CN114743917B - Semiconductor processing equipment - Google Patents
Semiconductor processing equipment Download PDFInfo
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- CN114743917B CN114743917B CN202210418067.1A CN202210418067A CN114743917B CN 114743917 B CN114743917 B CN 114743917B CN 202210418067 A CN202210418067 A CN 202210418067A CN 114743917 B CN114743917 B CN 114743917B
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- electrostatic chuck
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
本发明提供一种半导体工艺设备，包括工艺腔室和设置在工艺腔室中的静电卡盘，静电卡盘的承载面上设置有多个凸点，用于支撑晶圆；该设备还包括电荷消除装置和接地的取片部件；其中，电荷消除装置包括弹性导电部件，弹性导电部件在被放置于多个凸点上且在静电卡盘通电时，能够在静电力的作用下产生弹性形变，以与静电卡盘的承载面相接触，以转移承载面上的残余电荷；取片部件用于将弹性导电部件放置在多个凸点上，或将弹性导电部件由多个凸点上取走；取片部件接地设置。本发明提供的半导体工艺设备，能够快速消除静电卡盘承载面上的残余电荷，且不需要对工艺腔室进行开腔。
The present invention provides a semiconductor process equipment, including a process chamber and an electrostatic chuck arranged in the process chamber, wherein a plurality of bumps are arranged on the bearing surface of the electrostatic chuck for supporting a wafer; the equipment also includes a charge elimination device and a grounded wafer taking component; wherein the charge elimination device includes an elastic conductive component, which can produce elastic deformation under the action of electrostatic force when placed on the plurality of bumps and when the electrostatic chuck is energized, so as to contact the bearing surface of the electrostatic chuck to transfer the residual charge on the bearing surface; the wafer taking component is used to place the elastic conductive component on the plurality of bumps, or to take the elastic conductive component away from the plurality of bumps; the wafer taking component is grounded. The semiconductor process equipment provided by the present invention can quickly eliminate the residual charge on the bearing surface of the electrostatic chuck, and does not require opening the process chamber.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to semiconductor process equipment.
Background
In PVD (Physical Vapor Deposition ) processes, an electrostatic chuck is generally used to hold a wafer, and at the same time, the electrostatic chuck also has the function of heating the wafer to maintain the wafer at a predetermined process temperature until the process is completed. In order to improve the heat exchange efficiency between the electrostatic chuck and the wafer, it is necessary to introduce a gas between the electrostatic chuck and the wafer, and to maintain the gas at a predetermined pressure, thereby achieving heat exchange between the electrostatic chuck and the wafer. With the use of the electrostatic chuck, residual charges can be accumulated on the surface of the electrostatic chuck, but due to uncontrollable residual charges, the residual charges are often unevenly distributed on the electrostatic chuck, so that the adsorption force of the electrostatic chuck to a wafer is unevenly distributed, the stability of gas pressure between the electrostatic chuck and the wafer is further affected, and even the wafer is separated from the surface of the electrostatic chuck, so that the wafer is damaged and scrapped.
Conventional methods for eliminating residual charges on the surface of an electrostatic chuck generally include cooling the electrostatic chuck to room temperature, opening the chamber, and wiping the surface of the electrostatic chuck with a dust-free cloth having isopropyl alcohol (IPA) attached thereto to eliminate the residual charges on the surface of the electrostatic chuck. However, the PVD process generally requires about 200 to 400 ℃ for about 6 to 8 hours from the temperature reduction to room temperature, and a longer time is required to raise the temperature in the chamber to the process temperature again after the residual charge is eliminated. Therefore, a method for eliminating residual charges on the surface of the electrostatic chuck rapidly and efficiently is provided, which is a problem to be solved in the field of semiconductor technology.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides a semiconductor process device which can quickly eliminate residual charges on a bearing surface of an electrostatic chuck and does not need to open a cavity of a process chamber.
The invention provides semiconductor process equipment, which comprises a process chamber, an electrostatic chuck arranged in the process chamber, a charge eliminating device and a piece taking part, wherein a plurality of protruding points are arranged on a bearing surface of the electrostatic chuck and used for supporting a wafer,
The charge eliminating device comprises an elastic conductive component which can generate elastic deformation under the action of electrostatic force when being placed on a plurality of protruding points and the electrostatic chuck is electrified so as to be in contact with a bearing surface of the electrostatic chuck, so as to transfer residual charges on the bearing surface;
The sheet taking component is used for placing the elastic conductive component on the bumps or taking the elastic conductive component away from the bumps, and is grounded.
Optionally, the elastic conductive component includes an elastic membrane, the elastic membrane is capable of being elastically deformed, and the elastic deformation of the elastic membrane satisfies that the elastic membrane can be contacted with the bearing surface.
Optionally, the charge eliminating device further includes a substrate, and the substrate is overlapped with the elastic membrane.
Optionally, the charge eliminating device further includes a connection ring, the connection ring is disposed on a surface of the substrate facing the elastic membrane, the substrate is connected with the elastic membrane through the connection ring, and two surfaces of the elastic membrane opposite to the substrate and an inner peripheral surface of the connection ring can enclose a cavity.
Optionally, the connection ring and the elastic membrane are connected by diffusion welding or brazing.
Optionally, the connection ring and the substrate are integrally formed.
Optionally, the sheet taking component includes a manipulator, where the manipulator is used to transfer the elastic conductive component into the process chamber and place the elastic conductive component on a plurality of bumps of the electrostatic chuck, or remove the elastic conductive component from the electrostatic chuck and transfer the elastic conductive component to the outside of the process chamber, and the manipulator is grounded.
The sheet taking component comprises a plurality of ejector pins, wherein the ejector pins penetrate through the electrostatic chuck and do lifting motion, each ejector pin is used for lifting the elastic conductive component from the electrostatic chuck or conducting descending motion to transfer the elastic conductive component to the salient points of the electrostatic chuck, and the ejector pins are grounded.
Optionally, the elastic conductive component is made of stainless steel, aluminum or titanium.
Optionally, the elastic conductive element has the same size and weight as the wafer.
The invention has the following beneficial effects:
The invention provides semiconductor process equipment, which comprises a charge eliminating device and a grounded sheet taking part, wherein the charge eliminating device is used for eliminating residual charges on an electrostatic chuck, the charge eliminating device specifically comprises an elastic conductive part, the elastic conductive part can be adsorbed on a bearing surface of the electrostatic chuck under the action of electrostatic force, and when the elastic conductive part is adsorbed on the bearing surface, the elastic conductive part can generate elastic deformation so as to be fully contacted with convex points in the bearing surface and non-convex point areas except the convex points, so that the residual charges remained on the surface of the electrostatic chuck are completely transferred into the elastic conductive part by utilizing the conductivity of the elastic conductive part and are led into a ground wire through the sheet taking part, and the elastic conductive part can be placed on a plurality of convex points and taken away from the convex points, so that the residual charges of the electrostatic chuck can be eliminated without opening a cavity, and the time for eliminating the residual charges on the surface of the electrostatic chuck is greatly shortened.
Drawings
FIG. 1 is a schematic view of a partial structure of a semiconductor processing apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of the charge distribution of an electrostatic chuck when the wafer is attracted;
FIG. 3 is a simplified charge distribution diagram of an electrostatic chuck as it attracts a wafer after accumulating residual charge;
FIG. 4 is a schematic diagram of the charge distribution as the electrostatic chuck attracts the elastic conductive element after accumulation of residual charge;
FIG. 5 is a schematic diagram of the charge distribution of the elastic conductive element after desorption;
fig. 6 is a schematic structural diagram of an elastic conductive component according to an embodiment of the present invention;
FIG. 7 is an enlarged view of a portion of area A of FIG. 6;
fig. 8 is a schematic diagram of a semiconductor processing apparatus according to an embodiment of the present invention.
Detailed Description
In order to enable those skilled in the art to better understand the technical scheme of the present invention, the following describes the semiconductor process equipment provided by the present invention in detail with reference to the accompanying drawings.
The embodiment provides semiconductor process equipment, which comprises a process chamber and an electrostatic chuck arranged in the process chamber, wherein a bearing surface of the electrostatic chuck is provided with a plurality of protruding points for supporting a wafer, and because the material of the wafer is generally high in strength and not easy to bend, when the wafer is adsorbed on the bearing surface, the wafer only receives supporting force from the protruding points and is not contacted with non-protruding point areas in the bearing surface, so that the influence of micro particles on the wafer is reduced by reducing the contact area with the bearing surface.
Referring to fig. 1, the semiconductor processing apparatus according to the present embodiment further includes a charge eliminating device for eliminating charges remaining on the surface of the electrostatic chuck 1, and specifically includes an elastic conductive member 2, and a grounded pick-up member (not shown) for placing the elastic conductive member 2 on the plurality of bumps 11 and removing the elastic conductive member 2 from the plurality of bumps 11.
When the elastic conductive member 2 is placed on the plurality of bumps 11 of the carrying surface of the electrostatic chuck 1 and the electrostatic chuck 1 is energized, the elastic conductive member 2 is attracted to the carrying surface. Since the elastic conductive member 2 has a certain elasticity, it is elastically deformed by the electrostatic force to be able to contact with each bump 11 on the bearing surface and the non-bump area other than the bump 11. During the process of contacting the elastic conductive element 2 with the bearing surface, since the elastic conductive element 2 has conductivity, residual charges remaining on the surface of the electrostatic chuck 1 are rapidly transferred into the elastic conductive element 2.
When the electrostatic chuck 1 is powered off and the elastic conductive component 2 is taken away from the plurality of protruding points 11 on the bearing surface, the grounded sheet taking device is contacted with the elastic conductive component 2, all charges in the elastic conductive component 2 can be quickly led into the ground wire through the sheet taking device, so that residual charges on the bearing surface of the electrostatic chuck 1 can be quickly eliminated, and the time for eliminating the residual charges of the electrostatic chuck is greatly shortened. In addition, the elastic conductive component 2 can be placed into the process chamber and taken out from the process chamber by the sheet taking component, so that the process chamber does not need to be opened in the process of eliminating the residual charges, the duration of the residual charges of the electrostatic chuck 1 is further shortened, and the difficulty of eliminating the residual charges is reduced.
Referring to fig. 2-5, the basic principles of the processes of the electrostatic chuck for adsorbing a wafer, the electrostatic chuck for accumulating residual charges, and the elastic conductive member for eliminating residual charges will be described in detail below based on the above-mentioned semiconductor processing apparatus according to the present embodiment.
Taking the double-electrode type electrostatic chuck 1 as an example, the electrostatic chuck 1 comprises a chuck body and two electrostatic electrodes 12 arranged in the chuck body, wherein the chuck body is made of an insulating material, and the two electrostatic electrodes 12 in the electrostatic chuck 1 are connected with an external high-voltage direct current power supply. When a dc voltage is applied to the electrostatic electrodes 12 in the chuck body by the dc power supply, as shown in fig. 2, positive charges and negative charges are respectively generated on the two electrostatic electrodes 12, and when the wafer 3 is placed on the bumps 11 in the carrying surface of the electrostatic chuck 1, according to the principle of electrostatic induction, corresponding positive induction charges and negative induction charges are induced on the wafer 3 at positions corresponding to the electrostatic electrodes 12, so that an electrostatic force that attracts each other is generated between the positive charges and the negative charges on the surface of the electrostatic electrode 12 and the negative charges on the surface of the wafer 3, thereby making the wafer 3 be adsorbed on the carrying surface of the electrostatic chuck 1.
As shown in fig. 3, a certain amount of residual charge e is accumulated on the load-bearing surface of the electrostatic chuck 1 after a certain period of plasma process in the process chamber. Under the condition that the direct-current voltage applied to the electrostatic electrode 12 by the high-voltage direct-current power supply is unchanged, when residual charges e do not exist on the bearing surface of the electrostatic chuck 1, the quantity of negative induced charges on the wafer 3 is equal to the quantity of positive charges on the electrostatic electrode 12, and the quantity of positive induced charges on the wafer 3 is equal to the quantity of negative charges on the electrostatic electrode 12; when the residual charge e exists on the carrying surface of the electrostatic chuck 1, the quantity of positive charges and negative charges on the electrostatic electrode 12 is unchanged, but the induced charges generated on the wafer 3 are affected by the residual charge e, the quantity of the induced charges generated on the wafer 3 plus the quantity of the residual charges e is equal to the quantity of charges on the electrostatic electrode 12, and compared with the situation that the residual charges e do not exist on the carrying surface, the quantity of the induced charges on the wafer 3 is reduced, specifically, as shown in fig. 3, taking the situation that the residual charges e are negative charges as an example, the position on the wafer 3 corresponding to the residual charges e does not generate negative induced charges, and then the electrostatic force which is attracted mutually is not generated between the position on the wafer 3 corresponding to the residual charges e and the electrostatic electrode 12, or the position on the wafer 3 corresponding to the residual charges e generates positive induced charges, and then generates stronger mutual attracted electrostatic force between the position on the wafer 3 and the electrostatic electrode 12, and as shown in fig. 3, the residual charges e on the carrying surface tend to be unevenly distributed, and the overall adsorption force of the wafer 3 by the electrostatic chuck 1 is unevenly distributed, and then the electrostatic chuck 1 can seriously affect the wafer 3 when the wafer is ventilated, and the wafer is seriously and the wafer is ventilated, and the result is seriously influenced.
In order to eliminate the residual charges e, the elastic conductive element 2 proposed in this embodiment may be placed on the bearing surface of the electrostatic chuck 1, and a dc voltage is applied to the electrostatic electrode 12 by turning on a high-voltage dc power supply, as shown in fig. 4, the lower surface of the elastic conductive element 2 generates an induced charge, and generates an electrostatic adsorption force with the electrostatic electrode 12 to adsorb the elastic conductive element 2 on the bearing surface, and under the action of the electrostatic force and the supporting force of the bumps 11, the elastic conductive element 2 capable of being elastically deformed can contact with each bump 11 on the bearing surface and the non-bump area except for the bump 11. Since the chuck body is made of an insulating material and the elastic conductive member 2 has good conductivity, the residual charge e on the surface of the electrostatic chuck 1 is rapidly transferred to the elastic conductive member 2. In addition, as shown in fig. 5, after the power supply of the electrostatic chuck 1 is turned off, the adsorption force between the elastic conductive member 2 and the electrostatic chuck 1 is lost, so that the elastic conductive member 2 is restored, and the residual charge e is always remained on the elastic conductive member 2, and then, when the grounded pick-up member is contacted with the elastic conductive member 2, the residual charge e on the elastic conductive member 2 is rapidly introduced into the ground wire, thereby completing the elimination of the residual charge e.
In some embodiments, the weight and the size of the elastic conductive component 2 may be designed to be the same as those of the wafer 3, so that not only the adsorption stability of the elastic conductive component 2 can be ensured, but also the wafer taking component originally used for taking and placing the wafer can be reused, and the preset technological parameters such as the output power of the electrostatic chuck, the grabbing force of the wafer taking component, and the air flow in the chamber are not required to be modified.
In some embodiments, as shown in fig. 6, the elastic conductive component 2 includes an elastic membrane 21, where the elastic membrane 21 can be elastically deformed, and the elastic deformation of the elastic membrane 21 is sufficient to contact the bearing surface and to be able to adhere to each bump 11 and the non-bump area on the bearing surface. However, in other embodiments, if the load bearing surface of the electrostatic chuck 1 is planar, a conductive member having a planar surface may be used to make full contact with the load bearing surface, and thus, a non-elastic membrane may be used in place of the elastic conductive member 2, such as a graphite sheet.
In some embodiments, in order to avoid that the single elastic membrane 21 is blown up by the air flow in the process chamber due to its lighter weight, as shown in fig. 6, the charge eliminating device further includes a substrate 22, where the substrate 22 is overlapped with the elastic conductive component 2, and the opposite surfaces are connected, so that the elastic membrane 21 is ensured to be stably adsorbed on the bearing surface during the process of eliminating the residual charges, and is not easy to be blown up by the air flow.
In some embodiments, as shown in fig. 7, the charge eliminating device further includes a connection ring 23, the connection ring 23 is disposed on a surface of the substrate 22 facing the elastic membrane 21, the substrate 22 and the elastic conductive member 2 are connected by the connection ring 23, and two opposite surfaces of the elastic membrane 21 and the substrate 22 and an inner peripheral surface of the connection ring 23 can enclose a cavity. Specifically, the cavity formed between the elastic membrane 21 and the substrate 22 is beneficial to deformation of the elastic membrane 21, the elastic membrane 21 can only suspend to be elastic, otherwise, the elastic membrane 21 is tightly attached to the substrate 22 to limit the elastic deformation thereof, as shown in fig. 4, when the elastic membrane 21 is adsorbed on the bearing surface, under the action of electrostatic force and supporting force of the convex point 11, a part of the area of the elastic membrane 21 protrudes towards the direction of the substrate 22, and a part of the area protrudes towards the surface of the electrostatic chuck, and the cavity can accommodate the deformation amount of the elastic membrane 21 protruding towards the direction of the substrate 22, so that the deformation of the elastic membrane 21 can be ensured to be in full contact with each convex point 11 on the bearing surface and non-convex point areas except the convex point 11. Preferably, the cavity is completely sealed, and when the elastic membrane 21 deforms due to adsorption on the bearing surface, the cavity can accommodate the deformation amount of the elastic membrane, so that the reuse of the elastic membrane 21 is realized.
In some embodiments, the elastic membrane 21 is made of stainless steel, aluminum, titanium or other metal with good elasticity, so that the elastic membrane 21 can be ensured to be quickly restored after desorption, and the recycling of the elastic membrane 21 is realized. Moreover, the material has good heat resistance and can adapt to the high-temperature environment in the process chamber, so that the residual charges can be eliminated without cooling the process chamber or the electrostatic chuck, the time for eliminating the residual charges is greatly shortened, and the process efficiency of the chamber is improved. The materials of the base plate and the elastic membrane can be the same or different, and the combination process of the visual base and the elastic membrane can be selected. In addition, the deformation of the elastic diaphragm is determined according to the bump height of the electrostatic chuck, so that the elastic deformation of the elastic diaphragm is ensured to be larger than the bump height of the electrostatic chuck, and the deformed elastic diaphragm can be contacted with the surface of the electrostatic chuck.
When the elastic membrane 21 deforms due to the adsorption on the bearing surface, the deformation of the elastic membrane 21 is often located in the middle area of the membrane, and the edge area of the elastic membrane 21 generates tensile stress due to the deformation of the middle area, so that the joint between the elastic membrane 21 and the connecting ring 23 is subjected to the same-direction tensile force, and in order to avoid the separation of the elastic membrane 21 and the connecting ring 23 due to the tensile force, the elastic membrane 21 and the connecting ring 23 are connected by adopting a mode with a strong connecting force. In some embodiments, the connection ring 23 and the elastic membrane 21 are connected by diffusion welding or brazing. Specifically, diffusion welding refers to that two materials to be welded are contacted with each other under the action of higher temperature and pressure so that the two materials are subjected to local plastic deformation and inter-diffusion among atoms at the deformation part to finally form a mutually-blended diffusion layer, brazing refers to that brazing filler metal and a piece to be welded are heated to the melting temperature of the brazing filler metal at the same time, gaps of solid workpieces are filled with liquid brazing filler metal, and finally the two pieces to be welded are tightly adhered by the brazing filler metal, and the two welding modes are strong in connecting force and are not easy to separate.
In some embodiments, the connection ring 23 is integrally formed with the base plate 22, and specifically, the connection ring 23 and the base plate 22 may be manufactured by stamping or the like in actual production to ensure connection stability between the connection ring 23 and the base plate 22.
In some embodiments, the pick-up means comprises a robot for transferring the elastic conductive means 2 into the process chamber and onto the plurality of bumps 11 of the electrostatic chuck 1, or removing the elastic conductive means 2 from the electrostatic chuck 1 and transferring it to the outside of the process chamber, and the robot is grounded.
In some embodiments, the sheet taking part comprises a plurality of ejector pins which are arranged through the electrostatic chuck 1 and perform lifting movement, each ejector pin is used for performing lifting movement to jack the elastic conductive part from the electrostatic chuck 1 or performing descending movement to transfer the elastic conductive part 2 to a plurality of protruding points 11 of the electrostatic chuck 1, and the plurality of ejector pins are grounded.
In some preferred embodiments, the tablet handling member comprises a robot and a plurality of pins that are capable of cooperating to complete the tablet transfer. Specifically, taking the mechanical arm and the ejector pins as shown in fig. 8 as an example, when the ejector pins 5 are lifted, the mechanical arm 4 is used for supporting the elastic conductive component 2 to extend from the sheet conveying port and descend above the electrostatic chuck 1 until the elastic conductive component 2 falls on the end parts of the ejector pins 5, then the empty mechanical arm 4 moves out from the sheet conveying port, the ejector pins 5 move downwards until the elastic conductive component 2 falls on the bearing surface, after the charge is eliminated, the ejector pins 5 move upwards to lift the elastic conductive component 2 from the bearing surface, meanwhile, the charge on the elastic conductive component 2 is led into the ground wire through the grounded ejector pins 5, and the empty mechanical arm 4 extends from the sheet conveying port and moves below the elastic conductive component 2 to support the elastic conductive component 2 and support the elastic conductive component 2 to move out from the sheet conveying port. The manipulator 4 and the thimble 5 are not only used for supporting the elastic conductive component 2, but also used for supporting the wafer 3 in the semiconductor process, that is, the elastic conductive component 2 does not need to be additionally provided with a special chip taking component in a traditional process chamber, so that the transformation cost of process equipment is reduced.
As another technical solution, based on the above semiconductor process apparatus, the present embodiment further provides a method for removing residual charges of an electrostatic chuck, which specifically includes:
step S1, placing an elastic conductive component on a bearing surface of an electrostatic chuck;
Step S2, electrifying an electrostatic electrode in the electrostatic chuck to adsorb the elastic conductive component on the bearing surface;
and S3, powering off the electrostatic electrode in the electrostatic chuck, and removing the elastic conductive part from the bearing surface.
In some embodiments, before performing step S1, the method further includes:
Judging whether the working time of the electrostatic chuck reaches the preset maintenance time, if so, carrying out the step of placing the elastic conductive component on the bearing surface of the electrostatic chuck, and if not, continuing to judge.
Specifically, the preset maintenance time is a time for accumulating the residual charges of the specified quantity on the carrying surface of the electrostatic chuck, which can be obtained through multiple tests, and the residual charges of the specified quantity can be set according to actual process requirements.
The charge eliminating device comprises an elastic conductive part, wherein the elastic conductive part can be adsorbed on a bearing surface of the electrostatic chuck under the action of electrostatic force, and can generate elastic deformation when being adsorbed on the bearing surface, so that the elastic conductive part can be fully contacted with the salient points in the bearing surface and non-salient point areas except the salient points, the residual charge remained on the surface of the electrostatic chuck is completely transferred into the elastic conductive part by utilizing the conductivity of the elastic conductive part, and is led into a ground wire through the tablet taking part.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present invention, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the invention, and are also considered to be within the scope of the invention.
Claims (10)
1. The semiconductor process equipment comprises a process chamber and an electrostatic chuck arranged in the process chamber, wherein a bearing surface of the electrostatic chuck is provided with a plurality of protruding points for supporting a wafer, the semiconductor process equipment is characterized by also comprising a charge eliminating device and a wafer taking component,
The charge eliminating device comprises an elastic conductive component which can generate elastic deformation under the action of electrostatic force when being placed on a plurality of protruding points and the electrostatic chuck is electrified so as to be in contact with a bearing surface of the electrostatic chuck, so as to transfer residual charges on the bearing surface;
The sheet taking component is used for placing the elastic conductive component on the bumps or taking the elastic conductive component away from the bumps, and is grounded.
2. The semiconductor processing apparatus of claim 1, wherein the elastic conductive member comprises an elastic membrane, the elastic membrane is capable of elastic deformation, and the elastic membrane is elastically deformed by an amount sufficient to contact the load bearing surface.
3. The semiconductor processing apparatus of claim 2, wherein the charge eliminating device further comprises a substrate, the substrate being stacked with the elastic membrane.
4. The semiconductor processing apparatus according to claim 3, wherein the charge eliminating device further comprises a connection ring provided on a surface of the substrate facing the elastic membrane, the substrate and the elastic membrane are connected by the connection ring, and two surfaces of the elastic membrane opposite to the substrate and an inner peripheral surface of the connection ring can enclose a cavity.
5. The semiconductor processing apparatus of claim 4, wherein the connection ring and the elastic membrane are connected by diffusion welding or brazing.
6. The semiconductor processing apparatus of claim 4, wherein the connection ring is integrally formed with the substrate.
7. The semiconductor processing apparatus of claim 1, wherein the pick-up assembly comprises a robot for transferring the elastic conductive assembly into the process chamber and onto a plurality of the bumps of the electrostatic chuck, or removing the elastic conductive assembly from the electrostatic chuck and transferring it outside the process chamber, and wherein the robot is grounded.
8. The semiconductor processing apparatus of claim 1, wherein the pick-up member comprises a plurality of pins disposed through the electrostatic chuck and configured to perform a lifting motion, each of the pins configured to perform a lifting motion to lift the elastic conductive member from the electrostatic chuck or a lowering motion to transfer the elastic conductive member to a plurality of the bumps of the electrostatic chuck;
The ejector pins are grounded.
9. The semiconductor processing apparatus of claim 1 wherein the resilient conductive member is stainless steel, aluminum or titanium.
10. The semiconductor processing apparatus of claim 1, wherein the elastic conductive feature has a size and weight that is the same as a size and weight of a wafer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210418067.1A CN114743917B (en) | 2022-04-20 | 2022-04-20 | Semiconductor processing equipment |
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| CN202210418067.1A CN114743917B (en) | 2022-04-20 | 2022-04-20 | Semiconductor processing equipment |
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| CN114743917A CN114743917A (en) | 2022-07-12 |
| CN114743917B true CN114743917B (en) | 2025-05-23 |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003063234A1 (en) * | 2002-01-23 | 2003-07-31 | Tokyo Electron Limited | Static eliminating mechanism for table, and tester |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3254467B2 (en) * | 1992-10-21 | 2002-02-04 | 日本電信電話株式会社 | Wafer holding mechanism |
| US5812357A (en) * | 1996-10-11 | 1998-09-22 | Polaroid Corporation | Electrostatic discharge protection device |
| JPH11145265A (en) * | 1997-11-11 | 1999-05-28 | Nissin Electric Co Ltd | Electrostatic chuck |
| CN100381883C (en) * | 2004-05-24 | 2008-04-16 | 统宝光电股份有限公司 | Static electricity eliminating device and machine table thereof |
| KR20090057809A (en) * | 2007-12-03 | 2009-06-08 | 주식회사 에이디피엔지니어링 | Board Bonding Device |
| CN110581099B (en) * | 2018-06-07 | 2022-06-14 | 北京北方华创微电子装备有限公司 | Electrostatic chuck and process chamber |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003063234A1 (en) * | 2002-01-23 | 2003-07-31 | Tokyo Electron Limited | Static eliminating mechanism for table, and tester |
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