CN114784061B - Display panel and method for manufacturing the same - Google Patents
Display panel and method for manufacturing the same Download PDFInfo
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- CN114784061B CN114784061B CN202210350768.6A CN202210350768A CN114784061B CN 114784061 B CN114784061 B CN 114784061B CN 202210350768 A CN202210350768 A CN 202210350768A CN 114784061 B CN114784061 B CN 114784061B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
本申请公开了一种显示面板及其制备方法。本申请提供的显示面板包括：一基板，所述基板包括显示区以及与所述显示区相邻的GOA区；一阵列层，所述阵列层设于所述基板上；一第一封装层，所述第一封装层设于所述阵列层远离所述基板的一侧，且所述第一封装层位于所述GOA区上；一第二封装层，所述第二封装层设于所述阵列层远离所述基板的一侧，且所述第二封装层位于所述显示区上；其中，所述第一封装层的单位面积含氢量小于所述第二封装层的单位面积含氢量。本申请可以有效解决显示面板内部存在的氢扩散问题，对显示面板进行保护，延长显示面板的使用寿命。
The present application discloses a display panel and a method for preparing the same. The display panel provided in the present application includes: a substrate, the substrate including a display area and a GOA area adjacent to the display area; an array layer, the array layer is arranged on the substrate; a first encapsulation layer, the first encapsulation layer is arranged on a side of the array layer away from the substrate, and the first encapsulation layer is located on the GOA area; a second encapsulation layer, the second encapsulation layer is arranged on a side of the array layer away from the substrate, and the second encapsulation layer is located on the display area; wherein the hydrogen content per unit area of the first encapsulation layer is less than the hydrogen content per unit area of the second encapsulation layer. The present application can effectively solve the hydrogen diffusion problem existing inside the display panel, protect the display panel, and extend the service life of the display panel.
Description
Technical Field
The application relates to the field of display devices, in particular to a display panel and a preparation method thereof.
Background
An Organic Light-Emitting Diode (OLED) is a self-luminous device that emits Light under current driving. The OLED display panel has the advantages of wide color gamut, wide viewing angle, low power consumption, high resolution, suitability for flexible panels and the like, and can be widely applied to intelligent household appliances, wearable equipment and other equipment.
However, the display device in the OLED display panel is susceptible to external influences, such as oxygen, water, etc. in the air, which may cause corrosion to the display device, thereby shortening the service life of the display panel. Therefore, it is generally required to isolate the display device from oxygen, water, etc. in the air through a thin film encapsulation process to extend the service life of the display panel.
However, some encapsulation films have hydrogen diffusion phenomena at high temperatures or during aging. Because the display area of the display panel is covered by the anode layer and the cathode layer, the influence of hydrogen diffusion on the thin film transistor of the display area array layer is small. And outside the display area, the thin film transistor of the array layer is negatively biased due to hydrogen diffusion without shielding of the anode layer and the cathode layer. And severe hydrogen diffusion can cause Array substrate row driver (GOA) circuitry of the Array layer to fail.
Disclosure of Invention
The application provides a display panel and a preparation method thereof, which can effectively solve the problem of hydrogen diffusion in the display panel, protect the display panel and prolong the service life of the display panel.
In a first aspect, the present application provides a display panel comprising:
the display device comprises a substrate, a first display area, a second display area and a third display area, wherein the substrate comprises a display area and a GOA area adjacent to the display area;
the array layer is arranged on the substrate;
The first packaging layer is arranged on one side of the array layer far away from the substrate, and the first packaging layer is positioned on the GOA region;
The second packaging layer is arranged on one side of the array layer away from the substrate, and the second packaging layer is positioned on the display area;
wherein the hydrogen content per unit area of the first encapsulation layer is smaller than the hydrogen content per unit area of the second encapsulation layer.
In the display panel provided by the application, the first packaging layer is an inorganic material with zero hydrogen content.
In the display panel provided by the application, the material of the first packaging layer is silicon oxygen compound, and the material of the second packaging layer is silicon nitrogen compound or silicon nitrogen oxide compound.
In the display panel provided by the application, the first packaging layer is an inorganic material with a hydrogen content of non-zero.
The display panel provided by the application further comprises a hydrogen barrier layer;
the hydrogen barrier layer is arranged between the array layer and the first packaging layer and corresponds to the GOA region.
In the display panel provided by the application, the hydrogen barrier layer is at least one of a non-conductor material and a metal material with zero hydrogen content.
In the display panel provided by the application, the array layer at least comprises a first thin film transistor and a second thin film transistor, wherein the first thin film transistor is arranged on the GOA region, the second thin film transistor is arranged on the display region, the first thin film transistor corresponds to the first packaging layer, and the second thin film transistor corresponds to the second packaging layer.
The display panel provided by the application further comprises a light-emitting device layer;
The light-emitting device layer is arranged on the display area and is arranged on one side of the array layer, which is far away from the substrate.
The display panel provided by the application further comprises a protective layer;
The protective layer is arranged on one side of the first packaging layer and one side of the second packaging layer, which are far away from the substrate, and the protective layer is made of high polymer.
In a second aspect, the present application provides a method for manufacturing a display panel, including the steps of:
providing a substrate, wherein the substrate comprises a display area and a GOA area adjacent to the display area;
preparing an array layer on a substrate;
Sequentially preparing a first packaging layer positioned in a GOA region and a second packaging layer positioned in a display region on one side of the array layer away from the substrate;
wherein the hydrogen content per unit area of the material used for the first encapsulation layer is smaller than the hydrogen content per unit area of the material used for the second encapsulation layer.
In the method for manufacturing a display panel provided by the application, before the step of sequentially manufacturing the first encapsulation layer located in the GOA area and the second encapsulation layer located in the display area, the method further comprises:
and preparing a hydrogen barrier layer positioned in the GOA region on the side of the array layer away from the substrate.
In the method for manufacturing a display panel provided by the application, after the steps of sequentially manufacturing the first packaging layer located in the GOA area and the second packaging layer located in the display area, the method further comprises:
And preparing a protective layer on one side of the first packaging layer and the second packaging layer, which is far away from the substrate.
According to the display panel and the preparation method thereof, the first packaging layer positioned in the GOA area and the second packaging layer positioned in the display area are respectively arranged on the side, away from the substrate, of the array layer, so that the interior of the display panel is isolated from the outside, the interior of the display panel is prevented from being corroded by water, oxygen and the like, the service life of the display panel is prolonged, and moreover, as the hydrogen content per unit area of the first packaging layer is smaller than that of the second packaging layer, compared with the second packaging layer of the display area, the hydrogen diffusion phenomenon generated by the first packaging layer of the GOA area due to the high-temperature state or the aging problem can be effectively reduced.
Drawings
Fig. 1 is a schematic diagram of a first structure of a display panel according to an embodiment of the present application;
fig. 2 is a schematic diagram of a second structure of a display panel according to an embodiment of the application;
fig. 3 is a schematic diagram of a third structure of a display panel according to an embodiment of the application;
Fig. 4 is a schematic diagram of a fourth structure of a display panel according to an embodiment of the application.
Fig. 5 is a schematic flow chart of a first process for manufacturing a display panel according to an embodiment of the present application;
Fig. 6 is a schematic diagram of a second flow chart of a method for manufacturing a display panel according to an embodiment of the application;
fig. 7 is a schematic flow chart of a third method for manufacturing a display panel according to an embodiment of the application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to fall within the scope of the application.
Furthermore, the following description of various inventive embodiments is provided with reference to the accompanying drawings, which illustrate specific inventive embodiments in which the invention may be practiced. Directional terms, such as "upper", "lower", "front", "rear", "side", etc., in the present invention are merely directions referring to the attached drawings, and thus, directional terms are used for better, more clear explanation and understanding of the present invention, rather than indicating or implying that the apparatus or element being referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. When some element is referred to as being "on" another element, it can be directly on the other element or intervening elements may be present.
In some embodiments, referring to fig. 1, fig. 1 is a schematic diagram of a first structure of a display panel according to an embodiment of the application. As shown in fig. 1, the display panel 100 includes a substrate 10, an array layer 20, a first encapsulation layer 30 and a second encapsulation layer 40.
The substrate 10 includes a display area 101 and a GOA area 102 adjacent to the display area 101. Wherein the array layer 20 is disposed on the substrate 10. The first encapsulation layer 30 is disposed on a side of the array layer 20 away from the substrate 10, and the first encapsulation layer 30 is disposed on the GOA region 102. The second encapsulation layer 40 is disposed on a side of the array layer 20 away from the substrate 10, and the second encapsulation layer is disposed on the display area 101. And, the hydrogen content per unit area of the first encapsulation layer 30 is smaller than that of the second encapsulation layer 40.
In this embodiment, the first encapsulation layer 30 located in the GOA region 102 and the second encapsulation layer 40 located in the display region 101 are respectively disposed on the side of the array layer 20 away from the substrate 10 to isolate the interior of the display panel 100 from the external environment, so as to avoid erosion of substances such as water and oxygen from the external environment to the interior of the display panel 100, thereby prolonging the service life of the display panel 100. On the other hand, since the hydrogen content per unit area of the first encapsulation layer 30 is smaller than that of the second encapsulation layer 40, the hydrogen diffusion phenomenon of the first encapsulation layer 30 of the GOA region 101 due to the high temperature state or the aging problem can be effectively reduced compared to the hydrogen diffusion phenomenon of the second encapsulation layer 40 of the display region 101 due to the high temperature state or the aging problem.
In some embodiments, please continue to refer to fig. 1. The first encapsulation layer 30 is an inorganic material with zero hydrogen content. In some embodiments, the first encapsulation layer 30 may be selected from at least one of a silicon oxide compound, a boron oxide compound, and a metal oxide. The second encapsulation layer 40 may be selected from silicon nitride or silicon oxynitride. In some specific embodiments, the first encapsulation layer 30 may be at least one metal oxide selected from aluminum oxide, titanium oxide, and chromium oxide.
In some embodiments, referring to fig. 1, the first encapsulation layer 30 is an inorganic material with a non-zero hydrogen content.
In some embodiments, the first encapsulation layer 30 is a silicon oxynitride and the second encapsulation layer 40 is a silicon oxynitride, wherein the hydrogen content per unit area of the first encapsulation layer 30 is smaller than the hydrogen content per unit area of the second encapsulation layer 40. In the present embodiment, the hydrogen content per unit area of the first encapsulation layer 30 and the hydrogen content per unit area of the second encapsulation layer 40 are controlled by controlling the hydrogen-containing gas amount during the preparation of the oxynitride.
In some embodiments, referring to fig. 2, fig. 2 is a schematic diagram of a second structure of a display panel according to an embodiment of the application. The display panel provided in this embodiment is different from the display panel provided in the foregoing embodiment in that a hydrogen barrier layer is further included in this embodiment. As shown in fig. 2, the display panel 100 includes a substrate 10, an array layer 20, a first encapsulation layer 30, a second encapsulation layer 40, and a hydrogen barrier layer 50.
The substrate 10 includes a display area 101 and a GOA area 102 adjacent to the display area. The array layer 20 is disposed on the substrate 10. The first encapsulation layer 30 is disposed on a side of the array layer 20 away from the substrate 10, and the first encapsulation layer 30 is disposed on the GOA region 102. The second encapsulation layer 40 is disposed on a side of the array layer 20 away from the substrate 10, and the second encapsulation layer is disposed on the display area 101. The hydrogen blocking layer 50 is disposed between the array layer 20 and the first encapsulation layer 30, and the hydrogen blocking layer 50 is disposed corresponding to the GOA region 102.
It should be noted that the front projection of the hydrogen blocking layer 50 in the GOA region 102 may coincide with the front projection of the first encapsulation layer 30 in the GOA region 102, and the front projection of the hydrogen blocking layer 50 in the GOA region 102 may also cover the front projection of the first encapsulation layer 30 in the GOA region 102. It will be appreciated that where the first encapsulation layer 30 contains hydrogen, the hydrogen barrier layer 50 blocks diffusion of hydrogen in the first encapsulation layer 30 to the array layer 20 of the GOA regions 102.
In some embodiments, please continue to refer to fig. 2. The hydrogen barrier layer 50 is at least one of a non-conductive material having a hydrogen content of zero and a metallic material. In some specific embodiments, the hydrogen barrier layer 50 may be selected from at least one of non-conductive materials such as aluminum oxide, titanium oxide, chromium oxide, and the like. In some specific embodiments, the hydrogen barrier layer may be selected from at least one of metallic materials such as metallic silver, metallic magnesium, metallic copper, and metallic aluminum.
In some embodiments, please refer to fig. 3, which is a third structural diagram of a display panel according to an embodiment of the present application. The display panel provided in this embodiment is different from the display panel provided in the foregoing embodiment in that a protective layer is further included in this embodiment. As shown in fig. 3, the display panel 100 includes a substrate 10, an array layer 20, a first encapsulation layer 30, a second encapsulation layer 40, and a passivation layer 60.
The substrate 10 includes a display area 101 and a GOA area 102 adjacent to the display area. The array layer 20 is disposed on the substrate 10. The first encapsulation layer 30 is disposed on a side of the array layer 20 away from the substrate 10, and the first encapsulation layer 30 is disposed on the GOA region 102. The second encapsulation layer 40 is disposed on a side of the array layer 20 away from the substrate 10, and the second encapsulation layer is disposed on the display area 101. The protection layer 60 is disposed on a side of the first encapsulation layer 30 and the second encapsulation layer 40 away from the substrate 10, and the material of the protection layer 60 is a polymer.
It can be understood that, in the third structural schematic diagram of the display panel shown in fig. 3, a hydrogen barrier layer may be further included, where the hydrogen barrier layer is disposed between the array layer 20 and the first encapsulation layer 30, and the hydrogen barrier layer is disposed corresponding to the GOA region 102.
In this embodiment, the protective layer 60 made of high polymer material is disposed on the side of the first package layer 30 and the second package layer 40 away from the substrate 10 to cover the defects on the surfaces of the first package layer 30 and the second package layer 40, so as to eliminate the difference in height between the layers caused by the respective disposition of the first package layer 30 and the second package layer 40, and to provide a planarized surface for the subsequent disposition of other functional layers on the side of the first package layer 30 and the second package layer 40 away from the substrate 10, thereby reducing the surface stress of the first package layer 30 and the second package layer 40. In addition, the high polymer has good blocking effect on water and oxygen, and can isolate the inside of the display panel 100 from the outside, so that the inside of the display panel 100 is prevented from being corroded.
In some specific embodiments, the high molecular polymer may be selected from at least one of polymethyl methacrylate and epoxy resin.
In some embodiments, referring to fig. 4, fig. 4 is a schematic diagram of a fourth structure of a display panel according to an embodiment of the application. As shown in fig. 4, the display panel 100 includes a substrate 10, an array layer 20, a first encapsulation layer 30 and a second encapsulation layer 40.
The substrate 10 includes a display area 101 and a GOA area 102 adjacent to the display area. The substrate 10 may be a rigid substrate or a flexible substrate, and the substrate 10 may be a glass substrate, a polyimide substrate, or a polyethylene terephthalate substrate. The substrate 10 may be a transparent substrate, a translucent substrate, or an opaque substrate.
The array layer 20 is disposed on the substrate 10. Specifically, the array layer 20 has a layered structure including an active layer 201, a gate insulating layer 202, a gate metal layer 203, a source/drain metal 204, and the like, which are sequentially disposed in a direction away from the substrate 10. As shown in fig. 4, the array layer 20 further includes a first interlayer insulating layer 205, a second interlayer insulating layer 206, and a passivation layer 207. The first interlayer insulating layer 205 and the second interlayer insulating layer 206 function as insulation in the array layer 20. The array layer 20 includes at least a first thin film transistor and a second thin film transistor. The first thin film transistor is disposed on the GOA region 102, that is, the active layer 201, the gate insulating layer 202, the gate metal layer 203 and the source drain metal 204 disposed in the GOA region 102 shown in fig. 4 constitute the first thin film transistor. The second thin film transistor is disposed on the display region 101, that is, the active layer 201, the gate insulating layer 202, the gate metal layer 203, and the source/drain metal 204 disposed in the display region 101 shown in fig. 4 constitute the second thin film transistor.
The first encapsulation layer 30 is disposed on a side of the array layer 20 away from the substrate 10, and the first encapsulation layer 30 is disposed on the GOA region 102. The second encapsulation layer 40 is disposed on a side of the array layer away from the substrate 10, and the second encapsulation layer 40 is disposed on the display area 101. The hydrogen content per unit area of the first encapsulation layer 30 is smaller than the hydrogen content per unit area of the second encapsulation layer 40. The material of the first encapsulation layer 30 is a silicon oxide compound, and the material of the second encapsulation layer 40 is an oxynitride compound. The first thin film transistor corresponds to the first encapsulation layer 30, and the second thin film transistor corresponds to the second encapsulation layer 40.
It is understood that the first thin film transistor corresponds to the first encapsulation layer 30, and the front projection of the first encapsulation layer 30 in the GOA area 102 may coincide with the front projection of the first thin film transistor in the GOA area 102, or the front projection of the first encapsulation layer 30 in the GOA area 102 may cover the front projection of the first thin film transistor in the GOA area 102. Similarly, the second tft corresponds to the second encapsulation layer 40, and the front projection of the second encapsulation layer 40 in the display area 101 may cover the front projection of the second tft in the display area, or the front projection of the second encapsulation layer 40 in the display area 101 coincides with the front projection of the second tft in the display area 101.
It should be understood that the illustration of fig. 4 showing only the first thin film transistor in GOA region 102 and showing the second thin film transistor in display region 101 should not constitute any limitation of the present application. Fig. 4 illustrates that the purpose of the first thin film transistor is to cover the front projection of the first thin film transistor by the front projection of the first encapsulation layer 30, which indicates that the first encapsulation layer 30 can block the erosion of the array layer 20 in the GOA region 102 by external water and oxygen, and can effectively reduce the negative bias of the first thin film transistor in the GOA region 102 caused by the hydrogen diffusion of the first encapsulation layer 30, so as to further avoid the GOA circuit failure. Fig. 4 shows that the second tft is designed to cover the second tft by the second encapsulation layer 40 being projected, which means that the second encapsulation layer 40 can block the corrosion of the array layer 20 in the display area 101 by external water and oxygen.
In some embodiments, please continue to refer to fig. 4. The display panel 100 further includes a light emitting device layer 70. The light emitting device layer 70 is located on the display area 101, and the light emitting device layer 70 is disposed on a side of the array layer 20 away from the substrate, and on a side of the second encapsulation layer 40 close to the array layer 20. I.e., the light emitting device layer 70 is disposed between the array layer 20 and the second encapsulation layer 40.
The light-emitting device layer 70 has a layered structure such as an anode layer 701, a light-emitting layer 702, and a cathode layer 703, which are provided in a direction away from the substrate 10. The anode layer 701 is disposed on a side of the array layer 20 remote from the substrate 10. The light emitting layer 702 is provided on a side of the anode layer 701 remote from the substrate 10. The cathode layer 703 is disposed on a side of the light-emitting layer 702 away from the substrate 10. The cathode layer 703 may use a transparent electrode material so as not to block light emitted from the light emitting layer 702. Specifically, the cathode layer 703 may be made of an indium zinc oxide material having conductivity. In addition, the light emitting device layer 70 further includes a planarization layer 704 and a third interlayer insulating layer 705, where the planarization layer 704 may include an organic layer such as benzocyclobutene or acrylic, and the planarization layer 704 has a planarization function.
It should be appreciated that the light emitting device layer 70 has an anode layer 701 and a cathode layer 703 orthographic projection that can cover the second thin film transistor orthographic projection of the display region 101, and the second encapsulation layer 40 orthographic projection can cover the anode layer 701 and the cathode layer 703 orthographic projection in the light emitting device layer 70. The second thin film transistor in the display region 101 has the anode layer 701 and the cathode layer 703 shielded, and the display region 101 is less affected by the hydrogen diffusion phenomenon of the second encapsulation layer 40 than the GOA region 102. Therefore, the first encapsulation layer 30 may be made of a silicon oxide material, and the silicon oxide material may not introduce hydrogen-containing gas during the preparation process, so that the hydrogen content of the first encapsulation layer 30 is zero. Since the display region 101 requires an inorganic material having better sealability than the GOA region 102 and the silicon nitride material has good sealability, the second encapsulation layer 40 may be made of the silicon nitride material. However, the silicon nitride material generally introduces a large amount of hydrogen-containing gas during the manufacturing process, so that the silicon nitride material is not suitable for the first encapsulation layer 30.
With continued reference to fig. 4, in some embodiments, the display panel 100 further includes a hydrogen barrier layer 50. The hydrogen blocking layer 50 is disposed between the array layer 20 and the first encapsulation layer 30, and the hydrogen blocking layer 50 is disposed corresponding to the GOA region 102. It will be appreciated that where the first encapsulation layer 30 contains hydrogen, the hydrogen barrier layer 50 blocks diffusion of hydrogen in the first encapsulation layer 30 to the array layer 20 of the GOA regions 102. The hydrogen barrier layer 50 is at least one of a non-conductive material having a hydrogen content of zero and a metallic material.
With continued reference to fig. 4, in some embodiments, the display panel 100 further includes a protective layer 60. The protection layer 60 is disposed on a side of the first encapsulation layer 30 and the second encapsulation layer 40 away from the substrate 10, and the material of the protection layer 60 is a polymer, and the protection layer 60 can be at least one selected from polymethyl methacrylate and epoxy resin. The protective layer 60 made of high polymer material is arranged on the side, away from the substrate 10, of the first packaging layer 30 and the second packaging layer 40 so as to cover the defects on the surfaces of the first packaging layer 30 and the second packaging layer 40, so that the difference in film height generated by arranging the first packaging layer 30 and the second packaging layer 40 respectively is eliminated, the flattened surface is provided for arranging other functional film layers on the side, away from the substrate 10, of the first packaging layer 30 and the second packaging layer 40, and the surface stress of the first packaging layer 30 and the second packaging layer 40 is reduced. In addition, the high polymer has good blocking effect on water and oxygen, and can isolate the inside of the display panel 100 from the outside, so that the inside of the display panel 100 is prevented from being corroded.
The application also provides a preparation method of the display panel. In some embodiments, referring to fig. 5, fig. 5 is a schematic flow chart of a first process for manufacturing a display panel according to an embodiment of the application. As shown in fig. 5, the method comprises the following steps:
Step S101, providing a substrate, wherein the substrate comprises a display area and a GOA area adjacent to the display area.
The substrate can be made of glass, polyimide, polyethylene terephthalate and other materials. The substrate may be transparent, translucent or opaque. The substrate in this embodiment may be a flexible substrate, and may be formed of a polymer having a relatively small thickness.
And S102, preparing an array layer on the substrate. The array layer in this embodiment includes at least two thin film transistors and a pixel circuit formed of the thin film transistors. The array layer is used to form a light emitting structure in the control light emitting device layer.
Wherein the step of preparing the array layer may comprise depositing an active layer on the substrate. A gate insulating layer is deposited on a side of the active layer remote from the substrate. And depositing a gate metal layer on one side of the gate insulating layer away from the substrate, and then patterning the gate metal layer. And depositing an interlayer insulating layer on one side of the gate metal layer away from the substrate, so that the active layer, the gate insulating layer and the gate metal layer are covered by the interlayer insulating layer. And carrying out opening treatment on the interlayer insulating layer to define a source metal region and a drain metal region. And depositing source metal and drain metal in the source metal region and the drain metal region respectively. A passivation layer may also be deposited on the source metal layer and the drain metal layer on a side away from the substrate. The passivation layer can be made of inorganic materials such as silicon oxygen compound or silicon nitrogen compound.
In addition, a buffer layer may be prepared on the substrate before step S102 and after step S101, the buffer layer may be provided by a stack of layers of inorganic or organic materials to prevent diffusion of water, oxygen or other impurities through the substrate, and the buffer layer may provide a flat surface on the substrate.
And step 103, sequentially preparing a first packaging layer positioned in the GOA region and a second packaging layer positioned in the display region on one side of the array layer away from the substrate, wherein the hydrogen content of a material adopted by the first packaging layer in unit area is smaller than that of a material adopted by the second packaging layer.
The step of sequentially preparing the first packaging layer positioned in the GOA region and the second packaging layer positioned in the display region can be concretely implemented by depositing the first packaging layer on one side of the array layer far away from the substrate through atomic deposition and other processes, so that the first packaging layer covers the GOA region and at least part of the display region. And removing the first encapsulation layer positioned in the display area through an etching process. And then, depositing a second packaging layer on one side of the array layer corresponding to the display area, which is far away from the substrate, through atomic deposition and other processes. The step of sequentially preparing the first packaging layer positioned in the GOA region and the second packaging layer positioned in the display region can also specifically be that the first packaging layer positioned in the GOA region and the second packaging layer positioned in the display region are sequentially prepared on one side of the array layer far away from the substrate through a mask process.
It should be noted that, since the light emitting layer located in the display area is very sensitive to water and oxygen from the outside, the second encapsulation layer needs to have a material with better sealability than the first encapsulation layer. Thus, the material of the second encapsulation layer may be at least one of silicon nitride or silicon oxynitride. However, in the preparation of the silicon nitride compound or the silicon oxynitride compound, a hydrogen-containing gas is required to be introduced, and the encapsulation layer formed of the silicon nitride compound or the silicon oxynitride compound has a certain hydrogen content, so that the encapsulation layer formed of the silicon nitride compound or the silicon oxynitride compound has a hydrogen diffusion phenomenon due to a high temperature state or an aging problem. The thin film transistors in the array layer are negatively biased due to the hydrogen diffusion phenomenon, and the GOA circuit is disabled due to the serious hydrogen diffusion phenomenon. Therefore, silicon nitride or silicon oxynitride is not suitable for a material for preparing the first encapsulation layer. The first packaging material can be at least one of inorganic materials with zero hydrogen content or inorganic materials with smaller hydrogen content, such as at least one of inorganic materials of silicon oxygen compound or metal oxide. In addition, since the preparation of the silicon nitride compound or the silicon oxynitride compound requires the introduction of the hydrogen-containing gas, the second encapsulation layer located in the display area is first prepared on the side of the array layer far away from the substrate, and then the first encapsulation layer located in the GOA area is prepared, and then the array layer located in the GOA area may be affected by the hydrogen-containing gas due to the absence of the shielding of the cathode layer and the anode layer. Thus, the first encapsulation layer may be prepared first and then the second encapsulation layer may be prepared.
In some embodiments, before step S103 and after step S102, the light emitting device layer is further prepared on a side of the array layer corresponding to the display area away from the substrate. The step of preparing the light emitting device layer may include preparing an anode layer on a side of the array layer corresponding to the display region, which is far away from the substrate, and performing patterning treatment on the anode layer. And preparing a light-emitting layer on one side of the anode layer away from the substrate, wherein the light-emitting layer can be formed by an inkjet printing process. And preparing a cathode layer on one side of the light-emitting layer far away from the substrate, wherein the cathode layer can be formed on the light-emitting layer through an evaporation process. In some embodiments, the cathode layer is a full-face structure covering the light emitting layer and the array layer of the display region.
In this embodiment, the first packaging layer located in the GOA area and the second packaging layer located in the display area 101 are prepared separately, so that the interior of the display panel is isolated from the external environment, and corrosion of substances such as water and oxygen from the external environment to the interior of the display panel is avoided, thereby prolonging the service life of the display panel. On the other hand, since the hydrogen content per unit area of the first encapsulation layer is smaller than that of the second encapsulation layer, the hydrogen diffusion phenomenon of the first encapsulation layer in the GOA region due to the high temperature state or the aging problem can be effectively reduced compared with the hydrogen diffusion phenomenon of the second encapsulation layer in the display region due to the high temperature state or the aging problem.
In some embodiments, referring to fig. 6, fig. 6 is a second flowchart of a method for manufacturing a display panel according to an embodiment of the application. As shown in fig. 6, the method comprises the following steps:
Step 201, providing a substrate, wherein the substrate comprises a display area and a GOA area adjacent to the display area;
step S202, preparing an array layer on the substrate;
Step 203, preparing a hydrogen barrier layer positioned in the GOA region on one side of the array layer away from the substrate;
And S204, sequentially preparing a first packaging layer positioned in the GOA region and a second packaging layer positioned in the display region on one side of the array layer away from the substrate, wherein the hydrogen content of a material adopted by the first packaging layer in unit area is smaller than that of a material adopted by the second packaging layer.
The manufacturing method of the display substrate provided in this embodiment is different from the previous embodiment in that, before the steps of sequentially manufacturing the first encapsulation layer located in the GOA area and the second encapsulation layer located in the display area, a hydrogen barrier layer is manufactured on a side, away from the substrate, of the array layer corresponding to the GOA area. The hydrogen barrier layer may be deposited by atomic deposition or the like such that the hydrogen barrier layer covers the GOA region and the orthographic projection of the hydrogen barrier layer in the GOA region may cover the orthographic projection of the first encapsulation layer in the GOA region. The material of the hydrogen blocking layer may be at least one of a non-conductive material or a metallic material having zero hydrogen content, such as at least one of aluminum oxide, titanium oxide, chromium oxide, metallic silver, metallic magnesium, metallic copper, and metallic aluminum.
In some embodiments, referring to fig. 7, fig. 7 is a schematic flow chart of a third method for manufacturing a display panel according to an embodiment of the application. As shown in fig. 7, the method comprises the following steps:
step 301, providing a substrate, wherein the substrate comprises a display area and a GOA area adjacent to the display area;
step S302, preparing an array layer on the substrate;
Step S303, preparing a hydrogen barrier layer in the GOA region on a side of the array layer away from the substrate, wherein in some embodiments, step S303 may be omitted;
step S304, sequentially preparing a first packaging layer positioned in the GOA region and a second packaging layer positioned in the display region on one side of the array layer far away from the substrate, wherein the hydrogen content of a material adopted by the first packaging layer in unit area is smaller than that of a material adopted by the second packaging layer;
in step S305, a protective layer is prepared on a side of the first encapsulation layer and the second encapsulation layer away from the substrate.
The manufacturing method of the display substrate provided in this embodiment is different from the foregoing embodiment in that after the steps of sequentially manufacturing the first encapsulation layer located in the GOA area and the second encapsulation layer located in the display area, a protection layer is manufactured on a side, away from the substrate, of the first encapsulation layer and the second encapsulation layer. The protective layer is made of high polymer material and can be prepared by an ink-jet printing process. The high polymer material may be at least one selected from epoxy resins and polymethyl methacrylates. It should be noted that, the protective layer made of the high polymer material can cover the surface defects of the first packaging layer and the second packaging layer on the side far away from the substrate, eliminate the height difference of the film layers generated by respectively arranging the first packaging layer and the second packaging layer, provide a flattened surface for arranging other functional film layers on the side far away from the substrate of the first packaging layer and the second packaging layer, and reduce the surface stress of the first packaging layer and the second packaging layer. And moreover, the high-molecular polymer material has a good barrier effect on water and oxygen, and can isolate the inside of the display panel from the outside, so that the inside of the display panel is prevented from being corroded.
The foregoing is only illustrative of the present application and is not to be construed as limiting the scope of the application, and all equivalent structures or equivalent flow modifications which may be made by the teachings of the present application and the accompanying drawings or which may be directly or indirectly employed in other related art are within the scope of the application.
Claims (9)
1. A display panel, comprising:
the display device comprises a substrate, a first display area, a second display area and a third display area, wherein the substrate comprises a display area and a GOA area adjacent to the display area;
the array layer is arranged on the substrate;
The first packaging layer is arranged on one side of the array layer far away from the substrate, and the first packaging layer is positioned on the GOA region;
The second packaging layer is arranged on one side of the array layer away from the substrate, and the second packaging layer is positioned on the display area;
a hydrogen blocking layer, which is arranged between the array layer and the first packaging layer and is only positioned on the GOA region;
The first packaging layer positioned in the GOA area and the second packaging layer positioned in the display area are sequentially prepared on one side of the array layer far away from the substrate;
the hydrogen content per unit area of the first encapsulation layer is smaller than the hydrogen content per unit area of the second encapsulation layer.
2. The display panel of claim 1, wherein the first encapsulation layer is an inorganic material having zero hydrogen content.
3. The display panel according to claim 2, wherein the material of the first encapsulation layer is a silicon oxygen compound, and the material of the second encapsulation layer is a silicon nitrogen compound or a silicon nitrogen oxygen compound.
4. The display panel of claim 1, wherein the first encapsulation layer is an inorganic material having a hydrogen content other than zero.
5. The display panel according to claim 4, wherein the hydrogen blocking layer is at least one of a non-conductive material and a metal material having a hydrogen content of zero.
6. The display panel of claim 1, wherein the array layer comprises at least a first thin film transistor and a second thin film transistor, the first thin film transistor is disposed on the GOA region, the second thin film transistor is disposed on the display region, the first thin film transistor corresponds to the first encapsulation layer, and the second thin film transistor corresponds to the second encapsulation layer.
7. The display panel according to any one of claims 1 to 6, further comprising a light emitting device layer;
The light-emitting device layer is positioned on the display area, and the light-emitting device layer is arranged on one side of the array layer, which is far away from the substrate.
8. A method for manufacturing a display panel, comprising the steps of:
providing a substrate, wherein the substrate comprises a display area and a GOA area adjacent to the display area;
preparing an array layer on the substrate;
Sequentially preparing a first packaging layer positioned in the GOA region and a second packaging layer positioned in the display region on one side of the array layer away from the substrate, wherein,
The hydrogen content per unit area of the material used for the first packaging layer is smaller than the hydrogen content per unit area of the material used for the second packaging layer.
9. The method for manufacturing a display panel according to claim 8, wherein the step of sequentially manufacturing the first encapsulation layer located in the GOA region and the second encapsulation layer located in the display region further comprises:
and preparing a hydrogen blocking layer positioned in the GOA region on one side of the array layer away from the substrate.
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| KR20210086342A (en) * | 2019-12-31 | 2021-07-08 | 엘지디스플레이 주식회사 | Display apparatus having an oxide semiconductor pattern |
| KR102757476B1 (en) * | 2019-12-31 | 2025-01-17 | 엘지디스플레이 주식회사 | Display apparatus having an oxide semiconductor pattern |
| CN111863837B (en) * | 2020-07-13 | 2023-04-18 | 武汉华星光电半导体显示技术有限公司 | Array substrate and display panel |
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