CN114695664A - Flexible optoelectronic device and manufacturing method - Google Patents

Abstract

The invention discloses a flexible optoelectronic device and a manufacturing method. The flexible optoelectronic device comprises: a first electrode, a functional layer and a second electrode, which are sequentially arranged on the light-transmitting insulating base along a set direction, and a third electrode; the first electrode is a transparent electrode, and the third electrode is connected to the transparent electrode. The first electrode is in electrical contact, the third electrode can be electrically connected to the first electrode or the second electrode of another flexible optoelectronic device through a conductive channel, the conductive channel includes more than one through-hole extending through the light-transmitting insulating base along a set direction. holes, and the through holes are filled with conductive substances. With the technical solution of the present invention, the series or parallel connection of multiple flexible optoelectronic devices can be simply and quickly realized by using conductive glue, etc., and the use of laser etching process is avoided, thereby reducing the device manufacturing cost and improving the device quality. In addition, by arranging a third electrode around the transparent electrode, the device performance can also be effectively improved.

Description

Flexible optoelectronic device and manufacturing method

technical field

The invention relates to an optoelectronic device, in particular to a flexible optoelectronic device and a manufacturing method.

Background technique

Flexible optoelectronic devices, such as flexible organic solar cells, have the advantages of lightness, low cost, and large-area fabrication, and have broad application prospects in various fields such as photovoltaic building integration and portable charging equipment. However, to realize practical application of flexible organic solar cells, the fabrication process of large-area thin-film cell modules must be developed. At present, the method to realize the thin film battery module is to use patterned preparation to connect the top electrode of the front junction cell with the bottom electrode of the back junction cell. This process needs to obtain a high geometric factor. The area control is very important, and it is very difficult in the actual preparation process. Generally speaking, a high geometry factor can be obtained by using the laser etching method. The disadvantage is that the manufacturing equipment is required to be high, especially the femtosecond laser equipment is required for the selective processing of the active layer, which is expensive.

SUMMARY OF THE INVENTION

The main purpose of the present invention is to provide a flexible optoelectronic device and a manufacturing method to overcome the deficiencies in the prior art.

In order to realize the foregoing invention purpose, the technical scheme adopted in the present invention includes:

An embodiment of the present invention provides a flexible optoelectronic device, comprising a first electrode, a functional layer and a second electrode sequentially arranged on a light-transmitting insulating substrate along a set direction, wherein the first electrode is a transparent electrode; further, The flexible optoelectronic device further includes a third electrode disposed on the light-transmitting insulating substrate, the third electrode is in electrical contact with the first electrode, and the third electrode can be connected to another flexible optoelectronic device through a conductive channel. The first electrode or the second electrode is electrically connected, and the conductive channel includes one or more through holes penetrating the light-transmitting insulating base along a set direction, and the through holes are filled with conductive substances.

In some embodiments, the third electrode is one or more, wherein the one or more third electrodes are distributed around the first electrode, and/or, at least a partial area of the one or more third electrodes is An electrode surrounds, and/or wherein at least partial areas of one or more third electrodes are covered by the first electrodes, and/or wherein at least partial areas of one or more third electrodes are superimposed on the first electrodes.

In some embodiments, the source of the conductive substance includes silver paste or conductive paste, but is not limited thereto.

The embodiment of the present invention also provides a method for manufacturing the flexible optoelectronic device, including the steps of sequentially manufacturing a first electrode, a functional layer, and a second electrode on the first surface of the light-transmitting insulating substrate; further, the manufacturing method Also includes:

A third electrode is arranged on the first surface of the light-transmitting insulating substrate, and the at least partial area is electrically contacted with the first electrode;

One or more through holes penetrating the light-transmitting insulating substrate in the thickness direction are processed and formed on the light-transmitting insulating substrate in the corresponding region of the third electrode, and are applied on the first side of the light-transmitting insulating substrate or the second side opposite to the first side. conductive paste, and filling part of the conductive paste into the through holes, so as to form a conductive channel in the light-transmitting insulating substrate, the conductive channel can connect the third electrode with the third electrode of the other flexible optoelectronic device An electrode or a second electrode is electrically connected.

In some embodiments, the manufacturing method specifically includes:

The through hole is processed on the light-transmitting insulating base in the region corresponding to the third electrode;

A conductive paste containing a first conductive material is applied on the second surface of the light-transmitting insulating substrate, and part of the conductive paste enters the through hole and reaches a set position, and the selected position is located in the through hole between the two ends;

A third electrode is formed on the first surface of the light-transmitting insulating base with a second conductive material, and a part of the second conductive material enters the through hole to form a second conductor, and the second conductor is connected to the through hole. The first conductor inside is electrically combined, and the first conductor is formed by the conductive paste entering the through hole, thereby forming a conductive channel in the light-transmitting insulating base.

In some embodiments, the manufacturing method further includes: contacting the conductive paste distributed on the second surface of the light-transmitting insulating substrate with the first electrode or the second electrode of another flexible optoelectronic device.

Compared with the prior art, with the technical solution of the embodiment of the present invention, the series or parallel connection of multiple flexible optoelectronic devices can be simply and quickly realized simply and quickly by using silver paste, conductive glue, etc., while avoiding the use of laser etching processes, etc. Therefore, the device fabrication cost is reduced and the device yield is improved. In addition, by arranging the third electrode around the transparent electrode, because the third electrode has more excellent conductivity, as the outer frame of the device, it can also effectively improve the charge collection efficiency. Improve device performance.

Description of drawings

In order to explain the technical solutions of the embodiments of the present invention more clearly, the following briefly introduces the accompanying drawings used in the embodiments. It should be understood that the following drawings only show some embodiments of the present invention, and therefore do not It should be regarded as a limitation of the scope, and for those of ordinary skill in the art, other related drawings can also be obtained according to these drawings without any creative effort.

1 is a schematic diagram of a manufacturing process of a flexible solar cell in Embodiment 1 of the present invention;

2 is a top view of a flexible solar cell in Embodiment 1 of the present invention;

3 is a schematic diagram of a manufacturing process of a flexible solar cell in Embodiment 2 of the present invention;

4 is an assembly schematic diagram of a flexible solar cell module in Embodiment 2 of the present invention;

5 is an assembly schematic diagram of another flexible solar cell module in Embodiment 2 of the present invention;

6 is a bottom view of a flexible solar cell in Embodiment 3 of the present invention;

7 is a schematic structural diagram of a flexible solar cell in Embodiment 4 of the present invention;

FIG. 8 is a schematic structural diagram of a flexible solar cell in Embodiment 5 of the present invention.

Detailed ways

It should be noted that the following detailed description is exemplary and intended to provide further explanation of the invention. Unless otherwise defined, all technical and scientific terms used in this specification have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.

It should be noted that the terminology used herein is for the purpose of describing specific embodiments only, and is not intended to limit the exemplary embodiments according to the present invention. As used herein, unless the context clearly dictates otherwise, the singular is intended to include the plural as well, furthermore, it is to be understood that when the terms "comprising" and/or "including" are used in this specification, it indicates that There are features, steps, operations, devices, components and/or combinations thereof.

An aspect of the embodiments of the present invention provides a flexible optoelectronic device comprising a first electrode, a functional layer and a second electrode sequentially arranged on a light-transmitting insulating substrate along a set direction, wherein the first electrode is a transparent electrode; further The flexible optoelectronic device further includes a third electrode disposed on the light-transmitting insulating substrate, the third electrode is in electrical contact with the first electrode, and the third electrode can communicate with another flexible optoelectronic device through a conductive channel. The first electrode or the second electrode of the device is electrically connected, the conductive channel includes one or more through holes penetrating the light-transmitting insulating base along a set direction, and the through holes are filled with conductive substances.

In some embodiments, the third electrode is one or more.

Further, one or more third electrodes are distributed around the first electrode.

Further, at least partial regions of the one or more third electrodes are surrounded by the first electrodes.

Further, at least partial regions of the one or more third electrodes are covered by the first electrodes.

Further, at least partial regions of one or more third electrodes are stacked on the first electrodes.

For example, the one or more third electrodes are disposed around the first electrode.

In some embodiments, the third electrode is a conductive line, and the third electrode surrounds or semi-surrounds the second electrode.

In some embodiments, the third electrode is in the shape of a frame as a whole, and at least an inner edge of the frame is in continuous electrical contact with the first electrode.

In some embodiments, the width of the conductive lines is ≤5mm, preferably ≤1mm.

In some embodiments, the protrusion height of the highest point of the third electrode is less than 5 μm, preferably less than 1 μm, compared to the first electrode.

In some embodiments, the equivalent sheet resistance of the conductive lines is ≤5Ω/sq, preferably ≤1Ω/sq.

In some embodiments, the through hole continuously penetrates the third electrode and the light-transmitting insulating substrate along a set direction.

In some embodiments, the source of the conductive substance includes silver paste or conductive paste, or can also be a suitable type of conductive ink known in the art, a fluid containing conductive substances, and the like.

In some embodiments, the transparent electrodes include, but are not limited to, silver nanowire electrodes, ITO, AZO, carbon nanotube films, graphene films, and the like.

In some embodiments, the light-transmitting insulating substrate may be made of organic, inorganic or organic/inorganic composite materials, for example, flexible materials such as polyester (PET), polyurethane (PU), polyimide (PI), etc. The transparent film can also be made of materials such as glass.

In some embodiments, the second electrode includes any one or a combination of metal electrodes, conductive polymer electrodes, and metal oxide electrodes, and is not limited thereto, for example, it may be made of Au, Ag, Cu Various types of metals with good electrical conductivity are formed.

In some embodiments, the flexible optoelectronic device includes a flexible thin film light emitting diode, a flexible thin film photovoltaic cell, a flexible thin film photodetector, etc., but is not limited thereto.

Taking a flexible solar cell as an example, its functional layer can be an active layer, and it can also include an electron transport layer, a hole transport layer, and an interface modification layer. Materials for these structural layers may be known in the art.

Another aspect of the embodiments of the present invention provides a method for manufacturing the flexible optoelectronic device, including the steps of sequentially manufacturing a first electrode, a functional layer, and a second electrode on the first surface of a light-transmitting insulating substrate; further, the The production method also includes:

A third electrode is arranged on the first surface of the light-transmitting insulating substrate, and at least a partial area of the third electrode is in electrical contact with the first electrode;

One or more through holes penetrating the light-transmitting insulating substrate in the thickness direction are processed and formed on the light-transmitting insulating substrate in the corresponding region of the third electrode, and are applied on the first side of the light-transmitting insulating substrate or the second side opposite to the first side. conductive paste, and filling part of the conductive paste into the through holes, so as to form a conductive channel in the light-transmitting insulating substrate, the conductive channel can connect the third electrode with the third electrode of the other flexible optoelectronic device An electrode or a second electrode is electrically connected.

Wherein, part of the conductive paste can be filled into the through holes by itself under the action of gravity, or other external forces can be used to fill the conductive paste into the through holes, but the former method is preferred.

In some embodiments, the manufacturing method specifically includes: disposing a third electrode on the first surface of the light-transmitting insulating substrate, and processing the third electrode and the insulating substrate to form a continuous penetrating third electrode and insulating substrate. the vias of the substrate, and the vias are completely filled with conductive paste.

In some embodiments, the manufacturing method specifically includes:

The through hole is processed on the light-transmitting insulating base in the region corresponding to the third electrode;

A conductive paste containing a first conductive material is applied on the second surface of the light-transmitting insulating substrate, and part of the conductive paste enters the through hole and reaches a set position, and the selected position is located in the through hole between the two ends of the through hole, wherein the conductive paste entering the through hole can form a first electrical conductor;

forming a third electrode on the first surface of the light-transmitting insulating base with a second conductive material, and allowing part of the second conductive material to enter the through hole to form a second conductor;

The second conductor is electrically combined with the first conductor to form the conductive channel in the light-transmitting insulating base.

In the above embodiment, by processing one or more through holes on the light-transmitting insulating substrate, and adjusting the properties such as the viscosity of the conductive paste, after being applied to the second surface of the light-transmitting insulating substrate, it can be Under the action of gravity (or other external forces), it enters the through hole by itself but does not leak out of the through hole. On the one hand, a conductor can be formed in the subsequent process and cooperate with the second conductive material entering the through hole. Forming a conductive channel penetrating the light-transmitting insulating substrate, on the other hand, it can avoid problems such as the exposure of the conductive paste from the through hole to contaminate the second surface of the light-transmitting insulating substrate, the process is simple, the controllability is good, the cost is low, and It is beneficial to improve device yield and ensure device performance.

The method of processing the through holes on the light-transmitting insulating substrate or the light-transmitting insulating substrate and the third electrode may be known, such as mechanical processing, laser ablation, or other physical and chemical methods. Wherein, if mechanical processing or laser ablation is adopted, in many cases, an annular protrusion may be formed on the edge of the processed through hole.

Further, the shape and size of the through hole can be arbitrarily selected according to actual requirements, for example, it can be a circle, a polygon or other irregular shapes.

In some embodiments, the area of the opening of the through hole on the first surface or the second surface of the light-transmitting insulating substrate is less than 0.13 mm ² , preferably less than 0.03 mm ² .

In some embodiments, the perimeter of the opening of the through hole on the first surface or the second surface of the light-transmitting insulating substrate is 10-800 μm, preferably 60-400 μm.

In some embodiments, the protrusion height of the edge of the opening of the through hole on the first surface or the second surface of the light-transmitting insulating substrate relative to the first surface or the second surface is less than 5 μm, preferably less than 1 μm.

In some embodiments, the manufacturing method further includes: contacting the conductive paste distributed on the second surface of the light-transmitting insulating substrate with the first electrode or the second electrode of another flexible optoelectronic device.

In some embodiments, the conductive paste includes silver paste, conductive paste, conductive ink of a suitable type known in the art, or other fluid containing conductive substances. Under certain circumstances (such as heating, natural drying or light irradiation), some of the volatile components (solvents, diluents, etc.) in these conductive pastes will be volatilized and removed, or a rapid cross-linking reaction will occur due to light irradiation. Thereby, the conductive paste is transformed into a conductive solid. Alternatively, some of the components in these conductive pastes may react with substances in the environment or other components in the conductive paste, thereby converting the conductive paste into a conductive solid.

In some embodiments, the viscosity of the conductive paste is 20-100,000 cP, preferably 100-10,000 cP.

In some embodiments, the method of applying the conductive paste on the surface of the insulating substrate or the third electrode includes any one or a combination of printing, coating or dispensing, but is not limited thereto.

In some embodiments, the method of forming the third electrode on the first surface of the insulating substrate with the second conductive material includes physical and/or chemical deposition, such as printing, coating, dispensing, vacuum evaporation or magnetron Any one or a combination of sputtering methods, but not limited thereto. For example, the third electrode can be formed by any one of inkjet printing, air jet printing, gravure printing, screen printing, flexographic printing, and mask spraying.

In some embodiments, the thickness of the third electrode is greater than the protrusion height of the edge of the opening of the through hole on the first surface of the insulating substrate relative to the second surface.

In some embodiments, the third electrode covers the opening of the through hole on the first surface of the insulating substrate and extends radially outward from the edge of the opening by more than 20 μm, preferably more than 50 μm.

In some embodiments, the material of the third electrode includes various metal or non-metal materials with good electrical conductivity, such as Au, Ag, and Cu.

In the above embodiments of the present invention, by forming a conductive channel and arranging a third electrode in the light-transmitting insulating substrate, the series or parallel connection of multiple flexible optoelectronic devices can be simply and quickly realized by using conductive glue, etc. Using a laser etching process, etc., reduces device fabrication costs and improves device yield.

In the above embodiments of the present invention, by arranging a third electrode with a lower resistance around the transparent electrode as a conductive path, using the "short-circuit effect" unique to the circuit itself, it is possible to change the conductivity of the transparent electrode itself under the premise of not changing. Large-area transparent electrodes provide low-cost, high-performance "circumferential high-speed", thereby effectively improving the overall performance of the product (including but not limited to charge collection efficiency, etc.), and the process is simple, low cost, wide adaptability, and has It is beneficial to the assembly process of optoelectronic device modules (such as solar cell modules).

The technical solutions of the present invention will be described in more detail below with reference to several embodiments and accompanying drawings. It should be pointed out that, unless otherwise specified, the raw materials, chemical reagents and equipment used in the following examples can be obtained through market purchases, and operations such as printing, spray coating, spin coating, and magnetron sputtering are all available. It can be implemented according to a manner known in the art.

Embodiment 1 A manufacturing method of a flexible solar cell, as shown in FIG. 1 , includes the following steps:

(1) A transparent silver nanowire electrode 102 (ie, the aforementioned first electrode) is fabricated on the front surface 1011 of the polyimide (PI) film 101 with a thickness of about 300 μm.

(2) A silver wire electrode 103 (ie, the aforementioned third electrode) is made on the front surface of the PI film 101 by screen printing or the like. The electrode 103 is in the shape of a conductive line, and is arranged around the silver nanowire electrode 102 and is connected with the silver nanowire electrode. 102 touch or overlap at the edges. The silver wire electrode 103 can be set in the form of a conductive line, and its width can be set to be ≤5mm, preferably ≤1mm, and the equivalent sheet resistance is ≤5Ω/sq, preferably ≤1Ω/sq. And, compared with the silver nanowire electrode 102, the protrusion height of the highest point of the silver wire electrode 103 is less than 5 micrometers, preferably less than 1 micrometer.

(3) A plurality of through holes 104 are processed on the silver wire electrode 103 by machining or laser ablation. Each through hole 104 may be circular, polygonal, or other irregular shapes. The perimeter range of a single through hole can be about 10-50 μm, and the opening area on the front side 1011 of the PI film or the opening area on the back side 1012 is less than 0.03 mm ² . Further, the protrusion heights of the edges of the openings of each through hole on the surface of the silver wire electrode 103 and the back side of the PI film can be controlled to be less than 1 μm.

(4) Invert the PI film 101, and apply a conductive adhesive (or conductive silver paste) 105 with a viscosity of 20-80 cP on the back side 1012 of the PI film where the aforementioned through holes are distributed, so that part of the conductive adhesive is filled under the action of gravity After the conductive glue is dried, a conductive channel can be formed through the PI film 101 .

(5) According to a method known in the art, an electron transport layer 106 (eg, a zinc oxide thin film layer with a thickness of about 50 nm) and an active layer 107 (eg, a PM ₆ : Y ₆ active layer with a thickness of about 50 nm) are sequentially fabricated on the silver nanowire electrode 102 about 100 nm), a hole transport layer 108 (such as a MOO ₃ film with a thickness of about 10 nm), and a metal top electrode 109 (ie, the aforementioned second electrode, such as metal Al, with a thickness of about 100 nm), thereby forming a flexible solar cell 110 . The top view of the flexible solar cell 110 is shown in FIG. 2 .

Embodiment 2 A manufacturing method of a flexible solar cell, as shown in FIG. 3 , includes the following steps:

(1) forming an ITO transparent conductive layer 202 (ie, the aforementioned first electrode) on the front surface 2011 of the polyester (PET) film 201 with a thickness of about 150 μm;

(2) A plurality of through holes 203 are processed on the PET film, each through hole vertically penetrates the PET film, and each through hole can be a circle, a polygon or other irregular shapes. The perimeter range of a single through hole is about 500-800 μm, the opening area on the front side of the PET film or the opening area on the back side is less than 0.13mm ² , and each through hole is at the edge of the opening of the front side 2011 and the back side 2012 of the PET film. The height of protrusions is less than 5μm;

(3) Ag electrodes 204 (ie, the aforementioned third electrodes) are formed by magnetron sputtering Ag on the front surface 2011 of the PET film where the through holes are distributed. The thickness of the Ag electrodes 204 is higher than the openings of the through holes on the front surface 2011 of the PET film The protrusion height of the edge, the deposition area of the Ag electrode 204 covers and exceeds the opening edge of each through hole on the front side of the PET film by more than 50 μm, wherein the local area of the Ag electrode 204 also enters each through hole to form a second conductor. The Ag electrodes 204 are in the shape of conductive strips, are arranged around the ITO transparent conductive layer 202 , and are in contact with or overlap with the ITO transparent conductive layer 202 at the edge. The Ag electrode 204 can be set in the form of a conductive line, and its width can be set to be ≤5mm, preferably ≤1mm, and the equivalent sheet resistance is ≤5Ω/sq, preferably ≤1Ω/sq. And, compared with the ITO transparent conductive layer 202, the protrusion height of the highest point of the Ag electrode 204 is less than 5 micrometers, preferably less than 1 micrometer.

(4) Invert the PET film 201, and apply conductive adhesive (or conductive silver paste) 205 with a viscosity of 80,000-100,000 cP on the back 2012 of the PET film where the aforementioned through holes are distributed, so that part of the conductive silver paste is under the action of gravity It enters each through hole by itself, but automatically stagnates at a certain distance from the front 2011 of the PET film, and dries into a solid due to the volatilization of the solvent, forming a first conductor, which is electrically combined with the second conductor to form a Conductive channels through the PET film.

(5) According to a method known in the art, on the ITO transparent conductive layer 202, an electron transport layer 206 (such as a zinc oxide thin film layer with a thickness of about 50 nm), an active layer 207 (such as a PM ₆ : Y ₆ active layer with a thickness of about 50 nm) and a about 100 nm), a hole transport layer 208 (eg, MoO ₃ film with a thickness of about 10 nm), and a metal top electrode 209 (ie, the aforementioned second electrode, eg, metal Al, with a thickness of about 100 nm), thereby forming a flexible solar cell 210 .

In this embodiment, the aforementioned step (4) may also be performed first, and then the step (3) may be performed.

The flexible solar cell 210 can be easily used as a battery unit to cooperate with other flexible solar cells to form a solar cell module, and additional operations such as laser ablation are not required.

For example, as shown in FIG. 4 , a flexible solar cell 210 can be electrically connected to the ITO transparent conductive layer of another flexible solar cell 210 ′ by applying conductive glue at the corresponding position of the backside of the flexible solar cell 210 , so that the Two solar cells are connected in parallel.

Alternatively, as shown in FIG. 5 , the back surface of a flexible solar cell 210 can also be electrically connected to the metal top electrode of another flexible solar cell 210 ′ by applying conductive glue at the corresponding position of the conductive channel, so that the Two solar cells are connected in series.

Embodiment 3 The manufacturing method of a flexible solar cell is basically the same as that of Embodiment 1, except that the third electrode is of grid type, and part of the grid is distributed in the first electrode. The bottom view of the flexible solar cell 310 is shown in FIG. 6 . 301 is a PI film, 302 is a first electrode, 303 is a third electrode, and 304 is a through hole.

Embodiment 4: The manufacturing method of a flexible solar cell is basically the same as that of Embodiment 1, with the difference that: referring to FIG. 7 , the third electrode 103 is stacked on the first electrode 102 .

Embodiment 5: The manufacturing method of a flexible solar cell is basically the same as that of Embodiment 1, with the difference that: referring to FIG. 8 , a partial area of the third electrode 103 is covered by the first electrode 102'.

It should be understood that the above-described embodiments are some, but not all, embodiments of the present invention. The detailed descriptions of the embodiments of the invention are not intended to limit the scope of the invention as claimed, but are merely representative of selected embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

Claims (11)

1. The utility model provides a flexible photoelectric device, includes and sets gradually first electrode, functional layer and the second electrode on the printing opacity insulating substrate along setting for the direction, wherein first electrode is transparent electrode, its characterized in that still including setting up third electrode on the printing opacity insulating substrate, third electrode and first electrode electrical contact, the third electrode can be connected with another flexible photoelectric device's first electrode or second electrode electricity through electrically conductive channel, electrically conductive channel includes and runs through along setting for the direction more than one through-hole of printing opacity insulating substrate, and the through-hole intussuseption is filled with conducting material.

2. The flexible optoelectronic device of claim 1, wherein: the third electrode is one or more, wherein the one or more third electrodes are distributed around the first electrode, and/or wherein at least a partial area of the one or more third electrodes is surrounded by the first electrode, and/or wherein at least a partial area of the one or more third electrodes is covered by the first electrode, and/or wherein at least a partial area of the one or more third electrodes is superimposed on the first electrode.

3. The flexible optoelectronic device of claim 1, wherein: the through hole continuously penetrates through the third electrode and the light-transmitting insulating substrate along a set direction.

4. The flexible optoelectronic device of claim 1, wherein: the source of the conductive substance comprises silver paste or conductive adhesive.

5. The flexible optoelectronic device of claim 1, wherein: the third electrode is a conductive line, and the third electrode surrounds or semi-surrounds the second electrode.

6. The flexible optoelectronic device of claim 5, wherein: the width of the conductive line is less than or equal to 5mm, preferably less than or equal to 1 mm; and/or the height of the protrusions of the highest point of the third electrode compared to the first electrode is less than 5 μm, preferably less than 1 μm; and/or the equivalent square resistance of the conductive line is less than or equal to 5 omega/sq, preferably less than or equal to 1 omega/sq.

7. The flexible optoelectronic device of claims 1-6, wherein: the flexible photoelectric device comprises a flexible thin film light emitting diode, a flexible thin film photovoltaic cell or a flexible thin film photodetector.

8. A method of fabricating a flexible optoelectronic device according to any one of claims 1 to 7, comprising the steps of sequentially fabricating a first electrode, a functional layer, and a second electrode on a first side of a light-transmissive insulating substrate; the manufacturing method is characterized by further comprising the following steps:

arranging a third electrode on the first surface of the light-transmitting insulating substrate, and enabling the third electrode to be in electrical contact with the first electrode;

processing and forming more than one through hole penetrating through the light-transmitting insulating substrate along the thickness direction in the corresponding area of the light-transmitting insulating substrate and the third electrode, applying conductive paste on the first surface or the second surface opposite to the first surface of the light-transmitting insulating substrate, and filling part of the conductive paste into the through hole, so that a conductive channel is formed in the light-transmitting insulating substrate, wherein the conductive channel can electrically connect the third electrode with the first electrode or the second electrode of another flexible photoelectric device.

9. The manufacturing method according to claim 8, characterized by specifically comprising: and arranging a third electrode on the first surface of the light-transmitting insulating base, and processing the third electrode and the insulating substrate so as to form the through hole which continuously penetrates through the third electrode and the insulating substrate, wherein the through hole is completely filled with the conductive slurry.

10. The manufacturing method according to claim 8, characterized by specifically comprising:

processing the through hole in the area corresponding to the third electrode on the light-transmitting insulating substrate;

applying a conductive paste comprising a first conductive material on a second side of the light-transmissive insulating substrate and allowing a portion of the conductive paste to enter the via and reach a set position, the selected position being between the two ends of the via, wherein the conductive paste entering the via is capable of forming a first electrical conductor;

forming a third electrode on the first surface of the light-transmitting insulating substrate by using a second conductive material, and enabling part of the second conductive material to enter the through hole to form a second conductor;

and electrically combining the second conductor with the first conductor to form the conductive channel in the light-transmitting insulating substrate.

11. The method of manufacturing according to claim 10, further comprising: and contacting the conductive paste distributed on the second surface of the light-transmitting insulating substrate with the first electrode or the second electrode of another flexible photoelectric device.

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