mode, the first control valve 81 and the second control valve 82 are opened/closed in sequence for a certain time interval, thereby controlling the flow direction of the etching gas in the etching chamber 1, so that the average contact density of the etching gas flowing through different positions of the workpiece to be etched under a specific process is consistent. Of course, in actual situations, the average contact density of the etching gas flowing through different positions of the workpiece to be etched cannot be exactly the same. Therefore, the consistency we are talking about here can only be an approximately identical state. Similarly, in the description after this specification, the consistency mentioned does not refer to being exactly the same, but an approximately identical state.

At the same time, according to the different states of the first control valve 81 and the second control valve 82 of the air extraction system 8, the working state of the air extraction system 8 in the circulation working mode can be further subdivided into a first working state and a second working state.

In the first working state, the first control valve 81 is opened and the second control valve 82 is closed, so that the etching gas enters the exhaust channel 86 from the first exhaust port 83, and the exhaust volume per unit time at the second exhaust port 84 is 0. In this case, the etching gas, under the action of the first electrode 2, the second electrode 4, the air intake system and the exhaust system 8, passes through the second electrode 4, the first exhaust port 83, the exhaust channel 86, and is finally discharged from the exhaust port 85.

In the second working state, the second control valve 82 is opened, and the first control valve 81 is closed, so that the etching gas enters the exhaust channel 86 from the second exhaust port 84, and the exhaust volume per unit time at the first exhaust port 83 is 0. In this case, the etching gas, under the action of the first electrode 2, the second electrode 4, the air intake system and the exhaust system 8, passes through the second electrode 4, the second exhaust port 84, the exhaust channel 86, and is finally discharged from the exhaust port 85.

Looking at one working state of the exhaust system 8 alone, the flow direction and flow rate of the etching gas are different for different positions of the substrate material. Therefore, in one working state, the contact density of the etching gas contacted by different positions of the substrate material per unit time is different, and the total amount of etching gas contacted by different positions of the substrate material in the entire working state is also different. However, looking at the two working states of the exhaust system 8 comprehensively, in the first working state and the second working state, in the horizontal direction, the flow direction of the etching gas is opposite, and the total gas volume of the etching gas flowing in opposite directions in its entire working state is approximately complementary. That is, in the first working state, the total amount of etching gas contacted by the substrate material is relatively small in other areas, and in the second working state, the total amount of etching gas contacted is relatively large in other areas. In this way, overall, in the two working states, the total amount of etching gas contacted by different positions of the substrate material is consistent, thereby improving the uniformity of the substrate process.

The execution of two working states in sequence is counted as one pumping cycle. The complete and repeated execution of the pumping cycle during the etching process can make the total amount of etching gas contacted by different positions of the substrate material during the entire etching process tend to be uniform, thereby ensuring that the etching degree of different positions of the substrate material is consistent during the entire etching process, thereby maximizing the processing quality and yield of the etching process.

In the dry etching process, because the air pressure in the etching chamber 1 of the dry etching equipment needs to be kept at a constant value, it is required that the total amount of air extraction of the exhaust system needs to be set according to the air pressure value in the chamber and the total amount of air intake of the air intake system before the exhaust system is operated. And in the entire etching process, if the total amount of air intake of the air intake system per unit time remains unchanged, the total amount of air extraction of the exhaust system per unit time cannot change. That is, the control valve of the dry etching equipment per unit time is controlled to make the exhaust system exhaust air with a constant total amount of air extraction, thereby keeping the air pressure inside the etching chamber 1 unchanged. This requires that when the exhaust system of this embodiment is in operation, during the process of reducing/increasing the exhaust volume per unit time of one exhaust port, the exhaust volume per unit time of another exhaust port increases/decreases by the same amount, that is, the working state is switched under the premise of ensuring that the total amount of air extraction per unit time of the two exhaust ports remains unchanged, so as to avoid insufficient or excessive exhaust leading to unstable air pressure inside the etching chamber 1.

During the normal operation of the exhaust system of the present invention, the control valve needs to be controlled to slowly change the flow direction of the etching gas in the cavity, so as to maintain the stability of the airflow inside the etching chamber 1. That is, the change of the exhaust volume per unit time of any exhaust port cannot be too fast, and the suction position of the exhaust system for sucking the etching gas cannot be changed quickly, because the rapid changes of the above two will cause a sharp change in the flow direction and flow rate of the etching gas, thereby affecting the stability of the airflow in the etching chamber 1. In this embodiment, when the exhaust system switches the working state, it slowly reduces the exhaust volume per unit time of one exhaust port until it is zero (the exhaust port is closed), and slowly opens another exhaust port, gradually increasing its exhaust volume per unit time. When one exhaust port just reaches the closed state, it is ensured that the other exhaust port has just reached the maximum exhaust volume per unit time set by the system, so that it always meets the principle that the sum of the opening amounts of the two conversion channels is equal to the opening amount of one channel, and avoids insufficient or excessive exhaust gas causing unstable pressure in the etching chamber 1.

The design of the exhaust system 8 only considers the complementary flow of the etching gas in a pair of relative directions on the horizontal plane of the substrate. The exhaust system 8 only includes two exhaust ports. Of course, in actual operation, it is necessary to consider the flow of the etching gas in multiple directions on the horizontal plane of the substrate according to actual conditions. Therefore, in actual operation, it is necessary to design the number of exhaust ports, installation positions, changes in exhaust volume per unit time and other parameters according to factors such as the shape of the substrate surface to be processed, the shape of the upper and lower electrodes, and the shape of the substrate base, so as to achieve more precise control of the etching gas flow direction, so that the total amount of etching gas contacted by different positions of the substrate in one exhaust cycle is consistent.

The dry etching device of this embodiment may specifically include an etching chamber 1, a first electrode 2, an upper substrate, a second electrode 4, a support member 5, a first connector 6, a second connector 7 and an exhaust system 8. Among them, the first electrode 2 is located above the etching chamber 1; the upper substrate is located above the first electrode 2; the second electrode 4 is located below the etching chamber 1 and is arranged opposite to the first electrode 2; one end of the support member 5 is connected to the first electrode 2, and the other end is connected to the upper substrate, and the outer surface of the upper support member 5 connected to the first electrode 2 or the upper substrate 3 is provided with a low resistance layer 9. The support member 5 includes an upper support surface 51 and a lower support surface 52 connected to each other, the upper support surface 51 is connected to the upper substrate, and the lower support surface 52 is connected to the first electrode 2, and the outer surface of the upper support surface 51 or/and the lower support surface 52 is provided with a low resistance layer 9. The low resistance layer 9 is nickel-plated PTFE. One end of the first connector 6 is connected to the upper substrate, and the other end is connected to the support member 5. The support member 5 is formed with a first connection hole A, and one end of the first connector 6 is inserted into the first connection hole A. One end of the second connector 7 is connected to the first electrode 2, and the other end is connected to the support member 5. The support member 5 is formed with a second connection hole B, and one end of the second connector 7 is inserted into the second connection hole B. The first connection hole A is located in the middle area of the support member 5, and the second connection hole B is located in the edge area of the support member 5. There can be one first connection hole A, and there can be multiple second connection holes B. The first connector 6 and the second connector 7 can be rivets, screws or other fasteners for connection. An O-ring can be set at the position where the end of the first connector 6 contacts the upper substrate. An O-ring can be set at the position where the end of the second connector 7 contacts the support member 5. The interior of the first connector 6 and the second connector 7 is hollow. The exhaust system 8 is set at the bottom of the etching chamber 1 of the dry etching equipment. The exhaust system 8 includes an exhaust channel 86, a first control valve 81 and a second control valve 82, and an exhaust fan 87. The exhaust channel 86 has a first exhaust port 83, a second exhaust port 84, and an exhaust port 85. The first exhaust port 83 and the second exhaust port 84 extend into the etching chamber 1 through the opening at the bottom of the etching chamber 1 and are respectively arranged on both sides of the base F with the base F as the center. When the exhaust system is in operation, the gas enters the exhaust channel 86 through the first exhaust ports 83 and 84 under the action of the suction force of the exhaust machine 87, and then is exhausted through the exhaust port 85.

In the dry etching device of this embodiment, the support member 5 can support the connection between the first electrode 2 and the upper substrate. At the same time, the low-resistance layer 9 can reduce the friction between the support member 5 and the first electrode 2 and the upper substrate, reduce the particles generated by friction, and improve the product yield.

The above is only a preferred specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims (5)

1. A dry etching device, comprising: Etching chamber; A first electrode, located at one side of the etching chamber; an upper substrate, located on a side of the first electrode away from the etching chamber; A second electrode, located at the other side of the etching chamber and arranged opposite to the first electrode; a support member, one side of which is connected to the first electrode and the other side of which is connected to the upper substrate, wherein the outer surface of the support member connected to the first electrode or the upper substrate is provided with a low resistance layer to reduce friction between the support member and the first electrode or between the support member and the upper substrate; a first connecting member, wherein one end of the first connecting member is connected to the upper substrate, and the other end of the first connecting member is connected to the supporting member; a second connecting member, one end of the second connecting member being connected to the first electrode, and the other end of the second connecting member being connected to the supporting member; In which, the supporting member is formed with a first connecting hole and a second connecting hole, and the first connecting member is at least partially accommodated in the first connecting hole; the second connecting hole includes a second accommodating portion and a second connecting portion which are interconnected, and the aperture of the second accommodating portion is larger than the aperture of the second connecting portion; the second connecting member is at least partially accommodated in the second connecting hole, and one end of the second connecting member is clamped at the connection between the second accommodating portion and the second connecting portion; the first connecting hole is located in the middle area of the supporting member, and the second connecting hole is located in the edge area of the supporting member. 2. The dry etching equipment according to claim 1 is characterized in that the supporting member includes an upper supporting surface and a lower supporting surface relative to each other, the upper supporting surface is connected to the upper substrate, the lower supporting surface is connected to the first electrode, and the outer surfaces of the upper supporting surface and the lower supporting surface are both provided with the low-resistance layer. 3 . The dry etching equipment according to claim 1 , wherein the low-resistance layer comprises a polytetrafluoroethylene layer. 4 . The dry etching equipment according to claim 3 , wherein the polytetrafluoroethylene layer contains metal particles. 5 . The dry etching device according to claim 1 , wherein the supporting member comprises a conductive material for electrically connecting the upper substrate and the first electrode.