CN114808036B - A method for recycling high-purity tin-indium alloy from ITO target waste - Google Patents
A method for recycling high-purity tin-indium alloy from ITO target waste Download PDFInfo
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Abstract
Description
技术领域Technical field
本发明属于ITO粉生产领域,具体涉及一种从ITO靶材废料回收高纯锡铟合金的方法。The invention belongs to the field of ITO powder production, and specifically relates to a method for recovering high-purity tin-indium alloy from ITO target waste.
背景技术Background technique
随着电子信息技术的迅速发展,液晶显示屏被广泛应用,作为生产氧化铟锡薄膜的原材料ITO靶材的消耗量也在显著增大。生产ITO薄膜过程中对ITO靶材的利用率较低,约70%的ITO靶材成为废料需要回收。ITO靶材的成份一般为质量比9:1的氧化铟与氧化锡,废靶中的金属铟含量约为74.40%,金属锡的含量约为7.88%。铟和锡金属都属贵重金属,铟在地壳中的含量为1×10-5%,且较为分散,至今为止没有发现过富矿。虽然确定有5种独立矿种如硫铟铜矿(CuInS2)、硫铟铁矿(FeInS4)、水铟矿[In(OH)3]等,但这些矿物在自然界也很少见,铟主要呈类质同象存在于铁闪锌矿(铟的含量为0.0001%~0.1%)、赤铁矿、方铅矿以及其他多金属硫化物矿石中。此外锡矿石、黑钨矿、普通角闪石中也含有铟。因此铟被归类为稀有金属。全球预估铟储量仅5万吨,其中可开采的占50%。锡作为世界上的稀有金属之一,在地壳中的含量为0.004%,全球锡储量约480万吨,基础储量约为1100万吨。因此,实现废靶中金属铟锡的绿色高效回收,是ITO行业发展的重大技术需求,同时也是对保护和合理利用金属资源有着极其重要的意义。现行的从ITO废靶中回收铟锡,我们查到有专利文献CN200780039782.8公开了一种通过将ITO废料进行电解来回收铟-锡合金的方法。该方法使用硫酸、盐酸、碱作为电解液,并在其中添加硫酸铵、氯化钠、硫酸钠等作为电解质,ITO作为阳极、碳等耐腐蚀电极作为阴极母板,电解温度控制在20~50℃,电流密度优选根据原料的种类适当调节的条件进行电解。该方法电解时间长,并且铟锡合金的回收率最高仅为75%。With the rapid development of electronic information technology, liquid crystal displays have been widely used, and the consumption of ITO targets, which are raw materials for producing indium tin oxide films, has also increased significantly. The utilization rate of ITO targets in the production of ITO films is low, and about 70% of ITO targets become waste and need to be recycled. The composition of ITO targets is generally indium oxide and tin oxide with a mass ratio of 9:1. The content of metallic indium in the waste target is about 74.40%, and the content of metallic tin is about 7.88%. Both indium and tin metals are precious metals. The content of indium in the earth's crust is 1×10-5%, and it is relatively dispersed. No rich ore has been found so far. Although there are 5 independent mineral species identified, such as copper sulfide indium (CuInS 2 ), sulfide indium iron ore (FeInS 4 ), hydroindium ore [In(OH) 3 ], etc., these minerals are also rare in nature. Indium It mainly exists in isomorphous iron sphalerite (indium content is 0.0001% to 0.1%), hematite, galena and other polymetallic sulfide ores. In addition, tin ore, wolframite, and common hornblende also contain indium. Indium is therefore classified as a rare metal. The global estimated indium reserves are only 50,000 tons, of which 50% can be mined. Tin is one of the rare metals in the world, with a content of 0.004% in the earth's crust. The global tin reserves are about 4.8 million tons, and the basic reserves are about 11 million tons. Therefore, realizing green and efficient recycling of metal indium tin in waste targets is a major technical need for the development of the ITO industry. It is also of extremely important significance for the protection and rational utilization of metal resources. For the current recovery of indium tin from ITO waste targets, we found patent document CN200780039782.8 which discloses a method of recovering indium-tin alloy by electrolysis of ITO waste. This method uses sulfuric acid, hydrochloric acid, and alkali as the electrolyte, and adds ammonium sulfate, sodium chloride, sodium sulfate, etc. as the electrolyte, ITO as the anode, carbon and other corrosion-resistant electrodes as the cathode motherboard, and the electrolysis temperature is controlled at 20 to 50 ℃, the current density is preferably adjusted appropriately according to the type of raw material, and electrolysis is performed under conditions. This method takes a long time to electrolyze, and the highest recovery rate of indium tin alloy is only 75%.
发明内容Contents of the invention
本发明的目的是解决上述技术问题,提供一种可提高铟锡合金回收率、且产品纯度高的从ITO靶材废料回收高纯锡铟合金的方法。The purpose of the present invention is to solve the above technical problems and provide a method for recovering high-purity tin-indium alloy from ITO target waste that can increase the recovery rate of indium-tin alloy and has high product purity.
为实现上述的目的,本发明的技术方案为:In order to achieve the above objects, the technical solution of the present invention is:
一种从ITO靶材废料回收高纯锡铟合金的方法,是以ITO靶材废料作为阳极板,其步骤包括:A method of recycling high-purity tin-indium alloy from ITO target waste is to use ITO target waste as an anode plate. The steps include:
(1)溶解:将所述阳极板和钛阴极板置于第一电解槽中,以硫酸溶液为电解液,进行第一次微电流电解,得到铟锡溶液;(1) Dissolution: Place the anode plate and titanium cathode plate in the first electrolytic tank, use sulfuric acid solution as the electrolyte, and perform the first microcurrent electrolysis to obtain an indium tin solution;
(2)一次提纯:将所述阳极板和钛阴极板置于第二电解槽中,以所述铟锡溶液作为电解液,进行第二次微电流电解;(2) Primary purification: Place the anode plate and titanium cathode plate in the second electrolytic tank, use the indium tin solution as the electrolyte, and perform the second microcurrent electrolysis;
(3)二次提纯:将第二电解槽底部的铟锡合金沉淀物滤去水分,放入到悬浮设备中真空高温熔炼,得到高纯铟锡合金。(3) Secondary purification: Filter out the water from the indium-tin alloy precipitate at the bottom of the second electrolytic tank, put it into a suspension equipment for vacuum and high-temperature melting, and obtain a high-purity indium-tin alloy.
作为进一步的技术方案,以上所述阳极板和阴极板的长度之比为(1.4-1.6):1,宽度之比为(1.4-1.6):1。As a further technical solution, the length ratio of the above-mentioned anode plate and cathode plate is (1.4-1.6):1, and the ratio of the width is (1.4-1.6):1.
作为进一步的技术方案,以上所述阳极板的长宽厚依次为19.80cm~20.20cm、13.80cm~14.20cm、0.90cm~1.10cm;所述阴极板的长宽厚依次为12.38cm~14.42cm、8.63cm~10.15cm、0.20cm~0.30cm。As a further technical solution, the length, width and thickness of the above-mentioned anode plate are 19.80cm~20.20cm, 13.80cm~14.20cm, 0.90cm~1.10cm; the length, width and thickness of the cathode plate are 12.38cm~14.42cm, 8.63 cm~10.15cm, 0.20cm~0.30cm.
作为进一步的技术方案,以上所述第一次微电流电解的电流密度为40A/m2~50A/m2,温度为20~60℃,电解时间为120~180min。As a further technical solution, the current density of the first microcurrent electrolysis mentioned above is 40A/m 2 to 50A/m 2 , the temperature is 20 to 60°C, and the electrolysis time is 120 to 180 minutes.
作为进一步的技术方案,以上所述第二次微电流电解的电流密度为51A/m2~70A/m2,温度为20~60℃,电解时间为100~150min。As a further technical solution, the current density of the second microcurrent electrolysis mentioned above is 51A/m 2 to 70A/m 2 , the temperature is 20 to 60°C, and the electrolysis time is 100 to 150 minutes.
作为进一步的技术方案,以上所述到悬浮设备中真空高温熔炼,是将所述第二电解槽底部沉淀物置于石墨坩埚中,然后放入预先通入高纯Ar的悬浮设备中,抽真空,加热升温至熔融状态,再提高温度2500~3000℃,保温1小时,保温结束后,再通入高纯Ar保护的条件下,冷却物料至室温。As a further technical solution, for the above-mentioned vacuum high-temperature smelting in the suspension equipment, the precipitate at the bottom of the second electrolytic tank is placed in a graphite crucible, and then placed in the suspension equipment that has been pre-passed with high-purity Ar, and vacuumed. Heat to a molten state, then increase the temperature to 2500-3000°C, and keep it for 1 hour. After the insulation is completed, cool the material to room temperature under the protection of high-purity Ar.
作为进一步的技术方案,以上所述真空度≥0.08Mpa。As a further technical solution, the above-mentioned vacuum degree is ≥0.08Mpa.
作为进一步的技术方案,以上所述ITO靶材废料采用丙酮进行超声波清洗后粉碎,再压制为阳极板。As a further technical solution, the above-mentioned ITO target waste is ultrasonically cleaned with acetone, crushed, and then pressed into anode plates.
作为进一步的技术方案,以上所述干燥的温度为100~110℃,时间为30~60min。As a further technical solution, the above-mentioned drying temperature is 100-110°C and the time is 30-60 minutes.
作为进一步的技术方案,以上所述硫酸溶液的浓度为800g/l。As a further technical solution, the concentration of the above sulfuric acid solution is 800g/l.
与现有技术相比,本发明的有益效果为:Compared with the prior art, the beneficial effects of the present invention are:
1、本发明的大尺寸阳极板和小尺寸阴极板,加上微小电流,形成微弱的非均匀电场,在此非均匀电场下,ITO靶材废料中的铟锡首先迅速溶解到电解液中,形成纯净的铟锡溶液,再以铟锡溶液作为电解液进行二次微电流电解,由于电场不均匀,铟锡合金不会漂移至阴极沉积,而是迅速下沉到电解槽的底部,避免阴阳极短路;在此方法下,本发明的铟锡合金回收率提高至80%以上。1. The large-sized anode plate and small-sized cathode plate of the present invention, coupled with a small current, form a weak non-uniform electric field. Under this non-uniform electric field, the indium tin in the ITO target waste material first quickly dissolves into the electrolyte, A pure indium tin solution is formed, and then the indium tin solution is used as the electrolyte for secondary microcurrent electrolysis. Due to the uneven electric field, the indium tin alloy will not drift to the cathode for deposition, but will quickly sink to the bottom of the electrolytic tank to avoid negative and positive effects. Extreme short circuit; under this method, the recovery rate of the indium tin alloy of the present invention is increased to more than 80%.
2、本发明采用悬浮提纯,其原理是提高铟锡粗合金的熔炼温度,使氧、氮、氢与铟锡粗合金的饱和蒸汽压与温度关系曲线差距增大,从而使铟锡粗合金与氧、氮、氢分离,得到N含量≤0.001%、H含量≤0.001%、O含量≤0.001%高纯锡铟合金。2. The present invention uses suspension purification. The principle is to increase the melting temperature of the indium tin crude alloy to increase the gap between the saturated vapor pressure and temperature relationship curves of oxygen, nitrogen, hydrogen and the indium tin crude alloy, thereby making the indium tin crude alloy and the indium tin crude alloy. Oxygen, nitrogen and hydrogen are separated to obtain high-purity tin-indium alloy with N content ≤0.001%, H content ≤0.001% and O content ≤0.001%.
具体实施方式Detailed ways
下面结合实施例对本发明作进一步详细的描述,但本发明的实施方式并不局限于实施例表示的范围。The present invention will be described in further detail below with reference to the examples, but the implementation of the present invention is not limited to the scope represented by the examples.
本实施例选用ITO靶材废料来源于广西某铟锡靶材厂,其成分检测如表1:The ITO target waste selected in this example comes from an indium tin target factory in Guangxi, and its composition is tested as shown in Table 1:
表1Table 1
将ITO靶材废料用丙酮进行清洗,擦净丙酮,再用超声波在纯水介质中清洗30min,放入到颚式破碎机破碎成小于 5 毫米的料块,然后压制成为阳极板,每块阳极板限定为2kg。Clean the ITO target waste with acetone, wipe off the acetone, clean it with ultrasonic waves in pure water medium for 30 minutes, put it into the jaw crusher and crush it into pieces less than 5 mm, and then press it into an anode plate. Each anode Boards are limited to 2kg.
实施例1、实施例2和实施例3是采用的阳极板和阴极板的尺寸是:阳极板的长宽厚依次为19.80cm、13.80cm、0.90cm;阴极板的长宽厚依次为12.38cm、8.63cm、0.20cm。The dimensions of the anode plate and the cathode plate used in Example 1, Example 2 and Example 3 are: the length, width and thickness of the anode plate are 19.80cm, 13.80cm, 0.90cm; the length, width and thickness of the cathode plate are 12.38cm, 8.63cm cm, 0.20cm.
实施例4和实施例5是采用的阳极板和阴极板的尺寸是:阳极板的长宽厚依次为20.20cm、14.20cm、1.10cm;阴极板的长宽厚依次为14.42cm、10.15cm、0.30cm。The dimensions of the anode plate and cathode plate used in Examples 4 and 5 are: the length, width and thickness of the anode plate are 20.20cm, 14.20cm, and 1.10cm in order; the length, width and thickness of the cathode plate are 14.42cm, 10.15cm, and 0.30cm in order. .
实施例1:Example 1:
(1)溶解:将阳极板和钛阴极板置于第一电解槽中,以800g/l硫酸为电解液,进行第一次微电流电解,第一次微电流电解的电流密度为40A/m2,温度为20℃,电解时间为120min,取第一电解槽内的铟锡溶液;(1) Dissolution: Place the anode plate and titanium cathode plate in the first electrolytic tank, use 800g/l sulfuric acid as the electrolyte, and perform the first microcurrent electrolysis. The current density of the first microcurrent electrolysis is 40A/m. 2. The temperature is 20°C and the electrolysis time is 120 minutes. Take the indium tin solution in the first electrolytic tank;
(2)一次提纯:将所述阳极板和钛阴极板置于第二电解槽中,以所述铟锡溶液作为电解液,进行第二次微电流电解,第二次微电流电解的电流密度为50A/m2,温度为20,电解时间为100min;(2) Primary purification: Place the anode plate and titanium cathode plate in the second electrolytic tank, use the indium tin solution as the electrolyte, and perform the second microcurrent electrolysis. The current density of the second microcurrent electrolysis is 50A/m 2 , the temperature is 20, and the electrolysis time is 100min;
(3)二次提纯:将第二电解槽底部的铟锡合金沉淀物滤去水分置于石墨坩埚中,然后放入预先通入半小时的高纯Ar悬浮设备中,再进行抽真空,真空度为-0.08MPa,加热升温至沉淀物熔融,再提高温度2500℃,保温1小时,保温结束后,再通入高纯Ar保护的条件下,冷却物料至室温。悬浮设备中真空高温熔炼,得到1.35kg的高纯铟锡合金,回收率为81.82%。(3) Secondary purification: Filter out the water from the indium-tin alloy precipitate at the bottom of the second electrolytic tank and place it in a graphite crucible, then put it into the high-purity Ar suspension equipment that has been passed in for half an hour in advance, and then vacuum. The temperature is -0.08MPa, heat until the precipitate melts, then increase the temperature to 2500°C, and keep it for 1 hour. After the insulation is completed, add high-purity Ar protection and cool the material to room temperature. Vacuum high-temperature smelting in the suspension equipment produced 1.35kg of high-purity indium-tin alloy with a recovery rate of 81.82%.
实施例2:Example 2:
(1)溶解:将阳极板和钛阴极板置于第一电解槽中,以800g/l硫酸为电解液,进行第一次微电流电解,第一次微电流电解的电流密度为45A/m2,温度为40℃,电解时间为160min,取第一电解槽内的铟锡溶液;(1) Dissolution: Place the anode plate and titanium cathode plate in the first electrolytic tank, use 800g/l sulfuric acid as the electrolyte, and perform the first microcurrent electrolysis. The current density of the first microcurrent electrolysis is 45A/m. 2. The temperature is 40°C and the electrolysis time is 160 minutes. Take the indium tin solution in the first electrolytic tank;
(2)一次提纯:将所述阳极板和钛阴极板置于第二电解槽中,以所述铟锡溶液作为电解液,进行第二次微电流电解,第二次微电流电解的电流密度为60A/m2,温度为40℃,电解时间为130min;(2) Primary purification: Place the anode plate and titanium cathode plate in the second electrolytic tank, use the indium tin solution as the electrolyte, and perform the second microcurrent electrolysis. The current density of the second microcurrent electrolysis is 60A/m 2 , the temperature is 40°C, and the electrolysis time is 130min;
(3)二次提纯:将第二电解槽底部的铟锡合金沉淀物滤去水分置于石墨坩埚中,然后放入预先通入半小时的高纯Ar悬浮设备中,再进行抽真空,真空度为-0.08MPa,加热升温至沉淀物熔融,再提高温度2500℃,保温1小时,保温结束后,再通入高纯Ar保护的条件下,冷却物料至室温。悬浮设备中真空高温熔炼,得到1.37kg的高纯铟锡合金,回收率为83.03%。(3) Secondary purification: Filter out the water from the indium-tin alloy precipitate at the bottom of the second electrolytic tank and place it in a graphite crucible, then put it into the high-purity Ar suspension equipment that has been passed in for half an hour in advance, and then vacuum. The temperature is -0.08MPa, heat until the precipitate melts, then increase the temperature to 2500°C, and keep it for 1 hour. After the insulation is completed, add high-purity Ar protection and cool the material to room temperature. Vacuum high-temperature smelting in the suspension equipment produced 1.37kg of high-purity indium-tin alloy with a recovery rate of 83.03%.
实施例3:Example 3:
(1)溶解:将阳极板和钛阴极板置于第一电解槽中,以800g/l硫酸为电解液,进行第一次微电流电解,第一次微电流电解的电流密度为50A/m2,温度为60℃,电解时间为180min,取第一电解槽内的铟锡溶液;(1) Dissolution: Place the anode plate and titanium cathode plate in the first electrolytic tank, use 800g/l sulfuric acid as the electrolyte, and perform the first microcurrent electrolysis. The current density of the first microcurrent electrolysis is 50A/m. 2. The temperature is 60°C and the electrolysis time is 180 minutes. Take the indium tin solution in the first electrolytic tank;
(2)一次提纯:将所述阳极板和钛阴极板置于第二电解槽中,以所述铟锡溶液作为电解液,进行第二次微电流电解,第二次微电流电解的电流密度为70A/m2,温度为60℃,电解时间为150min;(2) Primary purification: Place the anode plate and titanium cathode plate in the second electrolytic tank, use the indium tin solution as the electrolyte, and perform the second microcurrent electrolysis. The current density of the second microcurrent electrolysis is 70A/m 2 , the temperature is 60°C, and the electrolysis time is 150min;
(3)二次提纯:将第二电解槽底部的铟锡合金沉淀物滤去水分置于石墨坩埚中,然后放入预先通入半小时的高纯Ar悬浮设备中,再进行抽真空,真空度为-0.08MPa,加热升温至沉淀物熔融,再提高温度2500℃,保温1小时,保温结束后,再通入高纯Ar保护的条件下,冷却物料至室温。悬浮设备中真空高温熔炼,得到1.38kg的高纯铟锡合金,回收率为83.63%。(3) Secondary purification: Filter out the water from the indium-tin alloy precipitate at the bottom of the second electrolytic tank and place it in a graphite crucible, then put it into the high-purity Ar suspension equipment that has been passed in for half an hour in advance, and then vacuum. The temperature is -0.08MPa, heat until the precipitate melts, then increase the temperature to 2500°C, and keep it for 1 hour. After the insulation is completed, add high-purity Ar protection and cool the material to room temperature. Vacuum high-temperature melting in the suspension equipment produced 1.38kg of high-purity indium-tin alloy with a recovery rate of 83.63%.
实施例4:Example 4:
(1)溶解:将阳极板和钛阴极板置于第一电解槽中,以800g/l硫酸为电解液,进行第一次微电流电解,第一次微电流电解的电流密度为42A/m2,温度为30℃,电解时间为130min,取第一电解槽内的铟锡溶液;(1) Dissolution: Place the anode plate and titanium cathode plate in the first electrolytic tank, use 800g/l sulfuric acid as the electrolyte, and perform the first microcurrent electrolysis. The current density of the first microcurrent electrolysis is 42A/m. 2. The temperature is 30°C and the electrolysis time is 130 minutes. Take the indium tin solution in the first electrolytic tank;
(2)一次提纯:将所述阳极板和钛阴极板置于第二电解槽中,以所述铟锡溶液作为电解液,进行第二次微电流电解,第二次微电流电解的电流密度为55A/m2,温度为30,电解时间为100min;(2) Primary purification: Place the anode plate and titanium cathode plate in the second electrolytic tank, use the indium tin solution as the electrolyte, and perform the second microcurrent electrolysis. The current density of the second microcurrent electrolysis is 55A/m 2 , the temperature is 30, and the electrolysis time is 100min;
(3)二次提纯:将第二电解槽底部的铟锡合金沉淀物滤去水分置于石墨坩埚中,然后放入预先通入半小时的高纯Ar悬浮设备中,再进行抽真空,真空度为-0.08MPa,加热升温至沉淀物熔融,再提高温度2500℃,保温1小时,保温结束后,再通入高纯Ar保护的条件下,冷却物料至室温。悬浮设备中真空高温熔炼,得到1.36kg的高纯铟锡合金,回收率为82.71%。(3) Secondary purification: Filter out the water from the indium-tin alloy precipitate at the bottom of the second electrolytic tank and place it in a graphite crucible, then put it into the high-purity Ar suspension equipment that has been passed in for half an hour in advance, and then vacuum. The temperature is -0.08MPa, heat until the precipitate melts, then increase the temperature to 2500°C, and keep it for 1 hour. After the insulation is completed, add high-purity Ar protection and cool the material to room temperature. Vacuum high-temperature smelting in the suspension equipment produced 1.36kg of high-purity indium-tin alloy with a recovery rate of 82.71%.
实施例5:Example 5:
(1)溶解:将阳极板和钛阴极板置于第一电解槽中,以800g/l硫酸为电解液,进行第一次微电流电解,第一次微电流电解的电流密度为48A/m2,温度为40℃,电解时间为170min,取第一电解槽内的铟锡溶液;(1) Dissolution: Place the anode plate and titanium cathode plate in the first electrolytic tank, use 800g/l sulfuric acid as the electrolyte, and perform the first microcurrent electrolysis. The current density of the first microcurrent electrolysis is 48A/m. 2. The temperature is 40℃, the electrolysis time is 170min, take the indium tin solution in the first electrolytic tank;
(2)一次提纯:将所述阳极板和钛阴极板置于第二电解槽中,以所述铟锡溶液作为电解液,进行第二次微电流电解,第二次微电流电解的电流密度为65A/m2,温度为50℃,电解时间为130min;(2) Primary purification: Place the anode plate and titanium cathode plate in the second electrolytic tank, use the indium tin solution as the electrolyte, and perform the second microcurrent electrolysis. The current density of the second microcurrent electrolysis is 65A/m 2 , the temperature is 50℃, and the electrolysis time is 130min;
(3)二次提纯:将第二电解槽底部的铟锡合金沉淀物滤去水分置于石墨坩埚中,然后放入预先通入半小时的高纯Ar悬浮设备中,再进行抽真空,真空度为-0.08MPa,加热升温至沉淀物熔融,再提高温度2500℃,保温1小时,保温结束后,再通入高纯Ar保护的条件下,冷却物料至室温。悬浮设备中真空高温熔炼,得到1.39kg的高纯铟锡合金,回收率为84.54%。(3) Secondary purification: Filter out the water from the indium-tin alloy precipitate at the bottom of the second electrolytic tank and place it in a graphite crucible, then put it into the high-purity Ar suspension equipment that has been passed in for half an hour in advance, and then vacuum. The temperature is -0.08MPa, heat until the precipitate melts, then increase the temperature to 2500°C, and keep it for 1 hour. After the insulation is completed, add high-purity Ar protection and cool the material to room temperature. Vacuum high-temperature smelting in the suspension equipment produced 1.39kg of high-purity indium-tin alloy with a recovery rate of 84.54%.
实施例1-5的高纯铟锡合金检测结果如表2所示:The test results of the high-purity indium tin alloy of Examples 1-5 are shown in Table 2:
表2Table 2
由表2可以看出,实施例1-5制备的高纯铟锡合金,其N、O、H含量均低于0.001%,其它杂质含量均≤0.0020%。It can be seen from Table 2 that the N, O, and H contents of the high-purity indium tin alloy prepared in Examples 1-5 are all less than 0.001%, and the other impurity contents are ≤0.0020%.
接着本发明采用实施例1的步骤(1)和(2)进行回收率对比实验。Next, the present invention uses steps (1) and (2) of Example 1 to conduct a recovery rate comparison experiment.
(一)采用相同大小的阴阳极板(不含侧面)进行微电流电解,即阳极板的长宽厚依次为19.80cm、13.80cm、0.90cm,重量2kg;阴极板的长宽厚依次为19.80cm、13.80cm、0.25cm。微电流电解参数同实施例1,最终在第二电解槽得到1.22kg 的铟锡合金沉淀物。;(1) Use cathode and anode plates of the same size (excluding sides) for microcurrent electrolysis, that is, the length, width and thickness of the anode plate are 19.80cm, 13.80cm, 0.90cm, and the weight is 2kg; the length, width and thickness of the cathode plate are 19.80cm, 13.80cm, 0.25cm. The microcurrent electrolysis parameters are the same as those in Example 1, and finally 1.22kg of indium-tin alloy precipitate is obtained in the second electrolytic tank. ;
(二)采用强电流电解,电流密度为300A/m2,温度为20℃,电解时间为120min,阴阳极板的大小同实施例1,最终在第二电解槽得到1.25kg 的铟锡合金沉淀物。(2) High current electrolysis is used, the current density is 300A/m 2 , the temperature is 20°C, the electrolysis time is 120 minutes, the sizes of the cathode and anode plates are the same as in Example 1, and finally 1.25kg of indium tin alloy precipitation is obtained in the second electrolytic tank things.
由回收率对比实验证明,在本发明微弱的非均匀电场下,可提高铟锡合金的回收率。The recovery rate comparison experiment proves that the recovery rate of the indium tin alloy can be improved under the weak non-uniform electric field of the present invention.
然后,本发明采用进行悬浮提纯对比实验。此对比实验(三)中,步骤(1)和步骤(2)同实施例1,步骤(3)的提纯方法采用本领域常用的真空蒸馏法,所得结果如表3所示。Then, the present invention uses suspension purification comparative experiments. In this comparative experiment (3), steps (1) and (2) are the same as in Example 1. The purification method of step (3) adopts the vacuum distillation method commonly used in this field. The results are shown in Table 3.
表3table 3
由表3看到,对比实验(三)不采用悬浮提纯得到铟锡合金其N、O、H和其它杂质的含量明显高于实施1。As can be seen from Table 3, the content of N, O, H and other impurities in the indium tin alloy obtained in Comparative Experiment (3) without suspension purification is significantly higher than that in Experiment 1.
上述实施例,仅为对本发明的目的、技术方案和有益效果进一步详细说明的具体个例,本发明并非限定于此。凡在本发明公开的范围之内所做的任何修改、等同替换、改进等,均包含在本发明的保护范围之内。The above embodiments are only specific examples to further describe the purpose, technical solutions and beneficial effects of the present invention in detail, and the present invention is not limited thereto. Any modifications, equivalent substitutions, improvements, etc. made within the scope of the disclosure of the present invention are included in the protection scope of the present invention.
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