CN114739571B - Packaging device of MEMS pressure sensor - Google Patents
Packaging device of MEMS pressure sensor Download PDFInfo
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- CN114739571B CN114739571B CN202210424027.8A CN202210424027A CN114739571B CN 114739571 B CN114739571 B CN 114739571B CN 202210424027 A CN202210424027 A CN 202210424027A CN 114739571 B CN114739571 B CN 114739571B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 59
- 229910052751 metal Inorganic materials 0.000 claims abstract description 48
- 239000002184 metal Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000011521 glass Substances 0.000 claims abstract description 32
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000005476 soldering Methods 0.000 claims abstract description 6
- 238000005245 sintering Methods 0.000 claims abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 15
- 229920002545 silicone oil Polymers 0.000 abstract description 3
- 230000001681 protective effect Effects 0.000 abstract description 2
- 238000005259 measurement Methods 0.000 abstract 1
- 239000002002 slurry Substances 0.000 abstract 1
- 239000012528 membrane Substances 0.000 description 6
- 230000035882 stress Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004880 explosion Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- PNBPGDKNNUJQGC-UHFFFAOYSA-N [Si].[Si].O=[Si]=O Chemical compound [Si].[Si].O=[Si]=O PNBPGDKNNUJQGC-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/0065—Mechanical properties
- B81C1/00666—Treatments for controlling internal stress or strain in MEMS structures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/147—Details about the mounting of the sensor to support or covering means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
- G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
The invention discloses a packaging device of a MEMS pressure sensor chip. The device comprises a glass substrate, wherein a first through hole is formed in the glass substrate, the glass substrate is fixed with the side face of a MEMS sensor pressure chip through reflow soldering, the glass substrate is fixed with a base through silver powder glass sintering, a metal pin is arranged on the base, slurry is filled in the first through hole and the third through hole, and electric connection between an MEMS pressure sensor chip electrode and the metal pin is achieved through sintering. The leadless packaging mode provided by the invention has the advantages that the sensor chip does not need to be inverted, and the leadless packaging mode is particularly suitable for MEMS pressure sensor packaging with more complex structure; and the packaging structure is not filled with silicone oil and is provided with a protective cover, so that the reliability of the pressure sensor chip is improved, and the measurement accuracy and the frequency response range of the high-frequency dynamic signal of the pressure sensor are ensured.
Description
Technical Field
The invention relates to the technical field of sensor packaging, in particular to a leadless packaging structure and a leadless packaging method of an MEMS pressure sensor.
Background
The common packaging mode of the MEMS pressure sensor is lead packaging, the sensor chip is connected with the testing circuit through a metal lead, the metal lead is welded on a bonding pad of the sensor chip, and signals of the sensor are transmitted to a pin or the circuit through the bonding pad. In a traditional leadless packaging mode, a sensitive membrane layer is bonded with a substrate, a silicon island is away from the substrate, and when the sensitive membrane is deformed, the silicon island cannot play a role in overload resistance.
Disclosure of Invention
In order to overcome the defects or shortcomings in the prior art, the invention provides a packaging device of a MEMS pressure sensor chip.
Therefore, the packaging device provided by the invention comprises a substrate and a base, wherein the base is arranged on the bottom surface of the substrate, and a silver powder glass layer is arranged between the base and the base;
The top surface of the substrate is provided with a groove, the shape of the groove is matched with the shape of the MEMS pressure sensor chip during normal assembly, the MEMS pressure sensor chip is normal assembly in such a way that the bottom surface of the MEMS pressure sensor chip is positioned at the bottom of the groove, and the front surface of the MEMS pressure sensor chip is positioned at the top of the groove;
At least four first through holes are formed in the substrate, each first through hole penetrates through the top surface and the bottom surface of the substrate, and the at least four first through holes are distributed around the groove; each first through hole is filled with first conductive paste;
the top surface of the substrate is also provided with a first metal layer which is electrically connected with the conductive paste in each first through hole;
The silver powder glass layer is provided with second through holes communicated with the first through holes, bonding pads are arranged between the second through holes and the corresponding first through holes, and each bonding pad is electrically connected with the conductive paste in the corresponding first through hole;
The base is internally provided with third through holes communicated with the second through holes, and the third through holes penetrate through the top surface and the bottom surface of the base; and metal pins are arranged in the third through holes and are electrically connected with corresponding bonding pads, and the metal pins penetrate out of the corresponding third through holes.
Further, the second conductive paste is filled in each third through hole.
Further, the radial dimension of the second through hole is greater than the radial dimension of the corresponding first through hole and greater than the radial dimension of the corresponding third through hole.
Further, the cross section of the groove is in the shape of an inverted isosceles trapezoid.
Further, the packaging device comprises an outer shell, wherein a plurality of through holes are formed in the top surface of the shell, the packaging device is arranged in the shell, a cavity is reserved between the top surface of the substrate and the top surface of the shell, the through holes are located above the grooves, and the metal pins penetrate out of the shell.
Further, the housing includes an upper housing and a lower housing, and the upper housing and the lower housing are assembled by threads.
Further, a silicon cap is bonded to the front face of the MEMS pressure sensor chip, and the silicon cap and the front face of the MEMS pressure sensor chip form a cavity.
The invention also provides the MEMS pressure sensor based on the packaging device, which comprises the packaging device, wherein the MEMS pressure sensor chip is positively arranged in the groove of the packaging device, the MEMS pressure sensor chip is connected with the side wall of the groove through the second metal layer, and the output and input ends of the Wheatstone bridge of the MEMS pressure sensor are connected with the first metal layer through the metal lead.
Further, a silicon island is arranged on the bottom surface of the MEMS pressure sensor chip.
The invention also provides a packaging method of the packaging device, which comprises the following steps:
(1) Fixing the MEMS pressure sensor chip 4 in the groove 5-3 through reflow soldering;
(2) Adding conductive paste 5-2 into the first through hole 5-1, and then placing the base 2 and silver powder glass 6 on the bottom surface of the glass substrate 5 in a stacked manner, wherein the silver powder glass 6 is provided with a preset through hole of the second through hole 6-1; then, one end of the metal pin 3 is inserted into the third through hole 2-1 and is contacted with the metal pad 7;
(3) The sensor chip, the glass substrate 5, the silver powder glass 6, the base 2, the conductive paste 5-2 and the metal pins 3 are sintered together to form a sintered body.
According to the leadless packaging device adopted by the invention, the MEMS pressure sensor chip can be fixed in the substrate groove through a reflow soldering process, signals on the front surface of the sensor chip are connected to the metal pad on the back surface of the glass substrate through the substrate through hole and finally communicated with the metal pin, so that leadless signal transmission of the pressure sensor chip in normal installation is realized, compared with a Through Silicon (TSV) technology, the leadless packaging device is more efficient and lower in cost, the problem of lead fatigue under high-frequency vibration is avoided, signal noise caused by leads is improved, and reliable transmission of high-frequency signals is ensured.
The leadless packaging form provided by the invention has the advantages that the sensor chip does not need to be inverted, the structural design of the sensor chip is not limited, the leadless packaging form is particularly suitable for packaging MEMS pressure sensors with the front surface of the chip needing bonding glass or the back surface structure of the chip, and when the sensor chip is positively arranged on a substrate, the silicon island structure on the back surface can ensure that the sensor has overload resistance.
The packaging structure provided by the invention is free from silicone oil filling, and the protective cover with the air holes is arranged above the pressure sensor chip, so that the pressure sensor chip is further protected, and the measuring precision and the frequency response range of the pressure sensor to high-frequency dynamic signals are ensured.
Drawings
FIG. 1 is a schematic diagram of a packaging apparatus according to the present invention;
FIG. 2 is a schematic structural view of a substrate;
FIG. 3 is a pressure response of an embodiment sensor;
Fig. 4 is a schematic diagram of another structure of the packaging device of the present invention.
Detailed Description
Unless specifically stated otherwise, the terms or methods or processes herein are understood according to the knowledge of one of ordinary skill in the relevant art or are implemented using existing related methods.
The terms of direction or orientation of the top surface, the bottom surface and the like are consistent with the corresponding methods or orientations in the drawings of the specification, and it is to be understood that the specific direction or orientation in the drawings of the specification is an example of the present invention, and equivalent rotations, exchanges and the like performed by those skilled in the art within the scope of the present invention are within the scope of the present invention.
The MEMS sensor pressure chip disclosed by the prior art is adopted.
The invention is based on the leadless packaging concept of forward mounting (namely, the bottom of the MEMS sensor pressure chip is packaged in a substrate, the front surface provided with a Wheatstone bridge is positioned at the top outwards), so that the leadless packaging of the sensor chip can be realized in the forward mounting mode, and the forward mounting of the sensor chip does not cause any limitation on structural design. In a traditional leadless packaging mode based on flip chip, a sensitive membrane layer is bonded with a substrate, a silicon island is away from the substrate, and when the sensitive membrane is deformed, the silicon island cannot play a role in overload resistance. And because the silicon island orientation is the pressure orientation, complicated chip back structure is unfavorable for designing the apron that has specific frequency channel filtering capability. Therefore, the piezoresistive pressure sensor packaged in this manner has a weak survivability in a severe environment such as an explosion field. Based on the leadless packaging mode provided by the invention, the pressure sensor chip can be positively arranged on the substrate, and particularly, the sensor can have at least 3 times of overload resistance through the design of the silicon island. In addition, a cap with a filtering function can be bonded on the front surface of the chip, so that shock wave pressure signals near the resonance frequency of the sensitive diaphragm can be filtered, the sensitive diaphragm of the pressure sensor is further protected, and the environmental adaptability of the piezoresistive pressure sensor in severe environments such as an explosion field is improved.
The invention will now be described in further detail with reference to the drawings and examples, which are intended to illustrate the invention and not to limit the scope of the invention.
As shown in fig. 1, the leadless packaging structure of the MEMS pressure sensor of the present invention comprises a substrate 5 and a base 2, wherein the base 2 is arranged at the bottom of the substrate 5, and the substrate and the base are sintered and fixed by silver powder glass 6;
The top surface of the substrate is provided with a groove 5-3 for accommodating the MEMS pressure sensor, the shape of the groove is matched with that of the MEMS pressure sensor which is assembled or put forward, for example, the cross section of the groove is in the shape of an inverted isosceles trapezoid (namely, the top edge of the isosceles trapezoid is longer than the bottom edge); at least four first through holes 5-1 are formed in the base around the groove, each first through hole penetrates through the top surface and the bottom surface of the substrate, and each first through hole is filled with first conductive paste 5-2;
the top surface of the substrate is also provided with a first metal layer 4-1 which is electrically connected with the conductive paste 5-2 in each first through hole;
The silver powder glass layer is provided with second through holes 6-1 communicated with the first through holes, bonding pads 7 are arranged between the second through holes and the corresponding first through holes, and each bonding pad is electrically connected with the conductive paste in the corresponding first through hole;
A third through hole 2-1 communicated with each second through hole is arranged in the base, and each third through hole penetrates through the top surface and the bottom surface of the base; and each third through hole is internally provided with a metal pin 3, each metal pin is electrically connected with a corresponding bonding pad 7, and each metal pin penetrates out of the corresponding third through hole.
In a specific scheme, the number of the metal leads, the number of the first through holes, the number of the second through holes and the number of the third through holes are determined according to the number of the output ends and the input ends of the Wheatstone bridge on the MEMS pressure sensor chip. A common wheatstone bridge generally has two input ends, two output ends, and correspondingly, four first through holes, four second through holes and four third through holes are arranged in the packaging device.
When the packaging structure is adopted, the MEMS pressure sensor chip to be packaged is placed in the groove, and is connected with the side wall of the groove through the second metal layer 4-2, and the output and input ends of the Wheatstone bridge of the MEMS pressure sensor are connected with the first metal layer 4-1 through the metal lead 4-3.
The MEMS pressure sensor chip packaged by the packaging structure has the working principle that input voltage is applied to the input end of the Wheatstone bridge, and when a pressure signal acts on the sensor chip, a voltage signal which is generated by the output end of the Wheatstone bridge and is proportional to the pressure is output to a detection circuit through the metal lead 4-3, the first metal layer 4-1, the conductive paste 5-2, the metal bonding pad 7 and the metal pin 3.
Taking a CYG401 pressure sensor of a Kunshan double bridge as an example, after the package structure is adopted for packaging, a solid mechanical module in COMSOL finite element software is utilized for simulating the pressure response of the sensor of the embodiment. As a result, referring to fig. 3, in the case of the package structure of the present invention, when the applied pressure is 10MPa, the stress on the surface of the membrane is 355MPa, the cracking stress of the silicon material is not reached, and the measuring range of the sensor can reach 10MPa; for a leadless flip-chip packaged pressure sensor, when the applied pressure is 7MPa, the stress on the surface of the diaphragm is 466MPa, the rupture stress of the silicon material is exceeded, and the measuring range of the sensor is 5MPa. Therefore, the pressure sensor packaged by the packaging method effectively improves overload resistance and the measuring range.
On the basis of the scheme, the invention can further adopt the following improved or alternative characteristics.
In order to facilitate the operation of the packaging process, in some embodiments, each of the third through holes is filled with the second conductive paste 2-2.
In still other aspects, the radial dimension of the second through hole is greater than the radial dimension of the corresponding first through hole and greater than the radial dimension of the corresponding third through hole.
In a further scheme, the packaging structure device of the scheme is arranged in the shell, the top surface of the shell is provided with the through holes 1-4, the packaging device is arranged in the shell, a cavity is reserved between the top surface of the substrate and the top surface of the shell, the through holes are positioned above the groove, the metal pins penetrate out of the shell, certain solid particles can be blocked in the shell, the frequency components of a pressure signal to be tested can be prevented from being lost by reasonably designing the size parameters of the air holes, and the metal shell is filled with no silicone oil, so that the accuracy of the pressure sensor in high-frequency dynamic test is ensured. In a further proposal, the shell is formed by connecting and assembling an upper shell 1-2 and a lower shell 1-1 through threads 1-3.
The packaging method of the leadless packaging structure of the MEMS pressure sensor comprises the following steps: fixing the MEMS pressure sensor chip 4 on the inclined surface of the groove 5-3 of the glass substrate 5 through a reflow soldering process and forming a whole; adding a first conductive paste 5-2 into the first through hole 5-1, and then stacking the base 2 and silver powder glass) on the bottom surface of the glass substrate 5, wherein the silver powder glass 6 is provided with a preset through hole of the second through hole 6-1; then, one end of the metal pin 3 is inserted into the third through hole 2-1 and is contacted with the metal pad 7; the sensor chip, the glass substrate 5, the silver powder glass 6, the base 2, the conductive paste 5-2 and the metal pins 3 are sintered together to form a sintered body. Alternatively, the leadless package structure assembly of the MEMS pressure sensor may be completed by annealing treatment to eliminate residual stress in the material and stress introduced by the packaging process.
Further, the sinter can be fixed on the first metal shell 1-1; the second metal shell 1-2 is connected with the first metal shell 1-1 through a thread structure 1-3.
For the MEMS pressure sensor chip made of SOI silicon wafers, the three layers of SOI silicon wafers are respectively silicon-silicon dioxide-silicon, a Wheatstone bridge consisting of piezoresistors is designed on the silicon layer on the front surface of the SOI silicon wafer, and a sensitive membrane and a cavity are formed by deep silicon etching on the substrate silicon layer of the SOI silicon wafer. When the packaging structure is adopted, the inclined planes of the grooves 5-3 and the pressure sensor chip 4 which are fixed by reflow soldering can etch silicon through a wet etching process, the wet etching ensures that the two surfaces have the same inclined angle, and the process is rapid and has low cost. Other main process flows for preparing the MEMS pressure sensor chip also comprise doping, photoetching, ICP etching, scribing and the like.
In the leadless packaging structure of the MEMS pressure sensor, the substrate 5 can be made of a proper material such as glass, the material of the base 2 can be made of ceramics with the heat conductivity coefficient similar to that of the glass substrate, such as aluminum nitride ceramics, and the thermal stress generated between the substrate and the base caused by temperature can be reduced. Silver powder glass 6 is composed of silver, glass, an organic binder, a solvent and the like, and serves to bond pressure sensor chip 4 to base 2. The material of the metal pin 3 can be kovar alloy, and the kovar alloy has a relatively constant low or medium expansion coefficient which is close to that of a sealed material such as glass or ceramic, so that the effect of matching and sealing is achieved.
In still other embodiments, as shown in fig. 4, a silicon cap 4-5 is bonded to the front surface of the MEMS pressure sensor chip, where the silicon cap and the front surface of the MEMS pressure sensor chip form a cavity. In the case of a housing, the silicon cap 4-5 is located within the housing. The design of the silicon cap may be referred to as disclosed in CN 2021107989999.
Claims (10)
1. The packaging device of the MEMS pressure sensor chip is characterized by comprising a substrate (5) and a base (2), wherein the base is arranged on the bottom surface of the substrate, and a silver powder glass layer (6) is arranged between the base and the base;
The top surface of the substrate is provided with a groove (5-3), the shape of the groove is matched with the shape of the MEMS pressure sensor chip during normal assembly, the MEMS pressure sensor chip is normal assembly in such a way that the bottom surface of the MEMS pressure sensor chip is positioned at the bottom of the groove, and the front surface of the MEMS pressure sensor chip is positioned at the top of the groove;
At least four first through holes (5-1) are formed in the substrate, each first through hole penetrates through the top surface and the bottom surface of the substrate, and the at least four first through holes are distributed around the groove; each first through hole is filled with first conductive paste;
the top surface of the substrate is also provided with a first metal layer (4-1), and the first metal layer is electrically connected with the first conductive paste in each first through hole;
the silver powder glass layer is provided with second through holes (6-1) communicated with the first through holes, bonding pads (7) are arranged between the second through holes and the corresponding first through holes, and each bonding pad is electrically connected with the first conductive paste in the corresponding first through hole;
A third through hole (2-1) communicated with each second through hole is formed in the base, and each third through hole penetrates through the top surface and the bottom surface of the base; and metal pins (3) are arranged in the third through holes, each metal pin is electrically connected with a corresponding bonding pad (7), and each metal pin penetrates out of the corresponding third through hole.
2. The packaging device of a MEMS pressure sensor chip of claim 1, wherein each of the third vias is filled with a second conductive paste.
3. The packaging device of a MEMS pressure sensor chip of claim 1, wherein the radial dimension of the second through hole is greater than the radial dimension of the corresponding first through hole and greater than the radial dimension of the corresponding third through hole.
4. The packaging device of a MEMS pressure sensor chip of claim 1, wherein the cross-sectional shape of the recess is an inverted isosceles trapezoid.
5. The packaging device of a MEMS pressure sensor chip according to claim 1, wherein the packaging device is housed in an outer housing (1), wherein the top surface of the outer housing is provided with a plurality of through holes (1-4), wherein a cavity is left between the top surface of the substrate and the top surface of the outer housing, and wherein the plurality of through holes are located above the recess, and wherein the metal pins extend out of the outer housing.
6. The packaging device of the MEMS pressure sensor chip of claim 5, wherein the outer housing comprises an upper housing and a lower housing, and the upper housing and the lower housing are assembled by threads.
7. The packaging device of a MEMS pressure sensor chip according to claim 1, wherein a silicon cap (4-5) is bonded to the front side of the MEMS pressure sensor chip, the silicon cap and the front side of the MEMS pressure sensor chip forming a cavity.
8. A MEMS pressure sensor, comprising the packaging device of any one of claims 1-7, wherein a MEMS pressure sensor chip (4) is mounted in a groove of the packaging device, the MEMS pressure sensor chip is connected with a side wall of the groove through a second metal layer (4-2), and an output and an input end of a wheatstone bridge of the MEMS pressure sensor are connected with the first metal layer (4-1) through a metal lead (4-3).
9. The MEMS pressure sensor of claim 8, wherein a bottom surface of the MEMS pressure sensor chip is provided with silicon islands.
10. The packaging method of the MEMS pressure sensor chip is characterized by comprising the following steps of: packaging with the packaging device of the MEMS pressure sensor chip of claim 1, the method comprising the steps of:
(1) The MEMS pressure sensor chip (4) is fixed in the groove (5-3) through reflow soldering;
(2) Adding a first conductive paste (5-2) into the first through hole (5-1), and then stacking the base (2) and the silver powder glass layer (6) on the bottom surface of the base (5), wherein the silver powder glass layer (6) is provided with a preset through hole of the second through hole (6-1); then, one end of the metal pin (3) is inserted into the third through hole (2-1) and is contacted with the bonding pad (7);
(3) And sintering the sensor chip, the substrate (5), the silver powder glass layer (6), the base (2), the first conductive paste (5-2) and the metal pins (3) together to form a sinter.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210424027.8A CN114739571B (en) | 2022-04-21 | 2022-04-21 | Packaging device of MEMS pressure sensor |
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| CN202210424027.8A CN114739571B (en) | 2022-04-21 | 2022-04-21 | Packaging device of MEMS pressure sensor |
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| CN114739571B true CN114739571B (en) | 2024-09-17 |
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| CN116164781B (en) * | 2023-04-21 | 2023-07-07 | 西北工业大学 | A MEMS sensor based on optical fiber F-P cavity and its packaging method |
| CN116625559B (en) * | 2023-07-24 | 2023-10-13 | 昆山灵科传感技术有限公司 | Pressure sensor and pressure composite sensor |
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| CN111707404A (en) * | 2020-05-28 | 2020-09-25 | 西安交通大学 | A kind of high temperature resistant silicon carbide pressure sensor and preparation method thereof |
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| CN111707404A (en) * | 2020-05-28 | 2020-09-25 | 西安交通大学 | A kind of high temperature resistant silicon carbide pressure sensor and preparation method thereof |
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